DE69506209T2 - Feste ringförmige Elektrode für Gasentladung - Google Patents

Feste ringförmige Elektrode für Gasentladung

Info

Publication number
DE69506209T2
DE69506209T2 DE69506209T DE69506209T DE69506209T2 DE 69506209 T2 DE69506209 T2 DE 69506209T2 DE 69506209 T DE69506209 T DE 69506209T DE 69506209 T DE69506209 T DE 69506209T DE 69506209 T2 DE69506209 T2 DE 69506209T2
Authority
DE
Germany
Prior art keywords
gas discharge
fixed ring
shaped electrode
electrode
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69506209T
Other languages
English (en)
Other versions
DE69506209D1 (de
Inventor
George N Steinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ipec Precision Inc
Original Assignee
Ipec Precision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipec Precision Inc filed Critical Ipec Precision Inc
Publication of DE69506209D1 publication Critical patent/DE69506209D1/de
Application granted granted Critical
Publication of DE69506209T2 publication Critical patent/DE69506209T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69506209T 1994-10-13 1995-10-06 Feste ringförmige Elektrode für Gasentladung Expired - Fee Related DE69506209T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/322,820 US5567255A (en) 1994-10-13 1994-10-13 Solid annular gas discharge electrode

Publications (2)

Publication Number Publication Date
DE69506209D1 DE69506209D1 (de) 1999-01-07
DE69506209T2 true DE69506209T2 (de) 1999-04-22

Family

ID=23256578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506209T Expired - Fee Related DE69506209T2 (de) 1994-10-13 1995-10-06 Feste ringförmige Elektrode für Gasentladung

Country Status (6)

Country Link
US (1) US5567255A (de)
EP (1) EP0707337B1 (de)
JP (1) JP2723489B2 (de)
KR (1) KR0165725B1 (de)
DE (1) DE69506209T2 (de)
IL (1) IL115601A0 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6086710A (en) * 1995-04-07 2000-07-11 Seiko Epson Corporation Surface treatment apparatus
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6391216B1 (en) * 1997-09-22 2002-05-21 National Research Institute For Metals Method for reactive ion etching and apparatus therefor
US6063235A (en) * 1998-08-14 2000-05-16 Plasmasil, Llc Gas discharge apparatus for wafer etching systems
US6261406B1 (en) 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US7157659B2 (en) 2002-08-26 2007-01-02 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
CN1754409B (zh) * 2002-08-30 2010-07-28 积水化学工业株式会社 等离子处理装置
CN100511583C (zh) * 2003-03-06 2009-07-08 积水化学工业株式会社 等离子加工装置
EP2074645A2 (de) * 2006-10-03 2009-07-01 Dow Global Technologies Inc. Verbesserte atmosphärendruck-plasmaelektrode

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4614639A (en) * 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
US4812201A (en) * 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
DE4109619C1 (de) * 1991-03-23 1992-08-06 Leybold Ag, 6450 Hanau, De
US5376224A (en) * 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
US5372674A (en) * 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5298103A (en) * 1993-07-15 1994-03-29 Hughes Aircraft Company Electrode assembly useful in confined plasma assisted chemical etching

Also Published As

Publication number Publication date
KR960015760A (ko) 1996-05-22
DE69506209D1 (de) 1999-01-07
KR0165725B1 (ko) 1999-02-01
US5567255A (en) 1996-10-22
IL115601A0 (en) 1996-01-19
JPH08195386A (ja) 1996-07-30
EP0707337B1 (de) 1998-11-25
JP2723489B2 (ja) 1998-03-09
EP0707337A1 (de) 1996-04-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee