WO2015021691A1 - Procédé pour une croissance de points quantiques de germanium, matériau composite de points quantiques de germanium et son application - Google Patents

Procédé pour une croissance de points quantiques de germanium, matériau composite de points quantiques de germanium et son application Download PDF

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WO2015021691A1
WO2015021691A1 PCT/CN2013/084881 CN2013084881W WO2015021691A1 WO 2015021691 A1 WO2015021691 A1 WO 2015021691A1 CN 2013084881 W CN2013084881 W CN 2013084881W WO 2015021691 A1 WO2015021691 A1 WO 2015021691A1
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substrate
graphene layer
germanium
quantum dots
graphene
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Chinese (zh)
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李振军
白冰
杨晓霞
王小伟
许应瑛
戴庆
裘晓辉
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国家纳米科学中心
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02499—Monolayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to the field of preparation of semiconductor quantum dots, and more particularly to a method for growing germanium quantum dots, germanium quantum dot composite materials, and applications thereof. Background technology
  • Quantum Dot is a quasi-zero-dimensional nanomaterial composed of a small number of atoms. Roughly speaking, the dimensions of the three dimensions of quantum dots are all below 100 nm, and the appearance is like a very small dot. The movement of internal electrons in all directions is limited, so the Quantum Confinement Effect is particularly remarkable. .
  • the movement of electrons in quantum dots in the three-dimensional direction is affected by the quantum confinement effect, so that the electronic density distribution inside the quantum dots appears as a separation function, and the forbidden band width of the quantum dots (E g , the lowest energy of the material conduction band)
  • E g the lowest energy of the material conduction band
  • the energy difference between the highest energy level of the grade and the valence band is significantly broadened relative to the bulk material (0.66 eV), thus exhibiting a series of novel photoelectric properties.
  • These characteristics can be controlled by controlling geometric parameters such as size, shape and density of quantum dots, which opens up an effective way for artificially regulating the photoelectric properties of materials.
  • Quantum dots have broad application prospects in the preparation of high-efficiency third-generation solar cells, adjustable photodetectors and quantum dot light-emitting diodes.
  • the size of a quantum dot can be compared with the Bohr radius of an exciton in a bulk material, a significant quantum confinement effect occurs. This size is generally around 10 nm, so how to use an effective method to obtain a uniform scale and shape.
  • Quantum dots are an unavoidable problem in applications.
  • the main methods are gas phase method and phase separation method. a technical method.
  • the first method mainly uses ultra-high vacuum chemical vapor deposition (UV-CVD) or molecular beam epitaxy (MBE) to deposit a gas source containing germanium atoms onto the substrate to realize the quantum dots on the substrate.
  • UV-CVD ultra-high vacuum chemical vapor deposition
  • MBE molecular beam epitaxy
  • the cleaning requirements for the substrate are high. It is generally necessary to pretreat the Si substrate and perform a substrate cleaning by chemical etching.
  • the typical process of the cleaning is as follows: 1 The Si tablets are sequentially cleaned with analytically pure toluene, carbon tetrachloride, acetone, and absolute ethanol for 3 times each time for about 3 minutes ; the cleaning interval is washed 3 times with deionized water.
  • the purpose of this step is to remove organic contaminants from the Si surface; 2 soak the Si tablets in a boiling mixture of H 2 S0 4 and 3 ⁇ 40 2 for 3 min, then rinse them 3 times with deionized water.
  • the purpose is to remove the residual metal and organic matter on the Si surface; 3 soak the Si wafer in a mixture of HF and C 2 H 5 OH for 1 min, rinse it with deionized water for 3 times, the purpose of this step is to use diluted HF acid.
  • the solution chemically etches off the Si0 2 layer and forms an H-passivated surface; 4
  • the cleaned Si wafer is blown dry with dry high-purity N 2 gas and introduced into a vacuum chamber for subsequent growth.
  • the cleaning process is very complicated, and it is cumbersome to introduce the cleaning process into the production line.
  • germanium quantum dots During the growth of germanium quantum dots, strict control and requirements are imposed on the substrate temperature, the flow rate of the gas source, the thickness of the buffer layer and the number of layers. These factors directly determine the size, morphology and morphology of the quantum dots. Physical properties such as density distribution also determine the final optical properties of quantum dot devices.
  • Another method is to grow ⁇ quantum dots by phase separation.
  • the main step is to first grow on the substrate.
  • a buffer layer of a certain thickness is grown, and then the tantalum layer and the matrix layer are alternately grown, and finally, the high temperature annealing is performed, and the growth of the tantalum quantum dots is realized by utilizing the characteristics that the crystal temperature of the tantalum layer is lower than that of the matrix layer material.
  • the thickness of the control layer (less than lOnm) is generally used to control the size of the quantum, and the purpose of alternately growing multiple layers (5 to 10 layers) can improve the uniformity of quantum dot distribution on the one hand, and on the other hand, Stacked quantum dot structure.
  • the biggest advantage of this method is that it can control the size of the quantum dots and prepare the laminated structure by controlling the thickness of the interlayer.
  • the key to preparing high-quality ⁇ quantum dots lies in two aspects: (1) high-quality uniform substrate interface is required, and there is a certain lattice mismatch between the substrate and the quantum dot material to be grown; (2) quantum dots are in the growth process.
  • the self-assembled growth mode is most advantageous.
  • germanium quantum dots which should be capable of producing high quality germanium quantum dots, and which is simple in process, easy to control, and can be industrially produced.
  • the invention has the advantages that the preparation process of the prior art quantum dots is complicated, the cleaning process of the substrate interface is complicated, the self-assembly is poor, and the control is not easy.
  • the object of the present invention is to provide a method for growing germanium quantum dots. The method uses a graphene layer having excellent photoelectric characteristics and an atomic-level smooth interface as a substrate, and does not require complicated cleaning of the substrate, thereby solving the problem that the prior art quantum dot preparation process is complicated and difficult to control.
  • a method for growing germanium quantum dots by growing germanium quantum dots on a graphene layer is a method for growing germanium quantum dots by growing germanium quantum dots on a graphene layer.
  • Graphene has excellent photoelectric properties and a smooth interface at the atomic level.
  • the present invention selects to grow germanium quantum dots thereon, avoiding conventional complicated cleaning steps and greatly simplifying the process flow.
  • phase fusion between graphene and germanium atoms is poor, which ensures the low matrix element content and low defect rate of germanium quantum dots. Meanwhile, graphene with atomic smooth interface can ensure the self-organized growth of germanium quantum dots formed thereon. Process, forming ⁇ quantum dots with good morphology and uniformity.
  • graphene as a substrate for growing graphene can effectively combine the band gap tunability of ⁇ quantum dots with the excellent photoelectric properties of graphene to obtain ⁇ quantum dots with excellent performance.
  • the method for growing the germanium quantum dots of the present invention comprises the following steps:
  • the substrate in which the graphene layer and the tantalum film are sequentially formed in the step (3) is annealed to grow germanium quantum dots.
  • FIG. 1 is a schematic flow chart of a method for growing a germanium quantum dot according to the present invention.
  • the present invention is not specifically limited to the substrate provided.
  • the purpose of the step (1) is to remove the contaminants of the substrate, including inorganic dust and organic pollution, to obtain a clean surface, which is a step (2) graphene layer.
  • the formation provides a good substrate.
  • the substrate (1) is selected from any one of a crystalline substrate, a glass substrate or a metal foil.
  • the crystalline substrate is preferably any one of Si GaN or A1 2 0 3 ;
  • the glass substrate is preferably any one of ordinary glass, quartz glass or tempered glass;
  • the metal foil is preferably from copper foil Any one of nickel foil or nickel-copper alloy metal foil.
  • the substrate (1) is a silicon wafer.
  • the cleaning step described in the step (1) is not specifically limited in the invention, and any method capable of removing contaminants from the substrate can be used in the present invention.
  • the cleaning step is repeated: tap water ultrasonic cleaning 3 5 min, ultrasonic cleaning with deionized water 3 5 min, ultrasonic cleaning in ethanol and/or acetone 5 10 min
  • Step (2) is a tiling interface for forming a graphene layer on a clean substrate. Its main purpose is to provide an atomic-level smooth interface for the growth of germanium quantum dots.
  • the present invention does not specifically limit the manner in which the graphene layer is formed on a clean substrate. Typical, but not limited, may be selected from directly growing a graphene layer on a substrate, or transferring an existing graphene layer to a substrate. .
  • the method for forming a graphene layer on the substrate of the step (1) according to the step (2) is: growing a graphene layer directly on the substrate of the step (1).
  • the method of growing the graphene layer is a chemical vapor deposition method.
  • the graphene layer has a thickness of 30 nm, for example, 4 nm, 9 nm, 18 nm, 23 nm, 27 or the like.
  • the typical operation steps of the chemical vapor deposition method are as follows: in a tubular furnace with a protective atmosphere, a carbon source organic substance (such as ethanol, ethylene, formazan, sucrose, etc.) is used as a carbon source, and heated to 1000 ° C, and The graphene layer grown on the substrate can be obtained by holding for 5 to 20 minutes.
  • a carbon source organic substance such as ethanol, ethylene, formazan, sucrose, etc.
  • the method of forming the graphene layer on the substrate of the step (1) in the step (2) is: transferring the existing graphene layer to the substrate of the step (1).
  • the method for transferring the existing graphene layer is any one of a polymethyl methacrylate transfer method, a heat release tape transfer method or a polydimethylsiloxane transfer method, and preferably a polymethyl methacrylate Ester transfer method;
  • the graphene layer has a thickness of from 1 to 30 nm, for example, 4 nm, 9 nm, 18 nm, 23 nm, 27 mm, and the like.
  • the typical steps of transferring the graphene layer by the polymethyl methacrylate transfer method are as follows: First, a polymethyl methacrylate solution is poured into a mold, and then horizontally placed, and the solvent is toluene to form a polymethyl group. a film of methyl acrylate, which is then sequentially laminated with a glass sheet, a polyethylene terephthalate film, a copper sheet, a graphene, a polymethyl methacrylate film, a polyethylene terephthalate film, and a glass. The sheets were stacked and baked in an oven at 120 ° C for 2 hours, and then the upper and lower glass sheets and polyethylene terephthalate film were removed.
  • the typical steps of transferring the graphene layer by the heat release tape transfer method are as follows: firstly, graphene is grown on the surface of the substrate with the metal catalyst layer; then the pyrolysis tape is adhered on the surface of the graphene; and then the metal can be dissolved. Solution, dissolve the metal layer; Finally, transfer the graphene-coated pyrolysis tape to the target position, and remove the tape by heating to realize the transfer of graphene.
  • a typical procedure for transferring the graphene layer by the polydimethylsiloxane transfer method is as follows: First, a polydimethylsiloxane (PDMS) stamp is attached to a Ni substrate on which graphene sheets are grown; FeC13 or HN0 3 corrodes the Ni matrix, so that graphene can be attached to PDMS; PDMS is printed on other substrates, PDMS is torn off, and graphene can be successfully transferred.
  • PDMS polydimethylsiloxane
  • Step (3) is to form a tantalum film on the graphene layer in the step (2), the main purpose of which is to uniformly divide the germanium atoms on the graphene layer to ensure that the germanium quantum dots formed during the subsequent annealing have Better morphology and uniformity.
  • Step (3) The method for forming the tantalum film is selected from the group consisting of CVD (Chemical Vapor Deposition), MBE (Molecule) Either beam epitaxial growth, PLD (pulse laser deposition) or RF magnetron sputtering.
  • CVD Chemical Vapor Deposition
  • MBE Microlecule
  • PLD pulse laser deposition
  • RF magnetron sputtering RF magnetron sputtering.
  • CVD Chemical Vapor Deposition
  • the method for forming a ruthenium film by CVD according to the present invention is typically, but not limited to,: placing a substrate (a substrate formed with a graphene layer) in a reaction chamber (such as a tube furnace) under a protective atmosphere condition
  • a gaseous reactant containing ruthenium element for example, Ge is introduced into the reaction chamber, maintained at a high temperature (e.g., 1000 ° C) for 20 minutes, and subjected to vapor phase chemical precipitation to obtain a ruthenium film formed on the graphene layer.
  • MBE Molecular Beam Epitaxy refers to placing a semiconductor substrate in an ultra-high vacuum chamber, and placing the single crystal material to be grown in the spray furnace separately according to the elements, respectively, and heating respectively to corresponding
  • the molecular stream ejected by the elements of the temperature can grow a very thin single crystal and an alternating superlattice structure of several substances on the above substrate, and the thickness can be as thin as the level of the monoatomic layer.
  • the method for forming a ruthenium film by the MBE of the present invention is typically, but not limited to,: placing a substrate (a substrate formed with a graphene layer) in an ultra-high vacuum chamber, placing the bismuth element in a spray furnace, and heating to At 300-600 ° C, a helium atomic stream is ejected to grow a tantalum film on the substrate.
  • PLD Pulsed Laser Deposition
  • the method for forming a ruthenium film of the PLD of the present invention is typically, but not limited to,: ⁇ pulsing a laser beam onto a target surface of a solid ruthenium target, causing the ruthenium atom to be rapidly plasmatized, and then sputtering onto the substrate (formed with graphite) On the base of the olefin layer).
  • Magnetron sputtering refers to the collision of electrons with Ar atoms during the flight to the substrate under the action of an electric field, causing them to ionize to produce Ar + ions and new electrons; new electrons fly toward the substrate, and Ar + ions Under the action of the electric field, it accelerates to the cathode target, and bombards the surface of the target with high energy to cause the target to be sputtered.
  • the method for forming a ruthenium film on the graphene layer according to the step (2) of the present invention is preferably a radio frequency magnetron sputtering method.
  • the conditions of the RF magnetron sputtering method are as follows: the target is a high-purity germanium target, and the sputtering RF power is 80 to 300 W, for example, 90 W, 97 W, 105 W, 136 W, 185 W, 245 W, 280 W, 362 W, 385W, etc., Ar gas flow rate is 10 ⁇ 50sccm, such as 13sccm, 15sccm, 22sccm, 29sccm, 35sccm, 42sccm, 47sccm, etc., deposition time is 60 ⁇ 1200s, such as 80s, 135s, 168s, 200s, 268s, 435s, 680s, 759s , 837s, 925s, 988, etc.
  • the tantalum film has a thickness of from 1 to 15 nm, for example, 4 nm, 9 nm, 13 nm, 17 nm, or the like.
  • Step (4) is to anneal the substrate in which the graphene layer and the tantalum film are sequentially formed in the step (3), and the purpose is to realize the quantum dot of the germanium by utilizing the low crystallization temperature of the germanium layer relative to the graphene layer.
  • Figure 2 shows an atomic force microscope image of a Ge quantum dot obtained by the same growth process on a Si substrate and a graphene-modified interface. It can be seen that the Ge quantum dots obtained at the graphene interface are uniform in size, which is superior to Ge quantum dots grown on Si substrates.
  • the temperature and time of the annealing described in the step (4) can be selected by those skilled in the art according to actual conditions, such as the base material, the thickness of the ruthenium film, and the like.
  • the annealing temperature of the step (4) is 500 to 800 ° C, for example, 550 ° C, 590 ° C, 635 ° C, 700 ° C, 726 ° C, 758 ° C, 778 ° C, 790 °C, etc.
  • annealing time is l ⁇ 20min, such as 3min, 6min, 9min, 14min, 18min, 19min and so on.
  • the annealing step should be carried out in a protective atmosphere to prevent the helium atoms from reacting with the active gas such as oxygen at a high temperature. Therefore, the annealing is carried out in a protective atmosphere or a vacuum atmosphere, preferably in a vacuum atmosphere, preferably further The pressure was carried out in a vacuum atmosphere of 10 _ 2 Pa.
  • the step of "annealing the substrate in which the graphene layer and the tantalum film are sequentially formed by the step (3)" in the step (4) of the present invention is as follows: a graphene layer having a thickness of 10 nm is formed. Silicon LOnm thick germanium directly deposited on a substrate film, and then at 600 ° C, a vacuum (10_ 2 Pa) to obtain annealed 20min germanium quantum dots.
  • the method includes the following steps:
  • the substrate in which the graphene layer and the tantalum film are sequentially formed in the step (3) is annealed at 500 to 800 ° C for 1 to 20 minutes to grow a germanium quantum dot.
  • the tantalum quantum dot composite material is a graphene-germanium quantum dot composite material, and the forbidden band width (E g ) can vary between 0.66 and 3.25 eV.
  • Figure 3 shows a typical photoluminescence spectrum of a graphene Ge quantum dot composite structure with a band gap that can be broadened from 0.66 eV to 3.25 eV for bulk material.
  • the present invention has the following beneficial effects:
  • FIG. 1 is a schematic flow chart of a method for growing a germanium quantum dot according to the present invention.
  • Figure 2 is an AFM image of Ge quantum dots grown on the surface of graphene and Si substrates.
  • Figure 3 is a typical photoluminescence spectrum of a graphene and Ge quantum dot composite structure.
  • a method for growing a germanium quantum dot includes the following steps:
  • step (2) placing the silicon substrate obtained by the cleaning of step (1) in the reaction chamber of the tube furnace, sealing the reaction chamber, Argon gas is introduced to ensure that the tube furnace is in an argon atmosphere, and the formazan gas is introduced as a carbon source gas.
  • the reaction chamber is heated to 1000 ° C and held for 20 minutes. After the reaction is completed, the reaction chamber is cooled under an argon atmosphere.
  • the substrate in which the graphene layer and the tantalum film were sequentially formed in the step (3) was annealed at 800 ° C for 20 minutes to grow a germanium quantum dot.
  • a graphene-germanium quantum dot composite material having a silicon substrate, a graphene layer grown on a silicon substrate, and a structure of germanium quantum dots grown on the graphene layer is finally obtained.
  • the forbidden band width (E g ) of the graphene-germanium quantum dot composite may vary from 0.66 to 3.25 eV.
  • a method for growing a germanium quantum dot includes the following steps:
  • step (2) The silicon substrate obtained by the cleaning of step (1) is placed in the reaction chamber of the tube furnace, the reaction chamber is sealed, and argon gas is introduced to ensure that the tube furnace is in an argon atmosphere, and the formazan gas is introduced as carbon.
  • the source gas, the reaction chamber is heated to 1200 ° C, and kept for 15 min, the reaction is completed, and the reaction chamber is cooled under an argon atmosphere to obtain a graphene layer grown on the substrate, and the thickness of the graphene layer is 1 to 8 nm. ;
  • step (3) Using a high-purity tantalum target as a target, at 80W sputtering RF power, lOsccm Ar gas flow, using RF magnetron sputtering, the graphite grown on the substrate obtained in step (2) Depositing on the olefin layer for 60 s to form a ruthenium film having a thickness of 3 to 10 nm;
  • the substrate obtained by the step (3) in which the graphene layer and the tantalum film are sequentially formed is at 500 ° C, Annealing for 1 min, growing ⁇ quantum dots.
  • a graphene-germanium quantum dot composite material having a silicon substrate, a graphene layer grown on a silicon substrate, and a structure of germanium quantum dots grown on the graphene layer is finally obtained.
  • the forbidden band width (E g ) of the graphene-germanium quantum dot composite may vary from 0.66 to 3.25 eV.
  • a method for growing a germanium quantum dot includes the following steps:
  • the substrate in which the graphene layer and the tantalum film were sequentially formed in the step (3) was annealed at 700 ° C for 17 minutes to grow a germanium quantum dot.
  • a graphene-germanium quantum dot composite material having a silicon substrate, a graphene layer grown on a silicon substrate, and a structure of germanium quantum dots grown on the graphene layer is finally obtained.
  • the forbidden band width (E g ) of the graphene-germanium quantum dot composite may vary from 0.66 to 3.25 eV.
  • Example 4 Provide a glass substrate, which is respectively ultrasonically cleaned with tap water for 4 minutes, ultrasonic cleaning with deionized water for 5 minutes, ultrasonic cleaning with acetone for 13 minutes, and repeated ultrasonic cleaning for 4 times to remove the contamination on the substrate.
  • the substrate in which the graphene layer and the tantalum film were sequentially formed in the step (3) was annealed at 600 ° C for 14 minutes to grow a germanium quantum dot.
  • a graphene-germanium quantum dot composite material having a silicon substrate, a graphene layer grown on a silicon substrate, and a structure of germanium quantum dots grown on the graphene layer is finally obtained.
  • the forbidden band width (E g ) of the graphene-germanium quantum dot composite may vary from 0.66 to 3.25 eV.
  • the present invention illustrates the detailed process equipment and process flow of the present invention by the above embodiments, but the present invention is not limited to the above detailed process equipment and process flow, that is, it does not mean that the present invention must rely on the above detailed process equipment and The process can only be implemented. It should be apparent to those skilled in the art that any modifications of the present invention, equivalent substitution of the various materials of the products of the present invention, addition of auxiliary components, selection of specific means, and the like, are all within the scope of the present invention.

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Abstract

La présente invention porte sur un procédé pour une croissance de points quantiques de germanium. Dans le procédé, des points quantiques de germanium subissent une croissance sur des interfaces de graphène ayant différentes quantités de couches. Selon la présente invention, des interfaces de graphène à uniformité très élevée sont introduites sur une surface de substrat conventionnelle, des points quantiques Ge subissent une croissance sur les interfaces, et des processus de nettoyage compliqués pour obtenir des interfaces à qualité élevée sont supprimés, et des flux de processus sont simplifiés ; de plus, le contenu d'élément de faible matrice et le faible taux de défaut des points quantiques de germanium sont assurés, un processus de croissance à auto-organisation des points quantiques de germanium est assuré, et des points quantiques de germanium ayant une bonne forme et une bonne uniformité sont formés.
PCT/CN2013/084881 2013-08-13 2013-10-09 Procédé pour une croissance de points quantiques de germanium, matériau composite de points quantiques de germanium et son application WO2015021691A1 (fr)

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