WO2016043066A1 - 異方性導電接着剤、及び接続構造体の製造方法 - Google Patents

異方性導電接着剤、及び接続構造体の製造方法 Download PDF

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Publication number
WO2016043066A1
WO2016043066A1 PCT/JP2015/075221 JP2015075221W WO2016043066A1 WO 2016043066 A1 WO2016043066 A1 WO 2016043066A1 JP 2015075221 W JP2015075221 W JP 2015075221W WO 2016043066 A1 WO2016043066 A1 WO 2016043066A1
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Prior art keywords
anisotropic conductive
connection structure
circuit member
support substrate
mass
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PCT/JP2015/075221
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English (en)
French (fr)
Inventor
隆行 松島
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デクセリアルズ株式会社
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Publication of WO2016043066A1 publication Critical patent/WO2016043066A1/ja

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    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83395—Bonding interfaces outside the semiconductor or solid-state body having an external coating, e.g. protective bond-through coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/83486—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Definitions

  • the present invention relates to an anisotropic conductive adhesive for connecting electronic components and a method for manufacturing a connection structure.
  • This application claims priority on the basis of Japanese Patent Application No. 2014-187303 filed on Sep. 16, 2014 in Japan. This application is incorporated herein by reference. Incorporated.
  • anisotropic conductive films have been used for connecting various electronic components.
  • the connection method using the anisotropic conductive adhesive film is desired to reduce the temperature in order to obtain effects such as reduction of damage to members, reduction in energy costs, and improvement in tact. Therefore, a radical polymerization system that can be pressure-bonded at a temperature of about 140 to 160 ° C. or a cationic polymerization type anisotropic conductive film using an acid generator as a polymerization initiator is advantageous.
  • a cationic polymerization system is preferably applied because of its low adhesiveness to various plastics.
  • soda glass For touch panel sensors, relatively inexpensive soda glass may be used for the purpose of cost reduction, but since soda glass contains the basic hydroxyl group of the alkali component derived from the raw material, cationic polymerization starts. The agent was subject to reaction inhibition, and the polymerization reaction sometimes did not proceed sufficiently.
  • the present invention has been proposed in view of such a conventional situation, and provides an anisotropic conductive adhesive capable of suppressing a reaction inhibition of cationic polymerization and capable of good connection, and a method for manufacturing a connection structure. To do.
  • the anisotropic conductive adhesive according to the present invention is characterized by containing a cationic polymerizable compound, a cationic polymerization initiator, a metal chelate compound, and conductive particles.
  • the manufacturing method of the connection structure according to the present invention includes a first circuit member in which a terminal is formed on a first support substrate, and a second circuit member in which a terminal is formed on a second support substrate. And pressure bonding with an anisotropic conductive adhesive film containing a cationic polymerizable compound, a cationic polymerization initiator, a metal chelate compound, and conductive particles, and curing the anisotropic adhesive film, A connection structure is obtained.
  • the connection structure according to the present invention includes a first circuit member having a terminal formed on a first support substrate, a second circuit member having a terminal formed on a second support substrate, An anisotropic conductive film made of a cured anisotropic conductive material that connects the terminal of the first circuit member and the terminal of the second circuit member, and the anisotropic conductive material is cationically polymerizable It contains a compound, a cationic polymerization initiator, a metal chelate compound, and conductive particles.
  • touch panel device is characterized by including the connection structure described above.
  • the manufacturing method of the connection structure according to the present invention includes a first circuit member in which a terminal is formed on a first support substrate, and a second circuit member in which a terminal is formed on a second support substrate.
  • the first circuit member and the second circuit member are pressure-bonded with a cation-curing anisotropic conductive adhesive film interposed therebetween, and the anisotropic adhesive film is cured to obtain a connection structure.
  • the metal chelate compound reacts with a basic hydroxyl group present on the surface of soda glass, inhibition of cationic polymerization reaction can be suppressed and good connection can be obtained.
  • the anisotropic conductive adhesive contains a cationic polymerizable compound, a cationic polymerization initiator, a metal chelate compound, and conductive particles.
  • the metal chelate compound selectively reacts with a basic hydroxyl group present on the soda glass surface to cover the soda glass surface, so that the cation species is included in the soda glass. It becomes difficult to be influenced by the hydrophilic hydroxyl group, and as a result, reaction inhibition can be suppressed.
  • the shape of an anisotropic conductive material is not specifically limited, Forming in a film form and making it into an anisotropic conductive film is mentioned as a suitable form.
  • Examples of cationically polymerizable compounds include monofunctional epoxy compounds such as ethylene oxide, propylene oxide, butylene oxide, styrene oxide, phenyl glycidyl ether, and butyl glycidyl ether; bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins Heterocyclic epoxy resins such as alicyclic epoxy resins, triglycidyl isocyanate and hydantoin epoxy; Aliphatic epoxy resins such as hydrogenated bisphenol A type epoxy resin, propylene glycol diglycidyl ether, pentaerythritol-polyglycidyl ether; Epoxy resin obtained by reaction of aliphatic, aliphatic or alicyclic carboxylic acid with epichlorohydrin; spiro ring-containing epoxy resin; o-allyl- A glycidyl ether type epoxy resin which is a reaction product of an enol no
  • the content of the cationically polymerizable compound is preferably 5 to 50 wt%, more preferably 10 to 30 wt%.
  • Cationic polymerization initiators are those in which a cationic species opens the epoxy group at the end of the epoxy resin and self-crosslinks the epoxy resins, and a cationic photopolymerization initiator that generates cationic species by light.
  • a cationic photoinitiator that generates a cationic species by either light or heat can be used.
  • Photocationic polymerization initiators include triarylsulfonium salts, benzylsulfonium salts, triphenylsulfonium salts, diphenyl-4-thiophenoxyphenylsulfonium salts, triaryliodonium salts, diaryliodonium salts, diphenyliodonium salts, 4-methoxydiphenyliodonium salts Salt, bis (4-methylphenyl) iodonium salt, bis (4-tert-butylphenyl) iodonium salt, bis (dodecylphenyl) iodonium salt, 1,3-diketo-2-diazo compound, diazobenzoquinone compound, diazonaphthoquinone compound , Hexachloroantimonate, bis (dodecylphenyl) hexafluoroantimonate (4,4′-bis [di ( ⁇ -hydroxyethoxy) phenyls
  • Thermal cationic polymerization initiators include triphenylsulfonium boron tetrafluoride, triphenylsulfonium hexafluoride antimony, triphenylsulfonium hexafluoride arsenic, tri (4-methoxyphenyl) sulfonium hexafluoride arsenic, diphenyl (4-phenyl) Thiophenyl) sulfonium arsenic hexafluoride, pt-butylbenzyltetrahydrothiophenium antimony hexafluoride, N, N-dimethyl-N-benzylanilinium antimony hexafluoride, N, N-dimethyl-N-benzylanily Boron tetrafluoride, N, N-dimethyl-N- (4-chlorobenzyl) anilinium antimony hexafluoride, N, N-dimethyl-N- (1
  • examples of the photo / thermal cationic polymerization initiator include acid generators such as sulfonium salts and iodonium salts.
