WO2015085977A8 - Verfahren zum auslesen einer resistiven speicherzelle und eine speicherzelle zur durchführung - Google Patents
Verfahren zum auslesen einer resistiven speicherzelle und eine speicherzelle zur durchführung Download PDFInfo
- Publication number
- WO2015085977A8 WO2015085977A8 PCT/DE2014/000551 DE2014000551W WO2015085977A8 WO 2015085977 A8 WO2015085977 A8 WO 2015085977A8 DE 2014000551 W DE2014000551 W DE 2014000551W WO 2015085977 A8 WO2015085977 A8 WO 2015085977A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- state
- reading
- memory cell
- ion
- pulse
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
- 230000003467 diminishing effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0047—Read destroying or disturbing the data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0052—Read process characterized by the shape, e.g. form, length, amplitude of the read pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/33—Material including silicon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
Landscapes
- Semiconductor Memories (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480066846.3A CN105980743B (zh) | 2013-12-11 | 2014-10-29 | 用于读取电阻存储单元的方法以及用于执行的存储单元 |
EP14828126.4A EP3080482A1 (de) | 2013-12-11 | 2014-10-29 | Verfahren zum auslesen einer resistiven speicherzelle und eine speicherzelle zur durchführung |
US15/039,217 US9865343B2 (en) | 2013-12-11 | 2014-10-29 | Method for reading out a resistive memory cell and a memory cell for carrying out the method |
JP2016538608A JP2017505504A (ja) | 2013-12-11 | 2014-10-29 | 抵抗変化型メモリセルの読出方法とその方法を実施するメモリセル |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013020517.4 | 2013-12-11 | ||
DE102013020517.4A DE102013020517B4 (de) | 2013-12-11 | 2013-12-11 | Verfahren zum Auslesen einer resistiven Speicherzelle und eine Speicherzelle zur Durchführung |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2015085977A1 WO2015085977A1 (de) | 2015-06-18 |
WO2015085977A8 true WO2015085977A8 (de) | 2016-05-26 |
Family
ID=52391718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2014/000551 WO2015085977A1 (de) | 2013-12-11 | 2014-10-29 | Verfahren zum auslesen einer resistiven speicherzelle und eine speicherzelle zur durchführung |
Country Status (6)
Country | Link |
---|---|
US (1) | US9865343B2 (de) |
EP (1) | EP3080482A1 (de) |
JP (1) | JP2017505504A (de) |
CN (1) | CN105980743B (de) |
DE (1) | DE102013020517B4 (de) |
WO (1) | WO2015085977A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8031518B2 (en) * | 2009-06-08 | 2011-10-04 | Micron Technology, Inc. | Methods, structures, and devices for reducing operational energy in phase change memory |
JP2023037910A (ja) * | 2021-09-06 | 2023-03-16 | キオクシア株式会社 | メモリデバイス |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4475098B2 (ja) * | 2004-11-02 | 2010-06-09 | ソニー株式会社 | 記憶素子及びその駆動方法 |
JP2008135659A (ja) * | 2006-11-29 | 2008-06-12 | Sony Corp | 記憶素子、記憶装置 |
DE102007015281A1 (de) * | 2007-03-29 | 2008-10-02 | Qimonda Ag | Resistiv schaltende Speicherzelle und Verfahren zum Betreiben einer resistiv schaltenden Speicherzelle |
JP5551769B2 (ja) * | 2009-05-29 | 2014-07-16 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | メモリ素子、積層体、メモリマトリックス及びそれらの動作方法 |
DE102009023153B4 (de) | 2009-05-29 | 2011-03-17 | Forschungszentrum Jülich GmbH | Speicherelement, Speichermatrix und Verfahren zum Betreiben |
JP2011054646A (ja) * | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体メモリ素子 |
US8199556B2 (en) * | 2009-09-22 | 2012-06-12 | Micron Technology, Inc. | Methods of reading and using memory cells |
DE102011012738B3 (de) | 2011-02-24 | 2012-02-02 | Forschungszentrum Jülich GmbH | Verfahren zum nichtdestruktiven Auslesen resistiver Speicherelemente und Speicherelement |
US8942025B2 (en) * | 2011-08-10 | 2015-01-27 | Panasonic Intellectual Property Management Co., Ltd. | Variable resistance nonvolatile memory element writing method |
US8804399B2 (en) * | 2012-03-23 | 2014-08-12 | Micron Technology, Inc. | Multi-function resistance change memory cells and apparatuses including the same |
JP5763004B2 (ja) * | 2012-03-26 | 2015-08-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2014238897A (ja) * | 2013-06-06 | 2014-12-18 | パナソニック株式会社 | 抵抗変化型不揮発性記憶装置およびその制御方法 |
GB2515568B (en) * | 2013-06-28 | 2016-05-18 | Ibm | Resistive random-access memory cells |
US9336870B1 (en) * | 2013-08-16 | 2016-05-10 | Sandia Corporation | Methods for resistive switching of memristors |
US20160012884A1 (en) * | 2014-07-11 | 2016-01-14 | Kabushiki Kaisha Toshiba | Memory system and method of operation of the same |
-
2013
- 2013-12-11 DE DE102013020517.4A patent/DE102013020517B4/de not_active Expired - Fee Related
-
2014
- 2014-10-29 EP EP14828126.4A patent/EP3080482A1/de not_active Withdrawn
- 2014-10-29 CN CN201480066846.3A patent/CN105980743B/zh not_active Expired - Fee Related
- 2014-10-29 WO PCT/DE2014/000551 patent/WO2015085977A1/de active Application Filing
- 2014-10-29 JP JP2016538608A patent/JP2017505504A/ja not_active Ceased
- 2014-10-29 US US15/039,217 patent/US9865343B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2017505504A (ja) | 2017-02-16 |
WO2015085977A1 (de) | 2015-06-18 |
EP3080482A1 (de) | 2016-10-19 |
US20170162260A1 (en) | 2017-06-08 |
CN105980743B (zh) | 2018-10-02 |
DE102013020517B4 (de) | 2015-06-25 |
CN105980743A (zh) | 2016-09-28 |
DE102013020517A1 (de) | 2015-06-11 |
US9865343B2 (en) | 2018-01-09 |
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