EP3011807B1 - Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence - Google Patents

Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence Download PDF

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Publication number
EP3011807B1
EP3011807B1 EP14744363.4A EP14744363A EP3011807B1 EP 3011807 B1 EP3011807 B1 EP 3011807B1 EP 14744363 A EP14744363 A EP 14744363A EP 3011807 B1 EP3011807 B1 EP 3011807B1
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EP
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Prior art keywords
electromagnetic waves
plasma
plasma chamber
waveguide
dielectric
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Application number
EP14744363.4A
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German (de)
English (en)
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EP3011807A1 (fr
Inventor
Stephan Schneider
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Eeplasma GmbH
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Eeplasma GmbH
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

Definitions

  • the present invention relates to a device for the treatment of process gases in a plasma excited by in particular high-frequency electromagnetic waves comprising a plasma chamber, a generator for generating the electromagnetic waves and a waveguide arrangement for supplying the electromagnetic waves in the plasma chamber. Furthermore, the invention relates to a method for the treatment of process gases in a plasma, are generated in the electromagnetic waves and fed to a plasma chamber.
  • Plasma devices have been known in the art for decades and are used as external plasma sources for isotropically etching different layers on semiconductor substrates and removing damaged silicon layers on the back side of the semiconductor substrate after mechanical thin grinding of the silicon substrates. Furthermore, external plasma sources are used for cleaning process chambers for coating processes of so-called chemical vapor deposition processes with and without plasma assistance. Further, they are used for conditioning surfaces of plastics and other materials by excited oxygen, nitrogen or hydrogen. Another field of application is the decomposition of grossly polluting greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc., which are used in the course of the production of integrated circuits as process gases and are only partially consumed in the individual process steps.
  • greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc.
  • the document SU 397139 discloses a device having a vacuum chamber in which a plasma excited by electromagnetic waves can be formed, and a generator for generating the electromagnetic waves. On the inner wall of the vacuum chamber, a dielectric resonator is provided.
  • the document US 6,198,224 B1 discloses a device with a plasma chamber in which a dielectric container is located. The plasma chamber is surrounded by at least one waveguide resonator. In the arranged between the respective waveguide resonator and the plasma chamber wall slots are provided, can be coupled by the electromagnetic waves from the waveguide resonator in the plasma chamber.
  • the object of the invention is to provide a device and a method for the treatment of process gases in a plasma, which is suitable by its design features and method steps, even at higher powers of the electromagnetic waves to distribute the supplied energy as evenly as possible over the gas discharge chamber.
  • This object is achieved by a device for the treatment of process gases in a plasma excited by electromagnetic waves having the features of claim 1.
  • the device comprises a plasma chamber lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for feeding the electromagnetic waves into the plasma chamber, the waveguide arrangement having at least two feed points, each having an E-field waveguide branch, to feed the electromagnetic waves as continuous waves in the dielectric.
  • a multi-sided feeding of the electromagnetic waves is advantageous over a one-sided feed, as this can form a comparatively uniform plasma density over the entire circumference of the plasma chamber.
  • the dielectric, in particular a hollow cylinder, in particular a hollow ceramic cylinder, which covers the inner surfaces of a plasma chamber housing, is therefore uniformly thermally stressed. As a result, a large process window with regard to the parameters gas flow, process pressure and fed microwave power can be ensured.
  • the feed points are arranged distributed uniformly around the plasma chamber or the dielectric. With two feed sources, these are then preferably arranged on opposite sides of the plasma chamber. In the case of an even number of feed sources, two feed sources are preferably arranged on opposite sides of the plasma chamber. In principle, however, an odd number of supply sources is possible. An even distribution is also present when the feed sources are arranged substantially uniformly distributed around the plasma chamber.
  • the waveguide arrangement is designed such that superimpose constructively coherent from various, in particular all feed points fed electromagnetic waves, in particular in the center of the plasma chamber.
  • the device may be designed such that the electromagnetic waves fed by the feed points are generated by a single or common generator.
  • the waveguide arrangement may comprise at least one waveguide branch to supply the electromagnetic waves to multiple feed points, wherein the lengths of the respective sections of the waveguide array from the respective waveguide branch to the respective feed points are equal to or different from each other by a multiple of half the wavelength of the electromagnetic waves.
  • the respective feed point has an oscillator element which forms an oscillator together with the respective E-field waveguide branching.
  • the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement rests against the dielectric is completely covered by the dielectric.
  • a device for treating process gases in an electromagnetic wave excited plasma comprising a plasma chamber lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for feeding the electromagnetic waves into the plasma chamber the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement bears against the dielectric, is completely covered by the dielectric.
  • an ignition device for igniting a plasma is provided in the plasma chamber, wherein the ignition device comprises an ignition element with at least one elongated ignition section. With such an ignition device ignition of the plasma can be achieved even at low power of the injected electromagnetic wave.
  • the ignition device in particular the ignition element, be designed such that the longitudinal axis of the or at least one ignition section is oriented at an angle of at most 45 °, in particular at least substantially parallel to the propagation direction of the electromagnetic waves at least one feed point.
  • the invention relates to a method for the treatment of process gases in an electromagnetic wave excited plasma, in which generates the electromagnetic waves and lined with a dielectric Plasma chamber are supplied such that the electromagnetic waves are fed to at least two, each having an E-field waveguide junction having feed points as continuous waves in the dielectric.
  • Electromagnetic waves in particular microwaves, in particular with the customary and ex officio approved frequencies of 2.45 GHz, 5.8 GHz and 915 MHz, are used in the device and the method according to the invention.
  • the electromagnetic waves become corresponding Fig. 1 to 3 generated in a microwave generator 11 and passed by means of a waveguide 12 via a tuning device 13 to a plasma chamber housing 14, in which a ceramic cylinder 16 or a tube or a tube is inserted.
  • the electromagnetic waves are conducted directly to the plasma chamber housing 14 ( Fig.1 ) or at a particular first waveguide branch 15a split in pairs and - if desired - branched again at two other waveguide branches 15b and led to the plasma chamber housing 14 and then passed to the ceramic cylinder 16, where they through E-field waveguide branches 18 as running waves in the Ceramic can spread ( Fig. 2 and Fig. 3 ).
  • the boundaries of the electromagnetic waves in the ceramic form on the one hand the inner surfaces of the plasma chamber housing 14 made of metal and on the other hand, a layer of high electron concentration in the plasma, which forms near the inner surface of the ceramic cylinder 16.
  • a first device according to the invention and a method described which is predominantly applied under atmospheric pressure is preferred at a pressure in the range between 10 kPa and 1 MPa, wherein the electromagnetic wave in the present device is supplied from both sides of the plasma chamber 25.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • the coaxial outer conductor may be formed by the inner surface 29 of the plasma chamber housing 14, and the coaxial inner conductor by the frusto-conical plasma cloud 25.
  • a two-sided feed by means of constructive coherent waves 17 compared to a one-sided feeding of the microwave advantageous, since thereby already at the feed level a perfect coaxial TM mode 19 is formed, which stabilizes the plasma well over a very large process window in terms of gas flow and fed microwave power.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is clear from the Fig. 4 and 5 results, the inner cross section of the rectangular waveguide 12 is completely covered at the feed points of the ceramic cylinder 16.
  • an oscillator pin 28 is advantageous, in each case an oscillator is formed, which consists of an E-field waveguide branch 18 in the ceramic cylinder 16 and the adjacent oscillator pin 28 consists.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 into the ceramic cylinder 16.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining vote of the plasma devices in Fig.1 to Fig. 3 takes place via the tuning devices 13.
  • the process gas is introduced through in particular two gas inlets 21 tangentially to the ceramic cylinder 16 in the plasma chamber 25 in order to generate there a rotating flow in the direction of the gas outlet 24.
  • the plasma is ignited by an igniter 37, in detail 37a or 37b (FIG. FIGS. 8 and 9 ) ignited and spreads frusto-conical over the entire length of the ceramic cylinder 16 to a reactor cylinder 34, which consists of a refractory metal alloy.
  • a further device according to the invention and a method is described, which is mainly used in the low pressure range, preferably at a pressure in the range between 10 Pa and 1500 Pa, more preferably at a pressure in the range between 30 Pa and 300 Pa, wherein the electromagnetic wave in the present device is supplied from both sides of the plasma chamber 25, in which case the electric field of the shaft is perpendicular to the axis of the ceramic cylinder 16.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • an H-mode of the electromagnetic wave may be formed with a waveguide surface formed by the inner surface 29 of the plasma chamber housing 14 and the opposite surface by the high plasma density 35 near the ceramic surface in the plasma chamber 25.
  • a double-sided feed by means of constructive coherent waves 17 is advantageous over a one-sided feed of the microwave, as a uniform plasma density over the entire circumference of the ceramic cylinder 16 is formed, which has a uniform thermal load of the ceramic cylinder 16 result and thereby a very large Process window with regard to gas flow, process pressure and injected microwave power allowed.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is clear from the Fig. 6 and 7 results, the inner cross section of the rectangular waveguide 12 is completely covered at the feed points of the ceramic cylinder 16.
  • an oscillator pin 28 is advantageous, in each case an oscillator is formed, which consists of an E-field waveguide branch 18 in the ceramic cylinder 16 and the adjacent oscillator pin 28.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 into the ceramic cylinder 16.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining vote of the plasma devices in Fig.1 to Fig. 3 takes place via the tuning devices 13.
  • the process gas is admitted through two gas inlets 22 and 23, with the gas inlet 22 opening onto the rear side of the ceramic cylinder 16, and the gas inlet 23 opposite to the gas outlet 24.
  • the gas inlet 22 on the rear side of the ceramic cylinder 16 serves to better cool the ceramic cylinder 16 in the case the operation of the plasma device at very low pressure.
  • ceramic components 26 are additionally inserted, which seal the process gas from the environment by means of vacuum seals 36.
  • a gas inlet is provided which enters the plasma chamber in the area of the cylindrical surface of the ceramic cylinder.
  • Ignition devices 37 are shown, in particular for the device in Fig. 4 and Fig. 5 , which is mainly used for plasma at atmospheric pressure, wherein in Fig. 8 a rectangular plate 37 a with rounded edges is aligned in its longitudinal axis to the directions of incidence of the electromagnetic wave.
  • this plate 37a for example by means of a rod, raised in the plane of the rectangular waveguide 14, and there is a corresponding field strength in the center of the plate 37a, which is sufficient to ignite the plasma even at low power of the injected electromagnetic wave ,
  • the plate 37a may also be sharpened at its ends arrow-shaped or semi-circular shaped.
  • Fig. 9 Fig. 3 is a star-shaped plate 37b with 6 ends shown, whose ends are formed as well as the ends of the plate 37a.
  • the advantage of plate 37b over plate 37a is given by the fact that in each rotational position of the plate 37b, a reliable ignition of the plasma takes place.
  • the ignition device 37 may also have 5, 7, 8 and even more ends.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Claims (10)

