WO2015089878A1 - 显示装置及其测试线路修复方法 - Google Patents

显示装置及其测试线路修复方法 Download PDF

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Publication number
WO2015089878A1
WO2015089878A1 PCT/CN2013/090821 CN2013090821W WO2015089878A1 WO 2015089878 A1 WO2015089878 A1 WO 2015089878A1 CN 2013090821 W CN2013090821 W CN 2013090821W WO 2015089878 A1 WO2015089878 A1 WO 2015089878A1
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WIPO (PCT)
Prior art keywords
segment
line
thin film
film transistor
display device
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PCT/CN2013/090821
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English (en)
French (fr)
Chinese (zh)
Inventor
杜鹏
施明宏
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深圳市华星光电技术有限公司
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Priority to EA201690996A priority Critical patent/EA031911B1/ru
Priority to GB1604875.3A priority patent/GB2534317B/en
Priority to KR1020167010222A priority patent/KR101894523B1/ko
Priority to US14/234,419 priority patent/US9000435B1/en
Priority to JP2016526832A priority patent/JP2016538590A/ja
Publication of WO2015089878A1 publication Critical patent/WO2015089878A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/10—Dealing with defective pixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Definitions

  • the present invention relates to the field of flat panel display technologies, and in particular, to a display device and a test line repair method thereof.
  • Transistor 100 comes as a switch.
  • the drain 102 of the thin film transistor 100 is connected to a detection signal source, and the source 103 of the thin film transistor 100 and the gate line in the display panel (Gate)
  • a line/data line is connected, and a gate 101 of the thin film transistor 100 is connected to a control signal source.
  • the control signal source outputs a high level signal (high potential signal) to the gate 101, thereby turning on the switch 100, that is, causing the source 103 and the drain 102 to be turned on.
  • the control signal source outputs a low level signal (low potential signal) to the gate 101, thereby turning off the switch 100, that is, cutting off between the test signal source and the gate line/data line. Connection.
  • a short circuit may occur between the source 103 and the drain 102 of the thin film transistor 100 due to the presence of particles.
  • a short circuit occurs at the region 104.
  • the conventional repair solution is:
  • the laser beam is cut at the cutting portion 105.
  • the width-to-length ratio (W/L, Width/Length) of the thin film transistor 100 is made. A change occurs.
  • the screen When the display panel is turned on, the screen may be abnormal due to the difference in line impedance, or the line may be defective. Defect), which leads to misjudgment and unnecessary waste loss.
  • PSVA Polymer Stabilized Vertical
  • the above short circuit occurs between the source 103 and the drain 102 of the thin film transistor 100, the above conventionality is not repaired or used.
  • the repair is done in a way, it may cause a permanent line defect in the display panel.
  • a display device includes: a display panel; wherein the display panel includes: a first thin film transistor array, the first thin film transistor array includes at least one first thin film transistor; and a second thin film transistor array, The second thin film transistor array includes at least one second thin film transistor; and at least one first backup line; wherein the first thin film transistor is adjacent to the second thin film transistor, the second thin film transistor and the test signal input line Connected to the first backup line; in a case where the first thin film transistor is short-circuited, the first input end of the first thin film transistor is used to be disconnected from the test signal input line by laser cutting a first connection, the first output end of the first thin film transistor is configured to be disconnected from the test signal output line by the laser cutting mode, the first backup line being used for laser welding Connected to the test signal output line; the display panel further includes: a control signal line array, the control signal line array including at least a control signal line; a first control end of the first thin film transistor and a second control end of the second thin film transistor are both connected to
  • the second control terminal is configured to turn on or off a switch corresponding to the second thin film transistor according to the control signal.
  • the second input terminal of the second thin film transistor is connected to the test signal input line, and the second output terminal of the second thin film transistor is connected to the first standby line.
  • the first spare line includes a first segment, a second segment, and a third segment; the second segment is located between the first segment and the third segment The second segment is connected to the second output end; in a case where the first thin film transistor is short-circuited, the second segment is used to pass the laser welding method and the test signal output line Connected, the first segment is for disconnecting a third connection with the second segment by the laser cutting mode, and the third segment is used for disconnecting and stopping by the laser cutting mode A fourth connection between the second segments.
