JP2016531414A - 両親媒性分子で修飾したペロブスカイト電材料及びその応用 - Google Patents
両親媒性分子で修飾したペロブスカイト電材料及びその応用 Download PDFInfo
- Publication number
- JP2016531414A JP2016531414A JP2016520247A JP2016520247A JP2016531414A JP 2016531414 A JP2016531414 A JP 2016531414A JP 2016520247 A JP2016520247 A JP 2016520247A JP 2016520247 A JP2016520247 A JP 2016520247A JP 2016531414 A JP2016531414 A JP 2016531414A
- Authority
- JP
- Japan
- Prior art keywords
- perovskite
- modified
- functional material
- amphiphilic molecule
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000011159 matrix material Substances 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000002243 precursor Substances 0.000 claims description 11
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 10
- -1 halogen ion Chemical group 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 7
- 125000000962 organic group Chemical group 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 claims description 4
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 150000001350 alkyl halides Chemical class 0.000 claims description 3
- 125000005213 alkyl heteroaryl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 125000001072 heteroaryl group Chemical group 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 claims 1
- OGQYPPBGSLZBEG-UHFFFAOYSA-N dimethyl(dioctadecyl)azanium Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CCCCCCCCCCCCCCCCCC OGQYPPBGSLZBEG-UHFFFAOYSA-N 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract 1
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical group NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 22
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 17
- 239000000243 solution Substances 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000012267 brine Substances 0.000 description 3
- 229940071870 hydroiodic acid Drugs 0.000 description 3
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 3
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- JAHFQMBRFYOPNR-UHFFFAOYSA-N iodomethanamine Chemical compound NCI JAHFQMBRFYOPNR-UHFFFAOYSA-N 0.000 description 2
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- XFDUHJPVQKIXHO-UHFFFAOYSA-N 3-aminobenzoic acid Chemical compound NC1=CC=CC(C(O)=O)=C1 XFDUHJPVQKIXHO-UHFFFAOYSA-N 0.000 description 1
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- 241000989747 Maba Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical group Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- TUHVEAJXIMEOSA-UHFFFAOYSA-N gamma-guanidinobutyric acid Natural products NC(=[NH2+])NCCCC([O-])=O TUHVEAJXIMEOSA-UHFFFAOYSA-N 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- APIBROGXENTUGB-ZUQRMPMESA-M triphenyl-[(e)-3-phenylprop-2-enyl]phosphanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C\C=C\C1=CC=CC=C1 APIBROGXENTUGB-ZUQRMPMESA-M 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
- C09K9/02—Organic tenebrescent materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
- C01G17/006—Compounds containing, besides germanium, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/006—Compounds containing, besides lead, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/006—Compounds containing, besides copper, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
Description
Claims (10)
- ABX3ペロブスカイト材料をマトリックス、有機両親媒性分子Mを修飾成分にし、化学式がMzAyBXz+y+2であることを特徴とする有機両親媒性分子で修飾したMzAyBXz+y+2ペロブスカイト系光電機能材料。
- Aが一価イオン、Bが二価金属イオン、Xがハロゲンイオンであることを特徴とする請求項1に記載の有機両親媒性分子で修飾したMzAyBXz+y+2ペロブスカイト系光電機能材料。
- Aが有機アンモニアカチオンまたはアルカリ金属イオン、好ましくはメチルアミン、ホルムアミジンまたはセシウムの少なくとも1種であることを特徴とする請求項1または2に記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- Bが鉛、錫、銅及びゲルマニウムの少なくとも1種であることを特徴とする請求項1〜3のいずれかに記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- 前記の両親媒性分子MがR1-R-R2で表される。その中、R1が-NH2、-NH-C(NH2)=NHまたは-N=CH-NH2の少なくとも1種、R2が-COOH、-OSiOH、-O3POHまたは-O2SOHの少なくとも1種、Rが有機基であることを特徴とする請求項1〜4のいずれかに記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- 前記のRがC1〜C30におけるリニア、または分枝状、またはハロゲン化アルキルであり、C3〜C12におけるシクロアルキル、またはC1〜C12におけるヘテロ環、またはC2〜C8におけるアルケニル、またはC2〜C8におけるアルキニル、またはC6〜C12におけるアリール、またはC6〜C30におけるアラルキル、またはC6〜C30におけるアルキル芳香族基、C1〜C12におけるヘテロアリール、C6〜C30におけるアルキルヘテロアリール、C6〜C30におけるアルキル複素環の少なくとも1種であるであることを特徴とする請求項5に記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- Xが塩素、臭素、ヨウ素の少なくとも1種であることを特徴とする請求項1〜6のいずれかに記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- Mの含有量zが0<z≦0.5、Aの含有量yが0<y≦1、y+z≧1であることを特徴とする請求項1〜7のいずれかに記載の有機両親媒性分子で修飾したABX3ペロブスカイト系光電機能材料。
- 下記のステップを含むことを特徴とする有機両親媒性分子で修飾したMzAyBXz+y+2ペロブスカイト系光電機能材料の製造方法。
(1)両親媒性分子とハロゲン酸を反応させてハロゲン酸塩を取得する。
(2)ハロゲン酸塩の適量及びヨウ化メチルアミンをPbI2と反応させて前駆体溶液を取得する。
(3)前駆体溶剤を乾燥させてペロブスカイト材料を取得する。 - 太陽電池における請求項1〜8のいずれかに記載の有機両親媒性分子で修飾したMzAyBXz+y+2ペロブスカイト系光電機能材料の応用。その中、太陽電池における光吸収層、n型またはp型材料、または半導体材料としてLEDまたは電子部品における当該電気的機能材料の応用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410027583.7A CN103762344B (zh) | 2014-01-21 | 2014-01-21 | 一种两性分子改性的钙钛矿光电功能材料及其应用 |
CN201410027583.7 | 2014-01-21 | ||
PCT/CN2014/073653 WO2015109647A1 (zh) | 2014-01-21 | 2014-03-19 | 一种两性分子改性的钙钛矿光电功能材料及其应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016531414A true JP2016531414A (ja) | 2016-10-06 |
JP6151447B2 JP6151447B2 (ja) | 2017-06-21 |
Family
ID=50529545
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016520247A Active JP6151447B2 (ja) | 2014-01-21 | 2014-03-19 | 両親媒性分子で修飾したペロブスカイト電材料及びその応用 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10059875B2 (ja) |
EP (1) | EP3098871B1 (ja) |
JP (1) | JP6151447B2 (ja) |
CN (1) | CN103762344B (ja) |
WO (1) | WO2015109647A1 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106233484B (zh) * | 2014-04-18 | 2018-09-07 | 富士胶片株式会社 | 光电转换元件、使用该光电转换元件的太阳能电池以及光电转换元件的制造方法 |
CN103956394B (zh) * | 2014-05-13 | 2016-08-24 | 国家纳米科学中心 | 一种改善钙钛矿太阳电池吸光层性能的方法 |
CN105218594B (zh) * | 2014-06-06 | 2018-08-03 | 清华大学 | 钙钛矿材料及太阳电池 |
CN104134720A (zh) * | 2014-07-10 | 2014-11-05 | 上海大学 | 单源闪蒸法生长有机无机杂化钙钛矿材料及其平面型太阳能电池的制备方法 |
EP2966703A1 (en) * | 2014-07-11 | 2016-01-13 | Ecole Polytechnique Fédérale de Lausanne (EPFL) | Template enhanced organic inorganic perovskite heterojunction photovoltaic device |
CN104327827B (zh) * | 2014-11-03 | 2016-08-17 | 南昌航空大学 | 钙钛矿量子点纳米晶的制备及其在量子点太阳电池中的应用 |
