WO2013153937A1 - Dispositif à diodes semi-conductrices - Google Patents

Dispositif à diodes semi-conductrices Download PDF

Info

Publication number
WO2013153937A1
WO2013153937A1 PCT/JP2013/058354 JP2013058354W WO2013153937A1 WO 2013153937 A1 WO2013153937 A1 WO 2013153937A1 JP 2013058354 W JP2013058354 W JP 2013058354W WO 2013153937 A1 WO2013153937 A1 WO 2013153937A1
Authority
WO
WIPO (PCT)
Prior art keywords
mosfet
diode device
semiconductor diode
breakdown voltage
semiconductor
Prior art date
Application number
PCT/JP2013/058354
Other languages
English (en)
Japanese (ja)
Inventor
上野　勝典
Original Assignee
次世代パワーデバイス技術研究組合
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 次世代パワーデバイス技術研究組合 filed Critical 次世代パワーデバイス技術研究組合
Publication of WO2013153937A1 publication Critical patent/WO2013153937A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H01L2224/49173—Radial fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49177—Combinations of different arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Definitions

  • the present invention relates to a semiconductor diode device.
  • GaN semiconductor elements wide band gap gallium nitride (GaN) compound semiconductors have been used as semiconductor materials for semiconductor elements for high frequency devices (hereinafter referred to as GaN semiconductor elements).
  • GaN-based semiconductor element a buffer layer or a GaN doped layer formed by using, for example, a metal-organic chemical vapor deposition (MOCVD) method is provided on the surface of a semiconductor substrate.
  • MOCVD metal-organic chemical vapor deposition
  • wide band gap semiconductor elements have been studied as devices that handle high withstand voltages and large currents in recognition that they can be applied to power devices for power devices in addition to high frequency applications. Power devices are roughly divided into transistors and diodes.
  • silicon has been mainly used as a semiconductor material for power devices, but silicon carbide (SiC) has been used because of its low resistance, and devices using GaN are also being studied.
  • FIG. 9 is a schematic cross-sectional view of a Schottky barrier diode using a known GaN-based semiconductor.
  • a buffer layer 102 for laminating a GaN layer, a GaN layer 103 and an aluminum gallium nitride (AlGaN) layer 104 are sequentially laminated on a substrate 101.
  • the AlGaN layer 104 is a mixed crystal of AlN and GaN, and the characteristics of the band gap, spontaneous polarization, and piezoelectric polarization change depending on the composition ratio.
  • a two-dimensional electron gas (2DEG) layer 103a whose concentration is controlled by controlling the Al composition ratio and thickness of the AlGaN layer 104 is formed. ing.
  • the 2DEG layer 103a serves as a passage through which electrons flow.
  • the Schottky barrier diode 100 has two main electrodes.
  • the anode electrode 105 is in Schottky contact with the AlGaN layer 104 and is electrically connected to the 2DEG layer 103a by electron tunneling current.
  • the cathode electrode 106 is in ohmic contact with the AlGaN layer 104.
  • the anode electrode 105 side when a positive bias voltage is applied to the cathode electrode 106 side, the anode electrode 105 side is in a reverse bias state, and the 2DEG layer 103a under the anode electrode is depleted and maintains a high breakdown voltage.
  • a positive bias voltage when a positive bias voltage is applied to the anode electrode 105 side, electrons are tunneled from the anode electrode 105 side to the 2DEG layer 103a, and a large current flows, thereby functioning as a diode having so-called rectification characteristics.
  • the Schottky barrier diode 100 can be used for a power device.
  • the Schottky barrier diode 100 has a low band resistance of the 2DEG layer 103a and a wide band gap of the GaN material, the insulating electric field strength is more than an order of magnitude larger than that of silicon, and a high breakdown voltage can be realized. Application to is expected.
  • the Schottky barrier diode 100 has a feature that it can be switched at high speed because there is no accumulation of minority carriers.
