WO2015178346A1 - Feuille composite pour formation de film de protection - Google Patents

Feuille composite pour formation de film de protection Download PDF

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Publication number
WO2015178346A1
WO2015178346A1 PCT/JP2015/064202 JP2015064202W WO2015178346A1 WO 2015178346 A1 WO2015178346 A1 WO 2015178346A1 JP 2015064202 W JP2015064202 W JP 2015064202W WO 2015178346 A1 WO2015178346 A1 WO 2015178346A1
Authority
WO
WIPO (PCT)
Prior art keywords
protective film
forming
sheet
film
composite sheet
Prior art date
Application number
PCT/JP2015/064202
Other languages
English (en)
Japanese (ja)
Inventor
尚哉 佐伯
山本 大輔
裕之 米山
洋一 稲男
Original Assignee
リンテック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to JP2016521094A priority Critical patent/JP6319433B2/ja
Priority to KR1020167031951A priority patent/KR102378063B1/ko
Priority to SG11201609543VA priority patent/SG11201609543VA/en
Priority to CN201580025643.4A priority patent/CN106463373B/zh
Publication of WO2015178346A1 publication Critical patent/WO2015178346A1/fr
Priority to PH12016502286A priority patent/PH12016502286A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • a laminated pressure-sensitive adhesive sheet (two layers of pressure-sensitive adhesive sheets composed of a base material and a pressure-sensitive adhesive layer) is attached to an ultrathin semiconductor wafer, and the laminated pressure-sensitive adhesive sheet side is used. After irradiating the semiconductor wafer with laser light and forming a modified portion inside the semiconductor wafer, the adhesive sheet is expanded to divide the semiconductor wafer along the dicing line and produce semiconductor chips.
  • a stealth dicing method is disclosed.
  • the arithmetic mean roughness (Ra1) of the back surface of the base material 41 is the arithmetic mean roughness of the back surface of the base material 41 before heating at 130 ° C. for 2 hours, and is hereinafter referred to as “arithmetic average roughness before heating”. (Ra1) ".
  • the arithmetic average roughness (Ra1) before heating and the arithmetic average roughness (Ra2) after heating are measured based on JIS B0601: 2001, and the details of the measuring method are as shown in the test examples described later. is there.
  • the resin film constituting the substrate 41 include polyethylene films such as low density polyethylene (LDPE) film, linear low density polyethylene (LLDPE) film, and high density polyethylene (HDPE) film, polypropylene film, and ethylene-propylene.
  • polyethylene films such as low density polyethylene (LDPE) film, linear low density polyethylene (LLDPE) film, and high density polyethylene (HDPE) film, polypropylene film, and ethylene-propylene.
  • the functional group-containing monomer examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate. These are used alone or in combination of two or more.
  • the energy ray-curable monomer and / or oligomer (B) for example, an ester of a polyhydric alcohol and (meth) acrylic acid or the like can be used.
  • the polymer component having no energy beam curability for example, the same components as those of the acrylic copolymer (a1) described above can be used.
  • the content of the polymer component having no energy beam curability in the energy beam curable resin composition is preferably 20 to 99.9% by mass with respect to the total mass of the energy beam curable resin composition, In particular, it is preferably 30 to 80% by mass.
  • a jig pressure-sensitive adhesive layer 5 as shown in FIG. 1 is provided on the peripheral edge of the protective film forming film 1 on the side opposite to the base material 41 (support sheet 4). It is preferred that
  • a release sheet (SP-PET 381031 manufactured by Lintec Co., Ltd.) with a silicone release agent layer formed on one side of a 38 ⁇ m thick PET film, and use the adhesive layer on the release surface of the release sheet.
  • the coating agent was applied with a knife coater so that the finally obtained pressure-sensitive adhesive layer had a thickness of 10 ⁇ m, and dried to form a pressure-sensitive adhesive layer. Thereafter, the corona-treated surface of the base material described above is overlapped on the pressure-sensitive adhesive layer and bonded together, and a support sheet (base material 41 in FIG. 3) and a pressure-sensitive adhesive layer (pressure-sensitive adhesive layer 42 in FIG.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laser Beam Processing (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne une feuille composite (3) destinée à former un film de protection, qui comporte : une feuille de support (4) ; et un film de formation de film de protection (1) qui est stratifié sur une première surface de la feuille de support (4). Une seconde surface de la feuille de support (4) présente une rugosité moyenne arithmétique (Ra1) de 0,2 µm ou plus, et la seconde surface de la feuille de support (4) présente une rugosité moyenne arithmétique (Ra2) de 0,25 µm ou moins après avoir été chauffée à 130 °C pendant 2 heures.
PCT/JP2015/064202 2014-05-23 2015-05-18 Feuille composite pour formation de film de protection WO2015178346A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016521094A JP6319433B2 (ja) 2014-05-23 2015-05-18 保護膜形成用複合シート
KR1020167031951A KR102378063B1 (ko) 2014-05-23 2015-05-18 보호막 형성용 복합 시트
SG11201609543VA SG11201609543VA (en) 2014-05-23 2015-05-18 Composite sheet for forming protective film
CN201580025643.4A CN106463373B (zh) 2014-05-23 2015-05-18 保护膜形成用复合片
PH12016502286A PH12016502286A1 (en) 2014-05-23 2016-11-16 Composite sheet for forming protective film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-106757 2014-05-23
JP2014106757 2014-05-23

Publications (1)

Publication Number Publication Date
WO2015178346A1 true WO2015178346A1 (fr) 2015-11-26

Family

ID=54554016

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/064202 WO2015178346A1 (fr) 2014-05-23 2015-05-18 Feuille composite pour formation de film de protection

Country Status (7)

Country Link
JP (1) JP6319433B2 (fr)
KR (1) KR102378063B1 (fr)
CN (1) CN106463373B (fr)
PH (1) PH12016502286A1 (fr)
SG (1) SG11201609543VA (fr)
TW (2) TWI741336B (fr)
WO (1) WO2015178346A1 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017145938A1 (fr) * 2016-02-22 2017-08-31 リンテック株式会社 Feuille de formation de film protecteur, procédé de fabrication de feuille de formation de film protecteur et procédé de fabrication de dispositif à semi-conducteur
WO2017163971A1 (fr) * 2016-03-24 2017-09-28 リンテック株式会社 Feuille de support et feuille composite pour une formation de film de protection
WO2017188200A1 (fr) * 2016-04-28 2017-11-02 リンテック株式会社 Film pour former un film de protection et feuille composite pour former un film de protection
WO2017188196A1 (fr) * 2016-04-28 2017-11-02 リンテック株式会社 Film pour former un film de protection et feuille composite pour former un film de protection
JP6298226B1 (ja) * 2017-03-30 2018-03-20 リンテック株式会社 保護膜形成用複合シート
CN108243616A (zh) * 2016-03-04 2018-07-03 琳得科株式会社 半导体加工用片
CN108541338A (zh) * 2016-03-02 2018-09-14 古河电气工业株式会社 晶片加工用带
WO2018179475A1 (fr) * 2017-03-30 2018-10-04 リンテック株式会社 Feuille composite de formation de film de protection
JP2019079961A (ja) * 2017-10-25 2019-05-23 リンテック株式会社 半導体加工用シート
KR20190111915A (ko) * 2017-02-02 2019-10-02 히타치가세이가부시끼가이샤 전자 부품의 제조 방법, 가보호용 수지 조성물 및 가보호용 수지 필름
WO2019203021A1 (fr) * 2018-04-18 2019-10-24 リンテック株式会社 Feuille de traitement de pièce à usiner
WO2021130823A1 (fr) * 2019-12-23 2021-07-01 昭和電工マテリアルズ株式会社 Film intégré de découpage en dés/collage de puces, procédé de gestion de qualité associé et procédé de fabrication de dispositif à semi-conducteur
KR20220113548A (ko) * 2016-04-28 2022-08-12 린텍 가부시키가이샤 보호막 형성용 필름 및 보호막 형성용 복합 시트
KR20220136089A (ko) 2021-03-31 2022-10-07 린텍 가부시키가이샤 지지 시트, 수지막 형성용 복합 시트, 키트, 및 수지막이 형성된 칩의 제조 방법
KR20230139763A (ko) 2022-03-28 2023-10-05 린텍 가부시키가이샤 수지막 형성용 복합 시트, 키트, 및 수지막이 형성된 워크 가공물의 제조 방법

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CN106463373B (zh) * 2014-05-23 2020-01-03 琳得科株式会社 保护膜形成用复合片

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JP2006140348A (ja) * 2004-11-12 2006-06-01 Lintec Corp マーキング方法および保護膜形成兼ダイシング用シート
JP2011040449A (ja) * 2009-08-07 2011-02-24 Du Pont Mitsui Polychem Co Ltd ダイシングテープ用基材、ダイシングテープ、半導体装置の製造方法
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WO2017145938A1 (fr) * 2016-02-22 2017-08-31 リンテック株式会社 Feuille de formation de film protecteur, procédé de fabrication de feuille de formation de film protecteur et procédé de fabrication de dispositif à semi-conducteur
CN108701641A (zh) * 2016-02-22 2018-10-23 琳得科株式会社 保护膜形成用片、保护膜形成用片的制造方法及半导体装置的制造方法
TWI758276B (zh) * 2016-02-22 2022-03-21 日商琳得科股份有限公司 保護膜形成用片、保護膜形成用片的製造方法及半導體裝置的製造方法
KR20180118628A (ko) * 2016-02-22 2018-10-31 린텍 가부시키가이샤 보호막 형성용 시트, 보호막 형성용 시트의 제조 방법 및 반도체 장치의 제조 방법
KR102637275B1 (ko) * 2016-02-22 2024-02-15 린텍 가부시키가이샤 보호막 형성용 시트, 보호막 형성용 시트의 제조 방법 및 반도체 장치의 제조 방법
JPWO2017145938A1 (ja) * 2016-02-22 2018-12-13 リンテック株式会社 保護膜形成用シート、保護膜形成用シートの製造方法及び半導体装置の製造方法
CN108701641B (zh) * 2016-02-22 2023-03-28 琳得科株式会社 保护膜形成用片、保护膜形成用片的制造方法及半导体装置的制造方法
CN108541338A (zh) * 2016-03-02 2018-09-14 古河电气工业株式会社 晶片加工用带
CN108243616A (zh) * 2016-03-04 2018-07-03 琳得科株式会社 半导体加工用片
CN108966671B (zh) * 2016-03-24 2023-09-26 琳得科株式会社 支撑片及保护膜形成用复合片
WO2017163971A1 (fr) * 2016-03-24 2017-09-28 リンテック株式会社 Feuille de support et feuille composite pour une formation de film de protection
KR102313074B1 (ko) * 2016-03-24 2021-10-14 린텍 가부시키가이샤 지지 시트 및 보호막 형성용 복합 시트
KR20180124868A (ko) * 2016-03-24 2018-11-21 린텍 가부시키가이샤 지지 시트 및 보호막 형성용 복합 시트
CN108966671A (zh) * 2016-03-24 2018-12-07 琳得科株式会社 支撑片及保护膜形成用复合片
JPWO2017163971A1 (ja) * 2016-03-24 2019-01-31 リンテック株式会社 支持シート及び保護膜形成用複合シート
JPWO2017188196A1 (ja) * 2016-04-28 2018-08-30 リンテック株式会社 保護膜形成用フィルム及び保護膜形成用複合シート
CN108966656A (zh) * 2016-04-28 2018-12-07 琳得科株式会社 保护膜形成用膜以及保护膜形成用复合片
CN108604541A (zh) * 2016-04-28 2018-09-28 琳得科株式会社 保护膜形成用膜及保护膜形成用复合片
KR102577856B1 (ko) 2016-04-28 2023-09-12 린텍 가부시키가이샤 보호막 형성용 필름 및 보호막 형성용 복합 시트
KR20220113548A (ko) * 2016-04-28 2022-08-12 린텍 가부시키가이샤 보호막 형성용 필름 및 보호막 형성용 복합 시트
CN108604541B (zh) * 2016-04-28 2022-10-14 琳得科株式会社 保护膜形成用膜及保护膜形成用复合片
WO2017188196A1 (fr) * 2016-04-28 2017-11-02 リンテック株式会社 Film pour former un film de protection et feuille composite pour former un film de protection
WO2017188200A1 (fr) * 2016-04-28 2017-11-02 リンテック株式会社 Film pour former un film de protection et feuille composite pour former un film de protection
KR20190111915A (ko) * 2017-02-02 2019-10-02 히타치가세이가부시끼가이샤 전자 부품의 제조 방법, 가보호용 수지 조성물 및 가보호용 수지 필름
JPWO2018143014A1 (ja) * 2017-02-02 2019-11-21 日立化成株式会社 電子部品の製造方法、仮保護用樹脂組成物及び仮保護用樹脂フィルム
KR102494902B1 (ko) 2017-02-02 2023-02-01 쇼와덴코머티리얼즈가부시끼가이샤 전자 부품의 제조 방법, 가보호용 수지 조성물 및 가보호용 수지 필름
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JP6298226B1 (ja) * 2017-03-30 2018-03-20 リンテック株式会社 保護膜形成用複合シート
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JPWO2019203021A1 (ja) * 2018-04-18 2021-06-10 リンテック株式会社 ワーク加工用シート
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TWI797309B (zh) * 2018-04-18 2023-04-01 日商琳得科股份有限公司 雷射刻印方法及工件加工用片材
JP7325403B2 (ja) 2018-04-18 2023-08-14 リンテック株式会社 ワーク加工用シート
WO2019203021A1 (fr) * 2018-04-18 2019-10-24 リンテック株式会社 Feuille de traitement de pièce à usiner
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JP7435624B2 (ja) 2019-12-23 2024-02-21 株式会社レゾナック ダイシング・ダイボンディング一体型フィルム及びその品質管理方法、並びに半導体装置の製造方法
KR20220136089A (ko) 2021-03-31 2022-10-07 린텍 가부시키가이샤 지지 시트, 수지막 형성용 복합 시트, 키트, 및 수지막이 형성된 칩의 제조 방법
KR20230139763A (ko) 2022-03-28 2023-10-05 린텍 가부시키가이샤 수지막 형성용 복합 시트, 키트, 및 수지막이 형성된 워크 가공물의 제조 방법

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TW201602303A (zh) 2016-01-16
TW201940624A (zh) 2019-10-16
SG11201609543VA (en) 2016-12-29
KR20170008749A (ko) 2017-01-24
JP6319433B2 (ja) 2018-05-09
TWI675900B (zh) 2019-11-01
TWI741336B (zh) 2021-10-01
JPWO2015178346A1 (ja) 2017-04-20
KR102378063B1 (ko) 2022-03-23
PH12016502286A1 (en) 2017-02-13
CN106463373A (zh) 2017-02-22

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