Classifications

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  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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  • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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  • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
  • H01L24/92—Specific sequence of method steps
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  • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
  • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
  • H01L2224/13144—Gold [Au] as principal constituent
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  • H01L2224/161—Disposition
  • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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  • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
  • H01L2224/838—Bonding techniques
  • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
  • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
  • H01L2224/83862—Heat curing
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
  • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
  • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
  • H01L2224/92—Specific sequence of method steps
  • H01L2224/921—Connecting a surface with connectors of different types
  • H01L2224/9211—Parallel connecting processes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/10—Bump connectors ; Manufacturing methods related thereto
  • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
  • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/10—Bump connectors ; Manufacturing methods related thereto
  • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
  • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
  • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
  • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/156—Material
  • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
  • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
  • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
  • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
  • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
  • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
  • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads

Definitions

• the present invention relates to a circuit connection material in which conductive particles are dispersed, and a method of manufacturing a mounting body using the circuit connection material.
• Circuit connection materials such as anisotropic conductive film (ACF) in which conductive particles are dispersed are mainly classified into cation curable type, anion curable type for epoxy resin, and radical curable type for acrylic resin.
• ACF anisotropic conductive film
• anion curable type for epoxy resin anion curable type for epoxy resin
• radical curable type for acrylic resin a cationic curing type circuit connecting material is used from the viewpoint of low-temperature curability and adhesive strength (for example, see Patent Document 1).
• the present invention has been proposed in view of such conventional circumstances, and provides a circuit connection material having excellent low-temperature curability and a method of manufacturing a mounting body using the circuit connection material.
• the present inventors have made a two-layer structure in which an ACF layer having conductive particles and an NCF (Non-Conductive Film) layer made of an insulating resin are laminated, and at least a polyvinyl acetal resin is formed on the ACF layer. It has been found that the low temperature curability is improved by blending.
• NCF Non-Conductive Film
• the circuit connecting material according to the present invention includes a first adhesive layer containing a polyvinyl acetal resin, a cationic polymerizable resin, a cationic polymerization initiator, and conductive particles, a cationic polymerizable resin, and a cationic And a second adhesive layer containing a polymerization initiator.
• the manufacturing method of the mounting body according to the present invention includes a first adhesive layer containing a polyvinyl acetal resin, a cationic polymerizable resin, a cationic polymerization initiator, and conductive particles, and a cationic polymerizable resin.
• a pressing step of placing a second electronic component on the material and pressing the second electronic component from the upper surface of the second electronic component with a crimping head.
• the mounting body according to the present invention includes a first adhesive layer containing a polyvinyl acetal resin, a cationic polymerizable resin, a cationic polymerization initiator, and conductive particles, a cationic polymerizable resin, and a cationic polymerization.
• the electrode of the first electronic component and the electrode of the second electronic component are electrically connected by a circuit connecting material having a second adhesive layer containing an initiator. .
• high capture efficiency of conductive particles can be obtained even when pressure bonding is performed at a low temperature, and low-temperature curability can be improved.
• the circuit connection material in the present embodiment has excellent particle trapping properties due to a two-layer structure in which a first adhesive layer containing conductive particles and a second adhesive layer are laminated. .
• the first adhesive layer contains a polyvinyl acetal resin, a cationic polymerizable resin, a cationic polymerization initiator, and conductive particles.
• the polyvinyl acetal resin is synthesized by an acetalization reaction between polyvinyl alcohol (PVA: polyvinyl alcohol) and an aldehyde as shown in the following chemical formula (1).
• PVA polyvinyl alcohol
• Polyvinyl butyral resin which is one of polyvinyl acetal resins, is synthesized by a butyralization reaction between polyvinyl alcohol and butyraldehyde. However, since it is not completely butyralized, as shown in the following chemical formula (2), an acetyl group and A hydroxyl group remains.
• the polyvinyl acetal resin represented by the polyvinyl butyral resin is affected by thermal and mechanical properties and melt viscosity depending on the degree of polymerization and the ratio of the structure such as acetal group (butyral group), acetyl group, and hydroxyl group. .
• the polyvinyl acetal resin in the present embodiment has a hydroxyl group, it can activate cationic polymerization and improve low temperature curability.
• the hydroxyl group ratio of the polyvinyl acetal resin is preferably 20 mol% or more and 40 mol% or less, and more preferably 30 mol% or more and 40 mol% or less.
• the hydroxyl group ratio of the polyvinyl acetal resin is within the above range, the low temperature curability can be improved.
• the viscosity of the polyvinyl acetal resin at normal temperature is preferably 50 mPa ⁇ s or more and 200 mPa ⁇ s or less.
• the viscosity of the polyvinyl acetal resin at room temperature is within the above range, it prevents adhesion to SUS at room temperature, improves film properties, suppresses the increase in temporary bonding temperature, and improves temporary bonding properties. Can do.
• the glass transition temperature (Tg) of the polyvinyl acetal resin is preferably 50 ° C. or higher and 100 ° C. or lower, and more preferably 80 ° C. or higher and 100 ° C. or lower.
• Tg glass transition temperature
• the content of the polyvinyl acetal resin is preferably 5 to 30 parts by mass with respect to 100 parts by mass in total of the resin components of the first adhesive layer.
• the content of the polyvinyl acetal resin is within the above range, excellent low-temperature curability, temporary stickability, and film properties can be obtained.
• cationic polymerizable resins examples include monofunctional epoxy compounds such as ethylene oxide, propylene oxide, butylene oxide, styrene oxide, phenyl glycidyl ether, and butyl glycidyl ether; bisphenol A type epoxy resins, bisphenol F type epoxy resins, and phenol novolac type epoxy resins.
• Heterocyclic epoxy resins such as alicyclic epoxy resins, triglycidyl isocyanate, and hydantoin epoxy; Aliphatic epoxy resins such as hydrogenated bisphenol A type epoxy resin, propylene glycol diglycidyl ether, pentaerythritol-polyglycidyl ether; Epoxy resin obtained by reaction of an aliphatic, aliphatic or cycloaliphatic carboxylic acid with epichlorohydrin; spiro ring-containing epoxy resin; o-allyl-sulfur A glycidyl ether type epoxy resin which is a reaction product of a novolac compound and epichlorohydrin; a glycidyl ether type epoxy resin which is a reaction product of a diallyl bisphenol compound having an allyl group at the ortho position of each hydroxyl group of bisphenol A and epichlorohydrin; Diglycidyl ether type epoxy resins of Schiff compounds, stilbene compounds and
• the cationic polymerization initiator is one in which a cationic species causes the epoxy group at the end of the epoxy resin to open and self-crosslinks the epoxy resins.
• cationic polymerization initiators include onium salts such as aromatic sulfonium salts, aromatic diazonium salts, iodonium salts, phosphonium salts, and selenonium salts.
• an aromatic sulfonium salt is suitable as a cationic polymerization initiator because of its excellent reactivity at low temperatures and a long pot life.
• the conductive particles for example, metal particles such as nickel, gold, and copper, those obtained by applying gold plating to resin particles, and those obtained by applying an insulating coating to the outermost layer of particles obtained by applying gold plating to resin particles are used. be able to.
• the average particle diameter of the conductive particles is preferably 1 to 20 ⁇ m from the viewpoint of conduction reliability.
• silane coupling agent epoxy, amino, mercapto sulfide, ureido, and the like can be used. Thereby, the adhesiveness in the interface of an organic material and an inorganic material can be improved.
• an inorganic filler silica, talc, titanium oxide, calcium carbonate, magnesium oxide and the like can be used, and the kind of the inorganic filler is not particularly limited. Depending on the content of the inorganic filler, the fluidity can be controlled and the particle capture rate can be improved. Further, a rubber component or the like may be appropriately used for the purpose of relaxing the stress of the joined body.
• the second adhesive layer contains a cationic polymerizable resin and a cationic polymerization initiator. Since the cationic polymerizable resin and the cationic polymerization initiator are the same as those of the first epoxy resin, description thereof is omitted. Moreover, it is preferable to add a silane coupling agent as another additive composition similarly to the 1st epoxy resin. Moreover, you may add an inorganic filler, a rubber component, etc.
• the second adhesive layer may contain a polyvinyl acetal resin.
• the content of the polyvinyl acetal resin may be less than the content of the polyvinyl acetal resin in the first adhesive layer.
• the circuit connecting material having such a configuration has a two-layer structure of a first adhesive layer and a second adhesive layer, and the polyvinyl acetal resin is contained in the first adhesive layer. Even when pressure bonding is performed at a low temperature, high capture efficiency of the conductive particles can be obtained, and excellent low-temperature curability can be obtained.
• the method for manufacturing a circuit connecting material in the present embodiment is a method in which the first adhesive layer and the second adhesive layer are bonded together, a step of creating the first adhesive layer, It has the process of creating an adhesive bond layer, and the process of affixing a 1st adhesive bond layer and a 2nd adhesive bond layer.
• an adhesive composition containing a cationic polymerizable resin and a cationic polymerization initiator is dissolved in a solvent, and conductive particles are added.
• a solvent toluene, ethyl acetate or the like, or a mixed solvent thereof can be used.
• the release substrate is, for example, a laminate in which a release agent such as silicone is applied on a substrate such as PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), etc. Consists of structure.
• the resin composition applied on the release substrate is dried by a heat oven, a heat drying apparatus or the like.
• a first adhesive layer having a thickness of about 5 to 50 ⁇ m can be obtained.
• an adhesive composition containing a cationic polymerizable resin and a cationic polymerization initiator is dissolved in a solvent as in the case of the first adhesive layer. And after adjusting the resin composition of a 2nd adhesive bond layer, this can be apply
• the first adhesive layer and the second adhesive layer are attached and laminated to form an anisotropy having a two-layer structure.
• a conductive film is produced.
• the first adhesive layer and the second adhesive layer are attached and manufactured.
• the present invention is not limited to this, and one adhesive layer is formed. Then, the resin composition of the other adhesive layer may be applied and dried.
• the manufacturing method of the mounting body in the present embodiment includes a temporary pasting step in which the first adhesive layer side of the circuit connection material described above is temporarily pasted on the electrode of the first electronic component, and a second on the circuit connection material. And a pressing step of pressing the electronic component from the upper surface of the second electronic component with a crimping head. Thereby, it is possible to obtain a mounting body in which the electrode of the first electronic component and the electrode of the second electronic component are electrically connected.
• Examples of the first electronic component include IZO coated glass in which a glass substrate is coated with an IZO (Indium / Zinc / Oxide) film, and SiNx coated glass in which a glass substrate is coated with a SiNx (silicon nitride) film.
• Examples of the second electronic component include a COF (Chip On Film) and an IC (Integrated Circuit).
• a polyvinyl acetal resin, a cationic polymerizable resin, a cationic polymerization initiator, a first adhesive layer containing conductive particles, a cationic polymerizable resin, and a cationic polymerization initiator By using a circuit connection material having a two-layer structure in which a second adhesive layer contained is laminated, high capture efficiency of conductive particles can be obtained even when cured at a low temperature, and excellent connection reliability is obtained. be able to.
• Example> Examples of the present invention will be described below.
• an anisotropic conductive film having a two-layer structure in which an ACF layer containing a polyvinyl acetal resin and an NCF layer are laminated is produced, and a mounted body is produced using the anisotropic conductive film.
• Property, low-temperature curability, temporary sticking property, and film property were evaluated.
• the present invention is not limited to these examples.
• Example 1 (Preparation of anisotropic conductive film) 15 parts by mass of phenoxy resin (product name: YP-70, manufactured by Tohto Kasei Co., Ltd.), 15 parts by mass of epoxy resin (product name: YD-019, manufactured by Tohto Kasei Co., Ltd.), and epoxy resin (product name: EP828, manufactured by JER) ) 35 parts by weight, special polyvinyl acetal resin (product name: BX-1, manufactured by Sekisui Chemical Co., Ltd., hydroxyl group: 33 ⁇ 3 mol%, viscosity: 80 to 130 mPa ⁇ s (20 ° C.), glass transition temperature (Tg): 90 parts) and 2 parts by weight of a silane coupling agent (product name: A187, manufactured by Momentive Performance Materials Japan GK) and a cationic polymerization initiator (product name: SI-60L, Sanshin Chemical) 30 parts by weight of conductive particles (product name: AUL704, manufactured by Se
• phenoxy resin product name: YP-70, manufactured by Tohto Kasei Co., Ltd.
• 20 parts by mass of epoxy resin product name: YD-019, manufactured by Tohto Kasei Co., Ltd.
• epoxy resin product name: EP828, manufactured by JER
• 35 parts by mass, 2 parts by mass of a silane coupling agent product name: A187, manufactured by Momentive Performance Materials Japan GK
• a cationic polymerization initiator product name: SI-60L, manufactured by Sanshin Chemical Co., Ltd.
• the aforementioned ACF layer and NCF layer were laminated at a roll temperature of 45 ° C. using a roll laminator to produce an anisotropic conductive film having a two-layer structure with an ACF layer and an NCF layer.
• the ACF layer side of the anisotropic conductive film slit to a width of 1.5 mm was temporarily attached to a glass substrate for evaluation.
• an evaluation IC chip was mounted from the NCF layer side of the anisotropic conductive film and temporarily fixed.
• a sheet made of polytetrafluoroethylene with a heat tool of 1.5 mm width and a thickness of 100 ⁇ m as a buffer material conditions of 150 ° C. or 160 ° C., 3 MPa, 5 seconds (tool speed 10 mm / sec, stage temperature 40 ° C.)
• the mounting body was manufactured by pressure bonding.
• Table 1 shows the evaluation results of Example 1.
• the DSC peak temperature of the anisotropic conductive film was 102 ° C., and was found to have excellent reactivity.
• the maximum value of the conduction resistance value of the mounted body crimped at 160 ° C. was 1.2 ⁇ , and the minimum value was 0.3 ⁇ .
• bonded on 150 degreeC conditions was 1.1 ohm, and the minimum value was 0.2 ohm, and it turned out that low-temperature curability improved.
• the lower limit of the temperature which can be transferred at the time of temporary pressure bonding is 50 ° C., and it was found that the film has excellent temporary stickability. It was also found that the anisotropic conductive film did not adhere to the stainless steel at room temperature and had excellent film properties.
• Example 2 instead of the special polyvinyl acetal resin, polyvinyl butyral resin (product name: BM-1, manufactured by Sekisui Chemical Co., Ltd., hydroxyl group: about 34 mol%, viscosity: 60 to 100 mPa ⁇ s (20 ° C.), glass transition temperature (Tg): 67
• the anisotropic conductive film was produced in the same manner as in Example 1 except that the ACF layer was produced using (° C.), and a mounted body was produced.
• Table 1 shows the evaluation results of Example 2.
• the DSC peak temperature of the anisotropic conductive film was 102 ° C., and was found to have excellent reactivity.
• the maximum value of the conduction resistance value of the mounted body crimped at 160 ° C. was 1.3 ⁇ , and the minimum value was 0.3 ⁇ .
• bonded on 150 degreeC conditions was 1.2 ohms, and the minimum value was 0.2 ohms, and it turned out that low-temperature curability improved.
• the lower limit of the temperature which can be transferred at the time of temporary pressure bonding is 50 ° C., and it was found that the film has excellent temporary stickability. It was also found that the anisotropic conductive film did not adhere to the stainless steel at room temperature and had excellent film properties.
• Example 3 7.5 parts by weight of a special polyvinyl acetal resin, polyvinyl butyral resin (product name: BM-1, manufactured by Sekisui Chemical Co., Ltd., hydroxyl group: about 34 mol%, viscosity: 60 to 100 mPa ⁇ s (20 ° C.), glass transition temperature ( An anisotropic conductive film was produced in the same manner as in Example 1 except that the ACF layer was produced with Tg): 67 ° C. being 7.5 parts by mass, and a mounting body was produced.
• BM-1 polyvinyl butyral resin
• Tg glass transition temperature
• Table 1 shows the evaluation results of Example 3.
• the DSC peak temperature of the anisotropic conductive film was 102 ° C., and it was found that the anisotropic conductive film had excellent reactivity.
• the maximum value of the conduction resistance value of the mounted body crimped at 160 ° C. was 1.2 ⁇ , and the minimum value was 0.3 ⁇ .
• bonded on 150 degreeC conditions was 1.1 ohms, and the minimum value was 0.2 ohms, and it turned out that low-temperature curability improved.
• the lower limit of the temperature which can be transferred at the time of temporary pressure bonding is 50 ° C., and it was found that the film has excellent temporary stickability. It was also found that the anisotropic conductive film did not adhere to the stainless steel at room temperature and had excellent film properties.
• Table 1 shows the evaluation results of Comparative Example 2.
• the DSC peak temperature of the anisotropic conductive film was 102 ° C., and it was found that the anisotropic conductive film had excellent reactivity.
• the maximum value of the conduction resistance value of the mounted body crimped at 160 ° C. was 1.2 ⁇ , and the minimum value was 0.3 ⁇ .
• the maximum value of the conduction resistance value of the mounted body crimped at 150 ° C. was 1.3 ⁇ , and the minimum value was 0.3 ⁇ .
• the lower limit of the temperature which can be transferred at the time of temporary pressure bonding is 50 ° C., and it was found that the film has excellent temporary stickability.
• since there was adhesion of the anisotropic conductive film to stainless steel at normal temperature it turned out that film property is inferior to an Example.
• Table 1 shows the evaluation results of Comparative Example 3.
• the DSC peak temperature of the anisotropic conductive film was 102 ° C., and was found to have excellent reactivity.
• the maximum value of the conduction resistance value of the mounted body crimped at 160 ° C. was 1.2 ⁇ , and the minimum value was 0.3 ⁇ .
• the maximum value of the conduction resistance value of the mounted body crimped at 150 ° C. was 1.3 ⁇ , and the minimum value was 0.3 ⁇ .
• the lower limit of the temperature which can be transferred at the time of temporary pressure bonding was 60 ° C., and it was found that the temporary sticking property was inferior to that of the example. It was also found that the anisotropic conductive film did not adhere to the stainless steel at room temperature and had excellent film properties.
• low-temperature curability is improved by blending a special polyvinyl acetal resin or polyvinyl butyral resin in the ACF layer in an anisotropic conductive film having a two-layer structure in which an ACF layer and an NCF layer are laminated.
• a special polyvinyl acetal resin or polyvinyl butyral resin in the ACF layer in an anisotropic conductive film having a two-layer structure in which an ACF layer and an NCF layer are laminated.

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• Power Engineering (AREA)
• Adhesives Or Adhesive Processes (AREA)
• Electric Connection Of Electric Components To Printed Circuits (AREA)
• Wire Bonding (AREA)
• Adhesive Tapes (AREA)

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