CN112592777B - 一种3d nand结构片干法蚀刻后的深沟槽清洗液 - Google Patents
一种3d nand结构片干法蚀刻后的深沟槽清洗液 Download PDFInfo
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Abstract
本发明公开了一种3D NAND结构片干法蚀刻后的深沟槽清洗液,该清洗液的主要成分包括占清洗液10‑40质量%硝酸、0.1‑0.5质量%氢氟酸、0.01‑0.5质量%氟硅改性仲胺类有机物,0.1‑5质量%醇胺类缓蚀剂,其余为水。该清洗液能将3D NAND结构片干法蚀刻的深沟槽深宽比80:1及以下的深沟槽侧壁聚合物残渣快速清洗干净。
Description
技术领域
本发明属于电子化学品领域,具体涉及3D NAND结构片干法蚀刻后的深沟槽清洗液
背景技术
3D NAND存储芯片相较于平面结构的NAND储存容量成倍增加,3D NAND存储芯片的堆叠层数越高,存储容量越大,进而带来更大的成本节约、能耗降低。3D NAND存储芯片也由最初的32层堆叠发展到了现在128层堆叠,并已经向着196层堆叠进发。
在3D NAND存储芯片制备工艺中,须采用干法蚀刻出深沟槽,以便后续的选择性蚀刻工艺。3D NAND存储芯片的堆叠层数越高,则干法蚀刻出深沟槽的深宽比越大,在196层堆叠的3D NAND结构片中,干法蚀刻出深沟槽的深宽比已达到50:1。在干法蚀刻后,深沟槽侧壁和底部会残留光阻与含F蚀刻气体所产生的CFχ聚合物残渣。由于其具有极低表面能,在深沟槽中较难被浸润,特别是深沟槽的深宽比很大时,难以被现有的清洗液清洗干净,对高堆叠层数3D NAND存储芯片后续工艺带来很大阻碍。
发明内容
本发明针对现有清洗液在深宽比50:1及以上的3D NAND结构片干法蚀刻后深沟槽清洗中的不足,目的在于提供一种3D NAND结构片干法蚀刻后的深沟槽清洗液。
为实现上述发明目的,本发明采用的技术方案为:
一种3D NAND结构片干法蚀刻后的深沟槽清洗液,该清洗液主要成分包含10-40质量%硝酸、0.1-0.5质量%氢氟酸、0.01-0.5质量%氟硅改性仲胺类有机物,0.1-5质量%醇胺类缓蚀剂,其余为水。
上述方案中,所述的3D NAND结构片干法蚀刻的深沟槽深宽比>50:1。
上述方案中,所述的清洗液为金属杂质(如Fe、Na、Cr、Ni、K、Ag等)含量<10ppb的电子级产品。
上述方案中,所述氟硅改性仲胺类有机物的通式如式(1)所示
其中D基团如式(2)所示:
上述方案中,所述醇胺类缓蚀剂为六甲醇基三聚氰胺、二甲氨基乙醇、二乙氨基乙醇、二乙醇胺、三乙醇胺、N-羟甲基-3,4,5,6-四氢邻苯二甲酰亚胺中的一种或几种的混合物。
上述方案中,所述的清洗液配置顺序为:先将氢氟酸、水、氟硅改性仲胺类有机物以及醇胺类缓蚀剂混合均匀后再添加硝酸混匀。
本发明的有益效果:
(1)3D NAND结构片干法蚀刻后的深沟槽侧壁为SiO2与Si3N4的层状堆叠结构,本发明的清洗液对SiO2与Si3N4层的蚀刻速率均极低(小于1A/min)且40秒内可以将侧壁聚合物残渣清洗干净,对3D NAND结构层不会造成影响。
(2)本发明的清洗液中氟硅改性仲胺类有机物极大的降低了清洗液的表面张力,清洗液对SiO2与Si3N4以及低表面能的CFχ聚合物膜均有良好的浸润性,能在短时间内将深宽比小于80:1的深沟槽清洗干净,没有聚合物残渣的残留。
(3)本发明的清洗液中醇胺,由于其烷羟基的强给电子效应,使得N原子上拥有较高的电子云密度,增加了N+的稳定性,能很好的对氢氟酸起到缓释作用。由于清洗液中醇胺的存在,使得清洗液中可以存有较多的氢氟酸而不会对SiO2与Si3N4层造成过多蚀刻,同时也能提升清洗液的使用寿命。
附图说明
图1为3D NAND干法蚀刻后高深宽比(80:1)深沟槽的SEM图。
图2为结构层上部清洗效果为A的结构片SEM图。
图3为结构层下部清洗效果为A的结构片SEM图。
图4为结构层下部清洗效果为B的结构片SEM图。
图5为结构层下部清洗效果为C的结构片SEM图。
具体实施方式
为了更好地理解本发明,下面结合实施例进一步阐明本发明的内容,但本发明的内容不仅仅局限于下面的实施例。
本文所述的氟硅改性仲胺类有机物可由下述原料A、原料B和原料C合成得到,原料A、原料B和原料C均可由市售而得,本发明仅给出一种合成方法,但本发明的氟硅改性仲胺类有机物并不仅仅局限于这一种合成方法。
原料A:全氟羧酸
原料A:全氟羧酸
原料B:烯胺
原料C:含氢硅氧烷
本文所述的氟硅改性仲胺类有机物合成路线如下述方程式所示:
上述结构式中其中n为0-12的整数,m、p为小于12的正整数。
以下述化学式(1)为例,现列举一种合成方法,步骤如下:
步骤1.以二氯甲烷为溶剂,取等摩尔比(1mol)的全氟丁酸与N'N-羰基二咪唑混合,在常温下搅拌4h得到高活性酰基咪唑中间体;
步骤2.向步骤1的混合溶液中滴加1mol的3-丁烯-1-胺,加样后常温搅拌2h,采用二氯甲烷为淋洗液、低温(10℃)常压过柱,减压旋蒸得到中间体D;
步骤3.以二甲苯为溶剂,加入1,1,3,3-四甲基二硅氧烷与步骤2得到的中间体D,摩尔比1:2,加热至50℃、搅拌2h使反应物充分溶解。加入总质量0.1%的氯铂酸催化剂的二甲苯溶液(以氯铂酸计),加热至100℃,反应5h。减压蒸馏去除溶剂和未反应原料,得到化学式(1)。化学式(2)、(3)同样按这一制备步骤得到。
本文所述的氟硅改性仲胺类有机物在一些实施例中可为化学式(1)-(3)表示,但这些仅为实例,本发明的构思并不仅限于此。
化学式(1)
原料A:全氟丁酸(CAS号:375-22-4)
原料B:3-丁烯-1-胺(CAS号:2524-49-4)
原料C:1,1,3,3-四甲基二硅氧烷(CAS号:3277-26-7)
化学式(2)
原料A:全氟丁酸(CAS号:375-22-4)
原料B:3-丁烯-1-胺(CAS号:2524-49-4)
原料C:1,1,3,3,5,5-六甲基三硅氧烷(CAS号:70900-21-9)
化学式(3)
原料A:全氟辛酸(CAS号:335-67-1)
原料B:3-丁烯-1-胺(CAS号:2524-49-4)
原料C:1,1,3,3,5,5-六甲基三硅氧烷(CAS号:70900-21-9)
实施例1-10:
符合本发明所构思实施例与对比例的各组分含量列于表1,余量为水。
表1
本发明所述的清洗液配置顺序为:先将氢氟酸、水、氟硅改性仲胺类有机物以及醇胺类缓蚀剂混合均匀后再添加硝酸混匀。
通过根据本发明所构思的实施方式以多种组合配置的清洗液进行单片清洗实验,结果列于表2。
表2
通过根据本发明所构思的实施方式以多种组合配置的清洗液进行结构片清洗实验,结果列于表3。
表3
清洗效果:A:能完全清洗干净,如图2、3。
B:基本清洗干净,如图4。
C:不能清洗干净,如图4。
对比上述实施例与对比例,数据显示,本发明的清洗液的醇胺类缓蚀剂能明显保护3D NAND的SiO2与Si3N4层状结构,对3D NAND结构层不会有明显蚀刻;本发明的清洗液能在较短的时间里将高深宽比(<80:1)的深沟槽的上部和底部侧壁聚合物残渣清洗干净。本发明的清洗液能够满足现在及未来3D NAND叠层增加的清洗要求。
显然,上述实施例仅是为清楚地说明所作的实例,而并非对实施方式的限制。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而因此所引申的显而易见的变化或变动仍处于本发明创造的保护范围之内。
Claims (3)
2.根据权利要求1所述的3D NAND结构片干法蚀刻后的深沟槽清洗液,其特征在于,所述的3D NAND结构片干法蚀刻的深沟槽深宽比>50:1。
3.根据权利要求1所述的3D NAND结构片干法蚀刻后的深沟槽清洗液,其特征在于,所述醇胺类缓蚀剂为六甲醇基三聚氰胺、二甲氨基乙醇、二乙氨基乙醇、二乙醇胺、三乙醇胺、N-羟甲基-3,4,5,6-四氢邻苯二甲酰亚胺中的一种或几种的混合物。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334312A (zh) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | 多晶硅膜表面处理溶液和采用该溶液的多晶硅膜表面处理方法 |
