TW201536912A - 低蝕刻的去除光阻蝕刻殘留物的清洗液以及低蝕刻的去除光阻蝕刻殘留物的清洗液應用 - Google Patents
低蝕刻的去除光阻蝕刻殘留物的清洗液以及低蝕刻的去除光阻蝕刻殘留物的清洗液應用 Download PDFInfo
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- TW201536912A TW201536912A TW104103998A TW104103998A TW201536912A TW 201536912 A TW201536912 A TW 201536912A TW 104103998 A TW104103998 A TW 104103998A TW 104103998 A TW104103998 A TW 104103998A TW 201536912 A TW201536912 A TW 201536912A
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- Prior art keywords
- cleaning solution
- ether
- mass
- acid
- content
- Prior art date
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- 238000004140 cleaning Methods 0.000 title claims abstract description 62
- 238000005530 etching Methods 0.000 title abstract description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 22
- -1 alcohol amine Chemical class 0.000 claims abstract description 19
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 11
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 7
- 229940079877 pyrogallol Drugs 0.000 claims description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 5
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical group OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 claims description 4
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical group COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- FCKYPQBAHLOOJQ-UWVGGRQHSA-N 2-[[(1s,2s)-2-[bis(carboxymethyl)amino]cyclohexyl]-(carboxymethyl)amino]acetic acid Chemical compound OC(=O)CN(CC(O)=O)[C@H]1CCCC[C@@H]1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UWVGGRQHSA-N 0.000 claims description 2
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 2
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- 240000006394 Sorghum bicolor Species 0.000 claims description 2
- 235000011684 Sorghum saccharatum Nutrition 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- YFHNDHXQDJQEEE-UHFFFAOYSA-N acetic acid;hydrazine Chemical compound NN.CC(O)=O YFHNDHXQDJQEEE-UHFFFAOYSA-N 0.000 claims description 2
- PXXJHWLDUBFPOL-UHFFFAOYSA-N benzamidine Chemical compound NC(=N)C1=CC=CC=C1 PXXJHWLDUBFPOL-UHFFFAOYSA-N 0.000 claims description 2
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 239000012153 distilled water Substances 0.000 claims description 2
- 229930004069 diterpene Natural products 0.000 claims description 2
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 2
- LMJXSOYPAOSIPZ-UHFFFAOYSA-N 4-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=C(S)C=C1 LMJXSOYPAOSIPZ-UHFFFAOYSA-N 0.000 claims 1
- CWIPIHOKIHBERQ-UHFFFAOYSA-N CCC.[Bi] Chemical compound CCC.[Bi] CWIPIHOKIHBERQ-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- 235000015165 citric acid Nutrition 0.000 claims 1
- SWWKWOMCSSQXRJ-UHFFFAOYSA-H dibismuth;butanedioate Chemical compound [Bi+3].[Bi+3].[O-]C(=O)CCC([O-])=O.[O-]C(=O)CCC([O-])=O.[O-]C(=O)CCC([O-])=O SWWKWOMCSSQXRJ-UHFFFAOYSA-H 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 239000002184 metal Substances 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004380 ashing Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 239000007788 liquid Substances 0.000 description 17
- 230000007797 corrosion Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052755 nonmetal Inorganic materials 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- FLRVNGMVEBEPQG-UHFFFAOYSA-N 4-nonylbenzoic acid Chemical compound CCCCCCCCCC1=CC=C(C(O)=O)C=C1 FLRVNGMVEBEPQG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000004855 amber Substances 0.000 description 1
- ZRSKSQHEOZFGLJ-UHFFFAOYSA-N ammonium adipate Chemical compound [NH4+].[NH4+].[O-]C(=O)CCCCC([O-])=O ZRSKSQHEOZFGLJ-UHFFFAOYSA-N 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- GASFVSRUEBGMDI-UHFFFAOYSA-N n-aminohydroxylamine Chemical compound NNO GASFVSRUEBGMDI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/22—Light metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
本發明公開了一種低蝕刻的去除光阻蝕刻殘留物的清洗液。這種低蝕刻性的去除光阻蝕刻殘留物的清洗液含有(a)醇胺，(b)醇醚，(c)水，(d)螯合劑，(e)肼及其衍生物。這種低蝕刻性的去除光阻蝕刻殘留物的清洗液能夠快速的去除經過硬烤、乾式刻蝕、灰化和等離子注入引起複雜化學變化後交聯硬化的光刻膠，並且在能夠去除金屬線、通孔和金屬墊晶圓上的光阻殘留物的同時對於基材基本沒有攻擊，如金屬鋁，金屬銅，非金屬二氧化矽等。本發明的清洗液在半導體晶片清洗等領域具有良好的應用前景。
Description
本發明公開了一種低蝕刻的去除光阻蝕刻殘留物的清洗液。
在半導體元器件製造過程中，光阻層的塗覆、曝光和成像對元件的圖案製造來說是必要的工藝步驟。在圖案化的最後(即在光阻層的塗覆、成像、離子植入和蝕刻之後)進行下一工藝步驟之前，光阻層材料的殘留物需徹底除去。通常，在半導體器件的制程中使用幾十次光刻工藝，由於等離子蝕刻氣體的離子和自由基引起與光刻膠的複雜化學反應，光刻膠迅速與無機物的交聯硬化，使得光阻層變得不易溶解從而更難於除去。至今在半導體製造工業中一般使用兩步法(乾法灰化和濕蝕刻)除去這層光阻層膜。第一步利用乾法灰化除去光阻層(PR)的大部分；第二步利用緩蝕劑組合物濕蝕刻/清洗工藝除去且清洗掉剩餘的光阻層，其步驟一般為清洗液清洗/漂洗/乾燥。在這個過程中只能除去殘留的聚合物光阻層和無機物，而不能攻擊損害金屬層如鋁層。
在目前的濕法清洗工藝中，用得最多的清洗液是含有羥胺類和含氟類的清洗液，羥胺類清洗液的典型專利有US6319885、US5672577、US6030932、US6825156、US5419779和US6777380B2等。經過不斷改進，其溶液本身對金屬鋁的腐蝕速率已經大幅降低，但該類清洗液由於使用羥胺，而羥胺存在來源單一、易爆炸等問題。而現存的氟化物類清洗液雖然有了較大的改進，如US5,972,862、US6,828,289等，但仍然存在不能很好地同時控制金屬和非金屬基材的腐蝕，清洗後容易造成通道特徵尺寸的改變；另一方面由於一些半導體企業中濕法清洗設備是由石英製成，而含氟的清洗液對石英有腐蝕並隨溫度的升高而腐蝕加劇，故存在與現有石英設備不相容的問題而影響其廣泛使用。
儘管上述兩類清洗液已經相對比較成功地應用於半導體工業，但是由於其各自的限制和缺點，業界還是開發出了第三類的清洗液，這類清洗液既不含有羥胺也不含有氟化物。如US598145A公開了含有有機酸和醇胺的PH在3.5-7的酸性清洗液，該清洗液很快能夠去除金屬層和導電介質層的光刻膠。如US6103680A公開了含有低烷基鏈羥基肼、水、羧酸化合物和水溶性有機溶劑的清洗液，該清洗液對金屬基本無腐蝕並且能夠有效的去除經過等離子體刻蝕後的殘留物。這類既不含有羥胺也不含有氟化物的清洗液既解決了羥胺的來源單一和安全環保方面的問題，又解決了含氟類清洗液非金屬腐蝕速率不穩定的問題。但是這類清洗液往往在使用過程中存在很大的侷限性。因此儘管揭示了一些清洗液組合物，但還是需要而且近來更加需要製備適應面更廣的該類清洗液。
本發明的目的是為了提供一種能夠去除晶圓上的光阻殘留物的低成本半導體晶圓清洗液，其不含有羥胺和氟化物；對金屬和非金屬的
腐蝕速率較小；並與石英設備相容。
該新型清洗液含有：i.醇胺，醇胺具體含量為品質百分比20-70%，優選20-60%；ii.醇醚，醇醚具體含量為品質百分比1-50%；優選1-40%；iii.水，水具體含量為小於品質百分比40%，優選1-35%；iv.螯合劑，螯合劑具體含量為品質百分比0.1-10%，優選0.5-10%；v.肼及其衍生物，肼及其衍生物具體含量為品質百分比0.1-15%，優選0.2-10%。
上述含量均為品質百分比含量，且不含有羥胺和氟化物。
本發明中，所述的醇胺較佳的為單乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、異丙醇胺、乙基二乙醇胺、N，N-二乙基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一種或多種。醇胺的加入有利於完全去除晶圓的光阻殘留物。
本發明中，所述的醇醚較佳的為二乙二醇單烷基醚和/或二丙二醇單烷基醚。其中，所述的二乙二醇單烷基醚較佳的為二乙二醇單甲醚、二乙二醇單乙醚和二乙二醇單丁醚；所述的二丙二醇單烷基醚較佳的為二丙二醇單甲醚、二丙二醇單乙醚和二丙二醇單丁醚。所述的醇醚優選二丙二醇單烷基醚，更優選二丙二醇單甲醚中的一種或多種。所述的醇醚比常用的有機溶劑如二甲基亞碸、N-甲基吡咯烷酮等具有更好的清洗效果。
本發明中，所述的螯合劑較佳的為鄰苯二酚、沒食子酸、對羥基苯甲酸、鄰苯三酚、5-甲氧基鄰苯三酚、5-叔丁基鄰苯三酚、5-羥甲基鄰苯三酚、乙二胺四乙酸、反-1,2-環已二胺四乙酸、乙二醇雙(2-氨基乙基)四乙酸、檸檬酸、琥珀酸、乳酸、酒石酸、沒食子酸甲酯、1-沒食子酸甘油酯中的一種或多種。
本發明中，所述的肼及其衍生物較佳的為水合肼、苯甲醯肼、乙醇肼、碳酸肼、水楊醯肼、草醯二肼、丁二酸二醯肼、己二酸二醯肼、丙二醯肼、對肼基苯甲酸、乙酸肼中的一種或多種。肼及其衍生物的加入有利於抑制金屬(例如鋁)的腐蝕；肼及其衍生物的加入還能夠有利於完全去除晶圓上的光阻殘留物
本發明中，水優選地可為去離子水，蒸餾水，超純水，或通過其它手段去除雜質離子的水。
本發明的清洗液，並不含氟化物和羥胺，因而相較傳統的清洗液，具有使用更安全穩定，效果更溫和的優點。
本發明中的清洗液，可以在50℃至80℃下清洗晶圓上的光阻殘留物。具體方法如下：將含有光阻殘留物的晶圓浸入本發明中的清洗液中，在50℃至80℃下浸泡合適的時間後，取出漂洗後用高純氮氣吹乾。
本發明的技術效果在於：
1)本發明的清洗液通過肼及其衍生物，可在有效地去除金屬線(metal)、通孔(via)和金屬墊(Pad)晶圓上的光阻殘留物同時，實現了對金屬鋁和非金屬腐蝕的抑制。
2)本發明的清洗液解決了傳統羥胺類清洗液中羥胺來源單一、價格昂貴、易爆炸等問題；
3)本發明的清洗液由於其非金屬腐蝕速率較低；解決了傳統氟類清洗液非金屬腐蝕速率不穩定的問題，並與目前半導體廠商普遍使用的石英清洗槽相容。
下面通過具體實施例進一步闡述本發明的優點，但本發明的保護
範圍不僅僅局限於下述實施例。
本發明所用試劑及原料均市售可得。本發明的清洗液由上述成分簡單均勻混合即可制得。
為了進一步考察該類清洗液的清洗情況，本發明採用了如下技術手段：即將含有光阻殘留物的金屬線(metal)晶圓、通孔(via)晶圓和金屬墊(Pad)晶圓分別浸入清洗液中，在50℃至80℃下利用恆溫振盪器以約60轉/分的振動頻率振盪10~30分鐘，然後經漂洗滌後用高純氮氣吹乾。光阻殘留物的清洗效果和清洗液對晶片的腐蝕情況如表2所示。
從表2可以看出，本發明的清洗液對含有光阻殘留物的金屬線晶圓、通孔晶圓和金屬墊晶圓具有良好的清洗效果，使用溫度範圍廣，同時沒有腐蝕金屬鋁和非金屬二氧化矽。從對比例1和實施例5可以看出，使用其它本領域常用的有機溶劑，例如二甲亞碸時，並沒有能夠完全去除晶圓的光阻殘留物，而使用醇醚作為溶劑，有利於光阻殘留物的去除。從對比例2和實施例8可以看出，不加入醇胺的情況下，並不能完全去除晶圓的光阻殘留物。從對比例3、對比例4和實施例11、實施例12可以看出，在其它組分完全相同、清洗操作條件也相同的情況下，如不加入肼及其衍生物，則會產生金屬鋁的腐蝕；同時可以看出，肼及其衍生物的加入能夠完全去除晶圓上的光阻殘留物。
綜上，本發明的積極進步效果在於：本發明的清洗液能夠去除金屬線、通孔和金屬墊晶圓上的光阻殘留物的同時對於基材基本沒有攻擊，在半導體晶片清洗等領域具有良好的應用前景。
應當理解的是，本發明所述wt%均指的是品質百分含量。
以上對本發明的具體實施例進行了詳細描述，但其只是作為範例，本發明並不限制於以上描述的具體實施例。對於本領域技術人員
而言，任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此，在不脫離本發明的精神和範圍下所作的均等變換和修改，都應涵蓋在本發明的範圍內。
Claims (11)
- 一種低蝕刻的去除光阻蝕刻殘留物的清洗液，包含醇胺，醇醚，水，螯合劑以及肼及其衍生物。
- 如請求項1所述的清洗液，其中所述的醇胺的含量為品質百分比20-70%，所述的醇醚含量為品質百分比1-50%，所述的水含量為小於品質百分比40%，所述的螯合劑含量為品質百分比0.1-10%；所述的肼及其衍生物含量為品質百分比0.1-15%。
- 如請求項2所述的清洗液，其中所述的醇胺的含量為品質百分比20-60%，所述的醇醚含量為品質百分比1-40%，所述的水含量為小於品質百分比1-35%，所述的螯合劑含量為品質百分比0.5-10%；所述的肼及其衍生物含量為品質百分比0.2-10%。
- 如請求項1所述的清洗液，其中所述的醇胺為單乙醇胺、N-甲基乙醇胺、二乙醇胺、三乙醇胺、異丙醇胺、乙基二乙醇胺、N，N-二乙基乙醇胺、N-(2-氨基乙基)乙醇胺和二甘醇胺中的一種或多種。
- 如請求項1所述的清洗液，其中所述的醇醚為二乙二醇單烷基醚和/或二丙二醇單烷基醚。
- 如請求項5所述的清洗液，其中所述的二乙二醇單烷基醚為二乙二醇單甲醚、二乙二醇單乙醚和二乙二醇單丁醚；所述的二丙二醇單烷基醚為二丙二醇單甲醚、二丙二醇單乙醚和二丙二醇單丁 醚。
- 如請求項1所述的清洗液，其中所述的螯合劑為鄰苯二酚、沒食子酸、對羥基苯甲酸、鄰苯三酚、5-甲氧基鄰苯三酚、5-叔丁基鄰苯三酚、5-羥甲基鄰苯三酚、乙二胺四乙酸、反-1,2-環已二胺四乙酸、乙二醇雙(2-氨基乙基)四乙酸、檸檬酸、琥珀酸、乳酸、酒石酸、沒食子酸甲酯、1-沒食子酸甘油酯中的一種或多種。
- 如請求項1所述的清洗液，其中所述的肼及其衍生物較佳的為水合肼、苯甲醯肼、乙醇肼、碳酸肼、水楊醯肼、草醯二肼、丁二酸二醯肼、己二酸二醯肼、丙二醯肼、對肼基苯甲酸、乙酸肼中的一種或多種。
- 如請求項1所述的清洗液，其中所述的水為去離子水，蒸餾水，超純水的一種或多種。
- 如請求項1所述的清洗液，其中所述的清洗液不含有羥胺和氟化物。
- 一種如請求項1-10任一項所述的清洗液在去除光阻殘留物的應用。
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| JP6176584B1 (ja) * | 2016-09-30 | 2017-08-09 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| CN108121176A (zh) * | 2016-11-29 | 2018-06-05 | 安集微电子科技（上海）股份有限公司 | 一种低刻蚀光阻残留物清洗液 |
| WO2018100595A1 (ja) * | 2016-11-29 | 2018-06-07 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| CN108121175B (zh) * | 2016-11-29 | 2021-02-02 | 安集微电子科技（上海）股份有限公司 | 一种含氟清洗液 |
| JP6213803B1 (ja) * | 2016-12-28 | 2017-10-18 | パナソニックＩｐマネジメント株式会社 | レジスト剥離液 |
| CN107942625B (zh) * | 2017-11-24 | 2019-12-10 | 江苏中德电子材料科技有限公司 | 一种面板行业铜制程用新型剥离液 |
| KR20210093496A (ko) * | 2020-01-20 | 2021-07-28 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
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| JP2008297507A (ja) * | 2007-06-04 | 2008-12-11 | Espo Chemical Corp | 清浄化剤 |
| CN101597548A (zh) * | 2008-06-06 | 2009-12-09 | 安集微电子科技(上海)有限公司 | 一种等离子刻蚀残留物清洗液 |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| CN102968001A (zh) * | 2011-09-02 | 2013-03-13 | 安集微电子（上海）有限公司 | 一种碱性的清洗液 |
| CN103789780B (zh) * | 2014-02-26 | 2016-06-08 | 苏州禾川化学技术服务有限公司 | 一种ic元件用碱性通用型去毛刺液 |
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