  • aromatic sulfonium salts can be suitably used from the viewpoint of the speed of polymerization of the epoxy cationic polymerizable substance and the life from room temperature to low temperature.
  • trade names “SI-60L”, “SI-80L”, “SI-100L”, etc. of Sanshin Chemical Industry Co., Ltd. may be mentioned.
  • the content of the cationic polymerization initiator is preferably 0.1 to 30 wt%, more preferably 0.5 to 15 wt%. It is.
  • the central metal is preferably a metal in the third to fifth periods of the periodic table and a semiconductor atom, and Al, Si of the third period metal, Ti, Mn of the fourth period metal, Fe, Co, Ni, Cu, Zn, Ge, and the fifth periodic metal In and Sn are particularly preferable.
  • metal chelate compounds particularly preferably used compounds include aluminum, iron (III), or titanium acetylacetonate (pentanedionate), ethylacetoacetonate (hexanedionate), propylacetoacetonate (heptane). Diate), tetramethylheptanedionate, benzoylacetonates, and the like. These metal chelate compounds may be used alone or in combination of two or more.
  • metal chelate compounds aluminum acetylacetonate and ethylacetoacetonate can be suitably used from the viewpoint of reactivity with the basic hydroxyl group of the alkali component.
  • trade names “Aluminum Chelate D”, “ALCH-TR”, etc. of Kawaken Fine Chemical Co., Ltd. may be mentioned.
  • the content of the metal chelate compound is preferably 0.1 to 20 wt%, more preferably 0. 5 to 10 wt%.
  • conductive particles known conductive particles used in anisotropic conductive films can be used.
  • conductive particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver and gold.
  • particles of metal oxide, carbon, graphite, glass, ceramic, plastic, etc. The thing which coated the metal, the thing which coat
  • examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile / styrene (AS) resin, a benzoguanamine resin, a divinylbenzene resin, a styrene resin, and the like.
  • the particles can be used.
  • the average particle diameter of the conductive particles is usually 1 to 10 ⁇ m, more preferably 2 to 6 ⁇ m.
  • the content of conductive particles is preferably 0.1 to 30 wt%, more preferably 1 to 10 wt%.
  • the anisotropic conductive adhesive preferably contains a film-forming resin, a stress relaxation agent, a silane coupling agent, and a moisture absorbent.
  • the film-forming resin corresponds to, for example, a high-molecular weight resin having an average molecular weight of 10,000 or more, and preferably has an average molecular weight of about 10,000 to 80,000 from the viewpoint of film formation.
  • the film-forming resin include various resins such as phenoxy resin, polyester resin, polyurethane resin, polyester urethane resin, acrylic resin, polyimide resin, and butyral resin. These may be used alone or in combination of two or more. May be used. Among these, it is preferable to use a phenoxy resin from the viewpoints of film formation state, connection reliability, and the like.
  • the content of the film-forming resin is preferably 20 to 80 wt%, more preferably 40 to 60 wt%.
  • the stress relaxation agent examples include epoxidized polybutadiene, hydrogenated styrene-butadiene block copolymer, hydrogenated styrene-isoprene block copolymer, and the like.
  • the content of the stress relaxation agent is preferably 1 to 30 wt%, more preferably 5 to 20 wt%.
  • silane coupling agent examples include epoxy, methacryloxy, amino, vinyl, mercapto, sulfide, and ureido.
  • an epoxy silane coupling agent that generates a silanol group by reaction with moisture can be suitably used.
  • Specific examples available on the market include the trade name “KBM-403” (3-glycidoxypropyltrimethoxysilane) of Shin-Etsu Chemical Co., Ltd.
  • the silanol group reacts with the metal chelate compound to generate an aluminum chelate-silanol active species.
  • this cationic species reacts with the cationic polymerizable compound as a reaction different from the reaction with the cationic polymerization initiator, the cohesive force can be further increased.
  • a moisture absorbent examples include molecular sieve, silica gel, activated alumina and the like. Among these, it is preferable to use a molecular sieve that exhibits excellent adsorptivity even at high temperatures.
  • a coupling agent with a relatively slow hydrolysis reaction rate such as diethoxysilane or triethoxysilane, may be used instead. However, life can be improved reliably.
  • the metal chelate compound when crimping a soda glass substrate, selectively reacts with a basic hydroxyl group present on the glass surface to cover the soda glass surface, Cationic species are less susceptible to basic hydroxyl groups, and as a result, reaction inhibition can be suppressed.
  • the water that exceeds the trap effect of the moisture absorbent in the air around the connection body gradually reacts with the unreacted silane coupling agent to generate silanol groups, so glass and plastic substrates
  • the adhesive force with respect to can be further increased.
  • the manufacturing method of the connection structure according to the present embodiment includes a first circuit member in which a terminal is formed on a first support substrate, and a second circuit member in which a terminal is formed on a second support substrate. Are bonded via an anisotropic conductive adhesive film containing a cationic polymerizable compound, a cationic polymerization initiator, a metal chelate compound, and conductive particles, and the anisotropic adhesive film is cured and connected. Get a structure.
  • soda glass can be suitably used for at least one of the first support substrate and the second support substrate. Since the basic hydroxyl group present on the soda glass surface reacts with the metal chelate compound, the cation species is less susceptible to the basic hydroxyl group contained in the soda glass, and as a result, reaction inhibition is suppressed.
  • the temperature during crimping is preferably 120 to 160 ° C. By performing pressure bonding in this temperature range, the thermal deformation of PET, polycycloolefin, etc. used for the substrate and parts can be relatively small. Further, as the cationic polymerization initiator, a photocuring type or a photo / thermosetting type may be used, and energy rays such as ultraviolet rays may be irradiated while pressing.
  • the crimping tool used at the time of crimping is not particularly limited and can be appropriately selected according to the purpose.
  • the pressing member having a larger area than the object to be pressed may be pressed once, The pressing may be performed in several times using a pressing member having a smaller area than the pressing target.
