JPWO2019021672A1 - 支持ガラス基板及びこれを用いた積層基板 - Google Patents
支持ガラス基板及びこれを用いた積層基板 Download PDFInfo
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- JPWO2019021672A1 JPWO2019021672A1 JP2019532431A JP2019532431A JPWO2019021672A1 JP WO2019021672 A1 JPWO2019021672 A1 JP WO2019021672A1 JP 2019532431 A JP2019532431 A JP 2019532431A JP 2019532431 A JP2019532431 A JP 2019532431A JP WO2019021672 A1 JPWO2019021672 A1 JP WO2019021672A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 269
- 239000011521 glass Substances 0.000 title claims abstract description 138
- 239000004065 semiconductor Substances 0.000 claims description 50
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 description 26
- 239000012790 adhesive layer Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 21
- 230000007423 decrease Effects 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 9
- 238000004031 devitrification Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910018068 Li 2 O Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- YPHMISFOHDHNIV-FSZOTQKASA-N cycloheximide Chemical compound C1[C@@H](C)C[C@H](C)C(=O)[C@@H]1[C@H](O)CC1CC(=O)NC(=O)C1 YPHMISFOHDHNIV-FSZOTQKASA-N 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910018921 CoO 3 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000006103 coloring component Substances 0.000 description 2
- 239000006066 glass batch Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000009774 resonance method Methods 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000006991 platinum ball pulling-up method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007372 rollout process Methods 0.000 description 1
- -1 silicate compound Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
10、26、31 支持ガラス基板
11、24、34 加工基板
12、32 剥離層
13、21、25、33 接着層
20 支持部材
22、35 半導体チップ
23 封止材
28 配線
29 半田バンプ
36 研磨装置
37 紫外光
Claims (9)
- 30〜380℃の温度範囲における平均線熱膨張係数が30×10−7/℃以上であり、且つ55×10−7/℃以下であり、ヤング率が80GPa以上であることを特徴とする支持ガラス基板。
- 全体板厚偏差(TTV)が2.0μm未満であることを特徴とする請求項1に記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 50〜66%、Al2O3 7〜34%、B2O3 0〜8%、MgO 0〜22%、CaO 1〜15%、Y2O3+La2O3+ZrO2 0〜20%を含有することを特徴とする請求項1又は2に記載の支持ガラス基板。
- 半導体パッケージの製造工程で、半導体チップが樹脂にモールドされた加工基板の支持に用いることを特徴とする請求項1〜3の何れかに記載の支持ガラス基板。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層基板であって、支持ガラス基板が請求項1〜4の何れかに記載の支持ガラス基板であることを特徴とする積層基板。
- 加工基板が、半導体チップが樹脂にモールドされた加工基板であることを特徴とする請求項5に記載の積層基板。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層基板を用意する工程と、
加工基板に対して、加工処理を行う工程と、を有すると共に、支持ガラス基板が請求項1〜4の何れかに記載の支持ガラス基板であることを特徴とする半導体パッケージの製造方法。 - 加工処理が、加工基板の一方の表面に配線する工程を含むことを特徴とする請求項7に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する工程を含むことを特徴とする請求項7又は8に記載の半導体パッケージの製造方法。
Priority Applications (1)
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JP2023044528A JP7538483B2 (ja) | 2017-07-26 | 2023-03-20 | 支持ガラス基板及びこれを用いた積層基板 |
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JP2017144217 | 2017-07-26 | ||
JP2017144217 | 2017-07-26 | ||
JP2017238390 | 2017-12-13 | ||
JP2017238390 | 2017-12-13 | ||
PCT/JP2018/022828 WO2019021672A1 (ja) | 2017-07-26 | 2018-06-15 | 支持ガラス基板及びこれを用いた積層基板 |
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JP2023044528A Division JP7538483B2 (ja) | 2017-07-26 | 2023-03-20 | 支持ガラス基板及びこれを用いた積層基板 |
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JPWO2019021672A1 true JPWO2019021672A1 (ja) | 2020-05-28 |
JP7265224B2 JP7265224B2 (ja) | 2023-04-26 |