DE102014225541A1 (de) * | 2014-12-11 | 2016-06-16 | Siemens Healthcare Gmbh | Detektionsschicht umfassend Perowskitkristalle |
JP6563212B2 (ja) * | 2015-02-23 | 2019-08-21 | 大阪瓦斯株式会社 | ペロブスカイト系材料及びそれを用いた光電変換装置 |
CN104851987B (zh) * | 2015-04-09 | 2017-05-24 | 中国科学院广州能源研究所 | 一种吸收光谱可调钙钛矿结构有机‑无机三元合金杂合物薄膜光阳极及其制备方法 |
JP6925283B2 (ja) | 2015-06-12 | 2021-08-25 | オックスフォード フォトボルテイクス リミテッド | 光起電力デバイス |
CN105390614B (zh) * | 2015-11-05 | 2018-03-30 | 吉林大学 | 一种钙钛矿太阳电池及其制备方法 |
CN105244444B (zh) * | 2015-11-06 | 2018-03-23 | 石家庄铁道大学 | 一种钙钛矿太阳能电池光电转换层的制备方法 |
CN105405974A (zh) * | 2015-11-17 | 2016-03-16 | 华中科技大学 | 一种p型掺杂的钙钛矿光电功能材料及其应用 |
CN105505375B (zh) * | 2015-11-26 | 2017-08-01 | 上海交通大学 | 一种高荧光效率有机无机杂化钙钛矿材料及制备方法 |
GB201520972D0 (en) | 2015-11-27 | 2016-01-13 | Isis Innovation | Mixed cation perovskite |
CN105514284B (zh) * | 2015-12-21 | 2017-11-10 | 曹胜伟 | 一种改性的钙钛矿结构的光电转化材料及其制备方法 |
CN105977389A (zh) * | 2016-06-07 | 2016-09-28 | 昆明理工大学 | 一种钙钛矿光吸收材料及其制备方法 |
CN106588956B (zh) * | 2016-11-21 | 2018-06-12 | 湘潭大学 | 一种光电功能材料及其应用 |
CN106642757A (zh) * | 2016-11-25 | 2017-05-10 | 清华大学 | 光热转换器件 |
CN106589438B (zh) * | 2016-11-25 | 2020-01-24 | 清华大学 | 光响应形状记忆复合材料及其制备方法以及形状记忆材料的应用方法 |
CN108511633A (zh) * | 2017-02-28 | 2018-09-07 | 中国科学院半导体研究所 | 一种无机钙钛矿发光二极管及其制备方法 |
CN108630831B (zh) * | 2017-03-23 | 2019-12-06 | 南京工业大学 | 一种提高钙钛矿发光器件寿命的方法及钙钛矿发光器件 |
CN108183170B (zh) * | 2018-01-03 | 2022-08-16 | 苏州大学 | 一种钙钛矿材料及其在太阳能电池应用和太阳能电池的制备方法 |
CN109411607B (zh) * | 2018-09-27 | 2021-01-19 | 西安交通大学 | 太阳能电池及其制备方法和改善钙钛矿层传输特性的方法 |
CN109390473A (zh) * | 2018-10-17 | 2019-02-26 | 华中科技大学 | 基于双官能团单分子修饰层的钙钛矿电池及其制备方法 |
CN111223989B (zh) * | 2018-11-23 | 2023-04-18 | 国家纳米科学中心 | 一种两性分子修饰的钙钛矿光伏器件及其制备方法和用途 |
CN111584723B (zh) * | 2020-05-11 | 2022-08-05 | 深圳市华星光电半导体显示技术有限公司 | 发光器件及其制作方法 |
CN112051249B (zh) * | 2020-09-07 | 2021-06-22 | 福州大学 | 一种对氨基苯磺酸修饰的钙钛矿复合材料及其在检测亚硝酸盐中的应用 |
CN112442356B (zh) * | 2020-12-03 | 2022-10-14 | 南京邮电大学 | 一种abx3型稳定钙钛矿量子点的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001323387A (ja) * | 2000-05-15 | 2001-11-22 | Japan Science & Technology Corp | 有機アンモニウム・無機層状ペロブスカイト化合物薄膜の作製方法 |
CN103346018A (zh) * | 2013-06-26 | 2013-10-09 | 中国科学院青岛生物能源与过程研究所 | 通过固液反应制备具有钙钛矿结构的碘化物太阳能电池 |
WO2013171517A1 (en) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Optoelectronic devices with organometal perovskites with mixed anions |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5871579A (en) * | 1997-09-25 | 1999-02-16 | International Business Machines Corporation | Two-step dipping technique for the preparation of organic-inorganic perovskite thin films |
US6429318B1 (en) * | 2000-02-07 | 2002-08-06 | International Business Machines Corporaiton | Layered organic-inorganic perovskites having metal-deficient inorganic frameworks |
WO2010008040A1 (ja) * | 2008-07-18 | 2010-01-21 | 日本化学工業株式会社 | 改質ペロブスカイト型複合酸化物、その製造方法及び複合誘電体材料 |
CN103400697B (zh) * | 2013-08-15 | 2016-01-20 | 厦门大学 | 一种全固态柔性敏化太阳能电池及其制备方法 |
CN103474574A (zh) * | 2013-09-26 | 2013-12-25 | 天津理工大学 | 一种铝掺杂氧化锌纳米棒为电子传输层的杂化太阳能电池 |
-
2014
- 2014-01-21 CN CN201410027583.7A patent/CN103762344B/zh active Active
