WO2018099112A1 - 一种含氟清洗液 - Google Patents

一种含氟清洗液 Download PDF

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WO2018099112A1
WO2018099112A1 PCT/CN2017/094364 CN2017094364W WO2018099112A1 WO 2018099112 A1 WO2018099112 A1 WO 2018099112A1 CN 2017094364 W CN2017094364 W CN 2017094364W WO 2018099112 A1 WO2018099112 A1 WO 2018099112A1
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fluorine
cleaning liquid
cleaning
containing cleaning
liquid according
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PCT/CN2017/094364
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English (en)
French (fr)
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何春阳
赵鹏
刘兵
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安集微电子科技（上海）股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Definitions

  • the invention relates to the field of semiconductor component cleaning liquids, in particular to a fluorine-containing cleaning liquid.
  • the application, exposure and imaging of the photoresist layer are necessary process steps for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (ie, after coating, imaging, ion implantation, and etching of the photoresist layer). Ion bombardment in the doping step hardens the photoresist polymer, thus making the photoresist layer less soluble and more difficult to remove.
  • this layer of photoresist film is typically removed using a two-step process (dry ashing and wet etching) in the semiconductor manufacturing industry.
  • the first step uses dry ashing to remove most of the photoresist layer (PR).
  • the second step utilizes a corrosion inhibitor composition wet etch/clean process to remove the remaining photoresist layer, the specific steps of which are typically rinse cleaning/rinsing/deionized water rinsing.
  • it is required to remove only the residual polymer photoresist layer and the inorganic material, and not attack the damaged metal layer.
  • Typical cleaning fluids in the prior art are as follows: amine cleaning fluids, semi-aqueous amine based (non-hydroxylamine) cleaning fluids, and fluoride cleaning fluids.
  • the first two types of cleaning fluid are mainly used in metal aluminum
  • the cleaning solution needs to be cleaned at a high temperature, generally between 60 ° C and 80 ° C, and there is a problem that the corrosion rate of the metal is large.
  • fluoride-based cleaning solutions can be cleaned at lower temperatures (room temperature to 50 ° C), there are still various disadvantages.
  • US 6,387,859 discloses a cleaning solution containing fluorine and containing hydroxylamine, using benzotriazole (BTA) as a corrosion inhibitor of copper. Although the protective effect is good, the problem of surface adsorption is still not solved, and it is not solved. The corrosion of the cleaning fluid under high-speed rotation is in control of the metal.
  • No. 5,972,862 discloses a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, since the cleaning effect is not very stable, and there are various problem. No.
  • 6,224,785 discloses a fluorine-containing cleaning composition which has extremely low corrosion to copper. Although the cleaning solution is excellent in copper protection, there is no corrosion inhibiting surface adsorption problem, but the viscosity and surface tension of the cleaning liquid are very good. Large, thus affecting the cleaning effect, there are often problems with ball defects in the industry.
  • the present invention provides a fluorine-containing cleaning liquid which does not contain hydroxylamine and an oxidizing agent, and the cleaning liquid has strong cleaning ability, and can effectively remove medium ion etching residues in a semiconductor manufacturing process, especially after ashing in a copper-matrix process. Residues and non-metals in high-speed single-chip cleaning Materials such as silicon oxynitride and low dielectric materials and metallic materials such as Cu have lower corrosion rates.
  • the present invention provides a fluorine-containing cleaning liquid characterized by containing the following components and contents:
  • e) hydrazine and its derivatives are 0.01% to 10%, preferably 0.05% to 5%.
  • the solvent comprises one or more of sulfoxide, imidazolidinone, pyrrolidone, amide and ether.
  • the sulfoxide comprises one or more of dimethyl sulfoxide, diethyl sulfoxide and methyl sulfoxide;
  • the imidazolidinone comprises 2-imidazolidinone, 1,3-dimethyl One or more of 2--2-imidazolidinone and 1,3-diethyl-2-imidazolidinone;
  • the pyrrolidone includes N-methylpyrrolidone, N-ethylpyrrolidone, N-cyclohexylpyrrolidone And one or more of N-hydroxyethylpyrrolidone;
  • the ether includes propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, and One or more of tripropylene glycol monomethyl ether.
