EP3011807A1 - Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence - Google Patents

Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence

Info

Publication number
EP3011807A1
EP3011807A1 EP14744363.4A EP14744363A EP3011807A1 EP 3011807 A1 EP3011807 A1 EP 3011807A1 EP 14744363 A EP14744363 A EP 14744363A EP 3011807 A1 EP3011807 A1 EP 3011807A1
Authority
EP
European Patent Office
Prior art keywords
electromagnetic waves
plasma
waveguide
plasma chamber
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP14744363.4A
Other languages
German (de)
English (en)
Other versions
EP3011807B1 (fr
Inventor
Stephan Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eeplasma GmbH
Original Assignee
Eeplasma GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51228455&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP3011807(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Eeplasma GmbH filed Critical Eeplasma GmbH
Publication of EP3011807A1 publication Critical patent/EP3011807A1/fr
Application granted granted Critical
Publication of EP3011807B1 publication Critical patent/EP3011807B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides

Definitions

  • the present invention relates to a device for the treatment of process gases in a plasma excited by in particular high-frequency electromagnetic waves comprising a plasma chamber, a generator for generating the electromagnetic waves and a waveguide arrangement for Supply of electromagnetic waves into the plasma chamber. Furthermore, the invention relates to a method for the treatment of process gases in a plasma, are generated in the electromagnetic waves and fed to a plasma chamber.
  • Plasma devices have been known in the art for decades and are used as external plasma sources for isotropically etching different layers on semiconductor substrates and removing damaged silicon layers on the back side of the semiconductor substrate after mechanical thin grinding of the silicon substrates. Furthermore, external plasma sources are used for cleaning process chambers for coating processes of so-called chemical vapor deposition processes with and without plasma assistance. Further, they are used for conditioning surfaces of plastics and other materials by excited oxygen, nitrogen or hydrogen. Another field of application is the decomposition of grossly polluting greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc., which are used as process gases during the production of integrated circuits and are only partially consumed in the individual process steps.
  • greenhouse gases such as carbon tetrafluoride, sulfur hexafluoride and nitrogen trifluoride, etc.
  • the object of the invention is to provide a device and a method for the treatment of process gases in a plasma, which is suitable by its design features and method steps, even at higher powers of the electromagnetic waves to distribute the supplied energy as evenly as possible over the gas discharge chamber.
  • the device comprises a plasma chamber which is lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for supplying the electromagnetic waves into the plasma chamber, wherein the waveguide arrangement has at least two feed points, each having an E-field waveguide branch have to feed the electromagnetic waves as continuous waves in the dielectric.
  • a multi-sided feeding of the electromagnetic waves is advantageous over a one-sided feed, as this can form a comparatively uniform plasma density over the entire circumference of the plasma chamber.
  • the dielectric, in particular a hollow cylinder, in particular a hollow ceramic cylinder, which covers the inner surfaces of a plasma chamber housing, is therefore uniformly thermally stressed. As a result, a large process window with regard to the parameters gas flow, process pressure and fed microwave power can be ensured.
  • the abovementioned advantage is achieved to a particular extent if the feed points are arranged distributed uniformly around the plasma chamber or the dielectric. With two feed sources, these are then preferably arranged on opposite sides of the plasma chamber. In the case of an even number of feed sources, two feed sources are preferably arranged on opposite sides of the plasma chamber. In principle, however, an odd number of supply sources is possible. An even distribution is also present when the feed sources are arranged substantially uniformly distributed around the plasma chamber.
  • the waveguide arrangement is designed in such a way that it is structurally coherently superimposed by different electromagnetic waves fed in in particular to all feed points, in particular in the center of the plasma chamber.
  • the device may be designed such that the electromagnetic waves fed by the feed points are generated by a single or common generator.
  • the waveguide arrangement may have at least one waveguide branch in order to supply the electromagnetic waves to a plurality of feed points, the lengths of the respective sections of the waveguide arrangement being different from the respective waveguide branch to the respective feed points equal to or a multiple of half the wavelength of the electromagnetic waves ,
  • the respective feed point has an oscillator element which forms an oscillator together with the respective E-field waveguide branching.
