JP7343555B2 - 光検出装置 - Google Patents
光検出装置 Download PDFInfo
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- JP7343555B2 JP7343555B2 JP2021128916A JP2021128916A JP7343555B2 JP 7343555 B2 JP7343555 B2 JP 7343555B2 JP 2021128916 A JP2021128916 A JP 2021128916A JP 2021128916 A JP2021128916 A JP 2021128916A JP 7343555 B2 JP7343555 B2 JP 7343555B2
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- 238000001514 detection method Methods 0.000 title description 4
- 239000012535 impurity Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000007769 metal material Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 description 65
- 230000000694 effects Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Description
先ず、第1の実施形態について説明する。
図1は、本実施形態に係る光検出装置を示す平面図である。
図2は、図1の領域Aを示す平面図である。
図3は、図2に示すB-B’線による断面図である。
図4は、本実施形態に係る光検出装置を示す回路図である。
なお、各図は模式的なものであり、各構成要素は適宜簡略化又は省略されている。後述する図についても同様である。
図5は、本実施形態に係る光検出装置の動作を示す図である。
図6は、本実施形態に係る光検出装置の有効領域を示す図である。
図7は、横軸に周辺p+形層の不純物濃度をとり、縦軸に光検出効率(PDE)をとって、周辺p+形層の不純物濃度が光検出効率に及ぼす影響を示すグラフ図である。
第1に、周辺p+形層26が電子e-に対して障壁となるため、電子e-は周辺p+形層26を迂回して流れることになり、アバランシェ崩壊が発生するpn境界24に到達しやすくなる。
第2に、周辺p+形層26が空乏層40の伸張を抑えるため、LOCOS膜30の直下域、すなわち、SiPM素子11の周辺部において空乏層40が小さくなり、電子e-が空乏層40を介してSiPM素子11の周辺部に抜ける確率が低減する。
第3に、エピタキシャル層21と周辺p+形層26との正孔の濃度差に起因して、エピタキシャル層21から周辺p+形層26に向かう電界が発生するため、pn境界24を通過する電気力線が外側に拡がる。電子e-は電気力線に沿って流れるため、pn境界24を通過する電気力線が外側に拡がると、SiPM素子11の周辺部で発生した電子がpn境界24に到達しやすくなる。
図7に示すように、シミュレーションの結果、エピタキシャル層21の不純物濃度を1×1014cm-3としたとき、周辺p+形層26の不純物濃度が1×1015cm-3以上、すなわち、エピタキシャル層21の不純物濃度の10倍以上であると、光検出効率が顕著に向上した。
本実施形態によれば、SiPM素子11の周辺部分において、エピタキシャル層21内に周辺p+形層26を設けることにより、光子pを捕獲できる有効領域45を拡大し、光検出効率を向上させることができる。特に、上方から見て、周辺p+形層26の端部がp+形層22の端部と重なっている、あるいは周辺p+形層26の端部がp+形層22の端部と近いことにより、電子を効率よくpn境界24に誘導することができる。この結果、各SiPM素子11の光検出効率が高く、従って、全体の光検出効率が高い光検出装置を実現することができる。
次に、第1の実施形態の変形例について説明する。
図8は、本変形例に係る光検出装置を示す断面図である。
本変形例における上記以外の構成、動作及び効果は、前述の第1の実施形態と同様である。
次に、比較例について説明する。
図9は、本比較例に係る光検出装置を示す断面図である。
次に、第2の実施形態について説明する。
図10は、本実施形態に係る光検出装置を示す断面図である。
本実施形態における上記以外の構成、動作及び効果は、前述の第1の実施形態と同様である。
次に、第3の実施形態について説明する。
図11は、本実施形態に係る光検出装置を示す断面図である。
本実施形態における上記以外の構成、動作及び効果は、前述の第2の実施形態と同様である。
次に、第4の実施形態について説明する。
図12は、本実施形態に係る光検出装置を示す断面図である。
本実施形態における上記以外の構成、動作及び効果は、前述の第1の実施形態と同様である。
次に、第5の実施形態について説明する。
図13は、本実施形態に係る光検出装置を示す断面図である。
本実施形態における上記以外の構成、動作及び効果は、前述の第1の実施形態と同様である。
11:SiPM素子
20:シリコン基板
21:エピタキシャル層
21a、21b:部分
22:p+形層
22a:穴
23:n+形層
24:pn境界
25:ダイオード
26:周辺p+形層
27:周辺絶縁層
28:周辺絶縁部材
28a:上面
28b:下面
29:周辺導電層
30:LOCOS膜
31、32:電極膜
33:抵抗素子
40:空乏層
45:有効領域
101:光検出装置
e-:電子
h+:正孔
p:光子
Claims (4)
- 第1導電形のシリコン層と、
前記シリコン層内に設けられ、第1導電形であり、不純物濃度が前記シリコン層のキャリア濃度よりも高い第1半導体層と、
前記第1半導体層上に設けられ、第2導電形であり、前記第1半導体層とpn境界を形成する第2半導体層と、
前記シリコン層内に設けられ、第1導電形であり、不純物濃度が前記シリコン層の不純物濃度よりも高く、前記第1半導体層から離隔した第3半導体層と、
前記シリコン層の下に設けられ、前記シリコン層に接続された第1電極と、
前記第2半導体層に接続された第2電極と、
を備え、
前記第3半導体層は、前記第1半導体層よりも前記pn境界の境界面に対して垂直な方向において下方に位置し、
前記pn境界の境界面に対して垂直な方向において平面視した場合に、前記第3半導体層は前記第1半導体層の中央部とは重ならず、
前記pn境界の境界面に対して垂直な方向において平面視した場合に、前記第3半導体層は前記第1半導体層の端部と重なり、
前記第3半導体層の不純物濃度は前記シリコン層の不純物濃度の10倍以上であり、
前記第3半導体層は前記シリコン層を介して前記第1電極から離隔した光検出装置。 - 前記第1電極は金属材料により形成されている請求項1に記載の光検出装置。
- 前記第1電極の端子は前記第1電極の下面に接続されている請求項1または2に記載の光検出装置。
- 前記第2電極は前記シリコン層上に配置され、導電性透明材料により形成されている請求項1~3のいずれか1つに記載の光検出装置。
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JP7010180B2 (ja) * | 2018-09-05 | 2022-02-10 | 株式会社デンソー | 測距装置 |
JP7337517B2 (ja) | 2019-03-14 | 2023-09-04 | 株式会社東芝 | 光検出器及び距離測定装置 |
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US11527670B2 (en) * | 2020-02-13 | 2022-12-13 | Infineon Technologies Dresden GmbH & Co. KG | Photon avalanche diode and methods of producing thereof |
JP2022039524A (ja) * | 2020-08-28 | 2022-03-10 | 株式会社東芝 | 半導体装置 |
JP7487131B2 (ja) | 2021-03-18 | 2024-05-20 | 株式会社東芝 | 半導体装置 |
CN115224150A (zh) * | 2022-06-23 | 2022-10-21 | 中国科学院半导体研究所 | 一种硅光电倍增管及其制备方法 |
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