- 2014-03-19 WO PCT/CN2014/073653 patent/WO2015109647A1/zh active Application Filing
- 2014-03-19 EP EP14880101.2A patent/EP3098871B1/en active Active
- 2014-03-19 JP JP2016520247A patent/JP6151447B2/ja active Active
-
2015
- 2015-12-27 US US14/979,477 patent/US10059875B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001323387A (ja) * | 2000-05-15 | 2001-11-22 | Japan Science & Technology Corp | 有機アンモニウム・無機層状ペロブスカイト化合物薄膜の作製方法 |
WO2013171517A1 (en) * | 2012-05-18 | 2013-11-21 | Isis Innovation Limited | Optoelectronic devices with organometal perovskites with mixed anions |
CN103346018A (zh) * | 2013-06-26 | 2013-10-09 | 中国科学院青岛生物能源与过程研究所 | 通过固液反应制备具有钙钛矿结构的碘化物太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
EP3098871B1 (en) | 2019-01-02 |
EP3098871A1 (en) | 2016-11-30 |
US20160137915A1 (en) | 2016-05-19 |
EP3098871A4 (en) | 2017-01-25 |
JP6151447B2 (ja) | 2017-06-21 |
WO2015109647A1 (zh) | 2015-07-30 |
CN103762344A (zh) | 2014-04-30 |
CN103762344B (zh) | 2016-08-17 |
US10059875B2 (en) | 2018-08-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6151447B2 (ja) | 両親媒性分子で修飾したペロブスカイト電材料及びその応用 | |
Li et al. | Dual-band luminescent lead-free antimony chloride halides with near-unity photoluminescence quantum efficiency | |
CN110590816B (zh) | 一种一维铜碘基杂化半导体材料及其光电应用 | |
Yue et al. | Organic cation directed hybrid lead halides of zero-dimensional to two-dimensional structures with tunable photoluminescence properties | |
CN105218594B (zh) | 钙钛矿材料及太阳电池 | |
CN109369725A (zh) | 一种无铅杂化二维双钙钛矿材料及制备方法 | |
Yue et al. | Organic cation directed one-dimensional cuprous halide compounds: syntheses, crystal structures and photoluminescence properties | |
CN112520781A (zh) | 一种铜掺杂三元金属卤化物及制备方法 | |
Cohen et al. | Hydroxyl functional groups in two-dimensional Dion–Jacobson perovskite solar cells | |
CN103943368A (zh) | 一种新型含锗钙钛矿材料及其太阳能电池 | |
Peng et al. | [PPh3H] 2 [SbCl5]: a zero-dimensional hybrid metal halide with a supramolecular framework and stable dual-band emission | |
CN111153896B (zh) | 一种噻吩-咔唑核四臂空穴传输材料及其制备方法和应用 | |
CN105837834A (zh) | 一种银碘阴离子高聚螺旋链基有机无机杂化半导体材料 | |
CN105481010B (zh) | 一种高产率四元硫属化合物半导体材料及其制备方法和用途 | |
CN107275489A (zh) | 高光电转化效率高热稳定性钙钛矿材料及制备方法 | |
Xie et al. | Low-Dimensional Hybrid Lead Iodide Perovskites Single Crystals via Bifunctional Amino Acid Cross-Linkage: Structural Diversity and Properties Controllability | |
TW202311228A (zh) | 電洞輸送材料、合成電洞輸送材料用的前驅體及電洞輸送材料的製造方法 | |
CN105609662B (zh) | 一种钙钛矿光伏材料专用的空穴传输材料的制备方法 | |
CN113999121A (zh) | 窄带隙、无铅、稳定和光电性能优异的dj二维双钙钛矿 | |
CN113501780B (zh) | 一种基于丁基吡啶鎓阳离子的铋碘杂化半导体类钙钛矿材料 | |
CN114369058B (zh) | 一种基于1-丁基-4甲基吡啶鎓阳离子的铋碘簇杂化半导体类钙钛矿材料 | |
JP2019014699A (ja) | 化合物 | |
CN111171036B (zh) | 一种吲哚[3,2-b]咔唑为核的空穴传输材料及其制备方法和应用 | |
CN111303186B (zh) | 一种芳基修饰咔唑为电子给体的空穴传输材料及其制备方法 | |
CN111153913B (zh) | 一种并二咔唑为电子给体的空穴传输材料及其制备方法和应用 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170426 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170524 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6151447 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |