WO2016101333A1 - 一种光阻残留物清洗液 - Google Patents

一种光阻残留物清洗液 Download PDF

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WO2016101333A1
WO2016101333A1 PCT/CN2015/000897 CN2015000897W WO2016101333A1 WO 2016101333 A1 WO2016101333 A1 WO 2016101333A1 CN 2015000897 W CN2015000897 W CN 2015000897W WO 2016101333 A1 WO2016101333 A1 WO 2016101333A1
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cleaning solution
solution according
mass
concentration
ethoxylate
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PCT/CN2015/000897
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English (en)
French (fr)
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郑玢
刘兵
孙广胜
黄达辉
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郑玢
刘兵
孙广胜
黄达辉
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Publication of WO2016101333A1 publication Critical patent/WO2016101333A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the invention discloses a photoresist residue cleaning liquid, in particular to a cleaning liquid which does not contain hydroxylamine and fluoride.
  • the application, exposure and imaging of the photoresist layer are necessary process steps for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (ie, after coating, imaging, ion implantation, and etching of the photoresist layer).
  • dozens of photolithography processes are used in the process of a semiconductor device. Due to the complex chemical reaction with the photoresist caused by ions and radicals of the plasma etching gas, the photoresist is rapidly hardened and crosslinked with the inorganic material, so that the photoresist The layer becomes less soluble and thus more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step utilizes dry ashing to remove most of the photoresist layer (PR);
  • the second step uses the corrosion inhibitor composition wet etch/clean process to remove and clean the remaining photoresist layer, typically in the form of a cleaning solution. / rinse / dry. Only the residual polymer photoresist layer and inorganic matter can be removed in this process, and the damage to the metal layer such as the aluminum layer cannot be attacked.
  • the most used cleaning liquid is a cleaning liquid containing hydroxylamines and fluorine-containing cleaning liquids.
  • Typical patents of hydroxylamine cleaning liquids are US6319885, US5672577, US6030932, US6825156, US5419779 and US6777380B2.
  • US 6,103,680 A discloses a cleaning solution containing a low alkyl chain hydroxy hydrazine, water, a carboxylic acid compound and a water-soluble organic solvent which is substantially non-corrosive to the metal and which is effective in removing the plasma-etched residue.
  • This kind of cleaning solution containing neither hydroxylamine nor fluoride can solve the problem of single source and safety and environmental protection of hydroxylamine, and solve the problem of unstable corrosion rate of non-metal of fluorine-containing cleaning liquid.
  • cleaning fluids often have great limitations in their use.
  • some cleaning fluid compositions have been disclosed, there is a need and a greater need to prepare such a cleaning fluid that is more versatile.
  • the object of the present invention is to provide a low-cost semiconductor wafer cleaning solution capable of removing photoresist residue on a wafer, which does not contain hydroxylamine and fluoride; has a low corrosion rate to metals and nonmetals; The device is compatible.
  • An aspect of the present invention provides a photoresist residue cleaning solution containing an alcohol amine, a solvent, water, a phenol, an alkynyl ethoxylate, a polyol, a hydrazine, and a derivative thereof. That is, the photoresist residue cleaning solution includes at least the following components:
  • the aforementioned alcohol amine is preferably an aliphatic alcohol amine, more preferably monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, N,N-dimethylethanolamine One or more of N-(2-aminoethyl)ethanolamine and diglycolamine.
  • the concentration is preferably from 10% to 70%, preferably from 10% to 60%.
  • the solvent is a solvent conventional in the art, preferably one or more selected from the group consisting of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, ether and amide.
  • the sulfoxide is preferably dimethyl sulfoxide
  • the sulfone is preferably sulfolane
  • the imidazolidinone is preferably 1,3-dimethyl-2-imidazolidinone.
  • the pyrrolidone is preferably N-methylpyrrolidone; the imidazolidinone is preferably 1,3-dimethyl-2-imidazolidinone (DMI); the ether is preferably Dipropylene glycol methyl ether; the amide is preferably N,N-dimethylacetamide.
  • the concentration is preferably from 10% to 60%, preferably from 10% to 50%.
  • the phenols are preferably polyhydric phenols, more preferably catechol, hydroquinone, resorcinol, pyrogallol, 5-methoxy pyrogallol, 5- One or more of tert-butyl pyrogallol and 5-hydroxymethyl pyrogallol.
  • the concentration is preferably from 0.1 to 10%; preferably from 0.5 to 5%.
  • hydrazine and its derivatives are preferably hydrazine hydrate, benzoyl hydrazide, 2-hydroxyethyl hydrazine, carbohydrazide, salicylhydrazide, oxalyl dihydrazide, succinic acid dihydrazide, and propylene
  • concentration is preferably from 0.05 to 10%, preferably from 0.1 to 5%.
  • the above polyol is preferably an alkyl polyol, more preferably glycerol, pentaerythritol, xylitol, sorbitol, diethylene glycol, dipropylene glycol, 2-hydroxymethane- One or more of 2-methyl-1,3 propanediol.
  • the concentration is preferably from 0.05 to 10%, preferably from 0.1 to 5%.
  • alkynol ethoxylate is preferably a propynol ethoxy compound or a butyne 2
  • concentration is preferably from 0.05 to 5%, preferably from 0.1 to 3%.
  • the water concentration is preferably less than 40%, preferably 5 to 35%.
  • the water may preferably be deionized water, distilled water, ultrapure water, or water by which impurity ions are removed by means.
  • the cleaning solution for removing the photoresist residue does not contain abrasive particles, hydroxylamine, fluoride and oxidant.
  • the photoresist residue on the wafer can be cleaned at 50 ° C to 80 ° C.
  • the specific method is as follows: the wafer containing the photoresist residue is immersed in the cleaning liquid in the present invention, and immersed at 50 ° C to 80 ° C for a suitable period of time, taken out and rinsed, and then blown dry with high-purity nitrogen gas.
  • the cleaning solution of the present invention can effectively remove metal, via and metal pads by an effective combination of phenols, polyols, hydrazine and its derivatives, and acetylenic ethoxylates.
  • (Pad) Photoresist residue on the wafer simultaneously suppresses corrosion of metallic aluminum and non-metal.
  • the cleaning solution of the invention solves the problems of single source, high price and easy explosion of hydroxylamine in the traditional hydroxylamine cleaning solution;
  • the cleaning liquid of the invention has low non-metal corrosion rate; solves the problem of unstable non-metal corrosion rate of the conventional fluorine-based cleaning liquid, and is compatible with the quartz cleaning tank commonly used by semiconductor manufacturers.
  • the reagents and starting materials used in the present invention are commercially available.
  • the cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.
  • the present invention adopts the following technical means: a metal wafer, a via wafer, and a metal pad wafer containing a photoresist residue, respectively.
  • Immersion in the cleaning solution shaking at a vibration frequency of about 60 rpm for 10 to 40 minutes at 50 ° C to 80 ° C using a constant temperature oscillator, followed by washing with a rinse and then drying with high purity nitrogen gas.
  • the cleaning effect of the photoresist residue and the corrosion of the cleaning solution on the wafer are shown in Table 2.
  • Corrosion ⁇ basically no corrosion; Cleaning situation: ⁇ completely removed; ⁇ slightly corroded; ⁇ a small amount of residue; ⁇ medium corrosion; ⁇ more residuals; ⁇ Severe corrosion. ⁇ A large amount of residue.
  • the cleaning liquid of the present invention has a good cleaning effect on metal wafers, via wafers and metal pad wafers containing photoresist residues, and the use temperature.
  • Comparative Example 1 and Example 1 in the case where no alcoholamine was added, there was more residual residue on the surface of the wafer which could not be removed.
  • Comparative Example 2 and Example 2 the lack of solvent in the formulation caused the photoresist residue on the wafer to be completely removed.
  • Comparative Example 3 and Example 5 It can be seen from Comparative Example 3 and Example 5 that in the case where the remaining components and cleaning conditions are completely the same, the lack of phenols will cause severe corrosion of the metal aluminum, and the photoresist residue on the wafer cannot be completely completed. Remove it clean. It can be seen from Comparative Example 4 and Example 6 that in the case where the other components are identical and the cleaning operation conditions are the same, if aluminum and its derivatives are not added, corrosion of the metal aluminum occurs. It can be seen from Comparative Example 5 and Example 8 that the addition of the polyol contributes to the protection of the metallic aluminum and the removal of the photoresist residue.
  • the positive progress of the present invention is that the cleaning solution of the present invention is capable of removing photoresist residues on metal, via and pad wafers while substantially no substrate Attacks have good application prospects in the field of semiconductor wafer cleaning.
  • wt% of the present invention refers to the mass percentage.

Abstract

一种不含氟化物和羟胺的去除光阻蚀刻残留物的清洗液及其组成。这种不含氟化物和羟胺的低蚀刻性的去除光阻蚀刻残留物的清洗液含有(a)醇胺、(b)溶剂、(c)水、(d)酚类、(e)炔醇类乙氧基化合物、(f)肼及其衍生物、(g)多元醇。这种低蚀刻性的去除光阻蚀刻残留物的清洗液能够快速的去除经过硬烤、干法刻蚀、灰化和等离子注入引起复杂化学变化后交联硬化的光刻胶，并且在能够去除金属线、通孔和金属垫晶圆上的光阻残留物的同时对于基材基本没有攻击，如金属铝、金属铜、非金属二氧化硅等。该清洗液在半导体晶片清洗等领域具有良好的应用前景。

Description

一种光阻残留物清洗液 技术领域
本发明公开了光阻残留物清洗液，尤其涉及一种不含有羟胺和氟化物的清洗液。
背景技术
在半导体元器件制造过程中，光阻层的涂敷、曝光和成像对元器件的图案制造来说是必要的工艺步骤。在图案化的最后(即在光阻层的涂敷、成像、离子植入和蚀刻之后)进行下一工艺步骤之前，光阻层材料的残留物需彻底除去。通常，在半导体器件的制程中使用几十次光刻工艺，由于等离子蚀刻气体的离子和自由基引起与光刻胶的复杂化学反应，光刻胶迅速与无机物的交联硬化，使得光阻层变得不易溶解从而更难于除去。至今在半导体制造工业中一般使用两步法(干法灰化和湿蚀刻)除去这层光阻层膜。第一步利用干法灰化除去光阻层(PR)的大部分；第二步利用缓蚀剂组合物湿蚀刻/清洗工艺除去且清洗掉剩余的光阻层，其步骤一般为清洗液清洗/漂洗/干燥。在这个过程中只能除去残留的聚合物光阻层和无机物，而不能攻击损害金属层如铝层。
