WO2015014839A1 - Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence - Google Patents

Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence Download PDF

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Publication number
WO2015014839A1
WO2015014839A1 PCT/EP2014/066277 EP2014066277W WO2015014839A1 WO 2015014839 A1 WO2015014839 A1 WO 2015014839A1 EP 2014066277 W EP2014066277 W EP 2014066277W WO 2015014839 A1 WO2015014839 A1 WO 2015014839A1
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WO
WIPO (PCT)
Prior art keywords
electromagnetic waves
plasma
waveguide
plasma chamber
dielectric
Prior art date
Application number
PCT/EP2014/066277
Other languages
German (de)
English (en)
Inventor
Stephan Schneider
Original Assignee
Eeplasma Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Eeplasma Gmbh filed Critical Eeplasma Gmbh
Priority to EP14744363.4A priority Critical patent/EP3011807B1/fr
Publication of WO2015014839A1 publication Critical patent/WO2015014839A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

Definitions

  • the present invention relates to a device for the treatment of process gases in a plasma excited by in particular high-frequency electromagnetic waves comprising a plasma chamber, a generator for generating the electromagnetic waves and a waveguide arrangement for Supply of electromagnetic waves into the plasma chamber. Furthermore, the invention relates to a method for the treatment of process gases in a plasma, are generated in the electromagnetic waves and fed to a plasma chamber.
  • Plasma devices have been known in the art for decades and are used as external plasma sources for isotropically etching different layers on semiconductor substrates and removing damaged silicon layers on the back side of the semiconductor substrate after mechanical thin grinding of the silicon substrates. Furthermore, external plasma sources are used for cleaning process chambers for coating processes of so-called chemical vapor deposition processes with and without plasma assistance. Further, they are used for conditioning surfaces of plastics and other materials by excited oxygen, nitrogen or hydrogen. Another field of application is the decomposition of grossly polluting greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc., which are used as process gases during the production of integrated circuits and are only partially consumed in the individual process steps.
  • greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc.
  • the object of the invention is to provide a device and a method for the treatment of process gases in a plasma, which is suitable by its design features and method steps, even at higher powers of the electromagnetic waves to distribute the supplied energy as evenly as possible over the gas discharge chamber.
  • the device comprises a plasma chamber which is lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for supplying the electromagnetic waves into the plasma chamber, wherein the waveguide arrangement has at least two feed points, each having an E-field waveguide branch have to feed the electromagnetic waves as continuous waves in the dielectric.
  • a multi-sided feeding of the electromagnetic waves is advantageous over a one-sided feed, as this can form a comparatively uniform plasma density over the entire circumference of the plasma chamber.
  • the dielectric, in particular a hollow cylinder, in particular a hollow ceramic cylinder, which covers the inner surfaces of a plasma chamber housing, is therefore uniformly thermally stressed. As a result, a large process window with regard to the parameters gas flow, process pressure and fed microwave power can be ensured.
  • the abovementioned advantage is achieved to a particular extent if the feed points are arranged distributed uniformly around the plasma chamber or the dielectric. With two feed sources, these are then preferably arranged on opposite sides of the plasma chamber. In the case of an even number of feed sources, two feed sources are preferably arranged on opposite sides of the plasma chamber. In principle, however, an odd number of supply sources is possible. An even distribution is also present when the feed sources are arranged substantially uniformly distributed around the plasma chamber.
  • the waveguide arrangement is designed in such a way that it is structurally coherently superimposed by different electromagnetic waves fed in in particular to all feed points, in particular in the center of the plasma chamber.
  • the device may be designed such that the electromagnetic waves fed by the feed points are generated by a single or common generator.
  • the waveguide arrangement may have at least one waveguide branch in order to supply the electromagnetic waves to a plurality of feed points, the lengths of the respective sections of the waveguide arrangement being different from the respective waveguide branch to the respective feed points equal to or a multiple of half the wavelength of the electromagnetic waves ,
  • the respective feed point has an oscillator element which forms an oscillator together with the respective E-field waveguide branching.
  • the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement rests against the dielectric is completely covered by the dielectric. In this way, a complete supply of the energy of the electromagnetic waves to the dielectric can also be ensured.
  • This aspect is also claimed independently of the at least two feed points.
  • the invention therefore also relates to a device for treating process gases in an electromagnetic wave excited plasma, comprising a plasma chamber lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for feeding the electromagnetic waves into the plasma chamber the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement bears against the dielectric, is completely covered by the dielectric.
  • an ignition device for igniting a plasma is provided in the plasma chamber, wherein the ignition device comprises an ignition element with at least one elongated ignition section. With such an ignition device ignition of the plasma can be achieved even at low power levels of the supplied electromagnetic wave.
  • the ignition device in particular the ignition element, be designed such that the longitudinal axis of the or at least one ignition section is oriented at an angle of at most 45 °, in particular at least substantially parallel to the propagation direction of the electromagnetic waves at least one feed point.
  • the invention relates to a method for the treatment of process gases in a plasma excited by electromagnetic waves, in which generates the electromagnetic waves and one lined with a dielectric Plasma chamber are supplied such that the electromagnetic waves are fed to at least two, each having an E-field waveguide branching feed points as continuous waves in the dielectric. Further developments of the method according to the invention result in an analogous manner from the developments of the device according to the invention.
  • Electromagnetic waves in particular microwaves, in particular with the customary and ex officio approved frequencies of 2.45 GHz, 5.8 GHz and 915 MHz, are used in the device and the method according to the invention.
  • FIG. 1 is a schematic representation of a plasma apparatus
  • FIG. 2 is a schematic representation of a plasma apparatus according to the invention
  • Fig. 3 is a schematic representation of another invention
  • FIG. 4 shows an atmospheric pressure plasma device according to the invention in FIG.
  • FIG. 5 shows the atmospheric pressure plasma apparatus of FIG. 4 in longitudinal section
  • FIG. 6 shows a low-pressure plasma device according to the invention in cross-section
  • FIG. 7 shows the low-pressure plasma apparatus from FIG. 6 in longitudinal section, FIG.
  • FIG. 8 shows an ignition apparatus for the atmospheric pressure plasma apparatus of FIGS. 4, and
  • the electromagnetic waves are generated according to Fig. 1 to 3 in a microwave generator 1 1 and passed by a waveguide 12 via a tuning device 13 to a plasma chamber housing 14, in which a ceramic cylinder 1 6 or a tube or a tube is inserted.
  • the electromagnetic waves are conducted directly to the plasma chamber housing 14 (FIG. 1) or split in pairs at a particular first waveguide branch 15a and, if desired, branched again at two further waveguide branches 15b and guided to the plasma chamber housing 14 and then to the ceramic cylinder 1 6, where they can propagate through E-field waveguide branches 18 as traveling waves in the ceramic (FIGS. 2 and 3).
  • the boundaries of the electromagnetic waves in the ceramic form on the one hand the inner surfaces of the plasma chamber housing 14 made of metal and on the other hand a layer of high electron concentration in the plasma, which forms near the inner surface of the ceramic cylinder 1 6.
  • FIGS. 4 and 5 describe a first device according to the invention and a method which is predominantly used under atmospheric pressure, before at a pressure ranging between 10 kPa and 1 MPa, the electromagnetic wave in the present device being supplied to the plasma chamber 25 from both sides.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • a double-sided feed by means of constructive coherent waves 17 is advantageous over a one-sided feeding of the microwave, as this already forms a perfect coaxial TM mode 19 at the feed plane, the plasma over a very large process window well stabilized in terms of gas flow and fed microwave power.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is apparent from Figs. 4 and 5, the inner cross section of the rectangular waveguide 12 is completely covered at the feed points of the ceramic cylinder 1 6.
  • an oscillator pin 28 is advantageous, wherein in each case an oscillator is formed, which consists of an E-field Waveguide branch 18 in the ceramic cylinder 1 6 and the adjacent oscillator pin 28 consists.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 in the ceramic cylinder 1 6.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining tuning of the plasma devices in FIGS. 1 to 3 takes place via the tuning devices 13.
  • the process gas is introduced through in particular two gas inlets 21 tangentially to the ceramic cylinder 1 6 in the plasma chamber 25 to generate there a rotating flow toward the gas outlet 24.
  • the plasma is ignited by an igniter 37, in detail 37a or 37b (FIGS. 8 and 9), and extends in a frusto-conical shape over the entire length of the ceramic cylinder 16 to a reactor cylinder 34 which is made of a heat-resistant metal alloy. exists.
  • a further device according to the invention and a method is described, which is mainly used in the low-pressure region, preferably at a pressure in the range between 10 Pa and 1500 Pa, particularly preferably at a pressure in the range between 30 Pa and 300 Pa, wherein the electromagnetic wave is supplied in the present device from both sides of the plasma chamber 25, in which case the electric field of the shaft is perpendicular to the axis of the ceramic cylinder 1 6.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • an H-mode of the electromagnetic wave may be formed with a waveguide surface formed by the inner surface 29 of the plasma chamber housing 14 and the opposite surface by the high plasma density 35 near the ceramic surface in the plasma chamber 25.
  • a double-sided feed by means of constructive coherent shafts 17 is advantageous over a one-sided feed of the microwave, as a uniform plasma density is thereby formed over the entire circumference of the ceramic cylinder 16, which results in uniform thermal loading of the ceramic cylinder 16 This allows a very large process window in terms of gas flow, process pressure and fed microwave power.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is apparent from Figs. 6 and 7, the inner cross section of the rectangular waveguide 12 at the feed points of the ceramic cylinder 1 6 is completely covered.
  • an oscillator pin 28 is advantageous, in each case an oscillator is formed, which consists of an E-field waveguide branch 18 in the ceramic cylinder 1 6 and the adjacent oscillator pin 28.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 in the ceramic cylinder 1 6.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining tuning of the plasma devices in FIGS. 1 to 3 takes place via the tuning devices 13.
  • the process gas is introduced through two gas inlets 22 and 23, wherein the gas inlet 22 opens on the back of the ceramic cylinder 1 6, and the gas inlet 23 opposite the gas outlet 24.
  • the gas inlet 22 on the back of the ceramic cylinder 1 6 is used for better cooling of the ceramic cylinder first 6 in the case of the operation of the plasma device at very low pressure.
  • ceramic components 26 are additionally inserted for sealing the gas inlet 22, which seal the process gas from the environment by means of vacuum seals 36.
  • a gas inlet is provided which enters the plasma chamber in the area of the cylindrical surface of the ceramic cylinder.
  • Igniter devices 37 are shown in FIGS. 8 and 9, in particular for the device in FIGS. 4 and 5, which is predominantly used for plasma under atmospheric pressure, wherein in FIG. 8 a rectangular plate 37a with rounded edges in FIG its longitudinal axis is aligned with the directions of incidence of the electromagnetic wave. To ignite the plasma, this plate 37a, for example by means of a rod, raised in the plane of the rectangular waveguide 14, and there is a corresponding field strength in the center of the plate 37a, the ignition of the plasma even at low power of the fed electromagnetic wave is sufficient.
  • the plate 37a may also be sharpened at its ends arrow-shaped or semi-circular shaped.
  • a star-shaped plate 37b is shown with 6 ends, whose ends are formed as well as the ends of the plate 37a.
  • the advantage of plate 37b over plate 37a is given by the fact that in each rotational position of the plate 37b, a reliable ignition of the plasma takes place.
  • the ignition device 37 may also have 5, 7, 8 and even more ends.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un dispositif pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques, le dispositif comprenant une chambre à plasma qui est revêtue d'un diélectrique, un générateur pour générer les ondes électromagnétiques et un système de conducteurs creux pour amener les ondes électromagnétiques dans la chambre à plasma, le système de conducteurs creux présentant au moins deux points d'injection présentant chacun un embranchement de conducteur creux de champ électrique pour injecter les ondes électromagnétiques comme ondes continues dans le diélectrique.
PCT/EP2014/066277 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence WO2015014839A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP14744363.4A EP3011807B1 (fr) 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013215252.3 2013-08-02
DE102013215252.3A DE102013215252A1 (de) 2013-08-02 2013-08-02 Vorrichtung und Verfahren zur Behandlung von Prozessgasen in einem Plasma angeregt durch elektromagnetische Wellen hoher Frequenz

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WO2015014839A1 true WO2015014839A1 (fr) 2015-02-05

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EP (1) EP3011807B1 (fr)
DE (1) DE102013215252A1 (fr)
WO (1) WO2015014839A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015215858A1 (de) 2015-08-20 2017-03-09 Siltronic Ag Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017125723A1 (de) 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls
EP4108647A1 (fr) 2021-06-21 2022-12-28 eeplasma GmbH Procédé de fabrication de particules à noyau et à enveloppe chargées en engrais liquide
CN114845455A (zh) * 2022-05-07 2022-08-02 季华实验室 微波等离子体化学气相沉积装置及系统

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EP0874537A1 (fr) * 1997-04-25 1998-10-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Dispositif d'excitation d'un gaz par plasma d'onde de surface et installation de traitement de gaz incorporant un tel dispositif
US6198224B1 (en) * 1996-01-05 2001-03-06 Ralf Spitzl Microwave plasma generator with the short cross-sectional side of the resonator parallel to the chamber axis
US20130002137A1 (en) * 2011-06-28 2013-01-03 Amarante Technologies, Inc. Gas conversion system
WO2013029593A2 (fr) * 2011-08-31 2013-03-07 Martin Weisgerber Dispositif de production de plasma micro-ondes thermodynamiquement froid

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SU397139A1 (ru) * 1971-01-25 1975-03-05 Устройство дл возбуждени электромагнитных волн в плазме
US5230740A (en) * 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
JP3129814B2 (ja) * 1992-01-17 2001-01-31 新日本無線株式会社 マイクロ波プラズマ装置
DE69318480T2 (de) * 1992-06-23 1998-09-17 Nippon Telegraph & Telephone Plasmabearbeitungsgerät
US5606571A (en) * 1994-03-23 1997-02-25 Matsushita Electric Industrial Co., Ltd. Microwave powered gas laser apparatus
JPH11162956A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd プラズマ処理装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198224B1 (en) * 1996-01-05 2001-03-06 Ralf Spitzl Microwave plasma generator with the short cross-sectional side of the resonator parallel to the chamber axis
EP0874537A1 (fr) * 1997-04-25 1998-10-28 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Dispositif d'excitation d'un gaz par plasma d'onde de surface et installation de traitement de gaz incorporant un tel dispositif
US20130002137A1 (en) * 2011-06-28 2013-01-03 Amarante Technologies, Inc. Gas conversion system
WO2013029593A2 (fr) * 2011-08-31 2013-03-07 Martin Weisgerber Dispositif de production de plasma micro-ondes thermodynamiquement froid

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015215858A1 (de) 2015-08-20 2017-03-09 Siltronic Ag Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium

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Publication number Publication date
DE102013215252A1 (de) 2015-02-05
EP3011807A1 (fr) 2016-04-27
EP3011807B1 (fr) 2017-11-15

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