  1. Dispositif de traitement de gaz de processus dans un plasma excité par des ondes électromagnétiques, comportant une chambre à plasma (25), un générateur (11) pour générer les ondes électromagnétiques et un agencement de guide d'ondes (12) pour amener les ondes électromagnétiques dans la chambre à plasma (25),
    caractérisé en ce que
    la chambre à plasma (6) est revêtue d'un diélectrique (16), l'agencement de guide d'ondes (12) comprenant au moins deux emplacements d'alimentation présentant chacun une ramification de guide d'ondes (18) en champ électrique et destinés à alimenter les ondes électromagnétiques à titre d'ondes continues dans le diélectrique (16).
  2. Dispositif selon la revendication 1,
    caractérisé en ce que
    les emplacements d'alimentation sont disposés en étant équi-répartis autour de la chambre à plasma (25), en particulier deux sources d'alimentation respectives sont disposées sur des côtés opposés de la chambre à plasma (25).
  3. Dispositif selon la revendication 1 ou 2,
    caractérisé en ce que
    l'agencement de guide d'ondes (12) est réalisé de telle sorte que des ondes électromagnétiques alimentées par différents emplacements d'alimentation se superposent de façon constructive et cohérente dans la chambre à plasma.
  4. Dispositif selon l'une des revendications précédentes,
    caractérisé en ce que
    l'agencement de guide d'ondes (12) comprend au moins une ramification de guide d'ondes (15a, 15b) pour amener les ondes électromagnétiques à plusieurs emplacements d'alimentation, et les longueurs des portions respectives de l'agencement de guide d'ondes (12) depuis la ramification de guide d'ondes (15a, 15b) respective jusqu'aux emplacements d'alimentation respectifs sont égales ou diffèrent l'une de l'autre d'un multiple de la demi-longueur des ondes électromagnétiques.
  5. Dispositif selon l'une au moins des revendications précédentes,
    caractérisé en ce que
    l'emplacement d'alimentation respectif comprend un élément oscillateur (28) qui, conjointement avec la ramification de guide d'ondes (18) en champ électrique, constitue un oscillateur.
  6. Dispositif selon l'une au moins des revendications précédentes,
    caractérisé en ce que
    le diélectrique (16) est réalisé sous forme de cylindre creux.
  7. Dispositif selon la revendication 6,
    caractérisé en ce que
    la section transversale intérieure de la portion respective de l'agencement de guide d'ondes (12) par laquelle l'agencement de guide d'ondes (12) prend appui contre le diélectrique (16) est complètement recouverte par le diélectrique (16).
  8. Dispositif selon l'une au moins des revendications précédentes,
    caractérisé en ce que
    il est prévu un moyen d'allumage (37) pour allumer le plasma dans la chambre à plasma (25), et le moyen d'allumage (37) comprend un élément d'allumage (37a, 37b) ayant au moins une portion d'allumage allongée.
  9. Dispositif selon la revendication 8,
    caractérisé en ce que
    le moyen d'allumage (37), en particulier l'élément d'allumage (37a, 37b), est réalisé de telle sorte que l'axe longitudinal de ladite portion ou d'au moins une portion d'allumage est orienté sous un angle de 45° au maximum, en particulier sensiblement parallèlement, par rapport à la direction de propagation des ondes électromagnétiques, à au moins un emplacement d'alimentation.
  10. Procédé de traitement de gaz de processus dans un plasma excité par des ondes électromagnétiques, dans lequel les ondes électromagnétiques sont générées et alimentées à une chambre à plasma revêtue d'un diélectrique de telle sorte que les ondes électromagnétiques sont alimentées sous forme d'ondes continues dans le diélectrique à au moins deux emplacements d'alimentation présentant chacun une ramification de guide d'ondes en champ électrique.
EP14744363.4A 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence Active EP3011807B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013215252.3A DE102013215252A1 (de) 2013-08-02 2013-08-02 Vorrichtung und Verfahren zur Behandlung von Prozessgasen in einem Plasma angeregt durch elektromagnetische Wellen hoher Frequenz
PCT/EP2014/066277 WO2015014839A1 (fr) 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence

Publications (2)

Publication Number Publication Date
EP3011807A1 EP3011807A1 (fr) 2016-04-27
EP3011807B1 true EP3011807B1 (fr) 2017-11-15

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Country Status (3)

Country Link
EP (1) EP3011807B1 (fr)
DE (1) DE102013215252A1 (fr)
WO (1) WO2015014839A1 (fr)

Cited By (1)

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CN114845455A (zh) * 2022-05-07 2022-08-02 季华实验室 微波等离子体化学气相沉积装置及系统

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015215858B4 (de) 2015-08-20 2019-01-24 Siltronic Ag Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102017125723A1 (de) 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls
EP4108647A1 (fr) 2021-06-21 2022-12-28 eeplasma GmbH Procédé de fabrication de particules à noyau et à enveloppe chargées en engrais liquide

Citations (1)

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Publication number Priority date Publication date Assignee Title
SU397139A1 (ru) * 1971-01-25 1975-03-05 Устройство дл возбуждени электромагнитных волн в плазме

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CN114845455A (zh) * 2022-05-07 2022-08-02 季华实验室 微波等离子体化学气相沉积装置及系统

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DE102013215252A1 (de) 2015-02-05
WO2015014839A1 (fr) 2015-02-05

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