WO2015109647A1 - 一种两性分子改性的钙钛矿光电功能材料及其应用 - Google Patents
一种两性分子改性的钙钛矿光电功能材料及其应用 Download PDFInfo
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- WO2015109647A1 WO2015109647A1 PCT/CN2014/073653 CN2014073653W WO2015109647A1 WO 2015109647 A1 WO2015109647 A1 WO 2015109647A1 CN 2014073653 W CN2014073653 W CN 2014073653W WO 2015109647 A1 WO2015109647 A1 WO 2015109647A1
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- functional material
- perovskite
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- 239000000463 material Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000002243 precursor Substances 0.000 claims description 11
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 6
- 125000000962 organic group Chemical group 0.000 claims description 6
- 125000000623 heterocyclic group Chemical group 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- -1 halide ion Chemical group 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 125000005213 alkyl heteroaryl group Chemical group 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910001413 alkali metal ion Inorganic materials 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 125000001072 heteroaryl group Chemical group 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000002425 crystallisation Methods 0.000 abstract description 4
- 230000008025 crystallization Effects 0.000 abstract description 4
- 230000004048 modification Effects 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 15
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 10
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000005457 ice water Substances 0.000 description 3
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 description 3
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- GZUXJHMPEANEGY-UHFFFAOYSA-N bromomethane Chemical compound BrC GZUXJHMPEANEGY-UHFFFAOYSA-N 0.000 description 2
- 125000000457 gamma-lactone group Chemical group 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002390 rotary evaporation Methods 0.000 description 2
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229960002684 aminocaproic acid Drugs 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229940102396 methyl bromide Drugs 0.000 description 1
- NQMRYBIKMRVZLB-UHFFFAOYSA-N methylamine hydrochloride Chemical compound [Cl-].[NH3+]C NQMRYBIKMRVZLB-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
- C09K9/02—Organic tenebrescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/006—Compounds containing, besides germanium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
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- C—CHEMISTRY; METALLURGY
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
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- C01G3/00—Compounds of copper
- C01G3/006—Compounds containing, besides copper, two or more other elements, with the exception of oxygen or hydrogen
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- Y02E10/549—Organic PV cells
Definitions
- the invention relates to a M z A y BX z+y+2 perovskite-based photoelectric functional material and a preparation method thereof, and belongs to the technical field of electronic devices.
- a perovskite material having an eight-eighth structure has its characteristic crystal structure and also exhibits excellent properties. These materials have high carrier mobility, high porosity, and a wide spectral response range, with strong absorption in the range of 300 nm to 800 nm. In addition, electrons and holes have a longer lifetime in the ABX 3 perovskite material, and the carrier diffusion length reaches 100 nm, making charge separation easier.
- the preparation method has the advantages of simple preparation method, wide source of materials and low cost, and the obtained photoelectric functional material has excellent photoelectric performance and good stability, and the efficiency and stability of the battery are obviously improved in the field of solar cells based on perovskite materials. The advantages have great industrial application prospects.
- an organic amphiphile-modified M z A y BX z+y+2 perovskite-based photoelectric functional material is provided, which is based on an ABX3 perovskite material, organic
- the amphiphilic molecule M is a modified component, and its chemical formula can be expressed as M x A y BX x+y+2 .
- R2 in the amphiphilic group R1-R-R2 is at least one of -COOH, -OSiOH, -0 3 P0H , -0 2 S0H and the like.
- R in the amphiphile R1-R-R2 is a type of organic group, and may be, for example, a linear or branched or halogenated alkyl group in C1-C30; C3-C12 Cycloalkyl; heterocyclic ring in C1-C12; alkenyl group in C2-C8; alkynyl group in C2-C8; aryl group in C6-C12; aralkyl group in C8-C30; C6-C30 An alkylaryl group; an isoaryl group in C1-C12; an alkyl heteroaryl group in C6-C30; an alkyl heterocycle in C6-C30, and the like.