  • the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement rests against the dielectric is completely covered by the dielectric. In this way, a complete supply of the energy of the electromagnetic waves to the dielectric can also be ensured.
  • This aspect is also claimed independently of the at least two feed points.
  • the invention therefore also relates to a device for treating process gases in an electromagnetic wave excited plasma, comprising a plasma chamber lined with a dielectric, a generator for generating the electromagnetic waves and a waveguide arrangement for feeding the electromagnetic waves into the plasma chamber the inner cross section of the respective section of the waveguide arrangement, with which the waveguide arrangement bears against the dielectric, is completely covered by the dielectric.
  • an ignition device for igniting a plasma is provided in the plasma chamber, wherein the ignition device comprises an ignition element with at least one elongated ignition section. With such an ignition device ignition of the plasma can be achieved even at low power levels of the supplied electromagnetic wave.
  • the ignition device in particular the ignition element, be designed such that the longitudinal axis of the or at least one ignition section is oriented at an angle of at most 45 °, in particular at least substantially parallel to the propagation direction of the electromagnetic waves at least one feed point.
  • the invention relates to a method for the treatment of process gases in a plasma excited by electromagnetic waves, in which generates the electromagnetic waves and one lined with a dielectric Plasma chamber are supplied such that the electromagnetic waves are fed to at least two, each having an E-field waveguide branching feed points as continuous waves in the dielectric. Further developments of the method according to the invention result in an analogous manner from the developments of the device according to the invention.
  • Electromagnetic waves in particular microwaves, in particular with the customary and ex officio approved frequencies of 2.45 GHz, 5.8 GHz and 915 MHz, are used in the device and the method according to the invention.
  • FIG. 1 is a schematic representation of a plasma apparatus
  • FIG. 2 is a schematic representation of a plasma apparatus according to the invention
  • Fig. 3 is a schematic representation of another invention
  • FIG. 4 shows an atmospheric pressure plasma device according to the invention in FIG.
  • FIG. 5 shows the atmospheric pressure plasma apparatus of FIG. 4 in longitudinal section
  • FIG. 6 shows a low-pressure plasma device according to the invention in cross-section
  • FIG. 7 shows the low-pressure plasma apparatus from FIG. 6 in longitudinal section, FIG.
  • FIG. 8 shows an ignition apparatus for the atmospheric pressure plasma apparatus of FIGS. 4, and
  • the electromagnetic waves are generated according to Fig. 1 to 3 in a microwave generator 1 1 and passed by a waveguide 12 via a tuning device 13 to a plasma chamber housing 14, in which a ceramic cylinder 1 6 or a tube or a tube is inserted.
  • the electromagnetic waves are conducted directly to the plasma chamber housing 14 (FIG. 1) or split in pairs at a particular first waveguide branch 15a and, if desired, branched again at two further waveguide branches 15b and guided to the plasma chamber housing 14 and then to the ceramic cylinder 1 6, where they can propagate through E-field waveguide branches 18 as traveling waves in the ceramic (FIGS. 2 and 3).
  • the boundaries of the electromagnetic waves in the ceramic form on the one hand the inner surfaces of the plasma chamber housing 14 made of metal and on the other hand a layer of high electron concentration in the plasma, which forms near the inner surface of the ceramic cylinder 1 6.
  • FIGS. 4 and 5 describe a first device according to the invention and a method which is predominantly used under atmospheric pressure, before at a pressure ranging between 10 kPa and 1 MPa, the electromagnetic wave in the present device being supplied to the plasma chamber 25 from both sides.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • a double-sided feed by means of constructive coherent waves 17 is advantageous over a one-sided feeding of the microwave, as this already forms a perfect coaxial TM mode 19 at the feed plane, the plasma over a very large process window well stabilized in terms of gas flow and fed microwave power.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is apparent from Figs. 4 and 5, the inner cross section of the rectangular waveguide 12 is completely covered at the feed points of the ceramic cylinder 1 6.
  • an oscillator pin 28 is advantageous, wherein in each case an oscillator is formed, which consists of an E-field Waveguide branch 18 in the ceramic cylinder 1 6 and the adjacent oscillator pin 28 consists.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 in the ceramic cylinder 1 6.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining tuning of the plasma devices in FIGS. 1 to 3 takes place via the tuning devices 13.
  • the process gas is introduced through in particular two gas inlets 21 tangentially to the ceramic cylinder 1 6 in the plasma chamber 25 to generate there a rotating flow toward the gas outlet 24.
  • the plasma is ignited by an igniter 37, in detail 37a or 37b (FIGS. 8 and 9), and extends in a frusto-conical shape over the entire length of the ceramic cylinder 16 to a reactor cylinder 34 which is made of a heat-resistant metal alloy. exists.
  • a further device according to the invention and a method is described, which is mainly used in the low-pressure region, preferably at a pressure in the range between 10 Pa and 1500 Pa, particularly preferably at a pressure in the range between 30 Pa and 300 Pa, wherein the electromagnetic wave is supplied in the present device from both sides of the plasma chamber 25, in which case the electric field of the shaft is perpendicular to the axis of the ceramic cylinder 1 6.
  • the electromagnetic wave can also be supplied only from one side of the plasma chamber 25 and the opposite opening for feeding the microwave is in this case closed or even not present at all.
  • an H-mode of the electromagnetic wave may be formed with a waveguide surface formed by the inner surface 29 of the plasma chamber housing 14 and the opposite surface by the high plasma density 35 near the ceramic surface in the plasma chamber 25.
  • a double-sided feed by means of constructive coherent shafts 17 is advantageous over a one-sided feed of the microwave, as a uniform plasma density is thereby formed over the entire circumference of the ceramic cylinder 16, which results in uniform thermal loading of the ceramic cylinder 16 This allows a very large process window in terms of gas flow, process pressure and fed microwave power.
  • the electric field of the electromagnetic wave is shown schematically by the vectors 27. As is apparent from Figs. 6 and 7, the inner cross section of the rectangular waveguide 12 at the feed points of the ceramic cylinder 1 6 is completely covered.
  • an oscillator pin 28 is advantageous, in each case an oscillator is formed, which consists of an E-field waveguide branch 18 in the ceramic cylinder 1 6 and the adjacent oscillator pin 28.
  • the position, the height and the cross section of the oscillator pin 28 are chosen so that the incoming wave is almost completely fed via the E-field waveguide branch 18 in the ceramic cylinder 1 6.
  • the cross section of the oscillator pin 28 can be round, elliptical or rectangular, but also have a different shape. A remaining tuning of the plasma devices in FIGS. 1 to 3 takes place via the tuning devices 13.
  • the process gas is introduced through two gas inlets 22 and 23, wherein the gas inlet 22 opens on the back of the ceramic cylinder 1 6, and the gas inlet 23 opposite the gas outlet 24.
  • the gas inlet 22 on the back of the ceramic cylinder 1 6 is used for better cooling of the ceramic cylinder first 6 in the case of the operation of the plasma device at very low pressure.
  • ceramic components 26 are additionally inserted for sealing the gas inlet 22, which seal the process gas from the environment by means of vacuum seals 36.
  • a gas inlet is provided which enters the plasma chamber in the area of the cylindrical surface of the ceramic cylinder.
  • Igniter devices 37 are shown in FIGS. 8 and 9, in particular for the device in FIGS. 4 and 5, which is predominantly used for plasma under atmospheric pressure, wherein in FIG. 8 a rectangular plate 37a with rounded edges in FIG its longitudinal axis is aligned with the directions of incidence of the electromagnetic wave. To ignite the plasma, this plate 37a, for example by means of a rod, raised in the plane of the rectangular waveguide 14, and there is a corresponding field strength in the center of the plate 37a, the ignition of the plasma even at low power of the fed electromagnetic wave is sufficient.
  • the plate 37a may also be sharpened at its ends arrow-shaped or semi-circular shaped.
  • a star-shaped plate 37b is shown with 6 ends, whose ends are formed as well as the ends of the plate 37a.
  • the advantage of plate 37b over plate 37a is given by the fact that in each rotational position of the plate 37b, a reliable ignition of the plasma takes place.
  • the ignition device 37 may also have 5, 7, 8 and even more ends.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un dispositif pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques, le dispositif comprenant une chambre à plasma qui est revêtue d'un diélectrique, un générateur pour générer les ondes électromagnétiques et un système de conducteurs creux pour amener les ondes électromagnétiques dans la chambre à plasma, le système de conducteurs creux présentant au moins deux points d'injection présentant chacun un embranchement de conducteur creux de champ électrique pour injecter les ondes électromagnétiques comme ondes continues dans le diélectrique.
EP14744363.4A 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence Active EP3011807B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102013215252.3A DE102013215252A1 (de) 2013-08-02 2013-08-02 Vorrichtung und Verfahren zur Behandlung von Prozessgasen in einem Plasma angeregt durch elektromagnetische Wellen hoher Frequenz
PCT/EP2014/066277 WO2015014839A1 (fr) 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence

Publications (2)

Publication Number Publication Date
EP3011807A1 true EP3011807A1 (fr) 2016-04-27
EP3011807B1 EP3011807B1 (fr) 2017-11-15

Family

ID=51228455

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14744363.4A Active EP3011807B1 (fr) 2013-08-02 2014-07-29 Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence

Country Status (3)

Country Link
EP (1) EP3011807B1 (fr)
DE (1) DE102013215252A1 (fr)
WO (1) WO2015014839A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015215858B4 (de) 2015-08-20 2019-01-24 Siltronic Ag Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102017125723A1 (de) 2017-04-25 2018-10-25 Eeplasma Gmbh Verfahren und Vorrichtung zum Wachsen eines Einkristalls
EP4108647A1 (fr) 2021-06-21 2022-12-28 eeplasma GmbH Procédé de fabrication de particules à noyau et à enveloppe chargées en engrais liquide
CN114845455A (zh) * 2022-05-07 2022-08-02 季华实验室 微波等离子体化学气相沉积装置及系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU397139A1 (ru) * 1971-01-25 1975-03-05 Устройство дл возбуждени электромагнитных волн в плазме
US5230740A (en) * 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
JP3129814B2 (ja) * 1992-01-17 2001-01-31 新日本無線株式会社 マイクロ波プラズマ装置
DE69318480T2 (de) * 1992-06-23 1998-09-17 Nippon Telegraph & Telephone Plasmabearbeitungsgerät
US5606571A (en) * 1994-03-23 1997-02-25 Matsushita Electric Industrial Co., Ltd. Microwave powered gas laser apparatus
DE19600223A1 (de) * 1996-01-05 1997-07-17 Ralf Dr Dipl Phys Spitzl Vorrichtung zur Erzeugung von Plasmen mittels Mikrowellen
FR2762748B1 (fr) * 1997-04-25 1999-06-11 Air Liquide Dispositif d'excitation d'un gaz par plasma d'onde de surface
JPH11162956A (ja) * 1997-11-25 1999-06-18 Hitachi Ltd プラズマ処理装置
DE10327853A1 (de) * 2003-06-18 2005-01-05 Krohmann, Udo, Dipl.-Ing. Verfahren und Vorrichtung zur Plasmabehandlung an Oberflächen und Stoffen mittels eines sich bewegenden Mikrowellenplasmas innerhalb einer wellenleitenden Hohlleiterstruktur
US8633648B2 (en) * 2011-06-28 2014-01-21 Recarbon, Inc. Gas conversion system
DE102011111884B3 (de) * 2011-08-31 2012-08-30 Martin Weisgerber Verfahren und Vorrichtung zur Erzeugung von thermodynamisch kaltem Mikrowellenplasma

Also Published As

Publication number Publication date
WO2015014839A1 (fr) 2015-02-05
DE102013215252A1 (de) 2015-02-05
EP3011807B1 (fr) 2017-11-15

Similar Documents

Publication Publication Date Title
DE4340224C2 (de) Einrichtung zum Erzeugen von Plasma mittels Mikrowellenstrahlung
EP1053660B1 (fr) Dispositif de production d'un jet de plasma froid non-thermique libre
DE102006048815B4 (de) Vorrichtung und Verfahren zur Erzeugung von Mikrowellenplasmen hoher Leistung
EP2080424B1 (fr) Dispositif et procede pour produire des plasmas micro-ondes de haute densite
EP3011807B1 (fr) Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence
EP0806052A1 (fr) Reacteur a plasma
DE19847848C1 (de) Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma
EP1946623B1 (fr) Dispositif pour amorcer et produire un plasma a micro-ondes diffus qui s'etend, et dispositif pour traiter des surfaces et des matieres au moyen de ce plasma
EP2751826B1 (fr) Dispositif de production de plasma micro-ondes thermodynamiquement froid
DE19801366B4 (de) Vorrichtung zur Erzeugung von Plasma
WO2006108395A1 (fr) Dispositif et procede de revetement par jet de plasma
DE102009044496B4 (de) Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
EP1819208B1 (fr) Dispositif et procédé de production de particules excitées et/ou ionisées dans un plasma
DE102013109778A1 (de) Verfahren und Vorrichtung zur kontinuierlichen Wiederaufbereitung von Abgas eines Fusionsreaktors
EP3180800B1 (fr) Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat
AT504487B1 (de) Vorrichtung zur erzeugung von plasma oder radikalen mittels mikrowellen
EP2142679B1 (fr) Procédé pour traitement de surface par plasma de composants de grand volume
DE102008009624A1 (de) Verfahren und Vorrichtung zur Reinigung der Abgase einer Prozessanlage
DE102011004749A1 (de) Plasmabearbeitungsvorrichtung und Plasmabearbeitungsverfahren
WO2019233703A1 (fr) Dispositif de traitement au plasma comprenant une source de plasma à micro-ondes linéaire et un dispositif de conduite de gaz
DE102005037550A1 (de) Vorrichtung zur Erzeugung von Plasma
DE102005015757A1 (de) Anordnung zum atmosphärischen Plasmaspritzen

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20160122

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SCHNEIDER, STEPHAN

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20161116

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20170524

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 947485

Country of ref document: AT

Kind code of ref document: T

Effective date: 20171115

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502014006251

Country of ref document: DE

REG Reference to a national code

Ref country code: NL

Ref legal event code: FP

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180215

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180215

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180216

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

REG Reference to a national code

Ref country code: DE

Ref legal event code: R026

Ref document number: 502014006251

Country of ref document: DE

PLBI Opposition filed

Free format text: ORIGINAL CODE: 0009260

PLAX Notice of opposition and request to file observation + time limit sent

Free format text: ORIGINAL CODE: EPIDOSNOBS2

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

26 Opposition filed

Opponent name: MUEGGE GMBH

Effective date: 20180816

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PLBB Reply of patent proprietor to notice(s) of opposition received

Free format text: ORIGINAL CODE: EPIDOSNOBS3

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20180729

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180729

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20180731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180731

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180731

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180729

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180731

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20180729

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20140729

Ref country code: MK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20171115

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20180315

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20171115

PLCK Communication despatched that opposition was rejected

Free format text: ORIGINAL CODE: EPIDOSNREJ1

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 947485

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190729

APBM Appeal reference recorded

Free format text: ORIGINAL CODE: EPIDOSNREFNO

APBP Date of receipt of notice of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA2O

APAH Appeal reference modified

Free format text: ORIGINAL CODE: EPIDOSCREFNO

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190729

APBQ Date of receipt of statement of grounds of appeal recorded

Free format text: ORIGINAL CODE: EPIDOSNNOA3O

PLAB Opposition data, opponent's data or that of the opponent's representative modified

Free format text: ORIGINAL CODE: 0009299OPPO

R26 Opposition filed (corrected)

Opponent name: MUEGGE GMBH

Effective date: 20180816

REG Reference to a national code

Ref country code: DE

Ref legal event code: R100

Ref document number: 502014006251

Country of ref document: DE

APBU Appeal procedure closed

Free format text: ORIGINAL CODE: EPIDOSNNOA9O

PLBN Opposition rejected

Free format text: ORIGINAL CODE: 0009273

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: OPPOSITION REJECTED

P01 Opt-out of the competence of the unified patent court (upc) registered

Free format text: CASE NUMBER: APP_40413/2024

Effective date: 20240708

27O Opposition rejected

Effective date: 20240619

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20240719

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240926

Year of fee payment: 11