WO2013076909A1 - 電気部品用樹脂、半導体装置、及び配線基板 - Google Patents

電気部品用樹脂、半導体装置、及び配線基板 Download PDF

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Publication number
WO2013076909A1
WO2013076909A1 PCT/JP2012/006652 JP2012006652W WO2013076909A1 WO 2013076909 A1 WO2013076909 A1 WO 2013076909A1 JP 2012006652 W JP2012006652 W JP 2012006652W WO 2013076909 A1 WO2013076909 A1 WO 2013076909A1
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Prior art keywords
resin
phase change
change material
semiconductor device
filler
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PCT/JP2012/006652
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English (en)
French (fr)
Inventor
南尾　匡紀
宏樹 池内
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パナソニック株式会社
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Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to US13/994,253 priority Critical patent/US9265144B2/en
Priority to CN201280006993.2A priority patent/CN103339722B/zh
Priority to JP2013523398A priority patent/JP5591405B2/ja
Priority to EP12851940.2A priority patent/EP2784808B8/en
Publication of WO2013076909A1 publication Critical patent/WO2013076909A1/ja

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    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

Definitions

  • the present invention relates to a resin for electrical parts, a semiconductor device in which a semiconductor element is sealed with a resin, and a wiring board.
  • inverter control devices are required to be smaller and lighter.
  • a resin-encapsulated semiconductor device mounted inside an inverter control device has a configuration aiming for a reduction in size and weight.
  • a resin-sealed semiconductor device incorporating a power semiconductor element or a wiring board on which an electrical component such as a semiconductor device is mounted is required to have a high breakdown voltage between adjacent electrodes or to improve heat dissipation performance.
  • Patent Document 1 In the resin-encapsulated semiconductor device, the heat dissipation performance from the chip to the upper surface of the package is limited by the thermal conductivity of the resin used for encapsulation. Therefore, in Patent Document 1, as shown in FIG. 11, a metal case 33 that covers the chip 31 is attached to the substrate 32, and the inside of the case 33 is filled with the refrigerant 34. In the resin-encapsulated semiconductor device of Patent Document 1, heat generated from the chip 31 is transmitted to the case 33 by the thermal convection of the refrigerant 34, so that the thermal conductivity to the outside is higher than that of the conventional resin-encapsulated semiconductor device. Can be increased.
  • FIG. 12 is a schematic cross-sectional view of a semiconductor device 1001 disclosed in Patent Document 2.
  • the semiconductor device 1001 includes a heat sink 1003, a substrate 1005, and an element 1007.
  • the element 1007 mounted on the substrate 1005 is sealed with a sealing material 1013.
  • the sealing material 1013 contains a phase change material 1103 in the form of microcapsules.
  • an epoxy resin is disclosed.
  • a heat conductive material 1009 is filled between the element 1007 and the sealing material 1013.
  • the element 1007 and the sealing material 1013 are thermally coupled by a heat conductive material 1009.
  • the filling process of the refrigerant 34 into the case 33 may be complicated.
  • the fluorine-type inert liquid or ethanol with a high dielectric constant is used as the refrigerant
  • the semiconductor device of Patent Document 2 does not take into account the withstand voltage, it is difficult to realize a high withstand voltage.
  • An object of the present invention is to provide a resin for an electrical component, a semiconductor device, and a wiring board that have good heat dissipation performance and can realize a high breakdown voltage.
  • the resin for electrical parts of the present invention is configured by mixing a filler into an electrically insulating resin, and the filler absorbs heat and changes in phase due to phase change. It is characterized in that it is formed by encapsulating a variable substance in an electrically insulating capsule.
  • a semiconductor device of the present invention is characterized in that a semiconductor element is sealed with the resin for electrical parts.
  • the wiring board of the present invention is characterized in that a conductor pattern is formed on a base substrate made of the resin for electric parts.
  • another wiring board includes a layer in which an electrical component or a conductor pattern is formed directly or via an intermediate layer in the electrical component resin.
  • An electrical circuit is constructed.
  • the present invention it is possible to provide a resin for electric parts, a semiconductor device, and a wiring board that have good heat dissipation performance and can achieve high breakdown voltage.
  • FIG. 1 shows a first semiconductor device according to the first embodiment.
  • the first semiconductor device in FIG. 1 is a resin-encapsulated semiconductor device, and is an example of a structure using an electrically insulating resin for electrical components as a sealing resin.
  • the power element T1 is fixed to the first lead frame 1, and the control element T2 is fixed to the second lead frame 2.
  • the first and second lead frames 1 and 2 are fixed to the upper surface of the heat sink 3 via insulating sheets 5a and 5b.
  • the power element T1 and the control element T2 are examples of semiconductor elements.
  • the insulating sheets 5a and 5b are made of, for example, a heat conductive electric insulating material, and have a three-layer structure in which an electric insulating layer is sandwiched between a plurality of adhesive layers.
  • the exterior body 4 is intended to integrate the first lead frame 1 and the second lead frame 2 and to protect the power element T1 and the control element T2.
  • the exterior body 4 is composed of a first resin 6 which is an example of a thermosetting resin such as epoxy.
  • the first resin 6 is mixed with a filler 7 which is a feature of the present invention.
  • the filling rate of the filler 7 in the first resin 6 of the first embodiment is set to 20% or more and 80% or less depending on the heat absorption or insulation characteristics described later, the material characteristics of the first resin 6, and the like.
  • the resin for sealing for example, the first resin 6
  • the filler 7 is configured by enclosing a phase change material 8 that changes the phase by absorbing the surrounding heat in an electrically insulating capsule 9.
  • Fig.2 (a) shows the expanded sectional view of the filler 7 of a normal temperature state. In the normal temperature state shown in FIG. 2 (a), the state of the phase change material 8 is solid.
  • FIG. 2B shows the filler 7 in a state of absorbing heat generated from the power element T1 and the like. In the state of absorbing heat shown in FIG. 2 (b), the state of the phase change material 8 is liquid.
  • the filler 7 is configured by injecting erythritol as a phase change material 8 into a capsule 9 made of silica (SiO 2 ).
  • the capsule 9 having a particle size of 60 ⁇ m is used.
  • capsules 9 having a particle diameter of 2 ⁇ m or more and 100 ⁇ m or less can be used.
  • the capsule 9 has a shell thickness of 0.1 ⁇ m or more and 20 ⁇ m or less.
  • erythritol having a volume 60% of the volume of the capsule 9 is used as the phase change material 8 in the capsule 9.
  • the volume of erythritol as the phase change material 8 is preferably 30% or more and 70% or less with respect to the volume of the capsule 9.
  • a gas layer 10 As the gas layer 10, various inert gases and air can be used. In this Embodiment 1, air was used for the gas layer 10 as what has high insulation.
  • Erythritol is a solid as shown in FIG. 2 (a) in the normal temperature state, but expands by changing to a liquid state at a melting point of 118 ° C.
  • 118 degreeC which is a melting point of the erythritol which is an example of the phase change substance 8 is lower than the heat resistant temperature 125 degreeC of the power element T1. That is, in the first embodiment, the phase change material 8 having a melting point lower than the heat resistant temperature of the power element T1 is used.
  • the melting point of the phase change material 8 is configured to be lower than the heat resistance temperature of the power element T1 as described above, so that the phase change material 8 absorbs heat and reaches the first heat resistance temperature or higher. The possibility that the temperature of the semiconductor device rises is reduced.
  • the capsule 9 is configured to have a strength that does not rupture even by melting and expansion of the phase change material 8 so that the phase change material 8 does not flow outside.
  • FIG. 3 is a temperature characteristic diagram of heat absorption and heat dissipation accompanying heat generation of the semiconductor element according to the first embodiment of the present invention.
  • FIG. 9 is an enlarged cross-sectional view of a conventional semiconductor device, and
  • FIG. 10 is a temperature characteristic diagram of heat absorption and heat dissipation accompanying heat generation of the semiconductor element of the conventional example.
  • the first semiconductor device of the first embodiment uses the first resin 6 mixed with the filler 7. Therefore, in the first semiconductor device of the first embodiment, when the power element T1 generates heat and the temperature of the first resin 6 rises, the temperature rises as shown by the solid line in FIG. 3 and then the melting point 118 of erythritol. When the temperature rises to ° C, the temperature rise stops. This is because the phase change material 8 (erythritol) melts and changes in phase from a solid to a liquid, and the heat of fusion is absorbed by the phase change material 8 along with this phase change, and the gradient of the temperature rise is the melting of Eristoel. This is because it rapidly decreases near the point.
  • the phase change material 8 erythritol
  • the first semiconductor device according to the first embodiment exhibits the characteristics as shown in FIG. 3 and can delay the time to reach the temperature peak exceeding the heat resistance temperature of the power element T1. That is, the first semiconductor device of the present invention can improve the withstand voltage as well as good heat dissipation characteristics by kneading the microcapsules encapsulating the phase change material into a desired resin. Specifically, the good heat dissipation characteristic is to develop an endothermic action when the first semiconductor device has a sharp temperature rise. Further, the improvement of the withstand voltage is to prevent the concentration of the space electric field and to lower the dielectric constant against the voltage increase which becomes a problem during the instantaneous driving of the first semiconductor device.
  • “Section H” is a heat generation section due to power loss
  • “Section R” is a heat dissipation section in which the temperature increase stops due to heat generation and the temperature decreases.
  • “section H1”, which is a part of section H, is a section where the temperature rise is stopped due to heat absorption due to the phase change of the phase change material 8.
  • “section H2”, which is a part of the section H is a section in which the temperature of the first semiconductor device is rising without being able to absorb heat by the phase change material 8.
  • the relationship between the “section H1” and the “section H2” depends on the amount of the phase change material 8 in the filler 7. As the amount of the phase change material 8 increases, the “section H1” becomes longer.
  • the phantom line (two-dot chain line) of FIG. 3 shows the temperature rise change in the case of the conventional example shown in FIG. That is, the phantom line in FIG. 3 represents the temperature rise change of the comparative example when the first resin in which the filler 7 is not mixed is used.
  • the first resin 6 of the first embodiment it is possible to prevent the exterior body 4 from reaching a temperature peak and improve the reliability associated with the temperature rise of the semiconductor device. it can.
  • the first resin 6 according to the first embodiment can alleviate the temperature effect at the time of system back electromotive force, and has the same external dimensions as conventional ones. Even the inverter of the motor can improve the driving performance of the motor.
  • the first resin 6 mixed with the filler 7 of the present invention has an excellent withstand voltage during heat generation.
  • the conventional semiconductor device shown in FIG. 9 is compared as a comparative example.
  • the entire thermosetting resin 26 of the exterior body 24 is epoxy.
  • the dielectric constant of epoxy is “4”
  • the dielectric constant of capsule 9 (silica) of filler 7 is “2.5”
  • the dielectric constant of phase change material 8 is “2.5”. 1.5 ". Therefore, in the semiconductor device of the first embodiment, the dielectric constant of the filler 7 is lower than the dielectric constant of the epoxy, and an improvement in dielectric strength between the electrodes in the semiconductor device can be realized. Compared with the case where ethanol is used as the refrigerant 34 in the semiconductor device in Patent Document 1, since the dielectric constant of ethanol is “24”, the semiconductor device of the first embodiment greatly increases the withstand voltage between the electrodes. Can be improved.
  • FIGS. 4 to 8 show a wiring board as an example of a structure using the resin for electric parts of the first embodiment described above as an insulating resin.
  • the structures shown in FIGS. 4 to 8 will be described as Examples 1 to 5.
  • Example 1- In the wiring board 11a of Example 1 shown in FIG. 4, the conductor pattern 13 is formed on the upper surface of the base substrate 12. Filler 7 is mixed in electrically insulating first resin 6 constituting base substrate 12. In the same manner as in the first embodiment, the filler 7 is configured by enclosing a phase change material 8 that absorbs heat and changes phase in an insulating capsule 9. The semiconductor device 14 is configured to thermally couple the heat radiating plate 3 to the conductor pattern 13 and radiate heat through the conductor pattern 13.
  • the base substrate 12 with the resin for electrical components in which the filler 7 is mixed with the first insulating resin 6, the heat generated by the semiconductor device 14 is generated by the endothermic action of the melting heat of the phase change material 8.
  • the heat can be radiated through the base substrate 12. Therefore, the time to reach the temperature peak exceeding the heat resistance temperature of the semiconductor device 14 can be delayed, and the semiconductor device 14 can be protected from thermal destruction.
  • Example 2- The wiring board 11b of the second embodiment shown in FIG. 5 is different from the first embodiment only in that the conductor pattern 13 is embedded in the base substrate 12.
  • the wiring board 11c of Example 3 shown in FIG. 6 is a multilayer wiring board with an inner layer circuit.
  • the wiring board 11c is configured by laminating layers 18 and 19 with the intermediate layer 20 interposed therebetween to construct an electric circuit.
  • an electrical component of the active element 15 or the passive element 16 or a conductor pattern 17 is formed.
  • the filler 7 is mixed in the first resin 6 constituting at least one of the layers 18 and 19 and the intermediate layer 20.
  • the electrical component is prevented from being thermally destroyed by the endothermic action of the heat of fusion of the phase change material 8 in the filler 7. Not only can it be protected, it can also be expected to have a shielding effect in the high frequency band.
  • This shielding effect in the high frequency band is an effect that the filler 7 has a lower dielectric constant than the first resin 6.
  • Example 4 The wiring board 11d of Example 4 shown in FIG. 7 is different from Example 3 described above only in that the layers 18 and 19 are laminated without the intermediate layer 20 interposed therebetween.
  • Example 5 The wiring board 11e of Example 5 shown in FIG. 8 is different from Example 3 described above only in that a shield layer 21 that blocks the passage of electromagnetic waves is formed on the intermediate layer 20.
  • the material of the capsule 9 of the filler 7 is made of silica (SiO 2).
  • an organic material such as electrically insulating melamine or silicone can be used.
  • the phase change material 8 of the filler 7 has been described as being erythritol.
  • the phase change material 8 is a material that undergoes a phase change at a temperature lower than the heat resistance temperature of the electrical component that is the device to be used.
  • Other sugar alcohols can be used as long as the dielectric constant is smaller than that of the mixed resin.
  • Other sugar alcohols include, for example, sorbitol, xylitol, paraffin having a dielectric constant of “2” and a melting point of “70 ° C.”, dielectric constant of “2.3” and a melting point of “125 ° C.”
  • a phase change material such as “polyethylene” can be used as the phase change material 8 of the filler 7.
  • the heat absorption characteristics and heat radiation characteristics can be adjusted by adjusting the additive and its amount.
  • the description has been given on the assumption that the filler 7 is mixed in all areas of the board.
  • the same can be applied to a prepreg in which the electrically insulating first resin mixed with the filler 7 is used as a matrix resin for impregnating a base material such as glass fiber or carbon fiber.
  • the heat of fusion of the phase change material 8 of each of the above embodiments uses latent heat necessary for phase transition from solid to liquid.
  • the phase change material 8 may be configured using only latent heat necessary for phase transition from the solid to the intermediate phase state, It is also possible to configure using only the latent heat necessary for the phase transition from the intermediate phase state to the liquid.
  • the space between the phase change material 8 and the capsule 9 is the gas layer 10.
  • a liquid layer or a gel layer may be provided between the phase change material 8 and the capsule 9.
  • the characteristic required for the layer between the phase change material 8 and the capsule 9 is that the dielectric constant is equal to or lower than the dielectric constant of the first resin 6 which is an example of the resin.
  • the present invention contributes to reducing the size of various inverter devices such as an air conditioner that requires high power control, as well as improving the reliability of an electrical structure in a poor use environment.
  • T1 power element T2 control element 1 1st, 2nd lead frame 3 heat sink 4 exterior body 5a, 5b insulating sheet 6 first resin 7 filler 8 phase change material 9 capsule 10 gas layer 11a, 11b, 11c, 11d, 11e Wiring board 12 Base board 13, 17 Conductor pattern 14 Semiconductor device 15 Active element 16 Passive element 18, 19 layer 20 Intermediate layer 21 Shield layer

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Abstract

　半導体素子Ｔ１を第１樹脂６によって封止することで樹脂パッケージした構造体としての半導体装置において、第１樹脂６に、周囲の熱を吸熱して相変化することで絶縁耐圧が上昇する相変化物質を電気絶縁性のカプセルに封入したフィラー７が混入されており、フィラー７の作用によって、放熱性能が良好で、しかも高耐圧の構造体を実現する。

Description

電気部品用樹脂、半導体装置、及び配線基板
　本発明は、電気部品用樹脂、半導体素子を樹脂で封止した半導体装置、及び配線基板に関する。
　例えばインバーター制御機器は、小型化および軽量化が求められている。同様に、インバーター制御機器の内部に実装される樹脂封止型半導体装置は、小型化および軽量化を目指した構成となっている。また、パワー半導体素子を内蔵した樹脂封止型半導体装置又は半導体装置などの電気部品が実装された配線基板では、隣接する電極間の高耐圧化又は放熱性能の向上などが求められている。
　樹脂封止型半導体装置において、チップからパッケージ上面への放熱性能は、封止に使用している樹脂の熱伝導度で制約される。そのため、特許文献１では、図１１に示すように、チップ３１を覆うような金属製のケース３３を基板３２に取り付け、ケース３３の内部に冷媒３４を充填している。特許文献１の樹脂封止型半導体装置は、チップ３１から発生した熱が冷媒３４の熱対流によってケース３３に伝えられるため、従来の樹脂封止型半導体装置に比べて外部への熱伝導性を高めることができる。
　また、特許文献２のパルス駆動電力半導体用の冷却システムは、相変化物質をマイクロカプセルの形で封止材料に含有させて、熱を吸収している。図１２は特許文献２に開示の半導体装置１００１の概略断面図である。半導体装置１００１は、放熱板１００３、基板１００５および素子１００７を備えている。基板１００５に実装されている素子１００７は、封止材料１０１３で封止されている。封止材料１０１３には、相変化物質１１０３がマイクロカプセルの形で含有されている。封止材料１０１３の一例として、エポキシ樹脂が開示されている。なお、素子１００７と封止材料１０１３との間には、熱伝導材料１００９が充填されている。素子１００７と封止材料１０１３とは、熱伝導材料１００９によって熱結合されている。
特開２００８－４６８８号公報 米国特許第６８４８５００号明細書
　しかしながら、特許文献１の樹脂封止型半導体装置では、ケース３３への冷媒３４の充填工程が煩雑になる場合がある。また、冷媒３４としては、誘電率の高いフッ素系不活性液又はエタノールが使用されるため、放熱性能及び絶縁耐圧に限界の兆しが見えてきている。
　また、特許文献２の半導体装置は、絶縁耐圧を考慮していない構成のため、高耐圧を実現することは困難である。
　本発明は、放熱性能が良好であると共に、高耐圧を実現できる電気部品用樹脂、半導体装置、及び配線基板を提供することを目的とする。
　上記課題を解決するために、本発明の電気部品用樹脂は、電気絶縁性の樹脂にフィラーを混入することで構成され、前記フィラーは、吸熱して相変化することで絶縁耐圧が変化する相変化物質を電気絶縁性のカプセルに封入して形成されたことを特徴とする。
　また、上記課題を解決するために、本発明の半導体装置は、前記電気部品用樹脂によって、半導体素子を封止したことを特徴とする。
　また、上記課題を解決するために、本発明の配線基板は、前記電気部品用樹脂により構成されたベース基板に、導体パターンを形成したことを特徴とする。
　また、上記課題を解決するために、本発明の別の配線基板は、前記電気部品用樹脂の内部に、電気部品又は導体パターンが形成された層を、直接又は中間層を介して積層して電気回路が構築されたことを特徴とする。
　本発明によると、放熱性能が良好であると共に、高耐圧を実現できる電気部品用樹脂、半導体装置、及び配線基板を提供することができる。
本発明の実施の形態１にかかる半導体装置の拡大断面図 本発明の実施の形態１にかかるフィラーの拡大断面図 本発明の実施の形態１にかかる半導体素子の発熱に伴う吸熱と放熱の温度特性図 本発明の実施の形態２にかかる配線基板の実施例１の拡大断面図 実施例２の配線基板の拡大断面図 実施例３の配線基板の拡大断面図 実施例４の配線基板の拡大断面図 実施例５の配線基板の拡大断面図 従来例の半導体装置の拡大断面図 従来例の半導体素子の発熱に伴う吸熱と放熱の温度特性図 特許文献１の半導体装置の拡大断面図 特許文献２の半導体装置の拡大断面図
　　（実施の形態１）
　図１は、本実施の形態１の第１半導体装置を示す。図１の第１半導体装置は、樹脂封止型半導体装置であって、電気絶縁性の電気部品用樹脂を封止樹脂として使用した構造体の一例である。
　この第１半導体装置は、パワー素子Ｔ１が第１リードフレーム１に固定され、制御素子Ｔ２が第２リードフレーム２に固定されている。第１，第２リードフレーム１，２は、絶縁シート５ａ，５ｂを介して放熱板３の上面に固定されている。パワー素子Ｔ１、制御素子Ｔ２は、半導体素子の一例である。絶縁シート５ａ，５ｂは、例えば、熱伝導性の電気絶縁材料で構成され、電気絶縁層を複数層の接着層で挟んだ３層構造を有する。外装体４は、第１リードフレーム１及び第２リードフレーム２の一体化と、パワー素子Ｔ１及び制御素子Ｔ２の保護とを目的とするものである。外装体４は、例えばエポキシ等の熱硬化型樹脂の一例である第１樹脂６から構成される。第１樹脂６には、本発明の特徴であるフィラー７が混入されている。本実施の形態１の第１樹脂６中のフィラー７の充填率は、後述する吸熱又は絶縁の特性、第１樹脂６の材料特性などに応じて、２０％以上かつ８０％以下としている。
　本発明では、封止をするための樹脂（例えば、第１樹脂６）としては、成形可能な樹脂であると共に、誘電率がフィラー７より高いものを用いることが望ましい。このような樹脂およびフィラー７を用いることで、半導体装置において、瞬間的な電圧上昇に対応した絶縁耐圧の特性を実現することができる。
　このフィラー７は、図２（ａ）に示すように、周囲の熱を吸熱して相変化する相変化物質８を電気絶縁性のカプセル９に封入して、構成されている。図２（ａ）は、常温状態のフィラー７の拡大断面図を示す。図２（ａ）に示す常温状態では、相変化物質８の状態は固体である。図２（ｂ）は、パワー素子Ｔ１などから発生した熱を吸収した状態のフィラー７を示す。図２（ｂ）に示す熱を吸収した状態では、相変化物質８の状態は液体である。
　具体的には、フィラー７は、シリカ（ＳｉＯ２）製のカプセル９の中に、相変化物質８としてのエリスリトール（erythritol）を注入することで構成されている。本実施の形態１では、カプセル９として、粒径６０μｍのものを使用した。なお、本発明においては、カプセル９としては、粒径２μｍ以上かつ１００μｍ以下のものが使用可能である。本発明においては、カプセル９の殻厚みは、０．１μｍ以上かつ２０μｍ以下である。本実施の形態１では、カプセル９内の相変化物質８として、カプセル９の容積の６０％の体積のエリスリトールを用いている。なお、相変化物質８としてのエリスリトールの体積は、カプセル９の容積に対して３０％以上かつ７０％以下が望ましい。カプセル９と相変化物質８の間は、気体層１０である。気体層１０としては、各種の不活性ガスや空気を使用することができる。本実施の形態１では、高い絶縁性を有するものとして、気体層１０に空気を使用した。
　エリスリトールは、常温状態では、図２（ａ）に示すように固体であるが、融解点１１８℃で液体状態に相変化して膨張する。なお、相変化物質８の一例であるエリスリトールの融解点である１１８℃は、パワー素子Ｔ１の耐熱温度１２５℃よりも低い。すなわち、本実施の形態１では、パワー素子Ｔ１の耐熱温度よりも低い融解点を有する相変化物質８を用いている。本発明は、このように相変化物質８の融解点がパワー素子Ｔ１の耐熱温度より低くなるように構成することで、この相変化物質８で吸熱し、パワー素子Ｔ１の耐熱温度以上まで第１半導体装置の温度が上昇する可能性を軽減させている。なお、カプセル９は、相変化物質８が外部に流出しないように、この相変化物質８の融解膨張によっても破裂しない強度に構成されている。
　本発明の第１半導体装置が、従来例に比べて温度が上昇する可能性が軽減していることについて、図３と、図９及び図１０を用いて説明する。
　図３は、本発明の実施の形態１にかかる半導体素子の発熱に伴う吸熱と放熱の温度特性図である。図９は、従来例の半導体装置の拡大断面図であり、図１０は、従来例の半導体素子の発熱に伴う吸熱と放熱の温度特性図である。
　本実施の形態１の第１半導体装置は、フィラー７を混入した第１樹脂６を使用している。そのため、本実施の形態１の第１半導体装置では、パワー素子Ｔ１が発熱して第１樹脂６が温度上昇すると、図３に実線で示したように温度上昇した後、エリスリトールの融解点の１１８℃に上昇した際に、温度上昇が止まる。これは、相変化物質８（エリスリトール）が融解して固体から液体に相変化し、この相変化に伴って融解熱が相変化物質８に吸熱されて、温度上昇の傾きがエリストリールの融解点付近で急激に小さくなるためである。そのため、本実施の形態１の第１半導体装置は、図３のような特性を示すと共に、パワー素子Ｔ１の耐熱温度を越える温度ピークに至る時間を遅らせることができる。
　すなわち、本発明の第１半導体装置は、相変化物質を封入したマイクロカプセルを所望の樹脂に混練することにより、良好な放熱特性と共に、絶縁耐圧を向上させることができる。具体的には、良好な放熱特性とは、第１半導体装置の急峻な温度上昇時の吸熱作用を発現させることである。また、絶縁耐圧の向上とは、第１半導体装置の瞬間的な駆動時に課題となる電圧上昇に対して、空間電界集中を防ぐと共に誘電率を低下させることである。
　なお、図３の実線において、“区間Ｈ”が、電力損失に伴う発熱区間であり、“区間Ｒ”が、発熱により温度上昇が停止して温度低下する放熱区間である。また、区間Ｈの一部である“区間Ｈ１”は、相変化物質８の相変化に伴って吸熱されて、温度上昇が止まっている区間である。また、区間Ｈの一部である“区間Ｈ２”は、相変化物質８で吸熱できずに第１半導体装置の温度が上昇している区間である。この“区間Ｈ１”と“区間Ｈ２”の関係は、フィラー７内の相変化物質８の量に依存する。相変化物質８の量が多いほど、“区間Ｈ１”が長くなる。
　なお、図３の仮想線（二点鎖線）は、図１０に示す従来例の場合の温度上昇変化を示すものである。すなわち、図３の仮想線は、フィラー７を混入しなかった第１樹脂を使用した場合の比較例の温度上昇変化を表している。
　このように、本実施の形態１の第１樹脂６を使用することで、外装体４が温度ピークに到達する事態の発生を防止し、半導体装置の温度上昇に伴う信頼性を向上させることができる。本実施の形態１の第１樹脂６は、例えば、モータを駆動するインバーターのドライバー用の半導体装置の場合には、系統逆起電力時の温度影響を緩和することができ、従来と同じ外形寸法のインバーターであってもモータの運転性能を向上させることができる。
　さらに、本発明のフィラー７を混入させた第１樹脂６は、発熱時の絶縁耐圧も優れている。この絶縁耐圧について、図９に示す従来の半導体装置を比較例として比較する。なお、図９に示す従来の半導体装置は、外装体２４の熱硬化型樹脂２６の全部がエポキシである。
　ここで、エポキシの誘電率が“４”であるのに対して、フィラー７のカプセル９（シリカ）の誘電率が“２．５”であり、相変化物質８（エリスリトール）の誘電率が“１．５”である。そのため、本実施の形態１の半導体装置では、フィラー７の誘電率がエポキシの誘電率よりも低くなり、半導体装置における電極間の絶縁耐圧の向上を実現できる。また、特許文献１における半導体装置に冷媒３４としてエタノールを使用した場合と比較すると、エタノールの誘電率が“２４”であるため、本実施の形態１の半導体装置は、電極間の絶縁耐圧を大幅に向上させることができる。
　　（実施の形態２）
　図４～図８は、前述の実施の形態１の電気部品用樹脂を絶縁性樹脂として使用した構造体の一例である配線基板を示す。図４～図８に示す構造体について、実施例１～実施例５として説明する。なお、実施の形態１と同様のものには同一の符号を付けて説明する。
　　　　　　　　　　　　　　－ 実施例１ －
　図４に示す実施例１の配線基板１１ａは、ベース基板１２の上面に導体パターン１３が形成されている。ベース基板１２を構成する電気絶縁性の第１樹脂６に、フィラー７が混入されている。フィラー７は、前述の実施の形態１と同様に、吸熱して相変化する相変化物質８を絶縁性のカプセル９に封入して構成されている。半導体装置１４は、放熱板３を導体パターン１３に熱的に結合して、導体パターン１３を介して放熱するよう構成されている。
　このように、電気絶縁性の第１樹脂６にフィラー７を混入した電気部品用樹脂でベース基板１２を構成することによって、相変化物質８の融解熱の吸熱作用によって、半導体装置１４の発熱を、ベース基板１２を介して放熱することができる。よって、半導体装置１４の耐熱温度を越える温度ピークに到達する時間を遅らせることができ、半導体装置１４を熱破壊から保護できる。
　　　　　　　　　　　　　　－ 実施例２ －
　図５に示す実施例２の配線基板１１ｂは、導体パターン１３がベース基板１２の中に埋め込まれている点だけが前述の実施例１と異なっている。
　　　　　　　　　　　　　　－ 実施例３ －
　図６に示す実施例３の配線基板１１ｃは、内層回路入りの多層配線基板である。配線基板１１ｃは、中間層２０を介して層１８，１９を積層して、電気回路が構築されている。層１８，１９の内部には、能動素子１５又は受動素子１６の電気部品または導体パターン１７が形成されている。実施例３では、各層１８，１９，中間層２０の少なくとも何れかを構成する第１樹脂６に、フィラー７が混入されている。
　このように、各層１８，１９，中間層２０を構成する電気部品用樹脂にフィラー７を混入することで、フィラー７内の相変化物質８の融解熱の吸熱作用によって、電気部品を熱破壊から保護できるだけでなく、高周波帯でのシールド効果も期待できる。この高周波帯でのシールド効果は、フィラー７が第１樹脂６に比べて低誘電率である効果である。
　　　　　　　　　　　　　　－ 実施例４ －
　図７に示す実施例４の配線基板１１ｄは、中間層２０を介さずに層１８，１９が積層されている点だけが、前述の実施例３と異なっている。
　　　　　　　　　　　　　　－ 実施例５ －
　図８に示す実施例５の配線基板１１ｅは、中間層２０に電磁波の通過を遮るシールド層２１が形成されている点だけが、前述の実施例３とは異なっている。
　上記の各実施の形態や各実施例では、フィラー７のカプセル９の材質がシリカ（ＳｉＯ２）製であるとして説明した。だが、フィラー７のカプセル９の材質としては、電気絶縁性のメラミン、シリコーンなどの有機系物質なども使用できる。
　また、上記の各実施の形態では、フィラー７の相変化物質８がエリスリトールであるとして説明したが、使用対象の素子である電気部品の耐熱温度未満の温度にて相変化する物質であって、誘電率が混入される樹脂よりも小さいものであれば、その他の糖アルコールを使用することもできる。その他の糖アルコールとしては、例えば、ソルビトール，キシリトール、又は、誘電率が“２”程度で融解点が“７０℃”程度のパラフィン、誘電率が“２．３”程度で融解点が“１２５℃”程度のポリエチレンなどの相変化物質が、フィラー７の相変化物質８として使用できる。また、何れの場合にも添加物とその量を調節することによって吸熱特性と放熱特性を調節できる。
　また、上記の各実施の形態の配線基板や多層配線基板では、基板の全ての領域にフィラー７が混入されたものとして説明した。だが、フィラー７の混入された電気絶縁性の第１樹脂を、ガラス繊維や炭素繊維などの基材に含浸させるマトリクス樹脂として使用した、プリプレグでも同様に実施できる。
　上記の各実施の形態の相変化物質８の融解熱は、固体から液体に相転移する時に必要な潜熱を利用したものであった。だが、固体と液体との中間的な相状態を有する相変化物質８の場合には、固体から前記中間的な相状態への相転移する時に必要な潜熱だけを利用して構成することや、前記中間的な相状態から液体への相転移する時に必要な潜熱だけを利用して構成することもできる。
　上記の各実施の形態のフィラー７は、相変化物質８とカプセル９の間が気体層１０であった。だが、相変化物質８とカプセル９の間が液体層またはゲル層であってもよい。この場合、相変化物質８とカプセル９の間の層に要求される特性は、その誘電率が樹脂の一例である第１樹脂６の誘電率以下であることである。
　本発明は、大電力制御が必要な空気調和装置などの各種のインバーター装置の小型化のほか、劣悪な使用環境における電気構造体の信頼性の向上に寄与する。
　Ｔ１　パワー素子
　Ｔ２　制御素子
　１，２　第１，第２リードフレーム
　３　放熱板
　４　外装体
　５ａ，５ｂ　絶縁シート
　６　第１樹脂
　７　フィラー
　８　相変化物質
　９　カプセル
　１０　気体層
　１１ａ，１１ｂ，１１ｃ，１１ｄ，１１ｅ　配線基板
　１２　ベース基板
　１３，１７　導体パターン
　１４　半導体装置
　１５　能動素子
　１６　受動素子
　１８，１９　層
　２０　中間層
　２１　シールド層

Claims (11)

  1. 　電気絶縁性の樹脂にフィラーを混入することで構成され、
    　前記フィラーは、吸熱して相変化することで絶縁耐圧が変化する相変化物質を電気絶縁性のカプセルに封入して形成された、
    電気部品用樹脂。
  2. 　前記相変化物質は、吸熱して相変化することで絶縁耐圧が上昇する、
    請求項１記載の電気部品用樹脂。
  3. 　前記フィラーにおける前記相変化物質と前記カプセルとの隙間は、前記相変化物質が吸熱して相変化することで小さくなる、
    請求項１または請求項２記載の電気部品用樹脂。
  4. 　前記相変化物質の誘電率は、前記樹脂の誘電率よりも小さい、
    請求項１～３の何れかに記載の電気部品用樹脂。
  5. 　前記相変化物質は、使用対象である電気部品の耐熱温度未満の温度にて相変化する物質である、
    請求項１～４の何れかに記載の電気部品用樹脂。
  6. 　前記カプセルはシリカであり、前記相変化物質は糖アルコールである、
    請求項１～５の何れかに記載の電気部品用樹脂。
  7. 　前記相変化物質は、エリスリトールである、
    請求項１～６の何れかに記載の電気部品用樹脂。
  8. 　前記相変化物質は、ソルビトール、キシリトール、パラフィン、またはポリエチレンのいずれか１つである、
    請求項１～６の何れかに記載の電気部品用樹脂。
  9. 　請求項１～８の何れかに記載の電気部品用樹脂によって、半導体素子を封止した、
    半導体装置。
  10. 　請求項１～８の何れかに記載の電気部品用樹脂により構成されたベース基板に、導体パターンを形成した、
    配線基板。
  11. 　請求項１～８の何れかに記載の電気部品用樹脂の内部に、電気部品又は導体パターンが形成された層を、直接又は中間層を介して積層して電気回路が構築された、
    配線基板。
PCT/JP2012/006652 2011-11-21 2012-10-18 電気部品用樹脂、半導体装置、及び配線基板 WO2013076909A1 (ja)

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CN103339722A (zh) 2013-10-02
JP5591405B2 (ja) 2014-09-17
JPWO2013076909A1 (ja) 2015-04-27
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US20140054077A1 (en) 2014-02-27
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