WO2016082276A1 - 阵列基板及其制作方法以及液晶显示器 - Google Patents

阵列基板及其制作方法以及液晶显示器 Download PDF

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Publication number
WO2016082276A1
WO2016082276A1 PCT/CN2014/095314 CN2014095314W WO2016082276A1 WO 2016082276 A1 WO2016082276 A1 WO 2016082276A1 CN 2014095314 W CN2014095314 W CN 2014095314W WO 2016082276 A1 WO2016082276 A1 WO 2016082276A1
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Prior art keywords
pixel
lines
pixel electrode
common electrode
electrode
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PCT/CN2014/095314
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English (en)
French (fr)
Inventor
郑华
Original Assignee
深圳市华星光电技术有限公司
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Priority to US14/426,205 priority Critical patent/US20160349586A1/en
Publication of WO2016082276A1 publication Critical patent/WO2016082276A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate, a method for fabricating the same, and a liquid crystal display.
  • FIG. 1 illustrates in detail a five-mask process liquid crystal panel pixel.
  • the thin black line frame is the size of one pixel 100.
  • the pixel 100 includes: a first metal layer 11 and 13 for forming a scan line 11 and a common electrode line 13; and an amorphous silicon layer 14 for forming a TFT (Thin Film Transistor, an active layer of a thin film transistor; a second metal layer 12 for forming a signal line, a source and a drain of the TFT; a via layer 16 for forming a via to turn on the metal of the upper and lower layers; and a pixel electrode layer 15 Used to make the ITO area of the pixel electrode.
  • TFT Thin Film Transistor
  • the pixels are simply repetitively arranged. Therefore, the pixel shown in FIG. 1 can be arrayed into the structure shown in FIG. 2. As shown in FIG. 2, since the common electrode line 13 and the scan line 11 are made of the same layer of metal, and the common electrode line 13 of each row of pixels is inseparable in the array, it can only be passed outside the array. The lines are connected. Due to the aperture ratio, the common electrode lines 13 are generally narrow, and the common electrode lines 13 of different rows cannot be connected by additionally burrowing holes.
  • the technical problem to be solved by the present invention is to provide an array substrate, a manufacturing method thereof and a liquid crystal display, which can form a tight network with a low resistance value for the common electric wire pole, and stably stabilize the potential of the common electrode line, thereby eliminating the pixel charging. Poor display due to quasi-conformity.
  • an array substrate including:
  • a pixel structure is defined for each adjacent two scan lines and two adjacent data lines, and the pixel structure includes:
  • a thin film transistor component electrically connecting the data line and the scan line
  • the first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode form a 2x2 structure electrically connected to the thin film transistor device and are spaced apart by a common electrode line, wherein the first pixel electrode, the second pixel electrode, and the first pixel electrode
  • the common electrode lines of the three-pixel electrode and the fourth pixel electrode are connected together.
  • the pixel structure is center-symmetrical.
  • the common electrode line located in the middle of the pixel structure has a cross shape.
  • the common electrode line is respectively provided with a via hole near both ends of the scan line.
  • the via holes are connected to the common electrode lines of adjacent pixel structures through metal traces.
  • the present invention provides a method for fabricating an array substrate, comprising: defining a pixel structure on each adjacent two scan lines and two adjacent data lines on the substrate, and the pixel structure includes: a thin film transistor a component, electrically connecting the data line and the scan line; the first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode form a 2x2 structure electrically connected to the thin film transistor component and spaced apart by the common electrode line; The common electrode lines of the one pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode are connected together.
  • the pixel structure is center-symmetrical.
  • the common electrode line located in the middle of the pixel structure has a cross shape.
  • the common electrode line is respectively provided with a via hole near the two ends of the scan line, and is connected to the common electrode line of the adjacent pixel structure through the metal trace.
  • the present invention provides a liquid crystal display comprising an array substrate, the array substrate comprising:
  • a pixel structure is defined for each adjacent two scan lines and two adjacent data lines, and the pixel structure includes:
  • a thin film transistor component electrically connecting the data line and the scan line
  • the first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode form a 2x2 structure electrically connected to the thin film transistor device and are spaced apart by a common electrode line, wherein the first pixel electrode, the second pixel electrode, and the first pixel electrode
  • the common electrode lines of the three-pixel electrode and the fourth pixel electrode are connected together.
  • the pixel structure is center-symmetrical.
  • the common electrode line located in the middle of the pixel structure has a cross shape.
  • the common electrode line is respectively provided with a via hole near both ends of the scan line.
