JP2017224802A - 光子検出デバイスおよび光子検出デバイスを製造する方法 - Google Patents
光子検出デバイスおよび光子検出デバイスを製造する方法 Download PDFInfo
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- G01J1/00—Photometry, e.g. photographic exposure meter
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
【解決手段】光子検出デバイス1は、マルチコア光ファイバ2に結合するように構成される。光子検出デバイス1は複数の検出領域を備える。光子検出デバイス1は複数の検出領域を備える。マルチコア光ファイバは複数のコアを備える。検出領域は、光子検出デバイス1がマルチコア光ファイバ2に結合されるとき、各検出領域がマルチコア光ファイバ2の単一のコアだけと位置合せされるように配置される。
【選択図】図4
Description
マルチコアファイバの複数のコアの相対位置を得ることと、
デバイスがマルチコア光ファイバに結合されるとき、各検出領域が、マルチコア光ファイバの単一のコアだけと位置合せするように配置されるよう、光子検出デバイスの複数の検出領域の位置を決定することと
を備える方法が提供される。
第1の伝導率型のドーパントでドープされる第1の半導体層を形成することと、
第2の半導体層を形成することと、
第2の伝導率型のドーパントでドープされる第2の半導体層内の複数の領域を形成することと、デバイスがマルチコア光ファイバに結合されるとき、前記領域が横方向に分離され、マルチコア光ファイバの単一のコアだけと位置合せされる、
を備え、
第1の伝導率型は、n型またはp型から選択された1つであり、第2の伝導率型は、第1の伝導率型とは異なり、n型またはp型から選択される方法が提供される。
ii.ショートアーム813−ロングアーム823(S−L)
初期調節のために、可変遅延線が各送信機干渉計839内に含まれ、各送信機50−1から50−Nについて経路(i)および(ii)に沿った伝播時間を、数ピコ秒であり得る信号レーザコヒーレンス時間内でほぼ等しくするように調節され得る。これは、各送信機50−1から50−Nについての2つの経路の干渉を保証することになる。
Claims (20)
- マルチコア光ファイバに結合するように構成された光子検出デバイスであって、前記デバイスが、複数の検出領域を備え、前記デバイスが前記マルチコア光ファイバに結合されるとき、各検出領域が、前記マルチコア光ファイバの単一のコアだけと位置合せするように配置される光子検出デバイス。
- 前記検出領域が、使用時に、前記マルチコアファイバの単一のコアから放出される光が前記コアと位置合せされる前記検出領域で検出されるように配置される、請求項1に記載のデバイス。
- 前記デバイスが前記マルチコア光ファイバに結合されるとき、前記光子検出デバイスのどの検出領域も、前記マルチコア光ファイバの単一のコアと位置合せされる、請求項1または2に記載のデバイス。
- 前記デバイスが前記マルチコア光ファイバに結合されるとき、各コアの断面エリアの全体が、対応する検出領域の断面エリアの少なくとも一部分と重複する、先行する請求項のいずれかに記載のデバイス。
- 前記デバイスが前記マルチコア光ファイバに結合されるとき、前記マルチコア光ファイバの各コアが、単一の検出領域だけと位置合せされる、先行する請求項のいずれかに記載のデバイス。
- 各検出領域の面積が、対応するコアの断面積より大きい、先行する請求項のいずれかに記載のデバイス。
- 各検出領域が、50μm2未満の面積を有する、先行する請求項のいずれかに記載のデバイス。
- 隣接する検出領域間の最短距離が、40μmから200μmの間である、先行する請求項のいずれかに記載のデバイス。
- 前記検出領域が、単一の検出領域の周囲に放射状形態に配置される、先行する請求項のいずれかに記載のデバイス。
- 20個未満の検出領域が存在する、先行する請求項のいずれかに記載のデバイス。
- 前記検出領域が、単一の光子を検出するように構成される、先行する請求項のいずれかに記載のデバイス。
- 前記検出領域が、半導体基板上に集積されたアバランシェ増倍領域を備える、先行する請求項のいずれかに記載のデバイス。
- 前記検出領域が、丸形形状を有する、先行する請求項のいずれかに記載のデバイス。
- 請求項1から13のいずれかに記載のデバイスと、前記マルチコア光ファイバとを備えるアセンブリ。
- 請求項14に記載のアセンブリを備える量子受信機。
- 複数の復号ユニットと、多重化構成要素とをさらに備え、前記多重化構成要素が、前記復号ユニットからの1つまたは複数の出力を前記マルチコア光ファイバ上に多重化するように構成される、請求項15に記載の量子受信機。
- 前記多重化構成要素が、ファイバファンアウトである、請求項16に記載の量子受信機。
- 複数の量子送信機と、請求項15から17のいずれか一項に記載の量子受信機とを備える量子通信システム。
- マルチコア光ファイバに結合するように構成された光子検出デバイスを設計する方法であって、
前記マルチコアファイバの複数のコアの相対位置を得ることと、
前記デバイスが前記マルチコア光ファイバに結合されるとき、各検出領域が、前記マルチコア光ファイバの単一のコアだけと位置合せするように配置されるように、前記光子検出デバイスの複数の検出領域の位置を決定することと
を備える方法。 - マルチコア光ファイバに結合するように構成された光子検出デバイスを製造する方法であって、
第1の伝導率型のドーパントでドープされる第1の半導体層を形成することと、
第2の半導体層を形成することと、
第2の伝導率型のドーパントでドープされる、前記第2の半導体層内の複数の領域を形成することと、前記デバイスが前記マルチコア光ファイバに結合されるとき、前記領域が横方向に分離され、前記マルチコア光ファイバの単一のコアだけと位置合せされる、
を備え、
前記第1の伝導率型が、n型またはp型から選択された1つであり、前記第2の伝導率型が、前記第1の伝導率型とは異なり、n型またはp型から選択される方法。
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US10302867B1 (en) | 2018-04-05 | 2019-05-28 | Northrop Grumman Systems Corporation | Redirected optical modulator output |
CN108957626B (zh) * | 2018-06-19 | 2020-09-08 | 全球能源互联网研究院有限公司 | 一种反馈式传能光纤及光纤传能系统、装置 |
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