WO2014063412A1 - 基于磁温差电效应的传感器元件及其实现方法 - Google Patents
基于磁温差电效应的传感器元件及其实现方法 Download PDFInfo
- Publication number
- WO2014063412A1 WO2014063412A1 PCT/CN2012/086286 CN2012086286W WO2014063412A1 WO 2014063412 A1 WO2014063412 A1 WO 2014063412A1 CN 2012086286 W CN2012086286 W CN 2012086286W WO 2014063412 A1 WO2014063412 A1 WO 2014063412A1
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- WO
- WIPO (PCT)
- Prior art keywords
- thermoelectric
- magnetic
- sensor element
- magnetic field
- thermoelectric element
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000000694 effects Effects 0.000 title abstract description 18
- 230000005291 magnetic effect Effects 0.000 claims abstract description 74
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 230000005676 thermoelectric effect Effects 0.000 claims abstract description 21
- 239000000696 magnetic material Substances 0.000 claims abstract description 19
- 238000005485 electric heating Methods 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000005459 micromachining Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- -1 semimetals Substances 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000006872 improvement Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910001291 heusler alloy Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
Definitions
- the present invention relates to the field of sensor technology, and in particular to a sensor element based on a magnetic temperature difference electrical effect and an implementation method thereof.
- Magnetic sensors are widely used in many fields such as spatial positioning and orientation, automatic monitoring and control, and information storage. Among them, magnetic sensing components are the key components that determine the performance and use of magnetic sensors.
- magnetic sensing elements can be classified into Faraday magnetic induction, anisotropy magneto-resistance (AMR), Hall effect, giant magnetoresistance (GMR: Different types of effects such as giant magneto-resistance and TM giant magneto-resistance.
- AMR anisotropy magneto-resistance
- GMR giant magnetoresistance
- Sensors that are particularly sensitive to GMR and TMR effects, because of their high sensitivity and suitable for large-capacity information storage In recent years, in order to meet the increasing demand for storage density, ultra-high-sensitivity magnetoresistive components have been in the state of development competition, and the focus of research and development is to find more suitable by finding.
- the material, the more suitable multilayer structure and the more suitable manufacturing process improve the sensitivity and stability of the components.
- WO/2012/093587 C02FE-BASED HEUSLER ALLOY AND SPINTRONIC DEVICE USING SAME proposes a CPP-GMR element which obtains the highest MR ratio and high output signal by using Heusler alloy
- WO/2011/103437 A HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS proposes multi-period structural components with ferromagnetic exchange coupling and display giant magnetoresistance (GMR);
- WO/2011/007767 METHOD FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC SENSOR, ROTATION-ANGLE DETECTION DEVICE discloses a method for regulating the magnetization orientation of a fixed ferromagnetic film layer and the process of preparing a GMR film;
- Application Number 2009280406 Method of MANUFACTURING TMR READ HEAD, AND TMR LAMINATED BODY
- GMR-based or TMR-based sensors can temporarily meet the requirements of recent storage density technology development
- both types of sensor elements are multilayer structures formed by stacking different performance films (see, for example, WO/2010/050125; WO/ 2002/078021; Application Number 06000077; Application Number 10011433)
- thermoelectric element based on a magnetic thermoelectric effect
- the sensor element comprising a plurality of angularly-shaped thermoelectric elements in a magnetic field
- the thermoelectric element being made of a magnetic material having a thermoelectric effect
- the thermoelectric element comprising the first The side, the second side and the corner formed by the two sides are connected, and the corner is provided with heating means, and the temperature of the area where the other end of the first side and the second side is located is less than or equal to the ambient temperature.
- the heating device is an electric heating wire or an illumination device, and the corner heating is achieved by energizing or partially illuminating the electric heating wire, and the heating temperature is adjusted by the current or the intensity of the light.
- an insulating thin layer is further disposed between the electrothermal thin wire and the thermoelectric element.
- the first side and the second side of the thermoelectric component are bent and formed by the same magnetic material having a thermoelectric effect, or are formed by welding a magnetic material having different thermoelectric effects, the first
- the angle between the edge and the second side is 0 ⁇ 180.
- the corner portion is a bent portion of the first side and the second side, or a welded portion of the first side and the second side.
