WO2015143942A1 - 一种低蚀刻的去除光阻蚀刻残留物的清洗液 - Google Patents

一种低蚀刻的去除光阻蚀刻残留物的清洗液 Download PDF

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WO2015143942A1
WO2015143942A1 PCT/CN2015/071538 CN2015071538W WO2015143942A1 WO 2015143942 A1 WO2015143942 A1 WO 2015143942A1 CN 2015071538 W CN2015071538 W CN 2015071538W WO 2015143942 A1 WO2015143942 A1 WO 2015143942A1
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Prior art keywords
cleaning solution
mass
ether
acid
solution according
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PCT/CN2015/071538
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English (en)
French (fr)
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何春阳
刘兵
孙广胜
黄达辉
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安集微电子科技(上海)有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/22—Light metals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention discloses a low etch cleaning fluid that removes photoresist residues.
  • the application, exposure and imaging of the photoresist layer are necessary process steps for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (ie, after coating, imaging, ion implantation, and etching of the photoresist layer).
  • dozens of photolithography processes are used in the process of a semiconductor device. Due to the complex chemical reaction with the photoresist caused by ions and radicals of the plasma etching gas, the photoresist is rapidly hardened and crosslinked with the inorganic material, so that the photoresist The layer becomes less soluble and thus more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step utilizes dry ashing to remove most of the photoresist layer (PR);
  • the second step uses the corrosion inhibitor composition wet etch/clean process to remove and clean the remaining photoresist layer, typically in the form of a cleaning solution. / rinse / dry. Only the residual polymer photoresist layer and inorganic matter can be removed in this process, and the damage to the metal layer such as the aluminum layer cannot be attacked.
  • the most used cleaning liquid is a cleaning liquid containing hydroxylamines and fluorine-containing cleaning liquids.
  • Typical patents of hydroxylamine cleaning liquids are US6319885, US5672577, US6030932, US6825156, US5419779 and US6777380B2.
  • US598145A discloses an acidic cleaning solution containing an organic acid and an alkanolamine having a pH of 3.5-7, which is capable of quickly removing the photoresist of the metal layer and the conductive medium layer.
  • US 6,103,680 A discloses a cleaning solution containing a low alkyl chain hydroxy hydrazine, water, a carboxylic acid compound and a water-soluble organic solvent which is substantially non-corrosive to the metal and which is effective in removing the plasma-etched residue.
  • This kind of cleaning solution containing neither hydroxylamine nor fluoride can solve the problem of single source and safety and environmental protection of hydroxylamine, and solve the problem of unstable corrosion rate of non-metal of fluorine-containing cleaning liquid.
  • cleaning fluids often have great limitations in their use.
  • cleaning fluid compositions have been disclosed, there is a need and a greater need to prepare such a cleaning fluid that is more versatile.
  • the object of the present invention is to provide a low-cost semiconductor wafer cleaning solution capable of removing photoresist residue on a wafer, which does not contain hydroxylamine and fluoride; has a low corrosion rate to metals and nonmetals; The device is compatible.
  • the new cleaning solution contains:
  • Alcoholamine the specific content of the alcohol amine is 20-70% by mass, preferably 20-60%;
  • an alcohol ether the specific content of the alcohol ether is 1-50% by mass; preferably 1-40%;
  • water specific content is less than 40% by mass, preferably 1-35%;
  • the specific content of the chelating agent is 0.1-10% by mass, preferably 0.5-10%;
  • v. Hydrazine and its derivatives are specifically contained in an amount of 0.1 to 15% by mass, preferably 0.2 to 10% by mass.
  • the alcohol amine is preferably monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N,N-diethylethanolamine, N-( One or more of 2-aminoethyl)ethanolamine and diglycolamine.
  • the addition of an alcohol amine helps to completely remove the photoresist of the wafer. the remains.
  • the alcohol ether is preferably a diethylene glycol monoalkyl ether and/or a dipropylene glycol monoalkyl ether.
  • the diethylene glycol monoalkyl ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; the dipropylene glycol monoalkyl ether is compared Preferred are dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether.
  • the alcohol ether is preferably a dipropylene glycol monoalkyl ether, more preferably one or more of dipropylene glycol monomethyl ether.
