WO2016031164A1 - 抵抗率制御方法及びn型シリコン単結晶 - Google Patents
抵抗率制御方法及びn型シリコン単結晶 Download PDFInfo
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- WO2016031164A1 WO2016031164A1 PCT/JP2015/004048 JP2015004048W WO2016031164A1 WO 2016031164 A1 WO2016031164 A1 WO 2016031164A1 JP 2015004048 W JP2015004048 W JP 2015004048W WO 2016031164 A1 WO2016031164 A1 WO 2016031164A1
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- dopant
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- 239000013078 crystal Substances 0.000 title claims abstract description 207
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 141
- 239000010703 silicon Substances 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000002019 doping agent Substances 0.000 claims abstract description 140
- 238000007711 solidification Methods 0.000 claims abstract description 83
- 230000008023 solidification Effects 0.000 claims abstract description 83
- 239000002994 raw material Substances 0.000 claims description 41
- 238000005204 segregation Methods 0.000 claims description 35
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- 229910052698 phosphorus Inorganic materials 0.000 claims description 22
- 239000011574 phosphorus Substances 0.000 claims description 22
- 238000010298 pulverizing process Methods 0.000 claims description 5
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 15
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 14
- 239000000155 melt Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011176 pooling Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Definitions
- the present invention relates to a resistivity control method for a silicon single crystal grown by the CZ method, and an n-type silicon single crystal whose resistivity is controlled by using this resistivity control method.
- an n-type crystal is mainly used.
- EPW epi wafer
- FZ-PW wafer manufactured by FZ method
- CZ-PW wafer manufactured by CZ method
- CZ-PW that uses CZ-PW as it is without depositing an epitaxial layer
- a silicon single crystal manufactured by the CZ method has a segregation phenomenon and it is difficult to make the resistivity distribution in the axial direction (the pulling-up axis direction) uniform.
- Patent Documents 1 and 2 disclose a method of adding a main dopant and a subdopant having a polarity opposite to that of the main dopant and a small segregation coefficient (that is, counter-doping). By using this method, it is possible to improve the axial resistivity distribution of the CZ single crystal.
- the dopant most frequently used in the manufacture of n-type crystals is phosphorus (P), and its segregation coefficient is about 0.35.
- elements having an opposite polarity and having a segregation coefficient smaller than that of phosphorus (P) are Ga, In, Al and the like. These elements are heavy metals.
- B boron
- P phosphorus
- Patent Document 3 discloses a method in which boron (B) is continuously added to phosphorus (P) as a main dopant. If this method is used, an n-type crystal with improved axial resistivity distribution can be produced by counterdoping with phosphorus (P) as the main dopant and boron (B) as the sub-dopant.
- JP 2002-128591 A Japanese Patent Laid-Open No. 2004-307305 Japanese Patent Laid-Open No. 3-247585 Japanese Patent Laid-Open No. 10-029894 JP-A-6-234592
- Patent Document 3 has a problem that it cannot be remelted when the single crystal is dislocated.
- the normal CZ method including the MCZ method
- dislocation occurs, a phenomenon called slip-back occurs in which dislocations generated in the dislocation portion are already single-crystallized but slip to a portion still in a high temperature state.
- a single crystal can be obtained only by the length obtained by subtracting the slip-back length from the length at which dislocations have occurred.
- the top part of the crystal has parts other than resistivity, such as oxygen concentration and grown-in defect characteristics, which do not fall within the standard values.
- Patent Document 4 discloses a method in which dopants having opposite polarities are accommodated in the bottom of the crucible and these are eluted before the resistivity decreases.
- this method does not control the solidification rate or crystal length but controls the amount of crucible dissolved. Since melting of the crucible proceeds even during remelting, if remelted, the dopant to be added will be dissolved earlier than the target position, and the resistivity will increase. Therefore, it cannot be remelted even in this method.
- the present invention has been made in view of the above problems, and can suppress a decrease in yield even when dislocation occurs during the growth of a silicon single crystal in the CZ method, and the resistance of the silicon single crystal.
- An object of the present invention is to provide a resistivity control method capable of accurately controlling the rate.
- the present invention provides a method for controlling the resistivity of a grown silicon single crystal with a dopant when growing the silicon single crystal by a CZ method, wherein the silicon single crystal is a predetermined one.
- a resistivity control method is provided in which doping is performed and the sub-dopant is not doped before the solidification rate reaches the predetermined value ⁇ .
- the secondary dopant is additionally doped, and the secondary dopant is not doped before the solidification rate reaches the predetermined value ⁇ .
- the solidification rate reaches the predetermined value ⁇ , even if dislocation occurs, it can be re-melted, and even if dislocation occurs after the solidification rate reaches the predetermined value ⁇ , Since crystal growth has progressed to some extent, a single crystal can be obtained with a length obtained by subtracting the length of slip-back from the length from the single crystal top where dislocation has occurred, and a decrease in yield can be suppressed. .
- the subdopant is additionally doped according to the solidification rate, the resistivity of the silicon single crystal can be accurately controlled.
- the segregation coefficient of the sub-dopant is larger than the segregation coefficient of the main dopant.
- the present invention can be suitably applied when the segregation coefficient has the above relationship.
- the method further includes the step of repeating the growth of the second and subsequent silicon single crystals by additionally charging the raw material and repeating the growth of the second and subsequent silicon single crystals.
- the step of adding the main dopant, while growing the silicon single crystal the solidification rate to the predetermined value ⁇
- the step of additionally doping the sub-dopant continuously or intermittently according to the solidification rate It is preferable.
- the present invention can also be applied to a multi-pooling method for growing a plurality of silicon single crystals from one crucible.
- the predetermined value ⁇ is equal to or higher than a solidification rate value at which a product can be taken even if slipped back with a straight body length corresponding to the solidification rate, and before the start of silicon single crystal growth. It is preferable that the resistivity of the silicon single crystal is equal to or less than a solidification rate value satisfying a predetermined standard with only the added dopant. If the predetermined value ⁇ is within such a range, it is possible to reliably suppress a decrease in yield.
- the predetermined value ⁇ is in a range of k / 4 ⁇ ⁇ ⁇ 2k (where k / 4 ⁇ ⁇ ⁇ 1 when 2k> 1, where k is the segregation coefficient of the main dopant). Preferably there is. If the predetermined value ⁇ is within such a range, it is possible to reliably suppress a decrease in yield.
- a silicon thin rod containing the sub-dopant or a dopant obtained by pulverizing the silicon crystal containing the sub-dopant into a granular state is inserted into the silicon melt in the region between the growing silicon crystal and the crucible wall or By adding, the subdopant can be additionally doped.
- Such a method can be suitably used as a method of additionally doping a subdopant.
- the resistivity is controlled using the above-described resistivity control method
- the main dopant is P (phosphorus)
- the sub-dopant is B (boron)
- the phosphorus concentration N in the silicon crystal is N.
- difference N P -N B with boron concentration N B of the P and the silicon crystal is, 1.4 ⁇ 10 12 atoms / cm 3 or more and 1.4 ⁇ 10 15 atoms / cm 3 or less
- resistivity 3 ⁇ Provided is an n-type silicon single crystal characterized by being not less than cm and not more than 3000 ⁇ ⁇ cm.
- Such an n-type silicon single crystal can be of high quality and manufactured with a good yield.
- FIG. 4 is a graph showing the relationship between resistivity and solidification rate of a silicon single crystal grown in Example 2. It is a graph which shows the relationship between the resistivity and solidification rate of the silicon single crystal which was going to grow by the comparative example.
- Patent Document 3 discloses a method in which B is continuously added to the main dopant P. If this method is used, the main dopant is P and the subdopant is B. An n-type crystal with improved directional resistivity distribution can be manufactured. However, the method disclosed in Patent Document 3 has a problem in that it cannot be remelted when the single crystal is dislocated.
- the inventors have a resistivity control method capable of suppressing a decrease in yield even when dislocations occur during the growth of a silicon single crystal and accurately controlling the resistivity of the silicon single crystal.
- the secondary dopant is additionally doped when the solidification rate is equal to or higher than the predetermined value ⁇ , and the secondary dopant is not doped before the solidification rate reaches the predetermined value ⁇ .
- the silicon single crystal Since the growth of the crystal has progressed to some extent, it is possible to obtain a single crystal with a length obtained by subtracting the length of slip-back from the length from the top of the single crystal where dislocation has occurred, and to suppress a decrease in yield.
- the headline and the present invention were made.
- the segregation phenomenon and the solidification rate will be briefly described.
- k is a value smaller than 1, so that the impurity concentration taken into the crystal is lower than the impurity concentration in the melt.
- Patent Document 1-2 discloses that when the segregation coefficient of the sub-dopant is smaller than the segregation coefficient of the main dopant, the uniformity in the axial direction can be improved even if the sub-dopant is added only in the initial stage. Therefore, a case where the segregation coefficient of the sub-dopant is larger than the segregation coefficient of the main dopant, which is more difficult to control the resistivity, is more suitable as an object to which the present invention is applied. Further, when phosphorus (P) is used as the main dopant, the segregation coefficient is larger than that of phosphorus (P), and boron (B) that is not a heavy metal can be used as a sub-dopant. For example, the case where the segregation coefficient of the sub-dopant is larger than the segregation coefficient of the main dopant is more suitable.
- the CZ single crystal growing apparatus 100 has a member for containing and melting the raw material polycrystalline silicon, a heat insulating member for shutting off heat, and the like. 1 is accommodated.
- a pulling chamber 2 extending upward is connected to the ceiling (top chamber 11) of the main chamber 1, and a mechanism (not shown) for pulling up a single crystal rod (silicon single crystal) 3 with a wire is provided on the upper portion. Is provided.
- a gas inlet 10 is provided at the upper part of the pulling chamber 2, and an inert gas such as argon gas is introduced and discharged from the gas outlet 9 at the lower part of the main chamber 1.
- a heat shield member 13 is provided so as to face the raw material melt 4, so that radiation from the surface of the raw material melt 4 is cut and the surface of the raw material melt 4 is kept warm.
- a gas purge cylinder 12 is provided above the raw material melt 4 so that the periphery of the single crystal rod 3 can be purged with an inert gas introduced from the gas inlet 10.
- the top chamber 11 is provided with a thin rod insertion machine 14, and is configured such that a thin rod crystal (silicon thin rod) 15 containing a subdopant can be inserted into the raw material melt 4 when the subdopant is additionally doped. Yes.
- the main dopant is initially doped so that the silicon single crystal has a predetermined conductivity type (see S11 in FIG. 1).
- the main dopant is introduced into the raw material melt 4 so that the silicon single crystal 3 has a predetermined conductivity type.
- phosphorus (P) can be used as the main dopant when growing an n-type silicon single crystal.
- the silicon single crystal 3 is grown without adding a sub-dopant until the solidification rate reaches a predetermined value ⁇ , that is, until the length of the straight body portion A of the silicon single crystal 3 becomes L ⁇ .
- L ⁇ is the length of the straight body portion of the silicon single crystal 3 when the solidification rate is a predetermined value ⁇ .
- the subdopant is not additionally doped. Therefore, even if dislocation formation occurs until then, the silicon single crystal 3 is remelted. Can be redone.
- the silicon single crystal 3 is grown using the CZ method.
- the CZ method includes a so-called MCZ method in which a magnetic field is applied.
- the solidification rate (that is, the length of the straight body portion).
- the silicon single crystal 3 is grown while additionally doping the sub-dopant continuously or intermittently.
- boron (B) can be used as the sub-dopant when phosphorus (P) is used as the main dopant.
- the silicon single crystal has been grown to some extent.
- the single crystal can be obtained by finishing the growth and subtracting the slip-backed length from the length from the top of the silicon single crystal 3 where dislocation has occurred.
- the segregation coefficient of the sub-dopant is larger than the segregation coefficient of the main dopant.
- the present invention can be suitably applied when the segregation coefficient has the above relationship.
- the method further includes the step of repeating the growth of the second and subsequent silicon single crystals by additionally charging the crucible with the raw material,
- the step of adding the main dopant and the subdopant before the solidification rate reaches the predetermined value ⁇ while growing the silicon single crystal is preferable.
- the present invention when applying the present invention in the multi-pooling method for growing a plurality of silicon single crystals by additionally charging the raw material from one crucible, at the time of starting the growth of the second and subsequent silicon single crystals, Since the sub-dopant is contained in the raw material melt 4, the single crystal grown from now on contains a dopant having a conductivity type opposite to that of the main dopant from the top of the single crystal. Therefore, the concentration of the sub-dopant contained in the top of the single crystal, that is, the concentration of the sub-dopant in the raw material melt 4 multiplied by the segregation coefficient of the sub-dopant is added, and the main dopant should be added.
- the subdopant is not additionally doped when the solidification rate is within a certain value ( ⁇ ). Since the main dopant is added to offset the sub-dopant added in the previous silicon crystal growth, while the sub-dopant is not additionally doped (that is, until the solidification rate reaches a predetermined value ⁇ ), Remelting is possible even when dislocation occurs.
- an appropriate amount corresponding to the solidification rate obtained from the amounts of the main dopant and the sub-dopant doped so far is added continuously or intermittently. Is preferred. In this way, the resistivity can be accurately controlled even in the multi-pooling method in which the sub-dopant is added before the single crystal growth.
- the predetermined value ⁇ of the above solidification rate is equal to or higher than the solidification rate value at which the product can be taken even if slipped back by dislocation with a straight body length corresponding to the solidification rate, and before the start of the growth of the silicon single crystal It is preferable that the resistivity of the silicon single crystal is equal to or less than a solidification rate value satisfying a predetermined standard with only the dopant added to. If the predetermined value ⁇ is set in this way, remelting is possible even if the dislocation is performed while the auxiliary dopant is not additionally doped. In addition, even when dislocations are formed after additional doping with a sub-dopant, the product can be taken out because it is already longer than the product can be obtained. Furthermore, the raw material can be additionally charged in this state, and the next silicon single crystal can be grown.
- the moment of additional doping with a sub-dopant may cause dislocation. If a small amount of the sub-dopant is introduced immediately after the start of additional doping, it can be remelted.
- the resistivity at the position of the topmost silicon single crystal that can be taken as the initial product is within the standard even when the resistivity increases due to the amount of the sub-dopant additionally doped up to that point. If it is about the extent, even if it is remelted, it does not cause a decrease in yield due to the resistivity, so it can be remelted.
- the resistivity of the most top position that can be taken as a product does not fall within the standard, but if it is judged that the amount of decrease in yield is small, to the extent that the resistivity falls within the standard, Even after additional doping with a subdopant, it can be remelted.
- the predetermined value ⁇ of the solidification rate is set to a range of k / 4 ⁇ ⁇ ⁇ 2k (where k / 4 ⁇ ⁇ ⁇ 1 when 2k> 1), where k is the segregation coefficient of the main dopant. it can.
- the predetermined value ⁇ of the solidification rate is equal to or higher than the solidification rate at which the product can be taken even if slipping back is caused by the dislocation by the crystal length, and only the dopant introduced before the start of crystal pulling. It is preferable that the resistivity is equal to or less than the solidification rate satisfying the standard.