在目前的湿法清洗工艺中，用得最多的清洗液是含有羟胺类和含氟类的清洗液，羟胺类清洗液的典型专利有US6319885、US5672577、US6030932、US6825156、US5419779和US6777380B2等。经过不断改进，其溶液本身对金属铝的腐蚀速率已经大幅降低，但该类清洗液由于使用羟胺，而羟胺存 在来源单一、易爆炸等问题。而现存的氟化物类清洗液虽然有了较大的改进，如US 5,972,862、US 6,828,289等，但仍然存在不能很好地同时控制金属和非金属基材的腐蚀，清洗后容易造成通道特征尺寸的改变；另一方面由于一些半导体企业中湿法清洗设备是由石英制成，而含氟的清洗液对石英有腐蚀并随温度的升高而腐蚀加剧，故存在与现有石英设备不兼容的问题而影响其广泛使用。
尽管上述两类清洗液已经相对比较成功地应用于半导体工业，但是由于其各自的限制和缺点，业界还是开发出了第三类的清洗液，这类清洗液既不含有羟胺也不含有氟化物。如US5981454A公开了含有有机酸和醇胺的PH在3.5-7的酸性清洗液，该清洗液很高能够去除金属层和导电介质层的光刻胶。如US6103680A公开了含有低烷基链羟基肼、水、羧酸化合物和水溶性有机溶剂的清洗液，该清洗液对金属基本无腐蚀并且能够有效的去除经过等离子体刻蚀后的残留物。这类既不含有羟胺也不含有氟化物的清洗液既解决了羟胺的来源单一和安全环保方面的问题，又解决了含氟类清洗液非金属腐蚀速率不稳定的问题。但是这类清洗液往往在使用过程中存在很大的局限性。因此尽管揭示了一些清洗液组合物，但还是需要而且近来更加需要制备适应面更广的该类清洗液。
发明内容
本发明的目的是为了提供一种能够去除晶圆上的光阻残留物的低成本半导体晶圆清洗液，其不含有羟胺和氟化物；对金属和非金属的腐蚀速率较小；并与石英设备兼容。
本发明的一方面在于提供一种光阻残留物清洗液，该清洗液含有醇胺，溶剂，水，酚类，炔醇类乙氧基化合物，多元醇，肼及其衍生物。即该光阻残留物清洗液至少包括如下组分：
i.醇胺
ii.溶剂
iii.水
iv.酚类
v.炔醇类乙氧基化合物
vi.多元醇
vii.肼及其衍生物。
且，其中，前述醇胺较佳的为脂肪族的醇胺，更佳的为单乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N，N-二甲基基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一种或几种。浓度较佳的为10％-70％，优选10-60％。
且，其中，前述溶剂为本领域常规的溶剂，较佳的选自亚砜、砜、咪唑烷酮、吡咯烷酮、咪唑啉酮、醚和酰胺中的一种或多种。其中，所述的亚砜较佳的为二甲基亚砜；所述的砜较佳的为环丁砜；所述的咪唑烷酮较佳的为1，3-二甲基-2-咪唑烷酮；所述的吡咯烷酮较佳的为N-甲基吡咯烷酮；所述的咪唑啉酮较佳的为1，3-二甲基-2-咪唑啉酮(DMI)；所述的醚较佳的为二丙二醇甲醚；所述的酰胺较佳的为N，N-二甲基乙酰胺。浓度较佳的为10％-60％优选10％-50％。
且，其中，前述酚类较佳的为多元酚，更佳的为邻苯二酚、对苯二酚、间苯二酚、联苯三酚、5-甲氧基邻苯三酚、5-叔丁基邻苯三酚、5-羟甲基邻苯三酚中的一种或几种。浓度较佳的为0.1-10％；优选0.5-5％。
且，其中，前述肼及其衍生物较佳的为水合肼、苯甲酰肼、2-羟乙基肼、碳酰肼、水杨酰肼、草酰二肼、丁二酸二酰肼、丙二酰肼中的一种或几种。浓度较佳的为0.05-10％，优选0.1-5％。
且，其中，前述多元醇较佳的为烷基多元醇，更佳的为丙三醇、季戊四醇、木糖醇、山梨醇、二缩二乙二醇、一缩二丙二醇、2-羟基甲烷-2-甲基-1，3丙二醇中的一种或几种。浓度较佳的为0.05-10％，优选0.1-5％。
且，其中，前述炔醇类乙氧基化合物优选丙炔醇乙氧基化合物、丁炔二 醇乙氧基化合物、2，4，7，9-四甲基-5-癸炔-4，7-二醇乙氧基化物中的一种或几种。浓度较佳的为0.05-5％，优选0.1-3％。
