WO2014002736A1 - 熱式空気流量センサ - Google Patents
熱式空気流量センサ Download PDFInfo
- Publication number
- WO2014002736A1 WO2014002736A1 PCT/JP2013/065912 JP2013065912W WO2014002736A1 WO 2014002736 A1 WO2014002736 A1 WO 2014002736A1 JP 2013065912 W JP2013065912 W JP 2013065912W WO 2014002736 A1 WO2014002736 A1 WO 2014002736A1
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- WIPO (PCT)
- Prior art keywords
- protective film
- flow sensor
- air flow
- thermal air
- sensor according
- Prior art date
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
- B81B7/0016—Protection against shocks or vibrations, e.g. vibration damping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
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- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
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- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
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- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
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- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
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- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
- G01P5/12—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables using variation of resistance of a heated conductor
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Definitions
- the present invention relates to a sensor for detecting a physical quantity, and particularly to a thermal air flow sensor.
- thermal sensor that is provided in an intake air passage of an internal combustion engine such as an automobile and measures the amount of intake air has become mainstream because it can directly detect the amount of mass air.
- an air flow sensor that forms a thin part by removing a part of the silicon substrate with a solution such as KOH is used. It has been attracting attention because of its high-speed response and the ability to detect backflow using the speed of response. Also, in recent years, for the purpose of reducing the parts of the board part (printed board, ceramic board, etc.), the air flow sensor is mounted on a lead frame, and a structure in which the outer peripheral part is molded with resin has been studied. Yes.
- the thickness of the detection element and the thickness of the adhesive there are variations in the thickness of the detection element and the thickness of the adhesive, and as a result, the mounting height of the semiconductor element mounted on the lead frame varies. As a result, the force applied from the insert piece or the contact distance with the insert piece changes depending on each product, and the allowable range of the pressing force of the insert piece is further reduced, leading to a decrease in product yield.
- An object of the present invention is to improve the reliability of a product in the case of resin sealing that partially exposes a part of a semiconductor element.
- a thermal air flow sensor of the present invention includes a thin portion, a heating resistor provided in the thin portion, and a temperature measuring resistor provided upstream and downstream of the heating resistor.
- Thermal air having a substrate, a protective film provided on the semiconductor substrate, and a resin that seals the semiconductor substrate, the resin having an exposed portion that partially exposes the region including the thin portion
- the protective film is provided so as to surround the heating resistor, and an outer peripheral end portion of the organic protective film is outside the thin portion and in the exposed portion.
- the present invention can improve the reliability of a product in the case of resin sealing that partially exposes a part of a semiconductor element.
- Configuration diagram of the sensor element before molding according to the first embodiment (a) Cross-sectional view when viewed from the side, (b) Surface view when viewed from directly above Configuration diagram of the sensor element after molding according to the first embodiment (a) Cross-sectional view when viewed from the side, (b) Surface view when viewed from directly above Schematic explanatory diagram of mold forming in the first embodiment Schematic explanatory diagram of mold resin flow-out in the first embodiment Configuration diagram of the sensor element before molding according to the second and third embodiments (a) Cross-sectional view when viewed from the side, (b) Surface view when viewed from right above Configuration diagram of the sensor element after molding according to the second embodiment (a) Cross-sectional view when viewed from the side of the heel, (b) Surface view when viewed from directly above Schematic explanatory diagram of mold forming in the second embodiment Schematic explanatory diagram of mold resin flow-out in the second embodiment Illustration of slit Configuration diagram of the sensor element after molding according to the third embodiment (a) Cross-sectional view when
- the thermal air flow sensor of the present invention will be described with reference to FIG.
- the thermal air flow sensor is provided with a housing 3 and a semiconductor package 2 in an intake pipe 5 for supplying intake air 1 to an internal combustion engine (not shown) of an automobile.
- the housing 3 includes a connector terminal 8 that is electrically connected to the semiconductor package 2 at one end, a flange portion 4 that fixes the housing 3 to the intake pipe 5, and a sub-passage 6 that takes in part of the intake air 1.
- the semiconductor package 2 is created by integrally molding the lead frame 10, the semiconductor substrate 20, the circuit element, and the temperature sensor with the mold resin 60. Further, the semiconductor package 2 has a region that is partially exposed without being covered with the mold resin 60 so that the flow rate detection unit 7 is exposed to the intake air.
- the flow rate detector 7 is provided in the sub-passage 6 and calculates the flow rate of the intake air 1 from the flow rate of the fluid flowing in the sub-passage 6.
- FIG. 1 is a configuration diagram of the sensor element before molding according to the first embodiment
- FIG. 2 is a configuration diagram of the sensor element after molding according to the first embodiment.
- the thermal air flow sensor has an insulating film and a resistor layer laminated on a semiconductor substrate 20 such as silicon, and potassium hydroxide (KOH) or the like is applied from the back side of the semiconductor substrate 20.
- the thin-walled portion 25 is formed by partially removing the heat-generating resistor 21, and the heating resistor 21, the upstream-side resistance temperature detector 22, and the downstream-side resistance temperature detector 23 are formed on the thin-walled portion 25.
- the temperature of the heating resistor 21 is feedback-controlled so that the temperature of the heating resistor 21 is higher than the temperature of the intake air amount 1, and the temperature measured by the upstream temperature measuring resistor 22 and the downstream temperature measuring resistor
- the flow rate of the intake air 1 is measured based on the information on the temperature difference from the temperature measured by the body 23.
- An organic protective film 30 typified by polyimide or the like is formed on the surface of the thermal air flow sensor.
- the organic protective film 30 is applied uniformly on the entire surface of the sensor once using a coating machine such as a spinner.
- a step is formed between the semiconductor substrate 20 and the organic protective film 30 by partially etching away by a patterning technique.
- the organic protective film 30 has a shape that surrounds the heating resistor 21 without a break.
- An Al wiring 40 is formed on the surface of the thermal air flow sensor, and is electrically connected to the lead frame 10 via a bonding wire 50 such as a gold wire.
- the semiconductor substrate 20 is fixed to the lead frame 10 with an adhesive or the like.
- the semiconductor substrate 20 and the lead frame 10 are sealed with a mold resin 60.
- the heating resistor 21, the upstream resistance temperature detector 22, and the downstream resistance temperature detector 23 need not be exposed to the medium to be measured in order to detect the flow rate, and thus are not covered with the mold resin 60.
- the region including the flow rate detection unit 7 is partially exposed from the mold resin 60.
- the outer peripheral end portion of the organic protective film 30 formed so as to surround the heating resistor 21 is provided to be located outside the thin portion 25, and the organic protective film 30 is disposed in a partially exposed region. Has been.
- the organic protective film 30 can be used to prevent the resin from reaching the thin portion 20. Can do.
- FIG. 3 is a schematic explanatory view of molding in the first embodiment
- FIG. 4 is a schematic explanatory view of flow of mold resin in the first embodiment.
- a partially exposed semiconductor package is created using a lower mold 80, an upper mold 81, and a slot 83 provided to be inserted into the upper mold 81.
- the semiconductor package having a partially exposed structure can be manufactured by pouring the resin through the insertion port 82.
- the insertion port 82 can be provided regardless of the lower mold 80 and the upper mold 81.
- the insert piece 83 is configured to have a concave portion on the pressing surface, the thin portion 25 is accommodated in the concave portion, and the substrate surface is pressed by the pressing portion provided on the outer peripheral edge of the concave portion, thereby sealing the resin.
- the insertion piece 83 is not directly applied to the thin portion 25.
- the organic protective film 30 surrounds the heating resistor 21, and the organic protective film 30 is provided in a region that is partially exposed from the mold resin 60. The resin 60 leaking from the resin can be blocked by the organic protective film 30, and the resin can be prevented from reaching the thin portion 25.
- the reliability of the thermal air flow sensor can be ensured even when the load of the insert piece 83 is small and resin leakage occurs.
- the insert piece 83 is pressed by movement amount control. Since the height of the surface of the semiconductor substrate 20 varies from product to product, when the surface height is high, a load larger than usual is applied to the semiconductor substrate 20, and if the load is too large, the sensor element will be deformed. It will occur. On the other hand, since the gap 61 is formed between the insert piece 83 and the surface of the thermal air flow sensor for the finished product having a low surface height, the resin may leak. According to the first embodiment of the present invention, the reliability of the thermal air flow sensor can be ensured even when the load of the insert piece 83 is small. Can be wide. Therefore, the product yield can be improved.
