CN111261527B - 一种半导体封装构件及其制备方法 - Google Patents
一种半导体封装构件及其制备方法 Download PDFInfo
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- CN111261527B CN111261527B CN202010087303.7A CN202010087303A CN111261527B CN 111261527 B CN111261527 B CN 111261527B CN 202010087303 A CN202010087303 A CN 202010087303A CN 111261527 B CN111261527 B CN 111261527B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 95
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000010410 layer Substances 0.000 claims abstract description 72
- 239000012790 adhesive layer Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 57
- 239000003292 glue Substances 0.000 claims description 56
- 230000017525 heat dissipation Effects 0.000 claims description 35
- 239000003795 chemical substances by application Substances 0.000 claims description 33
- 239000000945 filler Substances 0.000 claims description 33
- 239000003822 epoxy resin Substances 0.000 claims description 27
- 229920000647 polyepoxide Polymers 0.000 claims description 27
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 6
- 229910021389 graphene Inorganic materials 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 239000008187 granular material Substances 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14336—Coating a portion of the article, e.g. the edge of the article
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14778—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles the article consisting of a material with particular properties, e.g. porous, brittle
- B29C45/14811—Multilayered articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010087303.7A CN111261527B (zh) | 2020-02-11 | 2020-02-11 | 一种半导体封装构件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202010087303.7A CN111261527B (zh) | 2020-02-11 | 2020-02-11 | 一种半导体封装构件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN111261527A CN111261527A (zh) | 2020-06-09 |
CN111261527B true CN111261527B (zh) | 2021-10-01 |
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CN202010087303.7A Active CN111261527B (zh) | 2020-02-11 | 2020-02-11 | 一种半导体封装构件及其制备方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102575085A (zh) * | 2009-10-20 | 2012-07-11 | 住友电木株式会社 | 半导体封装用环氧树脂组合物、半导体装置及脱模剂 |
CN104342047A (zh) * | 2013-07-26 | 2015-02-11 | 日东电工株式会社 | 带有切割胶带的芯片接合薄膜以及半导体装置的制造方法 |
CN105165129A (zh) * | 2013-06-18 | 2015-12-16 | 株式会社村田制作所 | 树脂多层基板的制造方法 |
CN110277353A (zh) * | 2018-03-13 | 2019-09-24 | 英飞凌科技股份有限公司 | 用于芯片封装的交联热塑性电介质 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005158770A (ja) * | 2003-11-20 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 積層基板とその製造方法及び前記積層基板を用いたモジュールの製造方法とその製造装置 |
WO2013042749A1 (ja) * | 2011-09-22 | 2013-03-28 | 日立化成株式会社 | 積層体、積層板、多層積層板、プリント配線板及び積層板の製造方法 |
JP5346363B2 (ja) * | 2011-10-28 | 2013-11-20 | 積水化学工業株式会社 | 積層体 |
US9265144B2 (en) * | 2011-11-21 | 2016-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Electrical component resin, semiconductor device, and substrate |
CN108237705A (zh) * | 2016-12-26 | 2018-07-03 | 明安国际企业股份有限公司 | 复合材料外壳的制造方法 |
CN108933100B (zh) * | 2017-05-24 | 2021-04-30 | 中芯国际集成电路制造(上海)有限公司 | 互连结构及互连结构的制造方法 |
-
2020
- 2020-02-11 CN CN202010087303.7A patent/CN111261527B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102575085A (zh) * | 2009-10-20 | 2012-07-11 | 住友电木株式会社 | 半导体封装用环氧树脂组合物、半导体装置及脱模剂 |
CN105165129A (zh) * | 2013-06-18 | 2015-12-16 | 株式会社村田制作所 | 树脂多层基板的制造方法 |
CN104342047A (zh) * | 2013-07-26 | 2015-02-11 | 日东电工株式会社 | 带有切割胶带的芯片接合薄膜以及半导体装置的制造方法 |
CN110277353A (zh) * | 2018-03-13 | 2019-09-24 | 英飞凌科技股份有限公司 | 用于芯片封装的交联热塑性电介质 |
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PB01 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210910 Address after: A1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong 518000 Applicant after: Shenzhen faben Electronics Co.,Ltd. Address before: 230000 group 1, Jiming village, Baishan Town, Lujiang County, Hefei City, Anhui Province Applicant before: Zhang Zheng |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518061 a1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen faben Electronics Co.,Ltd. Address before: A1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: Shenzhen faben Electronics Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221215 Address after: C1321, Innovation Plaza, No. 2007, Pingshan Avenue, Liulian Community, Pingshan Street, Pingshan District, Shenzhen, Guangdong 518117 Patentee after: Shenzhen zhinuo Microelectronics Co.,Ltd. Address before: 518061 a1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong Patentee before: Shenzhen faben Electronics Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A semiconductor packaging component and its preparation method Granted publication date: 20211001 Pledgee: Shenzhen hi tech investment small loan Co.,Ltd. Pledgor: Shenzhen zhinuo Microelectronics Co.,Ltd. Registration number: Y2024980034676 |