  • the first backup line includes a first end and a second end, the first end is connected to the second output end, and the second end is disposed on the test signal output line opposite to The other side of the first end; in the case where the first thin film transistor is short-circuited, the first standby line is connected to the test signal output line by the laser welding.
  • the display panel further includes: at least one second spare line, the second backup line includes a fourth segment, a fifth segment, and a sixth segment; the fifth segment is located at the Between the fourth segment and the sixth segment, the fifth segment is connected to the second input; in the case where the first thin film transistor is short-circuited, the fifth segment is used Connected to the test signal input line by the laser welding method, the fourth segment is used to disconnect a fifth connection with the fifth segment by the laser cutting mode, the sixth The segment is used to break the sixth connection with the fifth segment by the laser cutting mode.
  • a display device includes: a display panel; the display panel includes: a first thin film transistor array, the first thin film transistor array includes at least one first thin film transistor; a second thin film transistor array, the second The thin film transistor array includes at least one second thin film transistor; and at least one first backup line; wherein the first thin film transistor is adjacent to the second thin film transistor, the second thin film transistor is connected to a test signal input line
  • the first standby line is connected; in a case where the first thin film transistor is short-circuited, the first input end of the first thin film transistor is used to disconnect between the test signal input line by laser cutting a first output end of the first thin film transistor for disconnecting a second connection with the test signal output line by the laser cutting mode, the first spare line being used for laser welding
  • the test signal output lines are connected.
  • the display panel further includes: a control signal line array, the control signal line array includes at least one control signal line; a first control end of the first thin film transistor and the second thin film transistor The second control end is connected to the control signal line, and in the case that the first thin film transistor is short-circuited, the second control end is configured to receive a control signal through the control signal line.
  • the second control terminal is configured to turn on or off a switch corresponding to the second thin film transistor according to the control signal.
  • the second input terminal of the second thin film transistor is connected to the test signal input line, and the second output terminal of the second thin film transistor is connected to the first standby line.
  • the first spare line includes a first segment, a second segment, and a third segment; the second segment is located between the first segment and the third segment The second segment is connected to the second output end; in a case where the first thin film transistor is short-circuited, the second segment is used to pass the laser welding method and the test signal output line Connected, the first segment is for disconnecting a third connection with the second segment by the laser cutting mode, and the third segment is used for disconnecting and stopping by the laser cutting mode A fourth connection between the second segments.
  • the first backup line includes a first end and a second end, the first end is connected to the second output end, and the second end is disposed on the test signal output line opposite to The other side of the first end; in the case where the first thin film transistor is short-circuited, the first standby line is connected to the test signal output line by the laser welding.
  • the display panel further includes: at least one second spare line, the second backup line includes a fourth segment, a fifth segment, and a sixth segment; the fifth segment is located at the Between the fourth segment and the sixth segment, the fifth segment is connected to the second input; in the case where the first thin film transistor is short-circuited, the fifth segment is used Connected to the test signal input line by the laser welding method, the fourth segment is used to disconnect a fifth connection with the fifth segment by the laser cutting mode, the sixth The segment is used to break the sixth connection with the fifth segment by the laser cutting mode.
  • the first input terminal is a source/drain of the first thin film transistor
  • the first output terminal is a drain/source of the first thin film transistor
  • a test circuit repairing method for a display device comprising: A, disconnecting a first connection and a second connection by a laser cutting method, wherein the first connection is a first input end of a first thin film transistor of the display device a connection between the first output end of the first thin film transistor and the test signal output line; B, the first of the display devices by laser welding An alternate line is connected to the test signal output line, wherein a second input end of the second thin film transistor in the display device is connected to the test signal input line, and a second output end of the second thin film transistor is The first spare line is connected.
  • the step B includes: B1, connecting the second segment of the first spare line to the test signal output line by the laser welding method;
  • the method includes: C. disconnecting the third connection and the fourth connection by the laser cutting mode, wherein the third connection is a connection between the first segment and the second segment of the first backup line
  • the fourth connection is a connection between the third segment of the first backup line and the second segment; wherein the second output is connected to the second segment, the Two segments are located between the first segment and the third segment.
  • the method further includes: D, connecting the first standby line to the test signal output line by the laser welding method; wherein the first backup line includes a first end and a second end, the first end being connected to the second output, the second end being disposed on the other side of the test signal output line opposite the first end.
  • the method further includes: E, disconnecting the fifth connection and the sixth connection by the laser cutting mode, wherein the fifth connection is the second of the display device a connection between a fourth segment of the spare line and a fifth segment, the sixth connection being a connection between a sixth segment of the second spare line of the display device and the fifth segment; And connecting, by the laser welding method, the fifth segment to the test signal input line; wherein the fifth segment is located between the fourth segment and the sixth segment, A fifth segment is coupled to the second input.
  • the first input terminal is a source/drain of the first thin film transistor
  • the first output terminal is a drain/source of the first thin film transistor
  • the method further includes: G, the second control terminal of the second thin film transistor receives a control signal through a control signal line in the display device, according to the The control signal turns on or off the switch corresponding to the second thin film transistor.
  • the embodiment of the present invention can make the aspect ratio of the display device not change, so that the display abnormality does not occur during the lighting detection, the misjudgment does not occur, and the display panel can be reduced during the curing process.
  • the phenomenon of poor line that is, is beneficial to improve the yield of the display panel.
  • FIG. 1 is a schematic diagram of a technical solution for detecting a display panel in the prior art
  • FIG. 2 is a schematic diagram of a repairing scheme of the thin film transistor of FIG. 1 in the event of a short circuit
  • 3A is a schematic view of a first embodiment of a display device of the present invention.
  • FIG. 3B is a schematic view of the repairing manner in FIG. 3A;
  • FIG. 4A is a schematic view showing a second embodiment of the display device of the present invention.
  • FIG. 4B is a schematic view of the repairing manner in FIG. 4A;
  • 5A is a schematic view showing a third embodiment of the display device of the present invention.
  • FIG. 5B is a schematic diagram of the repairing manner in FIG. 5A.
  • FIG. 3A is a schematic view of a first embodiment of the display device of the present invention
  • FIG. 3B is a schematic view of the repairing manner of FIG. 3A. Dot in Figure 3B Corresponding to the position of the laser welding, and the intersection Corresponding to the position of the laser cut.
  • the display device of this embodiment includes a display panel 300, wherein the display panel 300 includes a first thin film transistor array, a second thin film transistor array, and at least one first spare line (Dummy Line) 306.
  • the first thin film transistor array includes at least one first thin film transistor 303
  • the second thin film transistor array includes at least one second thin film transistor 304.
  • the second thin film transistor 304 is a backup thin film transistor of the first thin film transistor 303 (Dummy Thin Film Transistor) is used to repair the display device/display panel 300 in the event that a short circuit occurs in the first thin film transistor 303.
  • the first thin film transistor 303 is adjacent to the second thin film transistor 304, and the second thin film transistor 304 is connected to the test signal input line 301 and the first backup line 306.
  • the first input end of the first thin film transistor 303 is used to disconnect the first connection with the test signal input line 301 by laser cutting.
  • the test signal output line 307 is connected.
  • the first input end is a source/drain of the first thin film transistor 303.
  • the first output end is a drain/source of the first thin film transistor 303.
  • the display panel 300 further includes a control signal line array, and the control signal line array includes at least one control signal line 302.
  • the first control terminal of the first thin film transistor 303 and the second control terminal of the second thin film transistor 304 are both connected to the control signal line 302.
  • the second control terminal is configured to receive a control signal through the control signal line 302 to turn on or off a switch corresponding to the second thin film transistor 304 according to the control signal.