  • a buffer material may be interposed between the crimping tool and the second circuit member for crimping. By interposing the cushioning material, it is possible to reduce pressure variation and prevent the crimping tool from becoming dirty.
  • connection structure manufacturing method the first circuit member having the terminals formed on the first support substrate, the second circuit member having the terminals formed on the second support substrate, and A connection structure including an anisotropic conductive film made of a cured product of an anisotropic conductive material that connects the terminal of the first circuit member and the terminal of the second circuit member can be obtained.
  • the first circuit member and the second circuit member are not particularly limited and can be appropriately selected according to the purpose.
  • the first circuit member include glass substrates and plastic substrates for touch panel applications, LCD (Liquid Crystal Display) panel applications, and the like.
  • the second circuit member include a flexible substrate (FPC: Flexible Printed Circuit) such as COF (Chip On Film), a tape carrier package (TCP) substrate, and an IC (Integrated Circuit).
  • FPC Flexible Printed Circuit
  • COF Chip On Film
  • TCP tape carrier package
  • IC Integrated Circuit
  • a first support substrate having a transmittance of 80% or more with respect to visible light can be used, and preferably 95% or more. What has the transmittance
  • permeability can be used.
  • a metal chelate compound may be applied in advance to the terminal portion of the soda glass substrate, and then connected using a cationic anisotropic conductive adhesive film. That is, another manufacturing method includes a first circuit member having a terminal formed on a first support substrate, and a second circuit member having a terminal formed on a second support substrate.
  • a connection structure body manufacturing method in which at least one of the support substrate and the second support substrate is soda glass, a metal chelate compound is applied to a terminal portion of the soda glass, and the first circuit member and the second circuit board are coated.
  • the circuit member is pressure-bonded with a cation-curing anisotropic conductive adhesive film, and the anisotropic adhesive film is cured to obtain a connection structure.
  • a metal chelate compound is applied onto soda glass in advance, and the basic hydroxyl group on the soda glass surface reacts with the metal chelate compound, thereby masking the basic hydroxyl group and suppressing curing inhibition. Is done.
  • the coating amount of the metal chelate compound may be a very small amount with a coating thickness of less than 1 ⁇ m. Moreover, when the viscosity of a metal chelate compound is high, it may apply
  • an anisotropic conductive adhesive film containing a silane coupling agent that generates a silanol group by reaction with moisture may be used.
  • a silane coupling agent By adding a silane coupling agent, a silanol group is generated and adhesion to glass or a plastic substrate can be enhanced.
  • the cationic polymerizable compound undergoes a polymerization reaction due to the generation of a cationic species in which the silanol group and the metal chelate have reacted, the reaction proceeds together with the polymerization reaction by the cationic polymerization initiator, thereby enabling low temperature and rapid curing.
  • the metal chelate compound and the silane coupling agent do not coexist in the anisotropic conductive adhesive film, it is not necessary to add a moisture absorbent for preventing life reduction.
  • Example> Examples of the present invention will be described below.
  • a soda glass substrate and a flexible printed circuit board (FPC) were connected using an anisotropic conductive film to produce a connection structure. Then, the peel strength of the connection structure, the life performance of the anisotropic conductive film, and the conduction resistance of the connection structure were evaluated.
  • the present invention is not limited to these examples.
  • connection structure A soda glass substrate for evaluation in which a 200 ⁇ m pitch ITO (Indium Tin Oxide) pattern was formed on the surface of a 0.7 mm thick soda glass was prepared. Further, an FPC for evaluation was prepared in which a Cu pattern of 8 ⁇ m thickness formed by Au—Sn flash plating with a pitch of 200 ⁇ m was formed on a polyimide surface of 38 ⁇ m thickness. An anisotropic conductive film having a thickness of 25 ⁇ m was attached to a soda glass substrate, and an FPC was temporarily fixed thereon, followed by pressing with a heat tool under conditions of 130 ° C. ⁇ 2 MPa ⁇ 10 sec to produce a connection structure.
  • ITO Indium Tin Oxide
  • Connection resistance was measured using a digital multimeter (trade name: Digital Multimeter 7561, manufactured by Yokogawa Electric Corporation). When the resistance value is less than 2.5 ⁇ , “ ⁇ ”, when it is 2.5 ⁇ or more and less than 4.0 ⁇ , “ ⁇ ”, when it is 4.0 ⁇ or more and less than 6.0 ⁇ , “ ⁇ ”, when it is 6.5 ⁇ or more Was marked “x”.
  • a composition containing a desired material from the following was applied to a PET film and dried to prepare an ACF having a thickness of 25 ⁇ m.
  • Phenoxy resin YP50, Nippon Steel & Sumikin Chemical Co., Ltd.
  • Alicyclic epoxy resin Celoxide 2021P, Daicel Corporation Epoxidized polybutadiene: PB3600, Daicel Corporation Thermal cationic curing agent: SI-60L, Sanshin Chemical Industry Co., Ltd.
  • Silane coupling agent KBM-403, Shin-Etsu Chemical Co., Ltd.
  • Aluminum chelate A Aluminum chelate D, Kawaken Fine Chemical Co., Ltd.
  • Aluminum chelate B ALCH-TR, Kawaken Fine Chemical Co., Ltd.
  • Moisture absorbent Molecular sieve 3A Conductive particles: AUL704, Sekisui Chemical Co., Ltd., 4 ⁇ m ⁇
  • Example 1 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 5 parts by mass of aluminum chelate A, conductive ACF was prepared by blending 5 parts by mass of conductive particles. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 2 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, and 1.5 parts by mass of silane coupling agent Part, 5 parts by mass of aluminum chelate A and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 3 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, ACF was prepared by blending 5 parts by mass of aluminum chelate A and 5 parts by mass of conductive particles. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 4 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, 5 parts by mass of aluminum chelate A, 3 parts by mass of moisture absorbent, and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 5 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, 5 parts by mass of aluminum chelate B, 3 parts by mass of water absorbent, and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 6> As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 15 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, 5 parts by mass of aluminum chelate A, 3 parts by mass of moisture absorbent, and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 7 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 1 part by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, 5 parts by mass of aluminum chelate A, 3 parts by mass of moisture absorbent, and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 8> As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, ACF was prepared by blending 10 parts by mass of aluminum chelate A, 3 parts by mass of moisture absorbent, and 5 parts by mass of conductive particles. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 9 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, 3 parts by mass of silane coupling agent, 1 part by mass of aluminum chelate A, 3 parts by mass of moisture absorbent, and 5 parts by mass of conductive particles were blended to prepare ACF. Evaluation of peel strength of the connection structure produced using this ACF was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 10 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, and 5 parts by mass of conductive particles are blended. ACF was prepared. After applying aluminum chelate A onto the terminal part of the soda glass substrate, a connection structure was produced using this ACF. Evaluation of peel strength of the connection structure was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • Example 11 As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, and 1.5 parts by mass of silane coupling agent Part and 5 parts by mass of conductive particles were blended to prepare ACF. After applying aluminum chelate A onto the terminal part of the soda glass substrate, a connection structure was produced using this ACF. Evaluation of peel strength of the connection structure was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • ⁇ Conventional example> As shown in Table 1, 60 parts by mass of phenoxy resin, 20 parts by mass of alicyclic epoxy resin, 15 parts by mass of epoxidized polybutadiene, 5 parts by mass of thermal cationic curing agent, and 1.5 parts by mass of silane coupling agent Part and 5 parts by mass of conductive particles were blended to prepare ACF. Using this ACF, a conventional glass substrate based on a non-alkali glass and a FCP were connected to prepare a connection structure. Evaluation of peel strength of the connection structure was ⁇ , evaluation of life performance was ⁇ , and evaluation of conduction resistance was ⁇ .
  • the peel strength against soda glass was low and the conduction resistance was high. Further, when no aluminum chelate was added as in the conventional example, the peel strength against non-alkali glass was high and the conduction resistance was also good.
  • the peel strength against soda glass was improved by previously applying a metal chelate compound to the terminal portion of soda glass. Moreover, since the metal chelate compound and the silane coupling agent do not coexist in the anisotropic conductive adhesive film, good life performance was obtained.

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Abstract

　カチオン重合の反応阻害を抑え、良好な接続が可能な異方性導電接着剤、及び接続構造体の製造方法を提供する。異方性導電接着剤が、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する。これにより、金属キレート化合物が塩基性の水酸基と反応するため、カチオン重合の反応阻害を抑え、良好な接続を得ることができる。

Description

異方性導電接着剤、及び接続構造体の製造方法
　本発明は、電子部品を接続させる異方性導電接着剤、及び接続構造体の製造方法に関する。本出願は、日本国において２０１４年９月１６日に出願された日本特許出願番号特願２０１４－１８７３０３を基礎として優先権を主張するものであり、この出願は参照されることにより、本出願に援用される。
　従来、種々の電子部品の接続に対して、異方性導電フィルムが用いられている。異方性導電接着フィルムを用いた接続方法は、部材へのダメージ軽減、低エネルギー低コスト化、タクト向上等の効果を得るため、低温化が望まれている。このため、１４０～１６０℃程度の温度で圧着可能なラジカル重合系、又は酸発生剤を重合開始剤とするカチオン重合系の異方性導電フィルムが有利であるが、ラジカル重合系は、一般にガラス、各種プラスチック等に対して接着性が低いため、カチオン重合系が好ましく適用される。
　タッチパネルセンサーには、原価低減を目的に比較的安価なソーダガラスが使用されることがあるが、ソーダガラスは、原料由来のアルカリ成分が有する塩基性の水酸基を含有しているため、カチオン重合開始剤が反応阻害を受けてしまい、重合反応が十分に進まないことがあった。
特開２０１３－１６１３９７号公報
　本発明は、このような従来の実情に鑑みて提案されたものであり、カチオン重合の反応阻害を抑え、良好な接続が可能な異方性導電接着剤、及び接続構造体の製造方法を提供する。
　発明者は、鋭意検討の結果、金属キレート化合物を添加することにより、ソーダガラスのような基板を用いた場合であっても、カチオン重合の反応阻害を抑え、良好な接続が可能であることを見出した。
　すなわち、本発明に係る異方性導電接着剤は、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有することを特徴とする。
　また、本発明に係る接続構造体の製造方法は、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する異方性導電接着フィルムを介在させて圧着し、前記異方性接着フィルムを硬化させ、接続構造体を得ることを特徴とする。
　また、本発明に係る接続構造体は、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材と、前記第１の回路部材の端子と前記第２の回路部材の端子とを接続する異方性導電材料の硬化物からなる異方性導電膜とを備え、前記異方性導電材料が、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有することを特徴とする。
　また、本発明に係るタッチパネル装置は、前述した接続構造体を備えることを特徴とする。
　また、本発明に係る接続構造体の製造方法は、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを備え、前記第１の支持基板及び前記第２の支持基板の少なくとも一方が、ソーダガラスである接続構造体の製造方法であって、前記ソーダガラスの端子部に金属キレート化合物を塗布し、前記第１の回路部材と前記第２の回路部材とをカチオン硬化系の異方性導電接着フィルムを介在させて圧着し、前記異方性接着フィルムを硬化させ、接続構造体を得ることを特徴とする。
　本発明によれば、金属キレート化合物がソーダガラス表面に存在する塩基性の水酸基と反応するため、カチオン重合の反応阻害を抑え、良好な接続を得ることができる。
　以下、本発明の実施の形態について、図面を参照しながら下記順序にて詳細に説明する。
１．異方性導電接着剤
２．接続構造体の製造方法
３．実施例
　＜１．異方性導電接着剤＞
　本実施の形態に係る異方性導電接着剤は、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する。これにより、例えばソーダガラス基板を圧着する際、金属キレート化合物が選択的にソーダガラス表面に存在する塩基性の水酸基と反応してソーダガラス表面をカバーするため、カチオン種がソーダガラスに含まれる塩基性の水酸基の影響を受けにくくなり、その結果、反応阻害を抑制することができる。異方性導電材料の形状は、特に限定されないが、フィルム状に成形して異方性導電フィルムとすることが好適な形態として挙げられる。