- the silicon single crystal length corresponding to the solidification rate with which the resistivity satisfies the standard is long when the segregation coefficient of the main dopant is large, and short when it is small. Therefore, the predetermined value ⁇ of the solidification rate is a value approximately proportional to the segregation coefficient k of the main dopant.
- the predetermined value ⁇ of the solidification rate is a value approximately proportional to the segregation coefficient k of the main dopant.
- it is difficult to express this concretely. Because it depends on the product design of the crystal. For example, the position where the crystal quality such as oxygen concentration and crystal defects falls within the standard on the top side is 10 cm or 30 cm in length. This is because this length depends on the strictness of quality standards other than resistivity.
- the ⁇ solidification rate that satisfies the standard only with the dopant introduced before the start of pulling up the single crystal '' will ultimately depend on the product design of the crystal It will be, and can not be determined uniquely. Therefore, when an approximate value is set in consideration of the shift amount before and after the product design, the range of the predetermined value ⁇ of the solidification rate becomes k / 4 ⁇ ⁇ ⁇ 2k. If the predetermined value ⁇ of the solidification rate is set to a value larger than k / 4, the product can be removed even when slipping back due to dislocation with a silicon single crystal length corresponding to the fixed rate. If the predetermined value ⁇ is set to a value smaller than 2 k, the resistivity can satisfy the standard only with the dopant added before the start of the silicon single crystal growth.
- a method of additionally doping an appropriate amount of a subdopant according to the solidification rate a method of inserting a silicon thin rod containing the subdopant into the raw material melt 4 between the growing silicon single crystal 3 and the crucible wall, Alternatively, it is possible to use a method in which a dopant obtained by pulverizing a silicon crystal containing a sub-dopant into particles is put into a raw material melt 4 between a growing silicon single crystal 3 and a crucible wall. If such a method is used, an appropriate amount can be additionally doped according to the solidification rate.
- the silicon thin rod 15 when the silicon thin rod 15 is inserted into the raw material melt 4 between the growing silicon single crystal 3 and the crucible wall, the silicon thin rod 15 is sealed and attached to the top chamber 11 so as to maintain the furnace pressure, A movable device (thin rod insertion machine 14 in FIG. 2) that can move the rod approximately vertically can be used. For this, the technique disclosed in Patent Document 5 can be applied.
- the top is sealed so as to maintain the furnace pressure so that a dopant obtained by pulverizing the silicon crystal containing the sub-dopant into a granular form is introduced into the raw material melt 4 between the growing silicon single crystal 3 and the crucible wall.
- a tube attached to the chamber 11 and guiding the crushed dopant into the raw material melt 4 between the growing single crystal and the crucible wall can be used.
- the pipe for guiding the crushed dopant to the raw material melt 4 is structurally simple.
- the granular dopant is introduced beside the growing single crystal, The dopant is scattered or floated, and the possibility of dislocation is increased.
- the installation of the movable device (thin rod insertion machine 14) that can move the crystal rod 15 in the vertical direction is higher than the above guide tube in terms of cost, the crystal rod is placed beside the growing crystal. Even if it is inserted, there is an advantage that the silicon single crystal 3 being grown is difficult to dislocation.
- the n-type silicon single crystal of the present invention is manufactured using the resistivity control method as described above, using phosphorus (P) as a main dopant, boron (B) as a sub-dopant, and a phosphorus concentration in the single crystal.
- N P and the difference N P -N B with boron concentration N B is 1.4 ⁇ 10 12 atoms / cm 3 or more and 1.4 ⁇ 10 15 atoms / cm 3 or less, a resistivity of 3 [Omega] ⁇ cm or more, 3000 ⁇ ⁇ cm or less.
- n-type silicon single crystal with phosphorus (P) as the main dopant and boron (B) as the sub-dopant both elements are widely used elements for device manufacturing, which is an unexpected problem. Is less likely to occur.
- a vertical device for high withstand voltage power since a current flows in the single crystal and a reverse bias is applied in the single crystal, a single crystal having a relatively high resistivity and high resistance uniformity is desired. Therefore, an n-type silicon single crystal in which the phosphorus concentration in the single crystal is higher than the boron concentration, the difference in the concentration is in the above range, and the resistivity is in the above range is suitable.
- a silicon single crystal that uses the resistivity control method of the present invention and is controlled so that the resistivity falls within a narrow standard within the above range is a silicon single crystal that is optimal for the latest devices such as power devices. .
- Example 1 Using the CZ single crystal growth apparatus 100 shown in FIG. 2, an n-type silicon single crystal having a resistivity standard of 55-75 ⁇ ⁇ cm and a diameter of 200 mm was grown.
- the initial charge amount of raw material silicon was 200 kg, and about 160 kg of silicon single crystal was grown. Since the single crystal top part may not contain quality other than resistivity (for example, oxygen concentration, etc.), considering this, the resistivity is about 20 cm from the top of the straight body part and the solidification rate is about 0.09.
- P phosphorous
- the dope amount was 0.82 g of a dopant prepared by crushing a silicon single crystal having a phosphorus concentration of 4 ⁇ 10 19 atoms / cm 3 into particles. With this amount of doping, the resistivity falls within the standard until the length of the straight body portion is about 100 cm and the solidification rate is about 0.4 unless additional doping of the sub-dopant is performed. Therefore, the length of the straight body portion is shorter than this, and even when dislocation occurs, the silicon single crystal is grown up to a length of 85 cm and a solidification rate of about 0.34 so that the product can be removed. At that time, additional doping of the secondary dopant was started. That is, the predetermined value ⁇ of the solidification rate described above is about 0.34, and the sub-dopant was not doped until the predetermined value ⁇ was reached.
- the additional doping of the sub-dopant was performed by attaching the thin bar crystal 15 to the tip of the thin bar inserter 14 in FIG. 2 and inserting the thin bar crystal 15 into the raw material melt 4.
- the thin rod crystal (silicon rod) 15 is 2 cm ⁇ from a silicon single crystal block having a resistivity of 0.15 ⁇ cm cut out from a single crystal grown by doping boron (B) with a diameter of about 300 mm and a length of about 300 mm. What was cut out as a prism in the vertical direction of 2 cm ⁇ 30 cm was used.
- the method for producing the thin rod crystal is not limited to this. For example, if the horizontal direction is cut out from the block, the resistivity can be controlled with higher accuracy.
- FIG. 3 shows a profile of the resistivity in the axial direction (that is, the pulling axis direction) obtained as a result (that is, the relationship between the resistivity and the solidification rate of the grown silicon single crystal).
- difference N P -N B from the resistivity and phosphorus concentration N P and boron concentration N B of the single crystal is 5.5-7.1 ⁇ 10 13 atoms / cm 3 .
- Example 1 even when dislocation occurs when the length of the straight body portion is less than 85 cm (solidification rate of about 0.34), it can be remelted and remanufactured. And even if it was a case of remelting and remanufacturing, finally a resistivity within the standard could be obtained from a solidification rate of about 0.09 to 0.75. When the secondary dopant is not additionally doped, the resistivity falls within the standard from the solidification rate of about 0.09 to 0.4, so that the product is about twice that of the case where the secondary dopant is not additionally doped. I was able to get the length.
- Example 2 After growing the crystal of Example 1, an additional 160 kg of silicon raw material was charged to make the total weight of the raw material 200 kg. In the growth of the second silicon single crystal, an n-type silicon single crystal having a resistivity standard of 55-75 ⁇ ⁇ cm and a diameter of 200 mm was grown.
- the phosphorus (P) concentration in the raw material melt 4 remaining at the end of the growth of the first silicon single crystal is 1.7 ⁇ 10 14 atoms / cm 3
- the boron (B) concentration is 6.7 ⁇ 10 13 atoms / Calculated as cm 3 .
- the phosphorus (P) concentration is set to 4 ⁇ 10 19 atoms / cm 3 so that the length of the straight body portion is about 20 cm, the solidification rate is about 0.09, and the resistivity falls within the standard.
- a raw material melt for growing a second silicon single crystal was prepared by doping 0.79 g of a dopant prepared by pulverizing silicon crystals. Since boron (B) is additionally doped in the growth of the first silicon single crystal, the resistivity satisfies the standard without additional doping as it is. The rate is up to about 0.38.
- the length of the straight body portion is shorter than this, and even when dislocation is generated, the length of the straight body portion is 80 cm and the solidification rate is about 0.32, which is the length that can take the product.
- An additional doping of the side dopant was started. That is, the predetermined value ⁇ of the solidification rate described above is about 0.32.
- the additional dope was prepared by attaching a thin rod crystal (silicon thin rod) 15 having a resistivity of 0.15 ⁇ ⁇ cm, 2 cm ⁇ 2 cm ⁇ 30 cm to the tip of the thin rod inserter 14 in FIG. Was inserted into the raw material melt 4.
- boron (B) was continuously doped.
- the doping amount is ⁇ (1 ⁇ x) (kp ⁇ 1) ⁇ 1+ [1 + kp ⁇ (1 ⁇ x) (kp ⁇ 1 )] / kb ⁇ (where kp is the segregation of phosphorus)
- the amount proportional to the coefficient, kb is the segregation coefficient of boron, and x is the solidification rate).
- a silicon single crystal was grown in the same manner as in Example 2 except that the additional doping of the sub-dopant was started with the start of growth of the straight body portion of the silicon single crystal.