  • the via holes are connected to the common electrode lines of adjacent pixel structures through metal traces.
  • the beneficial effects of the present invention are: defining a pixel structure by each adjacent two scan lines and two adjacent data lines, including: a thin film transistor component, electrically connecting data lines and scan lines; and a first pixel electrode a second pixel electrode, a third pixel electrode, and a fourth pixel electrode are formed in a 2x2 structure electrically connected to the thin film transistor device and spaced apart by a common electrode line, wherein the first pixel electrode, the second pixel electrode, and the third pixel electrode.
  • the common electrode lines of the fourth pixel electrode are connected together, so that the common electric wire pole can form a tight network of low resistance values, the potential of the common electrode line is excellently stabilized, and display defects caused by inaccurate pixel charging are eliminated.
  • FIG. 1 is a schematic diagram of a pixel structure in the prior art
  • FIG. 2 is a schematic structural view of an array substrate in the prior art
  • FIG. 3 is a schematic structural view of an array substrate according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram showing the arrangement of pixels of an array substrate according to an embodiment of the present invention.
  • FIG. 5 is a schematic flow chart of a method of fabricating an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • the array substrate includes a substrate (not shown), a plurality of data lines 22, a plurality of scanning lines 21, and a plurality of common electrode lines 23.
  • a plurality of data lines 22 are disposed on the substrate, a plurality of scanning lines 21 intersect the data lines 22, and a plurality of common electrode lines 23 intersect with the data lines 22.
  • a pixel structure 200 is defined for each adjacent two scan lines 21 and two adjacent data lines 22.
  • the pixel structure 200 includes a thin film transistor component 24, a first pixel electrode 200, a second pixel electrode 201, a third pixel electrode 202, and a fourth pixel electrode 203.
  • the thin film transistor component 24 is electrically connected to the data line 22 and the scan line 21; the first pixel electrode 200, the second pixel electrode 201, the third pixel electrode, and the fourth pixel electrode form a 2x2 structure, electrically connected to the thin film transistor component, and through the common electrode line Interspersed.
  • the common electrode lines of the first pixel electrode, the second pixel electrode, the third pixel electrode 202, and the fourth pixel electrode 203 are connected together.
  • the common electrode line 23 located in the middle of the pixel structure 20 has a cross shape with a width of 5-20 ⁇ m, and has sufficient space to make vias 272 to be connected to the common electrode lines of adjacent pixel structures. In Fig. 3, Fig.
  • b is a schematic structural view of the dotted line frame 27 enlarged
  • Fig. c is a schematic enlarged view of the broken line frame 27.
  • the common electrode line 23 is provided with via holes 272, 282 adjacent to both ends of the scanning line 21, respectively.
  • the vias 272, 282 are connected to the common electrode lines of adjacent pixel structures by metal traces 271, 281.
  • the pixel structure 20 is center-symmetrical.
  • each 2 ⁇ 2 adjacent pixels 200, 201, 202, and 203 form a pixel structure 20, and are rearranged by a center-symmetric layout, and a common electrode line between the pixel 200 and the pixel 201.
  • the common electrode line between the pixel 200 and the pixel 202, and the common electrode line between the pixel 201 and the pixel 203 are no longer separated by the scanning line, so that all of them can be connected to form a cross shape as shown in FIG.
  • the width of the common electrode line is also increased, so that a via hole can be respectively formed at the upper and lower ends of the scan line, and the via hole is respectively connected to the common electrode line of the pixel structure adjacent to the upper and lower sides, so that the common electrode line forms a low resistance.
  • the tight network of values greatly reduces the resistance of the common electrode line, and the potential fluctuation of the common electrode line at a single point can be quickly balanced, thereby eliminating display defects caused by inaccurate pixel charging.
  • FIG. 5 is a schematic flow chart of a method of fabricating an array substrate according to an embodiment of the present invention. As shown in FIG. 5, the method for fabricating the array substrate includes:
  • Step S10 Defining a pixel structure on each adjacent two scan lines and two adjacent data lines on the substrate, the pixel structure includes: a thin film transistor component, electrically connecting the data lines and the scan lines.
  • the array substrate includes a substrate, a plurality of data lines, a plurality of scan lines, and a plurality of common electrode lines.
  • a plurality of data lines are disposed on the substrate, a plurality of scan lines intersect the data lines, and a plurality of common electrode lines intersect with the data lines.
  • the pixel structure formed in step S10 is center-symmetrical.
  • the thin film transistor component is located at the intersection of the scan line and the data line, that is, at the four corners of the pixel structure.