  • the second input end of the second thin film transistor 304 is connected to the test signal input line 301, and the second output end of the second thin film transistor 304 is connected to the first backup line 306.
  • the first spare line 306 includes a first segment 3061, a second segment 3062, and a third segment 3063.
  • the second segment 3062 is located between the first segment 3061 and the third segment 3063, and the second segment 3062 is connected to the second output terminal.
  • the second segment 3062 is used to connect to the test signal output line 307 by the laser welding method, and the first segment 3061 is used to pass the The laser cutting mode disconnects a third connection with the second segment 3062, and the third segment 3063 is configured to be disconnected from the second segment 3062 by the laser cutting mode.
  • the display device is repaired by cutting off the problematic thin film transistor (for example, the first thin film transistor 303 where the short circuit occurs) and the test signal line 301 and the data line/gate line (corresponding to the test signal output).
  • the connection of the line 307) causes the test signal in the test signal line 301 to pass through the standby thin film transistor (the second thin film transistor 304) into the display area inside the display panel 300, and finally the first standby Line 306 is severed.
  • the path of the test signal conduction is as shown by the arrow in Figure 3B.
  • the manner in which the display device is repaired in this embodiment requires a total of four laser cuts and one laser weld.
  • FIG. 4A is a schematic view of a second embodiment of the display device of the present invention
  • FIG. 4B is a schematic view of the repairing manner of FIG. 4A.
  • This embodiment is similar to the first embodiment described above, except that:
  • the first backup line 306 includes a first end and a second end, the first end is connected to the second output end, and the second end is disposed on the test signal output line 307. Opposite the other side of the first end.
  • the first backup line 306 is connected to the test signal output line 307 by the laser welding method.
  • the manner in which the display device is repaired in this embodiment requires a total of two laser cuts and one laser weld.
  • FIG. 5A is a schematic view of a third embodiment of the display device of the present invention
  • FIG. 5B is a schematic view of the repairing manner of FIG. 5A.
  • This embodiment is similar to the first or second embodiment described above, except that:
  • the display panel 300 further includes at least one second backup line 305, and the second backup line 305 includes a fourth segment 3051, a fifth segment 3052, and a sixth segment 3053.
  • the fifth segment 3052 is located between the fourth segment 3051 and the sixth segment 3053, and the fifth segment 3052 is connected to the second input end.
  • the fifth segment 3052 is used to connect to the test signal input line 301 by the laser welding method, and the fourth segment 3051 is used to pass the The laser cutting mode disconnects a fifth connection with the fifth segment 3052, and the sixth segment 3053 is configured to be disconnected from the fifth segment 3052 by the laser cutting mode.
  • the manner in which the display device is repaired in this embodiment requires a total of six laser cuts and two laser welds.
  • the second thin film transistor 304 is identical to the first thin film transistor 303, that is, the second thin film transistor 304 and the first A thin film transistor 303 is identical or substantially similar in size, properties, and the like. Therefore, after the display device is repaired using the above technical solution, the impedance of the entire line of the display device does not change.
  • the aspect ratio of the display device can be prevented from being changed, so that the lighting detection is not performed.
  • the display abnormality occurs, the erroneous determination does not occur, and the occurrence of line defects during the curing of the display panel 300 is reduced, that is, the yield of the display panel 300 is improved.
  • FIGS. 3A and 3B are schematic views of a first embodiment of a repair method of a display device of the present invention. Dot in Figure 3B Corresponding to the position of the laser welding, and the intersection Corresponding to the position of the laser cut.
  • the test line repairing method of the display device of this embodiment includes:
  • the first backup line 306 in the display device is connected to the test signal output line 307 by laser welding, wherein the second input end of the second thin film transistor 304 in the display device and the test Signal input lines 301 are connected, and a second output terminal of the second thin film transistor 304 is connected to the first backup line 306.
  • the step B includes:
  • the second segment 3062 of the first backup line 306 is connected to the test signal output line 307 by the laser welding method.
  • the method further includes:
  • the fourth connection is a connection between the third segment 3063 of the first spare line 306 and the second segment 3062.
  • the second output is connected to the second segment 3062, and the second segment 3062 is located between the first segment 3061 and the third segment 3063.
  • the second input end of the second thin film transistor 304 is connected to the test signal input line 301, and the second output end of the second thin film transistor 304 passes through the second segment 3062 and the first spare line 306. Connected.
  • the first input end is a source/drain of the first thin film transistor 303.
  • the first output end is a drain/source of the first thin film transistor 303.
  • the second control end of the second thin film transistor 304 receives a control signal through the control signal line 302 in the display device, according to the The control signal turns on or off the switch corresponding to the second thin film transistor 304.
  • the second thin film transistor 304 is a standby thin film transistor as the first thin film transistor 303, and the second thin film transistor 304 is used in the case where the first thin film transistor 303 is short-circuited.
  • the display device/display panel 300 performs repair.
  • the display device is repaired by cutting off the problematic thin film transistor (for example, the first thin film transistor 303 where the short circuit occurs) and the test signal line 301 and the data line/gate line (corresponding to the test signal output).
  • the connection of the line 307) causes the test signal in the test signal line 301 to pass through the standby thin film transistor (the second thin film transistor 304) into the display area inside the display panel 300, and finally the first standby Line 306 is severed.
  • the path of the test signal conduction is as shown by the arrow in Figure 3B.
  • the manner in which the display device is repaired in this embodiment requires a total of four laser cuts and one laser weld.
  • the execution of the steps is not prioritized, that is, the steps may be performed in any order.
  • FIG. 4A and 4B are schematic diagrams showing a second embodiment of a repair method of a display device of the present invention. This embodiment is similar to the first embodiment described above, except that:
  • the method further includes:
  • the first backup line 306 is connected to the test signal output line 307 by the laser welding method.
  • the first backup line 306 includes a first end and a second end, the first end is connected to the second output end, and the second end is disposed on the test signal output line 307 opposite to the first The other side of one end.
  • the manner in which the display device is repaired in this embodiment requires a total of two laser cuts and one laser weld.
  • the execution of the steps is not prioritized, that is, the steps may be performed in any order.
  • FIG. 5A and 5B are schematic views of a third embodiment of a repair method of a display device of the present invention. This embodiment is similar to the first or second embodiment described above, except that:
  • the method further includes:
  • the sixth connection is a connection between the sixth segment 3053 of the second spare line 305 of the display device and the fifth segment 3052.
  • the fifth segment 3052 is connected to the test signal input line 301 by the laser welding method.
  • the fifth segment 3052 is located between the fourth segment 3051 and the sixth segment 3053, and the fifth segment 3052 is connected to the second input end.
  • the manner in which the display device is repaired in this embodiment requires a total of six laser cuts and two laser welds.
  • the execution of the steps is not prioritized, that is, the steps may be performed in any order.
  • the second thin film transistor 304 is identical to the first thin film transistor 303, that is, the second thin film transistor 304 and the first A thin film transistor 303 is identical or substantially similar in size, properties, and the like. Therefore, after the display device is repaired using the above technical solution, the impedance of the entire line of the display device does not change.
  • the aspect ratio of the display device can be prevented from being changed, so that the lighting detection is not performed.
