JP6962906B2 - 半導体光検出素子 - Google Patents
半導体光検出素子 Download PDFInfo
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- JP6962906B2 JP6962906B2 JP2018503372A JP2018503372A JP6962906B2 JP 6962906 B2 JP6962906 B2 JP 6962906B2 JP 2018503372 A JP2018503372 A JP 2018503372A JP 2018503372 A JP2018503372 A JP 2018503372A JP 6962906 B2 JP6962906 B2 JP 6962906B2
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- 239000004065 semiconductor Substances 0.000 title claims description 285
- 239000000758 substrate Substances 0.000 claims description 130
- 230000035945 sensitivity Effects 0.000 claims description 54
- 230000003595 spectral effect Effects 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- 238000009825 accumulation Methods 0.000 claims description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 23
- 230000006866 deterioration Effects 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000002041 carbon nanotube Substances 0.000 description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
図1及び図2を参照して、第1実施形態に係る半導体光検出素子SP1の構成を説明する。図1は、第1実施形態に係る半導体光検出素子を示す斜視図である。図2は、第1実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図8を参照して、第2実施形態に係る半導体光検出素子SP2の構成を説明する。図8は、第2実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図9を参照して、第3実施形態に係る半導体光検出素子SP3の構成を説明する。図9は、第3実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図10を参照して、第4実施形態に係る半導体光検出素子SP4の構成を説明する。図10は、第4実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図11を参照して、第5実施形態に係る半導体光検出素子SP5の構成を説明する。図11は、第5実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図12を参照して、第6実施形態に係る半導体光検出素子SP6の構成を説明する。図12は、第6実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図13を参照して、第7実施形態に係る半導体光検出素子SP7の構成を説明する。図13は、第7実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図14を参照して、第8実施形態に係る半導体光検出素子SP8の構成を説明する。図14は、第8実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図15を参照して、第9実施形態に係る半導体光検出素子SP9の構成を説明する。図15は、第9実施形態に係る半導体光検出素子の断面構成を説明するための図である。
図16を参照して、第10実施形態に係る半導体光検出素子SP10の構成を説明する。図16は、第10実施形態に係る半導体光検出素子の断面構成を説明するための図である。
Claims (7)
- 半導体光検出素子であって、
光入射面と前記光入射面に対向する裏面とを有していると共に、入射光に応じてキャリアが発生するシリコン基板と、
前記光入射面上に配置されており、前記入射光を透過させる酸化物膜と、
前記酸化物膜上に配置されており、前記入射光を透過させると共に所定の電位に接続される電極膜と、を備え、
前記光入射面には、前記シリコン基板の厚み方向に対して傾斜した斜面を有する複数の凸部が形成されており、
前記凸部では、前記斜面として、前記シリコン基板の(111)面が露出し、
前記凸部の高さが、200nm以上であり、
前記シリコン基板の前記裏面側には、前記シリコン基板と異なる導電型を有する半導体領域が設けられ、
前記シリコン基板の前記光入射面側には、アキュムレーション層が設けられており、
前記凸部の斜面が、前記アキュムレーション層の表面に含まれている。 - 請求項1に記載の半導体光検出素子であって、
前記電極膜が、グラフェンからなる膜である。 - 請求項1又は2に記載の半導体光検出素子であって、
前記酸化物膜が、酸化シリコン膜である。 - 請求項1又は2に記載の半導体光検出素子であって、
前記酸化物膜が、酸化アルミニウム膜である。 - 請求項1〜4のいずれか一項に記載の半導体光検出素子であって、
前記光入射面上に配置されており、前記入射光を透過させると共にホウ素を含む膜を更に備えている。 - 請求項1に記載の半導体光検出素子であって、
前記複数の凸部のうち、隣り合う二つの凸部の頂点の間隔は、500〜3000nmである。 - 請求項1に記載の半導体光検出素子であって、
紫外及び近赤外の波長帯域での分光感度特性が高められている。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016041027 | 2016-03-03 | ||
JP2016041027 | 2016-03-03 | ||
PCT/JP2017/008120 WO2017150616A1 (ja) | 2016-03-03 | 2017-03-01 | 半導体光検出素子 |
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JPWO2017150616A1 JPWO2017150616A1 (ja) | 2018-12-27 |
JP6962906B2 true JP6962906B2 (ja) | 2021-11-05 |
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US (2) | US10529772B2 (ja) |
EP (1) | EP3425683A4 (ja) |
JP (1) | JP6962906B2 (ja) |
KR (1) | KR102363563B1 (ja) |
CN (1) | CN108886070B (ja) |
TW (2) | TWI717474B (ja) |
WO (1) | WO2017150616A1 (ja) |
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EP3425683A4 (en) * | 2016-03-03 | 2019-09-25 | Hamamatsu Photonics K.K. | SEMICONDUCTOR LIGHT DETECTION ELEMENT |
CN110148642A (zh) * | 2019-06-21 | 2019-08-20 | 广西师范大学 | 凹面阵列的石墨烯-金属异质结光电探测器 |
JP2021100058A (ja) * | 2019-12-23 | 2021-07-01 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2021100057A (ja) * | 2019-12-23 | 2021-07-01 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
US11652114B2 (en) * | 2020-12-10 | 2023-05-16 | Coherent AI (Hong Kong) Limited | Optimal photon management for CMOS sensors |
CN114242802A (zh) * | 2021-12-17 | 2022-03-25 | 江苏尚飞光电科技股份有限公司 | 一种背照式光电探测器及其阵列 |
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JPS6411556U (ja) * | 1987-07-08 | 1989-01-20 | ||
JPH05190887A (ja) * | 1992-01-13 | 1993-07-30 | Hamamatsu Photonics Kk | 光電変換装置 |
JP2000106453A (ja) * | 1998-09-29 | 2000-04-11 | Hitachi Ltd | 半導体装置 |
JP4220819B2 (ja) * | 2003-03-27 | 2009-02-04 | 浜松ホトニクス株式会社 | 放射線検出器 |
JP4442157B2 (ja) * | 2003-08-20 | 2010-03-31 | ソニー株式会社 | 光電変換装置及び固体撮像装置 |
CN100370527C (zh) * | 2004-11-06 | 2008-02-20 | 鸿富锦精密工业(深圳)有限公司 | 半导体激光装置及采用该半导体激光装置的光学拾取装置 |
JP5185205B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
KR101154347B1 (ko) * | 2009-08-24 | 2012-06-13 | 한양대학교 산학협력단 | 그래핀 박막과 나노 입자를 이용한 광검출기 및 그 제조 방법 |
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JP2014220403A (ja) * | 2013-05-09 | 2014-11-20 | 浜松ホトニクス株式会社 | 半導体エネルギー線検出素子及び半導体エネルギー線検出素子の製造方法 |
JP6170379B2 (ja) * | 2013-08-30 | 2017-07-26 | 浜松ホトニクス株式会社 | 半導体エネルギー線検出素子 |
US9748294B2 (en) * | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
JP6405368B2 (ja) * | 2014-04-25 | 2018-10-17 | 浜松ホトニクス株式会社 | 光学式センサ |
EP3425683A4 (en) * | 2016-03-03 | 2019-09-25 | Hamamatsu Photonics K.K. | SEMICONDUCTOR LIGHT DETECTION ELEMENT |
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- 2017-03-01 CN CN201780014762.9A patent/CN108886070B/zh active Active
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KR20180119628A (ko) | 2018-11-02 |
CN108886070A (zh) | 2018-11-23 |
US20200043974A1 (en) | 2020-02-06 |
EP3425683A1 (en) | 2019-01-09 |
JPWO2017150616A1 (ja) | 2018-12-27 |
CN108886070B (zh) | 2022-06-17 |
EP3425683A4 (en) | 2019-09-25 |
KR102363563B1 (ko) | 2022-02-17 |
TWI717474B (zh) | 2021-02-01 |
US20190035843A1 (en) | 2019-01-31 |
TWI731811B (zh) | 2021-06-21 |
US10529772B2 (en) | 2020-01-07 |
WO2017150616A1 (ja) | 2017-09-08 |
TW201801340A (zh) | 2018-01-01 |
TW202111966A (zh) | 2021-03-16 |
US10930700B2 (en) | 2021-02-23 |
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