JP2005082872A - 蒸着装置並びに蒸着方法 - Google Patents
蒸着装置並びに蒸着方法 Download PDFInfo
- Publication number
- JP2005082872A JP2005082872A JP2003318650A JP2003318650A JP2005082872A JP 2005082872 A JP2005082872 A JP 2005082872A JP 2003318650 A JP2003318650 A JP 2003318650A JP 2003318650 A JP2003318650 A JP 2003318650A JP 2005082872 A JP2005082872 A JP 2005082872A
- Authority
- JP
- Japan
- Prior art keywords
- organic material
- vapor deposition
- container
- substrate
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000011368 organic material Substances 0.000 claims abstract description 91
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000001704 evaporation Methods 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 47
- 238000000151 deposition Methods 0.000 claims description 33
- 239000000356 contaminant Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 238000010549 co-Evaporation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 description 26
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZNJRONVKWRHYBF-VOTSOKGWSA-N 4-(dicyanomethylene)-2-methyl-6-julolidyl-9-enyl-4h-pyran Chemical compound O1C(C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(CCCN2CCC3)=C2C3=C1 ZNJRONVKWRHYBF-VOTSOKGWSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- APLQAVQJYBLXDR-UHFFFAOYSA-N aluminum quinoline Chemical compound [Al+3].N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12.N1=CC=CC2=CC=CC=C12 APLQAVQJYBLXDR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】 真空槽内に、有機材料1を充填した容器3を設けると共に、この容器3の開口部と対向する位置に基板6を設け且つ前記容器3と前記基板6との間の空間を囲繞する加熱壁5を設けて、この加熱壁5を前記有機材料1の蒸発温度程度に加熱しながら前記容器3を加熱して基板6に前記有機材料1を蒸着することで基板6上に有機薄膜4を成膜する蒸着装置において、容器3に、粒状で且つ所定の熱伝導率を有する混入物2を多数混入した有機材料1を充填したものである。
【選択図】 図1
Description
2 混入物
3 容器
4 有機薄膜
5 加熱壁
6 基板
Claims (6)
- 真空槽内に、有機材料を充填した容器を設けると共に、この容器の開口部と対向する位置に基板を設け且つ前記容器と前記基板との間の空間を囲繞する加熱壁を設けて、この加熱壁を前記有機材料の蒸発温度程度に加熱しながら前記容器を加熱して基板に前記有機材料を蒸着することで基板上に有機薄膜を成膜する蒸着装置において、容器に、粒状で且つ所定の熱伝導率を有する混入物を多数混入した有機材料を充填したことを特徴とする蒸着装置。
- 前記混入物として、金属,セラミックス若しくはセラミックスを被覆した金属のうち少なくとも一つを有機材料に混入したことを特徴とする請求項1記載の蒸着装置。
- 前記有機材料として、有機EL素子の形成に用いられる有機EL材料を採用したことを特徴とする請求項1,2のいずれか1項に記載の蒸着装置。
- 前記真空槽内に容器を複数設け、この容器を、ホスト材料とゲスト材料とを同時に蒸発させ、基板上に任意の割合で混合し得る共蒸着法の蒸発源に設定したことを特徴とする請求項1〜3のいずれか1項に記載の蒸着装置。
- 前記請求項1〜4のいずれか1項に記載の蒸着装置を用いて有機材料を蒸着する際、容器若しくは有機材料の温度を制御することで前記有機材料の蒸着レートを制御することを特徴とする蒸着方法。
- 前記請求項4記載の蒸着装置を用いて有機材料を蒸着する際、共蒸着源に設定した前記容器から蒸発するホスト材料若しくはゲスト材料の蒸着レートのいずれか一方を前記水晶振動子式レートモニターにより制御し、他方を前記容器若しくは有機材料の温度により制御することを特徴とする蒸着方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003318650A JP4435523B2 (ja) | 2003-09-10 | 2003-09-10 | 蒸着方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003318650A JP4435523B2 (ja) | 2003-09-10 | 2003-09-10 | 蒸着方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005082872A true JP2005082872A (ja) | 2005-03-31 |
JP4435523B2 JP4435523B2 (ja) | 2010-03-17 |
Family
ID=34417875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003318650A Expired - Lifetime JP4435523B2 (ja) | 2003-09-10 | 2003-09-10 | 蒸着方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4435523B2 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008156726A (ja) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | 真空蒸着装置 |
JP2008156724A (ja) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | 真空蒸着装置 |
JP2008169456A (ja) * | 2007-01-15 | 2008-07-24 | Matsushita Electric Works Ltd | 真空蒸着装置 |
KR101015277B1 (ko) * | 2008-12-10 | 2011-02-15 | 삼성모바일디스플레이주식회사 | 증발원 |
JP2011246786A (ja) * | 2010-05-28 | 2011-12-08 | Optorun Co Ltd | 有機膜形成用蒸着材料 |
JP2013108137A (ja) * | 2011-11-21 | 2013-06-06 | Panasonic Corp | インライン型蒸着装置 |
JP2014114491A (ja) * | 2012-12-11 | 2014-06-26 | Yuutekku:Kk | 蒸着源及び蒸着装置 |
JP2015086451A (ja) * | 2013-10-31 | 2015-05-07 | 株式会社アルバック | 蒸発装置、成膜装置 |
-
2003
- 2003-09-10 JP JP2003318650A patent/JP4435523B2/ja not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008156726A (ja) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | 真空蒸着装置 |
JP2008156724A (ja) * | 2006-12-25 | 2008-07-10 | Matsushita Electric Works Ltd | 真空蒸着装置 |
JP2008169456A (ja) * | 2007-01-15 | 2008-07-24 | Matsushita Electric Works Ltd | 真空蒸着装置 |
KR101015277B1 (ko) * | 2008-12-10 | 2011-02-15 | 삼성모바일디스플레이주식회사 | 증발원 |
US8366831B2 (en) | 2008-12-10 | 2013-02-05 | Samsung Display Co., Ltd. | Evaporation source |
JP2011246786A (ja) * | 2010-05-28 | 2011-12-08 | Optorun Co Ltd | 有機膜形成用蒸着材料 |
JP2013108137A (ja) * | 2011-11-21 | 2013-06-06 | Panasonic Corp | インライン型蒸着装置 |
JP2014114491A (ja) * | 2012-12-11 | 2014-06-26 | Yuutekku:Kk | 蒸着源及び蒸着装置 |
JP2015086451A (ja) * | 2013-10-31 | 2015-05-07 | 株式会社アルバック | 蒸発装置、成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4435523B2 (ja) | 2010-03-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100805531B1 (ko) | 증발원 | |
KR101263005B1 (ko) | 증착 장치 및 방법 | |
US7339139B2 (en) | Multi-layered radiant thermal evaporator and method of use | |
EP1803836B1 (en) | Evaporation source and method of depositing thin film using the same | |
CN100513629C (zh) | 薄膜沉积用分子束源装置和分子束沉积薄膜的方法 | |
TWI396758B (zh) | Vacuum evaporation method and device for organic material | |
KR101256101B1 (ko) | 가열 장치, 코팅 설비 및 코팅 재료의 증착 또는 승화 방법 | |
JP2019523345A (ja) | 真空蒸着のための装置および方法 | |
EP0553228B1 (en) | Vapour deposition apparatus and method | |
JP2003513169A (ja) | 真空で基板を被覆するための方法及び装置 | |
JP5237088B2 (ja) | 粉末材料または粒状材料の制御可能な供給 | |
JP4435523B2 (ja) | 蒸着方法 | |
TWI447246B (zh) | 真空蒸鍍裝置 | |
JP3929397B2 (ja) | 有機el素子の製造方法及び装置 | |
JP4090039B2 (ja) | 蒸着装置における蒸発源 | |
KR101284394B1 (ko) | 박막 퇴적용 분자선원과 그 분자선량 제어방법 | |
JP4519653B2 (ja) | 被覆材料を蒸着する装置及び方法 | |
EP3725911A1 (en) | Source arrangement, deposition apparatus and method for depositing source material | |
KR101846692B1 (ko) | 스피팅 방지 구조체를 구비한 증착장치용 증발원 | |
JP2003095787A (ja) | 薄膜堆積用分子線源セル | |
JP2004211110A (ja) | 蒸着用るつぼ、蒸着装置および蒸着方法 | |
KR100677908B1 (ko) | 유기물 증착장치의 도가니 및 이를 장착한 유기물 증착장치 | |
KR20040032737A (ko) | 증착장치에서의 유기재료용 증발원 및 그 증착장치 | |
US7369758B2 (en) | Molecular beam source for use in accumulation of organic thin-films | |
JP3745724B2 (ja) | 昇華性材料の蒸着用ルツボおよび該ルツボを使用した蒸着方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060911 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090420 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091126 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091224 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4435523 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130108 Year of fee payment: 3 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130108 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130108 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |