WO2015165198A1 - 一种连续精馏纯化六氟化钨的方法及装置 - Google Patents

一种连续精馏纯化六氟化钨的方法及装置 Download PDF

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Publication number
WO2015165198A1
WO2015165198A1 PCT/CN2014/087178 CN2014087178W WO2015165198A1 WO 2015165198 A1 WO2015165198 A1 WO 2015165198A1 CN 2014087178 W CN2014087178 W CN 2014087178W WO 2015165198 A1 WO2015165198 A1 WO 2015165198A1
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Prior art keywords
tower
weighting
lighting
column
rectification
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PCT/CN2014/087178
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English (en)
French (fr)
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柳彤
王占卫
张长金
李翔宇
郑秋艳
董云海
冀延治
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邯郸净化设备研究所
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Priority to KR1020167032917A priority Critical patent/KR101899030B1/ko
Publication of WO2015165198A1 publication Critical patent/WO2015165198A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C01G41/04—Halides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D17/00—Separation of liquids, not provided for elsewhere, e.g. by thermal diffusion
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity

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  • the invention relates to the technical field of fine chemicals, in particular to a method and a device for continuously rectifying and purifying tungsten hexafluoride.
  • Tungsten hexafluoride is a widely used gas. It is mainly used in the electronics industry as a raw material for metal tungsten chemical vapor deposition (CVD). Tungsten deposited by CVD has low resistivity and electricity. High resistance to migration and excellent flatness when filling small through holes. A composite coating of tungsten and tantalum is produced by a mixed metal CVD process, which can be used for the fabrication of X-ray emitter electrodes and solar absorbers. In addition, WF 6 is also used as a raw material for semiconductor electrodes and conductive pastes in the electronics industry. The above applications require high purity of tungsten hexafluoride to ensure the stability and reliability of products produced from tungsten hexafluoride. Sex.
  • the existing purification of tungsten hexafluoride mainly includes a bubble method, a condensing vacuum method, and a batch distillation.
  • the bubbling method is to pass a high-purity inert gas such as helium gas when the tungsten hexafluoride is a liquid, and to separate the magazine from the tungsten hexafluoride by entrainment of an inert gas, and then remove impurities by evacuation, bubbling method.
  • Ultra-high purity tungsten hexafluoride products can be obtained, but this method requires a large amount of high-purity helium gas in the production process, and the production cost is high.
  • the condensing vacuum method condenses the tungsten hexafluoride at a low temperature, and the condensed tungsten hexafluoride liquid is solidified at 0 ° C while vacuuming to remove the gas phase impurities; and then the tungsten hexafluoride is heated in a closed container under pressure.
  • the gas dissolved in the liquid tungsten hexafluoride is overflowed due to the decrease in solubility, and the non-volatile impurities are removed by gas phase depressurization under controlled conditions, and volatile impurities such as HF, SF 6 and CF 4 are removed, and finally N 2 and Ar are removed.
  • the volatile impurities are dissolved in the liquid tungsten hexafluoride.
  • the method is simple in process and low in production cost, but it is difficult to produce high-purity products.
  • the batch rectification method performs the rectification operation of the tungsten hexafluoride to be purified in batches, and the method can overcome the defects of the above two methods, and can obtain a high-purity product, but the production efficiency is low, resulting in high cost and difficulty in large-scale industrial production. Application.
  • the object of the present invention is to provide a method and a device for continuously rectifying and purifying tungsten hexafluoride.
  • the tungsten hexafluoride obtained by the method provided by the invention has high purity, and the method has high production efficiency and low efficiency. Production costs.
  • a device for continuously rectifying and purifying tungsten hexafluoride comprising a first fluid transport device 1;
  • the top of the de-lighting tower 3 is provided with a first vacuuming port 4;
  • the bottom end of the de-lighting tower 3 is provided with a first analysis port F1;
  • a second fluid delivery device 18 having a feed port connected to the first analysis port F1;
  • a de-weighting tower 11 connected to the discharge port of the second fluid conveying device 18;
  • the top of the de-weighting tower 11 is provided with a second vacuuming port 12 and a second analysis port F2.
  • the de-lighting column 3 and the de-weighting column 11 are independently selected from the group consisting of a packed rectification column and a plate rectification column.
  • the de-lighting tower 3 is a plate type rectification column, the de-lighting tower 3 has a number of trays of 20-80;
  • the de-weighting column 11 is a plate type rectification column, and the number of theoretical plates of the de-weighting column 11 is 20-80.
  • the de-lighting tower 3 has a height of 0.5 m-15 m and a diameter of 0.1 m-3 m;
  • the de-weighting tower 11 has a height of 0.5 m to 15 m and a diameter of 0.1 m to 3 m.
  • the de-lighting column 3 and the de-weighting column 11 are packed rectification columns, and the packings in the de-lighting column 3 and the de-weighting column 11 are independently selected from the ⁇ -ring, Bauer Ring and Raschig ring;
  • the filler has a diameter of from 1 mm to 100 mm.
  • a method of continuously rectifying and purifying tungsten hexafluoride comprising the steps of:
  • the tungsten hexafluoride to be purified is sent to the de-lighting tower 3, and the rectification is carried out under the conditions of a temperature of 3 ° C to 50 ° C and a pressure of -0.03 MPa to 0.2 MPa, and the light impurities are in the detachment.
  • the top of the light tower is taken out;
  • the temperature of the tungsten hexafluoride to be purified is from 3 ° C to 50 ° C;
  • the flow rate of the tungsten hexafluoride to be purified is from 10 kg/h to 1000 kg/h.
  • the rectification temperature in the de-lighting tower 3 is 5 ° C - 25 ° C;
  • the rectification pressure in the de-lighting tower 3 is -0.01 MPa to 0.1 MPa.
  • the rectification temperature in the de-weighting column 11 is 10 ° C - 30 ° C;
  • the rectification pressure in the de-heavy column 11 is -0.01 MPa to 0.1 MPa.
  • the de-lighting column has a reflux ratio of 1-500;
  • the reflux ratio of the de-weighting column is 0.1-10.
  • the present invention provides a device for continuously rectifying and purifying tungsten hexafluoride, comprising a first fluid transport device 1; a de-lighting tower 3 having a feed port communicating with a discharge port of the first fluid transport device 1;
  • the top of the stripping tower 3 is provided with a first vacuum port 4;
  • the bottom end of the stripping tower is provided with a first analysis port F1;
  • the second fluid conveying device of the inlet port is connected to the first analysis port F1 18;
  • a de-weighting tower 11 connected to the discharge port of the second fluid conveying device 18;
  • a top portion of the de-weighting tower 11 is provided with a second vacuuming port 12 and a second analysis port F2.
  • the apparatus provided by the invention comprises a de-lighting tower 3 and a de-weighting tower 11, first conveying the tungsten hexafluoride to be purified to the de-lighting tower 3 for rectification; and then conveying the product at the bottom of the de-lighting tower 3 to the de-weighting tower The rectification is carried out, and then the purified tungsten hexafluoride is collected at the top of the de-weighting column 11.
  • the method provided by the invention controls the conditions of the de-lighting column rectification and the de-removing column rectification, And the time for transporting the bottom product of the de-light tower to the de-weighting tower, and collecting the purified tungsten hexafluoride from the top of the de-weighting tower to complete the purification of the tungsten hexafluoride.
  • the tungsten hexafluoride obtained by the method provided by the invention has high purity and can reach 99.9999%, and the method provided by the invention has simple operation, high production efficiency and greatly reduces production cost.
  • FIG. 1 is a schematic structural view of a continuous rectification and purification device of tungsten hexafluoride according to an embodiment of the present invention
  • Example 2 is a gas chromatographic analysis chart of the bottom product of the de-lighting tower obtained in Example 1 of the present invention
  • Example 3 is a gas chromatographic analysis chart of the top product of the de-weighting column obtained in Example 1 of the present invention
  • Example 4 is a gas chromatographic analysis chart of the bottom product of the de-lighting tower obtained in Example 2 of the present invention.
  • Figure 5 is a gas chromatographic analysis chart of the top product of the de-weighting column obtained in Example 2 of the present invention.
  • Example 6 is a gas chromatographic analysis chart of the bottom product of the de-lighting tower obtained in Example 3 of the present invention.
  • Figure 7 is a gas chromatographic analysis spectrum of the top product of the de-weighting column obtained in Example 3 of the present invention.
  • Figure 8 is a gas chromatographic analysis chart of the bottom product of the de-lighting tower obtained in Example 4 of the present invention.
  • Figure 9 is a gas chromatographic analysis chart of the top product of the de-weighting column obtained in Example 4 of the present invention.
  • Figure 10 is a gas chromatographic analysis of the bottom product of the de-lighting column obtained in Example 5 of the present invention.
  • Figure 11 is a gas chromatographic analysis of the top product of the de-weighting column obtained in Example 5 of the present invention.
  • the present invention provides a continuous rectification purification device for tungsten hexafluoride, comprising a first fluid delivery device 1;
  • the top of the de-lighting tower 3 is provided with a first vacuuming port 4;
  • the bottom end of the de-lighting tower 3 is provided with a first analysis port F1;
  • a second fluid delivery device 18 having a feed port connected to the first analysis port F1;
  • a de-weighting tower 11 connected to the discharge port of the second fluid conveying device 18;
  • the top of the de-weighting tower 11 is provided with a second vacuuming port 12 and a second analysis port F2.
  • the tungsten hexafluoride material to be purified is first rectified in the delighting tower 3, and the light impurities in the tungsten hexafluoride are removed from the light tower 3
  • the top outlet collects to remove most of the light impurities in the tungsten hexafluoride; the product at the bottom of the de-lighting tower 3 is sent to the de-weighting tower 11 for rectification, and the heavy impurities in the tungsten hexafluoride remain in the de-weighting tower.
  • tungsten hexafluoride is collected from the outlet at the top of the de-weighting tower 11.
  • the device provided by the invention sequentially removes the tungsten hexafluoride material through the de-lighting column rectification and de-condensing column rectification, removes light impurities and heavy impurities in the tungsten hexafluoride, and improves the obtained tungsten hexafluoride. Purity; and the device provided by the invention shortens the purification process of tungsten hexafluoride and improves production efficiency.
  • FIG. 1 is a diagram of continuous rectification and purification of tungsten hexafluoride provided by an embodiment of the present invention.
  • Schematic diagram of the structure wherein 1 is the first fluid transfer pump, 2 is the first reboiler, 3 is the de-light tower, 4 is the first vacuum port, 5 is the first condenser, and 6 is the first outlet 7 is the first return line, 8 is the second fluid transfer pump, 9 is the first line, 10 is the second reboiler, 11 is the de-weighting tower, 12 is the second vacuuming port, 13 is the second Condenser, 14 is the second outlet, 15 is the return line, 16 is the second line, 17 is the third outlet, F1 is the first analysis port, F2 is the second analysis port; in the above structure diagram, the second The fluid transfer pump 8 and the first line 9 constitute a second fluid delivery device 18.
  • the apparatus provided by the present invention comprises a first fluid transporting device 1 for transporting tungsten hexafluoride to be purified into the de-lighting tower 3 for rectification.
  • the present invention is not particularly limited in the composition and structure of the first fluid transport device 1, and may be a fluid transport device well known to those skilled in the art.
  • a fluid transfer pump may be used, and the corresponding first fluid transport device is first. Fluid transfer pump.
  • a valve may be provided between the first fluid delivery device and the de-lighting tower.
  • the device provided by the present invention comprises a de-lighting tower 3, and the side wall of the de-lighting tower 3 is provided with a feeding port, the feeding port of the de-lighting tower 3 and the discharging of the first fluid conveying device 1 The mouth is connected.
  • the tungsten hexafluoride to be purified is subjected to rectification, wherein the light impurities are separated to the top of the de-lighting tower, and the tungsten hexafluoride and the heavy impurities are separated into the de-lighting tower 3
  • light impurities are collected at the top of the de-lighting tower 3 to separate most of the light impurities from the tungsten hexafluoride material.
  • the present invention has no particular limitation on the position at which the feed port is disposed on the side wall of the light-removing tower 3, and those skilled in the art can set the feed port at a suitable position on the side wall of the light-removing tower 3 according to the actual production requirements.
  • the center of the side wall of the de-lighting tower 3 is provided with a feeding port.
  • the de-lighting tower 3 may be a packed rectification column or a plate type fine
  • the distillation column is preferably a packed rectification column; in the present invention, when the de-lighting column 3 is a packed rectification column, the filler in the de-lighting column 3 may be selected from the group consisting of a ⁇ ring, a Pall ring or a Lacy.
