JP2013511854A - 光子検出器 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
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- G01J1/46—Electric circuits using a capacitor
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
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Abstract
【選択図】図1
Description
Claims (19)
- アバランシェフォトダイオードを具備する光子検出システムであって、
前記アバランシェフォトダイオードは、第1導電型を有する第1半導体層と第2導電型を有する第2半導体層とから形成されたpn接合を具備し、
前記第1導電型はn型またはp型から選択され、前記第2導電型は前記第1導電型とは異なりかつn型またはp型から選択され、前記第1半導体層は第1導電型のドーパントでドープされるドープ層であり、
低い場の複数ゾーンに囲まれた高い場の複数ゾーンの複数のアイランドを第1層が具備するように、第1導電型のドーパントの濃度に変化があり、高いおよび低い場の複数ゾーンは、pn接合の平面で横方向に分布していて、ドーパント濃度は、高い場の複数ゾーンでは低い場の複数ゾーンよりも高く、
前記システムは、さらにバイアス部を具備し、前記バイアス部は、時間に関して静的である電圧、および時間変動する電圧を印加する光子検出システム。 - 前記第2層は、前記第1層と境界を接して、前記第1層の高い場および低い場の複数ゾーンの両方でpn接合を形成する請求項1の光子検出システム。
- 前記高い場の複数ゾーンは、pn接合の全範囲の0.5以上の幾何学的な充填率を有している請求項1の光子検出システム。
- 隣接する高い場の複数ゾーン間の最短距離は、5μm以下である請求項1の光子検出システム。
- 前記高い場の複数ゾーンは、前記第2半導体層を介して電気的に結合される請求項1の光子検出システム。
- 複数の高い場のゾーンは、均一な電気ポテンシャルの単一層によって接続されている請求項1の光子検出システム。
- 前記高い場の複数ゾーンは、側方のサイズおよび形が同一である請求項1の光子検出システム。
- 前記アバランシェフォトダイオードは、光子パルスが受け取られる場合、アバランシェ効果を受け、前記システムは、受け取った光子パルスの中の光子数を判定するために前記アバランシェイベントを測定する計数回路をさらに具備する請求項1の光子検出システム。
- 前記計数回路は、前記アバランシェイベントの測定を多数の所定レベルと比較する弁別器を具備する請求項8の光子検出システム。
- 前記アバランシェフォトダイオードからの出力信号を受け取り、前記出力信号から時間変動成分を取り除くために前記出力信号を処理する出力回路をさらに具備する請求項1の光子検出システム。
- 前記時間変動成分は周期的であり、前記出力回路は、あるサイクルでの前記アバランシェフォトダイオードの前記出力電圧を、前の周期での出力電圧と比較する請求項10に記載の光子検出システム。
- 前記出力回路は、
前記信号を2つの部分に分離する信号分割器と、
ある部分を他の部分に対して遅延させる電線と、
前記2つの部分間での差を出力する信号差分器と、を具備する光子検出システム。 - 前記バイアス回路は、前記アバランシェフォトダイオードの破壊電圧よりも上である高い部分と、前記アバランシェフォトダイオードの破壊電圧よりも下である低い部分とを有するように前記時間変動成分を印加し、前記電圧成分の前記高い部分の時間は、全装置のアバランシェ電流が飽和しないように十分短い、請求項1の光子検出システム。
- 前記出力回路は、帯域阻止フィルタを具備する請求項10の光子検出システム。
- 前記アバランシェフォトダイオードにわたって入射光を一様に分散させるレンズおよびコリメーションオプティックスをさらに具備する請求項1の光子検出システム。
- 前記バイアス回路は、前記検出器を介して全電流が飽和する時間よりも短い前記時間変動成分の前記高い部分に印加する請求項13の光子検出システム。
- 光子検出システムを製造する方法であって、
次によってpn接合を形成することを具備し:
第1導電型を有する第1半導体層を形成すること、
ここで第1半導体層は第1導電型のドーパントでドープされたドープ層であり、低い場の複数ゾーンに囲まれた高い場の複数ゾーンのアイランドを第1層が具備するように第1導電型のドーパントの濃度に変動があり、ドーパント濃度は、高い場の複数ゾーンでは低い場の複数ゾーンよりも高く、高いおよび低い場の複数ゾーンはpn接合の平面で横方向に分布していて;
前記第1半導体層に接して、第2導電型を有する第2の単一半導体層を形成すること、を具備し、
ここで第1導電型はn型またはp型から選択されるものであり、第2導電型は第1導電型とは異なりかつn型またはp型から選択され、
方法は、時間に関して静的である電圧と時間変動する電圧をpn接合にわたって印加することをさらに具備する方法。 - 前記第1半導体層を形成することは、より低いドーパント濃度を持った物質の中へより高いドーパント濃度の物質を埋め込むために、ガス浸漬レーザーのドーピング、イオン注入または拡散を使用して、前記高い場の複数ゾーンを形成することを具備する請求項17の方法。
- 前記第1半導体層を形成することは、第1型のより高濃度にドープした物質がエピタキシャルに沈着する第1型の半導体物質へ複数のピットをエッチングすることによって前記高い場の複数ゾーンを形成することを具備する請求項17の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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GB1019217.7 | 2010-11-12 | ||
GB1019217.7A GB2485400B (en) | 2010-11-12 | 2010-11-12 | Photon detector |
PCT/GB2011/001595 WO2012063027A2 (en) | 2010-11-12 | 2011-11-11 | Photon detector |
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JP2013511854A true JP2013511854A (ja) | 2013-04-04 |
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US (1) | US20130214134A1 (ja) |
JP (1) | JP2013511854A (ja) |
GB (1) | GB2485400B (ja) |
WO (1) | WO2012063027A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017224802A (ja) * | 2016-06-13 | 2017-12-21 | 株式会社東芝 | 光子検出デバイスおよび光子検出デバイスを製造する方法 |
JP2019203736A (ja) * | 2018-05-22 | 2019-11-28 | 株式会社デンソー | 光検出器およびその制御方法 |
WO2021124697A1 (ja) * | 2019-12-16 | 2021-06-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
JP2021185606A (ja) * | 2018-03-20 | 2021-12-09 | 株式会社東芝 | 光検出装置 |
Families Citing this family (4)
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GB2560376B (en) | 2017-03-10 | 2020-02-12 | Toshiba Kk | On-Chip Integration of a Bias Tee and a Single Photon Detector |
CN111766045B (zh) * | 2020-07-03 | 2021-09-24 | 电子科技大学 | 一种基于钙钛矿CsPbBr3异质结的光纤端面式模场分析仪 |
CN114739433B (zh) * | 2022-04-15 | 2023-12-26 | 北京京东方光电科技有限公司 | 一种光电传感器信号读取电路及光电传感器装置 |
CN115468662A (zh) * | 2022-08-30 | 2022-12-13 | 中国计量科学研究院 | 基于光子数分辨探测器的测量装置及方法 |
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JP2019203736A (ja) * | 2018-05-22 | 2019-11-28 | 株式会社デンソー | 光検出器およびその制御方法 |
WO2019225480A1 (ja) * | 2018-05-22 | 2019-11-28 | 株式会社デンソー | 光検出器およびその制御方法 |
WO2021124697A1 (ja) * | 2019-12-16 | 2021-06-24 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
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US20130214134A1 (en) | 2013-08-22 |
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GB2485400A (en) | 2012-05-16 |
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