CN1526807A (zh) * | 2003-02-19 | 2004-09-08 | ������ѧ��ʽ���� | 洗涤液及使用其的洗涤方法 |
CN103666784A (zh) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | 硅片预清洗剂 |
CN104532270A (zh) * | 2014-11-25 | 2015-04-22 | 东方电气集团东方锅炉股份有限公司 | 一种incoloy 825镍基合金氧化物清洗剂 |
CN105527803A (zh) * | 2014-09-29 | 2016-04-27 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
CN105785725A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子(上海)有限公司 | 一种光阻残留物清洗液 |
CN108121176A (zh) * | 2016-11-29 | 2018-06-05 | 安集微电子科技(上海)股份有限公司 | 一种低刻蚀光阻残留物清洗液 |
CN111793531A (zh) * | 2019-04-03 | 2020-10-20 | 悦盟先进化学股份有限公司 | 用于去除蚀刻残余物的清洗液 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101666984B (zh) * | 2008-09-05 | 2012-08-22 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
JP6493396B2 (ja) * | 2014-05-02 | 2019-04-03 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄液及び洗浄方法 |
-
2020
- 2020-12-03 CN CN202011395597.6A patent/CN112592777B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334312A (zh) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | 多晶硅膜表面处理溶液和采用该溶液的多晶硅膜表面处理方法 |
CN1526807A (zh) * | 2003-02-19 | 2004-09-08 | ������ѧ��ʽ���� | 洗涤液及使用其的洗涤方法 |
CN103666784A (zh) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | 硅片预清洗剂 |
CN105527803A (zh) * | 2014-09-29 | 2016-04-27 | 安集微电子(上海)有限公司 | 一种光刻胶清洗液 |
CN104532270A (zh) * | 2014-11-25 | 2015-04-22 | 东方电气集团东方锅炉股份有限公司 | 一种incoloy 825镍基合金氧化物清洗剂 |
CN105785725A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子(上海)有限公司 | 一种光阻残留物清洗液 |
CN108121176A (zh) * | 2016-11-29 | 2018-06-05 | 安集微电子科技(上海)股份有限公司 | 一种低刻蚀光阻残留物清洗液 |
CN111793531A (zh) * | 2019-04-03 | 2020-10-20 | 悦盟先进化学股份有限公司 | 用于去除蚀刻残余物的清洗液 |
Non-Patent Citations (1)
Title |
---|
氟硅表面活性剂的制备及应用研究进展;张创等;《有机硅材料》;20120525;第206-211页 * |
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