  • the buffer layer 102 formed on the substrate 101 is inserted in order to form the GaN layer 103 and the AlGaN layer 104 thereon, and is formed of a different substrate made of a material different from GaN, for example, silicon or sapphire, This is for absorbing a difference in thermal expansion coefficient and lattice constant from SiC or the like and stacking the GaN layer 103 and the AlGaN layer 104 with good crystallinity.
  • the buffer layer 102 has a high resistance or insulating characteristic and is used to maintain a breakdown voltage in a high breakdown voltage element.
  • a silicon substrate that is high quality, inexpensive, and capable of using a large diameter is often used.
  • a vertical Schottky barrier diode formed on a single crystal of SiC is also frequently used recently.
  • the Schottky barrier diode using SiC also has a characteristic that high-speed switching can be performed at a high breakdown voltage as in the case of using a GaN material.
  • a high withstand voltage and a low conduction resistance (on-resistance) as described above are great merits, but when maintaining a high withstand voltage in an off state, there is a large gap between the electrodes.
  • a leakage current may flow. Since this leak current is generated when a high voltage is applied, it causes power loss. This lost power is converted into heat in the device, increasing the temperature of the device, and electrons accelerated by a large internal electric field become hot electrons that are injected and accumulated in unnecessary locations, causing deterioration of reliability. There is a problem of inviting.
  • the leakage current must be suppressed to 1 mA / cm 2 or less at room temperature at the minimum.
  • the forward voltage drop (Vf) is determined by the work function difference between the metal (Schottky metal) constituting the Schottky electrode and the semiconductor in contact therewith.
  • the leakage current (Ileak) in the reverse direction is also determined by the work function difference. At this time, if the work function difference is large, there is a trade-off relationship that Vf increases but Ileak decreases. For this reason, it is common to select a Schottky metal having a small work function in order to lower Vf as much as possible within the allowable range of Ileak.
  • GaN has a characteristic that Vf of a Schottky junction with a metal hardly changes corresponding to the work function of the metal. This factor is understood to be due to the fact that there are many interface states on the GaN surface, so the position of the Fermi level is always kept constant near the surface regardless of the work function of the metal (Fermi level). Called pinning).
  • a semiconductor diode device 200 is formed by cascode-connecting a low breakdown voltage Schottky barrier diode 203 made of a silicon material and a normally-on transistor 204 between an anode electrode 201 and a cathode electrode 202.
  • a method of realizing low Vf and low Ileak by configuring has been proposed (see Non-Patent Document 1). According to this method, Vf and Ileak are determined by the Schottky barrier diode 203 having a low breakdown voltage, and it is therefore possible to control their values relatively freely.
  • Schottky metal may be selected in the same manner as described above.
  • Ileak is determined by the low breakdown voltage Schottky barrier diode 203.
  • the low withstand voltage Schottky barrier diode 203 made of silicon material has a very large leakage current of about several mA or more. This is because the design emphasizes lowering Vf than lowering leakage current.
  • the leakage current of the Schottky barrier diode 203 also flows through the normally-on transistor 204 having a high breakdown voltage. Therefore, it is considered that there is a problem that heat is generated on the high withstand voltage device side maintaining a large voltage.
  • the present invention has been made in view of the above, and an object thereof is to provide a semiconductor diode device that can simultaneously realize a low forward voltage drop and a low leakage current.
  • a semiconductor diode device includes a normally-on high voltage transistor made of a wide bandgap semiconductor material and a series connection to the high voltage transistor. And a MOSFET having a breakdown voltage lower than that of the high breakdown voltage transistor and a threshold voltage of 0.3 V or more and 1 V or less, and a gate and a source of the MOSFET are connected to each other. .
  • the semiconductor diode device according to the present invention is characterized in that the withstand voltage of the MOSFET is higher than the threshold voltage of the high withstand voltage transistor.
  • the semiconductor diode device according to the present invention is characterized in that the wide band gap semiconductor material is a gallium nitride compound semiconductor or silicon carbide.
  • the semiconductor diode device according to the present invention is characterized in that the MOSFET is made of a silicon material.
  • the semiconductor diode device according to the present invention is characterized in that the high breakdown voltage transistor is a HEMT.
  • the semiconductor diode device according to the present invention is characterized in that the high breakdown voltage transistor is a JFET.
  • the semiconductor diode device according to the present invention is characterized in that the MOSFET is an up drain type.
  • the semiconductor diode device according to the present invention is characterized in that the high-breakdown-voltage transistor and the MOSFET are incorporated in one package.
  • FIG. 1 is a schematic diagram of a semiconductor diode device according to the first embodiment.
  • FIG. 2 is a diagram showing IV characteristics of the semiconductor diode device shown in FIG.
  • FIG. 3 is a schematic cross-sectional view of a HEMT that is an example of a high voltage transistor.
  • FIG. 4 is a schematic cross-sectional view of a JFET which is an example of a high voltage transistor.
  • FIG. 5 is a schematic diagram of a semiconductor diode device according to the second embodiment.
  • FIG. 6 is a schematic diagram of a semiconductor diode device according to the third embodiment.
  • FIG. 7 is a schematic diagram of a semiconductor diode device according to the fourth embodiment.
  • FIG. 8 is a schematic diagram of a semiconductor diode device according to the fifth embodiment.
  • FIG. 9 is a schematic cross-sectional view of a Schottky barrier diode using a known GaN-based semiconductor.
  • FIG. 10 is a schematic diagram of a conventional semiconductor di
  • FIG. 1 is a schematic diagram of a semiconductor diode device according to Embodiment 1 of the present invention.
  • the semiconductor diode device 10 includes an anode electrode 11, a cathode electrode 12, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) 13, and a high breakdown voltage transistor 14.
  • MOSFET Metal-Oxide-Semiconductor Field Effect Transistor
  • the MOSFET 13 includes a source electrode 13a, a gate electrode 13b, and a drain electrode 13c.
  • Reference numeral 13d denotes a built-in diode.
  • MOSFET 13 has a lower breakdown voltage than a high breakdown voltage transistor and a threshold voltage of 1 V or less.
  • MOSFET 13 is made of, for example, a silicon material.
  • the high breakdown voltage transistor 14 includes a source electrode 14a, a gate electrode 14b, and a drain electrode 14c.
  • the high breakdown voltage transistor 14 is a normally-on transistor having a high breakdown voltage of about 200 V to 2 kV and made of a wide band gap semiconductor material such as a GaN-based semiconductor material or SiC material.
  • the high voltage transistor 14 and the MOSFET 13 are cascode-connected in series.
  • the gate electrode 14 b of the high breakdown voltage transistor 14 and the gate electrode 13 b of the MOSFET 13 are connected to the anode electrode 11.
  • the gate electrode 13b and the source electrode 13a of the MOSFET 13 are connected.
  • the breakdown voltage of MOSFET 13 is preferably higher than the threshold voltage of high breakdown voltage transistor 14.
  • this semiconductor diode device 10 will be described. First, when a positive bias voltage is applied to the cathode electrode 12 side, the MOSFET 13 is in an off state, so that the anode-cathode of the semiconductor diode device 10 is in an off state.
  • the breakdown voltage of the semiconductor diode device 10 is determined by the breakdown voltage of the high breakdown voltage transistor 14.
  • the overall leakage current of the semiconductor diode device 10 is determined by the leakage current of the MOSFET 13.
  • a positive bias voltage is applied to the anode electrode 11 and a voltage exceeding the threshold value of the MOSFET 13 is applied to the gate electrode 13b, the channel of the MOSFET 13 is opened and a conduction current flows.
  • FIG. 2 is a diagram showing IV characteristics between the anode and the cathode of the semiconductor diode device 10.
  • Vbr is a withstand voltage.
  • the internal diode 13d associated with the PN junction is connected to the MOSFET 13 in parallel, if a positive bias voltage is applied to the anode electrode 11, a forward current may flow through the internal diode 13d.
  • a broken line L1 indicates the IV characteristic of the built-in diode 13d.
  • Vf can be controlled by setting the threshold voltage of the MOSFET 13. Therefore, Vf can be controlled by a principle different from that in the conventional Schottky barrier diode in which Vf is determined by the work function difference between the metal and the semiconductor. Since the threshold voltage of the MOSFET 13 can be freely designed by ion implantation such as channel doping or heat treatment, it is easy to realize low Vf.
  • the leakage current there is a trade-off relationship between the leakage current and Vf. That is, as Vf is decreased, the leakage current increases.
  • the bias voltage dependence of the leakage current is 60 mV / dec in the most ideal case, and is practically about 100 mV / dec. This value is referred to as an S value (subthreshold swing value), and is a parameter indicating the voltage change of the gate voltage when the leakage current increases by an order of magnitude in the gate voltage dependency of the drain current below the threshold value.
  • the ratio of the current at the threshold voltage to the leakage current is a five-digit difference. Become. Therefore, for example, if the current at the threshold voltage is 1 A, the leakage current is a sufficiently small value of 10 ⁇ A.
  • a typical Schottky barrier diode made of a conventional GaN-based semiconductor material or SiC material has a Vf of about 1 to 1.2V. Therefore, by setting the threshold voltage of the MOSFET 13 to 1 V or less, the semiconductor diode device 10 has a sufficiently lower Vf and a lower leakage current (Ileak) than the conventional one. Further, when the allowable value of the leakage current is 1 mA / cm 2 , the threshold voltage may be 0.3 V or more when the S value of the MOSFET 13 is 100 mV / dec.
  • FIG. 3 is a schematic cross-sectional view of a HEMT (High Electron Mobility Transistor) which is an example of a high voltage transistor.
  • a buffer layer 14A2, a GaN layer 14A3, and an AlGaN layer 14A4 are sequentially stacked on a substrate 14A1, and a source electrode 14A5, a gate electrode 14A6, and a drain electrode 14A7 are formed on the AlGaN layer 14A4.
  • a 2DEG layer 14A3a is formed at the interface between the GaN layer 14A3 and the AlGaN layer 14A4.
  • Such a GaN-based HEMT 14A has high breakdown voltage characteristics and low on-resistance characteristics, and is therefore suitable as the high breakdown voltage transistor 14.
  • the capacitance component is small, high-speed switching is realized and the HEMT can be prepared at a lower cost.
  • the threshold is about -3 to -10V. It is usually a normally-on device.
  • FIG. 4 is a schematic cross-sectional view of a JFET (Junction FET) which is an example of a high voltage transistor.
  • the JFET 14B is made of SiC, and a source electrode 14B4 and a drain electrode 14B5 are formed on the respective surfaces of N + type regions 14B2 and 14B3 formed so as to sandwich the N type region 14B1. Further, a P + type region 14B6 is formed in a part of the N type region 14B1, and a gate electrode 14B7 is connected to the P + type region 14B6.
  • SIT Static Induction Transistor
  • a normally-off type device is also designed by appropriately reducing the distance between the P + type regions 14B6. However, when this distance is reduced, the on-resistance increases. Therefore, there is a trade-off with on-resistance and the design is difficult.
  • the threshold value is designed to be about ⁇ 5V to ⁇ 15V.
  • SiC-based JFET 14B has high breakdown voltage characteristics and low on-resistance characteristics, and is therefore suitable as the high breakdown voltage transistor 14.
  • SiC-JFET has a large area and a highly reliable element on the market, and can be prepared relatively easily.
  • the semiconductor diode device 10 according to the first embodiment is obtained by connecting a MOSFET 13 and a high voltage transistor 14.
  • a MOSFET 13 a MOSFET 13
  • a high voltage transistor 14 a MOSFET 13
  • a high voltage transistor 14 a MOSFET 13
  • it can be handled in the same manner as a diode composed of a single element, and thus it is convenient and preferable.
  • an embodiment in which two elements are incorporated into one package will be described.
  • FIG. 5 is a schematic diagram of a semiconductor diode device according to Embodiment 2 of the present invention.
  • the semiconductor diode device 20 includes an anode electrode 21, a cathode electrode 22, a MOSFET 23, a high breakdown voltage transistor 24, and a conductive substrate 25 mounted in a single package 26.
  • the MOSFET 23 and the high voltage transistor 24 are mounted on the conductive substrate 25.
  • the MOSFET 23 is a vertical MOSFET and includes a drain electrode (not shown) formed on the back surface, and a source electrode 23a and a gate electrode 23b formed on the front surface.
  • the drain electrode formed on the back surface is directly connected to the conductive substrate 25.
  • the source electrode 23a is connected to the anode electrode 21 with a wiring wire W1.
  • the gate electrode 23b is connected to the source electrode 23a by the wiring wire W2.
  • the high breakdown voltage transistor 24 is a lateral GaN-HEMT, and includes a source electrode 24a, a gate electrode 24b, and a drain electrode 24c formed on the surface.
  • the source electrode 24a is connected to the drain of the MOSFET 23 through the conductive substrate 25 by the wiring wire W3.
  • the gate electrode 24b is connected to the anode electrode 21 with a wiring wire W4.
  • the drain electrode 24c is connected to the cathode electrode 22 by a wiring wire W5.
  • the components including the MOSFET 23 and the high breakdown voltage transistor 24 are incorporated in one package 26. Therefore, part of the anode electrode 21 and the cathode electrode 22 protrudes from the package 26 as terminals, and can be handled in the same manner as a diode composed of a single element.
  • FIG. 6 is a schematic diagram of a semiconductor diode device according to Embodiment 3 of the present invention.
  • the semiconductor diode device 30 includes an anode electrode 31, a cathode electrode 22, a MOSFET 33, and a high breakdown voltage transistor 24 that are mounted and incorporated in one package 36.
  • the cathode electrode 22 and the high breakdown voltage transistor 24 are the same as those of the semiconductor diode device 20 shown in FIG.
  • the MOSFET 33 and the high breakdown voltage transistor 24 are mounted on the anode electrode 31.
  • the MOSFET 33 is an up drain type MOSFET exemplified in Patent Document 1 and the like, and includes a source electrode (not shown) formed on the back surface, and a gate electrode 33b and a drain electrode 33c formed on the surface.
  • the source electrode formed on the back surface is directly connected to the anode electrode 31.
  • the gate electrode 33b is connected to the source electrode through the anode electrode 31 by the wiring wire W6.
  • the drain electrode 33c is connected to the source electrode 24a of the high breakdown voltage transistor 24 by a wiring wire W7.
  • the components including the MOSFET 33 and the high voltage transistor 24 are incorporated in one package 36. Therefore, part of the anode electrode 31 and the cathode electrode 22 protrudes from the package 36 as terminals, and can be handled in the same manner as a diode composed of a single element. Further, since the source electrode of the MOSFET 33 is formed on the back surface, a power wiring wire for connecting the source electrode and the anode electrode 31 can be omitted, and it is easy to directly connect them. As a result, there are merits such as a reduction in defect rate due to a reduction in assembly man-hours, a reduction in cost, and a reduction in inductance caused by wiring.
  • FIG. 7 is a schematic diagram of a semiconductor diode device according to Embodiment 4 of the present invention.
  • an anode electrode 21, a cathode electrode 42, a MOSFET 23, a high breakdown voltage transistor 44, and a conductive substrate 45 are mounted and incorporated in one package 46.
  • the anode electrode 21 and the MOSFET 23 are the same as those of the semiconductor diode device 20 shown in FIG.
  • the MOSFET 23 is mounted on the conductive substrate 45.
  • the high breakdown voltage transistor 44 is mounted on the cathode electrode 42.
  • the high breakdown voltage transistor 44 is a vertical SiC-JFET, and includes a drain electrode (not shown) formed on the back surface, and a source electrode 44a and a gate electrode 44b formed on the front surface.
  • the gate electrode 44b is connected to the anode electrode 21 with a wiring wire W8.
  • the source electrode 44a is connected to the drain of the MOSFET 23 through the conductive substrate 45 by the wiring wire W9.
  • the drain electrode is directly connected to the cathode electrode 42.
  • the components including the MOSFET 23 and the high breakdown voltage transistor 44 are incorporated in one package 46. Therefore, part of the anode electrode 21 and the cathode electrode 42 protrudes from the package 46 as terminals, and can be handled in the same manner as a diode made of a single element. Further, since the drain electrode of the high voltage transistor 44 is formed on the back surface, the power wiring wire for connecting the drain electrode and the cathode electrode 42 can be omitted, and it is easy to directly connect them. As a result, there are merits such as a reduction in defect rate due to a reduction in assembly man-hours, a reduction in cost, and a reduction in inductance caused by wiring.
  • FIG. 8 is a schematic diagram of a semiconductor diode device according to Embodiment 5 of the present invention.
  • the semiconductor diode device 50 includes an anode electrode 51, a cathode electrode 42, an up drain MOSFET 33, and a high breakdown voltage transistor 44, which is a vertical SiC-JFET, mounted in a single package 56. It is.
  • the MOSFET 33 is mounted on the anode electrode 51.
  • the high breakdown voltage transistor 44 is mounted on the cathode electrode 42.
  • the drain electrode 33c of the MOSFET 33 and the source electrode 44a of the high breakdown voltage transistor 44 are connected by a wiring wire W10.
  • the semiconductor diode device 50 is a combination of elements used in the semiconductor diode devices 30 and 40 according to the third and fourth embodiments.
  • both the power wiring wire for connecting the source electrode of the MOSFET 33 and the anode electrode 51 and the power wiring wire for connecting the drain electrode of the high voltage transistor 44 and the cathode electrode 42 are omitted. it can.
  • the merits of reducing the defective rate due to the reduction in assembly man-hours, reducing the cost, and further reducing the inductance caused by the wiring become more remarkable.
  • different elements MOSFET and high voltage transistor
  • the semiconductor diode device according to the present invention is useful for power devices used for power conversion devices such as inverters, motor drive devices, various power supply devices, uninterruptible power supplies, etc. that require high withstand voltage.
  • the wide band gap semiconductor material is a gallium nitride compound semiconductor or silicon carbide, but is not particularly limited as long as a desired high breakdown voltage can be obtained. Further, the constituent material of the MOSFET is not limited to silicon, and the threshold voltage may be 1 V or less.
  • the semiconductor diode device according to the present invention is suitable for application to a power device.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Cette invention concerne un dispositif à diodes semi-conductrices, comprenant un transistor haute tension normalement ouvert (14) fait d'un matériau semi-conducteur à grande largeur de bande interdite, et un transistor MOSFET (13) monté en série avec le transistor haute tension (14), présentant une tension de tenue inférieure à celle du transistor haute tension (14) et une tension de seuil allant de 0,3 à 1 V inclus, le drain et la source du transistor MOSFET (13) étant reliés. Il est ainsi possible de former un dispositif à diodes semi-conductrices assurant simultanément une réduction des chutes de tension directe et du courant de fuite.
PCT/JP2013/058354 2012-04-12 2013-03-22 Dispositif à diodes semi-conductrices WO2013153937A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012090930A JP2013219306A (ja) 2012-04-12 2012-04-12 半導体ダイオード装置
JP2012-090930 2012-04-12

Publications (1)

Publication Number Publication Date
WO2013153937A1 true WO2013153937A1 (fr) 2013-10-17

Family

ID=49327508

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/058354 WO2013153937A1 (fr) 2012-04-12 2013-03-22 Dispositif à diodes semi-conductrices

Country Status (2)

Country Link
JP (1) JP2013219306A (fr)
WO (1) WO2013153937A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110959193A (zh) * 2019-02-21 2020-04-03 深圳市汇顶科技股份有限公司 具有低阈值电压和高击穿电压的二极管
WO2020168704A1 (fr) * 2019-02-21 2020-08-27 Shenzhen GOODIX Technology Co., Ltd. Diode à faible tension de seuil et à tension de claquage élevée

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6211829B2 (ja) * 2013-06-25 2017-10-11 株式会社東芝 半導体装置
JP6203097B2 (ja) * 2014-03-20 2017-09-27 株式会社東芝 半導体装置
JP7024688B2 (ja) * 2018-11-07 2022-02-24 株式会社デンソー 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319368A (ja) * 1997-05-22 1998-12-04 Rohm Co Ltd 表示パネルの駆動装置
JP2002231820A (ja) * 2001-01-30 2002-08-16 Sanyo Electric Co Ltd パワー半導体装置及び半導体装置の製造方法
JP2008198735A (ja) * 2007-02-09 2008-08-28 Sanken Electric Co Ltd 整流素子を含む複合半導体装置
JP2009182107A (ja) * 2008-01-30 2009-08-13 Furukawa Electric Co Ltd:The 半導体装置
WO2011011107A2 (fr) * 2009-07-21 2011-01-27 Cree, Inc. Circuit redresseur rapide

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール
JP5844956B2 (ja) * 2009-03-05 2016-01-20 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319368A (ja) * 1997-05-22 1998-12-04 Rohm Co Ltd 表示パネルの駆動装置
JP2002231820A (ja) * 2001-01-30 2002-08-16 Sanyo Electric Co Ltd パワー半導体装置及び半導体装置の製造方法
JP2008198735A (ja) * 2007-02-09 2008-08-28 Sanken Electric Co Ltd 整流素子を含む複合半導体装置
JP2009182107A (ja) * 2008-01-30 2009-08-13 Furukawa Electric Co Ltd:The 半導体装置
WO2011011107A2 (fr) * 2009-07-21 2011-01-27 Cree, Inc. Circuit redresseur rapide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110959193A (zh) * 2019-02-21 2020-04-03 深圳市汇顶科技股份有限公司 具有低阈值电压和高击穿电压的二极管
WO2020168704A1 (fr) * 2019-02-21 2020-08-27 Shenzhen GOODIX Technology Co., Ltd. Diode à faible tension de seuil et à tension de claquage élevée
US11190177B2 (en) 2019-02-21 2021-11-30 Shenzhen GOODIX Technology Co., Ltd. Diode with low threshold voltage and high breakdown voltage
CN110959193B (zh) * 2019-02-21 2023-09-05 深圳市汇顶科技股份有限公司 具有低阈值电压和高击穿电压的二极管

Also Published As

Publication number Publication date
JP2013219306A (ja) 2013-10-24

Similar Documents

Publication Publication Date Title
JP5492238B2 (ja) 低電圧デバイス保護付き高電圧複合半導体デバイス
US20190267482A1 (en) Power semiconductor device with an auxiliary gate structure
US7825435B2 (en) Diode-like composite semiconductor device
JP6097298B2 (ja) 信頼性が高められたハイパワー半導体電子部品
US7719055B1 (en) Cascode power switch topologies
JP4645313B2 (ja) 半導体装置
JP6442803B2 (ja) エンハンスメントモードｉｉｉ族窒化物デバイス
US7852137B2 (en) Normally-off electronic switching device for on-off control of electric circuit
JP5548909B2 (ja) 窒化物系半導体装置
US9160326B2 (en) Gate protected semiconductor devices
US20090072269A1 (en) Gallium nitride diodes and integrated components
JP2009200096A (ja) 窒化物半導体装置とそれを含む電力変換装置
US9300223B2 (en) Rectifying circuit and semiconductor device
US10505032B2 (en) Semiconductor device with III-nitride channel region and silicon carbide drift region
WO2013153937A1 (fr) Dispositif à diodes semi-conductrices
JP2010166793A (ja) 双方向スイッチ及びスイッチング素子
JP5526174B2 (ja) ターンオン防止付き複合半導体デバイス
US10003331B2 (en) Semiconductor device including normally-off type transistors and normally-on type transistor connected series
Quay et al. Overview and recent progress on the development of compact GaN-based power converters
Shenai True figure of merit (FOM) of a power semiconductor switch
WO2023281998A1 (fr) Dispositif à semi-conducteur au nitrure
CN105070752A (zh) 一种具有集成二极管的异质结器件
KR20160077936A (ko) 다이오드 내장형 반도체 소자
KR101559111B1 (ko) 양방향 스위칭 소자 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13775651

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13775651

Country of ref document: EP

Kind code of ref document: A1