　カチオン重合性化合物としては、エチレンオキシド、プロピレンオキシド、ブチレンオキシド、スチレンオキシド、フェニルグリシジルエーテル、ブチルグリシジルエーテル等の１官能性エポキシ化合物；ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグリシジルイソシアネート、ヒダントインエポキシ等の含複素環エポキシ樹脂；水添ビスフェノールＡ型エポキシ樹脂、プロピレングリコールジグリシジルエーテル、ペンタエリスリトール－ポリグリシジルエーテル等の脂肪族系エポキシ樹脂；芳香族、脂肪族もしくは脂環式のカルボン酸とエピクロルヒドリンとの反応によって得られるエポキシ樹脂；スピロ環含有エポキシ樹脂；ｏ－アリル－フェノールノボラック化合物とエピクロルヒドリンとの反応生成物であるグリシジルエーテル型エポキシ樹脂；ビスフェノールＡのそれぞれの水酸基のオルト位にアリル基を有するジアリルビスフェノール化合物とエピクロルヒドリンとの反応生成物であるグリシジルエーテル型エポキシ樹脂；シッフ系化合物、スチルベン化合物およびアゾベンゼン化合物のジグリシジルエーテル型エポキシ樹脂；（１，１，１，３，３，３－ヘキサフルオロ－２－ヒドロキシイソプロピル）シクロヘキサンとエピクロルヒドリンとの反応生成物等の含フッ素脂環式、芳香環式エポキシ樹脂等を用いることができる。これらの中でも、比較的低温でカチオン重合が進行する脂環式エポキシ樹脂を用いることが好ましい。
　カチオン重合性化合物の含有量は、少なすぎると導通信頼性が低くなり、多すぎると接着強度が低くなる傾向があるので、好ましくは５～５０ｗｔ％、より好ましくは１０～３０ｗｔ％である。
　カチオン重合開始剤は、カチオン種がエポキシ樹脂末端のエポキシ基を開環させ、エポキシ樹脂同士を自己架橋させるものであり、光によってカチオン種が発生する光カチオン重合開始剤、熱によってカチオン種が発生する熱カチオン重合開始剤、光、熱のどちらでもカチオン種が発生する光・熱カチオン重合開始剤を用いることができる。
　光カチオン重合開始剤としては、トリアリールスルホニウム塩、ベンジルスルホニウム塩、トリフェニルスルホニウム塩、ジフェニル－４－チオフェノキシフェニルスルホニウム塩、トリアリールヨードニウム塩，ジアリールヨードニウム塩、ジフェニルヨードニウム塩、４－メトキシジフェニルヨードニウム塩、ビス（４－メチルフェニル）ヨードニウム塩、ビス（４－ｔｅｒｔ－ブチルフェニル）ヨードニウム塩、ビス（ドデシルフェニル）ヨードニウム塩、１，３－ジケト－２－ジアゾ化合物、ジアゾベンゾキノン化合物、ジアゾナフトキノン化合物、ヘキサクロロアンチモネート、ビス（ドデシルフェニル）ヘキサフルオロアンチモネート（４，４´－ビス［ジ（β－ヒドロキシエトキシ）フェニルスルフォニオ］フェニルスルフィド、ビス〔４－（ジフェニルスルフォニオ）－フェニル〕スルフィド、ビス〔４－（ジ（４－（２－ヒドロキシエチル）フェニル）スルホニオ）－フェニル〕スルフィド、η５－２，４－（シクロペンタジェニル）〔１，２，３，４，５，６－η－（メチルエチル）ベンゼン〕－鉄（１＋）等の１種以上が挙げられる。
　熱カチオン重合開始剤としては、トリフェニルスルホニウム四フッ化ホウ素、トリフェニルスルホニウム六フッ化アンチモン、トリフェニルスルホニウム六フッ化ヒ素、トリ（４－メトキシフェニル）スルホニウム六フッ化ヒ素、ジフェニル（４－フェニルチオフェニル）スルホニウム六フッ化ヒ素、ｐ－ｔ－ブチルベンジルテトラヒドロチオフェニウム六フッ化アンチモン、Ｎ，Ｎ－ジメチル－Ｎ－ベンジルアニリニウム六フッ化アンチモン、Ｎ，Ｎ－ジメチル－Ｎ－ベンジルアニリニウム四フッ化ホウ素、Ｎ，Ｎ－ジメチル－Ｎ－（４－クロロベンジル）アニリニウム六フッ化アンチモン、Ｎ，Ｎ－ジメチル－Ｎ－（１－フェニルエチル）アニリニウム六フッ化アンチモン、Ｎ－ベンジル－４－ジメチルアミノピリジニウム六フッ化アンチモン、Ｎ－ベンジル－４－ジエチルアミノピリジニウムトリフルオロメタンスルホン酸、Ｎ－（４－メトキシベンジル）－４－ジメチルアミノピリジニウム六フッ化アンチモン、Ｎ－（４－メトキシベンジル）－４－ジエチルアミノピリジニウム六フッ化アンチモン、Ｎ，Ｎ－ジメチル－Ｎ－（４－メトキシベンジル）トルイジニウム六フッ化アンチモン、Ｎ，Ｎ－ジエチル－Ｎ－（４－メトキシベンジル）トルイジニウム六フッ化アンチモン、エチルトリフェニルホスホニウム六フッ化アンチモン、テトラブチルホスホニウム六フッ化アンチモン、ジフェニルヨードニウム六フッ化ヒ素、ジ－４－クロロフェニルヨードニウム六フッ化ヒ素、ジ－４－ブロムフェニルヨードニウム六フッ化ヒ素、ジ－ｐ－トリルヨードニウム六フッ化ヒ素、フェニル（４－メトキシフェニル）ヨードニウム六フッ化ヒ素等の１種以上が挙げられる。
　また、光・熱カチオン重合開始剤としては、スルホニウム塩、ヨードニウム塩等の酸発生剤が挙げられる。
　これらのカチオン重合開始剤の中でも、エポキシ系カチオン重合性物質の重合速度の速さや常温～低温におけるライフの観点から、芳香族スルホニウム塩を好適に用いることができる。市場で入手可能な具体例としては、三新化学工業（株）の商品名「ＳＩ－６０Ｌ」、「ＳＩ－８０Ｌ」、「ＳＩ－１００Ｌ」等を挙げることができる。
　カチオン重合開始剤の含有量は、少なすぎると反応性が無くなり、多すぎると接着剤のライフが低下する傾向があるため、好ましくは０．１～３０ｗｔ％、より好ましくは０．５～１５ｗｔ％である。
　金属キレート化合物は、中心金属が、周期律表の第３周期から第５周期の金属、及び半導体原子であることが好ましく、第３周期金属のＡｌ、Ｓｉ、第４周期金属のＴｉ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇｅ、第５周期金属のＩｎ、Ｓｎが特に好ましい。これら金属キレート化合物のうち、特に好ましく用いられる化合物としては、アルミニウム、鉄（III）、又はチタンのアセチルアセトネート（ペンタンジオネート）、エチルアセトアセトネート（ヘキサンジオネート）、プロピルアセトアセトネート（ヘプタンジオネート）、テトラメチルヘプタンジオネート、ベンゾイルアセトネート類などが挙げられる。これらの金属キレート化合物は、それぞれ単独で使用しても、２種以上を混合して使用してもよい。
　これらの金属キレート化合物の中でも、アルカリ成分の塩基性の水酸基との反応性の観点から、アルミニウムのアセチルアセトネート、エチルアセトアセトネートを好適に用いることができる。市場で入手可能な具体例としては、川研ファインケミカル（株）の商品名「アルミキレートＤ」、「ＡＬＣＨ－ＴＲ」等を挙げることができる。
　金属キレート化合物の含有量は、少なすぎると反応阻害抑制の効果が十分ではなく、多すぎると接着剤のライフが低下する傾向があるため、好ましくは０．１～２０ｗｔ％、より好ましくは０．５～１０ｗｔ％である。
　導電性粒子としては、異方性導電フィルムにおいて使用されている公知の導電性粒子を用いることができる。例えば、ニッケル、鉄、銅、アルミニウム、錫、鉛、クロム、コバルト、銀、金等の各種金属や金属合金の粒子、金属酸化物、カーボン、グラファイト、ガラス、セラミック、プラスチック等の粒子の表面に金属をコートしたもの、これらの粒子の表面に更に絶縁薄膜をコートしたもの等が挙げられる。樹脂粒子の表面に金属をコートしたものである場合、樹脂粒子としては、例えば、エポキシ樹脂、フェノール樹脂、アクリル樹脂、アクリロニトリル・スチレン（ＡＳ）樹脂、ベンゾグアナミン樹脂、ジビニルベンゼン系樹脂、スチレン系樹脂等の粒子を用いることができる。