  • Step S11 The first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode form a 2x2 structure electrically connected to the thin film transistor device and spaced apart by the common electrode line.
  • the common electrode lines between the two adjacent pixel electrodes are no longer spaced apart by the scanning lines, and adjacent common electrode lines can be connected.
  • Step S12 connecting the common electrode lines of the first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode together.
  • step S12 the common electrode lines between the two adjacent pixel electrodes are connected, so that the common electrode lines located in the middle of the pixel structure have a cross shape, and the width of the common electrode lines also increases.
  • a via hole is respectively disposed at two ends of the common electrode line near the scan line, and is connected to the common electrode line of the adjacent pixel structure through the metal trace, so that the common electrode line forms a tight network with low resistance value, which greatly reduces the common electrode line.
  • the resistance, the single-point common electrode line potential fluctuation can be quickly balanced, and the display failure caused by the pixel charging is not allowed.
  • the embodiment of the invention further provides a liquid crystal display comprising the array substrate as shown in FIG.
  • the present invention defines a pixel structure by each adjacent two scan lines and two adjacent data lines, including: a thin film transistor component, electrically connecting data lines and scan lines; a first pixel electrode, a second pixel electrode, and a third pixel
  • the electrode and the fourth pixel electrode are formed in a 2x2 structure, electrically connected to the thin film transistor component, and are separated by a common electrode line, wherein the common electrode line of the first pixel electrode, the second pixel electrode, the third pixel electrode, and the fourth pixel electrode are connected Together, the common electrode line can form a tight network of low resistance values, which extremely stabilizes the potential of the common electrode line, and eliminates display defects caused by inaccurate pixel charging.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种阵列基板及其制作方法以及液晶显示器，包括：基板；多条数据线（22），配置在基板上；多条扫描线（21），与数据线（22）相交；多条共用电极线（23），相交于数据线（22）；每相邻两条扫描线（21）以及相邻两条数据线（22）定义出一像素结构（20），像素结构（20）包括：薄膜晶体管组件（24），电连接数据线（22）以及扫描线（21）；第一像素电极（200）、第二像素电极（201）、第三像素电极（202）以及第四像素电极（203），形成2x2结构，电连接于薄膜晶体管组件（24），通过共用电极线（23）间隔开，其中第一像素电极（200）、第二像素电极（201）、第三像素电极（202）以及第四像素电极（203）的共用电极线（23）连接在一起。通过上述方式，能够使共用电线极（23）形成低电阻值的紧密网络，极好地稳定了共用电极线（23）的电位，杜绝了像素充电不准而造成的显示不良。

Description

阵列基板及其制作方法以及液晶显示器
【技术领域】
本发明涉及显示技术领域，特别是涉及一种阵列基板及其制作方法以及液晶显示器。
【背景技术】
图1详细示例了一个五道光罩制程的液晶面板像素。其中，细黑线框出了一个像素100的大小。像素100包括：第一金属层11、13用于制作扫描线11、共用电极线13；非晶硅层14用于制作TFT（Thin Film Transistor，薄膜晶体管）的有源层；第二金属层12用于制作信号线、TFT的源极和漏极；过孔层16用于制作过孔使上下层的金属导通；像素电极层15用于制作像素电极ITO区。
在一般面板设计中，像素为简单地重复性排列。因此，可以将图1所示的像素阵列化为图2所示的结构。如图2所示，由于共用电极线13和扫描线11为同层金属制备，而每行像素的共用电极线13在列阵内都是不能相接的，所以只能在阵列外通过专门的走线相接。出于开口率的考虑，共用电极线13一般都很窄，无法通过额外挖过孔来连接不同行的共用电极线13。并且，阵列内的共用电极线13的电容电阻延迟（RC Delay）很大，共用电极线13的电位容易在像素的充电过程被数据线11和像素电极层15拉动，导致像素电极ITO的充电电压不准。
【发明内容】
本发明解决的技术问题是，提供一种阵列基板及其制作方法以及液晶显示器，能够使共用电线极形成低电阻值的紧密网络，极好地稳定了共用电极线的电位，杜绝了像素充电不准而造成的显示不良。
为解决上述技术问题，本发明提供了一种阵列基板，包括：
基板；
多条数据线，配置在基板上；
多条扫描线，与数据线相交；
多条共用电极线，相交于数据线；
每相邻两条扫描线以及相邻两条数据线定义出一像素结构，像素结构包括：
薄膜晶体管组件，电连接数据线以及扫描线；
第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开，其中第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起。
其中，像素结构呈中心对称。
其中，位于像素结构中部的共用电极线呈十字架形状。
其中，共用电极线靠近扫描线的两端分别设置过孔。
其中，过孔通过金属走线与相邻像素结构的共用电极线连接。
为解决上述技术问题，本发明提供了一种阵列基板的制作方法，包括：在基板上将每相邻两条扫描线以及相邻两条数据线定义出一像素结构，像素结构包括：薄膜晶体管组件，电连接数据线以及扫描线；第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开；将第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起。
其中，像素结构呈中心对称。
其中，位于像素结构中部的共用电极线呈十字架形状。
其中，共用电极线靠近扫描线的两端分别设置过孔，通过金属走线与相邻像素结构的共用电极线连接。
为解决上述技术问题，本发明提供了一种液晶显示器，包括阵列基板，阵列基板包括：
基板；
多条数据线，配置在基板上；
多条扫描线，与数据线相交；
多条共用电极线，相交于数据线；
每相邻两条扫描线以及相邻两条数据线定义出一像素结构，像素结构包括：
薄膜晶体管组件，电连接数据线以及扫描线；
第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开，其中第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起。
其中，像素结构呈中心对称。
其中，位于像素结构中部的共用电极线呈十字架形状。
其中，共用电极线靠近扫描线的两端分别设置过孔。
其中，过孔通过金属走线与相邻像素结构的共用电极线连接。
通过上述方案，本发明的有益效果是：通过每相邻两条扫描线以及相邻两条数据线定义出一像素结构，包括：薄膜晶体管组件，电连接数据线以及扫描线；第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开，其中第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起，能够使共用电线极形成低电阻值的紧密网络，极好地稳定了共用电极线的电位，杜绝了像素充电不准而造成的显示不良。
【附图说明】
图1是现有技术中的像素结构示意图；
图2是现有技术中阵列基板的结构示意图；
图3是本发明实施例的阵列基板的结构示意图；
图4是本发明实施例的阵列基板的像素的排列示意图；
图5是本发明实施例的阵列基板的制作方法的流程示意图。
【具体实施方式】
请参阅图3，图3是本发明实施例的阵列基板的结构示意图。如图3中的图a所示，阵列基板包括基板（图未示）、多条数据线22、多条扫描线21以及多条共用电极线23。多条数据线22配置在基板上，多条扫描线21与数据线22相交，多条共用电极线23相交于数据线22。每相邻两条扫描线21以及相邻两条数据线22定义出一像素结构200。像素结构200包括：薄膜晶体管组件24、第一像素电极200、第二像素电极201、第三像素电极202以及第四像素电极203。薄膜晶体管组件24电连接数据线22以及扫描线21；第一像素电极200、第二像素电极201、第三像素电极以及第四像素电极形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开。其中第一像素电极、第二像素电极、第三像素电极202以及第四像素电极203的共用电极线连接在一起。位于像素结构20中部的共用电极线23呈十字架形状，其宽度为5-20μm，有足够的空间制作过孔272以与相邻像素结构的共用电极线连接。图3中，图b为虚线框27放大后的结构示意图，图c为虚线框27放大后的结构示意图。共用电极线23靠近扫描线21的两端分别设置过孔272、282。该过孔272、282通过金属走线271、281与相邻像素结构的共用电极线连接。从图3中的图a可以看出，像素结构20呈中心对称。其形成过程如图4所示，每2×2个相邻的像素200、201、202、203组成一个像素结构20，采用中心对称的布局进行重新排列，像素200与像素201间的共用电极线、像素200与像素202间的共用电极线、以及像素201与像素203间的共用电极线不再被扫描线隔开，因此可以将其全部相接，形成如图3所示的呈十字架形状的共用电极线，其宽度也增加，使得能够在靠近扫描线的上下两端分别制作一过孔，通过该过孔分别与上下相邻的像素结构的共用电极线连接，使共用电极线形成低电阻值的紧密网络，极大地降低了共用电极线的电阻，单点的共用电极线电位波动能迅速地被平衡掉，杜绝了像素充电不准而造成的显示不良。
图5是本发明实施例的阵列基板的制作方法的流程示意图。如图5所示，阵列基板的制作方法包括：
步骤S10：在基板上将每相邻两条扫描线以及相邻两条数据线定义出一像素结构，像素结构包括：薄膜晶体管组件，电连接数据线以及扫描线。
阵列基板包括基板、多条数据线、多条扫描线以及多条共用电极线。多条数据线配置在基板上，多条扫描线与数据线相交，多条共用电极线相交于数据线。步骤S10中形成的像素结构呈中心对称。薄膜晶体管组件位于扫描线与数据线的交界处，即像素结构的四个角处。
步骤S11：第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开。如此两相邻像素电极间的共用电极线不再被扫描线间隔开，可以将相邻的共用电极线进行连接。
步骤S12：将第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起。
在步骤S12中，将两相邻像素电极间的共用电极线进行连接，如此位于像素结构中部的共用电极线呈十字架形状，共用电极线的宽度也增加。在共用电极线靠近扫描线的两端分别设置过孔，通过金属走线与相邻像素结构的共用电极线连接，使共用电极线形成低电阻值的紧密网络，极大地降低了共用电极线的电阻，单点的共用电极线电位波动能迅速地被平衡掉，杜绝了像素充电不准而造成的显示不良。
本发明实施例还提供一种液晶显示器，包括如图3所示的阵列基板。
本发明通过每相邻两条扫描线以及相邻两条数据线定义出一像素结构，包括：薄膜晶体管组件，电连接数据线以及扫描线；第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于薄膜晶体管组件，通过共用电极线间隔开，其中第一像素电极、第二像素电极、第三像素电极以及第四像素电极的共用电极线连接在一起，能够使共用电极线形成低电阻值的紧密网络，极好地稳定了共用电极线的电位，杜绝了像素充电不准而造成的显示不良。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (14)

  1. 一种阵列基板，其中，所述阵列基板包括：
    基板；
    多条数据线，配置在所述基板上；
    多条扫描线，与所述数据线相交；
    多条共用电极线，相交于所述数据线；
    每相邻两条扫描线以及相邻两条数据线定义出一像素结构，所述像素结构包括：
    薄膜晶体管组件，电连接所述数据线以及所述扫描线；
    第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于所述薄膜晶体管组件，通过所述共用电极线间隔开，其中所述第一像素电极、所述第二像素电极、所述第三像素电极以及所述第四像素电极的共用电极线连接在一起。
  2. 根据权利要求1所述的阵列基板，其中，所述像素结构呈中心对称。
  3. 根据权利要求1所述的阵列基板，其中，位于所述像素结构中部的所述共用电极线呈十字架形状。
  4. 根据权利要求1所述的阵列基板，其中，所述共用电极线靠近所述扫描线的两端分别设置过孔。
  5. 根据权利要求4所述的阵列基板，其中，所述过孔通过金属走线与相邻像素结构的所述共用电极线连接。
  6. 一种阵列基板的制作方法，其中，所述方法包括：
    在基板上将每相邻两条扫描线以及相邻两条数据线定义出一像素结构，所述像素结构包括：
    薄膜晶体管组件，电连接所述数据线以及所述扫描线；
    第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于所述薄膜晶体管组件，通过所述共用电极线间隔开；
    将所述第一像素电极、所述第二像素电极、所述第三像素电极以及所述第四像素电极的共用电极线连接在一起。
  7. 根据权利要求6所述的方法，其中，所述像素结构呈中心对称。
  8. 根据权利要求6所述的方法，其中，位于所述像素结构中部的所述共用电极线呈十字架形状。
  9. 根据权利要求6所述的方法，其中，所述共用电极线靠近所述扫描线的两端分别设置过孔，通过金属走线与相邻像素结构的所述共用电极线连接。
  10. 一种液晶显示器，其中，所述液晶显示器包括阵列基板，所述阵列基板包括：
    基板；
    多条数据线，配置在所述基板上；
    多条扫描线，与所述数据线相交；
    多条共用电极线，相交于所述数据线；
    每相邻两条扫描线以及相邻两条数据线定义出一像素结构，所述像素结构包括：
    薄膜晶体管组件，电连接所述数据线以及所述扫描线；
    第一像素电极、第二像素电极、第三像素电极以及第四像素电极，形成2x2结构，电连接于所述薄膜晶体管组件，通过所述共用电极线间隔开，其中所述第一像素电极、所述第二像素电极、所述第三像素电极以及所述第四像素电极的共用电极线连接在一起。
  11. 根据权利要求10所述的液晶显示器，其中，所述像素结构呈中心对称。
  12. 根据权利要求10所述的液晶显示器，其中，位于所述像素结构中部的所述共用电极线呈十字架形状。
  13. 根据权利要求10所述的液晶显示器，其中，所述共用电极线靠近所述扫描线的两端分别设置过孔。
  14. 根据权利要求13所述的液晶显示器，其中，所述过孔通过金属走线与相邻像素结构的所述共用电极线连接。
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