- the thin portion 25 is made of an inorganic material and is thin to improve thermal insulation, so it is fragile and needs to secure strength against dust collision.
- the peripheral portion of the thin portion 25 has a lower strength against dust collision than other portions. Therefore, as shown in FIG. 1, the organic protective film 30 is provided so that the inner peripheral end portion is positioned in the thin portion 25, so that the peripheral portion of the thin portion 25 is covered with the organic protective film 30, and the impact caused by the collision of dust is organic.
- the protective film 30 absorbs. According to the above configuration, since the strength of the thin portion 25 due to the collision of dust contained in the intake air can be increased, the fouling resistance of the thermal air flow sensor is improved, and a highly reliable thermal air flow sensor is provided. Realize.
- a second embodiment of the present invention will be described with reference to FIGS. The description of the same configuration as that of the first embodiment is omitted.
- FIG. 5 is a configuration diagram of the sensor element before molding according to the second embodiment
- FIG. 6 is a configuration diagram of the sensor element after molding according to the second embodiment.
- the heating resistor heating resistor 21, the upstream temperature measuring resistor 22, and the downstream temperature measuring resistor 23 are exposed to the measured medium on the organic protective film 30 provided on the semiconductor substrate 20.
- an exposed portion that exposes a part of the thin portion 25 and a slit 35 that is provided so as to surround the thin portion 25 are formed. Since the slit 35 surrounds the thin portion 25 seamlessly, even if a resin leak occurs during resin molding, the mold resin 60 is trapped in the slit 35 and prevents the mold resin 60 from flowing into the thin portion 25.
- the organic protective film 30 is provided so as to protect the periphery of the thin portion 25, the strength of the thin portion 25 against the collision of dust contained in the intake air can be increased.
- a part of the semiconductor substrate 20 is exposed from the organic protective film 30 by the slit 35, and a step is formed by the exposed surface of the semiconductor substrate 20 and the organic protective film 30. Furthermore, it is desirable to cover the Al wiring 40 with the organic protective film 30 to protect it from corrosive components such as water.
- the semiconductor substrate 20 and the lead frame 10 are molded resin 60 so that the entire inner peripheral end portion of the slit 35 and the outer peripheral end portion of the slit 35 are partially exposed from the mold resin 60. Seal with. Since the entire inner peripheral edge of the slit 35 is located in a region that is partially exposed from the mold resin 60, even if the mold resin 60 leaks from the gap 61 as shown in FIG. The resin can be prevented from reaching the thin portion 25.
- FIG. 7 is a schematic explanatory view of molding in the second embodiment
- FIG. 8 is a schematic explanatory view of flow of mold resin in the second embodiment.
- the pressing portion of the insert piece 83 is pressed against the organic protective film 30.
- the organic protective film 30 functions as a buffer material, and the stress transmitted to the thin portion 25 can be reduced. Therefore, deformation of the thin portion 25 when molding is performed can be suppressed. Therefore, according to the second embodiment of the present invention, the detection error due to the deformation of the thin portion 25 can be suppressed, so that the reliability of the thermal air flow sensor can be improved.
- the mold resin 60 and the thermal air flow sensor have a structure in which the organic protective film 30 is mediated, stress is applied to the organic protective film 30 due to resin shrinkage after molding.
- the shape of the organic protective film 30 is formed so as to communicate with the end of the thin portion, the stress due to the thermal contraction of the mold resin 60 works to the end of the thin portion 25 and may affect the flow rate characteristics. is there.
- the organic protective film 31 located at the contact portion of the mold resin 60 and the thermal air flow sensor is isolated from the organic protective film 32 formed at the end of the thin portion. Since the slit part 35 is formed, stress is not transmitted to the organic protective film 32 formed at the end of the thin part through the organic protective film 30. Therefore, there is an effect of reducing the influence of stress on the flow characteristics.
- a third embodiment of the present invention will be described with reference to FIGS. The description of the same configuration as that of the second embodiment is omitted.
- the slit inner peripheral side organic protective film 33 is located so as to be partially exposed from the mold resin 60, and the slit outer peripheral side organic protective film 34 is covered with the mold resin 60. Resin molding. Since the slit inner peripheral side organic protective film 33 is located in a region partially exposed from the mold resin 60, even if the mold resin 60 leaks from the gap 61 as shown in FIG. Since the mold resin 60 can be blocked by the film 33, it is possible to suppress the mold resin 60 from reaching the thin portion 25.
- the organic protective film 30 protects the Al wiring 40, but the organic protective film 30 itself absorbs moisture, and the Al wiring 40 receives moisture through the organic protective film 30.
- the protective film sandwiched between the mold resin and the semiconductor substrate and the protective film formed on the thin part are independent of each other, so that the influence of stress on the thin part is reduced. Yes.
- the slit shape of the first embodiment is a shape in which the entire circumference is isolated, but even if the slit is formed only on one side or one side as shown in FIG. 6, the effect of preventing the mold resin from flowing out Is obtained.
- the effect of stress is the same, and if it can be clarified by using actual machine evaluation and analysis that the stress of the resin is greatly applied from a certain direction, it is possible to effectively trust the thin wall portion by forming a slit in that direction. Can be improved.
- the slit shape of the second embodiment is a shape in which the entire circumference is separated by one step, but the effect of preventing the mold resin from flowing out is obtained even when the slit is formed in a multi-stage shape as shown in FIG. It is done.
- One of the purposes of multi-stage is to protect the resistor 37 formed on the semiconductor substrate from the collision of dust, or to reduce the temperature sensor 37 formed on the semiconductor substrate in order to improve the thermal response, the thin portion 25.
- the protective film 31 may be formed in the slit formed in the second embodiment.
- the slit for preventing the mold resin 60 from flowing in has a multi-stage shape. Even in such a case, the shape is effective for preventing the flow of the mold resin 60.
- the organic protective film 30 is formed of polyimide.
- the heating resistor 21 In order to measure the intake air flow rate, the heating resistor 21 generates heat and the thin portion 25 becomes high temperature.
- polyimide is excellent in heat resistance, deterioration of the material due to heat generation can be suppressed. Therefore, the strength of the measuring element 1 can be improved against the collision of the solid particles over a long period of time.
- the organic protective film 30 is formed of polyimide, the dust resistance of the thin insulating film can be improved and the cost can be reduced even in the case of resin sealing so that a part of the semiconductor element is partially exposed. It is possible to provide a thermal air flow sensor that suppresses a decrease in the product yield without increasing.
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Abstract
Description
2・・・・半導体パッケージ
3・・・・ハウジング
4・・・・フランジ
5・・・・吸気管路
6・・・・副通路
7・・・・流量検出部
8・・・・コネクタ端子
10・・・リードフレーム(基板支持部材)
20・・・半導体基板
21・・・発熱抵抗体
22・・・上流側温抵抗体
23・・・下流側温抵抗体
25・・・薄肉部
30・・・有機保護膜
31・・・有機保護膜
33・・・スリット内周側有機保護膜
34・・・スリット外周側有機保護膜
35・・・スリット
36・・・スリット
37・・・半導体基板上に形成される抵抗体
38・・・半導体基板上に形成される温度センサ
40・・・Al配線
50・・・ボンディングワイヤ
60・・・モールド樹脂
61・・・モールド樹脂と熱式流量センサの境界部
80・・・モールド下金型
81・・・モールド上金型
82・・・樹脂流し口
83・・・入れ駒
Claims (19)
- 薄肉部と、前記薄肉部に設けられる発熱抵抗体と、前記発熱抵抗体の上下流に設けられる測温抵抗体を有する半導体基板と、
前記半導体基板上に設けられた保護膜と、
前記半導体基板を封止する樹脂と、を備え、前記樹脂は前記薄肉部を含む領域を部分的に露出する露出部を有する熱式空気流量センサであって、
前記保護膜は、前記発熱抵抗体を切れ目なく囲うように設けられていて、前記保護膜の外周端部が前記薄肉部より外側で、かつ前記露出部にあることを特徴とする熱式空気流量センサ。 - 請求項1に記載の熱式空気流量センサにおいて、
前記保護膜は有機材料からなり、前記保護膜の内周端部は薄肉部上にあることを特徴とする熱式空気流量センサ。 - 請求項2に記載の熱式空気流量センサにおいて、
前記半導体基板上であって、前記保護膜よりも外側に第2の保護膜を設けることを特徴とする熱式空気流量センサ。 - 請求項3に記載の熱式空気流量センサにおいて、
前記第2の保護膜は、前記保護膜を囲うように設けられていることを特徴とする熱式空気流量センサ。 - 請求項4に記載の熱式空気流量センサにおいて、
前記第2の保護膜のすべてが、前記樹脂に覆われている領域に設けられていることを特徴とする熱式空気流量センサ。 - 請求項4に記載の熱式空気流量センサにおいて、
前記第2の保護膜の内周端部が前記露出部に設けられていて、前記第2の保護膜の外周端部が前記樹脂に覆われている領域に設けられていることを特徴とする熱式空気流量センサ。 - 請求項4に記載の熱式流量センサにおいて、
前記第2の保護膜は前記保護膜と同一の材料からなることを特徴とする熱式空気流量センサ。 - 請求項7に記載の熱式流量センサにおいて、
前記有機材料は、ポリイミドであることを特徴とする熱式空気流量センサ。 - 請求項4に記載の熱式空気流量センサにおいて、
前記保護膜を囲うように設けられた第3の保護膜を備え、前記第2の保護膜は前記第3の保護膜を囲うように設けられていることを特徴とする熱式空気流量センサ。 - 請求項9に記載の熱式空気流量センサにおいて、
前記第3の保護膜は、前記露出部に設けられていることを特徴とする熱式空気流量センサ。 - 請求項9に記載の熱式空気流量センサにおいて、
前記第3の保護膜の内周端部が前記露出部に設けられていて、前記第3の保護膜の外周端部が前記樹脂に覆われている領域に設けられていることを特徴とする熱式空気流量センサ。 - 請求項9に記載の熱式流量センサにおいて、
前記保護膜と前記第2の保護膜と前記第3の保護膜とは同一の材料からなることを特徴とする熱式空気流量センサ。 - 薄肉部と、前記薄肉部に設けられる発熱抵抗体と、前記発熱抵抗体の上下流に設けられる測温抵抗体を有する半導体基板と、
前記薄肉部の一部を露出するよう前記半導体基板上に設けられた保護膜と、
前記半導体基板を封止する樹脂と、を備え、前記樹脂は前記薄肉部を含む領域を部分的に露出する露出部を有する熱式空気流量センサであって、
前記保護膜は、スリットを有していて、前記スリットが前記露出部に配置されていることを特徴とする熱式空気流量センサ。 - 請求項13に記載の熱式空気流量センサにおいて、
前記保護膜は有機材料からなることを特徴とする熱式空気流量センサ。 - 請求項14に記載の熱式空気流量センサにおいて、
前記スリットは、前記薄肉部を切れ目なく囲うように設けられていることを特徴とする熱式空気流量センサ。 - 請求項15に記載の熱式空気流量センサにおいて、
前記スリットの外周端部は樹脂に覆われている領域にあり、前記スリットの内周端部は前記露出部にあることを特徴とする熱式空気流量センサ。 - 請求項15に記載の熱式空気流量センサにおいて、
前記スリットはすべて前記露出部に配置されていることを特徴とする熱式空気流量センサ。 - 金型と、押し当て面に押し当て部と凹部を有する入れ駒とを用いるチップパッケージの製造方法であって、
発熱抵抗体が形成される薄肉部と前記発熱抵抗体を囲うように設けられた保護膜とを有する半導体基板と、駆動回路と、前記半導体基板と駆動回路とを支持する支持体と、を前記金型に入れる第1ステップと、
前記保護膜の外側を、前記入れ駒の押し当て部で押し当てる第2ステップと、
前記金型に樹脂を注入する第3ステップと、
を備えることを特徴とするチップパッケージの製造方法。 - 金型と、押し当て面に押し当て部と凹部を有する入れ駒とを用いるチップパッケージの製造方法であって、
薄肉部と前記薄肉部を囲うようにスリットを設けた保護膜とを有する半導体基板と、駆動回路と、前記半導体基板と駆動回路とを支持する支持体と、を前記金型に入れる第1ステップと、
前記スリット領域に、前記入れ駒の押し当て部で押し当てる第2ステップと、
前記金型に樹脂を注入する第3ステップと、
を備えることを特徴とするチップパッケージの製造方法。
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