- the first side and the second side of the thermoelectric element are made of conventional filaments of magnetic material, or thin film lines are formed on the insulating substrate by vacuum coating and micromachining.
- the plurality of angular structural thermoelectric elements located in the magnetic field are connected in series or in parallel with each other, or a combination of series and parallel.
- the plurality of thermoelectric elements are sequentially connected in a line shape, the former
- the end of the second side of the thermoelectric component is electrically connected to the first end of the latter thermoelectric element.
- the first end of the thermoelectric component is electrically connected to each other, and the second component of the thermoelectric component is electrically connected.
- the side ends are electrically connected to each other.
- the angle between the first side and the second line side of the same thermoelectric component is 90°, and the plurality of thermoelectric elements are connected in series when the turns are in a right-angled triangle.
- the magnetic material having the thermoelectric effect of the thermoelectric element is a metal, or a semimetal, or a semiconductor, or a conductive oxide.
- thermoelectric element is parallel to the magnetic field.
- thermoelectric component is placed in a magnetic field, the thermoelectric component comprising a plurality of angularly structured thermoelectric elements, the thermoelectric component being made of a magnetic material having a thermoelectric effect, the thermoelectric component comprising a first side, a second a side and a corner formed by the two sides;
- the temperature difference electrical component of the angular structure converts the change information of the magnetic field into the changed electrical information based on the magnetic temperature difference electric effect, and outputs the voltage at both ends of the thermoelectric element.
- the sensor element structure and the manufacturing process of the invention have stable performance and can be processed into various forms and sizes, and can be used for developing different kinds of magnetic field sensors, in particular, it is possible to develop ultra-high A new generation of readout heads for density magnetic information storage is widely used in many fields including information storage.
- FIG. 1 is a schematic structural view of a temperature difference electrical component of a sensor element according to an embodiment of the present invention
- FIG. 2 is a schematic flow chart of an implementation principle of a sensor component according to an embodiment of the present invention
- the invention discloses a sensor element based on a magnetic temperature difference electric effect, the sensor element comprises a plurality of angular difference thermoelectric elements located in a magnetic field, the thermoelectric element is made of a magnetic material having a thermoelectric effect, and the thermoelectric element comprises a first a side, a second side and a corner formed by the two sides, a heating device is arranged at the corner, and the temperature of the area of the other end of the first side and the second side is less than or equal to the ambient temperature Degree.
- the invention also discloses a method for realizing a sensor element based on a magnetic temperature difference electric effect, and the method comprises:
- thermoelectric component is placed in a magnetic field, and the thermoelectric component comprises a plurality of angular differential thermoelectric elements, the thermoelectric component is made of a magnetic material having a thermoelectric effect, and the thermoelectric component comprises a first side, a second side, and two sides. Connecting the formed corners;
- the temperature difference electrical component of the angular structure converts the change information of the magnetic field into the changed electrical information based on the magnetic temperature difference electric effect, and outputs the voltage at both ends of the thermoelectric element.
- the invention relates to a sensor element based on magnetic temperature difference electric effect and an implementation method thereof.
- a thermoelectric component having an angular structure is placed in a magnetic field, and a corner portion of the thermoelectric component is heated.
- a voltage across the thermoelectric component is corresponding. Change, thereby realizing the transformation of magnetic field information into electrical information.
- a sensor element based on a magnetic temperature difference electric effect includes a plurality of angular differential thermoelectric elements 10 located in a magnetic field H, and the thermoelectric component 10 is made of a magnetic material having a thermoelectric effect.
- the thermoelectric component 10 includes a first side 11, a second side 12, and a corner portion 13 formed by the first side 11 and the second side 12 being joined.
- the corner portion 13 is provided with heating means.
- the heating device is an electric heating wire or an illumination device, and the heating of the diagonal portion 13 is achieved by electric heating or local illumination, and the heating temperature is adjusted by the intensity of the current or the light.
- the electric heating thin wire 20 is energized and heated, and the heating temperature is adjusted by the magnitude of the current.
- thermoelectric component 10 Place the thermoelectric component 10 in the magnetic field H; Heating the corner portion 13 of the thermoelectric element 10 such that the temperature of the corner portion 13 is higher than the temperature of the other end of the first side 11 and the second side 12;
- thermoelectric component 10 converts the information of the magnetic field change into the changed electrical information.