且，其中，前述水浓度较佳的为小于40％，优选5-35％。水优选地可为去离子水，蒸馏水，超纯水，或通过其手段去除杂质离子的水。
上述含量均为质量百分比含量；这种去除光刻胶残留物的清洗液不含有研磨颗粒，羟胺、氟化物及氧化剂。
本发明中的清洗液，可以在50℃至80℃下清洗晶圆上的光阻残留物。具体方法如下：将含有光阻残留物的晶圆浸入本发明中的清洗液中，在50℃至80℃下浸泡合适的时间后，取出漂洗后用高纯氮气吹干。
本发明的技术效果在于：
1)本发明的清洗液通过酚类、多元醇、肼及其衍生物、炔醇类乙氧基化合物的有效组合，可在有效地去除金属线(metal)、通孔(via)和金属垫(Pad)晶圆上的光阻残留物同时，实现对金属铝和非金属腐蚀的抑制。
2)本发明的清洗液解决了传统羟胺类清洗液中羟胺来源单一、价格昂贵、易爆炸等问题；
3)本发明的清洗液由于其非金属腐蚀速率较低；解决了传统氟类清洗液非金属腐蚀速率不稳定的问题，并与目前半导体厂商普遍使用的石英清洗槽兼容。
具体实施方式
下面通过具体实施例进一步阐述本发明的优点，但本发明的保护范围不仅仅局限于下述实施例。
本发明所用试剂及原料均市售可得。本发明的清洗液由上述成分简单均匀混合即可制得。
表1 实施例及对比例清洗液的组分和含量
Figure PCTCN2015000897-appb-000001
Figure PCTCN2015000897-appb-000002
Figure PCTCN2015000897-appb-000003
效果实施例
为了进一步考察该类清洗液的清洗情况，本发明采用了如下技术手段：即将含有光阻残留物的金属线(metal)晶圆、通孔(via)晶圆和金属垫(Pad)晶圆分别浸入清洗液中，在50℃至80℃下利用恒温振荡器以约60转/分的振动频率振荡10～40分钟，然后经漂洗涤后用高纯氮气吹干。光阻残留物的清洗效果和清洗液对晶片的腐蚀情况如表2所示。
表2 部分实施例和对比例的晶圆清洗情况
Figure PCTCN2015000897-appb-000004
Figure PCTCN2015000897-appb-000005
腐蚀情况： ◎基本无腐蚀；   清洗情况： ◎完全去除；
  ○略有腐蚀；     ○少量残余；
  △中等腐蚀；     △较多残余；
  ×严重腐蚀。     ×大量残余。
从表2可以看出，本发明的清洗液对含有光阻残留物的金属线(metal)晶圆、通孔(via)晶圆和金属垫(Pad)晶圆具有良好的清洗效果，使用温度范围广，同时没有腐蚀金属铝和非金属二氧化硅。从对比例1和实施例1可以看出，不加入醇胺的情况下，晶圆表面的光阻残留物有较多的剩余无法被清除。从对比例2和实施例2可以看出，配方中缺少溶剂会导致晶圆上的光阻残留物无法被完全去除干净。从对比例3和实施例5可以看出，在其余组分及清洗条件完全一致的情况下，缺少酚类会照成对金属铝的严重腐蚀，同时无法将晶圆上的光阻残留物完全去除干净。从对比例4和实施例6可以看出，在其他组分完全相同、清洗操作条件也相同的情况下，如不加入肼及其衍生物，则会产生金属铝的腐蚀。从对比例5和实施例8可以看出，多元醇的加入对金属铝的保护及光阻残留物的去除均有帮助。从对比例6和实施例10可以看出，在其他组分完全相同、清洗条件完全一致的情况下，不加入丙炔醇乙氧基化合物会影响晶圆上光阻残留物的去除，导致部分光阻残留物无法清除。从以上这些对比例及实施例的比较结果可知，本申请清洗液中各组分互相支持，彼此协作，从而能够在去除光阻残留物的同时对于基材不造成 腐蚀。
综上，本发明的积极进步效果在于：本发明的清洗液能够去除金属线(metal)、通孔(via)和金属垫(Pad)晶圆上的光阻残留物的同时对于基材基本没有攻击，在半导体晶片清洗等领域具有良好的应用前景。
应当理解的是，本发明所述wt％均指的是质量百分含量。
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。

Claims (26)

  1. 一种光阻残留物清洗液，所述清洗液含有醇胺，溶剂，水，酚类，炔醇类乙氧基化合物，多元醇，肼及其衍生物，且所述清洗液不含有氟化物和/或羟胺。
  2. 如权利要求1所述的清洗液，其中，所述醇胺为脂肪族的醇胺。
  3. 如权利要求2所述的清洗液，其中所述醇胺选自单乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N，N-二甲基基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一种或几种。
  4. 如权利要求1所述的清洗液，其中，所述醇胺浓度为质量百分比10％-70％。
  5. 如权利要求4所述的清洗液，其中，所述醇胺浓度为质量百分比10-60％。
  6. 如权利要求1所述的清洗液，其中，所述溶剂选自亚砜、砜、咪唑烷酮、吡咯烷酮、咪唑啉酮、醚和酰胺中的一种或多种。
  7. 如权利要求6所述的清洗液，其中，所述的亚砜为二甲基亚砜；所述的砜为环丁砜；所述的咪唑烷酮为1，3-二甲基-2-咪唑烷酮；所述的吡咯烷酮为N-甲基吡咯烷酮；所述的咪唑啉酮为1，3-二甲基-2-咪唑啉酮；所述的醚为二丙二醇甲醚；所述的酰胺为N，N-二甲基乙酰胺。
  8. 如权利要求1所述的清洗液，其中，所述溶剂浓度为质量百分比10％-60％。
  9. 如权利要求8所述的清洗液，其中，所述溶剂浓度为质量百分比10％-50％。
  10. 如权利要求1所述的清洗液，其中，所述酚类为多元酚。
  11. 如权利要求10所述的清洗液，其中，所述酚类为邻苯二酚、对苯二酚、间苯二酚、联苯三酚、5-甲氧基邻苯三酚、5-叔丁基邻苯三酚、5-羟甲基邻苯三酚中的一种或几种。
  12. 如权利要求1所述的清洗液，其中，所述酚类浓度为质量百分比0.1-10％。
  13. 如权利要求12所述的清洗液，其中，所述酚类浓度为质量百分比0.5-5％。
  14. 如权利要求1所述的清洗液，其中，所述肼及其衍生物为水合肼、苯甲酰肼、2-羟乙基肼、碳酰肼、水杨酰肼、草酰二肼、丁二酸二酰肼、丙二酰肼中的一种或几种。
  15. 如权利要求1所述的清洗液，其中，所述肼及其衍生物浓度为质量百分比0.05-10％。
  16. 如权利要求15所述的清洗液，其中，所述肼及其衍生物浓度为质量百分比0.1-5％。
  17. 如权利要求1所述的清洗液，其中，所述多元醇为烷基多元醇。
  18. 如权利要求17所述的清洗液，其中，所述多元醇为丙三醇、季戊四醇、木糖醇、山梨醇、二缩二乙二醇、一缩二丙二醇、2-羟基甲烷-2-甲基-1，3丙二醇中的一种或几种。
  19. 如权利要求1所述的清洗液，其中，所述多元醇浓度为质量百分比0.05-10％。
  20. 如权利要求19所述的清洗液，其中，所述多元醇浓度为质量百分比0.1-5％。
  21. 如权利要求1所述的清洗液，其中，所述炔醇类乙氧基化合物为丙炔醇乙氧基化合物、丁炔二醇乙氧基化合物、2，4，7，9-四甲基-5-癸炔-4，7-二醇乙氧基化物中的一种或几种。
  22. 如权利要求1所述的清洗液，其中，所述炔醇类乙氧基化合物浓度为质量百分比0.05-5％。
  23. 如权利要求22所述的清洗液，其中，所述炔醇类乙氧基化合物浓度为质量百分比0.1-3％。
  24. 如权利要求1所述的清洗液，其中，所述水浓度为质量百分比小于40％。
  25. 如权利要求1所述的清洗液，其中，所述水浓度为质量百分比5-35％。
  26. 一种如权利要求1-25任一项所述的清洗液在去除光阻残留物的应用。
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CN115018068A (zh) * 2022-05-30 2022-09-06 福建天甫电子材料有限公司 用于光阻洗净液生产的自动配料系统及其配料方法

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CN112592777B (zh) * 2020-12-03 2021-09-07 湖北兴福电子材料有限公司 一种3d nand结构片干法蚀刻后的深沟槽清洗液
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