  • the fluoride comprises hydrogen fluoride, and/or a salt of hydrogen fluoride formed with a base.
  • the base comprises aqueous ammonia, quaternary ammonium hydroxide and/or an alcohol amine.
  • the fluoride comprises hydrogen fluoride (HF), ammonium fluoride (NH 4 F), ammonium hydrogen fluoride (NH 4 HF 2 ), tetramethylammonium fluoride (N(CH 3 ) 4 F), and trishydroxyl One or more of ammonium fluoride (N(CH 2 OH) 3 HF).
  • the organic amine comprises one or more of an organic amine having a hydroxyl group, an amino group and a carboxyl group.
  • the presence of the organic amine facilitates pH stability and improves the stability and reproducibility of the cleaning process.
  • the hydroxyl group-containing organic amine is an alcohol amine; the amino group-containing organic amine is an organic polyamine; and the carboxyl group-containing organic amine is an amino group-containing organic acid.
  • the organic amine comprises ethanolamine, diethanolamine, triethanolamine, isopropanolamine, N, N-dimethylethanolamine and N-methyldiethanolamine, diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, ammonia tris One or more of acetic acid and ethylenediaminetetraacetic acid.
  • the organic amine includes one or more of pentamethyldiethylenetriamine, iminodiacetic acid, and triethanolamine.
  • the hydrazine and its derivatives include methyl carbazate, p-mercaptobenzoic acid, benzyl carbazate, ethyl carbazate, tert-butyl carbazate, cesium sulfate, acetohydrazide, formyl Bismuth, benzoyl hydrazide, oxalyl dihydrazide, dihydrazide, nicotinic acid hydrazide, dihydric acid dihydrazide, benzene sulfonyl hydrazide, 2-hydroxyethyl hydrazine, N- acetophenone, p-toluenesulfonyl hydrazide
  • phthaloyl hydrazide, maleic hydrazide, and 4-hydroxybenzohydrazide One or more of phthaloyl hydrazide, maleic hydrazide, and 4-hydroxybenzohydrazide.
  • the fluorine-containing cleaning liquid disclosed in the present invention does not contain hydroxylamine and an oxidizing agent, and can effectively remove residues of medium ion etching in a semiconductor process, especially residues after ashing in a copper-matrix process;
  • the speed of single-chip cleaning has a small corrosion rate for non-metallic materials (such as silicon oxynitride and low dielectric materials) and metal materials (such as Cu);
  • the fluorine-containing cleaning liquid disclosed in the invention is suitable for the batch immersion type and the batch rotary spray type cleaning method, and is especially suitable for the high-speed single-plate rotary type cleaning method, and the cleaning of the invention under the high-speed single-chip cleaning condition.
  • the liquid overcomes the defects of copper corrosion inhibition of the conventional cleaning liquid;
  • the fluorine-containing cleaning liquid provided by the invention can clean the plasma etching residue at 25 ° C to 55 ° C, and has a good application prospect in the field of microelectronics such as semiconductor wafer cleaning.
  • the reagents and starting materials used in the present invention are commercially available.
  • the cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.
  • the present invention adopts the following technical means: metal (Cu) blank silicon wafer and non-metal (SiON and low-k material (BD) blank silicon wafer respectively Immerse in the cleaning solution, soak at 30 ° C for 30 min at rest or at different speeds, rinse with deionized water, and dry with high purity nitrogen.
  • the metal channel wafer containing the plasma etching residue in the damascene process was placed in a high-speed rotary cleaning mode, rotated at 25 ° C to 50 ° C for 1.5 min, rinsed with deionized water, and dried with high purity nitrogen.
  • the cleaning effect of the residue and the corrosion of metals and non-metals are shown in Table 2.
  • the cleaning liquid of the present invention does not substantially erode the metals (such as Cu) and non-metals (SiON and BD) used in the manufacture of semiconductors, and the corrosion rate is in the soaking, low rotation speed ( ⁇ 60 rpmm/ Min) and high speed (>200rpm/min) are close to or less than what is required in the semiconductor industry for single-chip high-speed rotary cleaning.

Abstract

含氟清洗液含有氟化物、有机胺、有机溶剂、水和肼及其衍生物，所述含氟清洗液清洗能力强，可有效去除半导体制程过程中等离子刻蚀残留物，尤其是在铜马士革工艺中灰化后的残留物，并且在高转速单片机清洗中对非金属材料(如氮氧化硅和低介质材料)和金属材料(如Cu)等有较小的腐蚀速率，适用于批量浸泡式、批量旋转喷雾式清洗方式，尤其适用于高转速单片旋转式的清洗方式，克服了传统清洗液铜腐蚀抑制的缺陷，在半导体晶片清洗等微电子领域具有良好的应用前景。

Description

一种含氟清洗液 技术领域
本发明涉及半导体元器件清洗液领域，尤其涉及一种含氟清洗液。
背景技术
在半导体元器件制造过程中，光阻层的涂敷、曝光和成像对元器件的图案制造来说是必要的工艺步骤。在图案化的最后(即在光阻层的涂敷、成像、离子植入和蚀刻之后)进行下一工艺步骤之前，光阻层材料的残留物需彻底除去。在掺杂步骤中离子轰击会硬化光阻层聚合物，因此使得光阻层变得不易溶解从而更难于除去。
目前，在半导体制造工业中一般使用两步法(干法灰化和湿蚀刻)除去这层光阻层膜。第一步利用干法灰化除去光阻层(PR)的大部分。第二步利用缓蚀剂组合物湿蚀刻/清洗工艺除去剩余的光阻层，其具体步骤一般为清洗液清洗/漂洗/去离子水漂洗。在此过程中，要求只除去残留的聚合物光阻层和无机物，而不能攻击损害金属层。随着半导体制造技术水平的提高以及电子器件尺寸的降低，在半导体制造领域中使用金属铜、low-k介质材料越来越多。尤其是铜双大马士革工艺越来越广泛的情况下，寻找能够有效去除刻蚀残留物的同时又能保护low-k介质材料、非金属材料和金属材料的清洗液就越来越重要。同时随着半导体制程尺寸越来越小，清洗方式也越来越广泛的使用到高速旋转单片清洗，因此对金属和非金属材料的腐蚀控制也越来越严格，开发能够适用于批量浸泡式、批量旋转喷雾式清洗方式，尤其适用于高转速单片旋转式的清洗方式的清洗液是亟待解决的问题。
现有技术中典型的清洗液有以下几种：胺类清洗液，半水性胺基(非羟胺类)清洗液以及氟化物类清洗液。其中，前两类清洗液主要应用在金属铝 线的清洗工艺中，该清洗液需要在高温下清洗，一般在60℃到80℃之间，存在对金属的腐蚀速率较大的问题。而现有的氟化物类清洗液虽然能在较低的温度(室温到50℃)下进行清洗，但仍然存在着各种各样的缺点。例如，不能同时控制金属和非金属基材的腐蚀，清洗后容易造成通道特征尺寸的改变，从而改变半导体结构；采用传统苯并三氮唑作金属铜的腐蚀抑制剂，虽然金属铜的蚀刻速率较小，但是传统唑类腐蚀抑制剂(BTA)不仅难以降解对生物体系不环保，而且在清洗结束后容易吸附在铜表面，导致集成电路的污染，会引起电路内不可预见的导电故障；有些现有技术避开传统唑类使用能够控制铜腐蚀和表面吸附的抑制剂，但是存在黏度表面张力大清洗效果不理想的问题。
US6,387,859公开了含氟同时含有羟胺的清洗液，使用苯并三氮唑类(BTA)作为铜的腐蚀抑制剂，虽然保护效果较好，仍然未能解决表面吸附的问题，也没有解决在高速旋转下清洗液对金属腐蚀在控制情况。US5,972,862公开了含氟物质的清洗组合物，其包括含氟物质、无机或有机酸、季铵盐和有机极性溶剂，pH为7～11，由于其清洗效果不是很稳定，存在多样的问题。US6,224,785公开了一种对铜有极低腐蚀的含氟清洗组合物，尽管该清洗液对铜的保护非常优良，不存在腐蚀抑制表面吸附问题，但是其清洗液的粘度与表面张力都很大，从而影响清洗效果，业界使用中也常常存在球形颗粒(ball defect)的问题。
因此，为了克服现有清洗液的缺陷，适应新的清洗要求，比如保护低介电材料、环境更为友善、克服金属腐蚀抑制剂表面吸附、低缺陷水平、低刻蚀率以及适用于高转速旋转洗清方式等，亟待寻求新的清洗液。
发明内容
为解决上述问题，本发明提供一种不含有羟胺及氧化剂含氟清洗液，该清洗液清洗能力强，可有效去除半导体制程过程中等离子刻蚀残留物，尤其是在铜马士革工艺中灰化后的残留物，并且在高转速单片机清洗中对非金属 材料(如氮氧化硅和低介质材料)和金属材料(如Cu)等有较小的腐蚀速率。
具体地，本发明提供一种含氟清洗液，其特征在于，含有以下组分及含量：
a)有机溶剂     10％～75％；
b)水           20％～60％；
c)氟化物       0.01％～25％；
d)有机胺       0.5％～15％；
e)肼及其衍生物 0.01％～10％，优选为0.05-5％。
优选地，所述溶剂包括亚砜、咪唑烷酮、吡咯烷酮、酰胺和醚中的一种或多种。
优选地，所述亚砜包括二甲基亚砜、二乙基亚砜和甲乙基亚砜中的一种或多种；所述咪唑烷酮包括2-咪唑烷酮、1，3-二甲基-2-咪唑烷酮和1，3-二乙基-2-咪唑烷酮中的一种或多种；所述吡咯烷酮包括N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种；所述醚包括丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚和三丙二醇单甲醚中的一种或多种。
优选地，所述氟化物包括氟化氢、和/或氟化氢与碱形成的盐。其中，所述碱包括氨水、季胺氢氧化物和/或醇胺。
优选地，所述氟化物包括氟化氢(HF)、氟化铵(NH4F)、氟化氢铵(NH4HF2)、四甲基氟化铵(N(CH3)4F)和三羟乙基氟化铵(N(CH2OH)3HF)中的一种或多种。
优选地，所述有机胺包括含羟基、氨基和羧基的有机胺中的一种或多种。所述有机胺的存在，有利于pH值稳定，提高清洗过程的稳定性和重现性。
优选地，所述含羟基的有机胺为醇胺；所述含氨基的有机胺为有机多胺；所述含羧基的有机胺为含氨基的有机酸。
优选地，所述有机胺包括乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N， N-二甲基乙醇胺和N-甲基二乙醇胺，二乙烯三胺、五甲基二乙烯三胺和多乙烯多胺，2-氨基乙酸、2-氨基苯甲酸、亚氨基二乙酸，氨三乙酸和乙二胺四乙酸中的一种或多种。
更优选地，所述有机胺包括五甲基二乙烯三胺、亚氨基二乙酸和三乙醇胺中的一种或多种。
优选地，所述肼及其衍生物包括肼基甲酸甲酯、对肼基苯甲酸、肼基甲酸苄酯、肼基甲酸乙酯、肼基甲酸叔丁酯、硫酸肼、乙酰肼、甲酰肼、苯甲酰肼、草酰二肼、二甲酰肼、烟酸酰肼、碳酸二酰肼、苯磺酰肼、2-羟乙基肼、N-乙酰苯肼、对甲苯磺酰肼、邻苯二甲酰肼、顺丁烯二酰肼、4-羟基苯甲酰肼中的一种或多种。
有现有技术相比较，本发明的积极进步效果在于：
1)本发明所公开的含氟清洗液中不含有羟胺及氧化剂，其可有效去除半导体制程过程中等离子刻蚀的残留物，尤其是在铜马士革工艺中灰化后的残留物；并且在高转速单片机清洗中对非金属材料(如氮氧化硅和低介质材料)和金属材料(如Cu)等有较小的腐蚀速率；
2)本发明所公开的含氟清洗液适用于批量浸泡式、批量旋转喷雾式清洗方式，尤其适用于高转速单片旋转式的清洗方式，在高转速单片清洗条件下，本发明的清洗液克服了传统清洗液铜腐蚀抑制的缺陷；
3)另外，本发明提供的含氟清洗液可以在25℃至55℃下清洗等离子刻蚀残留物，在半导体晶片清洗等微电子领域具有良好的应用前景。
具体实施方式
本发明所用试剂及原料均市售可得。本发明的清洗液由上述成分简单均匀混合即可制得。
表1实施例及对比例清洗液的组分和含量
Figure PCTCN2017094364-appb-000001
Figure PCTCN2017094364-appb-000002
Figure PCTCN2017094364-appb-000003
效果实施例
为了考察该类清洗液在浸泡、低转速(＜60rpmm/min)和高转速(＞200rpm/min)下对金属和非金属材料的腐蚀情况，并进一步考察在单片高速旋转清洗方式下对含有等离子刻蚀残留物的金属孔道的清洗情况，本发明采用了如下技术手段：即将金属(Cu)空白硅片和非金属(SiON和低介质(low-k)材料(BD))空白硅片分别浸入清洗液中，在40℃下以静止或不同转速浸泡30min，经去离子水漂洗后用高纯氮气吹干。将大马士革工艺中含有等离子刻蚀残留物的金属孔道晶圆置于高速旋转清洗方式下，在25℃至50℃下旋转1.5min，经去离子水漂洗后用高纯氮气吹干。残留物的清洗效果及对金属和非金属的腐蚀情况如表2所示。
表2 部分实施例及对比例的腐蚀速率和清洗效果
Figure PCTCN2017094364-appb-000004
Figure PCTCN2017094364-appb-000005
从表2中可以看出：本发明的清洗液对半导体制成中所用的金属(如Cu)和非金属(SiON和BD)基本不会侵蚀，其腐蚀速率在浸泡、低转速(＜60rpmm/min)和高转速(＞200rpm/min)均接近或小于半导体业界通常在单片高速旋转清洗下所要求的
Figure PCTCN2017094364-appb-000006
和
Figure PCTCN2017094364-appb-000007
Figure PCTCN2017094364-appb-000008
从对比例1和对比例2与实施例5和实施例12可以看出，使用半导体业界常用金属腐蚀抑制剂BTA(苯并三唑)或者氮唑类腐蚀抑制剂，在浸泡、低转速(＜60rpmm/min)下能够抑制铜的腐蚀，但是在高转速下不能控制铜的蚀刻速率，而本发明的清洗液在浸泡、低转速(＜60rpmm/min)和高转速(＞200rpm/min)都能够控制金属和非金属的腐蚀速率，尤其是控制高速下的铜腐蚀问题。对比例3使用专利文献CN101412949中公开的含氟清洗液，同样发现，无法控制高转速下的铜腐蚀问题。