- thermoelectric element in the present embodiment is made of a magnetic material having a thermoelectric effect, and has a magnetic anisotropy of a thermoelectric effect, which may be a metal, or a semimetal, or a semiconductor, or a conductive oxide.
- the first side and the second side of the thermoelectric element are made of conventional filaments of magnetic material, or thin film lines are formed on the insulating substrate by vacuum coating and micromachining, thereby forming a miniature or small-sized sensor.
- the thermoelectric element is placed in a variable magnetic field H.
- the plane of the thermoelectric element is parallel to the direction of the variable magnetic field H, and in other embodiments there may be a certain angle.
- the corner portion 13 (F portion) is heated by a heating device to form a high temperature region, and the ends E and G of the first side 11 and the second side 12 are placed in a lower temperature region, and may be directly placed at ambient temperature.
- the ends E and G are two temperature junctions, and the corner F is a high temperature junction.
- the thermoelectric component passes the temperature difference between the high temperature junction and the temperature junction, and directly converts the thermal energy at the high temperature end into electrical energy, thereby A voltage is generated between the two ends E and G.
- the magnitude of the voltage changes with the change of the magnetic field strength, and the positive and negative polarities of the voltage change with the change of the magnetic field direction, thereby realizing the transformation of the magnetic field information and the electrical information.
- the electric heating wire 20 is directly in contact with the corner portion (F portion) of the thermoelectric component 10.
- the electrothermal thin wire and the thermoelectric component may be indirectly contacted with an insulating thin layer.
- the first side and the second side of the thermoelectric element may be of the same material or different materials conforming to heat transfer matching requirements.
- the same material it is directly bent and formed, and the bent portion is the corner portion of the thermoelectric component; when different materials are used, the two materials are welded and formed, and the welded portion is the corner portion of the thermoelectric component.
- the angle between the first side and the second side is 0 ⁇ 180°.
- the thermoelectric component is bent by using the same magnetic material having a thermoelectric effect, and the bending angle between the first side and the second side is preferably set to 90°.
- the electrical heating causes the temperature of the component F to 345.
- thermoelectric component in the invention can be used alone, and the electromotive force generated by each single thermoelectric component is small, only a few to several hundred microvolts, and a plurality of thermoelectric components can be connected in series to amplify the electricity. Signal, improve the sensitivity of the sensor.
- thermoelectric elements When connected in series, the thermoelectric elements are connected in a line shape when connected in series, and the end of the second side of the previous thermoelectric element is electrically connected to the first end of the latter thermoelectric element, preferably, the thermoelectric element
- the angle between the first side and the second line side is 90°, and the cross section of the thermoelectric elements connected in series is a right-angled triangle.
- the oblique side can also be set as a curve or the like;
- the first end portions of the thermoelectric elements are electrically connected to each other, and the second end portions of the thermoelectric elements are electrically connected to each other as two connection ends.
- the voltage across the series assembly is proportional to the number of components, thereby improving the magnetic-electrical information conversion performance of the sensor element.
- the sensor element based on the magnetic temperature difference electric effect and the implementation method thereof are used to place the thermoelectric component having the angular structure in the magnetic field, and to heat the corner of the thermoelectric component, when the magnetic field changes, the temperature difference The voltage across the electrical component changes accordingly, thereby realizing the conversion of magnetic field information to electrical information.
- the sensor element of the invention has a single structure, stable performance, easy to manufacture or process into various forms and sizes, and is used for developing different kinds of magnetic field sensors, in particular, a new generation of readings which may be used for developing ultra-high density magnetic information storage.
- the magnetic head is widely used in many fields including information storage.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/438,003 US9797962B2 (en) | 2012-10-26 | 2012-12-10 | Sensor element based on magneto-thermoelectric effect, and realizing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210419190.1 | 2012-10-26 | ||
CN201210419190.1A CN102901940B (zh) | 2012-10-26 | 2012-10-26 | 基于磁温差电效应的传感器元件及其实现方法 |
Publications (1)
Publication Number | Publication Date |
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WO2014063412A1 true WO2014063412A1 (zh) | 2014-05-01 |
Family
ID=47574282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2012/086286 WO2014063412A1 (zh) | 2012-10-26 | 2012-12-10 | 基于磁温差电效应的传感器元件及其实现方法 |
Country Status (3)
Country | Link |
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US (1) | US9797962B2 (zh) |
CN (1) | CN102901940B (zh) |
WO (1) | WO2014063412A1 (zh) |
Citations (4)
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CN201233438Y (zh) * | 2008-07-29 | 2009-05-06 | 比亚迪股份有限公司 | 一种霍尔传感器 |
WO2010050125A1 (ja) * | 2008-10-31 | 2010-05-06 | 株式会社日立製作所 | Cpp-gmr素子、tmr素子および磁気記録再生装置 |
WO2012093587A1 (ja) * | 2011-01-07 | 2012-07-12 | 独立行政法人物質・材料研究機構 | Co2Fe基ホイスラー合金とこれを用いたスピントロニクス素子 |
CN102983791A (zh) * | 2012-10-26 | 2013-03-20 | 苏州大学 | 温差交流发电装置及其发电方法 |
Family Cites Families (13)
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US3564401A (en) * | 1965-08-16 | 1971-02-16 | Nasa | Thermally cycled magnetometer |
JP3777024B2 (ja) * | 1997-06-26 | 2006-05-24 | 内橋エステック株式会社 | 磁界の検出方法 |
JP4089985B2 (ja) * | 1997-07-17 | 2008-05-28 | 内橋エステック株式会社 | 多ヘッド型磁界センサ |
WO2002077657A1 (en) | 2001-03-22 | 2002-10-03 | Fujitsu Limited | Magnetoresistive spin-valve sensor and magnetic storage apparatus |
CN100394450C (zh) * | 2002-10-26 | 2008-06-11 | 深圳市华夏磁电子技术开发有限公司 | 自旋阀巨磁电阻及含有该巨磁电阻的验钞机磁头传感器 |
JP2004289100A (ja) | 2003-01-31 | 2004-10-14 | Japan Science & Technology Agency | Cpp型巨大磁気抵抗素子及びそれを用いた磁気部品並びに磁気装置 |
JP2005078750A (ja) * | 2003-09-02 | 2005-03-24 | Toshiba Corp | 磁気記録再生装置 |
US7408747B2 (en) | 2005-02-01 | 2008-08-05 | Hitachi Global Storage Technologies Netherlands B.V. | Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing |
WO2008142748A1 (ja) | 2007-05-16 | 2008-11-27 | Fujitsu Limited | 磁気ディスク装置用の磁気ヘッド |
JP5279297B2 (ja) | 2008-02-27 | 2013-09-04 | 株式会社パイロットコーポレーション | スライド式の複合筆記具 |
US8779764B2 (en) | 2009-07-13 | 2014-07-15 | Hitachi Metals, Ltd. | Method for producing magnetoresistive effect element, magnetic sensor, rotation-angle detection device |
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2012
- 2012-10-26 CN CN201210419190.1A patent/CN102901940B/zh not_active Expired - Fee Related
- 2012-12-10 WO PCT/CN2012/086286 patent/WO2014063412A1/zh active Application Filing
- 2012-12-10 US US14/438,003 patent/US9797962B2/en not_active Expired - Fee Related
Patent Citations (4)
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CN201233438Y (zh) * | 2008-07-29 | 2009-05-06 | 比亚迪股份有限公司 | 一种霍尔传感器 |
WO2010050125A1 (ja) * | 2008-10-31 | 2010-05-06 | 株式会社日立製作所 | Cpp-gmr素子、tmr素子および磁気記録再生装置 |
WO2012093587A1 (ja) * | 2011-01-07 | 2012-07-12 | 独立行政法人物質・材料研究機構 | Co2Fe基ホイスラー合金とこれを用いたスピントロニクス素子 |
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Also Published As
Publication number | Publication date |
---|---|
US9797962B2 (en) | 2017-10-24 |
CN102901940B (zh) | 2015-07-15 |
US20150293186A1 (en) | 2015-10-15 |
CN102901940A (zh) | 2013-01-30 |
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