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JP2019532431A Active JP7265224B2 (ja) | 2017-07-26 | 2018-06-15 | 支持ガラス基板及びこれを用いた積層基板 |
JP2023044528A Active JP7538483B2 (ja) | 2017-07-26 | 2023-03-20 | 支持ガラス基板及びこれを用いた積層基板 |
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Country Status (4)
Country | Link |
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JP (2) | JP7265224B2 (ja) |
CN (3) | CN116462405A (ja) |
TW (2) | TW202311186A (ja) |
WO (1) | WO2019021672A1 (ja) |
Families Citing this family (1)
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WO2021241312A1 (ja) * | 2020-05-28 | 2021-12-02 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層基板 |
Citations (3)
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JP2004531443A (ja) * | 2001-03-24 | 2004-10-14 | カール−ツアイス−スチフツング | アルカリ金属不含のアルミノホウケイ酸塩および使用 |
JP2016169141A (ja) * | 2015-03-10 | 2016-09-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
WO2016190303A1 (ja) * | 2015-05-28 | 2016-12-01 | 旭硝子株式会社 | ガラス基板、および積層基板 |
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CN1207086A (zh) * | 1996-09-04 | 1999-02-03 | 保谷株式会社 | 信息记录介质基片用玻璃及玻璃基片 |
JP2001348247A (ja) | 2000-05-31 | 2001-12-18 | Asahi Glass Co Ltd | 無アルカリガラス |
JP4165703B2 (ja) * | 2003-09-01 | 2008-10-15 | Hoya株式会社 | 精密プレス成形用プリフォームの製造方法および光学素子の製造方法 |
JP4537092B2 (ja) | 2004-03-01 | 2010-09-01 | パナソニック株式会社 | ガラス組成物及び磁気ヘッド |
US8187715B2 (en) | 2008-05-13 | 2012-05-29 | Corning Incorporated | Rare-earth-containing glass material and substrate and device comprising such substrate |
JP5292028B2 (ja) | 2008-09-10 | 2013-09-18 | 株式会社オハラ | ガラス |
EP2639205B1 (en) * | 2010-11-08 | 2019-03-06 | Nippon Electric Glass Co., Ltd. | Alkali-free glass |
JP5831838B2 (ja) * | 2011-03-08 | 2015-12-09 | 日本電気硝子株式会社 | 無アルカリガラス |
KR102436789B1 (ko) * | 2014-04-07 | 2022-08-26 | 니폰 덴키 가라스 가부시키가이샤 | 적층체, 반도체 패키지 제조 방법, 반도체 패키지 및 전자기기 |
JP2016028000A (ja) * | 2014-07-10 | 2016-02-25 | 日本電気硝子株式会社 | 強化ガラス及びその製造方法 |
WO2016035674A1 (ja) * | 2014-09-03 | 2016-03-10 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP6802966B2 (ja) * | 2014-12-17 | 2020-12-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
CN107709258B (zh) * | 2015-07-03 | 2022-04-01 | Agc株式会社 | 载体基板、层叠体、电子器件的制造方法 |
KR102584795B1 (ko) | 2015-12-16 | 2023-10-05 | 니폰 덴키 가라스 가부시키가이샤 | 지지 결정화 유리 기판 및 이것을 사용한 적층체 |
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2018
- 2018-06-15 CN CN202310383158.0A patent/CN116462405A/zh active Pending
- 2018-06-15 CN CN201880043070.1A patent/CN110831908A/zh active Pending
- 2018-06-15 CN CN202310383937.0A patent/CN116462406A/zh active Pending
- 2018-06-15 WO PCT/JP2018/022828 patent/WO2019021672A1/ja active Application Filing
- 2018-06-15 JP JP2019532431A patent/JP7265224B2/ja active Active
- 2018-06-21 TW TW111143112A patent/TW202311186A/zh unknown
- 2018-06-21 TW TW107121248A patent/TWI787283B/zh active
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2023
- 2023-03-20 JP JP2023044528A patent/JP7538483B2/ja active Active
Patent Citations (3)
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JP2004531443A (ja) * | 2001-03-24 | 2004-10-14 | カール−ツアイス−スチフツング | アルカリ金属不含のアルミノホウケイ酸塩および使用 |
JP2016169141A (ja) * | 2015-03-10 | 2016-09-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
WO2016190303A1 (ja) * | 2015-05-28 | 2016-12-01 | 旭硝子株式会社 | ガラス基板、および積層基板 |
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