WO2016088868A1 - ガラス板 - Google Patents
ガラス板 Download PDFInfo
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- WO2016088868A1 WO2016088868A1 PCT/JP2015/084114 JP2015084114W WO2016088868A1 WO 2016088868 A1 WO2016088868 A1 WO 2016088868A1 JP 2015084114 W JP2015084114 W JP 2015084114W WO 2016088868 A1 WO2016088868 A1 WO 2016088868A1
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- Prior art keywords
- glass plate
- processed substrate
- alignment portion
- chamfered
- semiconductor package
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laminated Bodies (AREA)
- Liquid Crystal (AREA)
Abstract
Description
2、6、10、38 位置合わせ部
3、7、11、40 外形部
4、8 ノッチ形状の深部
21、22 表面
23 端面
24、25 面取り面
31、47 積層体
32、33、34 位置決め部材
35、44 加工基板
37 加工基板の位置合わせ部
39 加工基板の外形部
40 支持部材
41、45 接着層
42 半導体チップ
43 封止材
48 配線
49 半田バンプ
Claims (17)
- 外形が外形部と位置合わせ部で構成されるガラス板であって、
位置合わせ部の表面と端面とが交差する端縁領域の全部又は一部が面取りされていることを特徴とすることを特徴とするガラス板。 - 位置合わせ部の表面方向の面取り幅が50~900μmであることを特徴とする請求項1に記載のガラス板。
- 位置合わせ部の板厚方向の面取り幅が板厚の5~80%であることを特徴とする請求項1又は2に記載のガラス板。
- 位置合わせ部の表面と端面とが交差する端縁領域に面取り面を有すると共に、面取り面の平均表面粗さRaが0.20μm以下であることを特徴とする請求項1~3の何れかに記載のガラス板。
- 位置合わせ部の表面と端面とが交差する端縁領域に面取り面を有すると共に、面取り面と端面が連続的に丸みを帯びた状態で連結していることを特徴とする請求項1~4の何れかに記載のガラス板。
- 位置合わせ部の形状がノッチ形状であることを特徴とする請求項1~5の何れかに記載のガラス板。
- 外形部の全部又は一部が面取りされており、外形部の表面方向の面取り幅が50~900μmである請求項1~6の何れかに記載のガラス板。
- 外形がウエハ形状であることを特徴とする請求項1~7の何れかに記載のガラス板。
- 全体板厚偏差が2.0μm未満であることを特徴とする請求項1~8の何れかに記載のガラス板。
- オーバーフローダウンドロー法により成形されてなることを特徴とする請求項1~9の何れかに記載のガラス板。
- 半導体パッケージの製造工程で加工基板の支持に用いることを特徴とする請求項1~10の何れかに記載のガラス板。
- 少なくとも加工基板と加工基板を支持するためのガラス板とを備える積層体であって、ガラス板が請求項1~11の何れかに記載のガラス板であることを特徴とする積層体。
- 少なくとも加工基板と加工基板を支持するためのガラス板とを備える積層体を用意する工程と、
加工基板に対して、加工処理を行う工程と、を有すると共に、ガラス板が請求項1~12の何れかに記載のガラス板であることを特徴とする半導体パッケージの製造方法。 - 加工処理が、加工基板の一方の表面に配線する工程を含むことを特徴とする請求項13に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する工程を含むことを特徴とする請求項13又は14に記載の半導体パッケージの製造方法。
- 請求項13~15の何れかに記載の半導体パッケージの製造方法により作製されたことを特徴とする半導体パッケージ。
- 半導体パッケージを備える電子機器であって、
半導体パッケージが、請求項16に記載の半導体パッケージであることを特徴とする電子機器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177007831A KR102436788B1 (ko) | 2014-12-04 | 2015-12-04 | 유리판 |
CN201580051113.7A CN107074637A (zh) | 2014-12-04 | 2015-12-04 | 玻璃板 |
JP2016562692A JP6611079B2 (ja) | 2014-12-04 | 2015-12-04 | ガラス板 |
US15/532,590 US10442729B2 (en) | 2014-12-04 | 2015-12-04 | Glass sheet |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-245596 | 2014-12-04 | ||
JP2014245596 | 2014-12-04 |
Publications (1)
Publication Number | Publication Date |
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WO2016088868A1 true WO2016088868A1 (ja) | 2016-06-09 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2015/084114 WO2016088868A1 (ja) | 2014-12-04 | 2015-12-04 | ガラス板 |
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US (1) | US10442729B2 (ja) |
JP (1) | JP6611079B2 (ja) |
KR (1) | KR102436788B1 (ja) |
CN (1) | CN107074637A (ja) |
TW (1) | TWI704032B (ja) |
WO (1) | WO2016088868A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017154933A (ja) * | 2016-03-02 | 2017-09-07 | 日本電気硝子株式会社 | 板ガラスおよびその製造方法 |
WO2018207794A1 (ja) * | 2017-05-12 | 2018-11-15 | Agc株式会社 | ガラス基板、およびガラス基板の製造方法 |
JP2019047106A (ja) * | 2017-08-31 | 2019-03-22 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層基板 |
EP3888846A1 (en) | 2020-04-01 | 2021-10-06 | Novel Crystal Technology, Inc. | Semiconductor substrate and method for manufacturing same |
WO2022030392A1 (ja) * | 2020-08-06 | 2022-02-10 | Agc株式会社 | 積層体の製造方法、積層体および半導体パッケージの製造方法 |
JP2022050613A (ja) * | 2017-10-27 | 2022-03-30 | ショット アクチエンゲゼルシャフト | 平面ガラスを製造する装置および方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016047210A1 (ja) | 2014-09-25 | 2016-03-31 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
WO2018160452A1 (en) * | 2017-02-28 | 2018-09-07 | Corning Incorporated | Glass article with reduced thickness variation, method for making and apparatus therefor |
US11584673B2 (en) * | 2017-07-31 | 2023-02-21 | Corning Incorporated | Laminate article having a non-glass core and glass envelope and methods thereof |
US20200407266A1 (en) * | 2018-02-20 | 2020-12-31 | Nippon Electric Glass Co., Ltd. | Glass |
KR102600873B1 (ko) * | 2018-05-15 | 2023-11-09 | 쇼오트 글라스 테크놀로지스 (쑤저우) 코퍼레이션 리미티드. | 특수한 챔퍼 형상과 고강도를 갖는 초박형 유리 |
US11664050B2 (en) * | 2021-10-05 | 2023-05-30 | Western Digital Technologies, Inc. | Tuned edge profile of a disk substrate for use in magnetic recording media |
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JP2009016771A (ja) * | 2007-06-08 | 2009-01-22 | Hoya Candeo Optronics株式会社 | ウエハ支持ガラス |
JP2012111661A (ja) * | 2010-11-24 | 2012-06-14 | Nippon Electric Glass Co Ltd | ガラス基板およびその製造方法 |
JP2014114183A (ja) * | 2012-12-10 | 2014-06-26 | Asahi Glass Co Ltd | 積層板の加工方法、加工された積層板 |
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JP2022050613A (ja) * | 2017-10-27 | 2022-03-30 | ショット アクチエンゲゼルシャフト | 平面ガラスを製造する装置および方法 |
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TW201628779A (zh) | 2016-08-16 |
JPWO2016088868A1 (ja) | 2017-09-14 |
JP6611079B2 (ja) | 2019-11-27 |
TWI704032B (zh) | 2020-09-11 |
KR102436788B1 (ko) | 2022-08-26 |
KR20170093779A (ko) | 2017-08-16 |
US20170334773A1 (en) | 2017-11-23 |
CN107074637A (zh) | 2017-08-18 |
US10442729B2 (en) | 2019-10-15 |
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