- a in the M x A y BX x+y+2 photoelectric functional material is at least one of methylamine, formazan, hydrazine and the like.
- B in the M x A y BX x+y+2 photoelectric functional material is at least one of lead, tin, copper, bismuth and the like.
- X in the M x A y BX x+y+2 photoelectric functional material is at least one of chlorine, bromine, iodine and the like.
- M x A y BX x+y+2 photoelectric functional material in a solar cell, wherein M x A y BX x+y+2 is used as light in a solar cell Absorbent layer, n-type or p-type material.
- an application of an M x A y BX x+y+2 optoelectronic functional material in other fields such as LEDs, electronic components, and the like is provided.
- a method of preparing the above-described electrically functional material is provided, and specifically includes:
- amphiphilic molecule M with hydriodic acid in a mixed bath in ice water, spin-dry, and wash the precipitate with diethyl ether to obtain an iodate.
- the iodate, the methylamine iodide MAI and the Pbl2 are weighed stoichiometrically, and an appropriate amount of gamma-martactone is added thereto, and stirred to sufficiently react to obtain a precursor solution.
- the invention has the significant advantages of: improving the crystal form of the ABX3 perovskite material by using a low-cost, wide-ranging organic amphiphilic molecule, thereby greatly improving the crystallization property, thereby significantly improving the photoelectricity of the solar cell based on the perovskite material. Conversion efficiency and stability.
- the material preparation method of the invention is simple, the equipment used is simple, the materials used are widely sourced, the cost is low, and the obtained material has excellent photoelectric performance and stability.
- M in M x A y BX x+y+2 is 4-aminobutyric acid
- A is methylamine
- B is lead
- X is chlorine
- x is 0.1
- y 0.95
- the photoelectric conversion efficiency of 11% is obtained, which is much higher than that of the same battery, and exhibits good stability.
- the M x A y BX x+y+2 photoelectric functional material of the present invention has a good industrial application prospect.
- the ABX 3 perovskite-based photoelectric functional material modified by the organic amphiphile disclosed by the invention is prepared by using the whole solution method and used in the solar cell, and the crystallization property thereof is greatly improved compared with the unmodified material, and the photoelectricity is improved. Conversion efficiency and stability show significant advantages. Under the same conditions, when the M x A y BX x+ y 2 photoelectric functional material of the present invention is applied to a mesoscopic solar cell based on a carbon counter electrode, the photoelectric conversion efficiency and stability obtained are significantly higher than that. The efficiency of applying unmodified material ABX3 to such batteries has previously been reported.
- an organic amphiphilic modified ABX3 perovskite-based photoelectric functional material is based on an ABX3 perovskite material, and the organic amphiphilic molecule M is a modified component, and the chemical formula can be expressed as M z A y BX z+y+2 .
- R2 in the amphiphile R1-R-R2 may be at least one of -COOH, -OSiOH, -0 3 P0H , -0 2 S0H and the like.
- R in the amphoteric molecule R1-R-R2 is an organic group, and may be various organic groups, such as linear, or branched, or substituted alkyl groups in C1-C30; a cycloalkyl group in C12; a heterocyclic ring in C1-C12; an alkenyl group in C2-C8; an alkynyl group in C2-C8; an aryl group in C6-C12; an aralkyl group in C8-C30; C6 - an alkylaryl group in C30; an isoaryl group in C1-C12; an alkylisoaryl group in C6-C30; an alkyl heterocyclic ring in C6-C30, etc., or other organic group.
- organic groups such as linear, or branched, or substituted alkyl groups in C1-C30; a cycloalkyl group in C12; a heterocyclic ring in C1-C12; an alkeny
- a in the M z A y BX z+y+2 photoelectric functional material is preferably one of methylamine, formazan, hydrazine, and the like.
- B in the M z A y BX z+y+2 photoelectric functional material is preferably one of lead, tin, copper, bismuth or the like.
- X in the M z A y BX z+y+2 photoelectric functional material is preferably at least one of chlorine, bromine, iodine and the like.
