WO2019233703A1 - Dispositif de traitement au plasma comprenant une source de plasma à micro-ondes linéaire et un dispositif de conduite de gaz - Google Patents

Dispositif de traitement au plasma comprenant une source de plasma à micro-ondes linéaire et un dispositif de conduite de gaz Download PDF

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Publication number
WO2019233703A1
WO2019233703A1 PCT/EP2019/062043 EP2019062043W WO2019233703A1 WO 2019233703 A1 WO2019233703 A1 WO 2019233703A1 EP 2019062043 W EP2019062043 W EP 2019062043W WO 2019233703 A1 WO2019233703 A1 WO 2019233703A1
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Prior art keywords
plasma
plasma source
region
gas
opening
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PCT/EP2019/062043
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German (de)
English (en)
Inventor
Joachim Mai
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Meyer Burger (Germany) Gmbh
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Publication of WO2019233703A1 publication Critical patent/WO2019233703A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges

Definitions

  • Plasma treatment apparatus with a linear microwave plasma source and a gas guiding device
  • the invention relates to a plasma treatment device with a linear microwave plasma source and a gas guiding device.
  • Linear microwave plasma sources consist of a rod-shaped microwave antenna, which is arranged in a dielectric tube and is therefore also referred to as an inner conductor of a coaxial conductor arrangement.
  • the outer conductor is then formed by the generated plasma on the dielectric tube.
  • This coaxial conductor arrangement is surrounded by a wall and thereby forms the actual plasma source.
  • the wall of the plasma source in this case has on one side an opening through which the plasma exits from the plasma source and in the vicinity of which a substrate to be treated is arranged outside the plasma source.
  • the plasma source extends along the axis of the rod-shaped microwave antenna with a defined length, wherein the opening has a much smaller width compared to the length of the plasma source, so that it is referred to as a linear plasma source.
  • Such plasma sources are described, for example, in DE 198 12 558 B4.
  • Plasma treatments which are carried out with the aid of the plasma generated, are above all layer-separating processes such as CVD (chemical vapor deposition) or layer-removing processes, such as plasma etching.
  • CVD chemical vapor deposition
  • layer-removing processes such as plasma etching.
  • a first gas containing a chemically active ingredient of the process carried out is introduced near a substrate surface of the substrate to be treated into the plasma source, while a second gas containing no or only a negligible chemically active ingredient of the performed process, is introduced into the plasma source near the microwave antenna.
  • the space within the plasma source is subdivided into two regions: a plasma generation region in which a plasma is generated from the second gas and which is near and Extends substantially radially symmetrically to the microwave antenna, and in a plasma treatment zone in which the plasma generated in the plasma generation region excites the first gas so far that the desired treatment of the substrate surface takes place.
  • the plasma treatment zone is located substantially near the substrate surface and may extend beyond the actual space of the plasma source. Both areas can also partially overlap, but a substantial spatial separation is advantageous.
  • the overlap area, or an area, that defines the plasma generation area and the Connecting plasma treatment zone with each other, is referred to as the connection zone.
  • Such a plasma treatment device is described, for example, in EP 3 309 815 A1.
  • the first gas and / or the second gas may also be gas mixtures of different gases.
  • the layer deposition on the dielectric tube and / or the wall is often asymmetric, because due to the diffusion direction more components of the second gas reach the substrate facing side of the dielectric tube and the wall of the plasma source than the side facing away from the substrate of the dielectric tube and the wall.
  • the service life of the plasma source is severely limited, i. the plasma source needs to be cleaned frequently. This leads to loss of productivity and, since the plasma source for cleaning often has to be removed from the plasma treatment apparatus, to an increased effort in disassembly and assembly of the plasma source, for example.
  • Similar effects can also coating removal components of the second gas.
  • the object is achieved by a plasma treatment apparatus according to claim 1.
  • Preferred embodiments can be found in the subclaims.
  • the plasma treatment device according to the invention for the plasma treatment of a substrate surface of a substrate has a linear microwave plasma source.
  • the plasma source includes a microwave antenna surrounded by a dielectric tube, a wall having an opening and at least two gas inlets, wherein the opening is arranged on the side of the plasma source facing the substrate surface.
  • the wall represents the outer envelope of the plasma source or the space of the plasma source, wherein the at least two gas inlets penetrate the wall and are suitable for introducing gas into the interior of the plasma source, ie the space of the plasma source.
  • a first gas inlet is arranged in the vicinity of the opening, while a second gas inlet of the at least two gas inlets is arranged on a side of the plasma source opposite the opening.
  • a plurality of first and / or a plurality of second gas inlets may be present, wherein the arrangement of the gas inlets is in each case as described above.
  • the space of the plasma source is divided into a plasma generation area and a plasma treatment area, wherein the plasma generation area and the plasma treatment area are interconnected by a connection zone.
  • a first gas is introduced into the plasma processing zone by means of the first gas inlet, the first gas containing components which are in an excited state suitable for layer deposition or stratification on the substrate surface while using second gas inlet, a second gas is introduced into the plasma generation region, which is mainly suitable for generating a plasma by means of a voltage applied to the microwave antenna voltage having a frequency in the microwave range, but contains no or only negligible components in an excited state to a layer deposition or a layer removal on or from the dielectric tube or the wall of the plasma source are suitable.
  • the plasma source according to the invention comprises a gas guiding device comprising two parts, the two parts of the gas guiding device being mirror-symmetrical from opposite sides of the wall of the plasma source with respect to a plane which is along the axis of the microwave antenna and perpendicular to a plane of the opening of the wall extends into the space of the plasma source and extend at least over a portion of the extent of the plasma source in the direction along the axis of the microwave antenna.
  • the gas-conducting device is an additional element of the plasma source, which, although connected to the wall of the plasma source and attached to it, is not realized by the wall itself.
  • the two parts of the gas guiding device reduce the width of the connection zone in this part of the extent of the plasma source with respect to a Plasma source without gas guide.
  • the plasma propagation itself and thus the transport of charge carriers in the direction of the plasma treatment zone can be influenced.
  • the gas conduction device can also be used to adapt the transport of gas particles between the plasma generation region and the plasma treatment zone.
  • a layer deposition or a layer-removing attack of the first gas on the dielectric tube and the wall of the plasma source in the region of the plasma generation region is greatly reduced or completely prevented.
  • the plasma treatment zone is reduced in width as measured transverse to the axis of the microwave antenna, whereby a smaller amount of the excited first gas reaches the plasma source wall in the plasma treatment zone and the wall in that region is less liable to become coated or stratified Attack is subject.
  • the service life of the plasma source is increased and the controllability of the plasma treatment and the quality of the layer deposition or layer removal improved.
  • the gas-conducting device may consist of an electrically conductive or electrically insulating material or of a plurality of different materials, which may be present above or next to one another.
  • Preferred materials are stainless steel, aluminum and titanium sheet.
  • ceramics such as aluminum oxide, zirconium oxide, etc. or various glasses or glass ceramics or even quartz glass.
  • carrier materials are used which are coated with different functional layers.
  • the gas guiding device is made of the same material and with the same thickness as the wall of the plasma source.
  • the plasma source may have different shapes in a cross section through the plasma source transverse to the axis of the microwave antenna.
  • the plasma source may be trapezoidal, with an upper side of the wall opposite the opening of the plasma source parallel to the plane of the opening and the plasma source wall having flat side surfaces between the upper side and the opening.
  • Other embodiments of the plasma source are bell-shaped with a partially circular wall formed, wherein the rounding of the wall on the opening of the plasma source opposite side of the wall is arranged and a semicircular arc or another portion of a circular arc maps or oval, elliptical or otherwise round, ie not angular, runs.
  • the plasma processing apparatus may be a continuous type apparatus in which a substrate is continuously and linearly and unidirectionally, i. along a line from an entrance to an exit, through a plasma treatment chamber and past the opening of the plasma source, or a closed device, in which a substrate is introduced into a plasma treatment chamber, treated stationary or quasi-stationary therein and then discharged again.
  • quasi-stationary is meant a movement of the substrate with respect to the plasma source, but the substrate is not moved continuously and linearly and unidirectionally from an input to an output of the plasma processing chamber. This quasi-stationary movement can be rotating, linear, oscillating or different or a combination of different movements.
  • the two parts of the gas guiding device each have a first region which extends in a plane parallel to the plane of the opening of the wall, wherein a first end of the first region adjoins the wall of the plasma source.
  • the two parts of the Gasleitvoriques each have a second region extending from a second end of the first region of straight at an angle greater than or equal to 90 ° and less than 180 ° in the direction of the plane of the opening of the wall extends, wherein the second end of the first region opposite to the first end of the first region.