  • the alcohol ether has a better cleaning effect than a common organic solvent such as dimethyl sulfoxide, N-methylpyrrolidone or the like.
  • the chelating agent is preferably catechol, gallic acid, p-hydroxybenzoic acid, pyrogallol, 5-methoxy pyrogallol, 5-tert-butyl pyrogallol, 5 - hydroxymethyl pyrogallol, ethylenediaminetetraacetic acid, trans-1,2-cyclohexanediaminetetraacetic acid, ethylene glycol bis(2-aminoethyl)tetraacetic acid, citric acid, succinic acid, lactic acid, One or more of tartaric acid, methyl gallate, and 1-gallate glyceride.
  • the hydrazine and its derivatives are preferably hydrazine hydrate, benzoyl hydrazide, hydrazine hydrate, cesium carbonate, salicyl hydrazide, oxalyl dihydrazide, succinic acid dihydrazide, adipic acid diacyl.
  • hydrazine, malonyl hydrazide, p-mercaptobenzoic acid, and hydrazine acetate is beneficial to inhibit the corrosion of metals such as aluminum; the addition of ruthenium and its derivatives can also facilitate the complete removal of photoresist residues on the wafer.
  • the water may preferably be deionized water, distilled water, ultrapure water, or water which removes impurity ions by other means.
  • the cleaning liquid of the invention has no fluoride and hydroxylamine, and thus has the advantages of safer and more stable use and milder effect than the conventional cleaning liquid.
  • the photoresist residue on the wafer can be cleaned at 50 ° C to 80 ° C.
  • the specific method is as follows: the wafer containing the photoresist residue is immersed in the cleaning liquid in the present invention, and immersed at 50 ° C to 80 ° C for a suitable period of time, taken out and rinsed, and then blown dry with high-purity nitrogen gas.
  • the cleaning liquid of the present invention can realize the metal to the metal while effectively removing the photoresist residues on the metal, via and pad wafers by using ruthenium and its derivatives. Aluminum and non-gold It is a suppression of corrosion.
  • the cleaning solution of the invention solves the problems of single source, high price and easy explosion of hydroxylamine in the traditional hydroxylamine cleaning solution;
  • the cleaning liquid of the invention has low non-metal corrosion rate; solves the problem of unstable non-metal corrosion rate of the conventional fluorine-based cleaning liquid, and is compatible with the quartz cleaning tank commonly used by semiconductor manufacturers.
  • the reagents and starting materials used in the present invention are commercially available.
  • the cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.
  • the present invention adopts the following technical means: a metal wafer, a via wafer, and a metal pad wafer containing a photoresist residue, respectively.
  • a metal wafer, a via wafer, and a metal pad wafer containing a photoresist residue respectively.
  • Immerse in the cleaning solution oscillate at 50 ° C to 80 ° C for 10 to 30 minutes at a vibration frequency of about 60 rpm using a constant temperature oscillator, then rinse with a high purity nitrogen gas after washing.
  • the cleaning effect of the photoresist residue and the corrosion of the cleaning solution on the wafer are shown in Table 2.
  • Corrosion ⁇ basically no corrosion; Cleaning situation: ⁇ completely removed; ⁇ slightly corroded; ⁇ a small amount of residue; ⁇ medium corrosion; ⁇ more residuals; ⁇ Severe corrosion. ⁇ A large amount of residue.
  • the cleaning solution of the present invention is a metal wire containing a photoresist residue.
  • Wafers, via wafers and metal pad wafers have good cleaning results and a wide temperature range without corrosion of metallic aluminum and non-metallic silicon dioxide.
  • Comparative Example 1 and Example 5 that the use of other organic solvents commonly used in the art, such as dimethyl sulfoxide, does not completely remove the photoresist residue of the wafer, and the use of an alcohol ether as a solvent is advantageous. Removal of photoresist residue.
  • the photoresist residue of the wafer could not be completely removed without the addition of the alcoholamine.
  • Comparative Example 3 Comparative Example 4, and Example 11 and Example 12 that in the case where the other components are identical and the cleaning operation conditions are the same, if aluminum and its derivatives are not added, metal aluminum is produced. Corrosion; at the same time, it can be seen that the addition of niobium and its derivatives can completely remove the photoresist residues on the wafer.
  • the positive progress of the present invention is that the cleaning solution of the present invention is capable of removing photoresist residues on metal, via and pad wafers while substantially no substrate Attacks have good application prospects in the field of semiconductor wafer cleaning.
  • wt% of the present invention refers to the mass percentage.

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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

一种低蚀刻的去除光阻蚀刻残留物的清洗液，其含有(a)醇胺，(b)醇醚，(c)水，(d)螯合剂，(e)肼及其衍生物。

Description

一种低蚀刻的去除光阻蚀刻残留物的清洗液 技术领域
本发明公开了一种低蚀刻的去除光阻蚀刻残留物的清洗液。
技术背景
在半导体元器件制造过程中，光阻层的涂敷、曝光和成像对元器件的图案制造来说是必要的工艺步骤。在图案化的最后(即在光阻层的涂敷、成像、离子植入和蚀刻之后)进行下一工艺步骤之前，光阻层材料的残留物需彻底除去。通常，在半导体器件的制程中使用几十次光刻工艺，由于等离子蚀刻气体的离子和自由基引起与光刻胶的复杂化学反应，光刻胶迅速与无机物的交联硬化，使得光阻层变得不易溶解从而更难于除去。至今在半导体制造工业中一般使用两步法(干法灰化和湿蚀刻)除去这层光阻层膜。第一步利用干法灰化除去光阻层(PR)的大部分；第二步利用缓蚀剂组合物湿蚀刻/清洗工艺除去且清洗掉剩余的光阻层，其步骤一般为清洗液清洗/漂洗/干燥。在这个过程中只能除去残留的聚合物光阻层和无机物，而不能攻击损害金属层如铝层。
在目前的湿法清洗工艺中，用得最多的清洗液是含有羟胺类和含氟类的清洗液，羟胺类清洗液的典型专利有US6319885、US5672577、US6030932、US6825156、US5419779和US6777380B2等。经过不断改进，其溶液本身对金属铝的腐蚀速率已经大幅降低，但该类清洗液由于使用羟胺，而羟胺存在来源单一、易爆炸等问题。而现存的氟化物类清洗液虽然有了较大的改进，如US5,972,862、US 6,828,289等，但仍然存在不能很好地同时控制金属和非金属基材的腐蚀，清洗后容易造成通道特征尺寸的改变；另一方面由于一些半导体企业中湿法清洗设备是由石英制成，而含氟的清洗液对石英有腐蚀并随温度的升高而腐蚀加剧，故存在与现有石英设备不兼容的问题而影响其广泛使用。
尽管上述两类清洗液已经相对比较成功地应用于半导体工业，但是由于其各自的限制和缺点，业界还是开发出了第三类的清洗液，这类清洗液既不含有羟胺也不含有氟化物。如US598145A公开了含有有机酸和醇胺的PH在3.5-7的酸性清洗液，该清洗液很快能够去除金属层和导电介质层的光刻胶。如US6103680A公开了含有低烷基链羟基肼、水、羧酸化合物和水溶性有机溶剂的清洗液，该清洗液对金属基本无腐蚀并且能够有效的去除经过等离子体刻蚀后的残留物。这类既不含有羟胺也不含有氟化物的清洗液既解决了羟胺的来源单一和安全环保方面的问题，又解决了含氟类清洗液非金属腐蚀速率不稳定的问题。但是这类清洗液往往在使用过程中存在很大的局限性。因此尽管揭示了一些清洗液组合物，但还是需要而且近来更加需要制备适应面更广的该类清洗液。
发明概要
本发明的目的是为了提供一种能够去除晶圆上的光阻残留物的低成本半导体晶圆清洗液，其不含有羟胺和氟化物；对金属和非金属的腐蚀速率较小；并与石英设备兼容。
该新型清洗液含有：
i.醇胺，醇胺具体含量为质量百分比20-70％，优选20-60％；
ii.醇醚，醇醚具体含量为质量百分比1-50％；优选1-40％；
iii.水，水具体含量为小于质量百分比40％，优选1-35％；
iv.螯合剂，螯合剂具体含量为质量百分比0.1-10％，优选0.5-10％；
v.肼及其衍生物，肼及其衍生物具体含量为质量百分比0.1-15％，优选0.2-10％。
上述含量均为质量百分比含量，且不含有羟胺和氟化物。
本发明中，所述的醇胺较佳的为单乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、乙基二乙醇胺、N，N-二乙基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一种或多种。醇胺的加入有利于完全去除晶圆的光阻 残留物。
本发明中，所述的醇醚较佳的为二乙二醇单烷基醚和/或二丙二醇单烷基醚。其中，所述的二乙二醇单烷基醚较佳的为二乙二醇单甲醚、二乙二醇单乙醚和二乙二醇单丁醚；所述的二丙二醇单烷基醚较佳的为二丙二醇单甲醚、二丙二醇单乙醚和二丙二醇单丁醚。所述的醇醚优选二丙二醇单烷基醚，更优选二丙二醇单甲醚中的一种或多种。所述的醇醚比常用的有机溶剂如二甲基亚砜、N-甲基吡咯烷酮等具有更好的清洗效果。
本发明中，所述的螯合剂较佳的为邻苯二酚、没食子酸、对羟基苯甲酸、邻苯三酚、5-甲氧基邻苯三酚、5-叔丁基邻苯三酚、5-羟甲基邻苯三酚、乙二胺四乙酸、反-1,2-环已二胺四乙酸、乙二醇双(2-氨基乙基)四乙酸、柠檬酸、琥珀酸、乳酸、酒石酸、没食子酸甲酯、1-没食子酸甘油酯中的一种或多种。
本发明中，所述的肼及其衍生物较佳的为水合肼、苯甲酰肼、乙醇肼、碳酸肼、水杨酰肼、草酰二肼、丁二酸二酰肼、己二酸二酰肼、丙二酰肼、对肼基苯甲酸、乙酸肼中的一种或多种。肼及其衍生物的加入有利于抑制金属(例如铝)的腐蚀；肼及其衍生物的加入还能够有利于完全去除晶圆上的光阻残留物
本发明中，水优选地可为去离子水，蒸馏水，超纯水，或通过其它手段去除杂质离子的水。
本发明的清洗液，并不含氟化物和羟胺，因而相较传统的清洗液，具有使用更安全稳定，效果更温和的优点。
本发明中的清洗液，可以在50℃至80℃下清洗晶圆上的光阻残留物。具体方法如下：将含有光阻残留物的晶圆浸入本发明中的清洗液中，在50℃至80℃下浸泡合适的时间后，取出漂洗后用高纯氮气吹干。
本发明的技术效果在于：
1)本发明的清洗液通过肼及其衍生物，可在有效地去除金属线(metal)、通孔(via)和金属垫(Pad)晶圆上的光阻残留物同时，实现了对金属铝和非金 属腐蚀的抑制。
2)本发明的清洗液解决了传统羟胺类清洗液中羟胺来源单一、价格昂贵、易爆炸等问题；
3)本发明的清洗液由于其非金属腐蚀速率较低；解决了传统氟类清洗液非金属腐蚀速率不稳定的问题，并与目前半导体厂商普遍使用的石英清洗槽兼容。
发明内容
下面通过具体实施例进一步阐述本发明的优点，但本发明的保护范围不仅仅局限于下述实施例。
本发明所用试剂及原料均市售可得。本发明的清洗液由上述成分简单均匀混合即可制得。
表1 实施例及对比例清洗液的组分和含量
Figure PCTCN2015071538-appb-000001
Figure PCTCN2015071538-appb-000002
效果实施例
为了进一步考察该类清洗液的清洗情况，本发明采用了如下技术手段：即将含有光阻残留物的金属线(metal)晶圆、通孔(via)晶圆和金属垫(Pad)晶圆分别浸入清洗液中，在50℃至80℃下利用恒温振荡器以约60转/分的振动频率振荡10～30分钟，然后经漂洗涤后用高纯氮气吹干。光阻残留物的清洗效果和清洗液对晶片的腐蚀情况如表2所示。
表2 实施例及对比例清洗液的清洗效果
Figure PCTCN2015071538-appb-000003
腐蚀情况： ◎基本无腐蚀；   清洗情况： ◎完全去除；
  ○略有腐蚀；     ○少量残余；
  △中等腐蚀；     △较多残余；
  ×严重腐蚀。     ×大量残余。
从表2可以看出，本发明的清洗液对含有光阻残留物的金属线(metal) 晶圆、通孔(via)晶圆和金属垫(Pad)晶圆具有良好的清洗效果，使用温度范围广，同时没有腐蚀金属铝和非金属二氧化硅。从对比例1和实施例5可以看出，使用其它本领域常用的有机溶剂，例如二甲亚砜时，并没有能够完全去除晶圆的光阻残留物，而使用醇醚作为溶剂，有利于光阻残留物的去除。从对比例2和实施例8可以看出，不加入醇胺的情况下，并不能完全去除晶圆的光阻残留物。从对比例3、对比例4和实施例11、实施例12可以看出，在其它组分完全相同、清洗操作条件也相同的情况下，如不加入肼及其衍生物，则会产生金属铝的腐蚀；同时可以看出，肼及其衍生物的加入能够完全去除晶圆上的光阻残留物。
综上，本发明的积极进步效果在于：本发明的清洗液能够去除金属线(metal)、通孔(via)和金属垫(Pad)晶圆上的光阻残留物的同时对于基材基本没有攻击，在半导体晶片清洗等领域具有良好的应用前景。
应当理解的是，本发明所述wt％均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (11)

  1. 一种低蚀刻的去除光阻蚀刻残留物的清洗液，其特征在于，包含醇胺，醇醚，水，螯合剂以及肼及其衍生物。
  2. 如权利要求1所述的清洗液，其特征在于，其中所述的醇胺的含量为质量百分比20-70％，所述的醇醚含量为质量百分比1-50％，所述的水含量为小于质量百分比40％，所述的螯合剂含量为质量百分比0.1-10％；所述的肼及其衍生物含量为质量百分比0.1-15％。
  3. 如权利要求2所述的清洗液，其特征在于，其中所述的醇胺的含量为质量百分比20-60％，所述的醇醚含量为质量百分比1-40％，所述的水含量为小于质量百分比1-35％，所述的螯合剂含量为质量百分比0.5-10％；所述的肼及其衍生物含量为质量百分比0.2-10％。
  4. 如权利要求1所述的清洗液，其特征在于，其中所述的醇胺为单乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、乙基二乙醇胺、N，N-二乙基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一种或多种。
  5. 如权利要求1所述的清洗液，其特征在于，其中所述的醇醚为二乙二醇单烷基醚和/或二丙二醇单烷基醚。
  6. 如权利要求5所述的清洗液，其特征在于，其中所述的二乙二醇单烷基醚为二乙二醇单甲醚、二乙二醇单乙醚和二乙二醇单丁醚；所述的二丙二醇单烷基醚为二丙二醇单甲醚、二丙二醇单乙醚和二丙二醇单丁醚。
  7. 如权利要求1所述的清洗液，其特征在于，其中所述的螯合剂为邻苯二酚、没食子酸、对羟基苯甲酸、邻苯三酚、5-甲氧基邻苯三酚、5-叔丁基邻苯三酚、5-羟甲基邻苯三酚、乙二胺四乙酸、反-1,2-环已二胺四乙酸、乙二醇双(2-氨基乙基)四乙酸、柠檬酸、琥珀酸、乳酸、酒石酸、没食子酸甲酯、1-没食子酸甘油酯中的一种或多种。
  8. 如权利要求1所述的清洗液，其特征在于，其中所述的肼及其衍生物较佳的为水合肼、苯甲酰肼、乙醇肼、碳酸肼、水杨酰肼、草酰二肼、丁二酸 二酰肼、己二酸二酰肼、丙二酰肼、对肼基苯甲酸、乙酸肼中的一种或多种。
  9. 如权利要求1所述的清洗液，其特征在于，所述的水为去离子水，蒸馏水，超纯水的一种或多种。
  10. 如权利要求1所述的清洗液，其特征在于，所述的清洗液不含有羟胺和氟化物。
  11. 一种如权利要求1-10任一项所述的清洗液在去除光阻残留物的应用。
PCT/CN2015/071538 2014-03-26 2015-01-26 一种低蚀刻的去除光阻蚀刻残留物的清洗液 WO2015143942A1 (zh)

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