WO2015159428A1 - Source linéaire - Google Patents

Source linéaire Download PDF

Info

Publication number
WO2015159428A1
WO2015159428A1 PCT/JP2014/061054 JP2014061054W WO2015159428A1 WO 2015159428 A1 WO2015159428 A1 WO 2015159428A1 JP 2014061054 W JP2014061054 W JP 2014061054W WO 2015159428 A1 WO2015159428 A1 WO 2015159428A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor
steam
substrate
line source
discharge
Prior art date
Application number
PCT/JP2014/061054
Other languages
English (en)
Japanese (ja)
Inventor
鋭司 田尾
文平 田中
真吾 末永
教彰 濱永
Original Assignee
長州産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 長州産業株式会社 filed Critical 長州産業株式会社
Priority to PCT/JP2014/061054 priority Critical patent/WO2015159428A1/fr
Publication of WO2015159428A1 publication Critical patent/WO2015159428A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present invention relates to a line source used in a film forming apparatus for forming a thin film on a substrate.
  • a line source has been used in a film forming apparatus for forming a thin film on a substrate.
  • This line source is formed by arranging a plurality of heating containers containing vapor deposition materials in a line as disclosed in Patent Document 1, for example.
  • Such a line source can shorten the distance between the substrate and the vapor deposition source compared to a point source consisting of a single heating vessel, thereby improving the vapor deposition rate and improving the efficiency of using the vapor deposition material.
  • a point source consisting of a single heating vessel
  • the film formation rate on the substrate is controlled by a method of controlling the amount of steam generated from the crucible by adjusting the heating temperature of the crucible.
  • the amount of vapor (evaporated molecular weight) released toward the substrate cannot be controlled with good followability, so the film formation speed on the substrate, etc. There was a problem that it was not possible to control with high precision.
  • each vapor deposition material is accommodated.
  • This method was performed by adjusting the heating temperature of each crucible and controlling the amount of vapor generated from each crucible.
  • the crucible is discharged toward the substrate. Since the vapor amount (evaporation molecular weight) for each deposited material cannot be controlled with good followability, there is a problem that the deposition rate control for each deposited material in co-evaporation cannot be performed with high accuracy.
  • the deposition amount of evaporated molecules differs between the central portion of the substrate facing the vapor outlet and its peripheral portion, so that a good film thickness distribution can be obtained over the entire thin film. There was a problem that could not. Further, in the conventional line source, the vapor is cooled while moving in the line source and adheres to the inner peripheral wall surface of the line source and the use efficiency of the vapor deposition material is reduced, or the adhered material is peeled off. There is a problem that inconvenience such as generation of particles due to dropping or the like occurs.
  • an object of the present invention is to provide a line source capable of controlling the deposition rate on a substrate with high accuracy.
  • Another object of the present invention is to provide a line source capable of controlling the deposition rate for each deposition material in the co-evaporation with high accuracy.
  • the present invention also provides a line source capable of obtaining a good film thickness distribution in the entire thin film by making the deposition amount of the evaporated molecules uniform between the central portion of the substrate facing the vapor outlet and the peripheral portion thereof. For the purpose.
  • the present invention is because the steam is cooled while moving in the line source and adheres to the inner peripheral wall surface of the line source and the use efficiency of the vapor deposition material is reduced, or the attached material is peeled off.
  • An object of the present invention is to provide a line source capable of preventing inconvenience such as generation of particles.
  • a line source according to the present invention for solving the above-described problems includes a vacuum container in which a substrate to be processed is disposed, and a long, substantially cylindrical body disposed in the vacuum container.
  • a plurality of discharge ports for discharging the vapor of the vapor deposition material from the inside toward the substrate are disposed along a longitudinal direction of the substantially cylindrical body in a portion that is a vapor discharge portion and that faces the substrate.
  • a steam generating section for supplying the steam discharge section through the connecting section;
  • the line source according to the present invention is a vapor discharge section comprising a vacuum container in which a substrate to be processed is disposed, and a long and substantially cylindrical body disposed in the vacuum container, A plurality of discharge ports for releasing vapor of the vapor deposition material from the inside toward the substrate are disposed along a longitudinal direction of the substantially cylindrical body at a portion facing the substrate, and both ends of the substantially cylindrical body
  • a steam discharge section which is airtightly connected to the two steam generation sections described later, and outside the vacuum vessel, respectively, each provided with a crucible and a heating means, and in each crucible
  • the vapor deposition materials contained therein are heated, evaporated or sublimated to generate steam, and the steam is supplied to the steam discharge section through each connection section described later, and the two steam generating sections are mutually connected.
  • each of the plurality of discharge ports of the vapor discharge portion may be formed in a tapered shape whose diameter gradually increases as it approaches the substrate.
  • each of the plurality of discharge ports of the vapor discharge portion has a portion close to the substrate such that a diameter gradually decreases as a portion away from the substrate approaches the substrate. As the diameter approaches the substrate, the diameter gradually increases, and a boundary portion between a portion away from the substrate and a portion close to the substrate (a substantially central portion in a direction orthogonal to the substrate surface in the discharge port) ) May be formed in a constricted shape having a smaller diameter than other portions.
  • a heater disposed so as to face or contact the outer peripheral surface of the vapor discharge portion and an entire outer side of the heater are disposed on the outer peripheral side of the vapor discharge portion.
  • a substantially cylindrical first reflector having a mirror-finished inner peripheral surface, and a substantially cylindrical second reflector disposed so as to cover the entire outer peripheral side of the first reflector. And a second reflector whose inner peripheral surface is mirror-finished.
  • supply of the steam generated in the steam generation part into the steam discharge part is performed via a valve for adjusting the amount of steam supplied from the steam generation part into the steam discharge part. Therefore, it is possible to control the amount of steam supplied from the steam generating part into the steam releasing part with high accuracy only by adjusting the opening of the valve, and as a result, from the steam releasing part.
  • the amount of vapor (evaporated molecular weight) released toward the substrate can be controlled with high accuracy.
  • the steam generated in the steam generating part is converted into one end of a substantially cylindrical body constituting the steam discharge part (a substantially cylindrical body having both ends open from the beginning at the time of manufacture). It is made to supply in the said vapor
  • a mechanism for supplying the steam generated in the steam generating section into the steam discharging section can be manufactured at a lower cost.
  • the supply of the steam generated in the two steam generation units to the steam discharge unit is adjusted, and the amount of the steam supplied from the respective steam generation units to the steam discharge unit is adjusted. Since each operation is performed via a valve, the amount of vapor supplied from the two vapor generation units into the vapor discharge unit can be accurately adjusted for each deposition material simply by adjusting the opening of each valve. As a result, the vapor amount (evaporated molecular weight) released toward the substrate can be controlled with good followability for each vapor deposition material, and the vapor deposition rate for each vapor deposition material in co-evaporation Control can be performed with high accuracy.
  • the vapors of the different vapor materials respectively generated in the two vapor generation units are made into substantially cylindrical bodies constituting the vapor discharge unit (both ends are opened from the beginning at the time of manufacture).
  • the substantially cylindrical body) is supplied into the vapor discharge portion through the end portions at both ends thereof. Therefore, according to the present invention, each of the steam generation parts generated in each of the steam generation parts is simply connected to each end part (each end part opened from the beginning) of the substantially cylindrical body.
  • each of the plurality of discharge ports of the vapor discharge portion is formed in a tapered shape whose diameter gradually increases as it approaches the substrate, vapor discharged from the vapor discharge portion (evaporated molecules) ) Is released while spreading along the inclined surface of the taper, so that vapor (evaporated molecules) is uniformly incident on the substrate over a wide range, so that the film thickness uniformity of the entire thin film can be obtained.
  • each of the plurality of discharge ports of the vapor discharge portion has a diameter that gradually decreases as a portion away from the substrate (a portion close to the inner peripheral surface of the substantially cylindrical body) approaches the substrate.
  • the diameter is gradually increased as the portion close to the substrate approaches the substrate so as to decrease, and the boundary portion between the portion far from the substrate and the portion close to the substrate (the substrate in the discharge port)
  • the vapor to be released from the vapor discharge portion Release is hindered (pressure is applied) at the portion where the diameter in the outlet is a small constriction, and thereafter, the steam is released from a tapered portion where the diameter gradually increases. From the outlet There may ejected to come to reach the effectively the substrate surface deposits.
  • the first reflector that covers the entire outer side of the heater disposed on the outer peripheral side of the steam discharge portion and the second reflector that covers the outer peripheral side of the first reflector are provided with the steam. Since the discharge part is efficiently heated without heat loss, the vapor is cooled while it moves in the line source and adheres to the inner peripheral wall surface of the line source, and the use efficiency of the vapor deposition material is reduced. Inconveniences such as reduction or generation of particles due to peeling off of the adhered material can be effectively prevented.
  • FIG. (A) is a vertical side view showing the configuration of the steam generation unit in the first embodiment
  • (b) is a partial cross-sectional view for explaining the valve in the vertical side view of (a).
  • FIG. 6 is a schematic diagram for explaining the operation of the first embodiment.
  • (A) is a vertical side view which shows the structure of the steam generation part in this Embodiment 2
  • (b) is a partial cross section figure for demonstrating the valve
  • FIG. 1 is a schematic diagram showing a line source according to Embodiment 1 of the present invention.
  • 1 is a vacuum vessel
  • 2 is a substrate placed in the vacuum vessel
  • 3 is a line source body composed of a long, substantially cylindrical body arranged to face the surface of the substrate 2
  • Vapor discharge section 4 is provided at a portion of the line source body 3 facing the substrate 2 and is a discharge port for discharging vapor (evaporated molecules) a in the line source body 3 in the direction of the substrate 2.
  • Vapor discharge section 4 is provided at a portion of the line source body 3 facing the substrate 2 and is a discharge port for discharging vapor (evaporated molecules) a in the line source body 3 in the direction of the substrate 2.
  • Is a steam generating part that generates steam a of a steam material and supplies the steam source a from one end 3a of the line source body 3 into the line source body 3.
  • a steam generation unit 5 arranged outside the vacuum vessel 1 is connected to a valve (described later) at one end 3 a of a line source body 3 in the vacuum vessel 1. Through an airtight connection.
  • FIG. 2 is a perspective view showing an example of the line source body 3.
  • the line source main body 3 according to the first embodiment is made of a substantially cylindrical body made of metal, and one end 3 a thereof is opened so as to be connected to the steam generating unit 5. The other end is closed by a cap 6.
  • a heater (not shown) is provided on the outer peripheral surface of the line source body 3. By heating the line source body 3 with this heater, the steam supplied from the steam generator 5 is cooled while moving in the line source body 3, and the inner wall surface of the line source body 3 is cooled. It is intended to prevent adhesion and accumulation.
  • FIG. 3A is a longitudinal side view showing the configuration of the steam generator 5, and FIG. 3B is a partial cross-sectional view for explaining the valve 33 in FIG. 3A.
  • 3 has a configuration similar to that of the molecular beam source cell for thin film deposition shown in Japanese Patent No. 4673190 related to the applicant's application.
  • the vapor generating unit 5 includes a crucible 31 that stores the vapor deposition material a, a heater 32 that heats the vapor deposition material a in the crucible 31, and the crucible 31 that is heated by the heater 32.
  • evaporation material and “vapor of vapor deposition material” may be described with the symbol a.
  • the valve 33 is for leaking or stopping the vapor of the vapor deposition material a released from the crucible 31 or controlling the amount thereof.
  • the valve 33 is a needle valve having a sharp needle 34 and a valve seat 35 having a vapor deposition passage hole 38 (see FIG. 3B).
  • the needle 34 is linearly moved in the direction of its own central axis by a servo motor 36 and a bellows 37.
  • FIG. 3 (b) is an enlarged view of the portion indicated by A in FIG. 3 (a).
  • a steam passage hole 38 is formed in the valve seat 35.
  • the steam passage hole 38 is closed when the tip of the needle 34 is fitted into the steam passage hole 38 of the valve seat 35, or the tip of the needle 34 is closed with the steam passage hole 38.
  • the steam passage hole 38 is opened by moving away from.
  • the flow path of the vapor is closed or the cross-sectional area of the flow path is adjusted according to the degree to which the tip of the needle 34 is fitted.
  • FIG. 3B shows a state in which the tip of the needle 34 is fitted in the steam passage hole 38 of the valve seat 35 and closes the valve seat passage hole 38 (the state in which the valve 33 is closed). Yes.
  • FIG. 4 is a schematic diagram showing the operation of the first embodiment.
  • the line source main body 3 in the vacuum vessel 1 and the steam generation unit 5 arranged outside the vacuum vessel 1 are connected via a flow path 30 and a valve 33.
  • the opening of the valve 33 By adjusting the opening of the valve 33 (without performing fine heating control on the crucible), the supply amount of the steam from the steam generating unit 5 into the line source body 3 can be increased with good followability. The accuracy can be controlled.
  • the supply of the steam a generated in the steam generation unit 5 to the line source body 3 is performed via the valve 33 disposed in the flow path 30. Therefore, it is possible to control the amount of the steam a supplied from the steam generating unit 5 into the line source body 3 with high follow-up and high accuracy only by adjusting the opening of the valve 33. As a result, the vapor amount (evaporated molecular weight) released from the vapor discharge part 5 toward the substrate 2 is controlled with good followability, and the film forming speed on the substrate 2 is controlled with high accuracy. Will be able to.
  • one end 3 a of the line source main body 3 in the vacuum vessel 1 and the steam generation unit 5 are connected in an airtight manner via the flow path 30 and the valve 33. Yes.
  • the vapor a of the vapor deposition material generated in the vapor generation unit 5 is transferred to the line source main body 3 (substantially cylindrical body whose both ends are open at the time of manufacture).
  • the line source body 3 is supplied through one end 3a. Therefore, according to the first embodiment, the steam generation unit 5 is simply connected to one end 3a (the end that is open from the beginning) of the cylindrical body that constitutes the line source body 3.
  • a mechanism for supplying the steam a generated in the generation unit 5 into the line source body 3 can be manufactured, for example, a hole is formed in the central portion of the cylindrical body constituting the line source body and the hole is formed from the hole. Compared with the case where the steam generated in the steam generating part is supplied (in this case, the operation of forming the hole in the central part of the cylindrical body is required), the steam a generated in the steam generating part 5 is reduced.
  • the mechanism for supplying the line source body 3 can be manufactured at a lower cost.
  • FIG. 5 is a schematic diagram showing a configuration of a line source according to Embodiment 2 of the present invention.
  • the same reference numerals as those in FIG. As shown in FIG. 5, in the second embodiment, the steam generators 5 and 6 are airtightly connected to both ends 3 a and 3 b of the line source main body 3 (substantially cylindrical body), respectively. .
  • the second embodiment is suitable for use in co-evaporation in which vapors a and b of a plurality of types of vapor deposition materials are deposited on one substrate.
  • evaporation material and “vapor of vapor deposition material” may be described with reference numerals a and b.
  • FIG. 6A is a longitudinal side view showing the configuration of the steam generator 6, and FIG. 6B is a partial cross-sectional view for explaining the valve 43 in FIG. 6A.
  • the vapor generating section 6 shown in FIG. 6 has a configuration similar to that of the molecular beam source cell for thin film deposition shown in Japanese Patent No. 4673190 related to the applicant's application.
  • the steam generation unit 6 is heated by the crucible 41 that contains the vapor deposition material b, the heater 42 that heats the vapor deposition material b in the crucible 41, and the heater 42.
  • the valve 43 is a needle valve having a sharp needle 44 and a valve seat 45 having a vapor deposition passage hole 48 (see FIG. 6B).
  • a servo motor 46 and a bellows 47 In the vapor deposition passage hole 48 of the valve seat 45, when the tip of the needle 44 is fitted, the flow path of the vapor is closed or the cross-sectional area of the flow path is adjusted.
  • the needle 44 is linearly moved in the direction of its central axis by a servo motor 46 and a bellows 47.
  • FIG. 6B is an enlarged view of the portion indicated by B in FIG.
  • the tip of the needle 44 is fitted into the steam passage hole 48 of the valve seat 45 by the linear movement of the needle 44, whereby the steam passage hole 48 is closed, or When the tip of the needle 44 is separated from the steam passage hole 48, the steam passage hole 48 is opened.
  • FIG. 6B shows a state in which the tip of the needle 44 is fitted in the steam passage hole 48 of the valve seat 45 to close the valve seat passage hole 48 (the valve 43 is closed). Is shown.
  • the vapors a and b of the vapor deposition materials respectively generated in the vapor generation units 5 and 6 are arranged in the flow paths 30 and 40 and in the flow paths 30 and 40, respectively.
  • the line source body 3 is supplied through the valves 33 and 43.
  • the vapor amount of the main vapor deposition material a generated by the vapor generation unit 5 is supplied while being controlled by adjusting the opening of the valve 33, and the vapor generation unit 6
  • the vapor generation unit 6 By simply supplying the vapor amount of the vapor deposition material b as a subcomponent such as dopant generated while controlling the opening of the valve 43 while adjusting the opening of the valves 33 and 43 (the crucible) (Without controlling the heating temperature), the deposition rate for each of the plurality of types of deposition materials a and b can be controlled with high accuracy.
  • one of the two steam generators 5, 6 is connected to the flow path 30 and the valve 33 (on the one end 3 a of the line source body 3. 3), the other steam generation part 6 of the two steam generation parts is connected to the other end 3b of the line source body 3 with the flow path 40 and The valve 43 (see FIG. 6) is connected in an airtight manner.
  • the vapors a and b of the vapor deposition materials respectively generated in the vapor generation units 5 and 6 are transferred to the end portions 3a and 3b of the line source body 3 (from the beginning at the time of manufacture). Each line source body 3 is supplied via each open end).
  • the steam generators 5 and 6 are respectively connected to both end portions 3a and 3b (both end portions opened from the beginning) of the cylindrical body constituting the line source main body 3.
  • the mechanism for supplying the steam a and b generated in the steam generators 5 and 6 into the line source main body 3 can be manufactured, for example, the cylindrical body constituting the line source main body.
  • the mechanism for supplying the steam a and b generated in the steam generators 5 and 6 into the line source body 3 at a lower cost than the operation of forming two holes). can be manufactured.
  • FIG. 7 is a partial cross-sectional view showing a line source main body according to Embodiment 3 of the present invention.
  • the plurality of discharge ports 12 formed in the portion of the line source main body 11 facing the substrate 2 are tapered so that the diameter gradually increases as they approach the substrate 2 as shown in FIG. Is formed.
  • the vapor introduced into the line source main body 11 and released from the line source main body 11 in the direction of the substrate 2 diffuses along the inclined surface 12a inside the tapered discharge port 12. Since the emission port 12 is uniformly incident not only on the central portion of the substrate 2 facing the discharge port 12 but also on the peripheral portion thereof, the uniformity of the film thickness of the entire thin film formed on the substrate 2 is improved. Can be improved.
  • FIG. 8 is a partial cross-sectional view showing a line source body according to Embodiment 4 of the present invention.
  • a plurality of discharge ports 14 formed in a portion of the line source body 13 facing the substrate 2 are formed by discharge port forming portions 14 a fixed to the line source body 13.
  • the diameter of each discharge port 14 gradually decreases as the lower portion of the drawing (the portion away from the substrate 2, see reference numeral 14 b in FIG. 8) approaches the substrate 2.
  • the upper portion of the figure the portion close to the substrate 2; see reference numeral 14d in FIG.
  • a boundary portion between a portion away from the substrate and a portion close to the substrate (a substantially central portion in the direction perpendicular to the surface of the substrate 2 in the discharge port 14; see reference numeral 14c in FIG. 8) has a different diameter. It is formed so as to have a constriction shape smaller than the portion.
  • the vapor that is supplied into the line source main body 13 and is released from the main body 2 toward the substrate 2 is separated from the lower portion of the discharge port 14 shown in the figure (separated from the substrate 2).
  • the discharge port 14 is diffused along the inclined surface 14d inside the upper portion of the figure (portion close to the substrate 2), and not only in the central portion of the substrate 2 facing the discharge port 12 but also in its peripheral portion. Since the light is uniformly incident, the efficiency of forming a thin film on the substrate 2 can be improved, and the uniformity of the thickness of the entire thin film formed on the substrate 2 can be improved. I can do it .
  • FIG. 9 is a partial cross-sectional view schematically showing the configuration of the line source main body and its peripheral portion in Embodiment 5 of the present invention.
  • reference numeral 21 denotes a heater arranged so as to face or contact the outer peripheral surface of the line source body 3 (see FIG. 1 or the like) with a minute gap
  • 22 denotes the heater 21 with a minute gap.
  • a substantially cylindrical metal reflector 23 is disposed so as to cover the outer peripheral side of the heater 21.
  • a substantially cylindrical metal reflector 23 is disposed so as to cover the outer peripheral surface side of the reflector 22 with a small distance from the reflector 22.
  • a metallic reflector 24 is a substantially cylindrical metallic reflector disposed so as to cover the outer peripheral surface side of the reflector 23 with a minute distance from the reflector 23.
  • the distance between the heater 21 and the reflector 22 and the distance between the reflectors 22 and 23 and the reflectors 23 and 24 on the outer periphery thereof are, for example, about 0.2 to 1.0 mm.
  • the thickness of each said reflector 22,23,24 is about 0.1 mm, for example.
  • the inner peripheral wall surfaces 22a, 23a, 24a of the reflectors 22, 23, 24 are mirror-finished so as to efficiently reflect infrared rays.
  • the outer peripheral side of the heater 21 is covered with the reflectors 22, 23, 24 having a circular cross section having the same center, and the reflectors 22, 23 are covered.
  • 24 is mirror-finished so that the heat radiated from the heater 21 in the outer peripheral direction is reflected by the reflector 22 on the outer peripheral side toward the heater 21 and passes through the reflector 22.
  • the heat is reflected in the direction of the heater 21 by the reflector 23 on the outer peripheral side, and the heat that has passed through the reflector 23 is reflected in the direction of the heater 21 by the reflector 24 on the outer peripheral side. So that the line source body 3 can be heated efficiently with extremely little heat loss from Steam on the inner peripheral wall surface of the line source body 3 is attached, it becomes possible to effectively prevent the depositing.
  • the needle valves 33 and 43 are used as valves for controlling the amount of steam supplied from the steam generating unit 5 to the line source body 3.
  • Other types of valves may be used.
  • three reflectors 22, 23, and 24 are used. However, it is possible to use a larger number of reflectors.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne une source linéaire qui peut contrôler avec une très grande précision, dans la formation de film, une vitesse ou analogue de formation d'un film sur un substrat, et un taux de dépôt en phase vapeur ou analogue par chaque matériau de dépôt en phase vapeur en co-dépôt. Une source linéaire de la présente invention comporte : un récipient sous vide; une section d'évacuation de vapeur, qui est conçue à partir d'un corps allongé sensiblement cylindrique qui est disposé dans le récipient sous vide, et qui comprend à l'intérieur de ce dernier une pluralité d'orifices d'évacuation dans la direction longitudinale, lesdits orifices d'évacuation évacuant de la vapeur dans la direction du substrat à partir de l'intérieur; une section de génération de vapeur, qui est disposée à l'extérieur du récipient sous vide, et qui fournit de la vapeur à l'intérieur de la section d'évacuation de vapeur, ladite vapeur ayant été produite par chauffage d'un matériau de dépôt en phase vapeur contenu dans un creuset; et une section de liaison, qui relie hermétiquement la section de génération de vapeur et une partie d'extrémité de la section d'évacuation de vapeur entre elles, et qui comporte une soupape pour réguler une quantité de la vapeur devant être fournie à l'intérieur de la section d'évacuation de vapeur à partir de la section de génération de vapeur.
PCT/JP2014/061054 2014-04-18 2014-04-18 Source linéaire WO2015159428A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/061054 WO2015159428A1 (fr) 2014-04-18 2014-04-18 Source linéaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/061054 WO2015159428A1 (fr) 2014-04-18 2014-04-18 Source linéaire

