WO2012136132A1 - 单一芯片桥式磁场传感器及其制备方法 - Google Patents

单一芯片桥式磁场传感器及其制备方法 Download PDF

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Publication number
WO2012136132A1
WO2012136132A1 PCT/CN2012/073488 CN2012073488W WO2012136132A1 WO 2012136132 A1 WO2012136132 A1 WO 2012136132A1 CN 2012073488 W CN2012073488 W CN 2012073488W WO 2012136132 A1 WO2012136132 A1 WO 2012136132A1
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magnetic
field sensor
magnetic field
free layer
layer
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PCT/CN2012/073488
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English (en)
French (fr)
Inventor
雷啸锋
金英西
迪克⋅詹姆斯·G
沈卫锋
刘明峰
王建国
薛松生
Original Assignee
江苏多维科技有限公司
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Priority claimed from CN 201110326762 external-priority patent/CN102331564B/zh
Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to EP12767908.2A priority Critical patent/EP2696211B1/en
Priority to US14/009,834 priority patent/US9123877B2/en
Priority to JP2014502975A priority patent/JP2014516406A/ja
Publication of WO2012136132A1 publication Critical patent/WO2012136132A1/zh
Priority to US14/836,256 priority patent/US9722175B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0052—Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3993—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures in semi-conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the invention relates to a GM R, MTJ bridge sensor design and preparation method, in particular to a single core; t bridge magnetic field sensor, the puncturing method can be used to fabricate a half bridge, full bridge magnetic sensor on a single magnetic film.
  • Magnetic tunnel junction sensor (M:TJ,Magiietic Tunel Junction) is a new magnetoresistance effect sensor that has been used in industrial applications in recent years. It utilizes the tunnel magnetoresistance (TMR) of magnetic multilayer film materials.
  • TMR tunnel magnetoresistance
  • the resistance of the magnetic multilayer film changes significantly with the change of the magnitude and direction of the external magnetic field, which is larger than the AMR (anisotropic magnetoresistance effect) which was previously found and practically applied.
  • the rate of change of resistance has better temperature stability than that of Hall effect material.
  • MTJ magnetic sensor has the advantages of large resistance change rate, large output signal amplitude, high resistivity, low power consumption and high temperature stability.
  • the magnetic field measuring device made of MTJ has higher sensitivity, lower power consumption, better linearity, wider dynamic range, better temperature characteristics and stronger anti-interference ability than AMR, GMR and Hall devices.
  • MTJ can be easily integrated into existing chip micromachining processes, making it easy to make small integrated magnetic field sensors.
  • the push-pull bridge sensor has higher sensitivity than the single-resistance, reference-resistance bridge sensor, and has temperature compensation to suppress the effects of temperature drift.
  • Conventional push-pull bridge sensors require that the magnetic moments of the pinning layers of the magnetic ramps in the adjacent two arm resistances are opposite, and the magnetic ramps typically deposited on the same silicon wafer, due to its The magnetic field strength required for magnetic moment inversion is the same, so the magnetic moment of the magnetoresistive pinning layer on the same silicon wafer is usually the same. This makes it difficult to make push-pull bridge sensors.
  • the methods for fabricating push-pull bridge sensors are as follows: Two different film forming processes are used to deposit MTJ components with opposite pinning layers in two stages, which makes the fabrication process complicated, and the second process is obviously annealed. A film that affects the first deposition. This results in poor consistency of the two films before and after, resulting in different resistances of the bridge arms of different bridge arms, affecting the overall performance of the sensor.
  • Multi-chip package technology Generally, two consistent magnetic resistors are taken from the same silicon wafer or different silicon wafers. The two magnetoresistors have the same sensitive direction (pinning layer direction), and then one of them is opposite to the other. Flip 180 degrees for multi-chip packaging to form a push-pull half-bridge. As a result, the push-pull half-bridge function can be realized, that is, the detection sensitivity is improved, and the temperature compensation function is provided, but on the other hand, the multi-chip package has a large package size and high production cost: the actual package cannot be strictly performed.
  • Degree flipping that is, the sensitivity direction of the two resistors is not strictly 180 degrees apart, so that the output characteristics of the two resistors vary with the external field, the sensitivity is different, and there is asymmetry problem such as a large bias voltage, so that the practical application It will bring new problems.
  • the present invention provides a single chip full bridge magnetic field sensor comprising four magnetoresistive elements, wherein each magnetoresistive element ff1 - one or more GMR or MTJ sensing elements are formed in series, the sensing element is composed of Constructed by a spinner, the sensing element comprises a magnetic free layer and a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements are oriented in the same direction; the two magnetoresistive elements are located at opposite positions
  • the direction of the magnetic moment of the magnetic free layer is the same, the direction of the magnetic moment of the magnetic free layer of each magnetoresistance is the same as the direction of the magnetic moment of the magnetic pinning layer, and the magnetic freedom of the two magnetoresistive elements located at adjacent positions
  • the direction of the magnetic moment of the layer is the same as the angle formed by the direction of the magnetic moment of the magnetic pinning layer, and the magnetic moment directions of the magnetic free layers of the two magnetoresistive elements located at adjacent positions are different.
  • a second aspect of the present invention provides a method for fabricating a single-chip full-bridge magnetic field sensor, in which one or more GMR or MTJ sensing elements are respectively connected in series to form four magnetoresistive elements, and four magnetoresistive elements are connected to form a full bridge.
  • the magnetoresistive element has a shape in which the magnetic moment direction of the magnetic free layer is directed toward the magnetic easy axis direction.
  • a third aspect of the present invention provides a method for fabricating a single-chip full-bridge magnetic field sensor, in which one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full bridge.
  • a magnetic field sensor; a magnet for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrated on the full bridge magnetic field sensor.
  • a fourth aspect of the present invention provides a method for fabricating a single-chip full-bridge magnetic field sensor, in which one or more GMR or ⁇ , ⁇ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a a full bridge magnetic field sensor; a current line for biasing the magnetic moment direction of the free layer of the magnetoresistance thereof is integrated on the full bridge magnetic field sensor, the current direction of the current line and the magnetic nail of the MTJ or GMR magnetoresistive element The magnetic moment of the tie layer is the same.
  • a fifth aspect of the present invention provides a method for fabricating a single-chip full-bridge magnetic field sensor, in which one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full bridge.
  • the magnetic field sensor; the magnetic resistance of the magnetic free layer and the magnetic pinning layer is biased from the magnetic moment direction of the germanium layer.
  • a sixth aspect of the present invention provides a method for preparing a full-bridge magnetic field sensor of a chip, in which one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full Bridge magnetic field sensor; biasing the magnetic moment direction of its magnetoresistive free layer by depositing a magnetic layer in the magnetic free layer and utilizing its weak antiferromagnetic coupling with the magnetic free layer.
  • a seventh aspect of the present invention provides a method for fabricating a single-chip full-bridge magnetic field sensor, in which one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full bridge. Magnetic field sensor; The direction of the magnetic moment of the magnetoresistive free layer is biased by one or more of the combinations of the methods of claims 8-12.
  • the present invention also provides a single chip half bridge magnetic field sensor comprising two magnetoresistive elements, wherein each magnetoresistive element is composed of one or more GMR or MTJ sensing elements connected in series, and the sensing element is composed of a spin valve,
  • the sensing element comprises a magnetic free layer and a magnetic pinning layer; the magnetic pinning layers of the magnetoresistive elements are arranged in the same direction, and the magnetic free layers of the two magnetoresistive elements have different magnetic moment directions;
  • the direction of the magnetic moment of the magnetic free layer of the magnetoresistive elements is the same as the angle of the magnetic moment of the magnetic pinning layer.
  • the invention also provides a method for preparing a single chip half bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor;
  • the magnetoresistive element has a shape in which the magnetic moment direction of the magnetic free layer is directed toward the magnetic easy axis direction.
  • the invention also provides a method for preparing a single chip half-bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; A magnet for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrated on the half-bridge magnetic field sensor.
  • the invention also provides a method for preparing a single chip half bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; A current line for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrated on the half-bridge magnetic field sensor, and the current direction of the current line and the magnetic field of the magnetic pinning layer of the MTJ or GMR magnetoresistive element The moments are in the same direction.
  • the invention also provides a method for preparing a single chip half-bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; The magnetic moment of the magnetoresistive free layer is biased by the magnetic free layer and the magnetic coupling layer of the magnetic pinning layer.
  • the invention also provides a method for preparing a single chip half bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor;
  • the magnetic moment direction of the magnetoresistive free layer is biased by depositing a magnetic layer in the magnetic free layer and utilizing its weak antiferromagnetic coupling with the magnetic free layer.
  • the invention also provides a method for preparing a single chip half bridge magnetic field sensor, wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; The direction of the magnetic moment of the magnetoresistive free layer is biased by one or more of the combinations of the methods of claims 19-23.
  • FIG. 1 is a schematic structural view of a magnetic tunnel junction (MTJ).
  • MTJ magnetic tunnel junction
  • Figure 2 is a schematic diagram showing the output characteristics of an ideal magnetic tunnel junction field resistance.
  • Figure 3 is a view of the free magnetic layer and the pinning layer at different angles under the action of a magnetic field perpendicular to the direction of the pinning layer. Schematic diagram of layer magnetic moment rotation and resistance change.
  • Figure 4 is a schematic diagram showing the biasing of the magnetic free layer of the magnetoresistive element by the sheet-like permanent magnet integrated on the magnetoresistive element.
  • Figure 5 is a schematic diagram of the operation of a conventional push-pull full-bridge MTJ or GMR sensor.
  • Figure 6 is a schematic diagram of the operation of a single chip push-pull full-bridge magnetic field sensor.
  • Fig. 7 is a schematic view showing the external magnetic field in a sensitive direction and the magnetic moment of the resistance free layer of each bridge arm.
  • Figure 8 is a schematic diagram showing the bias of the self-twisting magnetic moment of a push-pull full bridge using a permanent magnet integrated on a chip.
  • Figure 9 is a schematic illustration of biasing using a magnetic field generated by a current conductor integrated into the chip.
  • Figure 10 is a schematic illustration of a preferred push-pull full-bridge magnetic field sensor implementation.
  • FIG. 11 is a schematic diagram of a specific implementation of a single chip push-pull full bridge hook.
  • Figure 12 shows the output characteristics of the push-pull full bridge shown in Figure l i.
  • Figure i3 shows a schematic diagram of a single chip push-pull half-bridge magnetic field sensor.
  • Figure 14 shows an embodiment of a push-pull half-bridge magnetic field sensor.
  • Figure 15 shows an alternative embodiment of a push-pull half-bridge magnetic field sensor.
  • Figure 16 is a partially enlarged schematic view showing an embodiment of a push-pull half-bridge magnetic field sensor.
  • Figure 17 is a partially enlarged schematic view showing another embodiment of a push-pull half-bridge magnetic field sensor.
  • the present invention provides a single-chip full-bridge magnetic field sensor comprising four magnetoresistive elements, wherein each magnetoresistive element ⁇ one or more GMR or MTJ sensing elements are formed in series, and the sensing element is formed by a spin valve.
  • the sensing element comprises a magnetic free layer and a magnetic pinning layer; the direction of the magnetic pinning layer of the magnetoresistive element is disposed in the same direction; the magnetic moment direction of the magnetic free layer of the two magnetoresistive elements located at opposite positions Similarly, the magnetic moment direction of the magnetic free layer of each magnetoresistance is the same as the magnetic moment direction of the magnetic pinning layer, and the magnetic moment direction of the magnetic free layer of the two magnetoresistive elements located at adjacent positions is magnetic The angle of the magnetic moment of the pinning layer is the same, and the magnetic moment directions of the magnetic free layers of the two magnetoresistive elements located at adjacent positions are different.
  • the magnetoresistive element has a shape in which the magnetic moment direction of the magnetic free layer is directed to the direction of its magnetic easy axis, and in particular, the shape may be an ellipse, a rectangle, or a diamond.
  • a permanent magnet is integrally disposed on the full bridge magnetic field sensor, and is biased in the direction of the magnetic moment of the free layer of the magnetoresistance.
  • a current line is integrated on the full bridge magnetic field sensor for biasing the magnetic moment direction of the free layer of the magnetoresistance, and the current direction of the current line is the same as the magnetic moment direction of the magnetic pinning layer of the MTJ or GMR magnetoresistive element .
  • the magnetic moment direction of the magnetoresistive free layer is biased by the magnetic free layer and the magnetic coupling layer of the magnetic pinning layer.
  • the magnetic moment direction of the magnetoresistive free layer is biased by depositing a magnetic layer on the magnetic free layer and utilizing its weak antiferromagnetic coupling with the magnetic free layer.
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full-bridge magnetic field sensor;
  • the direction of the magnetic moment having the magnetic free layer is directed to the shape of its magnetic easy axis direction.
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full-bridge magnetic field sensor;
  • a magnet for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrated on the bridge magnetic field sensor.
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to be hooked into a full-bridge magnetic field sensor:
  • a current line for biasing the magnetic moment direction of the free layer of the magnetoresistance is integrated on the bridge magnetic field sensor, and the current direction of the current line is the same as the magnetic moment direction of the magnetic pinning layer of the ⁇ , ⁇ or GMR magnetoresistive element .
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full-bridge magnetic field sensor;
  • the Neel coupling field of the layer and the magnetic pinning layer biases its magnetoresistance from the direction of the magnetic moment of the layer.
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full-bridge magnetic field sensor;
  • the free layer deposits a magnetic layer and a weak antiferromagnetic coupling between it and the magnetic free layer to bias the magnetic moment direction of its free resistive layer.
  • a method for preparing a single-chip full-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into four magnetoresistive elements, and four magnetoresistive elements are connected to form a full-bridge magnetic field sensor: One or more of the combinations, the magnetoresistance of which is biased from the magnetic moment of the layer.
  • the present invention also provides a single chip half bridge magnetic field sensor comprising two magnetoresistive elements, wherein each magnetoresistive element is composed of one or more GMR or MTJ sensing elements connected in series, and the sensing element is composed of a spin valve.
  • the sensing element comprises a magnetic free layer and a magnetic pinning layer; the magnetic pinning layer of the magnetoresistive element is disposed in the same direction, and the magnetic free layers of the two magnetoresistive elements have different magnetic moment directions; The magnetic free direction of the magnetic free layers of the two magnetoresistive elements is at the same angle as the magnetic moment direction of the magnetic pinning layer.
  • the magnetoresistive element has a shape in which the magnetic moment direction of the magnetic free layer is directed to the direction of its magnetic easy axis, and in particular, the shape may be an ellipsoid, a rectangle, or a diamond.
  • a magnet is integrally disposed on the full bridge magnetic field sensor for biasing the magnetic moment direction of the free layer of the magnetoresistance.
  • a current line is integrated on the full bridge magnetic field sensor for biasing the magnetic moment direction of the free layer of the magnetoresistance, the current direction of the current line and the magnetic moment of the magnetic pinning layer of the MTJ or GMR magnetoresistive element The same direction.
  • the magnetic moment direction of the magnetoresistive free layer is biased by the magnetic coupling layer of the magnetic self-twist layer and the magnetic pinned layer.
  • a method for preparing a single-chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; the magnetoresistive element has The direction of the magnetic moment of the magnetic free layer is directed to the shape of its magnetic easy axis direction.
  • a method for preparing a single chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor: in the half bridge A magnet for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrally provided on the magnetic field sensor.
  • a method for preparing a single-chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor;
  • a current line for biasing the direction of the magnetic moment of the free layer of the magnetoresistance is integrated on the sensor, and the current direction of the current line is the same as the magnetic moment of the magnetic pinning layer of the MTJ or GMR magnetoresistive element.
  • a method for preparing a single-chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor;
  • the Neel coupling field with the magnetic pinning layer biases the magnetic moment direction of its magnetoresistive free layer.
  • a method for preparing a single chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor;
  • the ruthenium layer deposits a magnetic layer and facilitates the weak antiferromagnetic coupling between it and the magnetic free layer to bias the magnetic moment direction of the free layer of the magnetoresistance.
  • a method for preparing a single-chip half-bridge magnetic field sensor wherein one or more GMR or MTJ sensing elements are respectively connected in series into two magnetoresistive elements, and two magnetoresistive elements are connected to form a half bridge magnetic field sensor; One or more combinations of biasing the direction of the magnetic moment of the free layer of the magnetoresistance.
  • the structure of the magnetic ramp ( ⁇ , ⁇ ) consists of a nano-scale multilayer film: layer 1, magnetic pinned layer 2, non-magnetic insulating layer 3, and magnetic free layer 4.
  • the direction of the magnetic moment of the magnetic T-tie 2 is as shown in 5.
  • the direction of the magnetic moment of the magnetic free layer 4 is as shown in 6.
  • the magnetic moment direction 5 of the magnetic T-bond layer 2 and the magnetic moment direction 6 of the magnetic free layer 4 are perpendicular to each other.
  • the magnetic moment direction 6 of the magnetic free layer 4 changes as the magnitude and direction of the applied magnetic field 7 changes.
  • the magnetic resistance of the magnetic tunnel junction MTJ varies with the angle between the magnetic moment direction 6 of the magnetic free layer 4 and the magnetic moment direction 5 of the magnetic nailed layer 2.
  • the direction of the magnetic moment of the magnetically pinned layer is pinned to the direction of the magnetic pinning layer, so that the magnetic resistance of the tunnel junction TMR actually follows the magnetic moment direction 6 of the magnetic free layer 4 and the magnetic pinning layer
  • the angle of the magnetic moment of 1 changes.
  • the direction of the applied magnetic field 7 is pinned
  • the direction of the magnetic moment 5 of the layer 2 is anti-parallel, and the intensity of the applied magnetic field is greater than H2
  • the direction of the magnetic moment of the magnetic free layer 4 is anti-parallel to the direction of the applied magnetic field 7, and further the direction of the magnetic moment of the magnetically-stacked layer 2 Anti-parallel, as shown in Figure 9, at this time, the reluctance of the junction TMR is the largest.
  • the magnetic field range between HI and H2 is the measurement range of the TMR.
  • the magnetic resistance of the free layer magnetic moment of the magnetic enthalpy junction changes under the applied magnetic field.
  • the pinning layer magnetic moment direction 21 is fixed in a certain direction, and the magnetic free layer is applied to the first direction 23 and the second direction 24, and an applied magnetic field in the direction 22 is applied, In one direction 23 ⁇ , the free layer magnetic moment is turned to the outer field direction 22 in the direction of rotation 23A; when pointing in the second direction 24, the free layer magnetic moment is turned in the direction of the outer field in the direction of rotation 24A.
  • the angle between the direction of the free layer magnetic moment and the pinning layer magnetic moment 21 is reduced, and the magnetoresistance is reduced, as shown by 23B.
  • the angle between the free layer magnetic moment and the pinning layer magnetic moment 21 increases, and the magnetoresistance increases, as shown by 24E;
  • the magnetic free layer magnetic moment of the ⁇ element can be biased to the first direction 23 by the permanent magnet pair 23C integrated on the ⁇ , ⁇ chip, and the magnetic freedom of the MTJ element is performed by the permanent magnet pair 24C.
  • the layer magnetic moment is biased to the first direction 24.
  • the angle ⁇ between the permanent magnet pair 23C and the permanent magnet pair 24C and the pinning layer direction 21 can be changed, and the angle between the magnetic self-deposited layer magnetic moment and the pinning layer direction is changed.
  • FIG. 5 it is a schematic diagram of the working principle of a traditional push-pull full-bridge MTJ or GMR sensor. They are respectively composed of four MTJ or GMR magnetoresors, which are a first resistor 31R, a second resistor 32R, a third resistor 33R+, and a fourth resistor 34R -, respectively.
  • the first resistor 31R- is opposite to the fourth resistor 34R-, and the first magnetic moment direction 31A and the fourth magnetic moment direction 34A of the magnetic pinning layer are parallel; the second resistor 32R- is opposite to the third resistor 33R+, and the nail is The second magnetic moment direction 32A of the tie layer is parallel to the third magnetic moment direction 33A; and the first magnetic moment direction 31 A of the first resistor 31R- is opposite to the second magnetic moment direction 32A of the second resistor 32: R+ parallel.
  • the free layer first magnetic moment direction 31B, the second magnetic moment direction 32B, the first ⁇ : magnetic moment direction 33B, and the fourth magnetic moment direction MB of the four resistors 31, 32, 33, 34 The direction of the magnetic moment points in the same direction and is perpendicular to the direction of the magnetic moment of the pinning layer.
  • the resistance of the adjacent two bridge arms becomes larger or smaller, respectively, and the two resistances of the opposite two bridge arms increase or decrease at the same time. That is, a cone-wound full-bridge magnetic field sensor is constructed.
  • the magnetic poles of the four resistors have different magnetic moment directions, and it is inconvenient to use a single chip to make a push-pull full bridge. Only a multi-chip package or a laser local heating auxiliary annealing method can be used to make a single unit. Chip push-pull full-bridge magnetic field sensor.
  • FIG. 6 it is a schematic diagram of the working principle of a single-chip push-pull full-bridge magnetic field sensor. They are respectively composed of four MTJ or GMR magnetoresors, which are a first resistor 4 iR1, a second resistor 42R2, a third resistor 43R2, and a fourth resistor 44: R_1.
  • the magnetic free layers of the two magnetoresistive elements located at opposite positions have the same magnetic moment direction, and the magnetic moment direction of the magnetic free layer of each magnetoresistance is the same as the magnetic moment direction of the magnetic pinning layer, and is located adjacent to each other.
  • the magnetic moment direction of the magnetic free layer of the two magnetoresistive elements at the position is the same as the angle formed by the magnetic moment direction of the magnetic pin layer, and the magnetic moment of the magnetic free layer of the two magnetoresistive elements located at adjacent positions The direction is different.
  • the pinning layer magnetic moment directions 41A, 42A, 43 A, 44A having four resistors are parallel to each other and point in the same direction.
  • which number A resistor 4iR1 is opposite to the fourth resistor 44R1
  • the first magnetic moment direction 41B of the magnetic self-twist layer is parallel to the fourth magnetic moment direction 44 ⁇ , and is opposite to the first direction 41 ⁇ of the pinning layer and the fourth direction 44 ⁇ of the pin 3 ⁇ 4 layer.
  • the positive direction is at an angle of 45 degrees; the second resistor 42R2 is opposite to the third resistor 43R2, and the second magnetic moment direction 42 ⁇ of the free layer is parallel to the third magnetic moment direction 43 ⁇ , and is parallel to the second direction of the pinning layer 42 ⁇ ,
  • the positive direction of the third direction 43 ⁇ of the pinning layer is at an angle of 45 degrees; the first magnetic moment direction 41 B of the first resistor 41 R1 and the second magnetic moment direction 42 ⁇ of the second resistor 42R2 are perpendicular to each other.
  • the pinning direction 45 of the full bridge magnetic field sensor is the same as the direction of the nail ft layer of the four resistors, and the sensitive direction 46 is perpendicular to the pinning direction 45.
  • the magnetic resistance of the magnetic pinning layers of the four resistors in the single-chip push-pull full-bridge magnetic field sensor is different, so that it can be passed on a single chip.
  • a single process directly forms a push-pull full-bridge magnetic field sensor without the need for a multi-chip packaging process and without the need for laser-heated local-assisted thermal annealing.
  • a GMR or MTj component can be biased with its own shape anisotropy to the free layer magnetic moment.
  • Typical shapes can be elliptical, rectangular, diamond, and other shapes.
  • the long axis direction is usually the shape anisotropy easy axis direction, that is, the magnetic anisotropy is easy axis direction. It is possible to change its magnetic anisotropy by adjusting the length-to-axis ratio of its shape, thereby changing its input and output characteristics.
  • the first resistor 41 and the second resistor 42 of the adjacent two bridge arms; the third resistor 43 and the fourth resistor 44 become larger respectively.
  • the two resistances of the opposite two bridge arms increase or decrease, which constitutes a push-pull full-bridge magnetic field sensor.
  • an external magnetic field in the positive direction of the sensitive direction 46 is applied, and the first layer 41B, the second direction 42B, the third direction 43:B, and the fourth direction 44B of the free layer are respectively transferred to the first direction 41C of the new free layer. , 42C, 43C, 44C.
  • the corresponding first and fourth resistors are changed from :R_1 to Rl - ⁇ - A :R_, and the second and third resistors are changed from R2 to R2-A :R_. Then the output is
  • the free-form magnetic moment of the push-pull full bridge is biased by using a chip-shaped permanent magnet integrated on the chip.
  • the sheet-like permanent magnet in the chip is magnetized by an external magnetic field in the direction 50, and after the external magnetic field is removed, the slab-shaped permanent magnet generates a magnetic field along the axis direction of the magnet, that is, perpendicular to the boundary direction, and is positive
  • the negative direction edge is determined by the angle between the outer field and the outer field of the magnetization, and the angle with the magnetization direction 57 is less than 90 degrees.
  • the bias magnetic field generated by the pair of sheet-like permanent magnets 51, 53 is directed to the right along its axis.
  • the first ⁇ : resistor 43 is biased from the ffl layer to the correct direction.
  • the sheet-shaped permanent magnet pair 5 K 52; 54, 56; 55, 56 biases the first resistor 41, the second resistor 42, and the fourth resistor 44, respectively.
  • FIG. 9 it is a schematic diagram of the biasing of the magnetic field generated by the current conductor integrated in the chip.
  • Current wire 57, 58, 59 are located directly above the resistor to be biased, and perpendicular to the direction in which the bias is required, then a bias current is applied between Bias and Gnd, and the magnetic field generated by the current biases the free layer magnetic moment of the resistor. Set to the preset direction.
  • the biasing method of the free layer magnetic moment may also be performed by biasing the magnetic resistance of the magnetic free layer from the magnetic coupling direction of the magnetic pinning layer. Or
  • the magnetic moment direction of the magnetoresistive free layer is biased by depositing a magnetic layer on the magnetic self-twist layer and utilizing its weak antiferromagnetic coupling with the magnetic free layer.
  • a four-pole magnetoresist (41, 42, 43, 44) constitutes a push-pull full bridge, in which the pinning direction 45 is vertical, the sensitive direction is 46, and the magnetization direction of the permanent magnet is 57 horizontally to the right.
  • the free layer of the four magnetoresistors is a round shape, and the free layer magnetic moment is along the magnetic easy axis direction, that is, the long axis direction of the ellipse without an external bias field.
  • sheet-like permanent magnet pairs (61, 62, 63, 64) integrated in the chip are placed.
  • the opposite side of the sheet-like permanent magnet can be designed in a different shape such that it has an oblique angle ⁇ with respect to the vertical direction. Adjusting the corner angle can change the direction of the free layer magnetic moment of the resistor. In order to adjust the performance of the sensor, the normal corner angle is between 30 degrees and 60 degrees, and the full bridge magnetic field sensor with 45 degrees is the best. It is usually possible to change the direction of the full-bridge magnetic field sensor pinning layer 45, the sheet magnet permanent magnetization direction 67, and the relative orientation of the magnetic resistance axes of the four resistors to adjust the response. In general, the sensor response can be adjusted in three ways:
  • Changing the shape of the magnetic free layer of the sensor resistance can change its anisotropy and adjust the easy axis direction of the sensor, that is, for the long axis direction of the south circle shape, for the long side direction of the rectangle.
  • the initial magnetization direction 65 of the sheet-like permanent magnet of the sensor is changed.
  • FIG. 1 it is a structural schematic diagram of a specific implementation of a single-chip push-pull full-bridge sensing crying device.
  • the pinning direction of the sensor is 45, and the sensitive direction is 46.
  • Each of the resistors that make up the push-pull full bridge is formed by a series of magnetic tunnel junction sensing elements connected in series.
  • Each of the magnetic tunnel junction elements has an elliptical shape and is biased with a sheet-like permanent magnet.
  • the pad 65 of the chip is arranged to connect a plurality of leads which can be connected by lead wires to the package lead frame and/or the ASIC integrated circuit.
  • FIG 12 it is the final output characteristic of the push-pull full-bridge structure shown in Figure 11.
  • the push-pull half-bridge magnetic field sensor 80 is composed of two magnetoresistors, each of which consists of one or more GMR or MTJ elements connected in series, each of which may be elliptical or rectangular, diamond shaped to utilize its shape and orientation. opposite sex.
  • the first resistor 81 R ′′ is the same as the pinning layer magnetic moment first direction 81A and the second direction 83A of the second resistor 83R2, and is the same as the pinning direction 85, the first resistor 81 R′′, and the second resistor 83R
  • the free layer magnetic moment first direction 81B, the second direction 83B and the magnetic pinning layer have the same angle of the angle formed by the magnetic moment direction, and the first direction 81B and the second direction 83E; the direction is different, in the optimal case
  • the first layer of the free layer magnetic moment ⁇ 8 IB and the first direction of the pinning layer magnetic moment 81 A are 45 degrees
  • the angle of 83A in one direction is 45 degrees.
  • a bias voltage is applied between Bias and GND.
  • the first resistor 81R1 is increased, and the second resistor 83R2 is decreased, so that the output chirp is reduced, thereby forming a push-pull.
  • Half bridge magnetic field sensor When an external magnetic field in the sensitive direction 86 is applied, the first resistor 81R1 is increased, and the second resistor 83R2 is decreased, so that the output chirp is reduced, thereby forming a push-pull.
  • an embodiment of a push-pull half-bridge magnetic field sensor As shown in Figure 14, an embodiment of a push-pull half-bridge magnetic field sensor.
  • the chip resistors are integrated on the chip, and the first resistor 81 R1 and the second resistor 83R2 are biased such that the free layer magnetic moment first direction 81B and the second direction 83 ⁇ point in a certain direction.
  • the pinning layers of the two resistors are vertically upward, the magnetic easy-to-axis direction of the magnetoresistive element is upward, and the direction of the biasing magnetic field generated by the pair of sheet-shaped permanent magnets is horizontally to the right, and the sensitive direction is horizontal.
  • FIG. 5 it is another embodiment of a push-pull half-bridge magnetic field sensor.
  • the first resistor 81R1 and the second resistor 83R2 are biased from the chip-shaped permanent magnet pair integrated on the chip so as to be directed from the ffl layer magnetic moment first direction 81B and the second direction 83B to a certain direction.
  • the pinning layers of the two resistors are vertically upward, the magnetic easy-to-axis direction of the magnetoresistive elements is vertically upward, and the biasing magnetic field generated by the sheet-shaped permanent magnets is vertically upward, and the sensitive direction is horizontal.

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Description

单一芯片桥式磁场传感器及其制备方法 技术领域
本发明涉及 GM R、 MTJ桥式传感器的设计和制备方法， 特别是一种单一芯； t的桥式磁场传 感器， 刺备方法可以用于在单一磁性薄膜上制作半桥、 全桥磁性传感器。
背景技术
磁性隧道结传感器 （M:TJ,Magiietic Tunel Junction) 是近年来幵始工业应用的新型磁电阻效应 传感器， 它利用的是磁性多层膜材料的隧道磁电阻效应 (TMR , Tunnel Magnetoresistance),主 要表现在磁性多层膜材料中随着外磁场大小和方向的变化,磁性多层膜的电阻发生明显变 化， 它比之前所发现并实际应用的 AMR (各向异性磁电阻效应)、 具有更大的电阻变化率,同 时相对于霍尔效应材料具有更好的温度稳定性. MTJ 磁性传感器具有电阻变化率大， 输出信 号幅值大， 电阻率高， 功耗低， 温度稳定性高的优点。 用 MTJ 制成的磁场测量器件,比 AMR、 GMR、 霍尔器件具有灵敏度更高、 功耗更低、 线性更好、 动态范围更宽、 温度特性 更好， 抗千扰能力更强的优点。 此外 MTJ 还能方便的集成到现有的芯片微加工工艺当中， 便于制成体积很小的集成磁场传感器。
推挽桥式传感器具有比单电阻、 参考电阻桥式传感器更高的灵敏度， 同时具有温度 偿功 能， 能够抑制温度漂移的影响。 传统的推挽式桥式传感器要求相邻两个桥臂电阻中的磁性遂 道结的钉扎层磁矩方向相反， 而通常沉积在同一硅片上的磁性璲道结 ΜΤ,ί, 由于其磁矩翻转 所需要的磁场强度大小相同， 因而在同一个硅片上的磁电阻钉扎层磁矩通常都相同。 这使得 制作推挽桥式传感器存在很大困难。 目前制作推挽留桥式传感器的方法主要有： 采用两次成 膜工艺， 分两次分别沉积钉扎层方向相反的 MTJ 元件， 这使得其制作工艺复杂， 同时第二 次工艺进行退火时会明显影响第一次沉积的薄膜。 这使得前后两次成膜的一致性差， 导致桥 式传感器不同桥臂的电阻不相同， 影响传感器的整体性能。
多芯片封装技术： 通常从同一硅片或是不同硅片取两个一致性好的磁电阻， 这两个磁电阻的 敏感方向相同 （钉扎层方向）， 然后将其中一个相对另一个磁电阻翻转 180 度进行多芯片封 装， 构成推挽式半桥。 这样的结果是能够实现推挽式半桥的功能， 即提高了检測灵敏度， 具 有温度 偿功能， 但是另一方面多芯片封装， 封装尺寸大， 生产成本高： 实际封装时不能严 格的进行 1 80度翻转， 即两个电阻的灵敏度方向不是严格的相差 180度， 使得两个电阻随外 场变化的输出特性不相同， 出现灵敏度不同， 存在比较大的偏置电压等不对称问题， 这样在 实际应用中就会带来新的问题。
激光加热辅劭磁畴局部翻转法： 通常在硅片上制备 GMR、 MTJ全桥时， 采用将 GMR、 MTJ 硅片在同一强磁场中退火来使不同桥臂的钉扎层磁矩方向相同。 之后采用激光对硅片进行局 部加热辅助磁矩翻转， 使得桥式传感器相邻桥臂的钉扎层磁矩方向相反， 从而实现单一硅片 的桥式传感器。 但是激光加热辅助磁畴翻转的方法需要专用设备， 设备昂贵， 增加了工艺复 杂度， 同时激光加热所制得的桥式传感器， 其各桥臂的电阻一致性也无法得到保证。
从以上可以看出， 现有的单一芯 j†桥式传感器都存在整体性能无法保证， 生产成本高等缺 点。
发明内容
本发明的目的是提供一种单一芯片桥式磁场传感器及其制备方法， 可以方便的在单一芯片上 制备全桥磁场传感器和半桥磁场传感器。
为达到上述目的， 本发明提供了一种单一芯片全桥磁场传感器， 包括四个磁电阻元件， 其中 每个磁电阻元件 ffl—个或多个 GMR或 MTJ 传感元件串联组成， 传感元件由自旋姆构成， 该传感元件包括一磁性自由层和一磁性钉扎层； 所有磁电阻元件的磁性钉扎层的方向设置在 相同的一个方向上； 位于相对位置的两个磁电阻元件的磁性自由层的磁矩方向相同， 每个磁 电阻的磁性自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角相同， 位于相邻位置的 两个磁电阻元件的磁性自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角的角度相 同， 且位于相邻位置的两个磁电阻元件的磁性自由层的磁矩方向不相同。
本发明第二方面提供一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联构成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 磁电阻元件具有磁性自由层的磁矩方向指向其磁性易轴方向的形状。
本发明第三方面提供一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 在 该全桥磁场传感器上集成设置一用于将其磁电阻自由层的磁矩方向偏置的磁体。
本发明第四方面提供一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 ΜΤ,ί 传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 在 该全桥磁场传感器上集成设置一用干将其磁电阻自由层的磁矩方向偏置的的电流线， 所述电 流线的电流方向与 MTJ或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
本发明第五方面提供一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 通 过磁性自由层与磁性钉扎层的奈耳耦合场来将其磁电阻自 ώ层的磁矩方向偏置。
本发明第六方面提供一种単一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 通 过在磁性自由层沉积一磁性层， 并利用其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自 由层的磁矩方向偏置。 本发明第七方面提供一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 通 过权利要求 8-12方法中的一种或多种组合， 将其磁电阻自由层的磁矩方向进行偏置。
本发明还提供一种单一芯片半桥磁场传感器， 包括两个磁电阻元件， 其中每个磁电阻元件由 一个或多个 GMR 或 MTJ传感元件串联组成， 传感元件由自旋阀构成， 该传感元件包括一 磁性自由层和一磁性钉扎层； 磁电阻元件的磁性钉扎层的方向设置在相同的一个方向上， 两 个磁电阻元件的磁性自由层的磁矩方向不相同； 两个磁电阻元件的磁性自由层的磁矩方向与 其磁性钉扎层的磁矩方向所成的夹角相同。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 磁电阻 元件具有磁性自由层的磁矩方向指向其磁性易轴方向的形状。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 在该半 桥磁场传感器上集成设置一用于将其磁电阻自由层的磁矩方向偏置的磁体。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 在该半 桥磁场传感器上集成设置一用于将其磁电阻自由层的磁矩方向偏置的的电流线， 所述电流线 的电流方向与 MTJ或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过磁 性自由层与磁性钉扎层的奈耳耦合场来将其磁电阻自由层的磁矩方^偏置。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过在 磁性自由层沉积一磁性层， 并利用其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自由层 的磁矩方向偏置。
本发明还提供一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ传感 元件分别串联成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过权 利要求 19-23方法中的一种或多种组合， 将其磁电阻自由层的磁矩方向进行偏置。
附图说明
附图 1是磁隧道结 （MTJ) 的结构示意图。
附图 2是理想的磁隧道结磁场电阻输出特性示意图。
附图 3是在外加垂直于钉扎层方向的磁场作用下， 自由层与钉扎层正向成不同角度时， 自由 层磁矩转动与电阻变化示意图。
附图 4是采 ¾在磁电阻元件上集成设置的片状永磁体对磁电阻元件的磁性自由层进行偏置示 意图
附图 5是传统的推挽式全桥 MTJ或 GMR传感器的工作原理示意图。
附图 6是一种单一芯片推挽式全桥磁场传感器的工作原理示意图。