  • the material is ⁇ ring; the material of the filler may be polytetrafluoroethylene, stainless steel, nickel or Monel, preferably stainless steel; the filler may have a diameter of 1 mm to 100 mm, and may also be 10 mm to 50 mm, in the present invention.
  • the diameter of the filler may be specifically 1 mm, 5 mm, 10 mm, 30 mm, 50 mm, 60 mm, 70 mm, 80 mm, 90 mm or 100 mm;
  • the number of trays of the de-lighting tower 3 may be 20 to 80, and may be 30 to 50. In the embodiment of the present invention, The number of trays of the light tower 3 can be specifically 20, 30, 40, 50, 80;
  • the material of the de-lighting tower 3 may be stainless steel, nickel or Monel, preferably stainless steel; the height of the de-lighting tower 3 may be 0.5m to 15m, and may also be 3m ⁇ 8m, in the embodiment of the present invention, the height of the de-lighting tower 3 may be specifically 0.5m, 3m, 5m, 8m, 10m, 12m or 15m; the diameter of the de-lighting tower 3 may be 0.1m ⁇ 3m In the embodiment of the present invention, the diameter of the de-lighting tower 3 may be specifically 0.1 m, 0.5 m, 1 m, 1.5 m, 2 m, and may be 0.1 m to 2 m. 2.5m or 3m.
  • the bottom end of the de-lighting tower 3 is provided with a first analysis port F1, and the first analysis port is connected to a feed port of the gas chromatograph for collecting products separated from the bottom of the light tower 3, Gas chromatography is performed to determine the time of rectification based on the results of gas chromatography.
  • the first analysis port F1 is further connected to the feed port of the first reboiler 2 for heating and evaporating the product outputted from the bottom of the de-lighting tower 3; the first reboiler The discharge port of 2 is connected to the return port at the bottom of the side wall of the de-lighting tower 3, and is used for conveying the material heated by the first reboiler 2 back to the light-removing tower 3, which is a rectification process in the de-lighting tower 3. Provide heat.
  • the top of the de-lighting tower 3 is provided with a first vacuuming port 4 for evacuating the de-lighting tower 3 and the pipeline connected to the de-lighting tower 3 to reach a rectification station.
  • the first vacuum port 4 is also connected to the feed port of the first condenser 5, and the discharge port of the first condenser 5 is connected to the first outlet 6 for The light impurities are discharged; the discharge port of the first condenser 5 is also connected to the feed port of the first return line 7, the discharge port of the first return line 7 and the stripping tower 3 side
  • a light impurity return port is connected to the wall, and the light impurity return port is provided at the top of the side wall of the de-lighting tower 3 for refluxing the remaining portion of the light impurities into the de-lighting tower 3.
  • a valve may be provided on the line between the first condenser 5 and the de-lighting tower 3.
  • the first analysis port F1 is further connected to the feed port of the second fluid delivery device 18 for conveying the product at the bottom of the de-lighting tower 3 to the de-weighting column 11 for rectification. Further purification of tungsten hexafluoride is carried out.
  • the second fluid delivery device 18 may specifically include a first conduit 9 and a second fluid delivery pump 8, a feed port of the first conduit 9 and the first analysis port. F1 is connected, the discharge port of the first pipe 9 is connected to the feed port of the second fluid transfer pump 8, the discharge port of the second fluid pump 8 and the feed of the de-weighting tower 11 The mouth is connected.
  • the feed port of the de-weighting tower 11 may be disposed on the side wall of the de-weighting tower 11, and the present invention has no particular limitation on the position of the feeding port of the de-weighting tower 11 on the side wall.
  • a person skilled in the art can set a suitable position of the feed port according to the actual production requirements; in the embodiment of the invention, the feed port of the de-weighting tower 11 is disposed at the middle of the side wall of the de-weighting tower 11 .
  • a valve in order to control the delivery of the bottom product of the de-lighting column 3 to the de-weighting column 11, a valve may be provided between the first analysis port F1 and the second fluid delivery device 18. door. Specifically, a valve may be disposed on the pipeline between the first analysis port F1 and the second fluid transfer pump 8, and a valve may be disposed on the pipeline between the second fluid transfer pump 8 and the de-weighting tower 11.
  • the de-weighting column 11 may be a packed rectification column or a plate rectification column, preferably a packed rectification column; in the present invention, when the de-weighting column 11 is a packed rectification column
  • the filler in the de-weighting tower 11 may be selected from the group consisting of a ⁇ ring, a Pall ring or a Lacy ring, preferably a ⁇ ring; the material of the filler may be polytetrafluoroethylene, stainless steel, nickel or monel, preferably
  • the diameter of the filler may be 1 mm to 100 mm, and may also be 10 mm to 50 mm. In the embodiment of the present invention, the diameter of the filler may be specifically 1 mm, 5 mm, 10 mm, 30 mm, 50 mm, 60 mm, 70 mm, 80mm, 90mm or 100mm;
  • the number of trays of the de-weighting tower 11 when the de-weighting tower 11 is a plate type de-weighting tower, the number of trays of the de-weighting tower 11 may be 20 to 80, and may be 30 to 50. In the embodiment of the present invention, The number of trays of the de-weighting tower 11 may be specifically 20, 30, 40, 50, 80;
  • the material of the de-weighting tower 11 may be stainless steel, nickel or Monel, preferably stainless steel; the height of the de-weighting tower 11 may be 0.5m-15m, and may also be 3m ⁇ 8m, in the embodiment of the present invention, the height of the de-weighting tower 11 may be specifically 0.5m, 3m, 5m, 8m, 10m, 12m or 15m; the diameter of the de-weighting tower 11 may be 0.1m ⁇ 3m In the embodiment of the present invention, the diameter of the de-weighting tower 11 may be specifically 0.1 m, 0.5 m, 1 m, 1.5 m, 2 m, and may be 0.1 m to 2 m. 2.5m or 3m.
  • the product at the bottom of the de-lighting tower 3 is sent to the de-weighting tower through the second fluid transport device 18, and further rectification is carried out to separate heavy impurities in the tungsten hexafluoride, thereby realizing continuous rectification of tungsten hexafluoride. Purification.
  • the top of the de-weighting tower 11 is provided with a second vacuuming port 12 and a second analysis port F2.
  • the second vacuuming port 12 and the second analysis port F2 may be off.
  • An additional opening is shared in the heavy tower 11; the second vacuuming port 12 is used for evacuating the de-weighting tower 11 and the pipeline connected to the de-weighting tower 11 to achieve the rectification of the de-weighting tower 11 pressure.
  • the second analysis port F2 is connected to the feed port of the gas chromatograph for detecting the product at the top of the de-heavy column 11, thereby setting the time for rectification in the de-heavy column 11.
  • the second analysis port F2 is also connected to the feed port of the second condenser 13, and the discharge port of the second condenser 13 is connected to the second outlet 14 for collection and purification.
  • the discharge port of the second condenser 13 is also connected to the feed port of the second return line 15, the discharge port of the second return line and the de-weighting tower 11 a return port on the side wall is connected, and the return port is disposed at the top of the side wall of the de-lighting tower for refluxing the remaining portion of the purified tungsten hexafluoride to the de-weighting column 11 as the de-weighting tower 11
  • the rectification process provides refrigeration.
  • a valve may be provided on the line between the second condenser 13 and the de-heavy column 11.
  • the bottom of the de-weighting column 11 is further provided with an outlet for discharging heavy impurities separated by rectification.
  • the outlet at the bottom of the de-weighting column 11 is connected to a third outlet for discharging the product at the bottom of the de-weighting column 11.
  • the outlet of the bottom of the de-weighting tower 11 is also connected to the inlet of the second reboiler 10.
  • the outlet of the bottom of the de-weighting tower 11 can be connected through the second conduit 16 and The feed port of the second reboiler 10 is for heating the product output from the bottom of the de-heavy column 11 and refluxing it to the de-weighting column 11.
  • a valve may be provided on the line between the bottom outlet of the de-weighting column 11 and the third outlet 17.
  • the above device provided by the present invention can be used for the purification of tungsten hexafluoride.
  • the present invention provides a method for continuously rectifying and purifying tungsten hexafluoride, comprising the following steps:
  • the de-lighting tower 3, the pipeline connected to the de-lighting tower 3, the de-weighting tower 11 and the pipeline connected to the de-weighting tower 11 are evacuated;
  • the tungsten hexafluoride to be purified is sent to the de-lighting tower 3, and rectification is carried out under the conditions of a temperature of 3 ° C to 50 ° C and a pressure of -0.03 MPa to 0.2 MPa, and light impurities are in the de-lighting tower 3
  • the top is taken out;
  • the product at the bottom of the de-lighting tower 3 is analyzed, and the mass content of N 2 in the light impurities is ⁇ 1.0 ⁇ 10 -7 , the mass content of O 2 is ⁇ 1.0 ⁇ 10 -7 , and the mass content of CO is ⁇ 5 ⁇ 10.
  • the product at the top of the de-weighting tower 11 is analyzed, and after the mass content of the light impurity MoF 6 is ⁇ 5 ⁇ 10 -8 , the purified hexafluoride is outputted at the top of the de-weighting tower 11 Tungsten.
  • the pipeline connected to the de-lighting tower 3, the de-weighting tower 11 and the de-weighting is evacuated. Specifically, the degassing tower 3 and the pipeline connected to the de-lighting tower 3 are evacuated through the first vacuuming port 4, and the second vacuuming port is passed through the second vacuuming port. 12 pairs of the de-weighting tower 11 and the optical path connected to the de-weighting tower 11 are evacuated.
  • the present invention preferably draws a vacuum to -0.1 MPa.
  • the invention After the evacuation of the de-lighting tower 3, the pipeline connected to the de-lighting tower 3, the de-weighting tower 11 and the pipeline connected to the de-weighting tower 11, the invention will lose the tungsten hexafluoride to be purified.
  • the mixture is sent to the de-lighting tower 3, and rectification is carried out under the conditions of a temperature of 3 to 50 ° C and a pressure of -0.03 MPa to 0.2 MPa, and light impurities are collected at the top of the de-lighting tower 3.
  • the tungsten hexafluoride to be purified is sent to the de-lighting tower 3 through the first fluid transport device 1 for rectification.
  • the purity of the tungsten hexafluoride to be purified is preferably from 99% to 99.99%.
  • the tungsten hexafluoride to be purified is preferably transported to the de-lighting tower 3 at a temperature of from 4 ° C to 16 ° C, more preferably from 5 ° C to 15 ° C, most preferably from 8 ° C to 12 ° C;
  • the flow rate of the tungsten hexafluoride to be purified is preferably from 100 kg/h to 500 kg/h, more preferably from 150 kg/h to 450 kg/h, and most preferably from 200 kg/h to 400 kg/h.
  • the temperature of the rectification in the de-lighting column 3 is preferably 5 ° C to 25 ° C, more preferably 10 ° C to 20 ° C, and most preferably 12 ° C to 18 ° C;
  • the pressure of the rectification in 3 is preferably -0.01 MPa to 0.1 MPa, more preferably -0.01 MPa to 0.03 MPa; and
  • the reflux ratio of the de-lighting column 3 is preferably 1 to 500, more preferably 5 to 200, most preferably 5 to 30.
  • the light impurities in the tungsten hexafluoride to be purified are separated to the top of the de-lighting tower 3, and the tungsten hexafluoride and heavy impurities are separated into the de-lighting tower. bottom of.
  • the light impurities include HF, CO, N 2 , O 2 , CF 4 , SF 6 and CO 2 .
  • the product at the top of the de-lighting tower is collected by the first outlet 6 after passing through the first condenser 5.
  • the flow rate of collecting the light impurities is preferably from 1 kg/h to 50 kg/h, more preferably 3 kg. /h ⁇ 25kg/h.
  • the present invention preferably returns the remaining portion of the light impurities to the de-lighting tower 3 through the first return line 7 described in the above technical solution.
  • the ratio of the reflux to the de-lighting tower 3 is determined by the reflux ratio of the de-lighting tower 3, and those skilled in the art can select an appropriate reflux ratio according to the actual production requirements.
  • the product at the bottom of the de-lighting tower 3 is analyzed, and the mass content of N 2 in the light impurities is ⁇ 1.0 ⁇ 10 -7 , and the mass content of O 2 is ⁇ 1.0 ⁇ 10 -7 , CO mass content ⁇ 5 ⁇ 10 -8 , CO 2 mass content ⁇ 5 ⁇ 10 -8 , SF 6 mass content ⁇ 5 ⁇ 10 -8 , SiF 4 mass content ⁇ 5 ⁇ 10 -8
  • the mass content of CF 4 is ⁇ 5 ⁇ 10 -8
  • the mass content of N 2 O is ⁇ 5 ⁇ 10 -8
  • the mass content of HF is ⁇ 5 ⁇ 10 -7
  • the product at the bottom of the de-lighting tower 3 is transported to In the de-weighting column, rectification is carried out under the conditions of a temperature of 3 to 50 ° C and a pressure of -0.03 MPa to 0.2 MPa.
  • the method of the present invention is not particularly limited, and
  • the mass content of N 2 in the light impurities is preferably ⁇ 9.0 ⁇ 10 -8 , more preferably ⁇ 8.0 ⁇ 10 -8 ;
  • the mass content of O 2 is preferably ⁇ 9.0 ⁇ 10 -8 , more preferably ⁇ 8.0 ⁇ 10 -8 ;
  • the mass content of CO is preferably ⁇ 3 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 ;
  • the mass content of CO 2 is preferably ⁇ 3 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 ;
  • SF 6 The mass content is preferably ⁇ 3 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 ;
  • the mass content of SiF 4 is preferably ⁇ 3 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 ;
  • the mass content of CF 4 is preferably ⁇ 3 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 ;
  • the present invention transports the product at the bottom of the light stripping tower 3 to the de-weighting tower 11 at a temperature of 3 ° C to 50 ° C,
  • the distillation was carried out under the conditions of a pressure of -0.03 MPa to 0.2 MPa.
  • the present invention transports the bottom product of the de-lighting tower 3 to the de-weighting tower 11 through the second fluid transport device to perform rectification.
  • the temperature of rectification in the de-heavy column 11 is preferably from 10 ° C to 30 ° C, more preferably from 15 ° C to 25 ° C, most preferably from 18 ° C to 22 ° C; in the de-weighting column 11
  • the pressure of the middle rectification is preferably -0.01 MPa to 0.1 MPa, more preferably -0.01 MPa to 0.05 MPa; and the reflux ratio of the de-weighting column 11 is preferably 0.1 to 10, more preferably 1 to 8, most preferably 3 ⁇ 8.
  • the portion of the bottom product of the de-lighting column 3 is heated by the first reboiler 2 Evaporation is returned to the de-lighting column 3 to provide heat during the rectification process; the remainder is sent to the de-weighting column 11 for rectification.
  • the present invention has no particular limitation on the ratio of the bottom product of the de-lighting tower 3 to the reflux light tower 3, and those skilled in the art can according to the actual production requirements, such as the heat required for the distillation process of the de-lighting tower 3, the production efficiency, and the de-weighting.
  • the raw material required for the distillation of the column 11 is set to an appropriate ratio.
  • the flow rate of the bottom product of the de-lighting tower 3 to the de-lighting tower 3 is preferably from 6 kg/h to 500 kg/h, and in the embodiment of the present invention, it may specifically be 6 kg/h, 10 kg/h, 100 kg / h or 500 kg / h; the flow rate of the bottom product of the de-lighting tower 3 to the de-weighting tower 11 is preferably 10 kg / h - 1000 kg / h, specifically 10 kg / h, 100 kg / h, 500 kg / h or 1000 kg /h.
  • the heavy impurities in the tungsten hexafluoride are separated to the bottom of the de-weighting column 11, and the tungsten hexafluoride is separated to the top of the de-weighting column 11, after purification
  • the tungsten hexafluoride is collected by the top outlet of the de-weighting tower 11.
  • the heavy impurities include MoF 6 .
  • the present invention analyzes the top product of the de-weighting column 11 and collects and purifies the mass of the heavy component MoF 6 when it is ⁇ 5 ⁇ 10 -8 .
  • the tungsten hexafluoride is preferably ⁇ 2 ⁇ 10 -8 , more preferably ⁇ 1 ⁇ 10 -8 .
  • the method of the present invention is not particularly limited, and may be carried out by gas chromatography well known to those skilled in the art.
  • the present invention sets the time for collecting and purifying tungsten hexafluoride by analyzing the mass content of heavy impurities in the top product of the de-heavy column 11.
  • the condensed partially purified tungsten hexafluoride is refluxed into the de-weighting tower 11 to provide a cooling amount for the rectification process; the remaining part of the purified hexafluoride
  • the tungsten is collected through the second outlet 14 to obtain purified tungsten hexafluoride.
  • the ratio of the purified tungsten hexafluoride in the reflux back to the heavy column 11 to the collected purified tungsten hexafluoride is determined by the reflux ratio of the de-heavy column 11 by a reflux ratio, and those skilled in the art The appropriate reflux ratio can be selected according to the actual production needs. .
  • the flow rate of the purified tungsten hexafluoride reflux to the de-heavy column 11 is preferably from 50 kg/h to 1000 kg/h, and may specifically be 90 kg/h, 50 kg/h, 150 kg/h, 300 kg/h or 1000 kg/ h; the flow rate of the remaining partially purified tungsten hexafluoride is preferably from 9 kg/h to 1000 kg/h, and may specifically be 9 kg/h, 100 kg/h, 300 kg/h, 450 kg/h or 1000 kg/h.
  • the heavy impurities in the bottom product of the de-heavy column 11 are preferably discharged. Specifically, a part of the bottom product of the de-heavy column 11 is collected through the third outlet 17, and the remaining portion is heated and refluxed by the second reboiler 10. Up to the de-weighting tower 11.
  • the present invention has no particular limitation on the proportion of the bottom product of the de-weighting column 11 flowing back to the de-weighting column 11 , and those skilled in the art can set the heat required for the rectification process of the de-heavy column 11 and the production efficiency according to the actual production requirements. Set the appropriate ratio.
  • the flow rate of the bottom product of the de-weighting tower 11 is preferably from 1 kg/h to 100 kg/h, and may specifically be 1 kg/h, 5 kg/h, 20 kg/h, 50 kg/h or 100 kg/h;
  • the flow rate of the product refluxed to the bottom of the de-weighting column in the de-weighting column is preferably from 100 kg/h to 2000 kg/h, and may specifically be 100 kg/h, 400 kg/h, 450 kg/h, 500 kg/h or 2000 kg/h.
  • the present invention provides a device for continuously rectifying and purifying tungsten hexafluoride, comprising a first fluid transport device 1; a de-lighting tower 3 having a feed port communicating with a discharge port of the first fluid transport device 1;
  • the top of the stripping tower 3 is provided with a first vacuum port 4;
  • the bottom end of the stripping tower 3 is provided with a first analysis port F1;
  • the second port of the feed port is connected to the first analysis port F1.
  • the device 18 has a dewatering tower 11 connected to the discharge port of the second fluid conveying device 18; a top portion of the de-weighting tower 11 is provided with a second vacuuming port 12 and a second analysis port F2.
  • the apparatus provided by the invention comprises a de-lighting tower 3 and a de-weighting tower 11, first conveying the tungsten hexafluoride to be purified to the de-lighting tower 3 for rectification; and then conveying the product at the bottom of the de-lighting tower 3 to the de-weighting tower Rectification is carried out, and then the purified six is collected at the top of the de-weighting tower 11 Tungsten fluoride.
  • the method provided by the present invention controls the time of de-lighting column rectification, de-removing column rectification, and the time of transferring the bottom product of the de-lighting tower to the de-weighting tower, and collecting and purifying the tungsten hexafluoride from the top of the de-weighting tower.
  • the tungsten hexafluoride obtained by the method provided by the invention has high purity and can reach 99.9999%, and the method provided by the invention has simple operation, high production efficiency and greatly reduces production cost.
  • Raw material The content of the tungsten hexafluoride gas to be purified is 99.95%, wherein the impurity content is shown in Table 1.
  • Table 1 is the impurity content in the raw material used in Example 1 of the present invention.
  • Rectification device a rectification device adopting the structure shown in Fig. 1, wherein the de-lighting tower 3 is 3000 mm high, 500 mm in diameter, the number of plates is 30, and the built-in diameter 5 mm stainless steel ⁇ ring packing; the de-weighting tower 11 is 3000 mm high and 500 mm in diameter The number of plates is 40, and the built-in diameter 5mm stainless steel ⁇ ring packing.
  • the de-lighting tower 3, the de-weighting tower 11 tower body, and the reboiler, condenser and piping are made of stainless steel.
  • Step 1 As shown in FIG. 1 , the first vacuuming port 4 and the second vacuuming port 12 pass The vacuum pump respectively evacuates the de-lighting tower 3, the de-weighting tower 11 and the connected pipeline to -0.1 MPa;
  • Step 2 The tungsten hexafluoride to be purified enters the de-lighting tower 3 through the first fluid transfer pump 1 at a flow rate of 100 kg/h at 16 °C.
  • rectification is carried out under operating conditions of 15 to 20 ° C, -0.01 to 0.03 MPa, and a reflux ratio of 30, and the light impurities are 3 kg/h after the overhead product vapor passes through the first condenser 5. Collected through the first outlet 6, the remainder is returned to the de-lighting tower 3 through the first return line 7 at a flow rate of 90 kg / h;
  • Step 3 Analyze the light component content of the bottom of the column by using the gas chromatograph through the first analysis port F1 at the bottom of the de-lighting tower 3. The result is shown in Fig. 2, and Fig. 2 is the gas phase of the bottom product of the de-lighting tower obtained in Example 1 of the present invention.
  • Step 4 In the de-weighting tower 11, the distillation is carried out under the operating conditions of 20-25 ° C, 0.01-0.05 MPa, and reflux ratio of 3.
  • the heavy component impurities in the product 3 are concentrated at the bottom of the column, and the heavy component impurities are 5 kg. /h is collected through the third outlet 17, and the remainder is introduced into the second reboiler 10 through the second line 16 at a flow rate of 400 kg/h, and is returned to the de-weighting tower 11 after heating.
  • the content of the top heavy component was analyzed by a gas chromatograph at the top of the de-concentration column 11 at the second analysis port F2. The results are shown in FIG. 3.
  • FIG. 3 The results are shown in FIG. 3.
  • Example 3 is a gas chromatographic analysis chart of the top product of the de-weighting column obtained in Example 1 of the present invention.
  • the mass content of the impurity of the heavy component is MoF 6 ⁇ 5 ⁇ 10 -8
  • a part of the purified tungsten hexafluoride is condensed in the second condenser 13 and is returned to the de-weighting tower through the return line 15 at a flow rate of 300 kg/h.
  • 11 was used to provide the cooling capacity during the rectification process, and the remainder was collected through the second outlet 14 at a flow rate of 100 kg/h.
  • the purity of the purified hexafluoride hexafluoride was determined by gas chromatography, and the purity of the purified hexafluoride hexafluoride was calculated to be 99.99991%.
  • the impurity content is shown in Table 2.
  • Table 2 is the purified hexafluoride obtained in Example 1 of the present invention. The content of impurities in tungsten.
  • Raw material The content of the tungsten hexafluoride gas to be purified is 99.99%, wherein the impurity content is shown in Table 3.
  • Table 3 is the impurity content in the raw material used in Example 2 of the present invention.
  • Rectification device a rectification device adopting the structure shown in Fig. 1, wherein the de-lighting tower 3 is 0.5 m high, 0.1 m in diameter, 20 plates, and has a built-in diameter of 1 mm polytetrafluoroethylene Raschig ring packing; 11 high 0.5m, diameter 0.1m, number of plates is 20, built-in diameter 1mm polytetrafluoroethylene Raschig ring packing.
  • the de-lighting tower 3, the de-weighting tower 11 tower body, and the reboiler, the condenser and the pipeline are made of Monel.
  • Step 1 the first vacuuming port 4 and the second vacuuming port 12 respectively evacuate the de-lighting tower 3, the de-weighting tower 11 and the connected pipeline to -0.1 MPa through a vacuum pump;
  • Step 2 The tungsten hexafluoride to be purified enters the de-lighting tower 3 through the first fluid transfer pump 1 at a flow rate of 10 kg/h at 50 °C.
  • rectification is carried out under operating conditions of 35 to 50 ° C, 0.05 to 0.20 MPa, and a reflux ratio of 5, and the light impurities pass at 1 kg/h after the overhead product vapor passes through the first condenser 5
  • the first outlet 6 is collected, and the remaining portion is returned to the de-lighting tower 3 through the first return line 7 at a flow rate of 5 kg/h;
  • Step 3 Analyze the light component content of the bottom of the column from the first analysis port F1 at the bottom of the de-lighting tower 3 using a gas chromatograph. The result is shown in FIG. 4, and FIG. 4 is the gas phase of the bottom product of the de-lighting tower obtained in Example 2 of the present invention.