Publications (1)

Publication Number Publication Date
WO2015159428A1 true WO2015159428A1 (fr) 2015-10-22

Family

ID=54323665

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/061054 WO2015159428A1 (fr) 2014-04-18 2014-04-18 Source linéaire

Country Status (1)

Country Link
WO (1) WO2015159428A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108060392A (zh) * 2017-12-14 2018-05-22 深圳先进技术研究院 一种可控线性蒸发装置及镀膜方法
WO2020082282A1 (fr) * 2018-10-25 2020-04-30 China Triumph International Engineering Co., Ltd. Appareil de dépôt en phase vapeur et utilisation de celui-ci

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293368A (ja) * 1985-10-17 1987-04-28 Mitsubishi Electric Corp 蒸発源
JP2006152440A (ja) * 2004-11-26 2006-06-15 Samsung Sdi Co Ltd 蒸発源及びこれを備えた蒸着装置
WO2011074551A1 (fr) * 2009-12-18 2011-06-23 平田機工株式会社 Procédé de dépôt sous vide et appareil de dépôt sous vide
JP2011132596A (ja) * 2009-12-22 2011-07-07 Samsung Mobile Display Co Ltd 蒸発源及びそれを用いた蒸着装置
WO2012056877A1 (fr) * 2010-10-29 2012-05-03 シャープ株式会社 Procédé de dépôt en phase vapeur, appareil de dépôt en phase vapeur, et dispositif d'affichage électroluminescent (el) organique
JP2012117114A (ja) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp 蒸着装置
WO2012086480A1 (fr) * 2010-12-21 2012-06-28 シャープ株式会社 Dispositif et procédé de dépôt en phase vapeur et procédé de fabrication de dispositifs d'affichage électroluminescents organiques

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6293368A (ja) * 1985-10-17 1987-04-28 Mitsubishi Electric Corp 蒸発源
JP2006152440A (ja) * 2004-11-26 2006-06-15 Samsung Sdi Co Ltd 蒸発源及びこれを備えた蒸着装置
WO2011074551A1 (fr) * 2009-12-18 2011-06-23 平田機工株式会社 Procédé de dépôt sous vide et appareil de dépôt sous vide
JP2011132596A (ja) * 2009-12-22 2011-07-07 Samsung Mobile Display Co Ltd 蒸発源及びそれを用いた蒸着装置
WO2012056877A1 (fr) * 2010-10-29 2012-05-03 シャープ株式会社 Procédé de dépôt en phase vapeur, appareil de dépôt en phase vapeur, et dispositif d'affichage électroluminescent (el) organique
JP2012117114A (ja) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp 蒸着装置
WO2012086480A1 (fr) * 2010-12-21 2012-06-28 シャープ株式会社 Dispositif et procédé de dépôt en phase vapeur et procédé de fabrication de dispositifs d'affichage électroluminescents organiques

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108060392A (zh) * 2017-12-14 2018-05-22 深圳先进技术研究院 一种可控线性蒸发装置及镀膜方法
CN108060392B (zh) * 2017-12-14 2023-07-18 深圳先进技术研究院 一种可控线性蒸发装置及镀膜方法
WO2020082282A1 (fr) * 2018-10-25 2020-04-30 China Triumph International Engineering Co., Ltd. Appareil de dépôt en phase vapeur et utilisation de celui-ci

Similar Documents

Publication Publication Date Title
KR100780142B1 (ko) 기재의 코팅방법 및 기재에 층을 코팅하기 위한 장치
US10066287B2 (en) Direct liquid deposition
JP6647202B2 (ja) 堆積アレンジメント、堆積装置、及びこれらの操作方法
EP3241923B1 (fr) Source d'évaporation linéaire
KR20080007110A (ko) 증착 장치
JPWO2009034916A1 (ja) 蒸気放出装置、有機薄膜蒸着装置及び有機薄膜蒸着方法
WO2015159428A1 (fr) Source linéaire
JP2008516389A (ja) 有機発光ダイオード蒸着工程用のマルチノズルるつぼ装置
JP3684343B2 (ja) 薄膜堆積用分子線源セル
JP6348790B2 (ja) リング型蒸着源
TW200948993A (en) Evaporator and vacuum deposition apparatus having the same
KR102080764B1 (ko) 리니어소스 및 그를 가지는 박막증착장치
WO2010098308A1 (fr) Dispositif de génération de vapeur de composé organique et dispositif de fabrication d'une membrane organique fine
JP2011094222A (ja) 蒸着装置における蒸発源及び蒸着装置
KR20130043250A (ko) 기상 증착 소스를 위한 정적 폐쇄 밸브
JP2005048244A (ja) 有機物薄膜堆積用分子線源
JP3735287B2 (ja) 真空蒸着装置及び真空蒸着方法
JP2015209559A (ja) 蒸着装置
JP2008156726A (ja) 真空蒸着装置
JP2005281710A (ja) 有機物薄膜堆積用分子線源
KR20140073764A (ko) 증발원용 도가니
KR20150104419A (ko) Oled 증착기 소스의 노즐구조
JP2019179903A (ja) 薄膜製造方法、および基板
JP2011021264A (ja) 成膜装置
JP2005133122A (ja) 成膜装置および成膜方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14889663

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14889663

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP