CN110311008B - 光检测装置及光检测测距装置 - Google Patents

光检测装置及光检测测距装置 Download PDF

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CN110311008B
CN110311008B CN201811274233.5A CN201811274233A CN110311008B CN 110311008 B CN110311008 B CN 110311008B CN 201811274233 A CN201811274233 A CN 201811274233A CN 110311008 B CN110311008 B CN 110311008B
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国分弘一
松本展
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Abstract

本公开提供光检测效率高的光检测装置。光检测装置具备：设置于半导体基板的第1主表面上的第1导电型的硅层；第1半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高；第2半导体层，设置于所述第1半导体层上，是第2导电型，与所述第1半导体层形成pn边界；第3半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高，与所述第1半导体层分隔开；连接于所述硅层的第1电极；以及连接于所述第2半导体层的第2电极。

Description

光检测装置及光检测测距装置
本申请享有以日本专利申请2018-053353号(申请日：2018年3月20日)为在先申请的优先权。本申请通过参照该在先申请而包括该在先申请的全部内容。
技术领域
实施方式涉及光检测装置以及光检测测距装置。
背景技术
近些年，作为实现自动驾驶的装置之一，开发了车载用LIDAR(Light Detectionand Ranging：光检测测距装置)。车载用LIDAR由使红外线激光振荡的激光振荡器、扫描红外线激光的扫描光学系统、检测从目标物反射后的红外线的光检测装置以及控制电路等构成。由此，能够识别位于远距离的目标物的形状和/或距离。作为光检测装置，能够使用SiPM(Silicon Photomultiplier：硅光电倍增管)。但是，由于硅的红外线吸收率低，因此期望提高SiPM中的PDE(Photon Detection Efficiency：光检测效率)。
发明内容
发明要解决的课题
实施方式的目的在于提供光检测效率高的光检测装置。
用于解决课题的技术方案
实施方式涉及的光检测装置具备：硅层，设置于半导体基板的第1主表面上，是第1导电型；第1半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高；第2半导体层，设置于所述第1半导体层上，是第2导电型，与所述第1半导体层形成pn边界；第3半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高，与所述第1半导体层分隔开；连接于所述硅层的第1电极；以及连接于所述第2半导体层的第2电极。
根据上述结构的光检测装置，能够提高光检测效率。
附图说明
图1是表示第1实施方式涉及的光检测装置的俯视图。
图2是表示图1的区域A的俯视图。
图3是由图2所示的B-B’线切割而得的截面图。
图4是表示第1实施方式涉及的光检测装置的电路图。
图5是表示第1实施方式涉及的光检测装置的工作的图。
图6是表示第1实施方式涉及的光检测装置的有效区域的图。
图7是横轴为外围p+型层的杂质浓度、纵轴为光检测效率(PDE)的表示外围p+型层的杂质浓度对光检测效率产生的影响的曲线图。
图8是表示第1实施方式的变形例涉及的光检测装置的截面图。
图9是表示比较例涉及的光检测装置的截面图。
图10是表示第2实施方式涉及的光检测装置的截面图。
图11是表示第3实施方式涉及的光检测装置的截面图。
图12是表示第4实施方式涉及的光检测装置的截面图。
图13是表示第5实施方式涉及的光检测装置的截面图。
附图标记的说明
1、1a、2、3、4、5：光检测装置；11：SiPM元件；20：硅基板；21：外延层；21a、21b：部分；22：p+型层；22a：孔；23：n+型层；24：pn边界；25：二极管；26：外围p+型层；27：外围绝缘层；28：外围绝缘构件；28a：上表面；28b：下表面；29：外围导电层；30：LOCOS膜；31、32：电极膜；33：电阻元件；40：耗尽层；45：有效区域；101：光检测装置；e-：电子；h+：空穴；p：光子。
具体实施方式
(第1实施方式)
首先，对第1实施方式进行说明。
图1是表示本实施方式涉及的光检测装置的俯视图。
图2是表示图1的区域A的俯视图。
图3是由图2所示的B-B’线切割而得的截面图。
图4是表示本实施方式涉及的光检测装置的电路图。
此外，各图都是示意图，各构成要素被适当简略化或省略。关于后述的图也同样。
如图1所示，在本实施方式涉及的光检测装置1中，多个SiPM元件11排列成矩阵状。在光检测装置1中，例如，48个SiPM元件11排列成6行8列。光检测装置1通过半导体工艺形成。
如图2以及图3所示，在光检测装置1中设置有硅基板20。硅基板20例如由单晶硅(Si)形成。在硅基板20上设置有由硅形成的外延层21。外延层21是硅以硅基板20的上表面作为起点进行外延生长而形成的，导电型是p型。
在外延层21上的一部分设置有例如LOCOS(Local Oxidation of Silicon，硅的局部氧化)膜、STI(Shallow Trench Isolation，浅沟槽隔离)或DTI(Deep TrenchIsolation，深沟槽隔离)30。以下，为了使说明简洁，统称记为“LOCOS膜30”。从上方即从硅基板20朝向外延层21的方向观察，LOCOS膜30的形状为格子状。在由格子状的LOCOS膜30划分出的各区域形成有各SiPM元件11。
在各SiPM元件11中，在外延层21的上层部分内设置有p+型层22。p+型层22的导电型是p型，作为其载流子的杂质的浓度(以下，也简称为“杂质浓度”)，比外延层21中的杂质浓度高。p+型层22的杂质浓度例如为4.5×1016cm-3以上。
在p+型层22上设置有n+型层23。n+型层23的导电型是n型。n+型层23与p+型层22接触，形成了pn边界24。n+型层23的杂质浓度例如为1×1018cm-3以上。通过p+型层22以及n+型层23形成了二极管25。从上方观察，n+型层23的外缘位于p+型层22的外缘的外侧。p+型层22以及n+型层23按各SiPM元件11设置，通过LOCOS膜30与相邻的SiPM元件11的p+型层22以及n+型层23分离。
并且，在外延层21内的包含LOCOS膜30的正下区域的区域，设置有外围p+型层26。从上方观察，外围p+型层26的形状是与LOCOS膜30相同或大一圈(在图3的水平方向上进一步延伸)的格子状。外围p+型层26的导电型是p型，其杂质浓度比外延层21中的杂质浓度高。例如，外围p+型层26中的杂质浓度为外延层21的杂质浓度的10倍以上。例如，外延层21中的杂质浓度为1×1013～1×1016cm-3，例如，为3×1015cm-3以下。外围p+型层26的杂质浓度为1×1015cm-3以上。
外围p+型层26配置在p+型层22与硅基板20之间，与p+型层22分隔开。外延层21的部分21a存在于外围p+型层26与p+型层22之间。由于杂质从外围p+型层26以及p+型层22向部分21a扩散，因此部分21a的杂质浓度比外延层21的平均杂质浓度高但比外围p+型层26的杂质浓度的一半低。另外，从上方观察，外围p+型层26包围p+型层22，但是外围p+型层26的端部也可以与p+型层22的端部重叠。重叠的部分的宽度例如为0～1μm。另外，在外围p+型层26包围p+型层22的情况下，它们的间隔例如为0～1μm。
在硅基板20的下表面上设置有电极膜31。电极膜31例如由金属材料形成。电极膜31的上表面与硅基板20的下表面接触。因此，电极膜31经由硅基板20连接于外延层21。
在外延层21的上表面上设置有电极膜32。电极膜32例如由ITO(Indium-Tin-Oxide：掺锡氧化铟)等导电性透明材料形成。电极膜32的下表面与外延层21的上表面接触。因此，电极膜32经由外延层21的最上层部分连接于n+型层23。电极膜32图案化成预定形状。另外，如图4所示，在LOCOS膜30上设置有例如由多晶硅形成的电阻元件33。电阻元件33连接于电极膜32。
由此，如图4所示，在光检测装置1中，在电极膜31与电极膜32之间并联地连接有多个SiPM元件11。在各SiPM元件11中，串联地连接有二极管25以及电阻元件33。
接着，对本实施方式涉及的光检测装置的工作进行说明。
图5是表示本实施方式涉及的光检测装置的工作的图。
图6是表示本实施方式涉及的光检测装置的有效区域的图。
图7是横轴为外围p+型层的杂质浓度、纵轴为光检测效率(PDE)的表示外围p+型层的杂质浓度对光检测效率产生的影响的曲线图。
如图5以及图6所示，向电极膜31与电极膜32之间施加电极膜31成为负极、电极膜32成为正极那样的电压。由此，耗尽层40以pn边界24为起点向上下扩展。耗尽层40到达n+型层23内以及外延层21内。由此，形成夹着耗尽层40的寄生电容器，存储电荷。
如图5的箭头41所示，在该状态下向某SiPM元件11入射红外线的光子p。由此，如箭头42所示，在外延层21内产生电子e-和空穴h+对。存在该对产生位置位于耗尽层40内的情况，也存在位于耗尽层40外的情况。在耗尽层40内产生的电子e-和空穴h+对中的电子e-，如箭头43所示，通过由电极膜31和电极膜32形成的电场，朝向电极膜32前进，到达pn边界24。另一方面，在耗尽层40外产生的电子e-和空穴h+对中的电子e-通过扩散移动到耗尽层40内，之后通过电场移动，到达pn边界24。由此，在pn边界24发生雪崩击穿，二极管25成为导通状态，如箭头44所示，存储于寄生电容器的电荷在电极膜31与电极膜32之间导通。由于电荷流动，在电阻元件33中产生电压下降，二极管25再次返回非导通状态。通过检测此时流动的电流，来检测光子p的入射。
各SiPM元件11与1个光子p发生反应而使雪崩电流流动，因此能够检测1个光子p。一旦流过雪崩电流的SiPM元件11基本上在再充电之前会无法使用，但对周围的SiPM元件11不产生影响。由于在光检测装置1设置有多个例如48个SiPM元件11，因此能够一次连续地检测多个光子。
此外，由于各SiPM元件11无法检测红外线的入射角度，因此光检测装置1自身没有空间分辨率。但是，例如通过使多个光检测装置1排列成1列，并设置适当的光学系统，能够实现一维的空间分辨率。另外，通过利用扫描光学系统(未图示)扫描红外线激光，能够实现二维的空间分辨率。进一步，通过计测从使红外线激光振荡起到进行检测为止的时间差，能够实现三维的空间分辨率。此外，通过使多个光检测装置1二维地排列而实现二维的空间分辨率，并计测时间差，也能够实现三维的空间分辨率。
并且，如图6所示，由于在本实施方式涉及的光检测装置1中设置有外围p+型层26，因此能够捕获光子p的有效区域45大。有效区域45是指光子p与硅原子碰撞而产生电子e-和空穴h+对的位置且所产生的电子e-到达pn边界24而产生雪崩击穿的位置的集合。在有效区域45的外侧即便光子p产生电子e-和空穴h+对，所产生的电子e-也不到达pn边界24，因此也不发生雪崩击穿，该光子p不被检测。因此，在各SiPM元件11中有效区域45越大，则PDE(光检测效率)越高。
作为通过设置有外围p+型层26而有效区域45会变大的理由，可以考虑以下的理由。
第一，由于外围p+型层26对于电子e-成为势垒，因此电子e-会在外围p+型层26中多次流动，会更容易到达发生雪崩击穿的pn边界24。
第二，由于外围p+型层26抑制耗尽层40的扩展，因此在LOCOS膜30的正下区域、即SiPM元件11的外围部，耗尽层40会更小，电子e-经由耗尽层40穿通到SiPM元件11的外围部的概率降低。
第三，由于外延层21与外围p+型层26的空穴的浓度差的原因，产生从外延层21朝向外围p+型层26的电场，因此通过pn边界24的电力线向外侧扩展。由于电子e-沿着电力线流动，因此若通过pn边界24的电力线向外侧扩展，则在SiPM元件11的外围部产生的电子会更容易到达pn边界24。
另外，在本实施方式中，由于使外围p+型层26的杂质浓度为外延层21的杂质浓度的10倍以上，因此能够可靠地得到上述效果。
如图7所示，模拟的结果，在使外延层21的杂质浓度为1×1014cm-3时，若外围p+型层26的杂质浓度为1×1015cm-3以上即外延层21的杂质浓度的10倍以上，则光检测效率会显著地提高。
接着，对本实施方式的效果进行说明。
根据本实施方式，通过在SiPM元件11的外围部分，在外延层21内设置外围p+型层26，由此能够扩大可捕获光子p的有效区域45，能够使光检测效率提高。尤其是，从上方观察，外围p+型层26的端部与p+型层22的端部重叠或者外围p+型层26的端部靠近p+型层22的端部，由此能够高效地将电子向pn边界24诱导。结果，各SiPM元件11的光检测效率高，因此能够实现整体的光检测效率高的光检测装置。
另外，在缩短耗尽层40的延伸距离，使光子p的一部分在耗尽层40的外侧与硅原子进行碰撞而产生电子e-和空穴h+对的情况下，电子e-通过扩散在外延层21内移动。在该情况下，通过外围p+型层26改变电子的流动的效果变为平缓，控制会更加容易。
(第1实施方式的变形例)
接着，对第1实施方式的变形例进行说明。
图8是表示本变形例涉及的光检测装置的截面图。
如图8所示，在本实施方式涉及的光检测装置1a中，外围p+型层26位于与p+型层22大致相同的深度。外围p+型层26与p+型层22分隔开。外围p+型层26的杂质浓度为外延层21的杂质浓度的10倍以上。
根据本变形例，与前述的第1实施方式(参照图6)同样地，能够扩大可捕获光子p的有效区域45，能够使光检测效率提高。
本变形例中的上述以外的构成、工作以及效果，与前述的第1实施方式同样。
(比较例)
接着，对比较例进行说明。
图9是表示本比较例涉及的光检测装置的截面图。
如图9所示，在本比较例涉及的光检测装置101中，没有设置外围p+型层26(参照图3)。因此，有效区域45更小，光检测效率低。可以认为其原因是：由于耗尽层40在比SiPM元件11的中央部靠外围部更向下方伸展，因此产生好像电子被该耗尽层40吸引那样的流动而向外围流动。此外，图6以及图9所示的有效区域45以及耗尽层40的形状，通过描绘模拟结果而得到。关于后述的图也同样。
(第2实施方式)
接着，对第2实施方式进行说明。
图10是表示本实施方式涉及的光检测装置的截面图。
如图10所示，本实施方式涉及的光检测装置2与前述的第1实施方式涉及的光检测装置1(参照图3)进行比较，在取代外围p+型层26而设置有外围绝缘层27的点上不同。外围绝缘层27例如由硅氧化物(SiO)形成，从上方观察的形状是与LOCOS膜30同样或大一圈的格子状。另外，外围绝缘层27配置于比LOCOS膜30以及p+型层22靠下方，与LOCOS膜30以及p+型层22分隔开。
