EP3180800B1 - Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat - Google Patents

Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat Download PDF

Info

Publication number
EP3180800B1
EP3180800B1 EP15738293.8A EP15738293A EP3180800B1 EP 3180800 B1 EP3180800 B1 EP 3180800B1 EP 15738293 A EP15738293 A EP 15738293A EP 3180800 B1 EP3180800 B1 EP 3180800B1
Authority
EP
European Patent Office
Prior art keywords
gas
reaction chamber
etching
reactive species
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP15738293.8A
Other languages
German (de)
English (en)
Other versions
EP3180800A1 (fr
Inventor
Franz Laermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP3180800A1 publication Critical patent/EP3180800A1/fr
Application granted granted Critical
Publication of EP3180800B1 publication Critical patent/EP3180800B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Definitions

  • the present invention relates to a device for anisotropic etching of a substrate, in particular a silicon substrate, preferably an 8-inch or 200-mm silicon wafer, and a method for operating the device according to the invention.
  • Fluorine-based high-rate etching processes for silicon require both silicon-etching fluorine radicals and Teflon-forming species, so-called passivation species, which passivate the side walls of silicon structures and protect against etching attack or underetching by the spontaneously acting, highly reactive fluorine radicals.
  • the fluorine radicals and the Teflon-forming species are generated in a plasma. In general, however, they do not coexist there, but rather cancel each other out in the plasma by means of recombination reactions.
  • JP 2000 091320 A describes a plasma treatment apparatus.
  • the present invention discloses an apparatus having the features of claim 1 and a method having the features of claim 9.
  • the Teflon-forming passivation species and the silicon-etching fluorine radicals as etching species outside the respective development zones is based on a sufficiently large chain length of the plasma-polymerized Teflon-forming species, and in principle allows one continuously operating fluorine-based high-rate etching process for silicon, in which the temporal separation of the species is replaced by a spatial separation in the area of the reaction areas or development zones of the species.
  • the idea on which the present invention is based is to take this knowledge into account and to provide a device which has separate reaction chambers as a reaction area for generating the Teflon-forming species from the passivating gas on the one hand and generating the silicon-corrosive fluorine radicals from the etching gas on the other having.
  • the device has the described mixing device, by means of which the separately generated reactive species can advantageously be mixed with one another before they strike the substrate for anisotropic etching. Mixing both species is advantageous in order to achieve the most uniform, i.e. homogeneous, etching result possible over the entire surface of the silicon wafer to be processed.
  • Uncharged reactive species follow on their way from their respective reaction area, i.e. generation area, into the etching chamber to act on the substrate, i.e. for anisotropic etching of the substrate, the respective gas flows, in particular gas flows based on strengths, with which the first and second gases are introduced into the first and second reaction chambers.
  • the Teflon-forming reactive species are suitable for building up a Teflon-like protective film on a surface of the substrate to be etched, in particular on side walls of structures etched in the substrate by means of the fluorine radicals, which protective film protects the side walls from attack by the fluorine radicals.
  • the Teflon-like protective film is also called Teflon film, side film or side wall film for short.
  • the Teflon-forming reactive species generated in the passivation plasma advantageously have a minimum size or minimum length, also called minimum chain length, in order to be able to condense on the substrate and be able to crosslink there to form the Teflon film. Preferred are ten to one hundred carbon atoms per molecule of the Teflon-forming reactive species.
  • the molecules of the Teflon-forming reactive species can, for example, have the form (CF n ) m , where m can be greater than nine and less than one hundred one and n between zero and three, the case of n being two being preferred or the usual stoichiometry of a Teflon chain is.
  • the mixing device has a guide device, which tapers in a funnel shape in the direction of the etching chamber, in particular a hollow truncated cone, for mixing and / or guiding the mixed at least one first reactive species and at least one second reactive species onto the substrate.
  • a guide device which tapers in a funnel shape in the direction of the etching chamber, in particular a hollow truncated cone, for mixing and / or guiding the mixed at least one first reactive species and at least one second reactive species onto the substrate.
  • the mixing device has at least one first diversion device, by means of which, in order to divert at least part of the at least one first reactive species generated, a direct path of the at least one first reactive species generated from the first reaction chamber to the The substrate is partially or completely blocked.
  • Gas flows of the reactive species can hereby be shaped in such a way that a particularly homogeneous mixing of the different species takes place outside, in particular below, the generation zones of the respective reaction chambers.
  • the first diversion device is arranged in such a way that gas flows of the first reactive species and the second reactive species are directed into one another, which results in a significantly faster and more complete mixing over a shorter distance.
  • the diversion device is preferably made of a dielectric material, for example quartz glass.
  • the mixing device is designed as a diffusion path.
  • a diffusion path is to be understood as a path of the gases or reactive species between the reaction chambers or generation areas on the one hand and the actual etching chamber on the other. That is, a distance that the gaseous reactive species have to overcome after their generation to the substrate in the etching chamber and over which they can advantageously mix with one another through inter-diffusion processes.
  • At least a first sub-area of the first reaction chamber is completely enclosed by at least a second sub-area of the second reaction chamber.
  • the first reaction chamber can advantageously also be completely enclosed by the second partial region of the second reaction chamber.
  • the first and second reaction chambers are particularly advantageously designed as rotationally symmetrical dielectric vessels, in particular each with a shape of a hollow cylinder, which are nested concentrically within one another.
  • the first reaction chamber is advantageously located closer to the common virtual axis than the second reaction chamber and / or comprises a smaller volume than the second reaction chamber.
  • the first and the second reaction chamber can, for example, be flush with one another at both axial ends or flush with one another and extend to different lengths in the axial direction at another, opposite end.
  • the coil device has a first inductive coil which is designed to apply a first alternating electromagnetic field to the first reaction chamber; and furthermore a second inductive coil which is designed to apply a second alternating electromagnetic field to the second reaction chamber.
  • the application of the electromagnetic alternating field to the two reaction chambers can also be described as coupling a first high frequency into the first reaction chamber and a second high frequency into the second reaction chamber.
  • the inductive coils can be designed to generate identical electromagnetic fields or electromagnetic fields that differ from one another, for example with regard to intensity, flux density, etc. be individually adaptable or optimizable for the respective generation of the reactive species.
  • the first reaction chamber has a first inlet for introducing the first gas into the first reaction chamber, the first inlet being connected via a first valve device to a first gas tank and to a second gas tank, the first valve device being controllable, to introduce either a first gas species provided in the first gas tank or a second gas species provided in the second gas tank as the first gas into the first reaction chamber.
  • the second reaction chamber has a second inlet for introducing the second gas into the second reaction chamber, the second inlet being connected to the first gas tank and to the second gas tank via a second valve device, the second valve device being controllable, either the first gas species provided in the first gas tank or the in to introduce the second gas species provided to the second gas tank into the second reaction chamber as the second gas.
  • a passivating gas or an etching gas to be introduced into the first reaction chamber and / or either an etching gas or a passivating gas to be introduced into the second reaction chamber, in particular automatically and without having to carry out manual conversion.
  • Both variants for supplying the two gases can lead to specific inhomogeneities with regard to the resulting species composition, which can be advantageous or disadvantageous, despite a subsequent mixing of the two reactive species generated up to the location of the substrate to be etched.
  • this inhomogeneity can be reduced by an “averaging effect”.
  • a supply variant can be specifically selected so that other process-related inhomogeneities are corrected through the inhomogeneity caused by it.
  • the passivating gas is generated further out than the etching gas, based on a surface normal of a surface to be etched of the wafer to be etched in the radial direction.
  • fluorine-based silicon etching processes often tend to increase the etching rate over the silicon wafer as the substrate from the center of the wafer to the edge of the wafer, since silicon that consumes fluorine radicals is no longer available outside the silicon wafer, i.e. beyond its edge.
  • a higher concentration of silicon-etching fluorine radicals is available in the edge areas of the silicon wafer than in the middle of the wafer, which is completely surrounded by silicon to be etched.
  • a targeted increase in the density of the film-forming reactive species in the edge area of the silicon wafer compared to the center of the wafer can at least partially compensate for such an effect and ensure better uniformity of the etching results. With this setting, a process-related increase in the etching rate from the center of the wafer to the edge of the wafer is reduced.
  • the first and / or second valve devices can be actuated for this purpose, for example pneumatically or electromagnetically.
  • the first and the second valve device can be designed as two coupled three-way valves which, as a Y-valve, switch the relevant first or second gas optionally into the first or the second reaction chamber.
  • the switching of the first and second valve devices can take place by means of a control device of the device according to the invention.
  • the device has a temperature control device, by means of which the substrate can be brought to a predetermined operating temperature and can be kept at the predetermined operating temperature.
  • the temperature control device is advantageously designed to bring and hold the substrate to the specified operating temperature between 20 ° C. and 90 ° C., advantageously between 30 ° C. and 80 ° C., particularly advantageously between 40 ° C. and 70 ° C., inclusive.
  • the temperature control device can include a so-called "heater chiller” with deionized water, silicone oils or fluorocarbons as a heat transport medium to the substrate electrode and / or a helium wafer backside cooling as a thermal contact medium between the wafer, i.e. the substrate, and the substrate electrode.
  • a condensation threshold can be specified by means of the operating temperature of the wafer, which describes a minimum chain length of the passivation species which must be exceeded in order for the passivation species to condense on the substrate.
  • the preferred formation of a particularly soft and loosely cross-linked film morphology of the Teflon film on the substrate can be achieved, for example, in that only relatively long-chain Teflon film-forming species can condense on the wafer and cross-link there at a higher wafer temperature.
  • a passivating gas or an etching gas is introduced as the first gas and an etching gas is introduced as the second gas if a passivating gas is used as the first gas is introduced, and a passivating gas is introduced as the second gas when an etching gas is introduced as the first gas.
  • the passivating gas is advantageously a fluorocarbon, a perfluorinated alkene, in particular perfluoropropene or a perfluorinated alkyne.
  • suitable passivating species are primarily Teflon-forming monomers produced from passivating gases or other fluorocarbons and having a preferably low fluorine-to-carbon ratio, in particular two to one or lower.
  • the etching gas is advantageously sulfur hexafluoride, nitrogen trifluoride, chlorine trifluoride and / or bromine trifluoride, particularly preferably sulfur hexafluoride.
  • the method includes switching at least once between a first operating mode and a second operating mode at a predetermined switching frequency, wherein in the first operating mode an etching gas is introduced as the first gas and a passivating gas is introduced as the second gas, and wherein in the second operating mode, a passivating gas is introduced as the first gas and an etching gas is introduced as the second gas.
  • the switching frequency can in particular be between 10 Hertz and 3 millihertz.
  • a switchover frequency between 1 hertz and 30 millihertz is particularly advantageously selected, particularly preferably a switchover frequency between 100 millihertz and 50 millihertz.
  • the set gas flows of the etching gas and the passivating gas do not need to be varied because, for example, the two valve devices described above, in particular three-way or Y-valves, are used to switch between a supply to the first reaction chamber and a supply to the second reaction chamber can be.
  • the gas flows of the first and the second gas can be adapted to different spatial volume ratios of the first and the second reaction chamber in order to obtain and maintain the most stable plasma conditions possible in the respective reaction chambers.
  • the option of switching the process gases between the reaction chambers during a process or between different processes enables a to avoid harmful accumulation of Teflon film material in the reaction chambers themselves by regularly etching back a resulting chamber coating. This prevents the release of unwanted particles.
  • the alternating fields that are applied to the respective reaction chambers can also be advantageously adapted to the gas introduced.
  • the alternating field with which the passivating gas is applied can have a higher power than the alternating field with which the etching gas is applied, in particular between thirty and two hundred percent higher power, preferably between forty and one hundred percent higher performance, particularly preferably between forty-five and seventy percent higher performance.
  • the alternating switching of the etching and passivating gas between the first and the second reaction chamber leads to an improved homogeneity of the mixture of the mixed etching and passivating species after passing through the mixing device to the location of the substrate.
  • particle formation on the inner walls of the first and second reaction chambers can be avoided.
  • Fig. 1 shows a schematic cross-sectional view through a device 100 for anisotropically etching a substrate 152 according to a first Embodiment of the present invention.
  • the substrate 152 to be etched in the present example a silicon substrate, can be placed on a first outer surface 151 of an electrostatic clamping device 154 of a carrier 155.
  • the carrier 155 is connected via a matching network, shown schematically as a capacitor C in simplified form, to a first high-frequency alternating voltage generator 156, by means of which the carrier 155 can have a first high-frequency alternating voltage applied to it.
  • Helium gas as a thermal contact medium for thermally coupling the substrate 152, can be conducted to a second outer surface 149 of the carrier section 154 via a cooling feed line 157, which can be part of a more comprehensive temperature control device.
  • the second outer surface 149 of the clamping device 154 is parallel to the first outer surface 151 of the clamping device 154.
  • the carrier 155 is kept at the desired preset temperature by means of a liquid cooling circuit and is arranged in an etching chamber 150, from which gas can be pumped out by means of a pump device 158.
  • the first outer surface 151 of the clamping device 154 lies completely in a virtual plane E, the surface normal of which is parallel to a virtual axis A, which is an axis of rotational symmetry of the carrier 155.
  • the etching chamber 150 is also rotationally symmetrical about the virtual axis A of the Carrier 155.
  • an inner surface is to be understood as a surface facing the virtual axis and an outer surface is to be understood as a surface facing away from the virtual axis.
  • the etching chamber 150 essentially has the shape of a first hollow cylinder H1 which is closed on one side in the axial direction. At the open end of the first Hollow cylinder H1 is followed by a second, second hollow cylinder H2, which is closed on one side in the axial direction by means of a cover surface 123 and has a jacket surface 122.
  • a jacket surface should also be understood to mean a wall with a finite thickness.
  • the lateral surface 122 of the second hollow cylinder H2 can, for example, comprise or consist of aluminum oxide ceramic or quartz glass.
  • a "green compact” can be cast or shaped in the required geometry and then burned / sintered ("fired").
  • the axial cover surface 123 of the second and, indirectly, also the first hollow cylinder H2, H1 is not completely planar, but comprises a planar circular ring disk 124 from which a third hollow cylinder H3, closed on one side in the axial direction, with a jacket surface 121, with a Radius r3 and a cylinder height h3, is extruded as part of the lid surface 123.
  • the third hollow cylinder H3 is arranged rotationally symmetrically about the virtual axis A and concentrically with the circular ring disk 124, which is also rotationally symmetrical about the virtual axis A.
  • the third hollow cylinder H3 is open in the direction of the etching chamber 150.
  • a separating device 120 is inserted into the second hollow cylinder H2.
  • the separating device 120 is designed as a fourth hollow cylinder H4, open on both sides in the axial direction, with the same or a similarly large cylinder radius r3 as the third hollow cylinder H3.
  • the cylinder radius r3 of the third hollow cylinder H3 is smaller than the cylinder radius r1 of the second hollow cylinder H2, which can be equal to the cylinder radius r1 of the first hollow cylinder H1.
  • the fourth hollow cylinder H4 has a jacket surface 128 and a cylinder height h1, which can be equal to a cylinder height h2 of the second hollow cylinder H2.
  • the first reaction chamber 101 thus comprises a cylindrical volume with the radius r3 and a cylinder height which is the sum of the cylinder height h3 of the third Hollow cylinder H3 and the cylinder height h4 of the fourth hollow cylinder H4.
  • a volume between the inner surface of the lateral surface 122 of the second hollow cylinder H2 and the outer surface of the lateral surface 128 of the fourth hollow cylinder H4 forms a second reaction chamber 102.
  • the volume of the second reaction chamber 102 is the product of the cylinder height h2, the circle number Pi and the difference between the squares of the cylinder radii r1 and r3.
  • a direct gas exchange that is to say in particular a direct gas exchange, between the first reaction chamber 101 and the second reaction chamber 102 in the region of the plasma generation zone is structurally prevented by means of the separating device 120.
  • a direct route is to be understood as meaning, in particular, a route along a straight line.
  • a negligible leakage gas exchange which is based on an incomplete tightness between the first reaction chamber 101 and the second reaction chamber 102 at the transition between the separating device 120 and the third hollow cylinder 103, can be tolerated.
  • the separating device 120 can be formed from ceramic materials or quartz glass or comprise such materials.
  • the cover surface 123 and the separating device 120 can advantageously also be produced from a single ceramic casting, with a “green compact” being cast, shaped and then sintered in the required shape.
  • Individual ceramic parts can also be welded to one another in order to form the separating device 120 and / or the cover surface 123.
  • the top surface 123 can furthermore also be designed as a flange made of, for example, aluminum or stainless steel.
  • the ceramic parts can be connected to the first inlet 107 by means of a closing surface 125 which closes the third hollow cylinder at its axial end facing away from the etching chamber 150 and which can be designed as a flange.
  • the flange can be made of aluminum or stainless steel, for example. Seals can be used wherever gas tightness is required.
  • a first gas G1 can be conducted from a first gas tank 105 into the first reaction chamber.
  • a gas distributor ring 104 In the second reaction chamber 102 there is arranged a gas distributor ring 104, adapted to the shape of the second reaction chamber 102 and thus circular according to the first embodiment, which tangentially surrounds the separating device 120, the gas distributor ring 104 being spaced apart from both the jacket surface 122 and the separating device 120.
  • the gas distribution ring 104 is arranged rotationally symmetrically about the virtual axis A and concentrically with the second and fourth hollow cylinders H2, H4.
  • a second gas G2 can be directed from a second gas tank 106 into the gas distributor ring 104 by means of a second inlet 108, whereby the gas G2 can be introduced uniformly into the second reaction chamber 102 over the entire circumference of the second reaction chamber 102.
  • the introduction of the second gas G2 into the second reaction chamber 102 can also take place by means of gas inlets arranged radially in the jacket surface 122 of the second hollow cylinder H2 or in the top surface 123, which advantageously have a C n symmetry group, for example C. 3 , C 4 etc.
  • a first inductive coil 110 is arranged outside the third hollow cylinder H3, enclosing it tangentially.
  • a second inductive coil 112 is arranged outside the second hollow cylinder H3, enclosing it tangentially. Both inductive coils 110, 112 are rotationally symmetrical about the virtual axis A.
  • the first coil 110 By means of the first coil 110, by generating a first alternating electromagnetic field in the first reaction chamber 101, the first gas G1 in the first reaction chamber 101 can be excited to form a first inductively coupled plasma.
  • octafluorocyclobutane (with the structural formula cC 4 F 8 , a passivating gas) can be introduced into the first reaction chamber 101 as the first gas G1.
  • Teflon-forming first reactive species R1 which preferably have long-chain molecules, are formed by plasma polymerization. Longer polymer chains generally lead to a softer, more loosely crosslinked film morphology of a Teflon film on the substrate 152 to be etched.
  • Teflon film from the etching base requires less ionic action than the removal of a Teflon film formed by shorter polymer chains.
  • the etching process as a whole is more chemically dominated than physically, that is, by spontaneous etching reactions of the fluorine radicals on the etching base rather than by the action of ions. This advantageously results in high etching rates and high selectivity for the mask.
  • the condensation of the Teflon-forming reactive species on the wafer can advantageously take place by selecting a suitable temperature control of the substrate 152, for example by the temperature control device.
  • the second coil 112 By means of the second coil 112, by generating a second alternating electromagnetic field in the second reaction chamber 102, the second gas G2 in the second reaction chamber 102 can be excited to form a second inductively coupled plasma.
  • sulfur hexafluoride (with the structural formula SF 6 , an etching gas) can be introduced into the second reaction chamber 102 as a second gas. Fluorine radicals are thus generated as second reactive species R2 in the high-density second plasma that is generated.
  • the first and the second coil 112 are for this purpose via an electrical matching unit 114 (English: “matching unit” or “matchbox”, in German also called high-frequency matching networks), which are electrically connected to a high-frequency generator device 116, to act on the first and the second reaction chamber 101, 102 with a respective electromagnetic alternating field fed.
  • Ion acceleration that is to say an acceleration of charged particles generated in the plasmas, so-called ions towards the substrate 152 to be etched, can be achieved by applying the first high-frequency alternating voltage to the carrier 155.
  • the two reactive species R1, R2 enter the mixing device 130, 132, which is designed for better mixing of the first and second reactive species R1, R2.
  • the mixing device 130, 132 comprises a hollow truncated cone-shaped guide device 130, which tapers in the direction of the etching chamber 150 in a funnel shape, for guiding the first reactive species R1 and second reactive species R2 mixed with one another towards the substrate 152.
  • the mixing device 130, 132 is advantageously composed of one Dielectric material made, with a production from metal is also conceivable.
  • the mixing device 130, 132 comprises a diversion device 132 arranged spatially between the first reaction chamber 101 and the etching chamber 150 for diverting at least part of the first reactive species R1.
  • a direct path for the first reactive species R1 from the first reaction chamber R1 to the substrate 152 is completely blocked by means of the diversion device 132.
  • the diversion device 132 is a baffle plate arranged rotationally symmetrically about the virtual axis A and has a trapezoidal cross-section that widens in the direction of the etching chamber 150 in a plane in which the virtual axis A lies.
  • the diverting device 132 By means of the diverting device 132, the first reactive species R1 are diverted in a radial outward direction, referred to the virtual axis A, into a flow of the second reactive species R2, whereby the mixing of the first and second reactive species R1, R2 is improved.
  • the first and second reactive species R1, R2 mixed with one another enter the etching chamber 150 through an opening 131 in the guide device 130 and are directed and / or channeled towards the substrate 152.
  • Fig. 2 shows a schematic cross-sectional view through a device 200 for anisotropically etching a substrate 152 according to a second embodiment of the present invention.
  • the device 200 according to the second embodiment is a variant of the device 100 according to the first embodiment and differs therefrom in the design of the mixing device 130, 232, 234.
  • the mixing device 130, 232, 234 has a first diversion device 232 and a second diversion device 234.
  • the first diversion device 232 is a variant of the diversion device 132, which instead of a rotational symmetry has a C n symmetry about the virtual axis A, since, in contrast to the diversion element 132, individual circle segments from the cross-section of the - viewed from the axial direction of the virtual axis A - first diversion device 232 are removed. In each gap created by the removal of the circle segments fits a circle segment of the second diversion device 234.
  • the second diversion device 234 is a funnel which is rotationally symmetrical about the virtual axis A and tapering in the direction of the etching chamber 150, which has a C n symmetry instead of a rotational symmetry, since from the - viewed from the axial direction of the virtual axis A - Cross-section of the second diversion element 232 are also segments of a circle removed.
  • a circle segment of the first diversion device 232 appropriately engages in each gap resulting from the removal of the circle segments from the second diversion device 232, and vice versa.
  • the circle segments of the first and / or the second diversion device 232, 234 are preferably designed as quarter, sixth, eighth, tenth, twelfth of a circle segments etc. That is, the first and / or the second diversion device 232, 234 preferably have a C 2m symmetry with respect to the virtual axis A, where m is an integer, preferably an integer between one and six.
  • part of the generated second reactive species R2 is passed between the separating device 120 and the second diversion element 234 in the radial direction towards the virtual axis A through the gaps in the first diversion device 232.
  • part of the generated first reactive species R1 is passed between the separating device 120 and the first diversion device 232 in the radial direction away from the virtual axis A through the gaps in the second diversion element 234. This improves the mixing of the two reactive species R1, R2 on the way from the two reaction chambers 101, 102 to the substrate 152.
  • Fig. 3 shows a schematic cross-sectional view through a device 300 for anisotropically etching a substrate 152 according to a third embodiment of the present invention.
  • the device 300 according to the third embodiment is a variant of the device 100 according to the first embodiment and differs therefrom in the design of the mixing device 130, 332.
  • the diversion device 332 according to the third embodiment is a variant of the diversion device 132 according to the first embodiment and, compared to this, furthermore has an opening 336 in the area of the virtual axis A, through which the generated first reactive species R1 at least partially on a direct path can move from the reaction chamber 1 to the substrate 152.
  • the opening 336 in the diversion device 332 is preferably elliptical, in particular circular and rotationally symmetrical about the virtual axis A.
  • the device according to the third embodiment is particularly suitable for the development described above, according to which two three-way valves are arranged between the first and the second gas tank 105, 106 and the first and second inlet 107, 108, so that in both the first and the second reaction chamber 101, 102 gases from the first and from the second gas tank 105, 106, in particular alternately, can be introduced.
  • Fig. 4 shows a schematic cross-sectional view through a device 400 for anisotropically etching a substrate 152 according to a fourth embodiment of the present invention.
  • the device 400 according to the fourth embodiment is a variant of the device 100 according to the first embodiment and differs therefrom in the shape and / or the arrangement of the first reaction chamber 401, the second reaction chamber 402, the mixing device 430, 432, 434 and the first inductive coil 410 and the second inductive coil 112.
  • the first inductive coil 410 is attached tangentially to the hollow cylinder H4 and sits in a gap between the individual walls forming the partition walls 420.
  • the inductive coil 410 significantly generates the first plasma in the first reaction chamber 401 and also contributes to the plasma discharge in the second reaction chamber 402.
  • the main excitation of the second plasma in the second reaction chamber 402 occurs through the second inductive coil 112.
  • the device 400 according to the fourth embodiment does not have a third hollow cylinder H3, which consists of a second hollow cylinder H2, in the axial direction Direction, is extruded at one end closing lid surface.
  • the fourth hollow cylinder H4 of the device 400 which forms the separating device 420, terminates flush in the axial direction at both ends with the axial ends of the second hollow cylinder H2.
  • the volume of the first reaction chamber 401 is the product of the height h4 of the fourth hollow cylinder, the circle number Pi and the square of the cylinder radius r1.
  • the first inductive coil 410 is arranged on the lateral surface of the fourth hollow cylinder H4 in the gap between the partition walls 420.
  • the first inductive coil 410 is fed by electrical feeds from the first coil 410 to the adaptation device 114.
  • the electrical feeds also run in the gap between the individual walls forming the separating device 420.
  • the mixing device 130, 432, 434 of the device 400 has, in addition to the guide device 130, a first diversion device 432 which is arranged on the axial end of the fourth hollow cylinder H4 facing the etching chamber 150.
  • the mixing device 130, 432, 434 also has a second diversion device 434, which is arranged on the axial end of the second hollow cylinder H2 facing the etching chamber 150.
  • the two diversion devices 432, 434 can be attached to the separating device 420 or can be formed in one piece with it.
  • the first diversion device 432 comprises a multiplicity of pipe pieces which are designed to in each case divert part of the generated first reactive species R1 in the radial direction away from the virtual axis A, in particular additionally in the direction of the carrier 155.
  • the second diversion device 434 comprises a multiplicity of pipe pieces, each of which guides part of the generated second reactive species R2 in the radial direction towards the virtual axis A, in particular additionally towards the carrier 155.
  • the pipe sections of the first diversion device 432 which lead to the virtual axis A and the pipe sections of the second diversion device 434 which lead away from the virtual axis A alternate here a circumference of a virtual, concentric with the virtual axis A and perpendicular to the virtual axis A circle.
  • the first and the second diversion device 432, 434 can, jointly or each individually, have a C n symmetry group with respect to the virtual axis A.
  • half-pipe sections that is to say pipe sections cut open lengthwise, or other directors according to the described arrangement can also be used.
  • Fig. 5 shows a schematic cross-sectional view through a device 500 for anisotropically etching a substrate 152 according to a fifth embodiment of the present invention.
  • the device 500 according to the fifth embodiment is a variant of the device 400 according to the fourth embodiment and differs therefrom in particular in the shape and / or the arrangement of the second reaction chamber 502, the mixing device 130 and the inductive coil 510.
  • the device 500 does not have a second hollow cylinder H2, which is placed on the first hollow cylinder H1, but instead has a flat dielectric cover plate 523, for example made of an aluminum oxide ceramic or quartz glass, by means of which the first hollow cylinder H1 is at one axial end is locked.
  • a hollow dielectric cylinder H4 is suitably attached or suspended from the top plate.
  • the guide device 130 adjoins below the cover plate 523.
  • the guide device 130 tapers in a direction from the cover plate 523 to the carrier 155, funnel-shaped from a circular radius equal to the cylinder radius r1 of the first hollow cylinder H1 to a smaller circular radius, which can be, for example, equal to the cylinder radius r4 of the fourth hollow cylinder H4.
  • the first reaction chamber 501 and the second reaction chamber 502 are enclosed by the guide device 130 both with regard to their expansion in the axial direction and with regard to their expansion in the radial direction, in each case based on the virtual axis A.
  • the height h4 of the fourth hollow cylinder H4 is less than a height h5, in the axial direction, of the hollow truncated conical guide device 130.
  • the second reaction chamber 502 comprises a volume between an inner surface 537 of FIG Guide device 130 and an outer surface 528 of the jacket surface 522 of the fourth hollow cylinder H4.
  • the device 500 has only a single inductive coil 510 designed as a spiral flat coil.
  • the inductive coil 510 is arranged on, in particular on an external surface 527 of the dielectric cover surface 523 facing away from the etching chamber 150, it being possible for passages through the coil 510 to be provided for the two inlets 107, 108.
  • the coil 510 can be embodied as a continuous spiral-shaped coil.
  • the coil 510 can, however, also be subdivided into an inner and an outer spiral-shaped partial coil L1, L2, which can also be fed independently of one another by means of the adapter 114.
  • the inner coil element L1 can be designed to apply a first alternating electromagnetic field to the first reaction chamber 501 and the outer coil element L2 can be designed to apply a second alternating electromagnetic field to the second reaction chamber 502.
  • Figures 7a to 7f2 show different design forms, such as a first coil section L1 and a second coil section L2 via an adapter 114, which optionally has two sub-adapter 114a, 114b, can be connected to the high-frequency generator 116 and can thus be fed.
  • the high-frequency generator device can comprise one or two separate and independent high-frequency AC voltage generators 117, 118.
  • a high-frequency splitter 119 is also used.
  • the Figures 7f1 and 7f2 show alternative designs for the in Fig. 7f
  • the matching circuit 114c has three capacitors C1, C2, C3, each with adjustable electrical capacitance.
  • Fig. 6 shows a schematic cross-sectional view through a device 600 for anisotropically etching a substrate 152 according to a sixth embodiment of the present invention.
  • the device 600 according to the sixth embodiment is a variant of the device 500 according to the fifth embodiment and differs therefrom in particular in FIG Shape of the first and second reaction chambers 601, the mixing device 130 and the inductive coil 610.
  • a dielectric cover dome 623 is provided, which is formed, for example, from an aluminum oxide ceramic or from quartz glass.
  • an internal surface 629 of the cover dome 623 which faces the etching chamber 150, has an axis around the virtual axis A. rotationally symmetrical separating device 620 formed or suitably fastened to the cover dome 623 or suspended from it.
  • the separating device 620 has separating walls 628 which extend in the direction of the etching chamber 150 and are concave with respect to the virtual axis A.
  • the partition walls can be formed in one piece with the cover dome 623, but they can also be attached to the cover dome 623, for example by means of welding or hanging.
  • the first reaction chamber 601 comprises the volume within an inner surface 262 of the partition walls 628 of the partition device 620.
  • the second reaction chamber 602 comprises the volume which is positioned both outside an outer surface 625 of the partition walls 628 of the partition device 620 and within the internal surface 629 of the dome cover 623 .
  • the two reaction chambers 601, 602 lie completely outside the first hollow cylinder H1, while the guide device 130 is arranged completely inside the first hollow cylinder H1.
  • the inductive coil 610 is, like the inductive coil 510 according to the fifth embodiment, formed in a spiral shape, but in contrast to the coil 510 not flat, but dome-shaped along an external surface 627 of the cover dome 623, the external surface 627 facing away from the etching chamber 150 is.
  • the coil 610 can be designed as a continuous coil, but can also be subdivided into an inner and an outer sub-coil L1, L2, which can also be fed independently of one another by means of the adapter 114.
  • the inner coil element L1 can be designed to apply the first alternating electromagnetic field to the first reaction chamber 601 and the outer coil element L2 can be designed to apply the second alternating electromagnetic field to the second reaction chamber 602.
  • the inner and outer coil sections L1, L2 and the matching device 114 can, for example, according to FIG Figures 7a to 7f2
  • the design forms shown and can be fed with high-frequency power, for example, separately and independently of one another.
  • Fig. 8 shows a schematic cross-sectional view through a device 700 for anisotropically etching a substrate 152 according to a seventh embodiment of the present invention.
  • Fig. 8 shows a schematic cross-sectional view through a device 700 for anisotropically etching a substrate 152 according to a seventh embodiment of the present invention.
  • the device 700 according to the seventh embodiment is a variant of the device 100 according to the first embodiment and differs from this in the shape of the mixing device 130, as well as the third hollow cylinder H3 and the fourth hollow cylinder H4.
  • the third hollow cylinder H3 and the fourth hollow cylinder H4 are integrally formed or assembled and inserted into a circular opening 723 in the circular ring disc 124 that is rotationally symmetrical about the virtual axis A in such a way that the fourth hollow cylinder H4 is used to separate the first and second Reaction chamber 101, 102 protrudes through the circular ring disk 124, while the third hollow cylinder H3 is partially in sealing contact with an external surface 127 of the circular ring disk 124 facing away from the etching chamber 150.
  • the cylinder radius r3 of the third hollow cylinder H3 is greater than the cylinder radius r4 of the fourth hollow cylinder H4, which are both smaller than the cylinder radius r1 of the first hollow cylinder H1.
  • the device 700 only has the guide device 130 as a mixing device.
  • the fourth hollow cylinder H4 can also be completely omitted, ie the separation of the two reactive species in the area of the second reaction chamber 102 takes place exclusively via the spatial distance between the gas outlet from the boiler, which the third hollow cylinder H3 forms , on the one hand and the second inductive coil 112 or the second reaction chamber 102 on the other hand, or by separating the gas flows from the gas distributor ring 104 on the one hand and the third hollow cylinder H3 on the other hand, or by the kinetics of the initially separately flowing gases or species.
  • the device 700 according to the seventh embodiment can be operated, for example, with the following first parameter set: a pressure in the reaction chambers 101, 102 and the etching chamber 150 of between three and twenty pascals, preferably between six and eight pascals, particularly preferably six and a half pascals; a power of two thousand five hundred watts across the first inductive coil 110; one thousand seven hundred watts of power across the second inductive coil 112; an alternating voltage applied to the carrier 155 with a power of fifty watts and a frequency of 13.56 megahertz; a pressure of the helium gas in the cooling line 157 of between one and three pascals, preferably 2 pascals; a temperature of the substrate 155 of twenty-five degrees Celsius; Octafluorocyclobutane as the first gas G1 with a flow through the first inlet 107 of two hundred standard cubic centimeters per minute; and smoldering hexafluoride as the second gas G2 having a flow through the second inlet 108
  • a second set of parameters, with which the device 700 according to the seventh embodiment can be operated, differs from the first set of parameters in that the alternating voltage applied to the carrier 155 has a power of twenty-five watts and the temperature of the carrier 155 is fifty degrees Celsius or fifty degrees Celsius. is tempered on it.
  • Fig. 8 shows a schematic flow diagram for explaining a method for operating a device 100 according to the invention; 200; 300, 400, 500; 600; 700
  • the first gas G1 is in the first reaction chamber 101; 401; 501; 601 initiated.
  • the second gas G2 is in the second reaction chamber 102; 402; 502; 602 initiated, simultaneously with the introduction of the first gas G1 into the first reaction chamber 101; 401; 501; 601.
  • at least one electromagnetic alternating field for generating the reactive species R1 from the first gas G1 and for generating the second reactive species R2 from the second gas G2 is generated.
  • the first high-frequency alternating voltage is applied to the carrier 155 in order to accelerate the electrically charged particles generated in the plasma zones, the so-called ions, onto the substrate 152.
  • the present invention has been described above on the basis of preferred exemplary embodiments, it is not restricted thereto, but rather can be modified in many different ways.
  • the invention can be changed or modified in diverse ways without deviating from the essence of the invention.
  • the mixing devices described with reference to various embodiments and their diversion devices can also be combined with one another or replaced by one another.
  • different plasma source or boiler arrangements can be combined with any mixing devices, in a departure from the exemplary embodiments shown.
  • a mere diffusion path between the plasma sources and the location of the silicon wafer can also serve as the simplest variant of a mixing device. It is The term diffusion path means a path over which the two gases or reactive species flow together in the direction of the substrate, i.e. the etching chamber, after leaving their production areas, the two reactive species being mixed by interdiffusion processes along this path.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Claims (11)

  1. Dispositif pour la gravure anisotrope d'un substrat, comprenant :
    une première chambre de réaction (101 ; 401 ; 501 ; 601), dans laquelle un premier gaz (G1) peut être introduit ;
    une deuxième chambre de réaction (102 ; 402 ; 502 ; 602), dans laquelle un deuxième gaz (G2) peut être introduit ;
    au moins un appareil à bobines (110, 112 ; 410, 112 ; 510 ; 610 ; L1, L2), au moyen duquel au moins un champ électromagnétique alternatif peut être généré ;
    au moins une première espèce réactive (R1) pouvant être générée par sollicitation du premier gaz introduit (G1) dans la première chambre de réaction (101 ; 401 ; 501 ; 601) avec l'au moins un champ électromagnétique alternatif généré, et au moins une deuxième espèce réactive (R2) pouvant être générée par sollicitation du deuxième gaz introduit (G2) dans la deuxième chambre de réaction (102 ; 402 ; 502 ; 602 ; 702) avec l'au moins un champ électromagnétique alternatif généré ;
    un appareil de séparation (120 ; 420 ; 620 ; 720), au moyen duquel un échange direct de gaz entre la première chambre de réaction (101; 401; 501; 601) et la deuxième chambre de réaction (102 ; 402 ; 502 ; 602) est empêché ou inhibé ;
    une chambre de gravure (150) pour la réception du substrat à graver de manière anisotrope (152) ; et
    un appareil de mélange (130 ; 130, 132 ; 232, 243 ; 332 ; 432, 434), qui est agencé et configuré de telle sorte que l'au moins une première espèce réactive (R1) générée et l'au moins une deuxième espèce réactive (R2) générée se mélangent l'une avec l'autre dans l'appareil de mélange (130 ; 130, 132 ; 232, 243 ; 332 ; 432, 434) lors d'un déplacement à partir des deux chambres de réaction (101, 102 ; 401, 402 ; 501, 502 ; 601, 602) en direction de la chambre de gravure (150) et pénètrent mélangées l'une avec l'autre dans la chambre de gravure (150) pour la gravure anisotrope du substrat (152) ;
    caractérisé en ce que
    l'appareil de mélange (130 ; 130, 132 ; 130, 232, 234 ; 130, 332 ; 130, 432, 434) comprend au moins un premier appareil de déviation (132 ; 232 ; 332 ; 432), au moyen duquel, pour la déviation d'au moins une partie de l'au moins une première espèce réactive (R1) générée, un chemin direct de l'au moins une première espèce réactive (R1) générée à partir de la première chambre de réaction (101; 401; 501; 601; 701) vers le substrat (152) est partiellement ou complètement bloqué ; et
    dans lequel le premier appareil de déviation (132 ; 232 ; 332 ; 432) est agencé de telle sorte que des courants gazeux de la première espèce réactive (R1) et de la deuxième espèce réactive (R2) sont dirigés l'un dans l'autre.
  2. Dispositif selon la revendication 1, dans lequel l'appareil de mélange (130 ; 130, 132 ; 232, 243 ; 332 ; 432, 434) comprend un appareil de guidage (130) se rétrécissant en forme d'entonnoir en direction de la chambre de gravure (150) pour le guidage de l'au moins une première espèce réactive (R1) et l'au moins une deuxième espèce réactive (R2) mélangées l'une avec l'autre sur le substrat (152).
  3. Dispositif selon l'une quelconque des revendications 1 ou 2 précédentes, dans lequel l'appareil de mélange est configuré sous la forme d'une section de diffusion.
  4. Dispositif selon l'une quelconque des revendications 1 à 3 précédentes,
    dans lequel au moins une première zone partielle (H4) de la première chambre de réaction (101 ; 401 ; 501 ; 601 ; 701) est complètement entourée par au moins une deuxième zone partielle (H2) de la deuxième chambre de réaction (102 ; 402 ; 502 ; 602 ; 702).
  5. Dispositif selon l'une quelconque des revendications 1 à 4 précédentes,
    dans lequel l'appareil à bobines (110, 112 ; 410, 112 ; L1, L2) comprend une première bobine inductive (110 ; 410 ; L1), qui est configurée pour la sollicitation de la première chambre de réaction (101 ; 401 ; 501 ; 601) avec un premier champ électromagnétique alternatif ; et dans lequel l'appareil à bobines (110, 112 ; 410, 112 ; L1, L2) comprend en outre une deuxième bobine inductive (112 ; L2), qui est configurée pour la sollicitation de la deuxième chambre de réaction (102 ; 402 ; 502 ; 602) avec un deuxième champ électromagnétique alternatif.
  6. Dispositif selon l'une quelconque des revendications 1 à 5 précédentes, dans lequel la première chambre de réaction (101 ; 401 ; 501 ; 601) comprend une première introduction (107) pour l'introduction du premier gaz (G1) dans la première chambre de réaction (101; 401; 501; 601) ; dans lequel la première introduction (107) est reliée à un premier réservoir de gaz (105) et à un deuxième réservoir de gaz (106) par l'intermédiaire d'un premier appareil à soupape ; dans lequel le premier appareil à soupape est apte à être commandé pour introduire soit une première espèce gazeuse mise à disposition dans le premier réservoir de gaz (105), soit une deuxième espèce gazeuse mise à disposition dans le deuxième réservoir de gaz (106) en tant que le premier gaz (G1) dans la première chambre de réaction (101 ; 401 ; 501 ; 601) ;
    et/ou
    dans lequel la deuxième chambre de réaction (102 ; 402 ; 502 ; 602) comprend une deuxième introduction (108) pour l'introduction du deuxième gaz (G2) dans la deuxième chambre de réaction (102 ; 402 ; 502 ; 602) ; dans lequel la deuxième introduction (108) est reliée au premier réservoir de gaz (105) et au deuxième réservoir de gaz (106) par l'intermédiaire d'un deuxième appareil à soupape ; dans lequel le deuxième appareil à soupape est apte à être commandé pour introduire soit une première espèce gazeuse mise à disposition dans le premier réservoir de gaz (105), soit une deuxième espèce gazeuse mise à disposition dans le deuxième réservoir de gaz (106) en tant que le deuxième gaz (G2) dans la deuxième chambre de réaction (102 ; 402 ; 502 ; 602).
  7. Dispositif selon l'une quelconque des revendications 1 à 6 précédentes, comprenant un appareil de conditionnement en température (157), au moyen duquel le substrat (152) peut être amené à une température d'exploitation prédéterminée comprise entre vingt degrés Celsius et quatre-vingt-dix degrés Celsius, chacun inclus, et peut être maintenu à la température d'exploitation prédéterminée.
  8. Dispositif selon l'une quelconque des revendications 1 à 7 précédentes,
    dans lequel le premier gaz (G1) est un gaz de passivation ou un gaz de gravure ;
    dans lequel le deuxième gaz (G2) est un gaz de gravure lorsque le premier gaz (G1) est un gaz de passivation ; et dans lequel le deuxième gaz (G2) est un gaz de passivation lorsque le premier gaz (G1) est un gaz de gravure ;
    dans lequel le gaz de passivation est un hydrocarbure fluoré, un alcène perfluoré, de préférence l'hexafluoropropène, un alcyne perfluoré ou un alcane cyclique perfluoré, de préférence l'octafluorocyclobutane ;
    et
    dans lequel le gaz de gravure est un gaz délivrant du fluor, de préférence l'hexafluorure de soufre ou le trifluorure d'azote.
  9. Procédé d'exploitation d'un dispositif selon l'une quelconque des revendications 1 à 8 précédentes, comprenant les étapes suivantes :
    l'introduction (S01) du premier gaz (G1) dans la première chambre de réaction (101 ; 401 ; 501 ; 601) ;
    l'introduction (S02) du deuxième gaz (G2) dans la deuxième chambre de réaction (102 ; 402 ; 502 ; 602) simultanément à l'introduction du premier gaz (G1) dans la première chambre de réaction (101 ; 401 ; 501 ; 601) ; et
    la génération (S03) de l'au moins un champ électromagnétique alternatif pour la génération de l'au moins une espèce réactive (R1) à partir du premier gaz (G1) et pour la génération de l'au moins une deuxième espèce réactive (R2) à partir du deuxième gaz (G2).
  10. Procédé selon la revendication 9,
    dans lequel un gaz de passivation ou un gaz de gravure est introduit en tant que premier gaz (G1) ;
    dans lequel un gaz de gravure est introduit en tant que deuxième gaz (G2) lorsqu'un gaz de passivation est introduit en tant que premier gaz (G1), et dans lequel un gaz de passivation est introduit en tant que deuxième gaz (G2) lorsqu'un gaz de gravure est introduit en tant que premier gaz (G1) ;
    dans lequel le gaz de passivation est un hydrocarbure fluoré, un alcène perfluoré, de préférence l'hexafluoropropène, un alcyne perfluoré ou un alcane cyclique perfluoré, de préférence l'octafluorocyclobutane ; et
    dans lequel le gaz de gravure est un gaz délivrant du fluor, de préférence l'hexafluorure de soufre ou le trifluorure d'azote.
  11. Procédé selon l'une quelconque des revendications 9 ou 10 précédentes,
    dans lequel on commute au moins une fois avec une fréquence de commutation prédéterminée entre un premier mode d'exploitation et un deuxième mode d'exploitation, ou entre un deuxième mode d'exploitation et un premier mode d'exploitation, ; dans lequel, dans le premier mode d'exploitation, un gaz de gravure est introduit en tant que premier gaz (G1) et un gaz de passivation est introduit en tant que deuxième gaz (G2) ; et dans lequel, dans le deuxième mode d'exploitation un gaz de passivation est introduit en tant que premier gaz (G1) et un gaz de gravure est introduit en tant que deuxième gaz (G2).
EP15738293.8A 2014-08-14 2015-07-06 Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat Active EP3180800B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014216195.9A DE102014216195A1 (de) 2014-08-14 2014-08-14 Vorrichtung zum anisotropen Ätzen eines Substrats und Verfahren zum Betreiben einer Vorrichtung zum anisotropen Ätzen eines Substrats
PCT/EP2015/065298 WO2016023683A1 (fr) 2014-08-14 2015-07-06 Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat

Publications (2)

Publication Number Publication Date
EP3180800A1 EP3180800A1 (fr) 2017-06-21
EP3180800B1 true EP3180800B1 (fr) 2021-12-22

Family

ID=53610857

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15738293.8A Active EP3180800B1 (fr) 2014-08-14 2015-07-06 Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat

Country Status (5)

Country Link
US (1) US10497543B2 (fr)
EP (1) EP3180800B1 (fr)
CN (1) CN106575616B (fr)
DE (1) DE102014216195A1 (fr)
WO (1) WO2016023683A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950420B2 (en) * 2017-04-04 2021-03-16 Fuji Corporation Atmospheric pressure plasma device
JP2022049494A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体製造装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653633B1 (fr) * 1989-10-19 1991-12-20 Commissariat Energie Atomique Dispositif de traitement chimique assiste par un plasma de diffusion.
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP2000031126A (ja) * 1998-07-15 2000-01-28 Toshiba Corp レジストの除去方法
JP4056144B2 (ja) * 1998-09-10 2008-03-05 株式会社エフオーアイ プラズマ処理装置
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
KR100408405B1 (ko) * 2001-05-03 2003-12-06 삼성전자주식회사 반도체 소자의 제조 장치
FR2834382B1 (fr) 2002-01-03 2005-03-18 Cit Alcatel Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
GB2396053B (en) * 2002-10-23 2006-03-29 Bosch Gmbh Robert Device and process for anisotropic plasma etching of a substrate,in particular a silicon body
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
WO2008007520A1 (fr) 2006-07-14 2008-01-17 Konica Minolta Holdings, Inc. Dispositif d'affichage à cristaux liquides et procédé de fabrication
US8183161B2 (en) * 2006-09-12 2012-05-22 Tokyo Electron Limited Method and system for dry etching a hafnium containing material
KR100927375B1 (ko) * 2007-09-04 2009-11-19 주식회사 유진테크 배기 유닛 및 이를 이용하는 배기 조절 방법, 상기 배기 유닛을 포함하는 기판 처리 장치
JP4977730B2 (ja) * 2009-03-31 2012-07-18 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
CN102484065B (zh) * 2009-09-09 2015-04-01 株式会社爱发科 基板处理装置的运行方法
JP5857896B2 (ja) 2012-07-06 2016-02-10 東京エレクトロン株式会社 成膜装置の運転方法及び成膜装置
GB201309583D0 (en) * 2013-05-29 2013-07-10 Spts Technologies Ltd Apparatus for processing a semiconductor workpiece
KR101526507B1 (ko) * 2013-11-15 2015-06-09 피에스케이 주식회사 기판 처리 장치 및 방법

Also Published As

Publication number Publication date
DE102014216195A1 (de) 2016-02-18
WO2016023683A1 (fr) 2016-02-18
CN106575616A (zh) 2017-04-19
EP3180800A1 (fr) 2017-06-21
US20170221732A1 (en) 2017-08-03
US10497543B2 (en) 2019-12-03
CN106575616B (zh) 2020-02-14

Similar Documents

Publication Publication Date Title
EP1483780A2 (fr) Dispositif et procede de gravure au plasma anisotrope d'un substrat
EP1053660B1 (fr) Dispositif de production d'un jet de plasma froid non-thermique libre
DE112007003640B4 (de) Vorrichtung zur Erzeugung eines Plasmas mittels einer dielektrischen Barrierenentladung
DE69325633T2 (de) Elektrostatische Haltevorrichtung benutzbar in Hochdichteplasma
EP0349556B1 (fr) Procede et dispositif de traitement de la surface de semi-conducteurs par bombardement de particules
DE2601288A1 (de) Gasaetzvorrichtung, insbesondere zur herstellung von halbleitervorrichtungen
WO2001088962A1 (fr) Installation de gravure au plasma
DE10145131B4 (de) Vorrichtung zum Erzeugen eines Aktivgasstrahls
DE112012004749T5 (de) Ringplasmakanal mit variierenden Querschnittsflächen entlang des Kanals
EP1767068A2 (fr) Dispositif pour traiter un substrat au moyen d'au moins un jet de plasma
EP3180800B1 (fr) Dispositif de gravure anisotrope d'un substrat et procédé pour faire fonctionner un dispositif de gravure anisotrope d'un substrat
DE2157606A1 (de) Verfahren und einrichtung zur waermebehandlung eines materials durch ein bogenentladungsplasma
DE69506209T2 (de) Feste ringförmige Elektrode für Gasentladung
EP1554747A2 (fr) Installation au plasma et procede de gravure anisotrope de structures dans un substrat
EP2636054B1 (fr) Dispositif de traitement de substrats
EP3011807A1 (fr) Dispositif et procédé pour traiter des gaz de traitement dans un plasma excité par des ondes électromagnétiques à haute fréquence
DE10203543B4 (de) Vorrichtung zur Erzeugung eines APG-Plasmas
WO2013029593A2 (fr) Dispositif de production de plasma micro-ondes thermodynamiquement froid
EP2499654A1 (fr) Dispositif de production de plasma à l'aide de micro-ondes
DE102010020591A1 (de) Plasmagenerator sowie Verfahren zur Erzeugung und Anwendung eines ionisierten Gases
DE102008009624A1 (de) Verfahren und Vorrichtung zur Reinigung der Abgase einer Prozessanlage
DE19930925B4 (de) Plasmagenerator
WO2024200763A1 (fr) Échangeur de chaleur
WO2019233703A1 (fr) Dispositif de traitement au plasma comprenant une source de plasma à micro-ondes linéaire et un dispositif de conduite de gaz
DE19510827C2 (de) Verfahren und Vorrichtung zum Erzeugen reaktiver Gase

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170314

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ROBERT BOSCH GMBH

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20210929

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 502015015516

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1457624

Country of ref document: AT

Kind code of ref document: T

Effective date: 20220115

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20220322

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20211222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20220322

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20220323

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20220422

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 502015015516

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20220422

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

26N No opposition filed

Effective date: 20220923

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20220706

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20220731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220706

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220731

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220706

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220706

REG Reference to a national code

Ref country code: AT

Ref legal event code: MM01

Ref document number: 1457624

Country of ref document: AT

Kind code of ref document: T

Effective date: 20220706

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20220706

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230724

Year of fee payment: 9

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20150706

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20211222

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240919

Year of fee payment: 10

REG Reference to a national code

Ref country code: DE

Ref legal event code: R084

Ref document number: 502015015516

Country of ref document: DE