JP2008156726A - 真空蒸着装置 - Google Patents
真空蒸着装置 Download PDFInfo
- Publication number
- JP2008156726A JP2008156726A JP2006348641A JP2006348641A JP2008156726A JP 2008156726 A JP2008156726 A JP 2008156726A JP 2006348641 A JP2006348641 A JP 2006348641A JP 2006348641 A JP2006348641 A JP 2006348641A JP 2008156726 A JP2008156726 A JP 2008156726A
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- Japan
- Prior art keywords
- opening
- evaporation source
- deposition
- cylindrical body
- vaporized
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】真空チャンバー1内に蒸発源2と被蒸着体3とを配置すると共に蒸発源2と被蒸着体3の間の空間を蒸発源2の物質が気化される温度で加熱された筒状体4で囲み、蒸発源2から気化した物質9を筒状体4内を通して被蒸着体3の表面に到達させて蒸着させるようにした真空蒸着装置に関する。蒸発源2から気化した物質9を開口部5を通過させた後に筒状体4内を通して被蒸着体の表面に到達させるようにする。そして開口部5の開口度を調整可能な開閉手段6と、蒸発源2から気化した物質9を蒸着させてその蒸着厚みを計測する蒸着厚み計測手段7と、蒸着厚み計測手段7で計測される蒸着厚みに応じて開閉手段6の開口度を調整する開閉制御手段8とを備える。
【選択図】図1
Description
2 蒸発源
3 被蒸着体
4 筒状体
5 開口部
6 開閉手段
7 蒸着厚み計測手段
8 開閉制御手段
9 気化物質
Claims (1)
- 真空チャンバー内に蒸発源と被蒸着体とを配置すると共に蒸発源と被蒸着体の間の空間を蒸発源の物質が気化される温度で加熱された筒状体で囲み、蒸発源から気化した物質を筒状体内を通して被蒸着体の表面に到達させて蒸着させるようにした真空蒸着装置において、蒸発源から気化した物質を開口部を通過させた後に筒状体内を通して被蒸着体の表面に到達させるようにし、この開口部の開口度を調整可能な開閉手段と、開口部と被蒸着体との間に配置され、蒸発源から気化した物質を蒸着させてその蒸着厚みを計測する蒸着厚み計測手段と、蒸着厚み計測手段で計測される蒸着厚みに応じて開閉手段の開口度を調整する開閉制御手段とを備えて成ることを特徴とする真空蒸着装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006348641A JP5180469B2 (ja) | 2006-12-25 | 2006-12-25 | 真空蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006348641A JP5180469B2 (ja) | 2006-12-25 | 2006-12-25 | 真空蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008156726A true JP2008156726A (ja) | 2008-07-10 |
JP5180469B2 JP5180469B2 (ja) | 2013-04-10 |
Family
ID=39657963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006348641A Expired - Fee Related JP5180469B2 (ja) | 2006-12-25 | 2006-12-25 | 真空蒸着装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5180469B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012525495A (ja) * | 2009-04-29 | 2012-10-22 | テバ ドュンシッヒトテヒニク ゲーエムベーハー | 高圧蒸発による高速コーティングのための方法及び装置 |
WO2015073156A1 (en) * | 2013-11-16 | 2015-05-21 | NuvoSun, Inc. | Method for monitoring se vapor in vacuum reactor apparatus |
CN110029311A (zh) * | 2019-03-29 | 2019-07-19 | 新冶高科技集团有限公司 | 一种蒸镀装置及方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223269A (ja) * | 1999-01-28 | 2000-08-11 | Anelva Corp | 有機薄膜形成装置 |
JP2004059982A (ja) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Works Ltd | 真空蒸着方法 |
JP2004307877A (ja) * | 2003-04-02 | 2004-11-04 | Nippon Biitec:Kk | 薄膜堆積用分子線源とそれを使用した薄膜堆積方法 |
JP2005082872A (ja) * | 2003-09-10 | 2005-03-31 | Tokki Corp | 蒸着装置並びに蒸着方法 |
JP2005298926A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi Zosen Corp | 蒸着装置 |
JP2006274370A (ja) * | 2005-03-30 | 2006-10-12 | Hitachi Zosen Corp | 蒸着装置 |
-
2006
- 2006-12-25 JP JP2006348641A patent/JP5180469B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223269A (ja) * | 1999-01-28 | 2000-08-11 | Anelva Corp | 有機薄膜形成装置 |
JP2004059982A (ja) * | 2002-07-26 | 2004-02-26 | Matsushita Electric Works Ltd | 真空蒸着方法 |
JP2004307877A (ja) * | 2003-04-02 | 2004-11-04 | Nippon Biitec:Kk | 薄膜堆積用分子線源とそれを使用した薄膜堆積方法 |
JP2005082872A (ja) * | 2003-09-10 | 2005-03-31 | Tokki Corp | 蒸着装置並びに蒸着方法 |
JP2005298926A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi Zosen Corp | 蒸着装置 |
JP2006274370A (ja) * | 2005-03-30 | 2006-10-12 | Hitachi Zosen Corp | 蒸着装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012525495A (ja) * | 2009-04-29 | 2012-10-22 | テバ ドュンシッヒトテヒニク ゲーエムベーハー | 高圧蒸発による高速コーティングのための方法及び装置 |
WO2015073156A1 (en) * | 2013-11-16 | 2015-05-21 | NuvoSun, Inc. | Method for monitoring se vapor in vacuum reactor apparatus |
CN105765101A (zh) * | 2013-11-16 | 2016-07-13 | 纽升股份有限公司 | 用于监测真空反应器设备中的硒蒸气的方法 |
CN110029311A (zh) * | 2019-03-29 | 2019-07-19 | 新冶高科技集团有限公司 | 一种蒸镀装置及方法 |
CN110029311B (zh) * | 2019-03-29 | 2022-03-18 | 新冶高科技集团有限公司 | 一种蒸镀装置及方法 |
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JP5180469B2 (ja) | 2013-04-10 |
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