WO2016100260A3 - Method for chemical binding of the dielectric to the electrode after their assembly - Google Patents

Method for chemical binding of the dielectric to the electrode after their assembly Download PDF

Info

Publication number
WO2016100260A3
WO2016100260A3 PCT/US2015/065677 US2015065677W WO2016100260A3 WO 2016100260 A3 WO2016100260 A3 WO 2016100260A3 US 2015065677 W US2015065677 W US 2015065677W WO 2016100260 A3 WO2016100260 A3 WO 2016100260A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
dielectric film
dielectric
assembly
chemical binding
Prior art date
Application number
PCT/US2015/065677
Other languages
French (fr)
Other versions
WO2016100260A2 (en
Inventor
David Reginald Carver
Robert Glenn CARVER
Bradford Wesley FULFER
Jaime Hayes GIBBS
Sean Claudius HALL
Aaron Trent PRIDDY
Sean William Reynolds
Original Assignee
Carver Scientific, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/574,175 external-priority patent/US10199165B2/en
Application filed by Carver Scientific, Inc. filed Critical Carver Scientific, Inc.
Priority to EP15820006.3A priority Critical patent/EP3234969A2/en
Priority to JP2017528416A priority patent/JP6689851B2/en
Priority to SG11201704406WA priority patent/SG11201704406WA/en
Priority to AU2015362772A priority patent/AU2015362772B2/en
Priority to KR1020177019338A priority patent/KR102561229B1/en
Priority to CN201580069062.0A priority patent/CN107004505B/en
Publication of WO2016100260A2 publication Critical patent/WO2016100260A2/en
Publication of WO2016100260A3 publication Critical patent/WO2016100260A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/32—Wound capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention discloses the production of a high-permitivity, low- leakage energy storage device, such as a capacitor, and methods of making the energy storage device. The disclosed device includes electrically conductive first and second electrodes, and a sterically constrained dielectric film disposed between the first and second electrodes. The sterically constrained dielectric film comprises a plurality of polymeric molecules, and at least some of the polymeric molecules are bound to the first electrode. The disclosed device may include an insulative layer between the first electrode and the dielectric film and/or between the second electrode and the dielectric film.
PCT/US2015/065677 2014-12-17 2015-12-15 Energy storage device WO2016100260A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP15820006.3A EP3234969A2 (en) 2014-12-17 2015-12-15 Method for chemical binding of the dielectric to the electrode after their assembly
JP2017528416A JP6689851B2 (en) 2014-12-17 2015-12-15 Energy storage
SG11201704406WA SG11201704406WA (en) 2014-12-17 2015-12-15 Method for chemical binding of the dielectric to the electrode after their assembly
AU2015362772A AU2015362772B2 (en) 2014-12-17 2015-12-15 Method for chemical binding of the dielectric to the electrode after their assembly
KR1020177019338A KR102561229B1 (en) 2014-12-17 2015-12-15 Method for chemical binding of the dielectric to the electrode after their assembly
CN201580069062.0A CN107004505B (en) 2014-12-17 2015-12-15 Method for chemically bonding dielectric and electrode after assembly

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/574,175 2014-12-17
US14/574,175 US10199165B2 (en) 2012-08-30 2014-12-17 Energy storage device

Publications (2)

Publication Number Publication Date
WO2016100260A2 WO2016100260A2 (en) 2016-06-23
WO2016100260A3 true WO2016100260A3 (en) 2017-02-09

Family

ID=55069157

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/065677 WO2016100260A2 (en) 2014-12-17 2015-12-15 Energy storage device

Country Status (8)

Country Link
EP (1) EP3234969A2 (en)
JP (1) JP6689851B2 (en)
KR (1) KR102561229B1 (en)
CN (1) CN107004505B (en)
AU (1) AU2015362772B2 (en)
SG (1) SG11201704406WA (en)
TW (1) TWI713060B (en)
WO (1) WO2016100260A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11569036B2 (en) 2017-10-09 2023-01-31 Hitachi Energy Switzerland Ag Dielectric film and power capacitor comprising dielectric film
CN108922778A (en) * 2018-07-18 2018-11-30 清华大学 A kind of high performance capacitors membrane structure with inorganic/organic layer structure
CN108962595A (en) * 2018-07-18 2018-12-07 清华大学 A kind of large-scale preparation method of high-performance high temperature capacitors film
CN114181375B (en) * 2021-11-25 2023-10-13 五邑大学 Crosslinked quinone polymer and preparation method and application thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2908178A1 (en) * 2013-04-05 2014-10-02 Carver Scientific, Inc. Energy storage device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190828A (en) * 1986-02-18 1987-08-21 松下電器産業株式会社 Manufacture of metallized film capacitor
JP4882457B2 (en) * 2006-03-31 2012-02-22 富士通株式会社 Thin film capacitor and semiconductor device having the same
US7990679B2 (en) * 2006-07-14 2011-08-02 Dais Analytic Corporation Nanoparticle ultracapacitor
JP2008211060A (en) * 2007-02-27 2008-09-11 Fujifilm Corp Method of manufacturing substrate having metal film
US9011627B2 (en) 2007-10-05 2015-04-21 Carver Scientific, Inc. Method of manufacturing high permittivity low leakage capacitor and energy storing device
US8633289B2 (en) 2011-08-31 2014-01-21 Carver Scientific, Inc. Formation of [2,2]paracyclophane and related compounds and methods for the formation of polymers from cyclophanes
US8940850B2 (en) * 2012-08-30 2015-01-27 Carver Scientific, Inc. Energy storage device
JP2011029442A (en) * 2009-07-27 2011-02-10 Daikin Industries Ltd Film for film capacitor, film capacitor using the same and method of manufacturing the film and the film capacitor
JP5734069B2 (en) * 2011-04-13 2015-06-10 小島プレス工業株式会社 Film capacitor element, film capacitor, and method of manufacturing film capacitor element
JP5558446B2 (en) * 2011-09-26 2014-07-23 株式会社東芝 Photoelectric conversion device and manufacturing method thereof
CN103578747A (en) * 2012-08-09 2014-02-12 深南电路有限公司 Integrally-arranged capacitor and manufacturing method thereof
US20140210836A1 (en) * 2013-01-28 2014-07-31 Qualcomm Mems Technologies, Inc. Layer for reduced charge migration between mems layers
US20140295101A1 (en) * 2013-03-29 2014-10-02 Carver Scientific, Inc. High permittivity low leakage capacitor and energy storing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2908178A1 (en) * 2013-04-05 2014-10-02 Carver Scientific, Inc. Energy storage device

Also Published As

Publication number Publication date
AU2015362772A1 (en) 2017-06-15
KR20170095962A (en) 2017-08-23
JP2018503243A (en) 2018-02-01
KR102561229B1 (en) 2023-07-28
AU2015362772B2 (en) 2020-11-12
EP3234969A2 (en) 2017-10-25
CN107004505A (en) 2017-08-01
CN107004505B (en) 2020-01-03
WO2016100260A2 (en) 2016-06-23
JP6689851B2 (en) 2020-04-28
TW201640536A (en) 2016-11-16
SG11201704406WA (en) 2017-07-28
TWI713060B (en) 2020-12-11

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