　導電性粒子の平均粒径としては、通常１～１０μｍ、より好ましくは２～６μｍである。また、導電性粒子の含有量は、好ましくは０．１～３０ｗｔ％、より好ましくは１～１０ｗｔ％である。
　また、異方性導電接着剤は、膜形成樹脂、応力緩和剤、シランカップリング剤、水分吸収剤を含有することが好ましい。膜形成樹脂は、例えば平均分子量が１００００以上の高分子量樹脂に相当し、フィルム形成性の観点から、１００００～８００００程度の平均分子量であることが好ましい。膜形成樹脂としては、フェノキシ樹脂、ポリエステル樹脂、ポリウレタン樹脂、ポリエステルウレタン樹脂、アクリル樹脂、ポリイミド樹脂、ブチラール樹脂等の種々の樹脂が挙げられ、これらは単独で用いてもよく、２種類以上を組み合わせて用いてもよい。これらの中でも、膜形成状態、接続信頼性等の観点からフェノキシ樹脂を好適に用いることが好ましい。膜形成樹脂の含有量は、好ましくは２０～８０ｗｔ％、より好ましくは４０～６０ｗｔ％である。
　応力緩和剤としては、エポキシ化ポリブタジエン、水添スチレン－ブタジエンブロック共重合体、水添スチレン－イソプレンブロック共重合体等が挙げられる。応力緩和剤の含有量は、好ましくは１～３０ｗｔ％、より好ましくは５～２０ｗｔ％である。
　シランカップリング剤としては、エポキシ系、メタクリロキシ系、アミノ系、ビニル系、メルカプト系、スルフィド系、ウレイド系等を挙げることができる。これらの中でも、ガラス、プラスチックに対する接着性の向上の観点から、水分との反応によりシラノール基を生成するエポキシ系のシランカップリング剤を好適に用いることができる。市場で入手可能な具体例としては、信越化学工業（株）の商品名「ＫＢＭ－４０３」（３－グリシドキシプロピルトリメトキシシラン）等を挙げることができる。
　また、下記化学式に示すように、シラノール基は、金属キレート化合物と反応して、アルミキレート－シラノール活性種を発生する。
Figure JPOXMLDOC01-appb-C000001
　このカチオン種は、カチオン重合開始剤による反応とは別の反応としてカチオン重合性化合物と反応するため、凝集力をさらに高めることができる。
　また、アルミキレート－シラノール活性種による反応は、常温以下でも進行し、異方性導電接着剤のライフが低下するため、水分吸収剤を添加することが好ましい。水分吸収剤としては、モルキュラーシーブ、シリカゲル、活性アルミナ等が挙げられる。これらの中でも、高温でも優れた吸着性を示すモルキュラーシーブを用いることが好ましい。なお、水分吸収剤を添加せずに、代わりにジエトキシシランやトリエトキシシランのように、加水分解反応速度が比較的遅いカップリング剤を使用してもよいが、水分吸収剤の添加の方が、確実にライフを向上させることができる。
　このような異方性導電接着剤によれば、例えばソーダガラス基板を圧着する際、金属キレート化合物が選択的にガラス表面に存在する塩基性の水酸基と反応してソーダガラス表面をカバーするため、カチオン種が塩基性の水酸基の影響を受けにくくなり、その結果、反応阻害を抑制することができる。
　また、シランカップリング剤と水分吸収剤とを添加することにより、ガラスやプラスチック基板の表面に付着する水分吸収剤のトラップ効果を越えた水分がシランカップリング剤と反応し、シラノール基が生成するため、ガラスやプラスチック基板に対する接着性を高めることができる。また、シラノール基は、金属キレート化合物と反応してカチオン種を生成し、カチオン重合性化合物を重合反応させるため、凝集力をさらに高めることができる。このように、シランカップリング剤と水分吸収剤とを添加することにより、ライフを向上させることができるとともに、圧着時にはガラスやプラスチック基板に対する接着力を高めることができる。
　また、圧着後においても、接続体周辺の空気中の水分吸収剤のトラップ効果を越えた水分が、未反応のシランカップリング剤と徐々に反応してシラノール基を生成するため、ガラスやプラスチック基板に対する接着力をさらに高めることができる。
　＜２．接続構造体の製造方法＞
　本実施の形態に係る接続構造体の製造方法は、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する異方性導電接着フィルムを介在させて圧着し、異方性接着フィルムを硬化させ、接続構造体を得る。
　本実施の形態では、金属キレート化合物を含有する異方性導電フィルムを用いるため、第１の支持基板及び第２の支持基板の少なくとも一方に、ソーダガラスを好適に用いることができる。ソーダガラス表面に存在する塩基性の水酸基は、金属キレート化合物と反応するため、カチオン種がソーダガラスに含まれる塩基性の水酸基の影響を受けにくくなり、その結果、反応阻害が抑制される。
　圧着時の温度は、１２０～１６０℃であることが好ましい。この温度範囲で圧着することにより、基板や部品に使用されるＰＥＴ、ポリシクロオレフィン等の熱変形が比較的少なくて済む。また、カチオン重合開始剤として、光硬化型又は光・熱硬化型のものをもちいて、押圧しながら紫外線等のエネルギー線を照射させてもよい。
　圧着時に使用する圧着ツールとしては、特に制限はなく、目的に応じて適宜選択することができ、押圧対象よりも大面積である押圧部材を用いて押圧を１回で行ってもよく、また、押圧対象よりも小面積である押圧部材を用いて押圧を数回に分けて行ってもよい。
　圧着ツールの先端形状としては、特に制限はなく、目的に応じて適宜選択することができ、例えば、平面状、曲面状などが挙げられる。なお、先端形状が曲面状である場合、曲面状に沿って押圧することが好ましい。
　また、圧着ツールと第２の回路部材との間に緩衝材を介装して圧着してもよい。緩衝材を介装することにより、押圧ばらつきを低減できると共に、圧着ツールが汚れるのを防止することができる。
　このような接続構造体の製造方法によれば、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材と、第１の回路部材の端子と第２の回路部材の端子とを接続する異方性導電材料の硬化物からなる異方性導電膜とを備える接続構造体を得ることができる。
　第１の回路部材及び第２の回路部材は、特に制限はなく、目的に応じて適宜選択することができる。第１の回路部材としては、例えば、タッチパネル用途、ＬＣＤ（Liquid Crystal Display）パネル用途などのガラス基板、プラスチック基板を挙げることができる。また、第２の回路部材としては、例えば、ＣＯＦ（Chip On Film）などのフレキシブル基板（ＦＰＣ：Flexible Printed Circuits）、テープキャリアパッケージ（ＴＣＰ）基板、ＩＣ（Integrated Circuit）等を挙げることができる。
　また、前述の接続構造体を備えるタッチパネル装置の形態において、例えば、第１の支持基板として、可視光に対して８０％以上の透過率を有するものを用いることができ、好ましくは９５％以上の透過率を有するものを用いることができる。
