WO2014181665A1 - Élément de détection de rayon d'énergie à semi-conducteurs et procédé pour produire l'élément de détection de rayon d'énergie à semi-conducteurs - Google Patents
Élément de détection de rayon d'énergie à semi-conducteurs et procédé pour produire l'élément de détection de rayon d'énergie à semi-conducteurs Download PDFInfo
- Publication number
- WO2014181665A1 WO2014181665A1 PCT/JP2014/061065 JP2014061065W WO2014181665A1 WO 2014181665 A1 WO2014181665 A1 WO 2014181665A1 JP 2014061065 W JP2014061065 W JP 2014061065W WO 2014181665 A1 WO2014181665 A1 WO 2014181665A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- semiconductor layer
- region
- semiconductor substrate
- conductivity type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 454
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 82
- 238000001514 detection method Methods 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 42
- 238000002161 passivation Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 18
- 238000005520 cutting process Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
- H01L31/1185—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors of the shallow PN junction detector type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Abstract
L'invention consiste en la préparation d'un substrat à semi-conducteurs (1), ledit substrat à semi-conducteurs (1) comprenant une région de formation d'élément (2) et possédant des surfaces principales (1a, 1b) faisant face l'une à l'autre, et possédant une première couche de semi-conducteurs (3) qui est positionnée sur le côté de la surface principale (1a), une deuxième couche de semi-conducteurs (5) qui est positionnée sur le côté de la surface principale (1b) et qui possède une concentration d'impuretés plus élevée que la première couche de semi-conducteurs (3), et une région de semi-conducteurs (7) qui est positionnée dans la région de formation d'élément (2) sur le côté de la surface principale (1a) de la première couche de semi-conducteurs (3). Une tranchée (17), qui s'étend dans le sens de l'épaisseur du substrat de semi-conducteurs (1) depuis la surface principale (1a) et atteint la deuxième couche de semi-conducteurs (5), est formée par gravure, exposant les côtés (2a) de la région de formation d'élément (2). Un film (21) constitué de Al2O3 est formé de façon à couvrir au moins une surface de la première couche de semi-conducteurs (3), qui est exposée pour former les côtés (2a) de la région de formation d'élément (2). Le substrat à semi-conducteurs (1) est séparé au niveau de la région de formation d'élément (2).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-099137 | 2013-05-09 | ||
| JP2013099137A JP2014220403A (ja) | 2013-05-09 | 2013-05-09 | 半導体エネルギー線検出素子及び半導体エネルギー線検出素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2014181665A1 true WO2014181665A1 (fr) | 2014-11-13 |
Family
ID=51867147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2014/061065 WO2014181665A1 (fr) | 2013-05-09 | 2014-04-18 | Élément de détection de rayon d'énergie à semi-conducteurs et procédé pour produire l'élément de détection de rayon d'énergie à semi-conducteurs |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2014220403A (fr) |
| WO (1) | WO2014181665A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063127B2 (en) * | 2018-11-05 | 2021-07-13 | Rohm Co., Ltd. | Semiconductor element and semiconductor device provided with the same |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6962906B2 (ja) * | 2016-03-03 | 2021-11-05 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
| JP6244513B1 (ja) * | 2016-06-07 | 2017-12-06 | 雫石 誠 | 光電変換素子とその製造方法、分光分析装置 |
| JP6736374B2 (ja) | 2016-06-21 | 2020-08-05 | キヤノン株式会社 | 液体吐出ヘッド用半導体チップの製造方法 |
| JP6953246B2 (ja) | 2017-09-08 | 2021-10-27 | 浜松ホトニクス株式会社 | 半導体ウエハの製造方法、半導体エネルギー線検出素子の製造方法、及び半導体ウエハ |
| CN109451721B (zh) * | 2018-10-31 | 2020-07-07 | 广州小鹏汽车科技有限公司 | 贴片检测设备和方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536856U (ja) * | 1991-10-15 | 1993-05-18 | シヤープ株式会社 | 受光素子 |
| JPH08130324A (ja) * | 1994-10-31 | 1996-05-21 | Sharp Corp | 高耐圧プレーナ型受光素子 |
| JP2002314120A (ja) * | 2001-04-18 | 2002-10-25 | Hamamatsu Photonics Kk | ホトダイオード |
| JP2010239005A (ja) * | 2009-03-31 | 2010-10-21 | Kinki Univ | 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置 |
| JP2011138905A (ja) * | 2009-12-28 | 2011-07-14 | Toshiba Corp | 固体撮像装置 |
| WO2012117931A1 (fr) * | 2011-03-02 | 2012-09-07 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication, et instrument électronique |
| JP2014049514A (ja) * | 2012-08-30 | 2014-03-17 | Hamamatsu Photonics Kk | 側面入射型のフォトダイオードの製造方法、及び、半導体ウエハ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6677182B2 (en) * | 2000-04-20 | 2004-01-13 | Digirad Corporation | Technique for suppression of edge current in semiconductor devices |
-
2013
- 2013-05-09 JP JP2013099137A patent/JP2014220403A/ja active Pending
-
2014
- 2014-04-18 WO PCT/JP2014/061065 patent/WO2014181665A1/fr active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536856U (ja) * | 1991-10-15 | 1993-05-18 | シヤープ株式会社 | 受光素子 |
| JPH08130324A (ja) * | 1994-10-31 | 1996-05-21 | Sharp Corp | 高耐圧プレーナ型受光素子 |
| JP2002314120A (ja) * | 2001-04-18 | 2002-10-25 | Hamamatsu Photonics Kk | ホトダイオード |
| JP2010239005A (ja) * | 2009-03-31 | 2010-10-21 | Kinki Univ | 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置 |
| JP2011138905A (ja) * | 2009-12-28 | 2011-07-14 | Toshiba Corp | 固体撮像装置 |
| WO2012117931A1 (fr) * | 2011-03-02 | 2012-09-07 | ソニー株式会社 | Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication, et instrument électronique |
| JP2014049514A (ja) * | 2012-08-30 | 2014-03-17 | Hamamatsu Photonics Kk | 側面入射型のフォトダイオードの製造方法、及び、半導体ウエハ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11063127B2 (en) * | 2018-11-05 | 2021-07-13 | Rohm Co., Ltd. | Semiconductor element and semiconductor device provided with the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014220403A (ja) | 2014-11-20 |
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