WO2015182038A1 - Circuit d'excitation rc-igbt - Google Patents

Circuit d'excitation rc-igbt Download PDF

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Publication number
WO2015182038A1
WO2015182038A1 PCT/JP2015/002229 JP2015002229W WO2015182038A1 WO 2015182038 A1 WO2015182038 A1 WO 2015182038A1 JP 2015002229 W JP2015002229 W JP 2015002229W WO 2015182038 A1 WO2015182038 A1 WO 2015182038A1
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WO
WIPO (PCT)
Prior art keywords
switch circuit
circuit
gate
igbt
terminal
Prior art date
Application number
PCT/JP2015/002229
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English (en)
Japanese (ja)
Inventor
昌弘 山本
岩村　剛宏
Original Assignee
株式会社デンソー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Publication of WO2015182038A1 publication Critical patent/WO2015182038A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices

Abstract

La présente invention concerne un circuit d'excitation de RC-IGBT (transistor bipolaire à grille isolée à conduction inverse) qui est pourvu : d'une pluralité de circuits de commutation (SW2-SW6) connectés entre un quelconque élément parmi une borne de seconde grille (9), une borne d'émetteur (11), et des bornes de connexion de condensateur (13) ; et d'un circuit de commande (3). Lorsqu'un RC-IGBT est éteint, le circuit de commande commande les états de marche-d'arrêt de la pluralité de circuits de commutation et, en conséquence, forme un trajet de charge qui fait en sorte que la charge électrique qui charge un condensateur entre une seconde grille et un émetteur du RC-IGBT charge un élément capacitif, et forme par la suite un trajet d'application de tension négative qui connecte respectivement, à l'émetteur et à la seconde grille, une borne côté potentiel positif et une borne côté potentiel négatif de l'élément capacitif.
PCT/JP2015/002229 2014-05-27 2015-04-24 Circuit d'excitation rc-igbt WO2015182038A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-109055 2014-05-27
JP2014109055A JP6337615B2 (ja) 2014-05-27 2014-05-27 Ｒｃ−ｉｇｂｔ駆動回路

Publications (1)

Publication Number Publication Date
WO2015182038A1 true WO2015182038A1 (fr) 2015-12-03

Family

ID=54698400

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/002229 WO2015182038A1 (fr) 2014-05-27 2015-04-24 Circuit d'excitation rc-igbt

Country Status (2)

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JP (1) JP6337615B2 (fr)
WO (1) WO2015182038A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110036557A (zh) * 2017-06-13 2019-07-19 富士电机株式会社 驱动装置和电力转换装置
US10778216B2 (en) 2019-01-04 2020-09-15 Kabushiki Kaisha Toshiba Control circuit, semiconductor device, and electrical circuit device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102284188B1 (ko) * 2017-07-25 2021-08-02 한국전기연구원 SiC MOSFET용 게이트 구동회로
JP7352443B2 (ja) 2019-11-01 2023-09-28 株式会社東芝 半導体装置の制御方法
JP7319601B2 (ja) 2019-11-01 2023-08-02 株式会社東芝 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283676A (ja) * 1992-02-03 1993-10-29 Fuji Electric Co Ltd 半導体装置
JPH06350076A (ja) * 1993-06-14 1994-12-22 Toshiba Corp 半導体装置およびその駆動方法
JP2009021823A (ja) * 2007-07-12 2009-01-29 Hitachi Ltd 電圧駆動型半導体素子のドライブ回路及びインバータ装置
JP2013098415A (ja) * 2011-11-02 2013-05-20 Denso Corp 半導体装置
JP2014187479A (ja) * 2013-03-22 2014-10-02 Denso Corp 駆動回路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283676A (ja) * 1992-02-03 1993-10-29 Fuji Electric Co Ltd 半導体装置
JPH06350076A (ja) * 1993-06-14 1994-12-22 Toshiba Corp 半導体装置およびその駆動方法
JP2009021823A (ja) * 2007-07-12 2009-01-29 Hitachi Ltd 電圧駆動型半導体素子のドライブ回路及びインバータ装置
JP2013098415A (ja) * 2011-11-02 2013-05-20 Denso Corp 半導体装置
JP2014187479A (ja) * 2013-03-22 2014-10-02 Denso Corp 駆動回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110036557A (zh) * 2017-06-13 2019-07-19 富士电机株式会社 驱动装置和电力转换装置
CN110036557B (zh) * 2017-06-13 2021-07-13 富士电机株式会社 驱动装置和电力转换装置
US10778216B2 (en) 2019-01-04 2020-09-15 Kabushiki Kaisha Toshiba Control circuit, semiconductor device, and electrical circuit device

Also Published As

Publication number Publication date
JP6337615B2 (ja) 2018-06-06
JP2015226142A (ja) 2015-12-14

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