- dislocations occurred with the length of the straight body portion of 60 cm and a solidification rate of 0.24. Therefore, an attempt was made to remelt, but when the crystal was grown again after remelting, the resistivity at the crystal top was about 80 ⁇ ⁇ cm.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
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Abstract
Description
偏析係数が上記のような関係にある場合に、本発明を好適に適用することができる。
所定値αがこのような範囲であれば、歩留まりの低下を確実に抑制することができる。
所定値αがこのような範囲であれば、歩留まり低下を確実に抑制することができる。
副ドーパントを追加ドープする方法として、このような方法を好適に用いることができる。
まず、シリコン単結晶が所定の導電型を有するように主ドーパントを初期ドーピングする(図1のS11参照)。
なお、シリコン単結晶3の育成は、CZ法を用いて行われる。ここでCZ法とは、磁場を印加するいわゆるMCZ法も含むものとする。
偏析係数が上記のような関係にある場合に、本発明を好適に適用することができる。
このように、1つのルツボから原料を追加チャージすることで複数本のシリコン単結晶を育成するマルチプーリング法において本発明を適用する場合、2本目以降のシリコン単結晶の育成を開始する時点で、原料融液4の中に副ドーパントが含まれているので、これから育成する単結晶には、主ドーパントと反対の導電型を有するドーパントが単結晶トップから含まれてしまう。そこで単結晶トップで含まれる副ドーパントの濃度、つまり副ドーパントの原料融液4中の濃度に副ドーパントの偏析係数を掛けた分の濃度を相殺する分の主ドーパントを追加した上で、狙うべき抵抗率に相当する主ドーパントの量に調整する必要がある。
このように主ドーパントの濃度が調整された原料融液から単結晶を引上げる際にも、固化率が一定値(α)以内では副ドーパントを追加ドープしないことが好ましい。それまでのシリコン結晶育成で追加した副ドーパントを相殺する分の主ドーパントが投入されているので、新たに副ドーパントを追加ドープしない間は(すなわち、固化率が所定値αになるまでは)、有転位化が生じても再溶融が可能である。固化率が所定値α以上になった後には、それまでにドープされている主ドーパント及び副ドーパントの量から求めた、固化率に応じた適正な量を連続的または断続的に追加ドープすることが好ましい。このようにすればその前の単結晶育成までに副ドーパントが追加されているマルチプーリング法であっても、抵抗率を正確に制御することができる。
このように所定値αを設定すれば、副ドーパントを追加ドープしない間は、有転位化しても再溶融が可能である。また、副ドーパントを追加ドープした後に有転位化した場合にも、すでに製品が取れる長さ以上であるので結晶を取り出し製品を取ることができる。さらにはこの状態に更に原料を追加チャージして、次のシリコン単結晶の育成に進むこともできる。
さらには、製品としてとることができる最もトップ側の位置の抵抗率は規格内に入らないが、抵抗率が規格内に入る領域が多少ずれる程度で、歩留まり低下量が少ないと判断されれば、副ドーパントを追加ドープした後であっても再溶融可能である。
しかしながら、これを具体的に表すことは難しい。なぜならその結晶の製品設計に依存するからである。例えばトップ側で酸素濃度や結晶欠陥等の結晶品質が規格に入る位置が直胴長さ10cmであったり30cmであったりする。この長さは抵抗率以外の品質の規格の厳しさに依存するからである。抵抗率は製品となる長さで規格に入るように調整するので、「単結晶引上げ開始前までに投入されたドーパントだけで抵抗率が規格を満たす固化率」は結局その結晶の製品設計に依存することとなり、一義的に決めることができない。そこでこの製品設計による前後のシフト分も考慮しておおよその値を設定すると、固化率の所定値αの範囲は、k/4≦α≦2kとなる。固化率の所定値αをk/4より大きい値とすれば、その固定率に対応するシリコン単結晶長さで有転位化してスリップバックしても製品が取れるようにすることができ、固化率の所定値αを2kより小さい値とすればシリコン単結晶育成開始前までに投入されたドーパントだけで抵抗率が規格を満たすことができる。
このような方法を用いれば、固化率に応じて適切な量を追加ドープすることが可能である。例えば、シリコン細棒15を育成中のシリコン単結晶3とルツボ壁との間の原料融液4へ挿入する場合には、炉内圧を保てるように密閉してトップチャンバー11に取り付けられ、結晶細棒をおおよそ上下方向に移動可能な可動装置(図2の細棒挿入機14)を用いることができる。これは特許文献5などで開示された技術を応用できる。
あるいは、副ドーパントを含むシリコン結晶を粒状に砕いたドープ剤を育成中のシリコン単結晶3とルツボ壁との間の原料融液4へ投入するように、炉内圧を保てるように密閉してトップチャンバー11に取り付けられ、粒状に砕いたドープ剤を育成中の単結晶とルツボ壁との間の原料融液4へ誘導する管を用いることができる。
副ドーパントを追加ドープする機構としては、粒状に砕いたドープ剤を原料融液4へ誘導する管が構造的に簡単であるが、粒状ドーパントを育成中の単結晶のそばに投入するため、粒状ドーパントが飛散あるいは浮遊して有転位化の可能性が高くなる。一方で、結晶細棒15を上下方向に移動可能な可動装置(細棒挿入機14)の設置は、コスト的には上記の誘導管より高いが、育成中の結晶のそばに結晶細棒を挿入しても育成中のシリコン単結晶3が有転位化しにくいという利点がある。
本発明のn型シリコン単結晶は、上述のような抵抗率制御法を用いて製造され、主ドーパントとしてリン(P)を用い、副ドーパントとしてボロン(B)を用い、単結晶中のリン濃度NPとボロン濃度NBとの差NP-NBが1.4×1012atoms/cm3以上、1.4×1015atoms/cm3以下であり、抵抗率が3Ω・cm以上、3000Ω・cm以下である。
このように、主ドーパントをリン(P)、副ドーパントをボロン(B)としたn型シリコン単結晶であれば、どちらの元素もデバイス製造にとって広く用いられている元素であり、予想外の不具合が出る可能性が少ない。特に高耐圧のパワー用の縦型デバイスでは、単結晶中に電流が流れ、また単結晶中に逆バイアスがかかるので、比較的高抵抗率で、かつ抵抗均一性が高い単結晶が望まれることから、単結晶中のリン濃度がボロン濃度より高く、その濃度の差が上記の範囲であり、抵抗率が上記の範囲であるn型シリコン単結晶が適している。また、本発明の抵抗率制御方法を用いれば、CZ法において単結晶のトップ部からボトム部までを、これらの範囲のうちの所望の濃度差および抵抗率に、ほぼ均一に制御することが可能である。従って本発明の抵抗率制御方法を用い、かつ、上記の範囲の中で抵抗率が狭い規格内に入るように制御されたシリコン単結晶は、パワーデバイスなど最新デバイスに最適なシリコン単結晶である。
図2に示したCZ単結晶育成装置100を用いて、n型で、抵抗率の規格が55-75Ω・cm、直径200mmのシリコン単結晶を育成した。原料シリコンの初期チャージ量200kgとし、約160kgのシリコン単結晶を育成した。単結晶トップ部は抵抗率以外の品質(例えば、酸素濃度、等)が入らない場合があるので、これを考慮して、直胴部分のトップから約20cm、固化率約0.09で抵抗率が規格内に入るように、リン(P)を主ドーパントとして初期ドープした。ドープ量は、リン濃度を4×1019atoms/cm3としたシリコン単結晶を粒状に砕いて用意したドープ剤0.82gとした。このドープ量であれば、副ドーパントの追加ドープをしなければ直胴部分の長さ約100cm、固化率約0.4まで抵抗率が規格内に入るものである。従って、直胴部分の長さがこれよりも短く、また、有転位化が発生した場合でも、製品が取れるような直胴部分の長さ85cm、固化率約0.34までシリコン単結晶を育成した時点で、副ドーパントの追加ドープを開始した。すなわち、上記で説明した固化率の所定値αは、約0.34であり、所定値αになるまでは、副ドーパントをドープしなかった。
実施例1の結晶を育成した後、シリコン原料を約160kg追加チャージして原料の総重量を200kgとした。2本目のシリコン単結晶の育成においても、n型で、抵抗率の規格が55-75Ω・cm、直径200mmのシリコン単結晶を育成した。1本目のシリコン単結晶の育成終了時に残っていた原料融液4中のリン(P)濃度は1.7×1014atoms/cm3、ボロン(B)濃度は6.7×1013atoms/cm3と計算される。そこで、これを考慮して、直胴部分の長さ約20cm、固化率約0.09で抵抗率が規格内に入るように、リン(P)濃度を4×1019atoms/cm3としたシリコン結晶を粒状に砕いて用意したドープ剤を0.79gドープして、2本目のシリコン単結晶を育成するための原料融液を用意した。1本目のシリコン単結晶の育成でボロン(B)を追加ドープしているので、このまま追加ドープしないで抵抗率が規格を満たすのは、1本目よりもやや短い直胴部分の長さ95cm、固化率約0.38までである。そこで直胴部分の長さがこれよりも短く、また、有転位化が発生した場合でも、製品が取れる長さである直胴部分の長さ80cm、固化率約0.32となった時点から副ドーパントの追加ドープを開始した。すなわち、上記で説明した固化率の所定値αは、約0.32である。
副ドーパントの追加ドープをシリコン単結晶の直胴部分の育成開始とともに始めたことを除いては、実施例2と同様にしてシリコン単結晶の育成を行った。この設定であれば、図5に示すように単結晶トップ部から単結晶ボトム部までほぼフラットな抵抗率を得ることができる予定であった。しかしながら、直胴部分の長さ60cm、固化率0.24で有転位化が発生してしまった。そこで再溶融しようとしたが、再溶融後に再度結晶を育成した場合、結晶トップ部での抵抗率が約80Ω・cmとなってしまう計算となった。再度単結晶を引上げる際に、再度シリコン単結晶の直胴部分の育成開始とともに副ドーパントの追加ドープを始めたとすると、抵抗率が規格内のシリコン単結晶を全く得ることはできない。そこで、直胴部分の長さ60cm分約48kgのシリコン単結晶を原料融液から切り離しCZ単結晶製造装置から取り出した。取り出したシリコン単結晶には直胴部分のトップから長さ30cm近くまでスリップバックがあった。直胴部分のトップから20cm~30cmの10cm分が製品として取れる可能性はあったが、ブロック長さが短く、加工ロス等を考慮すると、コストパフォーマンスが悪いので、廃棄処分とした。以上のように追加ドープをシリコン単結晶の直胴部分の育成開始とともに始めたことによって、48kg分の原料から製品が全く取れず、大きな歩留まり低下を招く結果となった。
Claims (7)
- CZ法によってシリコン単結晶を育成する際に、育成されるシリコン単結晶の抵抗率をドーパントによって制御する方法であって、
前記シリコン単結晶が所定の導電型を有するように主ドーパントを初期ドーピングする工程と、
前記シリコン単結晶を育成しながら、(結晶化した重量)/(初期シリコン原料の重量)で表される固化率に応じて、前記主ドーパントと反対の導電型を有する副ドーパントを、連続的又は断続的に追加ドープする工程と
を有し、
前記追加ドープする工程において、前記固化率が所定値α以上のときに前記副ドーパントを追加ドープし、前記固化率が前記所定値αになる前には前記副ドーパントをドープしないことを特徴とする抵抗率制御方法。 - 前記副ドーパントの偏析係数が、前記主ドーパントの偏析係数よりも大きいことを特徴とする請求項1に記載の抵抗率制御方法。
- 1本目のシリコン単結晶を育成した後、原料を追加チャージして2本目以降のシリコン単結晶の育成を繰り返す工程をさらに有し、
前記2本目以降のシリコン単結晶の育成を繰り返す工程は、
それまでのシリコン単結晶の育成において追加ドープされた前記副ドーパントの量を考慮して、前記主ドーパントを加える段階と、
シリコン単結晶を育成しながら、前記固化率が前記所定値αになる前には前記副ドーパントをドープしないで、前記固化率が前記所定値α以上になった後に、前記固化率に応じて、前記副ドーパントを連続的または断続的に追加ドープする段階と
を有することを特徴とする請求項1又は請求項2に記載の抵抗率制御方法。 - 前記所定値αは、その固化率に対応する直胴長さで有転位化してスリップバックしても製品が取れる固化率値以上であり、かつ、シリコン単結晶の育成開始前までに加えられたドーパントだけでシリコン単結晶の抵抗率が所定の規格を満たす固化率値以下であることを特徴とする請求項1から請求項3のいずれか一項に記載の抵抗率制御方法。
- 前記所定値αは、前記主ドーパントの偏析係数をkとしたときに、k/4≦α≦2k(ただし、2k>1の場合は、k/4≦α≦1)の範囲であることを特徴とする請求項1から請求項4のいずれか一項に記載の抵抗率制御方法。
- 前記副ドーパントを含むシリコン細棒、又は、前記副ドーパントを含むシリコン結晶を粒状に砕いたドープ剤を、育成中のシリコン結晶とルツボ壁との間の領域のシリコン融液へ挿入又は投入することで、前記副ドーパントを追加ドープすることを特徴とする請求項1から請求項5のいずれか一項に記載の抵抗率制御方法。
- 請求項1から請求項6のいずれか一項に記載の抵抗率制御方法を用いて抵抗率が制御され、
前記主ドーパントがP(リン)であり、前記副ドーパントがB(ボロン)であり、
シリコン結晶中のリン濃度NPとシリコン結晶中のボロン濃度NBとの差NP-NBが、1.4×1012atoms/cm3以上、1.4×1015atoms/cm3以下であり、
抵抗率が3Ω・cm以上、3000Ω・cm以下であることを特徴とするn型シリコン単結晶。
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CN105887193A (zh) * | 2016-05-30 | 2016-08-24 | 上海超硅半导体有限公司 | 轴向电阻率均匀的硅单晶生长技术 |
CN105951173A (zh) * | 2016-05-30 | 2016-09-21 | 上海超硅半导体有限公司 | N型单晶硅晶锭及其制造方法 |
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CN105970284A (zh) * | 2016-05-30 | 2016-09-28 | 上海超硅半导体有限公司 | 一种p型单晶硅片及其制造方法 |
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US10920337B2 (en) | 2016-12-28 | 2021-02-16 | Globalwafers Co., Ltd. | Methods for forming single crystal silicon ingots with improved resistivity control |
US11085128B2 (en) | 2018-10-12 | 2021-08-10 | Globalwafers Co., Ltd. | Dopant concentration control in silicon melt to enhance the ingot quality |
US11959189B2 (en) | 2019-04-11 | 2024-04-16 | Globalwafers Co., Ltd. | Process for preparing ingot having reduced distortion at late body length |
US11408090B2 (en) | 2019-04-18 | 2022-08-09 | Globalwafers Co., Ltd. | Methods for growing a single crystal silicon ingot using continuous Czochralski method |
US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
US11111596B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
US11680336B2 (en) | 2019-09-13 | 2023-06-20 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
US11680335B2 (en) | 2019-09-13 | 2023-06-20 | Globalwafers Co., Ltd. | Single crystal silicon ingot having axial uniformity |
US11111597B2 (en) | 2019-09-13 | 2021-09-07 | Globalwafers Co., Ltd. | Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method |
US11795569B2 (en) | 2020-12-31 | 2023-10-24 | Globalwafers Co., Ltd. | Systems for producing a single crystal silicon ingot using a vaporized dopant |
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US20170260645A1 (en) | 2017-09-14 |
KR102312204B1 (ko) | 2021-10-14 |
CN106795647A (zh) | 2017-05-31 |
CN106795647B (zh) | 2020-02-07 |
DE112015003573B4 (de) | 2023-03-30 |
JP6222013B2 (ja) | 2017-11-01 |
JP2016050140A (ja) | 2016-04-11 |
US10400353B2 (en) | 2019-09-03 |
KR20170046135A (ko) | 2017-04-28 |
DE112015003573T5 (de) | 2017-04-20 |
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