  • the display abnormality occurs, the erroneous determination does not occur, and the occurrence of line defects during the curing of the display panel 300 is reduced, that is, the yield of the display panel 300 is improved.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
PCT/CN2013/090821 2013-12-17 2013-12-30 显示装置及其测试线路修复方法 WO2015089878A1 (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EA201690996A EA031911B1 (ru) 2013-12-17 2013-12-30 Дисплейное устройство и способ восстановления его испытательной линии
GB1604875.3A GB2534317B (en) 2013-12-17 2013-12-30 Display device and testing line repairing method thereof
KR1020167010222A KR101894523B1 (ko) 2013-12-17 2013-12-30 디스플레이장치 및 그 테스트 라인의 수리 방법
US14/234,419 US9000435B1 (en) 2013-12-30 2013-12-30 Display device and testing line repairing method thereof
JP2016526832A JP2016538590A (ja) 2013-12-17 2013-12-30 表示装置及びその試験回線修復方法

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CN201310693323.9A CN103680370A (zh) 2013-12-17 2013-12-17 显示装置及其测试线路修复方法
CN201310693323.9 2013-12-17

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111203631A (zh) * 2020-03-12 2020-05-29 苏州晶振智能科技有限公司 一种显示屏智能检测激光修复方法
CN112289836A (zh) * 2020-10-26 2021-01-29 上海天马有机发光显示技术有限公司 显示面板及显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107884693A (zh) * 2017-11-06 2018-04-06 武汉华星光电半导体显示技术有限公司 电气特性测试方法
US10565912B2 (en) 2017-11-06 2020-02-18 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Electrical characteristics inspection method
CN109741699B (zh) * 2019-01-22 2022-03-08 Tcl华星光电技术有限公司 用于显示面板的检测设备
CN111798779B (zh) * 2019-07-26 2022-07-29 友达光电股份有限公司 用于可挠性显示面板的备用线路系统及其自动切换方法
CN114360439B (zh) 2020-09-30 2022-12-20 荣耀终端有限公司 一种显示装置、驱动芯片及电子设备
CN113516917B (zh) * 2021-05-26 2023-05-12 京东方科技集团股份有限公司 一种显示面板、显示装置及断线修复方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102361A (en) * 1989-01-23 1992-04-07 Sharp Kabushiki Kaisha Method for the manufacture of active matrix display apparatuses
CN101059636A (zh) * 2006-04-21 2007-10-24 株式会社日立显示器 液晶显示装置
JP2007292878A (ja) * 2006-04-21 2007-11-08 Hitachi Displays Ltd 液晶表示装置及びその製造方法
CN101191964A (zh) * 2006-11-27 2008-06-04 中华映管股份有限公司 像素结构及其修补方法
CN101382709A (zh) * 2007-09-04 2009-03-11 上海广电Nec液晶显示器有限公司 一种液晶显示器薄膜晶体管结构
CN102692774A (zh) * 2012-05-23 2012-09-26 深圳市华星光电技术有限公司 液晶显示面板
CN103345093A (zh) * 2013-06-28 2013-10-09 京东方科技集团股份有限公司 像素单元、阵列基板及其制造、修复方法和显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723845B2 (en) * 2010-02-08 2014-05-13 Sharp Kabushiki Kaisha Display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5102361A (en) * 1989-01-23 1992-04-07 Sharp Kabushiki Kaisha Method for the manufacture of active matrix display apparatuses
CN101059636A (zh) * 2006-04-21 2007-10-24 株式会社日立显示器 液晶显示装置
JP2007292878A (ja) * 2006-04-21 2007-11-08 Hitachi Displays Ltd 液晶表示装置及びその製造方法
CN101191964A (zh) * 2006-11-27 2008-06-04 中华映管股份有限公司 像素结构及其修补方法
CN101382709A (zh) * 2007-09-04 2009-03-11 上海广电Nec液晶显示器有限公司 一种液晶显示器薄膜晶体管结构
CN102692774A (zh) * 2012-05-23 2012-09-26 深圳市华星光电技术有限公司 液晶显示面板
CN103345093A (zh) * 2013-06-28 2013-10-09 京东方科技集团股份有限公司 像素单元、阵列基板及其制造、修复方法和显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111203631A (zh) * 2020-03-12 2020-05-29 苏州晶振智能科技有限公司 一种显示屏智能检测激光修复方法
CN112289836A (zh) * 2020-10-26 2021-01-29 上海天马有机发光显示技术有限公司 显示面板及显示装置

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EA201690996A1 (ru) 2016-10-31
KR20160060106A (ko) 2016-05-27
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CN103680370A (zh) 2014-03-26
JP2016538590A (ja) 2016-12-08
KR101894523B1 (ko) 2018-09-04
GB2534317A (en) 2016-07-20
EA031911B1 (ru) 2019-03-29

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