  • Step 4 In the de-weighting column 11, the rectification is carried out under the operating conditions of 35 to 50 ° C, 0.05 to 0.20 MPa, and a reflux ratio of 10, and the heavy component impurities in the product 3 are concentrated at the bottom of the column, and the heavy component impurities are 1 kg. /h is collected through the third outlet 17, and the remaining portion enters the second reboiler 10 through the second line 16 at 100 kg/h, and is heated to return to the de-weighting tower 11. The content of the top heavy component was analyzed from the second analysis port at the top of the de-weighting column 11 by using a gas chromatograph. The results are shown in Fig. 5.
  • Fig. 5 The results are shown in Fig. 5.
  • Example 5 is a gas chromatographic analysis of the top product of the de-weighting column obtained in Example 2 of the present invention.
  • the heavy component impurity content MoF 6 ⁇ 5 ⁇ 10 -8 the purified tungsten hexafluoride is condensed in the second condenser 13 and a part thereof is refluxed through the return line 15 to the de-weighting tower 11 at a flow rate of 90 kg/h.
  • the inside was provided with a cooling capacity during the rectification process, and the other portion was collected at 9 kg/h through the second outlet 14.
  • the content of impurities in the purified hexafluoride hexafluoride was measured by gas chromatography and calculated after purification.
  • the purity of tungsten hexafluoride was 99.9999%, and the impurity content thereof is shown in Table 4.
  • Table 4 shows the impurity content of the purified tungsten hexafluoride obtained in Example 2 of the present invention.
  • Raw material The content of the tungsten hexafluoride gas to be purified was 99%, and the impurity content is shown in Table 5.
  • Table 5 is the impurity content in the raw material used in Example 3 of the present invention.
  • Rectification device adopts the rectification device of the structure shown in Fig. 1, wherein the de-lighting tower 3 is 15000 mm high, 3000 mm in diameter, the number of plates is 80, and the Pall ring packing with a diameter of 100 mm is built in; the de-weighting tower 11 is 15000 mm high. It has a diameter of 3000mm, a number of plates of 80, and a built-in diameter of 100mm stainless steel Pall ring packing.
  • the de-lighting tower 3, the de-weighting tower 11 tower body, and the reboiler, condenser and piping are made of stainless steel.
  • Step 1 the first vacuuming port 4 and the second vacuuming port 12 respectively evacuate the de-lighting tower 3, the de-weighting tower 11 and the connected pipeline to -0.1 MPa through a vacuum pump;
  • Step two the tungsten hexafluoride to be purified is passed through the first fluid transfer pump 1 at 1000 ° C for 1000
  • the flow rate of kg/h enters the de-lighting tower 3.
  • rectification is carried out under operating conditions of 3 to 5 ° C, -0.03 to 0.01 MPa, and a reflux ratio of 1, and the light impurities are 50 kg/h after the overhead product vapor passes through the first condenser 5. Collected through the first outlet 6, the remainder is returned to the de-lighting tower 3 through the first return line 7;
  • Step 3 Analyze the light component content of the bottom of the column from the first analysis port F1 at the bottom of the de-lighting tower 3 using a gas chromatograph. The result is shown in FIG. 6.
  • FIG. 6 is a gas phase of the bottom product of the de-lighting tower obtained in Example 3 of the present invention.
  • the mass content of light impurities N 2 and O 2 are ⁇ 1.0 ⁇ 10 -7 , CO, CO 2 , SF 6 , SiF 4 , CF 4 and N 2 O respectively ⁇ 5 ⁇ 10 -8 , HF ⁇
  • a part of the product 2 flowing out from the bottom of the de-lighting tower 3 enters the first reboiler 2 at a flow rate of 100 kg/h and is heated and evaporated back to the de-lighting tower 3 to provide heat during the rectification process, remaining Partially enters the de-weighting tower 11 through the first fluid transfer pump 8 through the first conduit 9 at a flow rate of 1000 kg/h;
  • Step 4 In the de-weighting column 11, the rectification is carried out under the operating conditions of 3 to 5 ° C, -0.03 to 0.01 MPa, and a reflux ratio of 1, and the heavy component impurities in the product 3 are concentrated at the bottom of the column, and the heavy component impurities are 100 kg/h is collected through the third outlet 17, and the remainder is passed through the second line 16 at a flow rate of 2000 kg/h into the second reboiler 10 and heated to return to the de-weighting tower 11.
  • the weight fraction of the top of the column was analyzed by a gas chromatograph at the top of the desorption column 11 at the second analysis port. The results are shown in Fig. 7. Fig.
  • Example 7 is a gas chromatographic analysis of the top product of the de-weighting column obtained in Example 3 of the present invention.
  • the mass content of the heavy component impurities when MoF 6 ⁇ 5 ⁇ 10 -8 , the purified tungsten hexafluoride is condensed in the second condenser 13 and a part is returned to the de-weighting column 11 through the return line 15 at 1000 kg/h.
  • another portion was collected through the second outlet 14 at a flow rate of 1000 kg/h.
  • the content of impurities in the purified hexafluoride hexafluoride was measured by gas chromatography, and the purity of the purified hexafluoride hexafluoride was calculated to be 99.9999%.
  • the impurity content is shown in Table 6. Table 6 is the present invention.
  • Raw material The content of the tungsten hexafluoride gas to be purified was 99%, and the impurity content is shown in Table 7.
  • Table 7 is the impurity content in the raw material used in Example 4 of the present invention.
  • Rectification device a rectification device adopting the structure shown in Fig. 1, wherein the de-lighting tower 3 is 8000 mm high, 2000 mm in diameter, the number of plates is 50, and the Pall ring packing with a diameter of 50 mm is built in; the de-weighting tower 11 is 8000 mm high. The diameter is 2000mm, the number of plates is 60, and the Pall ring packing with a diameter of 50mm is built in.
  • the de-lighting tower 3, the de-weighting tower 11 tower body, and the reboiler, the condenser and the pipeline are made of nickel.
  • Step 1 the first vacuuming port 4 and the second vacuuming port 12 respectively evacuate the de-lighting tower 3, the de-weighting tower 11 and the connected pipeline to -0.1 MPa through a vacuum pump;
  • Step 2 The tungsten hexafluoride to be purified is introduced into the de-lighting tower 3 through the first fluid transfer pump 1 at a flow rate of 500 kg/h at 3 °C.
  • the rectification is carried out under operating conditions of 0.01 to 0.10 MPa and a reflux ratio of 500.
  • the light impurities are collected through the first outlet 6 at 1 kg/h, and the remainder passes through the first reflux tube.
  • the road 7 is returned to the light tower 3;
  • Step 3 Analyze the light component content of the bottom of the column from the first analysis port F1 at the bottom of the de-lighting tower 3 using a gas chromatograph. The results are shown in Fig. 8.
  • Fig. 8 is a gas phase of the bottom product of the de-lighting tower obtained in Example 4 of the present invention.
  • Step 4 In the de-weighting tower 11, the rectification is carried out under the operating conditions of 23 to 25 ° C, 0.01 to 0.10 MPa, and a reflux ratio of 0.1, and the heavy component impurities in the product 3 are concentrated at the bottom of the column, and a part of the heavy component impurities are 50 kg/h was collected through the third outlet 17, and the remainder was passed through the second line 16 at a flow rate of 500 kg/h into the second reboiler 10 and heated to return to the de-weighting tower 11.
  • the weight fraction of the top of the column was analyzed by a gas chromatograph at the top of the desorption column 11 at the second analysis port. The results are shown in Fig. 9. Fig.
  • Example 9 is a gas chromatographic analysis of the top product of the de-weighting column obtained in Example 4 of the present invention.
  • Mass content of heavy component impurities When MoF 6 ⁇ 5 ⁇ 10 -8 , the purified tungsten hexafluoride is condensed in the second condenser 13 and a part is returned to the de-weighting column 11 through the return line 15 at 50 kg/h. To provide refrigeration during the rectification process, another portion was collected through the second outlet 14 at a flow rate of 450 kg/h.
  • the content of impurities in the purified hexafluoride hexafluoride was measured by gas chromatography, and the purity of the purified hexafluoride hexafluoride was calculated to be 99.9999%.
  • the impurity content is shown in Table 8.
  • Table 8 is the purified six obtained in Example 4 of the present invention. The content of impurities in tungsten fluoride.
  • Raw material The content of the tungsten hexafluoride gas to be purified is 99%, wherein the impurity content is shown in Table 9, and Table 9 is the impurity content in the raw material used in Example 5 of the present invention.
  • Rectification device a rectification device adopting the structure shown in Fig. 1, wherein the de-lighting tower 3 adopts a plate tower, the height is 5000 mm, the diameter is 1000 mm, and the number of plates is 40; the de-weighting tower 11 adopts a plate tower, the height is 5000 mm, and the diameter is 1000 mm. The number of plates is 50.
  • the de-lighting tower 3, the de-weighting tower 11 tower body, and the reboiler, condenser and piping are made of stainless steel.
  • Step 1 the first vacuuming port 4 and the second vacuuming port 12 respectively evacuate the de-lighting tower 3, the de-weighting tower 11 and the connected pipeline to -0.1 MPa through a vacuum pump;
  • Step 2 The tungsten hexafluoride to be purified enters the de-lighting tower 3 through the first fluid transfer pump 1 at a flow rate of 300 kg/h at 3 °C.
  • rectification is carried out under operating conditions of 23 to 25 ° C, 0.01 to 0.10 MPa, and a reflux ratio of 20, and the light impurities pass at 15 kg/h after the overhead product vapor passes through the first condenser 5.
  • the first outlet 6 is collected, and the remaining portion is passed through the first Return line 7 is returned to the de-lighting tower 3;
  • Step 3 The light component content of the bottom of the column is analyzed from the first analysis port F1 at the bottom of the de-lighting tower 3 by using a gas chromatograph. The result is shown in FIG. 10, and FIG. 10 is a gas phase of the bottom product of the de-lighting tower obtained in Example 5 of the present invention.
  • Step 4 In the de-weighting column 11, the distillation is carried out under the operating conditions of 23 to 25 ° C, 0.01 to 0.10 MPa, and a reflux ratio of 0.5, and the heavy component impurities in the product 3 are concentrated at the bottom of the column, and a part of the heavy component impurities are 20 g/h is collected through the third outlet 17, and the remainder is passed through the second line 16 at a flow rate of 450 kg/h into the second reboiler 10 and heated to return to the de-weighting tower 11.
  • the content of the top heavy component was analyzed by a gas chromatograph at the top of the desorption column 11 at the second analysis port. The results are shown in Fig. 11.
  • Fig. 11 The results are shown in Fig. 11. Fig.
  • Example 11 is a gas chromatographic analysis of the top product of the de-weighting column obtained in Example 5 of the present invention.
  • Mass content of heavy component impurities When MoF 6 ⁇ 5 ⁇ 10 -8 , the purified tungsten hexafluoride is condensed in the second condenser 13 and a part is returned to the de-weighting column 11 through the return line 15 at 150 kg/h. To provide the cooling capacity during the rectification process, another portion was collected through the second outlet 14 at a flow rate of 300 kg/h.
  • the purity of the purified hexafluoride hexafluoride was determined by gas chromatography, and the purity of the purified hexafluoride hexafluoride was calculated to be 99.9999%.
  • the impurity content is shown in Table 10.
  • Table 10 is the purification obtained in Example 5 of the present invention. The content of impurities in the post-hexafluoride tungsten.
  • the present invention provides a device for continuously rectifying and purifying tungsten hexafluoride, comprising a first fluid transport device 1; and a feed port communicating with a discharge port of the first fluid transport device 1 a light removal tower 3; a top portion of the light removal tower 3 is provided with a first vacuum port 4; a bottom end of the light removal tower is provided with a first analysis port F1; and a feed port is connected to the first analysis port F1 a second fluid delivery device 18; a de-weighting tower 11 having a feed port connected to a discharge port of the second fluid delivery device 18; a top portion of the de-weighting tower is provided with a second vacuum port 12 and a second analysis Mouth F2.
  • the device provided by the invention comprises a de-lighting tower and a de-weighting tower.
  • the tungsten hexafluoride to be purified is sent to a de-lighting tower for rectification; and the product at the bottom of the de-lighting tower is sent to a de-weighting tower for rectification.
  • the purified tungsten hexafluoride is then collected at the top of the de-weighting column.