  • the two parts of the gas guiding device each have a second region which extends from a second end of the first region of a circular arc in the direction of the plane of the opening of the wall, wherein the second end of the first region of the first end of the first region and wherein the radius of the circular arc of the second region is greater than the radius of the dielectric tube.
  • the wall of the plasma source in a region extending from a plane which is parallel to the plane of the opening of the wall through the axis of the microwave antenna, in the direction of the Opening opposite side of the plasma source formed as a hollow half-cylinder, wherein the radius of the half-cylinder is greater than the radius of the arc of the second region of the gas guide.
  • the two parts of the Gasleitvoriques each have a third region extending from the second end of the first region of straight at an angle greater than or equal to 90 ° and less than 180 ° in the direction of the opening opposite side of the plasma source extends.
  • the two parts of the Gasleitvoriques each have a third region which extends from the second end of the first region of a circular arc in the direction of the opening opposite side of the plasma source, wherein the radius of the arc of the second region is greater than the radius of the dielectric tube.
  • the radius of the circular arc of the third region is preferably equal to the radius of the circular arc of the second region.
  • the distance between two first ends of the third regions is preferably greater than 0, but smaller than the distance between two first ends of the second regions of the two parts of the gas-conducting device.
  • the first ends of the second regions and the first ends of the third regions in each case the ends, which are opposite to a second end of the respective region which adjoins the first region.
  • the plane in which the first regions extend preferably passes through the axis of the microwave antenna.
  • the plane in which the first regions extend is arranged between the axis of the microwave antenna and the plane of the opening of the wall.
  • the two parts of the gas guiding device each have a first region, which differs from the Wall of straight line extends at an angle greater than 0 and less than 90 ° with respect to the plane of the opening of the wall in the direction of the plane of the opening of the wall.
  • the wall of the plasma source in a region extending from a plane parallel to the plane of the opening of the wall through the axis of the microwave antenna in the direction of the opposite side of the plasma source, as hollow Half cylinder formed and the two parts of the gas guide device each have a first region which extends in a circular arc from the wall of the plasma source in the direction of the substrate surface.
  • the radius of the half-cylinder is equal to the radii of the circular arcs of the first regions of the gas guiding device and the centers of the half-cylinder and the arcs of the first regions coincide with the axis of the microwave antenna.
  • the two parts of the gas guide device may again have second portions extending from a second end of the first portion similar to that described with respect to the first embodiment.
  • the second end of the first region is again opposite a first end of the first region which adjoins the wall.
  • connection points of the gas directing device to the wall of the plasma source i. the first ends of the first regions farther from the plane of the opening of the wall than the first gas inlet.
  • the gas-conducting device is preferably arranged movably on the wall of the plasma source.
  • the gas guiding device can advantageously be changed in its orientation with respect to the plane of the opening of the wall or be folded away to remove the wall of the plasma source.
  • the plasma source comprises a plurality of gas guiding devices, each of the gas guiding devices being arranged in a partial area of the extent of the plasma source in the direction along the axis of the microwave antenna, which is different from other partial areas in which another of the gas guiding devices is arranged.
  • different gas guiding devices can be arranged, each of which is adapted in its design to the peculiarities of the respective subarea.
  • FIG. 1 shows a plasma treatment device according to the invention with a first embodiment of a first embodiment of the gas guiding device and a first form of the plasma source
  • FIG. 2 shows a plasma treatment device according to the invention with the first embodiment of the first embodiment of the gas guiding device and a second form of the plasma source
  • FIG 3 shows a plasma treatment device according to the invention with a second embodiment of the first embodiment of the gas guiding device and the first form of the plasma source
  • FIG. 4 shows a plasma treatment device according to the invention with a third embodiment of the first embodiment of the gas guiding device and the first form of the plasma source,
  • FIG. 5 shows a plasma treatment device according to the invention with the third embodiment of the first embodiment of the gas guiding device and the second form of the
  • FIG. 6 shows a plasma treatment device according to the invention with a fourth embodiment of the first embodiment of the gas guiding device and the first form of the
  • FIG. 7 shows a plasma treatment device according to the invention with a fifth embodiment of the first embodiment of the gas guiding device and the first form of the
  • FIG. 8 shows a plasma treatment device according to the invention with a sixth embodiment of the first embodiment of the gas guiding device and the first form of the plasma source,
  • FIG. 9 shows a plasma treatment device according to the invention with a seventh embodiment of the first embodiment of the gas guiding device and the first form of the
  • FIG. 10 shows a plasma treatment device according to the invention with a second
  • FIG. 11 shows a plasma treatment device according to the invention with your third one
  • Embodiment of the gas guiding device and the second form of the plasma source are shown transversely to the axis of a microwave antenna.
  • FIG. 1 shows a plasma treatment apparatus 1 according to the invention which contains a plasma treatment chamber 10 with a wall 11.
  • the plasma treatment apparatus 1 is a continuous device in which the substrate or substrates 21 are moved through the plasma treatment chamber 10 linearly from a first opening 12 in the wall 1 1 to a second opening 13 in the wall 1 1, wherein the second opening 13th the first opening 12 is opposite.
  • the substrates 21 are usually arranged on a substrate carrier 2, which moves in the example shown along the x-axis.
  • the plasma treatment device 1 further comprises one or more gas exhaust ports 14, at which, for example, one or more vacuum pumps and pressure regulating devices are provided, with which within the plasma treatment chamber 10 an atmosphere defined at least in terms of pressure can be generated.
  • the plasma treatment apparatus 1 has a microwave plasma source 3, hereinafter referred to as plasma source 3.
  • the plasma source 3 has a wall 30 with an opening 31, which is opposite to the substrate surface 22.
  • the distance HO between the plane of the substrate surface 22 and the plane of the opening 31 is, for example, 5 mm to 50 mm.
  • the width SO of the opening 31 is, for example, 120 mm to 180 mm.
  • a linear microwave antenna 32 is arranged, which has a circular shape in the illustrated cross-section and extends rod-shaped along the y-axis.
  • the microwave antenna 32 is surrounded by a dielectric tube 33, which has an annular cross-section and also extends along the y-axis.
  • the distance H between the axis of the microwave antenna 32 and the opening 31 of the wall 30 is typically in the range of 60 mm to 100 mm.
  • magnetic devices 34 are arranged, which generate a magnetic field within the plasma source 3 and can be moved along the wall 30.
  • first gas inlets 35a and 35b are arranged, through which, with the aid of gas lines, a first gas which has, at least in the excited state, layer-forming or layer-removing constituents is admitted into the plasma source 3 and in adjacent areas of the plasma processing chamber 10.
  • a first gas inlet can be unilaterally at the opening 31 to be ordered.
  • a gas pumping device is then arranged in the wall 30 of the plasma source 3 or in the wall 11 of the plasma chamber 10 on the side of the opening 31 opposite the first gas inlet.
  • a second gas inlet 36 is arranged, through which a second gas is introduced into the plasma source 3.
  • the second gas is introduced far from the substrate surface 22 to be processed, the microwave antenna 32 and the dielectric tube 33 being arranged between the second gas inlet 22 and the opening 31.
  • a plurality of second gas inlets 36 may be arranged within the plasma source 3. From the second gas, a plasma is generated in a plasma generation region 37 in the operating state of the microwave antenna 32, which excites the first gas in a plasma treatment zone 38 to such an extent that the desired treatment of the substrate surface 22 takes place.
  • the plasma generation region 37 and the plasma treatment zone 38 are interconnected by a connection zone 39 in which plasma particles are present, but where plasma is hardly regenerated and in which there is a reduced amount of the first gas compared to the plasma treatment zone 38.
  • the plasma source 3 further includes a gas guiding device 40 comprising two parts 40a and 40b, each opposite to opposite sides of the wall with respect to a plane passing through the axis of the microwave antenna 32 and perpendicular to a plane of the opening 31 of the wall 30 30 are fixed and from there into the interior of the plasma source 3 and at least over part of the plasma source 3 in the direction along the axis of the microwave antenna 32, ie in the y-direction, extend.
  • the parts 40a and 40b of the gas guiding device are each formed by a first region 41 which extends in a plane parallel to the plane of the opening 31, which in the illustrated case extends parallel to the substrate surface 22.
  • the first region 41 is in each case at a first end 41 1 of the first region 41 with the wall
  • the plane in which the opening of the gas guiding device 40 is arranged to the opening 31 and which coincides in the illustrated embodiment with the plane in which the first regions 41 are arranged, between the axis of the microwave antenna 32 and the plane of the opening The distance H1 and the width S influence the plasma expansion within the plasma source 3 and the gas flow of the second gas from the second gas inlet 36 in the direction of the substrate surface 22.
  • Gasleitvoriques 40 it comes to a Increasing the flow rate of the second gas in the direction of the substrate surface 22, whereby the gas transport of the first gas toward the dielectric tube 33 is reduced.
  • the concrete dimensioning of the distance H1 and the width S strongly depend on the required technology conditions.
  • second gases from the second gas inlet 36 at high gas flows produce greater pressure differences and higher gas particle velocities in the region of the gas guide device 40 than at lower gas flows.
  • the dimensions of all mentioned in the present application sizes of the gas-conducting device 40 is therefore obtained mainly from model calculations and simulations using powerful software.
  • Typical values for the width S are in the range of 30 mm to 50 mm, while typical values for the distance H 1 are in the range of 0 mm to 50 mm. In this case, these values are adapted to the diameter of the dielectric tube 33 or the distance H between the axis of the microwave antenna 32 and the opening 31.
  • the width S and / or the distance H1 can vary.
  • the width S may also be 0 (zero), so that the opening of the gas guiding device 40 to the opening 31 over the entire extent of the plasma source 3 along the axis of the microwave antenna 32 by a plurality of delimited from each other Openings is formed.
  • the plasma source 3 has a trapezoidal cross-section in which the upper side of the wall 30 opposite the opening 31 is parallel to the plane of the opening 31 and the lateral parts of the wall 30 are at an obtuse angle from the upper side Direction of the plane of the opening 31 are rectilinear. This form of the plasma source 3 is referred to below as the first form of the plasma source 3.
  • FIG. 2 shows a second form of the plasma source 3.
  • the second form of the plasma source 3 is defined by a circular shape of the plasma source 3 in the region above the axis of the microwave antenna 32, i. in the positive z-direction or in the opening 31 opposite region of the plasma source.
  • the wall 30 is formed in this area as a hollow half cylinder with a radius R. Below the axis of the microwave antenna 32, the wall 30 again runs straight and at an acute angle to the plane of the opening 31.
  • the radius R is chosen so that in the operating state of the microwave antenna 32, i. when the microwave power is applied, as far as possible a large proportion of the microwave power is reflected back into the plasma generation area in phase.
  • the radius R depends on the wavelength of the microwave frequency used and the dimensions of the microwave antenna 32 and the dielectric tube 33, i. from the diameter Di of the microwave antenna 32 and the diameter Da of the dielectric tube 33.
  • the gas guiding device 40 is formed similar to that of FIG.
  • the magnetic devices 34 are also arranged displaceably on the wall 30 and can be freely positioned along the wall 30. As in all embodiments and embodiments of the plasma source 3, the magnetic devices 34 may be made attractive or repellent to each other.
  • FIG. 3 shows a plasma source 3 with a second embodiment of the first embodiment of the gas-conducting device 40, wherein the plasma source 3 again has the first shape.
  • the gas-conducting device 40 has a second area 42 in each of its two parts 40a and 40b, in each case adjacent to the first area 41. This is just trained and extends from the second end 412 of the first region 41 from straight at an angle a in the direction of the plane of the opening 31 of the wall 30. In this case, the angle a between the the opening 31 facing lower side of the first region 41 and the second region 42 measured.
  • the angle a is greater than or equal to 90 ° and smaller than 180 °, with concrete values, as already stated above with respect to the width S and the distance H 1, again depend on many factors and are preferably determined by means of a simulation.
  • the first regions 41 are arranged in a plane which has a distance H2 to the axis of the microwave antenna 32 and runs parallel to the plane of the opening 31.
  • the two second ends 412 of the first regions 41 are spaced apart by a distance S1 that is greater than the width S of the opening of the gas guiding device 40.
  • the width S corresponds to the distance from first ends 421 of the second regions 42, wherein the first ends 421 are opposite to second ends of the second regions 42, which adjoin the first ends 412 of the first regions 41.
  • the opening of the gas guide 40 is again in a plane with the distance H1 from the axis of the microwave antenna 32, as already described with reference to FIG.
  • the second regions 42 thus form, together with the dielectric tube 33, a flow channel, in particular for the first gas.
  • FIG. 4 shows a plasma source 3 with a third embodiment of the first embodiment of the gas guiding device 40 and the first form of the plasma source 3.
  • the second region 42 of the gas guiding device 40 respectively circular arc or formed in the form of a portion of a hollow cylinder.
  • the circular arc-shaped second regions 42 thus form segments of the circumference of a hollow cylinder with the radius R1, wherein the radius R1 is greater than the radius of the dielectric tube 33 and, for example, in the range of 16 mm to 20 mm.
  • the specific value for R1 is highly dependent on the gas pressure and microwave power conditions and must be selected accordingly.
  • FIG. 1 shows a plasma source 3 with a third embodiment of the first embodiment of the gas guiding device 40 and the first form of the plasma source 3.
  • the second region 42 of the gas guiding device 40 respectively circular arc or formed in the form of a portion of a hollow cylinder.
  • the circular arc-shaped second regions 42 thus form segments of the circumference of a hollow cylinder with the radius R1, where
  • the first regions 41 are arranged in a plane which runs through the axis of the microwave antenna 32.
  • the circular arc-shaped configuration of the second regions 42 is particularly advantageous for a good flow around the dielectric tube 33 by the second gas, whereby the dielectric tube 33 is particularly well protected from a coating or a coating-removing treatment by the first gas.
  • the flow resistance of the gases in the plasma source 3 can be adjusted via the radius R1 and the width S of the opening of the gas-conducting device 40.
  • FIG. 5 shows that the third embodiment of the gas-conducting device 40 explained with reference to FIG. 4 can also be formed in a plasma source 3 with the second shape.
  • the radius R1 is smaller than the radius R of the half cylinder of the wall 30, but relatively independently of the radius R selectable.
  • the fourth embodiment of the gas guiding device 40 shown in FIG. 6 differs from the third embodiment explained with reference to FIG. 4 in that the plane in which the first regions 41 are arranged is opposite the plane which runs through the axis of the microwave antenna 32 , is displaced in the direction of the opening 31 of the wall 30 and now has a distance H2 to the axis of the microwave antenna 32.
  • the center of the circular arc-shaped second regions 42 continues to lie in the same plane as the first regions 41 and is therefore also displaced from the axis of the microwave antenna 32 by the distance H2.
  • FIG. 7 shows a plasma source 3 with a fifth embodiment of the first embodiment of the gas guiding device 40 and the first form of the plasma source 3.
  • the parts of the gas guiding device 40 now each have third regions 43.
  • the third region 43 extends from the second end 412 of the first region 41 in each case in a direction towards the upper side of the wall 30, which is opposite to the opening 31.
  • the third area 43 is arranged at an angle ⁇ to an upper side of the first area 41, which faces away from the opening 31, and is designed to be planar.
  • the angle ⁇ is greater than or equal to 90 ° and less than 180 °, with specific values, as already indicated with respect to other dimensions of the gas-conducting device 40, again depending on many factors and preferably determined by means of a simulation.
  • the first regions 41 are arranged in a plane which runs through the axis of the microwave antenna 32 and parallel to the plane of the opening 31, but may be arranged in other configurations but also in another plane parallel thereto.
  • the two first ends 431 of the third regions 43 are spaced apart by a distance S2 which is smaller than the width S of the opening of the gas guiding device 40, but in other embodiments may be equal to or greater than the width S.
  • the first ends 431 are opposite to second ends of the third regions 43, which adjoin the first ends 412 of the first regions 41.
  • the first ends 431 lie in a plane at the distance H3 from the axis of the microwave antenna 32, this plane being spaced from the upper side of the wall 30.
  • the third areas can also reach up to the upper side of the wall 30, as long as the second gas still through the second gas passage in a Space between the third regions and the dielectric tube can be embedded.
  • FIG. 8 shows a plasma source 3 with a sixth embodiment of the first embodiment of the gas-conducting device 40 and the first form of the plasma source 3.
  • the sixth embodiment differs from the fifth embodiment in that the second and third regions 42 and 43 are each formed as circular-arc-shaped regions like this for the second areas
  • the third regions 43 are subregions of the same hollow cylinder as the second regions 42.
  • the center of the arcuate second and third regions 42 and 43 coincides with the axis of the microwave antenna 32.
  • the first areas 41 are arranged in a plane passing through the axis of the microwave antenna 32 and parallel to the plane of the opening 31.
  • the two first ends 431 of the third regions 43 are spaced apart by a distance S2 which is smaller than the width S of the opening of the gas guiding device 40, but in other embodiments may be equal to or greater than the width S. In this embodiment, besides the distance S2 between the first ends 431 of the third regions
  • FIG. 9 shows a plasma source 3 with a seventh embodiment of the first embodiment of the gas-conducting device 40 and the first form of the plasma source 3.
  • the seventh embodiment differs from the fifth embodiment, illustrated in FIG. 7, in that the two third regions 43 extend through a connection region 44 which extends parallel to the upper side of the wall 30, are interconnected.
  • the connection region 44 thus adjoins the first ends 431 of the third regions 431.
  • the second gas inlet 36 which penetrates the connection region 44 and is connected to a gas line, is arranged within the connection region 44.
  • the second gas in the plasma generation region becomes within the space occupied by the second regions 42, the third regions 43 and the second region Connecting region 44 and the dielectric tube 33 is formed, particularly well utilized for plasma generation.
  • the sixth embodiment shown in Fig. 8 may be formed, wherein the first ends of the third regions are then also connected to each other by a flat or curved connection region or wherein the distance S2 between the first ends of the third regions is 0 (zero ).
  • embodiments of the gas-conducting device can also be formed, in which circular-arc-shaped second regions with flat third regions and optionally a connecting region or even second regions with circular third regions are combined. Also, an embodiment of further regions, which adjoin the first ends of the second or third regions, are circular-arc-shaped or planar and thus enable a further defined design of the flow path of the second gas, are possible.
  • FIG. 10 shows a plasma source 3 with a second embodiment of the gas guiding device 40, in which plane rectilinear first regions 41 'extend in a plane towards the plane of the opening 31, the plane of the first regions 4T not being parallel to the plane of FIG Opening 31 of the wall 30, but at an acute angle g to the plane of the opening 31 extends.
  • Concrete values of the angle g again depend on many factors and are preferably determined by means of a simulation.
  • the first regions 41 ' are gas-tightly adjacent to the wall 30 with first ends 41 1, while the second end 412 of the first regions 41', which are opposite the first ends 41 1, are located in a plane at a distance H 1 from the axis of the microwave antenna 32 ,
  • the second ends 412 thereby form the opening of the gas guiding device 40 to the opening 31, wherein the distance of the second ends 412 from one another represents the width S of the opening of the gas guiding device 40.
  • the first ends 41 1 are located approximately the same, parallel to the opening 31 plane as the axis of the microwave antenna 32 may be arranged in other embodiments but also in another plane.
  • the second embodiment of the gas guiding device 40 can be used both for the first and for the second form of the plasma source 3.
  • FIG. 11 shows a plasma source 3 with a third embodiment of the gas-conducting device 40, in which arc-shaped first regions 41 "extend in the direction of the plane of the opening 31.
  • the radius of the first regions 41 is equal to the radius R.
  • the first regions 41 "and the upper region of the wall 30 form an almost complete hollow cylinder whose center coincides with the axis of the microwave antenna 32.
  • the hollow cylinder has an opening with the width S.
  • a lower portion 30a of the wall 30 is arranged, which extends from the plane of the axis of the microwave antenna 32 to the opening 31 of the wall 30 as a planar region at an acute angle to the plane of the opening 31 of the wall 30.
  • the first gas inlets 35a and 35b are arranged in the lower portion 30a.
  • the first regions 41 "are gas-tightly adjacent to the wall 30 with first ends 41 1, while second ends 412 of the first regions 41" facing the first ends 41 1 lie in a plane with a distance H 1 to the axis of the microwave antenna 32 are located.
  • the second ends 412 thereby form the opening of the gas guiding device 40 to the opening 31, wherein the distance of the second ends 412 from one another represents the width S of the opening of the gas guiding device 40.
  • gas guiding device 40 in the second or third embodiment may have, in addition to the first regions 4T and 41 ", second regions 42, as explained with reference to FIGS. 3 to 9.
  • the values given for distances and widths of openings are similar for all configurations (as far as they are occurrences) and can be selected according to the specific requirements of the plasma treatment, for example with the aid of simulations.
  • the opening of the gas-conducting device 40 having the width S is in each case arranged above the plane of the opening 31 of the wall 30 of the plasma source 3, i. between the plane of the opening 31 and the axis of the microwave antenna 32.
  • the first ones are Areas 41, 4T or 41 "movably attached to the wall 30.
  • they can be folded away before the removal of the wall 30 towards the wall, preferably downwards, ie in the direction of the substrate surface 22, whereby the width S of the Opening the gas guide 40 is increased.
  • second or third areas 42 and 43 may be movably attached to the respective first area 41, 41 ', 41 "to facilitate removal of the wall 30 or the width S of the opening of the gas guide 40 or the distance S2 between the first ends 431 of the third regions 43 to change.
  • the width S or the distance S2 By changing the width S or the distance S2, the flow conditions of the gases in the plasma source 3 can be adjusted and adapted to possible changes in the plasma process.
  • the plasma source 3 is mirror-symmetrical to the plane passing through the axis of the microwave antenna 32 and perpendicular to the plane of the opening 31 of the wall 30, as shown in the figures.
  • individual components of the plasma source may also be arranged asymmetrically or may be present only in one of the parts of the plasma source defined by said plane.
  • Components of said options for the design of the gas-conducting device 40 can also be combined with one another, as long as they do not exclude each other.
  • the presented gas guide device 40 can be used in various types of plasma treatment apparatus and for various forms of plasma source 3 and is not limited to the cases illustrated here.

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Abstract

L'invention concerne un dispositif de traitement au plasma conçu pour traiter au plasma une surface d'un substrat, comprenant une source de plasma à micro-ondes linéaire. Cette source de plasma comporte une antenne à micro-ondes entourée d'un tube diélectrique, une paroi pourvue d'une ouverture et au moins deux admissions de gaz. L'espace de la source de plasma est divisé en une zone de génération de plasma et une zone de traitement au plasma, la zone de génération de plasma et la zone de traitement étant reliées l'une à l'autre par l'intermédiaire d'une zone de liaison. La source de plasma comprend en outre un dispositif de conduite de gaz qui comporte deux parties. Les deux parties de ce dispositif de conduite de gaz s'étendent dans l'espace de la source de plasma, à partir de faces opposées de la paroi de la source de plasma, à symétrie spéculaire par rapport à un plan qui s'étend le long de l'axe de l'antenne à micro-ondes et perpendiculairement à un plan de l'ouverture et au moins sur une zone partielle de l'étendue de cette source de plasma le long de l'axe de l'antenne à micro-ondes, et réduisent la largeur de la zone de liaison dans ladite zone partielle de l'étendue de la source de plasma par rapport à une source de plasma exempte de dispositif de conduite de gaz.
PCT/EP2019/062043 2018-06-06 2019-05-10 Dispositif de traitement au plasma comprenant une source de plasma à micro-ondes linéaire et un dispositif de conduite de gaz WO2019233703A1 (fr)

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DE102018113443.6A DE102018113443A1 (de) 2018-06-06 2018-06-06 Plasmabehandlungsvorrichtung mit einer linearen Mikrowellen-Plasmaquelle und einer Gasleitvorrichtung
DE102018113443.6 2018-06-06

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1063678A2 (fr) * 1999-06-24 2000-12-27 Leybold Systems GmbH Dispositif de production d'un plasma excité par microondes dans une cavité
US20100078320A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microwave plasma containment shield shaping
DE19812558B4 (de) 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
US20120152169A1 (en) * 2010-12-15 2012-06-21 I-Nan Lin Plasma deposition device
EP3309815A1 (fr) 2016-10-12 2018-04-18 Meyer Burger (Germany) AG Dispositif de traitement au plasma comprenant deux sources de plasma excitées par micro-ondes couplées ensemble et procédé de fonctionnement d'un tel dispositif de traitement au plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478283B1 (fr) * 1990-09-26 1996-12-27 Hitachi, Ltd. Méthode et appareil de traitement par plasma microondes
DE102006009160B4 (de) * 2006-02-22 2010-01-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung für die Separation von Partikeln aus einem Plasma
DE102012103425A1 (de) * 2012-04-19 2013-10-24 Roth & Rau Ag Mikrowellenplasmaerzeugungsvorrichtung und Verfahren zu deren Betrieb

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19812558B4 (de) 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
EP1063678A2 (fr) * 1999-06-24 2000-12-27 Leybold Systems GmbH Dispositif de production d'un plasma excité par microondes dans une cavité
US20100078320A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microwave plasma containment shield shaping
US20120152169A1 (en) * 2010-12-15 2012-06-21 I-Nan Lin Plasma deposition device
EP3309815A1 (fr) 2016-10-12 2018-04-18 Meyer Burger (Germany) AG Dispositif de traitement au plasma comprenant deux sources de plasma excitées par micro-ondes couplées ensemble et procédé de fonctionnement d'un tel dispositif de traitement au plasma

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