在本实施方式中，也能够通过由外围绝缘层27阻止电子的移动以及妨碍耗尽层40(参照图5)的扩展，来扩大有效区域45。结果，光检测装置2的光检测效率高。
本实施方式中的上述以外的结构、工作以及效果与前述的第1实施方式同样。
(第3实施方式)
接着，对第3实施方式进行说明。
图11是表示本实施方式涉及的光检测装置的截面图。
如图11所示，在本实施方式涉及的光检测装置3中，与前述的第2实施方式涉及的光检测装置2(参照图10)进行比较，在取代LOCOS膜30以及外围绝缘层27而设置有外围绝缘构件28的点上不同。
外围绝缘构件28例如由硅氧化物形成。从上方观察，外围绝缘构件28的形状是格子状，在被外围绝缘构件28包围的区域形成有SiPM元件11。外围绝缘构件28与p+型层22分隔开。外围绝缘构件28中的配置于比p+型层22靠下方的部分的端部，从上方观察与p+型层22的端部重叠。外围绝缘构件28的上表面28a位于比外延层21的上表面靠上方，下表面28b以越朝向SiPM元件11的内侧即p+型层22的中央部的正下区域变为越高的方式倾斜地向上突出。
根据本实施方式，由于外围绝缘构件28的下表面28b以越朝向SiPM元件11的内侧变为越高的方式倾斜，因此能够朝向pn边界24诱导电子的流动。由此，有效区域45进一步扩大，光检测效率进一步提高。
本实施方式中的上述以外的结构、工作以及效果与前述的第2实施方式同样。
(第4实施方式)
接着，对第4实施方式进行说明。
图12是表示本实施方式涉及的光检测装置的截面图。
如图12所示，本实施方式涉及的光检测装置4与前述的第1实施方式涉及的光检测装置1(参照图3)进行比较，在取代外围p+型层26而设置有外围导电层29的点上不同。外围导电层29由导电性材料例如金属材料如铝(Al)形成，从上方观察的形状是与LOCOS膜30相同或大一圈的格子状。另外，外围导电层29配置于比LOCOS膜30以及p+型层22靠下方，与LOCOS膜30以及p+型层22分隔开。外围导电层29是浮置电位(floating potential)。
在本实施方式中，外围导电层29除了阻止电子的移动以及妨碍耗尽层40(参照图5)的扩展之外，外围导电层29还吸引电力线，由此能够扩大有效区域45。结果能够使光检测装置4的光检测效率提高。
本实施方式中的上述以外的结构、工作以及效果与前述的第1实施方式同样。
(第5实施方式)
接着，对第5实施方式进行说明。
图13是表示本实施方式涉及的光检测装置的截面图。
如图13所示，本实施方式涉及的光检测装置5与前述的第1实施方式涉及的光检测装置1(参照图3)进行比较，在未设置外围p+型层26的点上以及从上方观察在p+型层22的中央部形成有孔22a的点上不同。孔22a在上下方向上贯通p+型层22。外延层21的部分21b进入孔22a内。由于杂质从p+型层22向部分21b扩散，因此部分21b的杂质浓度比外延层21的平均杂质浓度高，但比p+型层22的杂质浓度低。
在本实施方式中，通过在p+型层22的中央部形成孔22a，能够在SiPM元件11的中央部，使耗尽层40向下方更大地延伸。由此电子会经由耗尽层40更容易到达pn边界24。结果光检测效率提高。
本实施方式中的上述以外的结构、工作以及效果与前述的第1实施方式同样。
此外，在p+型层22不形成孔22a，在p+型层22的中央部附近仅使杂质浓度稍微降低，也能够在某程度上获得上述效果。
另外，本实施方式也可以与上述的各实施方式进行组合来实施。例如，也可以在p+型层22形成孔22a，并且如第1实施方式或其变形例那样设置外围p+型层26(参照图3、图8)，也可以如第2实施方式那样设置外围绝缘层27(参照图10)，也可以如第3实施方式那样设置外围绝缘构件28(参照图11)，也可以如第4实施方式那样设置外围导电层29(参照图12)。
另外，在上述的各实施方式中，也可以使各部分的导电型相反。在该情况下，空穴成为引起雪崩击穿的载流子。但是，在将电子作为载流子的情况下效率高。
根据以上说明的实施方式，能够实现光检测效率更高的光检测装置。另外，根据由使红外线激光振荡的激光振荡器、扫描红外线激光的扫描光学系统、检测从目标物反射后的红外线的在上述各实施方式中说明的光检测装置以及控制电路等构成的光检测测距装置，能够更高精度地识别位于远距离的目标物的形状和/或距离。
以上，对本发明的几个实施方式进行了说明，但这些实施方式都是作为例子提示的，并不旨在限定发明的范围。这些新的实施方式能够以其他各种方式实施，在不脱离发明主旨的范围内能够进行各种省略、置换、变更。这些实施方式和/或其变形，包含于发明的范围和/或主旨，并且包含于权利要求书所记载的发明及其等同物的范围内。另外，前述实施方式也能够相互进行组合来实施。

Claims (6)

1.一种光检测装置，具备：
硅层，设置于半导体基板的第1主表面上，是第1导电型；
第1半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高；
第2半导体层，设置于所述第1半导体层上，是第2导电型，与所述第1半导体层形成pn边界；
第3半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高，与所述第1半导体层分隔开；
电连接于所述硅层的第1电极；以及
设置于所述第2半导体层之上，电连接于所述第2半导体层的第2电极，
所述第3半导体层配置于所述第1半导体层与所述半导体基板之间，不与所述第1电极以及所述第2电极电连接，
所述第3半导体层，设置于外围区域，在与所述pn边界的边界面垂直的方向上进行俯视的情况下，所述第3半导体层包围所述第1半导体层，并且，所述第3半导体层的端部与所述第1半导体层的端部重叠或者所述第3半导体层的端部靠近所述第1半导体层的端部。
2.根据权利要求1所述的光检测装置，
所述第3半导体层的杂质浓度至少为所述硅层的杂质浓度的10倍以上。
3.一种光检测装置，具备：
第1导电型的硅层，设置于半导体基板的第1主表面上；
第1半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高；
第2半导体层，设置于所述第1半导体层上，是第2导电型，与所述第1半导体层形成pn边界；
绝缘层，设置于所述硅层内，与所述第1半导体层分隔开；
电连接于所述硅层的第1电极；以及
设置于所述第2半导体层之上，电连接于所述第2半导体层的第2电极，
所述绝缘层配置于所述第1半导体层与所述半导体基板之间，
所述绝缘层，设置于外围区域，在与所述pn边界的边界面垂直的方向上进行俯视的情况下，所述绝缘层包围所述第1半导体层，并且，所述绝缘层的端部与所述第1半导体层的端部重叠或者所述绝缘层的端部靠近所述第1半导体层的端部。
4.根据权利要求3所述的光检测装置，
所述绝缘层的下表面越朝向所述第1半导体层的中央部的正下区域越倾斜地向上突出。
5.一种光检测装置，具备：
第1导电型的硅层，设置于半导体基板的第1主表面上；
第1半导体层，设置于所述硅层内，是第1导电型，杂质浓度比所述硅层的杂质浓度高；
第2半导体层，设置于所述第1半导体层上，是第2导电型，与所述第1半导体层形成pn边界；
导电层，设置于所述硅层内，与所述第1半导体层分隔开；
电连接于所述硅层的第1电极；以及
设置于所述第2半导体层之上，电连接于所述第2半导体层的第2电极，
所述导电层配置于所述第1半导体层与所述半导体基板之间，不与所述第1电极以及所述第2电极电连接，
所述导电层，设置于外围区域，在与所述pn边界的边界面垂直的方向上进行俯视的情况下，所述导电层包围所述第1半导体层，并且，所述导电层的端部与所述第1半导体层的端部重叠或者所述导电层的端部靠近所述第1半导体层的端部。
6.一种光检测测距装置，具备：
权利要求1所述的光检测装置；
使红外线激光振荡的激光振荡器；以及
扫描装置，扫描所述红外线激光，向所述光检测装置照射。
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JP7337517B2 (ja) 2019-03-14 2023-09-04 株式会社東芝 光検出器及び距離測定装置
JP7178613B2 (ja) * 2019-03-29 2022-11-28 パナソニックＩｐマネジメント株式会社 光検出器
US11527670B2 (en) 2020-02-13 2022-12-13 Infineon Technologies Dresden GmbH & Co. KG Photon avalanche diode and methods of producing thereof
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Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7709618A (nl) * 1977-09-01 1979-03-05 Philips Nv Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
IT1172887B (it) * 1978-04-14 1987-06-18 Cselt Centro Studi Lab Telecom Foto rivelatore a valanga ad alta responsivita' e procedimento per la sua realizzazione
JPH0774385A (ja) * 1993-09-03 1995-03-17 Hamamatsu Photonics Kk 静電誘導型アバランシェフォトダイオード
JP4077063B2 (ja) 1997-05-27 2008-04-16 浜松ホトニクス株式会社 ＢｉＣＭＯＳ内蔵受光半導体装置
JPH1146010A (ja) 1997-05-27 1999-02-16 Hamamatsu Photonics Kk アバランシェフォトダイオード
AU2185499A (en) 1998-01-30 1999-08-16 Hamamatsu Photonics K.K. Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode
US6541836B2 (en) 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
DE60112726T2 (de) 2001-05-15 2006-06-14 St Microelectronics Srl Halbleiter-Photodetektor mit hoher Verstärkung und Herstellungsverfahren
JP4131191B2 (ja) 2003-04-11 2008-08-13 日本ビクター株式会社 アバランシェ・フォトダイオード
JP4841834B2 (ja) 2004-12-24 2011-12-21 浜松ホトニクス株式会社 ホトダイオードアレイ
US7262402B2 (en) * 2005-02-14 2007-08-28 Ecole Polytechnique Federal De Lausanne Integrated imager circuit comprising a monolithic array of single photon avalanche diodes
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7667400B1 (en) * 2006-06-09 2010-02-23 Array Optronix, Inc. Back-illuminated Si photomultipliers: structure and fabrication methods
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
IT1393781B1 (it) 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
GB2485400B (en) 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
US8884213B2 (en) * 2011-07-06 2014-11-11 Siemens Medical Solutions Usa, Inc. Energy correction for one-to-one coupled radiation detectors having non-linear sensors
EP2747154B1 (en) * 2012-12-21 2020-04-01 ams AG Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
US9160949B2 (en) 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
EP2987186B1 (en) * 2013-04-19 2020-07-01 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
ITTO20130398A1 (it) 2013-05-16 2014-11-17 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger includente una struttura di confinamento elettro-ottico per la riduzione dell'interferenza, e schiera di fotodiodi
JP6090060B2 (ja) 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
US9466631B2 (en) * 2014-05-13 2016-10-11 Stmicroelectronics S.R.L. Solid state photomultipliers array of enhanced fill factor and simplified packaging
CN104882510B (zh) * 2015-06-04 2017-01-11 镇江镓芯光电科技有限公司 一种新型小倾角半台面结构的碳化硅雪崩光电二极管
JP6738129B2 (ja) 2015-07-28 2020-08-12 株式会社東芝 光検出器およびこれを用いたライダー装置
FR3041817B1 (fr) 2015-09-30 2017-10-13 Commissariat Energie Atomique Photodiode de type spad
JP6730820B2 (ja) 2016-03-10 2020-07-29 株式会社東芝 光検出器およびこれを用いたライダー装置
JP7058479B2 (ja) 2016-10-18 2022-04-22 ソニーセミコンダクタソリューションズ株式会社 光検出器

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