　また、前述の接続構造体の他の製造方法として、予め金属キレート化合物をソーダガラス基板の端子部に塗布した後、カチオン系の異方性導電接着フィルムを用いて接続を行ってもよい。すなわち、他の製造方法は、第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを備え、第１の支持基板及び第２の支持基板の少なくとも一方が、ソーダガラスである接続構造体の製造方法であって、ソーダガラスの端子部に金属キレート化合物を塗布し、第１の回路部材と第２の回路部材とをカチオン硬化系の異方性導電接着フィルムを介在させて圧着し、異方性接着フィルムを硬化させ、接続構造体を得るものである。
　この製造方法によれば、ソーダガラス上に予め金属キレート化合物を塗布し、ソーダガラス表面の塩基性の水酸基と金属キレート化合物とが反応することにより、塩基性の水酸基がマスクされ、硬化阻害が抑制される。
　金属キレート化合物の塗布量としては、塗布厚が１μｍ未満の極少量でよい。また、金属キレート化合物の粘度が高い場合には、溶剤等で希釈して塗布し、その後溶剤を乾燥させてもよい。
　また、水分との反応によりシラノール基を生成するシランカップリング剤を含有する異方性導電接着フィルムを用いてもよい。シランカップリング剤を添加することにより、シラノール基が生成し、ガラスやプラスチック基板に対する接着性を高めることができる。また、シラノール基と金属キレートとが反応したカチオン種の発生によりカチオン重合性化合物が重合反応するため、カチオン重合開始剤による重合反応と併せて反応が進み、低温・速硬化が可能になる。また、異方性導電接着フィルムに金属キレート化合物とシランカップリング剤とが併存しないため、ライフの低下を防止するための水分吸収剤を添加しなくてもよい。
　＜３．実施例＞
　以下、本発明の実施例について説明する。本実施例では、異方性導電フィルムを用いてソーダガラス基板とフレキシブルプリント基板（ＦＰＣ）とを接続し、接続構造体を作製した。そして、接続構造体の剥離強度、異方性導電フィルムのライフ性能、及び接続構造体の導通抵抗について評価した。なお、本発明はこれらの実施例に限定されるものではない。
　［接続構造体の作製］
　厚み０．７ｍｍのソーダガラス表面に２００μｍピッチのＩＴＯ（Indium Tin Oxide）パターンを形成した評価用のソーダガラス基板を準備した。また、厚み３８μｍのポリイミド表面に、２００μｍピッチのＡｕ－Ｓｎフラッシュメッキされた厚み８μｍのＣｕパターンを形成した評価用のＦＰＣを準備した。厚み２５μｍの異方性導電フィルムを、ソーダガラス基板に貼り付け、その上にＦＰＣを仮固定した後、ヒートツールにて１３０℃－２ＭＰａ－１０ｓｅｃの条件で押圧し、接続構造体を作製した。
　［剥離強度の測定、評価］
　接続構造体のＦＰＣを剥離速度５０ｍｍ／ｍｉｎで９０度方向に剥離した。この剥離に要した力を測定した。剥離強度が８Ｎ／ｃｍ以上の場合を「◎」、剥離強度が８Ｎ／ｃｍ未満６Ｎ／ｃｍ以上の場合を「○」、剥離強度が６Ｎ／ｃｍ未満４Ｎ／ｃｍ以上の場合を「△」、剥離強度が４Ｎ／ｃｍ未満の場合を「×」とした。
　［ライフ性能の測定、評価］
　４０℃、５日のフィルムエージング後に、接続構造体を作製し、前述の剥離強度を測定、評価した。評価指標は、前述の剥離強度の評価と同じとした。
　［導通抵抗の測定、評価］
　デジタルマルチメーター（商品名：デジタルマルチメーター７５６１、横河電機社製）を用いて、接続抵抗（Ω）の測定を行った。抵抗値が２．５Ω未満の場合を「◎」、２．５Ω以上４．０Ω未満の場合を「○」、４．０Ω以上６．０Ω未満の場合を「△」、６．５Ω以上の場合を「×」とした。
　［異方性導電性フィルムの作製］
　下記より所望の材料を配合した組成物をＰＥＴフィルムに塗布し、乾燥させ、厚み２５μｍのＡＣＦを作製した。
　フェノキシ樹脂：ＹＰ５０、新日鉄住金化学（株）
　脂環式エポキシ樹脂：セロキサイド２０２１Ｐ、（株）ダイセル
　エポキシ化ポリブタジエン：ＰＢ３６００、（株）ダイセル
　熱カチオン硬化剤：ＳＩ－６０Ｌ、三新化学工業（株）
　シランカップリング剤：ＫＢＭ－４０３、信越化学工業（株）
　アルミキレートＡ：アルミキレートＤ、川研ファインケミカル（株）
　アルミキレートＢ：ＡＬＣＨ－ＴＲ、川研ファインケミカル（株）
　水分吸収剤：モルキュラーシーブ３Ａ
　導電性粒子：ＡＵＬ７０４、積水化学工業（株）、４μｍφ
　＜実施例１＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、アルミキレートＡを５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は△、ライフ性能の評価は◎、導通抵抗の評価は△であった。
　＜実施例２＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を１．５質量部、アルミキレートＡを５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は○、ライフ性能の評価は○、導通抵抗の評価は○であった。
　＜実施例３＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を３質量部、アルミキレートＡを５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は◎、ライフ性能の評価は△、導通抵抗の評価は◎であった。
　＜実施例４＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を３質量部、アルミキレートＡを５質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は◎、ライフ性能の評価は◎、導通抵抗の評価は◎であった。
　＜実施例５＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を３質量部、アルミキレートＢを５質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は◎、ライフ性能の評価は◎、導通抵抗の評価は◎であった。
　＜実施例６＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を１５質量部、シランカップリング剤を３質量部、アルミキレートＡを５質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は◎、ライフ性能の評価は△、導通抵抗の評価は◎であった。
　＜実施例７＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を１質量部、シランカップリング剤を３質量部、アルミキレートＡを５質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は△、ライフ性能の評価は◎、導通抵抗の評価は○であった。
　＜実施例８＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を３質量部、アルミキレートＡを１０質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は○、ライフ性能の評価は△、導通抵抗の評価は○であった。
　＜実施例９＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を３質量部、アルミキレートＡを１質量部、水分吸収剤を３質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は△、ライフ性能の評価は◎、導通抵抗の評価は○であった。
　＜実施例１０＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。ソーダガラス基板の端子部上にアルミキレートＡを塗布した後、このＡＣＦを用いて接続構造体を作製した。接続構造体の剥離強度の評価は○、ライフ性能の評価は◎、導通抵抗の評価は○であった。
　＜実施例１１＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を１．５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。ソーダガラス基板の端子部上にアルミキレートＡを塗布した後、このＡＣＦを用いて接続構造体を作製した。接続構造体の剥離強度の評価は◎、ライフ性能の評価は◎、導通抵抗の評価は◎であった。
　＜比較例＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を１．５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いて作製した接続構造体の剥離強度の評価は×、導通抵抗の評価は×であった。
　＜従来例＞
　表１に示すように、フェノキシ樹脂を６０質量部、脂環式エポキシ樹脂を２０質量部、エポキシ化ポリブタジエンを１５質量部、熱カチオン硬化剤を５質量部、シランカップリング剤を１．５質量部、導電性粒子を５質量部配合し、ＡＣＦを作製した。このＡＣＦを用いてノンアルカリガラスを基材とした従来のガラス基板とＦＣＰとを接続させ、接続構造体を作製した。接続構造体の剥離強度の評価は○、ライフ性能の評価は○、導通抵抗の評価は○であった。
Figure JPOXMLDOC01-appb-T000002
　比較例のようにアルミキレートを添加していない場合、ソーダガラスに対する剥離強度が低く、導通抵抗も高かった。また、従来例のようにアルミキレートを添加していない場合では、ノンアルカリガラスに対する剥離強度は高く、導通抵抗も良好であった。
　一方、実施例１～９のようにアルミキレートを添加した場合、ソーダガラスに対する剥離強度が高く、導通抵抗も良好であった。また、実施例２，３のようにシランカップリング剤を添加することにより、剥離強度及び導通抵抗が向上した。また、実施例４，５のように水分吸収剤を添加することにより、ライフ性能が向上した。
　また、実施例６，７より、カチオン重合開始剤を０．５～１５ｗｔ％添加することにより、良好な剥離強度、ライフ性能及び導通抵抗が得られた。また、実施例８，９より、アルミキレートを０．５～１０ｗｔ％添加することにより、良好な剥離強度、ライフ性能及び導通抵抗が得られた。
　また、実施例１０，１１のように、予めソーダガラスの端子部に金属キレート化合物を塗布することにより、ソーダガラスに対する剥離強度が向上した。また、異方性導電接着フィルムに金属キレート化合物とシランカップリング剤とが併存しないため、良好なライフ性能が得られた。

Claims (13)

  1. 　カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する異方性導電接着剤。
  2. 　前記金属キレート化合物が、アルミニウムのアセチルアセトネート、又はエチルアセトアセトネートである請求項１記載の異方性導電接着剤。
  3. 　水分との反応によりシラノール基を生成するシランカップリング剤をさらに含有する請求項１又は２記載の異方性導電接着剤。
  4. 　水分吸収剤をさらに含有する請求項３記載の異方性導電接着剤。
  5. 　前記シランカップリング剤が、エポキシ系であり、
    　前記水分吸収剤が、モルキュラーシーブである請求項４記載の異方性導電接着剤。
  6. 　前記金属キレート化合物の含有量が、０．５～１０ｗｔ％である請求項１乃至５のいずれか１項に記載の異方性導電接着剤。
  7. 　前記カチオン重合開始剤が、芳香族スルホニウム塩であり、
    　前記カチオン重合開始剤の含有量が、０．５～１５ｗｔ％である請求項１乃至６のいずれか１項に記載の異方性導電接着剤。
  8. 　第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する異方性導電接着フィルムを介在させて圧着し、前記異方性接着フィルムを硬化させ、接続構造体を得る接続構造体の製造方法。
  9. 　前記第１の支持基板及び前記第２の支持基板の少なくとも一方が、ソーダガラスである請求項８記載の接続構造体の製造方法。
  10. 　第１の支持基板上に端子が形成された第１の回路部材と、
    　第２の支持基板上に端子が形成された第２の回路部材と、
    　前記第１の回路部材の端子と前記第２の回路部材の端子とを接続する異方性導電材料の硬化物からなる異方性導電膜とを備え、
    　前記異方性導電材料が、カチオン重合性化合物と、カチオン重合開始剤と、金属キレート化合物と、導電性粒子とを含有する接続構造体。
  11. 　前記第１の支持基板及び前記第２の支持基板の少なくとも一方が、ソーダガラスである請求項１０記載の接続構造体。
  12. 　請求項１０又は１１に記載の接続構造体を備えるタッチパネル装置。
  13. 　第１の支持基板上に端子が形成された第１の回路部材と、第２の支持基板上に端子が形成された第２の回路部材とを備え、前記第１の支持基板及び前記第２の支持基板の少なくとも一方が、ソーダガラスである接続構造体の製造方法であって、
    　前記ソーダガラスの端子部に金属キレート化合物を塗布し、
    　前記第１の回路部材と前記第２の回路部材とをカチオン硬化系の異方性導電接着フィルムを介在させて圧着し、前記異方性接着フィルムを硬化させ、接続構造体を得る接続構造体の製造方法。
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