- the content z of M in the photoelectric functional material of M z A y BX z+y+2 is in the range of 0 ⁇ z ⁇ 0.5, and the content y of A is 0 ⁇ y ⁇ l, and y + z ⁇ l .
- short-chain ammonium cations such as methylamine, formazan, hydrazine and the like are filled into the voids of the metal halide BX2 octahedron to form a three-dimensional perovskite material;
- a short-chain ammonium cation or a monovalent ion such as ruthenium ion is filled into the void of the apex of the metal octahedron to form a three-dimensional perovskite layer (the thickness of which is determined by the stoichiometry of the amphiphilic M and the monovalent ion)
- the ratio is determined, and the amphiphilic M forms an organic layer between the three-dimensional perovskite layer and the layer, and finally forms a modified perovskite material in which a plurality of layers of perovskite sheets and amphiphilic molecules are alternately stacked.
- the method for preparing an organic amphiphilic modified ABX3 perovskite-based photoelectric functional material comprises the following steps:
- the amphoteric molecule M and the hydroiodic acid may be sufficiently reacted in a mixed bath of ice water, and the mixture is subjected to rotary evaporation, and the precipitate is washed with diethyl ether to obtain iodic acid. salt; (2) taking an appropriate amount of the halide and the methyl iodide to react with 131 2 to obtain a perovskite precursor solution. Specifically, it is preferred to weigh the iodate, the methyl iodide MAI and the Pbl2, respectively, in a stoichiometric ratio. Adding an appropriate amount of gamma lactone to the mixture and stirring it to fully react to obtain a precursor solution;
- the perovskite material can be obtained by drying the precursor solvent.
- the amphiphilic 4-aminobutyric acid GABA and hydriodic acid were sufficiently reacted in a mixing bath of ice-water at a stoichiometric ratio of 1:1, and the precipitate was rotary-screwed, and the precipitate was washed with diethyl ether to obtain (GABA)I.
- GABA 4-aminobutyric acid
- hydriodic acid was sufficiently reacted in a mixing bath of ice-water at a stoichiometric ratio of 1:1, and the precipitate was rotary-screwed, and the precipitate was washed with diethyl ether to obtain (GABA)I.
- weigh (GABA)I, iodide methylamine MAI, Pbl2 according to stoichiometric ratio add appropriate amount of gamma lactone to it, stir and fully react to obtain (GABA)o .iMAo.95Pbl3.05 precursor
- the amphiphilic 4-aminobutyric acid GABA and hydrochloric acid were sufficiently reacted in a water-mixing bath at a stoichiometric ratio of 1:1, and the precipitate was rotary-screwed, and the precipitate was washed with diethyl ether to obtain (GABA)CI.
- GABA 4-aminobutyric acid
- hydrochloric acid was sufficiently reacted in a water-mixing bath at a stoichiometric ratio of 1:1, and the precipitate was rotary-screwed, and the precipitate was washed with diethyl ether to obtain (GABA)CI.
- GABA iodide methylamine MAI, Pbl2
- add appropriate amount of DMF to it, and stir it to fully react to obtain (GABA)o.06MAo.97Pbl2.
- the 97Clo.06 precursor solution was filled in a mesoscopic solar cell based on a carbon counter electrode and dried at 70 °
- the iBra.95 precursor solution was filled in a mesoscopic solar cell based on a carbon counter electrode and dried at 60 ° C. The efficiency of the tested battery was 9.8%.
- methyl iodide may be replaced by methylamine chloride, methyl bromide, etc.
- lead iodide may be replaced by lead bromide, lead chloride, cesium iodide, tin iodide, and the like.
- the stoichiometric ratio is not limited to the above range, and only needs to satisfy 0 ⁇ z ⁇ 0.5, 0 ⁇ y ⁇ l, y+z ⁇ l.
- the perovskite-based photoelectric functional material of the present invention can be used in a solar cell, and as a light absorbing layer in a solar cell, an n-type or p-type material can also be used for an LED or an electronic component as a semiconductor material.
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