附图 7是外加一沿敏感方向的外磁场， 各桥臂的电阻自由层磁矩转动示意图。
附图 8是采用集成于芯片上的永磁片对推挽全桥的自 ώ层磁矩迸行偏置示意图。
附图 9所示， 是采用集成于芯片内的电流导线产生的磁场进行偏置的示意图。
附图 10所示， 是一种优选的推挽全桥磁场传感器实施方案示意图。
附图 11所示， 一种具体实施的单一芯片推挽全桥结钩示意图。
附图 12所示， 是图 l i所示推挽全桥的输出特性。
附图 i3所示， 是一种单一芯片推挽半桥磁场传感器原理图。
附图 14所示， 是一种推挽半桥磁场传感器的实施例。
附图 15所示， 是另一种推挽半桥磁场传感器的实施例。
附图 16所示， 是一种推挽半桥磁场传感器的实施例的局部结构放大示意图。
附图 17所示， 是另一种推挽半桥磁场传感器的实施例的局部结构放大示意图。
具体实施方式
本发明提供一种单一芯片全桥磁场传感器， 其包括四个磁电阻元件， 其中每个磁电阻元件 ώ 一个或多个 GMR或 MTJ 传感元件串联组成， 传感元件 ώ自旋阀构成， 该传感元件包括一 磁性自由层和一磁性钉扎层； 磁电阻元件的磁性钉扎层的方向设置在相同的一个方向上； 位 于相对位置的两个磁电阻元件的磁性自由层的磁矩方向相同， 每个磁电阻的磁性自由层的磁 矩方向与其磁性钉扎层的磁矩方向所成的夹角相同， 位于相邻位置的两个磁电阻元件的磁性 自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角的角度相同， 且位于相邻位置的两 个磁电阻元件的磁性自由层的磁矩方向不相同。
磁电阻元件具有磁性自由层的磁矩方向指向其磁性易轴方向的形状， 特别地形状可以是椭 圆， 长方形， 菱形。
一永磁体集成设置在该全桥磁场传感器上， ^于将其磁电阻自由层的磁矩方向偏置。
一电流线集成设置在该全桥磁场传感器上， 用于将其磁电阻自由层的磁矩方向偏置， 电流线 的电流方向与 MTJ或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
通过磁性自由层与磁性钉扎层的奈耳耦合场来将其磁电阻自由层的磁矩方向偏置。
通过在磁性自由层上沉积一磁性层， 并利用其与磁性自由层之间的弱反铁磁耦合来将其磁电 阻自由层的磁矩方向偏置。 一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 磁电阻元件具有磁性 自由层的磁矩方向指向其磁性易轴方向的形状。
一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 在该全桥磁场传感器 上集成设置一用于将其磁电阻自由层的磁矩方向偏置的磁体。
一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以钩成一全桥磁场传感器： 在该全桥磁场传感器 上集成设置一用于将其磁电阻自由层的磁矩方向偏置的的电流线， 电流线的电流方向与 ΜΤ,ί 或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 通过磁性自由层与磁 性钉扎层的奈耳耦合场来将其磁电阻自 层的磁矩方向偏置。
一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器； 通过在磁性自由层沉 积一磁性层， 并利 其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏 置。
一种单一芯片全桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感元件分别串联 成四个磁电阻元件， 将四个磁电阻元件连接以构成一全桥磁场传感器： 通过上述方法中的一 种或多种组合， 将其磁电阻自 ώ层的磁矩方 ^进行偏置。
本发明还提供一种单一芯片半桥磁场传感器， 其包括两个磁电阻元件， 其中每个磁电阻元件 由一个或多个 GMR或 MTJ传感元件串联组成， 传感元件由自旋阀构成， 该传感元件包括 一磁性自由层和一磁性钉扎层； 磁电阻元件的磁性钉扎层的方向设置在相同的一个方向上， 两个磁电阻元件的磁性自由层的磁矩方向不相同； 两个磁电阻元件的磁性自由层的磁矩方向 与其磁性钉扎层的磁矩方向所成的夹角相同。
磁电阻元件具有磁性自由层的磁矩方向指向其磁性易轴方向的形状， 特别地形状可以是椭 醫， 长方形， 菱形。
一磁体集成设置在该全桥磁场传感器上， 用于将其磁电阻自由层的磁矩方向偏置。
一电流线集成设置在该全桥磁场传感器上， 用于将其磁电阻自由层的磁矩方向偏置的的， 电 流线的电流方向与 MTJ或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
通过磁性自 ώ层与磁性钉扎层的奈耳耦合场来将其磁电阻自由层的磁矩方向偏置。
通过在磁性自由层沉积一磁性层， 并利用其与磁性自由层之间的弱反铁磁耦合来将其磁电阻 自由层的磁矩方向偏置。
一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 磁电阻元件具有磁性 自由层的磁矩方向指向其磁性易轴方向的形状。
一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR 或 MTJ传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器： 在该半桥磁场传感器 上集成设置一用于将其磁电阻自由层的磁矩方向偏置的磁体。
种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 在该半桥磁场传感器 上集成设置一用于将其磁电阻自由层的磁矩方向偏置的的电流线， 电流线的电流方向与 MTJ 或 GMR磁电阻元件的磁性钉扎层的磁矩方向相同。
一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过磁性自由层与磁 性钉扎层的奈耳耦合场来将其磁电阻自由层的磁矩方向偏置。
一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过在磁性自 ώ层沉 积一磁性层， 并利 ^其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏 置。
一种单一芯片半桥磁场传感器的制备方法， 将一个或多个 GMR或 MTJ 传感元件分别串联 成两个磁电阻元件， 将两个磁电阻元件连接以构成一半桥磁场传感器； 通过上述方法中的 种或多种组合， 将其磁电阻自由层的磁矩方向进行偏置。
如图 〗 所示， 磁遂道结 （ΜΤ,ί) 的结构由纳米级多层膜组成： 了 层 1 , 磁性被钉扎层 2, 非磁性绝缘层 3 , 磁性自由层 4。 磁性被 T扎层 2的磁矩方向如 5所示。 磁性自由层 4的磁 矩方向如 6所示。 磁性被 T扎层 2的磁矩方向 5与磁性自由层 4的磁矩方向 6相互垂直。 磁 性自由层 4的磁矩方向 6随着外加磁场 7的大小和方向的改变而变化。
隨道结磁阻效应 （TMR) 的工作原理， 磁隧道结 MTJ的磁阻随着磁性自由层 4 的磁矩方向 6与磁性被钉礼层 2的磁矩方向 5的夹角的变化而变化。 于磁性被钉¾层的磁矩方向被钉 扎层钉扎到磁性钉扎层方向上， 因此， 实际上隧道结 TMR的磁阻隨着磁性自由层 4的磁矩 方向 6与磁性钉扎层 1的磁矩的夹角的变化而变化。
如图 2所示， 当外加磁场 7的方向与被钉扎层 2的磁矩方向 5平行^, 同时外加磁场的强度 大于 HI时， 磁性自由层 4的磁矩方 ^与外加磁场 7的方向平行， 进而与磁性被钉扎层 2的 磁矩方向 5平行， 如 8所示， 这时隧道结 TMR的磁阻最小。 当外加磁场 7的方向与被钉扎 层 2的磁矩方向 5反平行时， 同时外加磁场的强度大于 H2时， 磁性自由层 4的磁矩方向与 外加磁场 7的方向反平行， 进而与磁性被钉礼层 2的磁矩方向 5反平行， 如 9所示， 这时璲 道结 TMR的磁阻最大。 HI与 H2之间的磁场范围就是 TMR的测量范围。
如图 3所示, 是当磁燧道结的自由层磁矩方向在外加磁场情况下磁电阻变化的情况。 对于一 个 MTJ元件， 其钉扎层磁矩方向 21固定在一个确定的方向上， 其磁性自由层在指向第一方 向 23、 第二方向 24时， 外加一沿方向 22的外加磁场， 剣指向第一方向 23 ^ , 自由层磁矩 沿旋转方向 23A转向外场方向 22 ; 指向第二方向 24时， 自由层磁矩沿旋转方向 24A转向 外场方向。 則对于第一方向 23 , 其自由层磁矩方向与钉扎层磁矩 21 的指向夹角减小， 磁电 阻减小， 如 23B所示。 对于第二方向 24, 其自由层磁矩方^与钉扎层磁矩 21的指向夹角增 大， 磁电阻增大， 如 24E;所示。 如图 4所示， 可以采用集成于 ΜΤ、ί芯片上的永磁片对 23C 将 ΜΓΠ元件的磁性自由层磁矩偏置到第一方向 23 , 采用永磁片对 24C将 MTJ元件的磁性 自由层磁矩偏置到第一方向 24。 同时可以改变永磁片对 23C、 永磁片对 24C 与钉扎层方向 21的夹角 Θ , 改变磁性自 ώ层磁矩与钉扎层方向的角度。
如图 5 所示， 是传统的推挽式全桥 MTJ 或 GMR传感器的工作原理示意图。 分别由四个 MTJ或 GMR磁电阻组成， 分别是第一电阻 31R、 第二电阻 32R十、 第三电阻 33R+、 第四电 阻 34R -。 其中第一电阻 31R-与第四电阻 34R-相对， 其磁性钉扎层的第一磁矩方向 31A和第 四磁矩方向 34A 相平行； 第二电阻 32R-与第三电阻 33R+相对， 其钉扎层的第二磁矩方向 32A 与第三磁矩方向 33A 相同向平行； 且第一电阻 31R-的第一磁矩方向 31 A 与第二电阻 32:R+的第二磁矩方向 32A相反向平行。 在没有外加磁场的情况 T, 四个电阻 31、 32、 33、 34的自由层第一磁矩方向 31B、 第二磁矩方向 32B、 第— Ξ:磁矩方向 33B、 第四磁矩方向 MB 磁矩方向指向同一方向， 并与钉扎层磁矩方向垂直。 隨外加沿全桥 ΜΤ、ί 或 GMR敏感方向 35 的外磁场， 相邻的两个桥臂的电阻分别变大或变小， 相对的两个桥臂的两个电阻同时增 大或减小， 即构成一个锥挽式全桥磁场传感器。 从图中可以看出， 四个电阻的磁性钉 ¾层磁 矩方向不同， 不便干采用单一芯片制成推挽全桥， 只能采用多芯片封装或是激光局部加热辅 助退火的方法制成单一芯片推挽全桥磁场传感器。
如图 6 所示， 是一种单一芯片推挽式全桥磁场传感器的工作原理示意图。 分别由四个 MTJ 或 GMR磁电阻组成， 分别是第一电阻 4 iRl、 第二电阻 42R2、 第三电阻 43R2、 第四电阻 44:R_1。 位于相对位置的两个磁电阻元件的磁性自由层的磁矩方向相同， 每个磁电阻的磁性 自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角相同， 位于相邻位置的两个磁电阻 元件的磁性自由层的磁矩方向与其磁性钉钆层的磁矩方向所成的夹角的角度相同， 位于相 邻位置的两个磁电阻元件的磁性自由层的磁矩方向不相同。 作为一种最优的情况， 特别地有 四个电阻的钉扎层磁矩方向 41A、 42A、 43 A , 44A 相互平行， 并指向同一个方向。 其中第 一电阻 4iRl 与第四电阻 44R1 相对， 其磁性自 ώ层的第一磁矩方向 41B 和第四磁矩方向 44Β相平行， 并与钉扎层第一方向 41Α、 钉¾层第四方向 44Α的正方向成 45度夹角； 第二 电阻 42R2与第三电阻 43R2相对， 其自由层的第二磁矩方向 42Β与第三磁矩方向 43Β相同 向平行， 并与钉扎层第二方向 42Α、 钉扎层第三方向 43Α的正方向成 45度夹角； ϋ第一电 阻 41 R1的第一磁矩方向 41 B 与第二电阻 42R2的第二磁矩方向 42Β相互垂直。 此全桥磁场 传感器的钉扎方向 45与 4个电阻的钉 ft层方向相同， 其敏感方向 46与钉扎方向 45垂直。 丛图中可以看出， 与图 5传统的推挽式全桥不同， 该单一芯片推挽全桥磁场传感器中四个电 阻的磁性钉扎层磁矩方向不同， 因此可以在单一芯片上， 通过一次工艺直接形成推挽全桥磁 场传感器， 而不需要采用多芯片封装工艺， 以及不需要进行激光加热局部辅助热退火。
GMR或 MTj元件， 可以利用其本身的形状各向异性对其自由层磁矩进行偏置。 通常的形状 可以是橢圆形， 长方形， 菱形， 以及其它形状。 在各种形状当中， 通常其长轴方向为形状各 向异性易轴方向， 也就是磁各向异性易轴方向。 可以， 通过调整其形状的长短轴比， 改变其 磁各向异性， 进而改变其输入输出特性。 如图 Ί所示， 在夕卜加一沿敏感方向 46 的外磁场， 则相邻的两个桥臂的第一电阻 41、 第二电阻 42; 第三电阻 43、 第 4 电阻 44分别变大或变 小， 相对的两个桥臂的两个电阻同 增大或减小， 即构成一个推挽式全桥磁场传感器。 特别 地， 外加一沿敏感方向 46 正向的外磁场， 则自由层第一方向 41B、 第二方向 42B、 第三方 向 43:B、 第四方向 44B分别转到新的自由层第一方向 41C、 42C、 43C、 44C。 相应的第一、 第四电阻由 :R_1变为 Rl -ί- A :R_, 第二、 第三电阻分别由 R2变为 R2- A :R_。 则输出为
署 2善 ( +
R2 + Rl ' bias
理想情况下， 其中初始值 R1=R2> Δ R,则化简后可得
R 2 - R l D as
即实现推挽式全桥输出。
如图 8所示， 是采用集成于芯片上的片状永磁体对推挽全桥的自由层磁矩进行偏置示意图。 采用一沿方向 50 的外磁场对芯片中的片状永磁体迸行充磁， 撤去外磁场后， 剣片状永磁体 产生一沿磁体对轴线方向， 即垂直于边界方向的磁场， 并且其正负方向沿与充磁时外场方^ 夹角决定， 其与充磁方向 57的夹角小于 90度。 如图中所示， 由片状永磁体对 51、 53产生 的偏置磁场沿其轴线向右方向。 使第 Ξ:电阻 43 的自 ffl层偏置到正确的方向。 同样， 片状永 磁体对 5 K 52； 54、 56； 55、 56 分别对第一电阻 41， 第二电阻 42, 第四电阻 44 进行偏 置。
如图 9 所示， 是釆用集成于芯片内的电流导线产生的磁场进行偏置的示意图。 电流导线 57、 58、 59位于需要偏置的电阻的正上方， 并与需要偏置的方向垂直， 则在 Bias和 Gnd之 间加一偏置电流， 则电流产生的磁场使电阻的自由层磁矩偏置到预置的方向上。 对自由层磁 矩的偏置方法， 还可以是通过磁性自由层与磁性钉扎层的奈耳耦合场来将其磁电阻自 ώ层的 磁矩方向时行偏置。 或是
通过在磁性自 ώ层上沉积一磁性层， 并利用其与磁性自由层之间的弱反铁磁耦合来将其磁电 阻自由层的磁矩方向进行偏置。
如图 ) 所示， 是一种优选的推挽全桥磁场传感器实施方案示意图。 由四个磁电阻 （41、 42、 43 , 44) 组成一推挽式全桥， 其中钉扎钉扎方向 45竖直向上， 敏感方向 46水平， 永磁 体的充磁方向 57 水平向右。 四个磁电阻的自由层为楠圆形， 其自由层磁矩在没有外加偏置 场的情况下沿磁性易轴方向， 即椭圆的长轴方向。 在构成全桥的磁电阻两边， 分别放置集成 于芯片内的片状永磁体对 （61、 62、 63、 64)。 片状永磁体相对的那一条边， 可以设计成不 同的形状， 使其相对垂直方向有一倾斜的角度 Θ , 调整该 Θ角可以改变电阻的自由层磁矩的 方向。 以调整传感器的性能， 通常的 Θ角在 30度〜 60度之间， 其中以 45度时构成的全桥 磁场传感器性能最好。 通常可以改变全桥磁场传感器钉扎层方向 45， 片状永磁体充磁方向 67, 以及四个电阻的磁性易轴方向的相对指向， 来调整其响应方式。 通常， 可以通过以 T三 种方法来调整传感器响应方式：
改变传感器电阻的磁性自由层的形状， 可以改变其各向异性， 以及调整传感器的易轴方向， 即对于楠圆形状的长轴方向， 对于长方形的长边方向。
改变传感器的片状永磁体的初始化充磁方向 65。
改变片状永磁体对的材料和厚度， 使其对电阻产生大小不同的偏置磁场， 以调整其饱和场。 如图 】1 所示， 是单一芯片推挽全桥传感哭器的一种具体实施的结构示意图。 传感器的钉扎 方向 45 , 敏感方向 46工。 其中组成推挽全桥的每一个电阻由一串磁隧道结敏感元件串联而 成。 每一磁隧道结元件采用橢圆形状， 并旦釆用片状永磁体进行偏置。 并且芯片的焊盘 65 设置成可以连接多条引线， 焊盘可以通过引线连接到封装引线框和 /或 ASIC集成电路上。 如 图 12所示， 是如图 11所示的推挽全桥结构的最终输出特性。
如图 13 所示， 是推挽半桥磁场传感器示意图。 该推挽半桥磁场传感器 80 由两个磁电阻组 成， 每个磁电阻由一个或多个 GMR或 MTJ 元件串联组成， 每个元件可以做成椭圆形或长 方形， 菱形， 以利用其形状各向异性。 其中第一电阻 81 R】， 与第二电阻 83R2的钉钆层磁矩 第一方向 81A、 第二方向 83A相同， 都同钉扎方向 85 相同， 第一电阻 81 R】， 与第二电阻 83R 的自由层磁矩第一方向 81B、 第二方向 83B与其磁性钉扎层的磁矩方向所成的夹角的 角度相同， 并且第一方向 81B 与第二方向 83E;方向不同， 最优情况下自由层磁矩第一方^ 8 IB与钉扎层磁矩第一方向 81 A的夹角为 45度， 自由层磁矩第二方向 83B与钉扎层磁矩第 一方向 83A的夹角为 45度。 在 Bias和 GND之间加一偏置电压， 当外加一沿敏感方向 86 的夕卜磁场时， 第一电阻 81R1增大， 第二电阻 83R2减小， 使输出 Λ 变小， 即构成一推挽半 桥磁场传感器。
如图 14 所示， 是一种推挽半桥磁场传感器的实施例。 图中采用集成于芯片上的片状永磁体 对， 对第一电阻 81 R1和第二电阻 83R2迸行偏置， 使其自由层磁矩第一方向 81B和第二方 向 83Β 指向确定的方向。 两个电阻的钉扎层方向竖直向上， 磁电阻元件的磁性易轴方向向 上， 片状永磁体对产生的偏置磁场方向水平向右， 则敏感方向水平。
如图 〗5 所示， 是另一种推挽半桥磁场传感器的实施例。 图中采用集成于芯片上的片状永磁 体对， 对第一电阻 81R1和第二电阻 83R2进行偏置， 使其自 ffl层磁矩第一方向 81B和第二 方向 83B 指向确定的方向。 两个电阻的钉扎层方向竖直向上， 磁电阻元件的磁性易轴方向 竖直向上， 片状永磁体对产生的偏置磁场充磁方向竖直向上， 则敏感方向为水平。
以上对本发明的特定实施例结合图示进行了说明， 很明显， 在不离幵本发明的范围和精神的 基础上， 可以对现有技术和工艺进行很多修改。 在本发明的所属技术领域中， 只要掌握通常 知识， 就可以在本发明的技术要旨范围內， 进行多种多样的变更。

Claims

权利要求：
1. 一种阜一芯片全桥磁场传感器， 包括四个磁电阻元件， 其中每个磁电阻元件由一个或多 个 GMR 或 MTJ传感元件串联组成， 其特征在于： 传感元件由自旋姆构成， 各传感元件包 括一磁性自由层和一磁性钉扎层， 所有磁电阻元件的磁性钉扎层的方向设置在相同的一个方 向上， 位于相对位置的每两个磁电阻元件的磁性自由层的磁矩方向相同， 每个磁电阻的磁性 自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角相同， 位于相邻位置的每两个磁电 阻元件的磁性自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角的角度相同， 且位于 相邻位置的每两个磁电阻元件的磁性自由层的磁矩方向不相同。
2. 如权利要求 i 所述的全桥磁场传感器， 其中， 磁电阻元件具有磁性自由层的磁矩方向指 向其磁性易轴方向的形状， 特别地形状可以是椭圆， 长方形， 菱形。
3. 如权利要求 1 所述的全桥磁场传感器， 还包括一集成设置在该全桥磁场传感器上的用于 将其磁电阻自由层的磁矩方向偏置的永磁体。
4. 如权利要求 1 所述的全桥磁场传感器， 还包括一集成设置在该全桥磁场传感器上的用于 将其磁电阻自由层的磁矩方向偏置的的电流线， 所述电流线的电流方向与 MTJ或 GMR磁 电阻元件的磁性钉扎层的磁矩方向相同。
5. 如权利要求 1 所述的全桥磁场传感器， 其中， 通过磁性自由层与磁性钉扎层的奈耳耦合 场来将其磁电阻自由层的磁矩方向偏置。
6. 如权利要求 1 所述的全桥磁场传感器， 其中， 通过在磁性自由层上沉积一磁性层， 并利 用其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏置。
7. 一种単一芯片全桥磁场传感器的制备方法， 其特征在于；
将一个或多个 GMR或 MTJ传感元件分别串联构成四个磁电阻元件， 将四个磁电阻元件 连接以构成一全桥磁场传感器： 磁电阻元件具有磁性自由层的磁矩方向指向其磁性易轴方^ 的形状。
8. 一种单一芯片全桥磁场传感器的制备方法， 其特征在于- 将一个或多个 GMR或 ΜΉ传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连 接以构成一全桥磁场传感器； 在该全桥磁场传感器上集成设置一用于将其磁电阻自由层的磁 矩方向偏置的磁体。
9.一种单一芯片全桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 MTJ传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连 接以构成一全桥磁场传感器； 在该全桥磁场传感器上集成设置一 ^于将其磁电阻自由层的磁 矩方向偏置的的电流线， 所述电流线的电流方向与 MTJ 或 GMR 磁电阻元件的磁性钉扎层 的磁矩方向相同。
10.一种单一芯片全桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 MTJ传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连 接以构成一全桥磁场传感器； 通过磁性自由层与磁性钉扎层的奈耳耦合场来将其磁电阻自由 层的磁矩方向偏置。
11.一种单一芯片全桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 MTJ传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连 接以构成一全桥磁场传感器； 通过在磁性自 ώ层沉积一磁性层， 并利 ]¾其与磁性自由层之间 的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏置。
12. 一种单一芯片全桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 ΜΉ传感元件分别串联成四个磁电阻元件， 将四个磁电阻元件连 接以构成一全桥磁场传感器； 通过权利要求 8-12 方法中的一种或多种组合， 将其磁电阻自 由层的磁矩方向进行偏置。
13. ·种单一芯片半桥磁场传感器， 包括两个磁电阻元件， 其中每个磁电阻元件由一个或多 个 GMR 或 MTj 传感元件串联组成， 其特征在于： 传感元件由自旋姆构成， 该传感元件包 括一磁性自由层和一磁性钉扎层； 所有磁电阻元件的磁性钉扎层的方向设置在相同的一个方 向上， 位于相邻位置的两个磁电阻元件的磁性自 层的磁矩方向不相同； 所述两个磁电阻元 件的磁性自由层的磁矩方向与其磁性钉扎层的磁矩方向所成的夹角相同。
1 如权利要求 13 所述的半桥磁场传感器， 其中， 磁电阻元件具有磁性自由层的磁矩方向 指向其磁性易轴方向的形状， 特别地形状可以是椭圆， 长方形， 菱形。
15. 如权利要求 13 所述的半桥磁场传感器， 还包括一集成设置在该全桥磁场传感器上的用 于将其磁电阻自由层的磁矩方向偏置的磁体。
16. 如权利要求 13 所述的半桥磁场传感器， 还包括一集成设置在该全桥磁场传感器上的 ¾ 于将其磁电阻自由层的磁矩方向偏置的的电流线， 所述电流线的电流方向与 MTJ 或 GMR 磁电阻元件的磁性钉扎层的磁矩方向相同》
17. 如权利要求 13 所述的半桥磁场传感器， 其中， 通过磁性自由层与磁性钉扎层的奈耳耦 合场来将其磁电阻自 层的磁矩方向偏置。
18. 如权利要求 13 所述的半桥磁场传感器， 其中， 通过在磁性自由层沉积一磁性层， 并利 用其与磁性自由层之间的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏置。
19. 一种单一芯片半桥磁场传感器的制备方法， 其特征在于；
将一个或多个 GMR或 MTJ传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 磁电阻元件具有磁性自 ώ层的磁矩方向指向其磁性易轴方向的 形状。
20. 一种单一芯片半桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 ΜΤ、ί传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 在该半桥磁场传感器上集成设置一 ffl于将其磁电阻自由层的磁 矩方向偏置的磁体。
21. ·种单一芯片半桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 MTJ传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 在该半桥磁场传感器上集成设置一 ^于将其磁电阻自由层的磁 矩方向偏置的的电流线， 所述电流线的电流方向与 MTJ或 GMR 磁电阻元件的磁性钉扎层 的磁矩方向相同。
22. 一种单一芯片半桥磁场传感器的制备方法， 其特征在于；
将一个或多个 GMR或 MTJ传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 通过磁性自由层与磁性钉扎层的奈耳稱合场来将其磁电阻自由 层的磁矩方向偏置。
23. 一种单一芯片半桥磁场传感器的制备方法， 其特征在干：
将一个或多个 GMR或 ΜΤ、ί传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 通过在磁性自由层沉积一磁性层， 并利 ^其与磁性自由层之间 的弱反铁磁耦合来将其磁电阻自由层的磁矩方向偏置。
24. —种单一芯片半桥磁场传感器的制备方法， 其特征在于：
将一个或多个 GMR或 MTJ传感元件分别串联成两个磁电阻元件， 将两个磁电阻元件连 接以构成一半桥磁场传感器； 通过权利要求 19-23方法中的一种或多种组合， 将其磁电阻自 由层的磁矩方向进行偏置。
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