JP6639509B2 - 改善されたプログラミング性及び低い読取り消費電力で磁場を検出するマグネティック・ロジック・ユニット(mlu)セル - Google Patents
改善されたプログラミング性及び低い読取り消費電力で磁場を検出するマグネティック・ロジック・ユニット(mlu)セル Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims description 120
- 238000003860 storage Methods 0.000 claims description 148
- 230000005415 magnetization Effects 0.000 claims description 138
- 230000004888 barrier function Effects 0.000 claims description 40
- 230000008878 coupling Effects 0.000 claims description 30
- 238000010168 coupling process Methods 0.000 claims description 30
- 238000005859 coupling reaction Methods 0.000 claims description 30
- 230000005294 ferromagnetic effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 9
- 239000002885 antiferromagnetic material Substances 0.000 claims description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 2
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- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000003302 ferromagnetic material Substances 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
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- 239000000696 magnetic material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
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- 238000004891 communication Methods 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005303 antiferromagnetism Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000010410 dusting Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0029—Treating the measured signals, e.g. removing offset or noise
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Description
プログラミング動作中に、記憶磁化をプログラムされた方向に整列させるステップと、
検出動作中に、プログラムされた方向の記憶磁化を有するMLUセルの抵抗を測定するステップと
を含み、
トンネル障壁層は、追加交換バイアス場の大きさが交換バイアス場の大きさとほぼ同じ大きさであるとともに反対方向であり、交換バイアス場を補償するために、追加電流を界磁線に通す必要がないように構成されている、MLUセルを動作させる方法に更に関する。
100 磁気センサ・デバイス
2 磁気トンネル接合
21 センス層
22 トンネル障壁層
23 記憶層
210 センス磁化
230 記憶磁化
231 第1の記憶強磁性層
232 第2の記憶強磁性層
233 記憶結合層
234 第1の記憶磁化
235 第2の記憶磁化
24 反強磁性記憶層、ピン止め層
3 電流線
31 加熱用電流
32 センシング電流
4 界磁線
41 プログラミング電流
42 プログラミング磁場
43 センス磁場電流
44 センス磁場
60 交換バイアス場
70 間接的交換結合
71 追加交換バイアス場
H 外部磁場
Hbias ヒステリシス・ループのずれ
R 磁気トンネル接合の抵抗
Ra 平均抵抗
TH 高閾値温度
TL 低閾値温度
Claims (10)
- 磁場を検出するマグネティック・ロジック・ユニット(MLU)セルであって、
記憶磁化を有する記憶層と、センス磁化を有するセンス層と、記憶層とセンス層の間のトンネル障壁層と、低閾値温度で記憶磁化をピン止めするとともに高閾値温度で記憶磁化を自由にするピン止め層とを含む磁気トンネル接合を備え、センス磁化は、低閾値温度及び高閾値温度で自由に整列させることが可能であり、
記憶層は、センス磁化が記憶磁化と逆平行又は平行に整列される傾向にあるように、センス層と磁気的に結合する交換バイアス場を誘導するMLUセルにおいて、
トンネル障壁層は、交換バイアス場に追加交換バイアス場を与えるようにトンネル障壁層とセンス層の間に間接的交換結合を発生させるように構成されている、
MLUセル。 - 記憶層は、交換バイアス場を誘導する記憶磁化を有する単一の強磁性層を備える、
請求項1に記載のMLUセル。 - 記憶層は、第1の記憶磁化を有する第1の強磁性層と、第2の記憶磁化を有する第2の記憶強磁性層と、第1の強磁性層と第2の強磁性層の間にRKKY結合をもたらす逆平行記憶結合層とを含む合成反強磁性体を備え、
第1の記憶磁化及び第2の記憶磁化の一方のモーメントは、他方のモーメントよりも大きく、他方のモーメントより大きいモーメントを有するほうの記憶磁化が、交換バイアス場を誘導する、
請求項1に記載のMLUセル。 - トンネル障壁層は、追加交換バイアス場が交換バイアス場と同じ大きさであるとともに反対方向であるように構成されている、
請求項1に記載のMLUセル。 - トンネル障壁層は、酸化物、窒化物又は酸窒化物を含有し、0.5nmから3nmの厚さを有する、
請求項1に記載のMLUセル。 - トンネル障壁層は、酸化アルミニウム又は酸化マグネシウムを含有するか、或いは酸化アルミニウム又は酸化マグネシウムから形成される、
請求項5に記載のMLUセル。 - 追加交換バイアス場の方向及び大きさは、トンネル障壁層に含まれる材料又はトンネル障壁層を形成する材料の酸化状態又は窒化状態を調整することによって調整可能である、
請求項1に記載のMLUセル。 - 追加交換バイアス場の方向及び大きさは、トンネル障壁層の厚さ、粗さ及び組成の中の一つ以上を調整することによって更に調整可能である、
請求項7に記載のMLUセル。 - 記憶磁化を有する記憶層と、センス磁化を有するセンス層と、記憶層とセンス層の間のトンネル障壁層と、低閾値温度で記憶磁化をピン止めするとともに高閾値温度で記憶磁化を自由にするピン止め層とを含む磁気トンネル接合を備え、センス磁化は、低閾値温度及び高閾値温度で自由に整列させることが可能であり、記憶層は、センス磁化が記憶磁化と逆平行又は平行に整列される傾向があるようにセンス層と磁気的に結合する交換バイアス場を導入し、トンネル障壁層は、交換バイアス場に追加交換バイアス場を与えるようにトンネル障壁層とセンス層の間に間接的交換結合を発生させるように構成されている、MLUセルを動作させる方法であって、
プログラミング動作中に、記憶磁化をプログラムされた方向に整列させるステップと、
検出動作中に、プログラムされた方向の記憶磁化を有するMLUセルの抵抗を測定するステップと、
を含み、
トンネル障壁層は、追加交換バイアス場が交換バイアス場と同じ大きさであるとともに反対方向であり、交換バイアス場を補償するために、追加電流を界磁線に通す必要がないように構成されている、
方法。 - 抵抗を測定するステップは、センス磁化を整列させることができるセンス磁場を発生させるように、MLUセルと磁気的に連通する界磁線にセンス磁場電流を通すステップと、電流線及び前記磁気トンネル接合にセンシング電流を通すステップとを含むことができる、
請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15290014.8A EP3045928B1 (en) | 2015-01-16 | 2015-01-16 | Magnetic logic unit (MLU) cell for sensing magnetic fields with improved programmability and low reading consumption |
EP15290014.8 | 2015-01-16 | ||
PCT/IB2015/059918 WO2016113619A1 (en) | 2015-01-16 | 2015-12-23 | Magnetic logic unit (mlu) cell for sensing magnetic fields with improved programmability and low reading consumption |
Publications (2)
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JP2018504782A JP2018504782A (ja) | 2018-02-15 |
JP6639509B2 true JP6639509B2 (ja) | 2020-02-05 |
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JP2017537502A Active JP6639509B2 (ja) | 2015-01-16 | 2015-12-23 | 改善されたプログラミング性及び低い読取り消費電力で磁場を検出するマグネティック・ロジック・ユニット(mlu)セル |
Country Status (5)
Country | Link |
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US (1) | US10330749B2 (ja) |
EP (1) | EP3045928B1 (ja) |
JP (1) | JP6639509B2 (ja) |
CN (1) | CN107209233B (ja) |
WO (1) | WO2016113619A1 (ja) |
Families Citing this family (3)
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EP3544014B1 (en) * | 2018-03-20 | 2020-07-15 | Crocus Technology S.A. | Mlu-based magnetic device having an authentication and physical unclonable function and authentication method using said mlu device |
FR3093176B1 (fr) * | 2019-02-26 | 2021-01-22 | Continental Automotive | Procédé d’autorisation de mise à jour d’un capteur magnétique pour moteur thermique avec immunité aux perturbations magnétiques |
CN110660424B (zh) * | 2019-09-10 | 2021-05-28 | 北京航空航天大学 | 自旋随机存储器及方法 |
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US20040184311A1 (en) * | 2003-03-18 | 2004-09-23 | Manish Sharma | Magnetic sensor |
US7270896B2 (en) * | 2004-07-02 | 2007-09-18 | International Business Machines Corporation | High performance magnetic tunnel barriers with amorphous materials |
EP1768840B1 (en) * | 2004-07-13 | 2014-09-03 | The Regents of The University of California | Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage |
FR2931011B1 (fr) * | 2008-05-06 | 2010-05-28 | Commissariat Energie Atomique | Element magnetique a ecriture assistee thermiquement |
EP2575135B1 (en) * | 2011-09-28 | 2015-08-05 | Crocus Technology S.A. | Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation |
CN103531707A (zh) * | 2012-07-03 | 2014-01-22 | 中国科学院物理研究所 | 磁性隧道结 |
KR101958940B1 (ko) * | 2012-07-30 | 2019-07-02 | 삼성전자주식회사 | 회전 전달 기반 논리 장치들을 제공하기 위한 방법 및 시스템 |
US9252710B2 (en) * | 2012-11-27 | 2016-02-02 | Headway Technologies, Inc. | Free layer with out-of-plane anisotropy for magnetic device applications |
EP2775480B1 (en) * | 2013-03-07 | 2018-11-14 | Crocus Technology S.A. | Self-referenced TAS-MRAM cell that can be read with reduced power consumption |
-
2015
- 2015-01-16 EP EP15290014.8A patent/EP3045928B1/en active Active
- 2015-12-23 WO PCT/IB2015/059918 patent/WO2016113619A1/en active Application Filing
- 2015-12-23 JP JP2017537502A patent/JP6639509B2/ja active Active
- 2015-12-23 CN CN201580073547.7A patent/CN107209233B/zh not_active Expired - Fee Related
- 2015-12-23 US US15/543,619 patent/US10330749B2/en active Active
Also Published As
Publication number | Publication date |
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EP3045928A1 (en) | 2016-07-20 |
EP3045928B1 (en) | 2017-07-12 |
US10330749B2 (en) | 2019-06-25 |
WO2016113619A1 (en) | 2016-07-21 |
US20170371008A1 (en) | 2017-12-28 |
CN107209233B (zh) | 2020-09-01 |
JP2018504782A (ja) | 2018-02-15 |
CN107209233A (zh) | 2017-09-26 |
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