进一步考察清洗液对等离子刻蚀残留物进行清洗发现，其等离子刻蚀残留物均被去除，而且高转速下基本没有腐蚀金属和非金属，大马士革工艺下铜的金属孔道没有变宽，使用常用的BTA和氮唑类腐蚀抑制剂的清洗液均出现了通道电性能测试不合格的问题，使用未加入肼及其衍生物公开过的含氟清洗液(CN101412949)出现了通道变宽的问题，进一步验证了肼及其 衍生物的加入在保证清洗效果的同时可以有效的控制金属的腐蚀，同时在高速旋转单片机清洗下仍然可以控制金属铜的腐蚀速率。
应当理解的是，本发明中所提及的％，为质量百分比单位符号。
应当注意的是，本发明的实施例有较佳的实施性，且并非对本发明作任何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变更或修饰为等同的有效实施例，但凡未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于本发明技术方案的范围内。

Claims (12)

  1. 一种含氟清洗液，其特征在于，含有以下组分及含量：
    Figure PCTCN2017094364-appb-100001
  2. 如权利要求1所述的含氟清洗液，其特征在于，所述溶剂包括亚砜、咪唑烷酮、吡咯烷酮、酰胺和醚中的一种或多种。
  3. 如权利要求2所述的含氟清洗液，其特征在于，所述亚砜包括二甲基亚砜、二乙基亚砜和甲乙基亚砜中的一种或多种；所述咪唑烷酮包括2-咪唑烷酮、1，3-二甲基-2-咪唑烷酮和1，3-二乙基-2-咪唑烷酮中的一种或多种；所述吡咯烷酮包括N-甲基吡咯烷酮、N-乙基吡咯烷酮、N-环己基吡咯烷酮和N-羟乙基吡咯烷酮中的一种或多种；所述醚包括丙二醇单甲醚、丙二醇单乙醚、丙二醇单丁醚、二丙二醇单甲醚、二丙二醇单乙醚、二丙二醇单丁醚和三丙二醇单甲醚中的一种或多种。
  4. 如权利要求1所述的含氟清洗液，其特征在于，所述氟化物包括氟化氢、和/或氟化氢与碱形成的盐。
  5. 如权利要求4所述的含氟清洗液，其特征在于，所述碱包括氨水、季胺氢氧化物和/或醇胺。
  6. 如权利要求4所述的含氟清洗液，其特征在于，所述氟化物包括氟化氢(HF)、氟化铵(NH4F)、氟化氢铵(NH4HF2)、四甲基氟化铵(N(CH3)4F)和三羟乙基氟化铵(N(CH2OH)3HF)中的一种或多种。
  7. 如权利要求1所述的含氟清洗液，其特征在于，所述有机胺包括含羟基、氨基和羧基的有机胺中的一种或多种。
  8. 如权利要求7所述的含氟清洗液，其特征在于，所述含羟基的有机胺为醇胺；所述含氨基的有机胺为有机多胺；所述含羧基的有机胺为含氨基的 有机酸。
  9. 如权利要求1所述的含氟清洗液，其特征在于，所述有机胺包括乙醇胺、二乙醇胺、三乙醇胺、异丙醇胺、N，N-二甲基乙醇胺和N-甲基二乙醇胺，二乙烯三胺、五甲基二乙烯三胺和多乙烯多胺，2-氨基乙酸、2-氨基苯甲酸、亚氨基二乙酸，氨三乙酸和乙二胺四乙酸中的一种或多种。
  10. 如权利要求1所述的含氟清洗液，其特征在于，所述有机胺包括五甲基二乙烯三胺、亚氨基二乙酸和三乙醇胺中的一种或多种。
  11. 如权利要求1所述的含氟清洗液，其特征在于，所述肼及其衍生物包括肼基甲酸甲酯、对肼基苯甲酸、肼基甲酸苄酯、肼基甲酸乙酯、肼基甲酸叔丁酯、硫酸肼、乙酰肼、甲酰肼、苯甲酰肼、草酰二肼、二甲酰肼、烟酸酰肼、碳酸二酰肼、苯磺酰肼、2-羟乙基肼、N-乙酰苯肼、对甲苯磺酰肼、邻苯二甲酰肼、顺丁烯二酰肼、4-羟基苯甲酰肼中的一种或多种。
  12. 如权利要求1所述的含氟清洗液，其特征在于，所述肼及其衍生物的质量百分比含量为0.05-5％。
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