WO2015087997A1 - 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 - Google Patents

半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 Download PDF

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Publication number
WO2015087997A1
WO2015087997A1 PCT/JP2014/082947 JP2014082947W WO2015087997A1 WO 2015087997 A1 WO2015087997 A1 WO 2015087997A1 JP 2014082947 W JP2014082947 W JP 2014082947W WO 2015087997 A1 WO2015087997 A1 WO 2015087997A1
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Prior art keywords
electrode
semiconductor device
mosfet chip
external electrode
mosfet
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PCT/JP2014/082947
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English (en)
French (fr)
Japanese (ja)
Inventor
哲也 石丸
森　睦宏
順一 坂野
航平 恩田
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Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Power Semiconductor Device Ltd
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Application filed by Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Power Semiconductor Device Ltd
Priority to US15/102,771 priority Critical patent/US10319849B2/en
Priority to CN201480067332.XA priority patent/CN105814785B/zh
Priority to EP14870416.6A priority patent/EP3082243A4/en
Publication of WO2015087997A1 publication Critical patent/WO2015087997A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips

Definitions

  • the rectifying element using the diode has a problem that the loss is large because the diode has a built-in potential.
  • a rectifying element using synchronous rectification of a MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the MOSFET has no built-in potential and has a low loss because a forward current rises from 0V. That is, since the MOSFET does not apply a voltage to pass the same current, the loss is reduced.
  • FIG. 24 is a diagram showing forward current / voltage characteristics of a rectifying device using the MOSFET of the present invention and a rectifying device using a conventional diode.
  • the rectifying element S1 includes a base electrode 101 having a circular outer peripheral portion 101s in a top view, a pedestal 102 provided above the base electrode 101, a MOSFET chip 103 mounted on the pedestal 102, and a control.
  • the circuit chip 104, the capacitor 105, and the lead electrode 107 (see FIG. 2) mounted on the MOSFET chip 103 are provided.
  • the comparator 116 compares the voltage relationship between the H terminal (lead electrode 107) and the L terminal (base electrode 101), and the gate driver 117 turns the MOSFET chip 103 on / off.
  • the capacitor 105 supplies a power supply voltage to the comparator 116 and the gate driver 117 via the power supply terminals 116v and 117v, respectively, using the stored charge.
  • the circuit shown in FIG. 4 is an example of a control circuit that realizes the rectifying element S1 of the present invention, and is not limited to this.
  • a differential amplifier that detects and amplifies a difference between input signals may be used, or on / off may be controlled by the direction of the current flowing through the MOSFET chip 103. Further, power may be supplied from the outside instead of the capacitor 105 shown in FIG.
  • the insulating substrate 106 is disposed only under the high-voltage side terminal 110 of the capacitor 105, A metal plate 120 or the like may be disposed under the side terminal 111 to electrically connect the base electrode 101 and the low voltage side terminal 111 of the capacitor 105. By doing so, the area required for connection between the base electrode 101 and the low voltage side terminal 111 of the capacitor 105 can be reduced.
  • the adhesion between the MOSFET chip 103 and the control circuit chip 104 and the resin 108 is enhanced, and the occurrence of defects such as solder cracks and chip cracks occurring during the thermal fatigue test or the temperature cycle test is suppressed, and the rectifying element S1 Can improve the reliability.
  • the groove 101m and / or JCR may be applied to the rectifying element S1 of the embodiment and rectifying elements S12 and S2 described later.
  • a Zener diode chip 121 is disposed on the pedestal 102 at a position adjacent to the MOSFET chip 103.
  • the cathode electrode 121c on the lower surface of the Zener diode chip 121 is used as the base electrode 101
  • the anode electrode 121a on the upper surface of the Zener diode chip 121 is used as the lead electrode 107 as shown in FIG. 109 is electrically connected.
  • a pin with spring 146A and a pin with spring 146B are fixed by a copper bar 147a.
  • the pin 146A with a spring has a terminal 146a1 at the lower part, a spring 146b1 at the center, and a fixing part 146c1 at the upper part.
  • the spring-loaded pin 146B has a terminal 146a2 at the lower part, a spring 146b2 at the center, and a fixing part 146c2 at the upper part.
  • the circuit configuration and circuit operation of the rectifying element S2 of the synchronous rectification MOSFET according to the second embodiment are the same as the circuit configuration and circuit operation of the rectifying element S2 of the synchronous rectification MOSFET according to the first embodiment described with reference to FIG. is there.
  • the design cost and the development cost can be reduced, and the same test is performed. Test costs can also be reduced.
  • the cost can be reduced by mass production of the same parts and the same circuit.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
PCT/JP2014/082947 2013-12-12 2014-12-12 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置 Ceased WO2015087997A1 (ja)

Priority Applications (3)

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US15/102,771 US10319849B2 (en) 2013-12-12 2014-12-12 Semiconductor device, and alternator and power conversion device which use same
CN201480067332.XA CN105814785B (zh) 2013-12-12 2014-12-12 半导体装置、以及使用该半导体装置的交流发电机和电力变换装置
EP14870416.6A EP3082243A4 (en) 2013-12-12 2014-12-12 Semiconductor device, and alternator and power conversion device which use same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-256619 2013-12-12
JP2013256619A JP6263014B2 (ja) 2013-12-12 2013-12-12 半導体装置、並びにそれを用いたオルタネータ及び電力変換装置

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EP (1) EP3082243A4 (https=)
JP (1) JP6263014B2 (https=)
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TW (1) TWI530080B (https=)
WO (1) WO2015087997A1 (https=)

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JP2019122211A (ja) * 2018-01-11 2019-07-22 株式会社デンソー 回転電機

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US11508808B2 (en) * 2018-10-11 2022-11-22 Actron Technology Corporation Rectifier device, rectifier, generator device, and powertrain for vehicle
JP7231407B2 (ja) * 2018-12-27 2023-03-01 株式会社 日立パワーデバイス 半導体装置およびそれを用いたオルタネータ
US11587853B2 (en) * 2019-09-03 2023-02-21 Mediatek Inc. Semiconductor devices having a serial power system
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FR3116966B1 (fr) * 2020-12-01 2024-11-29 Commissariat Energie Atomique Convertisseur de puissance
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CN118336561B (zh) * 2024-04-24 2024-09-20 浙江汇升智能电器有限公司 一种智能并网电力成套设备

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US20160315184A1 (en) 2016-10-27
JP2015116053A (ja) 2015-06-22
TW201531009A (zh) 2015-08-01
CN105814785B (zh) 2019-10-11
JP6263014B2 (ja) 2018-01-17
CN105814785A (zh) 2016-07-27
EP3082243A1 (en) 2016-10-19
EP3082243A4 (en) 2017-12-06
TWI530080B (zh) 2016-04-11
US10319849B2 (en) 2019-06-11

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