  • the method provided by the present invention controls the time of de-lighting column rectification, de-removing column rectification, and the time of transferring the bottom product of the de-lighting tower to the de-weighting tower, and collecting and purifying the tungsten hexafluoride from the top of the de-weighting tower.
  • the tungsten hexafluoride obtained by the method provided by the invention has high purity and can reach 99.9999%, and the method provided by the invention has simple operation, high production efficiency and greatly reduces production cost.

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Abstract

提供一种连续精馏纯化六氟化钨的装置及方法。所述装置包括脱轻塔（3）和脱重塔（11），该方法包括将待纯化的六氟化钨输送至脱轻塔（3）中进行精馏，再将脱轻塔底部的产物输送至脱重塔（11）进行精馏；以及在脱重塔的顶部收集纯化后的六氟化钨的步骤。该方法得到的六氟化钨纯度可达99.9999%，且操作简单，具有较高的产率，降低了成本。

Description

一种连续精馏纯化六氟化钨的方法及装置 技术领域
本发明涉及精细化工技术领域，尤其涉及一种连续精馏纯化六氟化钨的方法及装置。
背景技术
六氟化钨(WF6)是一种有着广泛应用的气体，它主要用在电子工业中作为金属钨化学气相沉积(CVD)工艺的原材料，通过CVD工艺沉积的钨具有低电阻率、对电迁移的高抵抗力以及填充小通孔时优异的平整性等优点。通过混合金属的CVD工艺制得钨和铼的复合涂层，可用于X射线的发射电极和太阳能吸收器的制造。此外，WF6在电子行业中还用作半导体电极和导电浆糊等的原材料，上述应用需要六氟化钨达到较高的纯度以保证以六氟化钨为原材料所生产产品的稳定性和可靠性。
现有的六氟化钨的纯化主要有鼓泡法、冷凝抽真空法和间歇精馏等。鼓泡法是在六氟化钨为液体时，通入高纯惰性气体，如氦气，通过惰性气体的夹带将杂志从六氟化钨中分离出，再通过排空除去杂质，鼓泡法能得到超高纯的六氟化钨产品，但此种方法生产过程中需使用大量高纯氦气，生产成本较高。冷凝抽真空法将六氟化钨在低温下冷凝，冷凝的六氟化钨液体在0℃凝固，同时抽真空除去气相杂质；再使六氟化钨于密闭容器中在加压条件下加热，使溶于液态六氟化钨 中的气体因溶解度降低而溢出，在控制条件下气相卸压除去非挥发性杂质，再除去HF、SF6和CF4等挥发性杂质，最后除去N2、Ar等溶于液体六氟化钨中的挥发性杂质，该方法工艺简单，生产成本低，但难以生产高纯产品。
间歇精馏法将待纯化的六氟化钨分批进行精馏操作，该方法能够克服上述两种方法的缺陷，可以得到高纯产品，但生产效率低导致成本高，难以在大规模工业化生产中应用。
发明内容
本发明的目的在于提供一种连续精馏纯化六氟化钨的方法及装置，本发明提供的方法得到的六氟化钨具有较高的纯度，且该方法具有较高的生产效率、较低的生产成本。
根据本发明的一个方面，提供了一种连续精馏纯化六氟化钨的装置，包括第一流体输送装置1；
进料口与所述第一流体输送装置1的出料口相连通的脱轻塔3；
所述脱轻塔3的顶部设置有第一抽真空口4；
所述脱轻塔3的底端设置有第一分析口F1；
进料口与所述第一分析口F1相连的第二流体输送装置18；
进料口与所述第二流体输送装置18的出料口相连的脱重塔11；
所述脱重塔11的顶部设置有第二抽真空口12和第二分析口F2。
在本发明的一个实施方案中，所述脱轻塔3和脱重塔11独立的选自填料精馏塔和板式精馏塔。
在一个优选的实施方案中，所述脱轻塔3为板式精馏塔，所述脱轻塔3的塔板数为20-80；
所述脱重塔11为板式精馏塔，所述脱重塔11的理论塔板数为20-80。
在另一个优选的实施方案中，所述脱轻塔3的高度为0.5m-15m、直径为0.1m-3m；
所述脱重塔11的高度为0.5m-15m、直径为0.1m-3m。
在本发明的另一个实施方案中，所述脱轻塔3和脱重塔11为填料精馏塔，所述脱轻塔3和脱重塔11中的填料独立地选自θ环、鲍尔环和拉西环；
优选的，所述填料的直径为1mm-100mm。
根据本发明的另一个方面，提供了一种连续精馏纯化六氟化钨的方法，包括以下步骤：
(1)将脱轻塔3、与所述脱轻塔3相连管路、脱重塔11和与所述脱重塔11相连的管路抽真空；
(2)将待纯化的六氟化钨输送至脱轻塔3中，在温度为3℃-50℃、压力为-0.03MPa-0.2MPa的条件下进行精馏，轻质杂质在所述脱轻塔顶部被采出；
(3)将所述脱轻塔3底部的产物进行分析，待轻质杂质中N2的质量含量≤1.0×10-7、O2的质量含量≤1.0×10-7、CO的质量含量≤5×10-8、CO2的质量含量≤5×10-8、SF6的质量含量≤5×10-8、SiF4的质量含量≤5×10-8、CF4的质量含量≤5×10-8、N2O的质量含量≤5×10-8、HF的质量含量≤5×10-7后，将所述脱轻塔3底部的产物输送至脱重塔11中，在温度为3℃-50℃、压力为-0.03MPa-0.2MPa的条件下进行精馏；
(4)将所述脱重塔11塔顶的产物进行分析，待其中的轻质杂质 MoF6的质量含量≤5×10-8后，在所述脱重塔11的塔顶输出纯化后的六氟化钨。
在一个优选的实施方案中，所述输送待纯化六氟化钨的温度为3℃-50℃；
所述输送待纯化六氟化钨的流量为10kg/h-1000kg/h。
在另一个优选的实施方案中，所述脱轻塔3中的精馏温度5℃-25℃；
所述脱轻塔3中的精馏压力为-0.01MPa-0.1MPa。
在又一个优选的实施方案中，所述脱重塔11中的精馏温度为10℃-30℃；
所述脱重塔11中的精馏压力为-0.01MPa-0.1MPa。
在又一个优选的实施方案中，所述脱轻塔的回流比为1-500；
所述脱重塔的回流比为0.1-10。
本发明相对于现有技术具有以下方面的优势：
本发明提供了一种连续精馏纯化六氟化钨的装置，包括第一流体输送装置1；进料口与所述第一流体输送装置1的出料口相连通的脱轻塔3；所述脱轻塔3的顶部设置有第一抽真空口4；所述脱轻塔的底端设置有第一分析口F1；进料口与所述第一分析口F1相连的第二流体输送装置18；进料口与所述第二流体输送装置18的出料口相连的脱重塔11；所述脱重塔11的顶部设置有第二抽真空口12和第二分析口F2。本发明提供的装置包括脱轻塔3和脱重塔11，首先将待纯化的六氟化钨输送至脱轻塔3中进行精馏；再将脱轻塔3底部的产物输送至脱重塔11进行精馏，然后在脱重塔11的顶部收集纯化后的六氟化钨。本发明提供的方法通过控制脱轻塔精馏、脱重塔精馏的条件， 以及将脱轻塔底部产物输送至脱重塔的时间、由脱重塔顶部收集纯化后六氟化钨的时间，完成对六氟化钨的纯化。本发明提供的方法得到的六氟化钨具有较高的纯度，可达到99.9999％，且本发明提供的方法操作简单，具有较高的生产效率，极大的降低了生产成本。
附图说明
图1为本发明实施例提供的连续精馏纯化六氟化钨装置的结构示意图；
图2为本发明实施例1得到的脱轻塔底部产物的气相色谱分析图谱；
图3为本发明实施例1得到的脱重塔顶部产物的气相色谱分析图谱；
图4为本发明实施例2得到的脱轻塔底部产物的气相色谱分析图谱；
图5为本发明实施例2得到的脱重塔顶部产物的气相色谱分析图谱；
图6为本发明实施例3得到的脱轻塔底部产物的气相色谱分析图谱；
图7为本发明实施例3得到的脱重塔顶部产物的气相色谱分析图谱；
图8为本发明实施例4得到的脱轻塔底部产物的气相色谱分析图谱；
图9为本发明实施例4得到的脱重塔顶部产物的气相色谱分析图谱；
图10为本发明实施例5得到的脱轻塔底部产物的气相色谱分析 图谱；
图11为本发明实施例5得到的脱重塔顶部产物的气相色谱分析图谱。
具体实施方式
本发明提供了一种连续精馏纯化六氟化钨的装置，包括第一流体输送装置1；
进料口与所述第一流体输送装置1的出料口相连通的脱轻塔3；
所述脱轻塔3的顶部设置有第一抽真空口4；
所述脱轻塔3的底端设置有第一分析口F1；
进料口与所述第一分析口F1相连的第二流体输送装置18；
进料口与所述第二流体输送装置18的出料口相连的脱重塔11；
所述脱重塔11的顶部设置有第二抽真空口12和第二分析口F2。
采用本发明提供的装置对六氟化钨物料进行纯化时，先将待纯化的六氟化钨物料在脱轻塔3中精馏，六氟化钨中的轻质杂质由脱轻塔3的顶部出口收集，去除六氟化钨中的大部分轻质杂质；再将脱轻塔3底部的产物输送至脱重塔11进行精馏，六氟化钨中的重质杂质留在脱重塔11的底部，六氟化钨由脱重塔11顶部的出口收集得到。本发明提供的装置将六氟化钨物料依次经过脱轻塔精馏和脱重塔精馏，去除了六氟化钨中的轻质杂质和重质杂质，提高了得到的六氟化钨的纯度；且本发明提供的装置缩短了六氟化钨的纯化流程，提高了生产效率。
参见图1，图1为本发明实施例提供的连续精馏纯化六氟化钨装 置的结构示意图，其中，其中1为第一流体输送泵，2为第一再沸器，3为脱轻塔，4为第一抽真空口，5为第一冷凝器，6为第一出口，7为第一回流管路，8为第二流体输送泵，9为第一管路，10为第二再沸器，11为脱重塔，12为第二抽真空口，13为第二冷凝器，14为第二出口，15为回流管路，16为第二管路，17为第三出口，F1为第一分析口，F2为第二分析口；在上述结构示意图中，第二流体输送泵8与第一管路9组成了第二流体输送装置18。
本发明提供的装置包括第一流体输送装置1，所述第一流体输送装置1用于将待纯化的六氟化钨输送至脱轻塔3中，进行精馏。本发明对所述第一流体输送装置1的组成和结构没有特殊的限制，采用本领域技术人员熟知的流体输送装置即可，如可以采用流体输送泵，相应的第一流体输送装置为第一流体输送泵。在本发明的实施例中，为了控制待纯化的六氟化钨的输送，可以在第一流体输送装置与脱轻塔之间设置阀门。
本发明提供的装置包括脱轻塔3，具体的所述脱轻塔3的侧壁设置有进料口，所述脱轻塔3的进料口与所述第一流体输送装置1的出料口相连。在所述脱轻塔3中，将待纯化的六氟化钨进行精馏，其中的轻质杂质被分离到脱轻塔的顶部，六氟化钨和重质杂质分离到脱轻塔3的底部，在所述脱轻塔3的顶部收集轻质杂质，从而将大部分轻质杂质由六氟化钨物料中分离出来。本发明对进料口在所述脱轻塔3侧壁设置的位置没有特殊的限制，本领域技术人员可根据实际生产的需要，在脱轻塔3侧壁的合适位置设置进料口，在本发明的实施例中，所述脱轻塔3的侧壁中部设置有进料口。
在本发明的实施例中，所述脱轻塔3可以为填料精馏塔或板式精 馏塔，优选为填料精馏塔；在本发明中，当所述脱轻塔3为填料精馏塔时，所述脱轻塔3中填料可选自θ环、鲍尔环或拉西，优选为θ环；所述填料的材质可以为聚四氟乙烯、不锈钢、镍或蒙乃尔合金，优选为不锈钢；所述填料的直径可以为1mm～100mm，还可以为10mm～50mm，在本发明的实施例中，所述填料的直径可具体为1mm、5mm、10mm、30mm、50mm、60mm、70mm、80mm、90mm或100mm；
在本发明中，当所述脱轻塔3为板式脱轻塔时，所述脱轻塔3的塔板数可以20～80，还可以为30～50，在本发明的实施例中，所述脱轻塔3的塔板数可具体为20、30、40、50、80；
在本发明的实施例中，所述脱轻塔3的材质可以为不锈钢、镍或蒙乃尔合金，优选为不锈钢；所述脱轻塔3的高度可以为0.5m～15m，还可以为3m～8m，在本发明的实施例中，所述脱轻塔3的高度可具体为0.5m、3m、5m、8m、10m、12m或15m；所述脱轻塔3的直径可以为0.1m～3m，还可以为0.1m～2m，也可以为0.5m～1.5m，在本发明的实施例中，所述脱轻塔3的直径可具体为0.1m、0.5m、1m、1.5m、2m、2.5m或3m。
在本发明中，所述脱轻塔3的底端设置有第一分析口F1，所述第一分析口与气相色谱的进料口相连，用于收集脱轻塔3分离到底部的产物，进行气相色谱检测，从而根据气相色谱的检测结果判断精馏的时间。在本发明的实施例中，所述第一分析口F1还与第一再沸器2的进料口相连，用于将脱轻塔3底部输出的产物加热蒸发；所述第一再沸器2的出料口与所述脱轻塔3侧壁底部的回流口相连，用于将第一再沸器2加热的物料输送回脱轻塔3，为脱轻塔3中的精馏过程 提供热量。
在本发明中，所述脱轻塔3的顶部设置有第一抽真空口4，用于对脱轻塔3及与所述脱轻塔3相连的管路进行抽真空，以达到精馏所需的压力。在本发明的实施例中，所述第一抽真空口4还与第一冷凝器5的进料口相连，所述第一冷凝器5的出料口与第一出口6相连，用于将轻质杂质排出；所述第一冷凝器5的出料口还与第一回流管路7的进料口相连，所述第一回流管路7的出料口与所述脱轻塔3侧壁上的轻质杂质回流口相连，所述轻质杂质回流口设置在所述脱轻塔3侧壁的顶部，用于将剩余部分的轻质杂质回流至所述脱轻塔3中。
在本发明的实施例中，为了控制轻质杂质的回流，可以在第一冷凝器5与脱轻塔3之间的管路上设置阀门。
在本发明的实施例中，所述第一分析口F1还与第二流体输送装置18的进料口相连，用于将脱轻塔3底部的产物输送至脱重塔11中进行精馏，进一步对六氟化钨进行纯化。在本发明的实施例中，所述第二流体输送装置18可具体包括第一管路9和第二流体输送泵8，所述第一管路9的进料口与所述第一分析口F1相连，所述第一管路9的出料口与所述第二流体输送泵8的进料口相连，所述第二流体泵8的出料口与所述脱重塔11的进料口相连。在本发明中，所述脱重塔11的进料口可以设置在所述脱重塔11的侧壁，本发明对所述脱重塔11进料口在侧壁上的位置没有特殊的限制，本领域技术人员可根据实际生产的需要设置合适的进料口的位置；在本发明的实施例中，所述脱重塔11的进料口设置在所述脱重塔11侧壁的中部。
在本发明的实施例中，为了控制脱轻塔3底部产物向脱重塔11中的输送，可以在第一分析口F1与第二流体输送装置18之间设置阀 门。具体的，可以在第一分析口F1与第二流体输送泵8之间的管路上设置阀门，在第二流体输送泵8与脱重塔11之间的管路上设置阀门。
在本发明的实施例中，所述脱重塔11可以为填料精馏塔或板式精馏塔，优选为填料精馏塔；在本发明中，当所述脱重塔11为填料精馏塔时，所述脱重塔11中填料可选自θ环、鲍尔环或拉西，优选为θ环；所述填料的材质可以为聚四氟乙烯、不锈钢、镍或蒙乃尔合金，优选为不锈钢；所述填料的直径可以为1mm～100mm，还可以为10mm～50mm，在本发明的实施例中，所述填料的直径可具体为1mm、5mm、10mm、30mm、50mm、60mm、70mm、80mm、90mm或100mm；
在本发明中，当所述脱重塔11为板式脱重塔时，所述脱重塔11的塔板数可以20～80，还可以为30～50，在本发明的实施例中，所述脱重塔11的塔板数可具体为20、30、40、50、80；
在本发明的实施例中，所述脱重塔11的材质可以为不锈钢、镍或蒙乃尔合金，优选为不锈钢；所述脱重塔11的高度可以为0.5m～15m，还可以为3m～8m，在本发明的实施例中，所述脱重塔11的高度可具体为0.5m、3m、5m、8m、10m、12m或15m；所述脱重塔11的直径可以为0.1m～3m，还可以为0.1m～2m，也可以为0.5m～1.5m，在本发明的实施例中，所述脱重塔11的直径可具体为0.1m、0.5m、1m、1.5m、2m、2.5m或3m。
所述脱轻塔3底部的产物通过第二流体输送装置18输送至脱重塔中，进一步进行精馏，分离六氟化钨中的重质杂质，从而实现对六氟化钨的连续精馏提纯。
在本发明中，所述脱重塔11的顶部设置有第二抽真空口12和第二分析口F2，在本发明中，所述第二抽真空口12和第二分析口F2可以在脱重塔11上共用一个开口；所述第二抽真空口12用于将脱重塔11及与所述脱重塔11相连的管路进行抽真空，以达到脱重塔11精馏所需的压力。在本发明中，所述第二分析口F2与气相色谱仪的进料口相连，用于对脱重塔11顶部的产物进行检测，从而设置脱重塔11中精馏的时间。
在本发明的实施例中，所述第二分析口F2还与第二冷凝器13的进料口相连，所述第二冷凝器13的出料口与第二出口14相连，用于收集纯化后的六氟化钨；所述第二冷凝器13的出料口还与第二回流管路15的进料口相连，所述第二回流管路的出料口与所述脱重塔11侧壁上的回流口相连，所述回流口设置在所述脱轻塔侧壁的顶部，用于将剩余部分的纯化六氟化钨回流至脱重塔11中，为脱重塔11中的精馏过程提供冷量。
在本发明的实施例中，为了控制纯化六氟化钨的回流，可以在第二冷凝器13与脱重塔11之间的管路上设置阀门。
在本发明中，所述脱重塔11底部还设置有出口，用于将精馏分离得到的重质杂质排出。在本发明的实施例中，具体的，所述脱重塔11底部的出口与第三出口相连，用于将脱重塔11底部的产物排出。在本发明的实施例中，所述脱重塔11底部的出口还与第二再沸器10的进料口相连，具体的，可以通过第二管路16连接脱重塔11底部的出口与第二再沸器10的进料口，用于将脱重塔11底部输出的产物加热，回流至脱重塔11中。具体的，为了控制重质杂质的排出，可以在脱重塔11底部出口与第三出口17之间的管路上设置阀门。
本发明提供的上述装置可用于六氟化钨的纯化，具体的，本发明提供了一种连续精馏纯化六氟化钨的方法，包括以下步骤：
将脱轻塔3、与所述脱轻塔3相连管路、脱重塔11和与所述脱重塔11相连的管路抽真空；
将待纯化的六氟化钨输送至脱轻塔3中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏，轻质杂质在所述脱轻塔3顶部被采出；
将所述脱轻塔3底部的产物进行分析，待轻质杂质中N2的质量含量≤1.0×10-7、O2的质量含量≤1.0×10-7、CO的质量含量≤5×10-8、CO2的质量含量≤5×10-8、SF6的质量含量≤5×10-8、SiF4的质量含量≤5×10-8、CF4的质量含量≤5×10-8、N2O的质量含量≤5×10-8、HF的质量含量≤5×10-7后，将所述脱轻塔3底部的产物输送至脱重塔11中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏；
将所述脱重塔11塔顶的产物进行分析，待其中的轻质杂质MoF6的质量含量≤5×10-8后，在所述脱重塔11的塔顶输出纯化后的六氟化钨。
本发明在对待纯化的六氟化钨进行纯化前，将上述技术方案所述装置中的脱轻塔3、与所述脱轻塔3相连的管路、脱重塔11以及与所述脱重塔11相连的管路抽真空，具体的，通过所述第一抽真空口4对脱轻塔3及与所述脱轻塔3相连的管路进行抽真空，通过所述第二抽真空口12对脱重塔11及与所述脱重塔11相连的光路进行抽真空。本发明优选抽真空至-0.1MPa。
完成对脱轻塔3、与所述脱轻塔3相连的管路、脱重塔11及与所述脱重塔11相连的管路的抽真空后，本发明将待纯化六氟化钨输 送至脱轻塔3中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏，轻质杂质在所述脱轻塔3顶部被采出。具体的，本发明将待纯化的六氟化钨通过第一流体输送装置1输送至脱轻塔3中进行精馏。在本发明中，所述待纯化的六氟化钨的纯度优选为99％～99.99％。本发明优选在4℃～16℃的条件下，将待纯化的六氟化钨输送至脱轻塔3中，更优选在5℃～15℃，最优选为8℃～12℃；所述输送待纯化的六氟化钨的流量优选为100kg/h～500kg/h，更优选为150kg/h～450kg/h，最优选为200kg/h～400kg/h。
在本发明中，所述在脱轻塔3中的精馏的温度优选为5℃～25℃，更优选为10℃～20℃，最优选为12℃～18℃；所述在脱轻塔3中精馏的压力优选为-0.01MPa～0.1MPa，更优选为-0.01MPa～0.03MPa；所述脱轻塔3的回流比优选为1～500，更优选为5～200，最优选为5～30。
在所述脱轻塔3的精馏过程中，待纯化的六氟化钨中的大部分轻质杂质分离至脱轻塔3的顶端，六氟化钨和重质杂质被分离到脱轻塔的底部。在本发明中，所述轻质杂质包括HF、CO、N2、O2、CF4、SF6和CO2。具体的，在脱轻塔顶部产物通过第一冷凝器5后由第一出口6收集，在本发明中，所述收集轻质杂质的流速优选为1kg/h～50kg/h，更优选为3kg/h～25kg/h。
本发明优选将剩余部分的轻质杂质通过上述技术方案所述的第一回流管路7回流到脱轻塔3中。在本发明中，所述回流到脱轻塔3中的比例由所述脱轻塔3的回流比决定，本领域技术人员可根据实际生产的需要，选择合适的回流比。
在脱轻塔3中精馏的过程中，将所述脱轻塔3底部的产物进行分析，待轻质杂质中N2的质量含量≤1.0×10-7、O2的质量含量≤1.0×10-7、 CO的质量含量≤5×10-8、CO2的质量含量≤5×10-8、SF6的质量含量≤5×10-8、SiF4的质量含量≤5×10-8、CF4的质量含量≤5×10-8、N2O的质量含量≤5×10-8、HF的质量含量≤5×10-7后，将所述脱轻塔3底部的产物输送至脱重塔中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏。本发明对所述分析的方法没有特殊的限制，采用本领域技术人员熟知的气相色谱法即可。本发明通过分析脱轻塔3底部产物中轻质杂质的含量，设定精馏的时间。
在本发明中，轻质杂质中N2的质量含量优选≤9.0×10-8，更优选为≤8.0×10-8；O2的质量含量优选≤9.0×10-8，更优选为≤8.0×10-8；CO的质量含量优选≤3×10-8，更优选≤1×10-8；CO2的质量含量优选≤3×10-8，更优选≤1×10-8；SF6的质量含量优选≤3×10-8，更优选≤1×10-8；SiF4的质量含量优选≤3×10-8，更优选≤1×10-8；CF4的质量含量优选≤3×10-8，更优选≤1×10-8；N2O的质量含量优选≤3×10-8，更优选≤1×10-8；HF的质量含量优选≤3×10-7，更优选≤1×10-7。
在本发明中，待脱轻塔3底部产物中的轻质杂质含量满足上述条件后，本发明将脱轻塔3底部的产物输送至脱重塔11中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏。具体的，本发明通过所述第二流体输送装置将所述脱轻塔3底部产物输送至脱重塔11中，进行精馏。在本发明中，在所述脱重塔11中精馏的温度优选为10℃～30℃，更优选为15℃～25℃，最优选为18℃～22℃；在所述脱重塔11中精馏的压力优选为-0.01MPa～0.1MPa，更优选为-0.01MPa～0.05MPa；所述脱重塔11的回流比优选为0.1～10，更优选为1～8，最优选为3～8。
本发明优选将脱轻塔3底部产物中的部分通过第一再沸器2加热 蒸发回到脱轻塔3中，以提供精馏过程中的热量；剩余部分被输送至脱重塔11进行精馏。本发明对脱轻塔3底部产物回流回脱轻塔3的比例没有特殊的限制，本领域技术人员可根据实际生产的需要，如脱轻塔3精馏过程所需热量、生产效率、脱重塔11精馏所需原料等，设定合适的比例。在本发明中，所述脱轻塔3底部产物回流至脱轻塔3的流量优选为6kg/h～500kg/h，在本发明的实施例中，可具体为6kg/h、10kg/h、100kg/h或500kg/h；所述脱轻塔3底部产物输送至脱重塔11的流量优选为10kg/h～1000kg/h，可具体为10kg/h、100kg/h、500kg/h或1000kg/h。
在所述脱重塔11的精馏过程中，六氟化钨中的大部分重质杂质分离至脱重塔11的底部，六氟化钨被分离至脱重塔11的顶部，纯化后的六氟化钨由脱重塔11的顶部出口收集。在本发明中，所述重质杂质包括MoF6。
在脱重塔11中精馏的过程中，本发明将所述脱重塔11顶部产物进行分析，待其中的重质组分MoF6的质量含量≤5×10-8时，收集纯化后的六氟化钨，优选≤2×10-8，更优选≤1×10-8。本发明对所述分析的方法没有特殊的限制，采用本领域技术人员熟知的气相色谱即可。本发明通过分析脱重塔11顶部产物中重质杂质的质量含量，设定收集纯化六氟化钨的时间。
具体的，本发明通过所述第二冷凝器13的冷却后，将冷凝后的部分纯化六氟化钨回流至脱重塔11内，为精馏过程提供冷量；剩余部分的纯化六氟化钨通过第二出口14收集得到纯化的六氟化钨。在本发明中，回流回脱重塔11内的纯化六氟化钨与收集到的纯化六氟化钨的比例由所述脱重塔11的回流比回流比决定，本领域技术人员 可根据实际生产的需要，选择合适的回流比。。在本发明中，纯化六氟化钨回流回脱重塔11内的流量优选为50kg/h～1000kg/h，可具体为90kg/h、50kg/h、150kg/h、300kg/h或1000kg/h；所述剩余部分纯化六氟化钨流出的流量优选为9kg/h～1000kg/h，可具体为9kg/h、100kg/h、300kg/h、450kg/h或1000kg/h。
本发明优选将脱重塔11底部产物中的重质杂质排出，具体的，所述脱重塔11底部产物中一部分通过第三出口17收集，剩余部分经过第二再沸器10的加热后回流至脱重塔11中。本发明对脱重塔11底部产物回流回脱重塔11的比例没有特殊的限制，本领域技术人员可根据实际生产的需要，如脱重塔11精馏过程所需热量、生产效率等，设定合适的比例。在本发明中，所述脱重塔11底部产物排出的流量优选为1kg/h～100kg/h，可具体为1kg/h、5kg/h、20kg/h、50kg/h或100kg/h；所述回流至脱重塔中脱重塔底部产物的流量优选为100kg/h～2000kg/h，可具体为100kg/h、400kg/h、450kg/h、500kg/h或2000kg/h。
本发明提供了一种连续精馏纯化六氟化钨的装置，包括第一流体输送装置1；进料口与所述第一流体输送装置1的出料口相连通的脱轻塔3；所述脱轻塔3的顶部设置有第一抽真空口4；所述脱轻塔3的底端设置有第一分析口F1；进料口与所述第一分析口F1相连的第二流体输送装置18；进料口与所述第二流体输送装置18的出料口相连的脱重塔11；所述脱重塔11的顶部设置有第二抽真空口12和第二分析口F2。本发明提供的装置包括脱轻塔3和脱重塔11，首先将待纯化的六氟化钨输送至脱轻塔3中进行精馏；再将脱轻塔3底部的产物输送至脱重塔进行精馏，然后在脱重塔11的顶部收集纯化后的六 氟化钨。本发明提供的方法通过控制脱轻塔精馏、脱重塔精馏的条件，以及将脱轻塔底部产物输送至脱重塔的时间、由脱重塔顶部收集纯化后六氟化钨的时间，完成对六氟化钨的纯化。本发明提供的方法得到的六氟化钨具有较高的纯度，可达到99.9999％，且本发明提供的方法操作简单，具有较高的生产效率，极大的降低了生产成本。
为了进一步说明本发明，下面结合实施例对本发明提供的连续精馏纯化六氟化钨的方法和装置进行详细地描述，但不能将它们理解为对本发明保护范围的限定。
实施例1
原料：待纯化六氟化钨气体中含量为99.95％，其中杂质含量见表1，表1为本发明实施例1采用的原料中的杂质含量。
表1 本发明实施例1采用的原料中的杂质含量
组分 N2 O2+Ar CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 90 76 41 36 43 25 65 27 32 45
精馏装置：采用图1所示结构的精馏装置，其中，脱轻塔3高3000mm，直径500mm，塔板数为30，内置直径5mm不锈钢θ环填料；脱重塔11高3000mm，直径500mm，塔板数为40，内置直径5mm不锈钢θ环填料。脱轻塔3、脱重塔11塔体以及再沸器、冷凝器和管路采用不锈钢材质。
精馏过程：
步骤一：如图1所示，第一抽真空口4、第二抽真空口12通过 真空泵分别将脱轻塔3、脱重塔11及相连管路抽真空至-0.1MPa；
步骤二：待纯化六氟化钨在16℃的条件下通过第一流体输送泵1以100kg/h的流量进入到脱轻塔3中。在脱轻塔3中，在15～20℃，-0.01～0.03MPa，回流比为30的操作条件下进行精馏，在塔顶产物蒸汽通过第一冷凝器5后轻质杂质以3kg/h通过第一出口6收集，剩余部分以90kg/h的流量通过第一回流管路7回流到脱轻塔3中；
步骤三：使用气相色谱仪通过脱轻塔3底部第一分析口F1分析塔底轻组分含量，结果如图2所示，图2为本发明实施例1得到的脱轻塔底部产物的气相色谱分析图谱，待轻质杂质质量含量：N2和O2分别≤1.0×10-7，CO、CO2、SF6、SiF4、CF4和N2O分别≤5×10-8，HF≤5×10-7后，从脱轻塔3底部流出的产物2中一部分以10kg/h流量进入第一再沸器2加热蒸发回到脱轻塔3以提供精馏过程中的热量，剩余部分以100kg/h的流量经过第一管路9通过第二流体输送泵8进入到脱重塔11中；
步骤四：在脱重塔11中，在20～25℃、0.01～0.05MPa、回流比为3的操作条件下进行精馏，产物3中的重组分杂质塔底富集，重组分杂质以5kg/h通过第三出口17收集，剩余部分以400kg/h的流量通过第二管路16进入到第二再沸器10中经加热后回到脱重塔11中。使用气相色谱仪在脱重塔11顶部第二分析口F2分析塔顶重组分含量，结果如图3所示，图3为本发明实施例1得到的脱重塔顶部产物的气相色谱分析图谱，待重组分杂质质量含量MoF6≤5×10-8时，纯化后的六氟化钨在第二冷凝器13中冷凝后有一部分以300kg/h的流量通过回流管路15回流到脱重塔11内以提供精馏过程中的冷量，其余部分以100kg/h的流量通过第二出口14收集得到。
用气相色谱仪检测纯化后六氟化钨中杂质含量，计算得到纯化后六氟化钨的纯度为99.99991％，其中杂质含量参见表2，表2为本发明实施例1得到的纯化后六氟化钨中的杂质含量。
表2 本发明实施例1得到的纯化后六氟化钨中的杂质含量
杂质 N2 O2 CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 0.09 0.04 0.02 0.05 0.03 0.01 0.05 0.02 0.05 0.40
实施例2
原料：待纯化六氟化钨气体中含量为99.99％，其中杂质含量见表3，表3为本发明实施例2采用的原料中的杂质含量。
表3 本发明实施例2采用的原料中的杂质含量
组分 N2 O2+Ar CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 10 8 9 4 3 2 7 12 5 35
精馏装置：采用图1所示结构的精馏装置，其中，脱轻塔3高0.5m，直径0.1m，塔板数为20，内置直径1mm聚四氟乙烯拉西环填料；脱重塔11高0.5m，直径0.1m，塔板数为20，内置直径1mm聚四氟乙烯拉西环填料。脱轻塔3、脱重塔11塔体以及再沸器、冷凝器和管路采用蒙乃尔材质。
精馏过程：
步骤一：第一抽真空口4、第二抽真空口12通过真空泵分别将脱轻塔3、脱重塔11及相连管路抽真空至-0.1MPa；
步骤二：待纯化六氟化钨在50℃通过第一流体输送泵1以10kg/h的流量进入到脱轻塔3中。在脱轻塔3中，在35～50℃，0.05～0.20MPa，回流比为5的操作条件下进行精馏，在塔顶产物蒸汽通过第一冷凝器5后轻质杂质以1kg/h通过第一出口6收集，剩余部分以5kg/h的流速通过第一回流管路7回流到脱轻塔3中；
步骤三：使用气相色谱仪从脱轻塔3底部第一分析口F1分析塔底轻组分含量，结果如图4所示，图4为本发明实施例2得到的脱轻塔底部产物的气相色谱分析图谱，待轻质杂质质量含量：N2和O2分别≤1.0×10-7，CO、CO2、SF6、SiF4、CF4和N2O分别≤5×10-8，HF≤5×10-7后，从脱轻塔3底部流出的产物2中一部分以6kg/h的流量进入第一再沸器2加热蒸发回到脱轻塔3以提供精馏过程中的热量，剩余部分以10kg/h的流量经过第一管路9通过第二流体输送泵8进入到脱重塔11中；
步骤四：在脱重塔11中，在35～50℃、0.05～0.20MPa、回流比为10的操作条件下进行精馏，产物3中的重组分杂质塔底富集，重组分杂质以1kg/h通过第三出口17收集，剩余部分以100kg/h通过第二管路16进入到第二再沸器10中经加热后回到脱重塔11中。使用气相色谱仪从脱重塔11顶部第二分析口分析塔顶重组分含量，结果如图5所示，图5为本发明实施例2得到的脱重塔顶部产物的气相色谱分析图谱，待重组分杂质质量含量MoF6≤5×10-8时，将纯化后的六氟化钨在第二冷凝器13中冷凝后一部分以90kg/h的流量通过回流管路15回流到脱重塔11内以提供精馏过程中的冷量，另一部分以9kg/h通过第二出口14收集得到。
用气相色谱仪检测纯化后六氟化钨中杂质含量，计算得到纯化后 六氟化钨的纯度为99.9999％，其中杂质含量见表4，表4为本发明实施例2得到的纯化后六氟化钨的杂质含量。
表4 本发明实施例2得到的纯化后六氟化钨的杂质含量
杂质 N2 O2 CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 0.1 0.09 0.05 0.05 0.03 0.02 0.05 0.03 0.04 0.41
实施例3
原料：待纯化六氟化钨气体中含量为99％，其中杂质含量见表5，表5为本发明实施例3采用的原料中的杂质含量。
表5 本发明实施例3采用的原料中的杂质含量
组分 N2 O2+Ar CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 2500 1800 900 400 300 200 700 1200 500 1500
精馏装置：采用图1所示结构的精馏装置，其中，脱轻塔3高15000mm，直径3000mm，塔板数为80，内置直径100mm不锈钢材质鲍尔环填料；脱重塔11高15000mm，直径3000mm，塔板数为80，内置直径100mm不锈钢材质鲍尔环填料。脱轻塔3、脱重塔11塔体以及再沸器、冷凝器和管路采用不锈钢材质。
精馏过程：
步骤一：第一抽真空口4、第二抽真空口12通过真空泵分别将脱轻塔3、脱重塔11及相连管路抽真空至-0.1MPa；
步骤二：将待纯化六氟化钨在3℃通过第一流体输送泵1以1000 kg/h的流量进入到脱轻塔3中。在脱轻塔3中，在3～5℃，-0.03～0.01MPa，回流比为1的操作条件下进行精馏，在塔顶产物蒸汽通过第一冷凝器5后轻质杂质以50kg/h通过第一出口6收集，剩余部分通过第一回流管路7回流到脱轻塔3中；
步骤三：使用气相色谱仪从脱轻塔3底部第一分析口F1分析塔底轻组分含量，结果如图6所示，图6为本发明实施例3得到的脱轻塔底部产物的气相色谱分析图谱，待轻质杂质质量含量N2和O2分别≤1.0×10-7，CO、CO2、SF6、SiF4、CF4和N2O分别≤5×10-8，HF≤5×10-7后，从脱轻塔3底部流出的产物2中一部分以100kg/h的流量进入第一再沸器2加热蒸发回到脱轻塔3以提供精馏过程中的热量，剩余部分以1000kg/h的流量经过第一管路9通过第二流体输送泵8进入到脱重塔11中；
步骤四：在脱重塔11中，在3～5℃、-0.03～0.01MPa、回流比为1的操作条件下进行精馏，产物3中的重组分杂质塔底富集，重组分杂质以100kg/h通过第三出口17收集，剩余部分以2000kg/h的流速通过第二管路16进入到第二再沸器10中经加热后回到脱重塔11中。使用气相色谱仪在脱重塔11顶部第二分析口分析塔顶重组分含量，结果如图7所示，图7为本发明实施例3得到的脱重塔顶部产物的气相色谱分析图谱，待重组分杂质的质量含量：MoF6≤5×10-8时，纯化后的六氟化钨在第二冷凝器13中冷凝后一部分以1000kg/h通过回流管路15回流到脱重塔11内以提供精馏过程中的冷量，另一部分以1000kg/h的流速通过第二出口14收集得到。
用气相色谱仪检测纯化后六氟化钨中的杂质含量，计算得到纯化后六氟化钨的纯度为99.9999％，其中杂质含量见表6，表6为本发明 实施例3得到的纯化后六氟化钨中的杂质含量。
表6 本发明实施例3得到的纯化后六氟化钨中的杂质含量
杂质 N2 O2 CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 0.08 0.07 0.05 0.04 0.04 0.05 0.05 0.05 0.04 0.33
实施例4
原料：待纯化六氟化钨气体中含量为99％，其中杂质含量见表7，表7为本发明实施例4采用的原料中的杂质含量。
表7 本发明实施例4采用的原料中的杂质含量
组分 N2 O2+Ar CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 2600 1700 800 500 200 300 800 1100 400 1600
精馏装置：采用图1所示结构的精馏装置，其中，脱轻塔3高8000mm，直径2000mm，塔板数为50，内置直径50mm镍材质鲍尔环填料；脱重塔11高8000mm，直径2000mm，塔板数为60，内置直径50mm镍材质鲍尔环填料。脱轻塔3、脱重塔11塔体以及再沸器、冷凝器和管路采用镍材质。
精馏过程：
步骤一：第一抽真空口4、第二抽真空口12通过真空泵分别将脱轻塔3、脱重塔11及相连管路抽真空至-0.1MPa；
步骤二：将待纯化六氟化钨在3℃通过第一流体输送泵1以500kg/h的流量进入到脱轻塔3中。在脱轻塔3中，在23～25℃、 0.01～0.10MPa、回流比为500的操作条件下进行精馏，在塔顶产物蒸汽通过第一冷凝器5后轻质杂质以1kg/h通过第一出口6收集，剩余部分通过第一回流管路7回流到脱轻塔3中；
步骤三：使用气相色谱仪从脱轻塔3底部第一分析口F1分析塔底轻组分含量，结果如图8所示，图8为本发明实施例4得到的脱轻塔底部产物的气相色谱分析图谱，待轻质杂质的质量含量：N2和O2分别≤1.0×10-7，CO、CO2、SF6、SiF4、CF4和N2O分别≤5×10-8，HF≤5×10-7后，从脱轻塔3底部流出的产物2中一部分以500kg/h进入第一再沸器2加热蒸发回到脱轻塔3以提供精馏过程中的热量，剩余部分以500kg/h的流量经过第一管路9通过第二流体输送泵8进入到脱重塔11中；
步骤四：在脱重塔11中，在23～25℃、0.01～0.10MPa、回流比为0.1的操作条件下进行精馏，产物3中的重组分杂质塔底富集，重组分杂质一部分以50kg/h通过第三出口17收集，剩余部分以500kg/h的流速通过第二管路16进入到第二再沸器10中经加热后回到脱重塔11中。使用气相色谱仪在脱重塔11顶部第二分析口分析塔顶重组分含量，结果如图9所示，图9为本发明实施例4得到的脱重塔顶部产物的气相色谱分析图谱，待重组分杂质的质量含量：MoF6≤5×10-8时，纯化后的六氟化钨在第二冷凝器13中冷凝后一部分以50kg/h通过回流管路15回流到脱重塔11内以提供精馏过程中的冷量，另一部分以450kg/h的流速通过第二出口14收集得到。用气相色谱仪检测纯化后六氟化钨中的杂质含量，计算得到纯化后六氟化钨的纯度为99.9999％，其中杂质含量见表8，表8为本发明实施例4得到的纯化后六氟化钨中的杂质含量。
表8 本发明实施例4得到的纯化后六氟化钨中的杂质含量
杂质 N2 O2 CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 0.10 0.09 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.37
实施例5
原料：待纯化六氟化钨气体中含量为99％，其中杂质含量见表9，表9为本发明实施例5采用的原料中的杂质含量。
表9 本发明实施例5采用的原料中的杂质含量
组分 N2 O2+Ar CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 2600 1700 800 500 200 300 800 1100 400 1600
精馏装置：采用图1所示结构的精馏装置，其中，脱轻塔3采用板式塔，高5000mm，直径1000mm，塔板数为40；脱重塔11采用板式塔，高5000mm，直径1000mm，塔板数为50。脱轻塔3、脱重塔11塔体以及再沸器、冷凝器和管路采用不锈钢材质。
精馏过程：
步骤一：第一抽真空口4、第二抽真空口12通过真空泵分别将脱轻塔3、脱重塔11及相连管路抽真空至-0.1MPa；
步骤二：待纯化六氟化钨在3℃通过第一流体输送泵1以300kg/h的流量进入到脱轻塔3中。在脱轻塔3中，在23～25℃、0.01～0.10MPa、回流比为20的操作条件下进行精馏，在塔顶产物蒸汽通过第一冷凝器5后轻质杂质以15kg/h通过第一出口6收集，剩余部分通过第一 回流管路7回流到脱轻塔3中；
步骤三：使用气相色谱仪从脱轻塔3底部第一分析口F1分析塔底轻组分含量，结果如图10所示，图10为本发明实施例5得到的脱轻塔底部产物的气相色谱分析图谱，待轻质杂质的质量含量：N2和O2分别≤1.0×10-7，CO、CO2、SF6、SiF4、CF4和N2O分别≤5×10-8，HF≤5×10-7后，从脱轻塔3底部流出的产物2中一部分以100kg/h的流量进入第一再沸器2加热蒸发回到脱轻塔3以提供精馏过程中的热量，剩余部分以300kg/h的流量经过第一管路9通过第二流体输送泵8进入到脱重塔11中；
步骤四：在脱重塔11中，在23～25℃、0.01～0.10MPa、回流比为0.5的操作条件下进行精馏，产物3中的重组分杂质塔底富集，重组分杂质一部分以20g/h通过第三出口17收集，剩余部分以450kg/h的流速通过第二管路16进入到第二再沸器10中经加热后回到脱重塔11中。使用气相色谱仪在脱重塔11顶部第二分析口分析塔顶重组分含量，结果如图11所示，图11为本发明实施例5得到的脱重塔顶部产物的气相色谱分析图谱，待重组分杂质的质量含量：MoF6≤5×10-8时，纯化后的六氟化钨在第二冷凝器13中冷凝后一部分以150kg/h通过回流管路15回流到脱重塔11内以提供精馏过程中的冷量，另一部分以300kg/h的流速通过第二出口14收集得到。
用气相色谱仪检测得到的纯化后六氟化钨中杂质的含量，计算得到纯化后六氟化钨的纯度为99.9999％，其中杂质含量见表10，表10为本发明实施例5得到的纯化后六氟化钨中杂质的含量。
表10 本发明实施例5得到的纯化后六氟化钨中杂质的含量
杂质 N2 O2 CO CO2 SF6 SiF4 CF4 MoF6 N2O HF
含量(×10-6) 0.09 0.09 0.05 0.05 0.05 0.05 0.04 0.04 0.04 0.37
由以上实施例可知，本发明提供了一种连续精馏纯化六氟化钨的装置，包括第一流体输送装置1；进料口与所述第一流体输送装置1的出料口相连通的脱轻塔3；所述脱轻塔3的顶部设置有第一抽真空口4；所述脱轻塔的底端设置有第一分析口F1；进料口与所述第一分析口F1相连的第二流体输送装置18；进料口与所述第二流体输送装置18的出料口相连的脱重塔11；所述脱重塔的顶部设置有第二抽真空口12和第二分析口F2。本发明提供的装置包括脱轻塔和脱重塔，首先将待纯化的六氟化钨输送至脱轻塔中进行精馏；再将脱轻塔底部的产物输送至脱重塔进行精馏，然后在脱重塔的顶部收集纯化后的六氟化钨。本发明提供的方法通过控制脱轻塔精馏、脱重塔精馏的条件，以及将脱轻塔底部产物输送至脱重塔的时间、由脱重塔顶部收集纯化后六氟化钨的时间，完成对六氟化钨的纯化。本发明提供的方法得到的六氟化钨具有较高的纯度，可达到99.9999％，且本发明提供的方法操作简单，具有较高的生产效率，极大的降低了生产成本。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种连续精馏纯化六氟化钨的装置，包括：
    第一流体输送装置(1)；
    进料口与所述第一流体输送装置(1)的出料口相连通的脱轻塔(3)；
    所述脱轻塔(3)的顶部设置有第一抽真空口(4)；
    所述脱轻塔(3)的底端设置有第一分析口(F1)；
    进料口与所述第一分析口(F1)相连的第二流体输送装置(18)；
    进料口与所述第二流体输送装置(18)的出料口相连的脱重塔(11)；
    所述脱重塔(11)的顶部设置有第二抽真空口(12)和第二分析口(F2)。
  2. 根据权利要求1所述的装置，其特征在于，所述脱轻塔(3)和脱重塔(11)独立的选自填料精馏塔和板式精馏塔。
  3. 根据权利要求1或2所述的装置，其特征在于，所述脱轻塔(3)为板式精馏塔，所述脱轻塔(3)的塔板数为20～80；
    所述脱重塔(11)为板式精馏塔，所述脱重塔(11)的理论塔板数为20～80。
  4. 根据权利要求1-3任一项所述的装置，其特征在于，所述脱 轻塔(3)的高度为0.5m～15m、直径为0.1m～3m；
    所述脱重塔(11)的高度为0.5m～15m、直径为0.1m～3m。
  5. 根据权利要求1或2所述的装置，其特征在于，所述脱轻塔(3)和脱重塔(11)为填料精馏塔，所述脱轻塔(3)和脱重塔(11)中的填料独立地选自θ环、鲍尔环和拉西环；
    所述填料的直径为1mm～100mm。
  6. 一种连续精馏纯化六氟化钨的方法，包括以下步骤：
    (1)将脱轻塔(3)、与所述脱轻塔(3)相连管路、脱重塔(11)和与所述脱重塔(11)相连的管路抽真空；
    (2)将待纯化的六氟化钨输送至脱轻塔(3)中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏，轻质杂质在所述脱轻塔(3)顶部被采出；
    (3)将所述脱轻塔(3)底部的产物进行分析，待轻质杂质中N2的质量含量≤1.0×10-7、O2的质量含量≤1.0×10-7、CO的质量含量≤5×10-8、CO2的质量含量≤5×10-8、SF6的质量含量≤5×10-8、SiF4的质量含量≤5×10-8、CF4的质量含量≤5×10-8、N2O的质量含量≤5×10-8、HF的质量含量≤5×10-7后，将所述脱轻塔(3)底部的产物输送至脱重塔(11)中，在温度为3℃～50℃、压力为-0.03MPa～0.2MPa的条件下进行精馏；
    (4)将所述脱重塔(11)塔顶的产物进行分析，待其中的轻质杂质MoF6的质量含量≤5×10-8后，在所述脱重塔(11)的塔顶输出纯化后的六氟化钨。
  7. 根据权利要求6所述的方法，其特征在于，所述输送待纯化六氟化钨的温度为3℃～50℃；
    所述输送待纯化六氟化钨的流量为10kg/h～1000kg/h。
  8. 根据权利要求6或7所述的方法，其特征在于，所述脱轻塔(3)中的精馏温度5℃～25℃；
    所述脱轻塔(3)中的精馏压力为-0.01MPa～0.1MPa。
  9. 根据权利要求6-8任一项所述的方法，其特征在于，所述脱重塔(11)中的精馏温度为10℃～30℃；
    所述脱重塔(11)中的精馏压力为-0.01MPa～0.1MPa。
  10. 根据权利要求6-9任一项所述的方法，其特征在于，所述脱轻塔(3)的回流比为1～500；
    所述脱重塔(11)的回流比为0.1～10。
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