CN103339722A - 电气零件用树脂、半导体装置及配线基板 - Google Patents

电气零件用树脂、半导体装置及配线基板 Download PDF

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CN103339722A
CN103339722A CN2012800069932A CN201280006993A CN103339722A CN 103339722 A CN103339722 A CN 103339722A CN 2012800069932 A CN2012800069932 A CN 2012800069932A CN 201280006993 A CN201280006993 A CN 201280006993A CN 103339722 A CN103339722 A CN 103339722A
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resin
electric parts
phase change
change material
semiconductor device
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CN103339722B (zh
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南尾匡纪
池内宏树
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Panasonic Intellectual Property Management Co Ltd
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Matsushita Electric Industrial Co Ltd
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Abstract

在利用第一树脂（6）密封半导体元件（T1）来作为树脂封装的结构体的半导体装置中，在第一树脂（6）中混入有将相变物质封入电绝缘性的密封体的填料（7），该相变物质因吸收周围的热量发生相变而使介电强度提高，通过填料（7）的作用来实现散热性能良好、且高耐压的结构体。

Description

电气零件用树脂、半导体装置及配线基板
技术领域
本发明涉及电气零件用树脂、用树脂密封半导体元件的半导体装置及配线基板。
背景技术
例如逆变器控制设备在追求小型化及轻量化。同样地，安装于逆变器控制设备内部的树脂密封型半导体装置形成以小型化及轻量化为目的的结构。另外，在内置有电源半导体元件的树脂密封型半导体装置或安装有半导体装置等电气零件的配线基板中，要求提高相邻的电极间的高耐压化或散热性能等。
在树脂密封型半导体装置中，从芯片朝封装件上表面的散热性能被用于密封的树脂的热传导系数所限制。因此，在专利文献1中，如图11所示，将覆盖芯片31这样的金属制的壳体33安装于基板32，并在壳体33的内部填充制冷剂34。在专利文献1的树脂密封型半导体装置中，从芯片31产生的热量因制冷剂34的热对流而传递至壳体33，因此，与现有的树脂密封型半导体装置相比，能提高朝外部的热传导性。
另外，专利文献2的脉冲驱动电力半导体用的冷却系统以微密封体的形式将相变物质设于密封材料，以吸收热量。图12是专利文献2所公开的半导体装置1001的示意剖视图。半导体装置1001包括散热板1003、基板1005及元件1007。安装于基板1005的元件1007被密封材料1013密封。在密封材料1013中以微密封体的形式含有相变物质1103。作为密封材料1013的一例，公开了环氧树脂。另外，在元件1007与密封材料1013之间填充有热传导材料1009。元件1007和密封材料1013被热传导材料1009热结合。
现有技术文献
专利文献
专利文献1：日本专利特开2008-4688号公报
专利文献2：美国专利第6848500号说明书
发明内容
发明所要解决的技术问题
然而，在专利文献1的树脂密封型半导体装置中，制冷剂34朝壳体33填充的填充工序有时会变得繁琐。另外，作为制冷剂34，使用介电常数较高的氟类惰性液体或乙醇，因此，对于散热性能及介电强度存在极限。
另外，专利文献2的半导体装置是没有考虑介电强度的结构，因此，难以实现高耐压。
本发明的目的在于提供散热性能良好、并能实现高耐压的电气零件用树脂、半导体装置及配线基板。
解决技术问题所采用的技术方案
为了解决上述技术问题，本发明的电气零件用树脂的特征是，上述电气零件用树脂是通过将填料混入电绝缘性的树脂中而构成的，上述填料是通过将相变物质封入电绝缘性的密封体中而形成的，该相变物质因吸热发生相变而使介电强度变化。
另外，为了解决上述技术问题，本发明的半导体装置的特征是，利用上述电气零件用树脂密封半导体元件。
另外，为了解决上述技术问题，本发明的配线基板的特征是，在由上述电气零件用树脂构成的基底基板上形成有导体图案。
另外，为了解决上述技术问题，本发明的另一配线基板的特征是，在上述电气零件用树脂的内部，直接或隔着中间层将形成有电气零件或导体图案的层层叠，以构成电路。
发明效果
根据本发明，能提供散热性能良好、并能实现高耐压的电气零件用树脂、半导体装置及配线基板。
附图说明
图1是本发明实施方式一的半导体装置的放大剖视图。
图2是本发明实施方式一的填料的放大剖视图。
图3是伴随着本发明实施方式一的半导体元件的发热进行的吸热和散热的温度特性图。
图4是本发明实施方式二的配线基板的实施例1的放大剖视图。
图5是实施例2的配线基板的放大剖视图。
图6是实施例3的配线基板的放大剖视图。
图7是实施例4的配线基板的放大剖视图。
图8是实施例5的配线基板的放大剖视图。
图9是现有例的半导体装置的放大剖视图。
图10是伴随着现有例的半导体元件的发热进行的吸热和散热的温度特性图。
图11是专利文献1的半导体装置的放大剖视图。
图12是专利文献2的半导体装置的放大剖视图。
具体实施方式
（实施方式一）
图1表示本实施方式一的第一半导体装置。图1的第一半导体装置是树脂密封型半导体装置，其是将电绝缘性的电气零件用树脂用作密封树脂的结构体的一例。
在该第一半导体装置中，电源元件T1固定于第一引线框1，控制元件T2固定于第二引线框2。第一引线框1、第二引线框2隔着绝缘片材5a、5b固定于散热板3的上表面。电源元件T1、控制元件T2是半导体元件的一例。绝缘片材5a、5b例如由热传导性的电绝缘材料构成，具有用多层的粘接层夹着电绝缘层的三层结构。外装体4的目的在于使第一引线框1及第二引线框2一体化和保护电源元件T1及控制元件T2。外装体4由例如环氧树脂等热固化型树脂的一例即第一树脂6构成。在第一树脂6中混入有本发明的特征即填料7。本实施方式一的第一树脂6中的填料7的填充率根据后述吸热或绝缘的特性、第一树脂6的材料特性等处于20％以上且80％以下。
在本发明中，作为用于密封的树脂（例如第一树脂6），较为理想的是使用能成形并且介电常数比填料7高的树脂。通过使用这样的树脂及填料7，能在半导体装置中实现可以应对瞬间的电压上升的介电强度的特性。
如图2（a）所示，该填料7是通过将相变物质8封入电绝缘性的密封体9中而构成的，该相变物质8吸收周围的热量而发生相变。图2（a）表示常温状态下的填料7的放大剖视图。在图2（a）所示的常温状态下，相变物质8的状态为固体。图2（b）表示吸收了从电源元件T1等产生的热量的状态下的填料7。在图2（b）所示的吸收了热量的状态下，相变物质8的状态为液体。
具体而言，填料7是通过在二氧化硅（SiO2）制的密封体9中注入作为相变物质8的赤藻糖醇（erythritol）而构成的。在本实施方式一中，作为密封体9，使用了粒径60μｍ的物质。另外，在本发明中，作为密封体9，能使用粒径2μｍ以上且100μｍ以下的物质。在本发明中，密封体9的壳厚度为0.1μｍ以上且20μｍ以下。在本实施方式一中，作为密封体9内的相变物质8，使用了体积为密封体9容积的60％的赤藻糖醇。另外，作为相变物质8的赤藻糖醇的体积相对于密封体9的容积处于30％以上且70％以下是较为理想的。密封体9与相变物质8之间为气体层10。作为气体层10，能使用各种惰性气体或空气。在本实施方式一中，作为具有较高绝缘性的物质，在气体层10中使用了空气。
赤藻糖醇在常温状态下如图2（a）所示为固体，但在融点118℃下，相变为液体状态而膨胀。另外，作为相变物质8的一例的赤藻糖醇的融点即118℃比电源元件T1的耐热温度125℃低。即，在本实施方式一中，使用融点比电源元件T1的耐热温度低的相变物质8。在本发明中，由于如上所述使相变物质8的融点比电源元件T1的耐热温度低，因此，能用该相变物质8进行吸热，来降低第一半导体装置的温度上升至电源元件T1的耐热温度以上的可能性。另外，密封体9具有即便该相变物质8融化膨胀也不破裂的强度，从而能避免相变物质8流出至外部。
使用图3、图9及图10，对本发明的第一半导体装置与现有例相比降低了温度上升的可能性的情况进行说明。
图3是伴随着本发明实施方式一的半导体元件的发热进行的吸热和散热的温度特性图。图9是现有例的半导体装置的放大剖视图，图10是伴随着现有例的半导体元件的发热进行的吸热和散热的温度特性图。
本实施方式一的第一半导体装置使用了混入有填料7的第一树脂6。因此，在本实施方式一的第一半导体装置中，当电源元件T1发热而使第一树脂6的温度上升时，如图3中的实线所示，在温度上升并升至赤藻糖醇的融点118℃时，温度上升停止。这是由于以下原因：相变物质8（赤藻糖醇）融化而从固体相变为液体，伴随着该相变，融化热被相变物质8吸收，使得温度上升的斜率在赤藻糖醇的融点附近急剧变小。因此，本实施方式一的第一半导体装置示出了图3的特性，并能使到达超过电源元件T1的耐热温度的温度极值的时间延迟。
即，本发明的第一半导体装置通过将封入有相变物质的微密封体混入期望的树脂，从而能具有良好的散热特性，并能提高介电强度。具体而言，良好的散热特性是指能发现第一半导体装置的急剧温度上升时的吸热作用。另外，介电强度的提高是指对于第一半导体装置瞬间驱动时成为技术问题的电压上升，可防止空间电场集中并使介电常数降低。
另外，在图3的实线中，“区间H”是伴随着电力损失的发热区间，“区间R”是因发热而导致的温度上升停止并使温度降低的散热区间。另外，区间H的一部分即“区间H1”是伴随着相变物质8的相变而被吸热、使得温度上升停止的区间。另外，区间H的一部分即“区间H2”是无法利用相变物质8吸热而导致第一半导体装置的温度上升的区间。上述“区间H1”和“区间H2”的关系取决于填料7内的相变物质8的量。相变物质8的量越多，则“区间H1”越长。
另外，图3的假想线（双点划线）表示图10所示的现有例的情况下的温度上升变化。即，图3的假想线示出了在使用未混入有填料7的第一树脂的情况下的比较例的温度上升变化。
这样，通过使用本实施方式一的第一树脂6，能防止外装体4达到温度极值的情况的发生，从而能提高伴随着半导体装置的温度上升的可靠性。在例如驱动电动机的逆变器的驱动用半导体装置的情况下，本实施方式一的第一树脂6能缓和系统反电动势的温度影响，即便是与以往相同外形尺寸的逆变器，也能提高电动机的运转性能。
此外，本发明的混入有填料7的第一树脂6在发热时的介电强度也是优异的。关于该介电强度，以图9所示的现有的半导体装置为比较例进行比较。另外，图9所示的现有的半导体装置的外装体24的热固化型树脂26全部为环氧树脂。
此处，环氧树脂的介电常数为“4”，与此相对，填料7的密封体9（二氧化硅）的介电常数为“2.5”，相变物质8（赤藻糖醇）的介电常数为“1.5”。因此，在本实施方式一的半导体装置中，填料7的介电常数比环氧树脂的介电常数低，能实现半导体装置中的电极间的介电强度提高。另外，当与在专利文献1的半导体装置中使用乙醇作为制冷剂34的情况进行比较时，乙醇的介电常数为“24”，因此，本实施方式一的半导体装置能大幅提高电极间的介电强度。
（实施方式二）
图4～图8示出了使用上述实施方式一的电气零件用树脂作为绝缘性树脂的结构体的一例即配线基板。关于图4～图8所示的结构体，作为实施例1～实施例5来进行说明。另外，对与实施方式1相同的构件标注相同的符号来进行说明。
－实施例1－
图4所示的实施例1的配线基板11a在基底基板12的上表面形成有导体图案13。在构成基底基板12的电绝缘性的第一树脂6中混入有填料7。填料7与上述实施方式一相同，是通过将吸热发生相变的相变物质8封入绝缘性的密封体9而构成的。半导体装置14将散热板3与导体图案13热结合，以经由导体图案13来进行散热。
这样，由在电绝缘性的第一树脂6中混入有填料7的电气零件用树脂来构成基底基板12，因此，通过相变物质8的融化热的吸收作用将半导体装置14的发热经由基底基板12来进行散热。由此，能使达到超过半导体装置14的耐热温度的温度极值的时间延迟，从而能保护半导体装置14以免因受到热而被破坏。
－实施例2－
图5所示的实施例2的配线基板11b仅就导体图案13埋入在基底基板12中这点与上述实施例1不同。
－实施例3－
图6所示的实施例3的配线基板11c是具有内层电路的多层配线基板。配线基板11c使层18、19隔着中间层20层叠而构成电路。在层18、19的内部形成有主动元件15或从动元件16的电气零件或导体图案17。在实施例3中，在构成各层18、19、中间层20中的至少任一层的第一树脂6中混入有填料7。
这样，由于将填料7混入构成各层18、19、中间层20的电气零件用树脂中，因此，通过填料7内的相变物质8的融化热的吸收作用，不仅能保护电气零件以免因受到热而被破坏，也能期待高频波带的屏蔽效果。该高频波带的屏蔽效果是填料7与第一树脂6相比为低介电常数的效果。
－实施例4－
图7所示的实施例4的配线基板11d仅就层18、19未隔着中间层20层叠这点与上述实施例3不同。
－实施例5－
图8所示的实施例5的配线基板11e仅就在中间层20中形成有阻挡电磁波通过的屏蔽层21这点与上述实施例3不同。
在上述各实施方式、各实施例中，对填料7的密封体9的材质为二氧化硅（SiO2）制进行了说明。然而，作为填料7的密封体9的材质，也能使用电绝缘性的三聚氰胺、硅酮等有机类物质等。
另外，在上述各实施方式中，对填料7的相变物质8为赤藻糖醇的情况进行了说明，但只要是能在低于使用对象的元件即电气零件的耐热温度的温度下发生相变的物质，且介电常数比混入的树脂小的物质，则也能使用其它糖醇。作为其它糖醇，例如也能使用山梨糖醇、木糖醇或介电常数为“2”左右且融点为“70℃”左右的石蜡、介电常数为“2.3”左右且融点为“125℃”左右的聚乙烯等相变物质，以作为填料7的相变物质8。另外，在任何情况下，都能通过调节添加物及其量来调节吸热特性和散热特性。
另外，在上述各实施方式的配线基板、多层配线基板中，对在基板的全部区域中混入有填料7的情况进行了说明。然而，对于将混入有填料7的电绝缘性的第一树脂使用为浸渍在玻璃纤维、碳纤维等基材中的基质树脂的预浸料坯也能同样地加以实施。
上述各实施方式的相变物质8的融化热利用了从固体相转移至液体时所需的潜热。然而，在具有固体与液体的中间相状态的相变物质8的情况下，也能构成为仅利用从固体朝上述中间相状态相转移时所需的潜热，或仅利用从上述中间相状态朝液体相转移时所需的潜热。
在上述各实施方式的填料7中，相变物质8与密封体9之间为气体层10。然而，相变物质8与密封体9之间也可以是液体层或凝胶层。在该情况下，关于相变物质8与密封体9之间的层所要求的特性，其介电常数要处于作为树脂一例的第一树脂6的介电常数以下。
工业上的可利用性
本发明除了有助于使需要大电力控制的空调装置等各种逆变器装置的小型化之外，还有助于提高在恶劣的使用环境下的电结构体的可靠性。
(符号说明)
T1    电源元件
T2    控制元件
1、2  第一、第二引线框
3  散热板
4  外装体
5a、5b  绝缘片材
6  第一树脂
7  填料
8  相变物质
9  密封体
10  气体层
11a、11b、11c、11d、11e  配线基板
12  基底基板
13、17  导体图案
14  半导体装置
15  主动元件
16  从动元件
18、19  层
20  中间层
21  屏蔽层

Claims (11)

1.一种电气零件用树脂，其特征在于，
所述电气零件用树脂是通过将填料混入电绝缘性的树脂中而构成的，
所述填料是通过将相变物质封入电绝缘性的密封体中而形成的，该相变物质因吸热发生相变而使介电强度变化。
2.如权利要求1所述的电气零件用树脂，其特征在于，
所述相变物质因吸热发生相变而使介电强度提高。
3.如权利要求1或2所述的电气零件用树脂，其特征在于，
所述填料中的所述相变物质与所述密封体之间的间隙因所述相变物质吸热发生相变而变小。
4.如权利要求1至3中任一项所述的电气零件用树脂，其特征在于，
所述相变物质的介电常数比所述树脂的介电常数小。
5.如权利要求1至4中任一项所述的电气零件用树脂，其特征在于，
所述相变物质是能在低于使用对象即电气零件的耐热温度的温度下发生相变的物质。
6.如权利要求1至5中任一项所述的电气零件用树脂，其特征在于，
所述密封体是二氧化硅，所述相变物质是糖醇。
7.如权利要求1至6中任一项所述的电气零件用树脂，其特征在于，
所述相变物质是赤藻糖醇。
8.如权利要求1至6中任一项所述的电气零件用树脂，其特征在于，
所述相变物质是山梨糖醇、木糖醇、石蜡及聚乙烯中的任一种。
9.一种半导体装置，其特征在于，
该半导体装置利用权利要求1至8中任一项所述的电气零件用树脂来密封半导体元件。
10.一种配线基板，其特征在于，
在由权利要求1至8中任一项所述的电气零件用树脂构成的基底基板上形成有导体图案。
11.一种配线基板，其特征在于，
在权利要求1至8中任一项所述的电气零件用树脂的内部，直接或隔着中间层使形成有电气零件或导体图案的层进行层叠，以构成电路。
CN201280006993.2A 2011-11-21 2012-10-18 电气零件用树脂、半导体装置及配线基板 Expired - Fee Related CN103339722B (zh)

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