WO2012165549A1 - Appareil de mesure de dimension - Google Patents
Appareil de mesure de dimension Download PDFInfo
- Publication number
- WO2012165549A1 WO2012165549A1 PCT/JP2012/064078 JP2012064078W WO2012165549A1 WO 2012165549 A1 WO2012165549 A1 WO 2012165549A1 JP 2012064078 W JP2012064078 W JP 2012064078W WO 2012165549 A1 WO2012165549 A1 WO 2012165549A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- microscope
- concavo
- image
- dimension measuring
- light
- Prior art date
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
- G02B21/08—Condensers
- G02B21/082—Condensers for incident illumination only
- G02B21/084—Condensers for incident illumination only having annular illumination around the objective
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Definitions
- the present invention relates to a dimension measuring apparatus that measures the dimension between the edges of a concavo-convex pattern, and particularly relates to a dimension measuring apparatus that attempts to distinguish and measure the upper and lower dimensions of the concavo-convex pattern.
- a conventional dimension measuring apparatus includes an illuminating unit that illuminates an object to be measured, an imaging optical system that connects an image of the object to be measured, an imaging unit that captures the image and converts it into image data, and a measurement process using the image data.
- an enlargement image forming means for forming an image on the element By using an image forming optical system having a long focal length as the image forming means, a distance is provided between the object to be measured and the image pickup optical system. (See, for example, Patent Document 1).
- the said illumination means used here was transmission illumination or coaxial epi-illumination.
- the concavo-convex pattern when the illumination means is transmissive illumination, the concavo-convex pattern can be clearly detected when the difference in transmittance between the concavo-convex pattern and its periphery is large, but the concavo-convex pattern The slope at the edge could not be detected, and the upper and lower dimensions of the concavo-convex pattern could not be clearly distinguished and measured.
- the illumination means is transmissive illumination
- the difference in transmittance between the concavo-convex pattern and its periphery is small, the concavo-convex pattern itself cannot be detected clearly, and in this case also, the upper and lower dimensions of the concavo-convex pattern It was not possible to measure clearly.
- the uneven pattern can be detected clearly when the difference in reflectance between the uneven pattern and its surroundings is large, but the slope at the edge of the uneven pattern is clearly detected. Therefore, the upper and lower dimensions of the concavo-convex pattern could not be clearly distinguished and measured.
- an object of the present invention is to provide a dimension measuring apparatus that addresses such problems and attempts to clearly distinguish and measure the upper and lower dimensions of the concavo-convex pattern.
- a dimension measuring apparatus includes a microscope that magnifies and observes a concavo-convex pattern formed on a substrate, an imaging camera that images the concavo-convex pattern observed through the microscope, and the microscope.
- the illumination optical system that irradiates scattered light from outside the field of the objective lens into the field of view and the image of the imaging camera are input and displayed on the screen of the display unit, and input by the input means and specified on the display screen
- the uneven pattern formed by irradiating scattered light from outside the field of the objective lens of the microscope for observing the uneven pattern formed on the substrate with the illumination optical system and observing through the microscope with the imaging camera.
- the image of the imaging camera is input by the control means and displayed on the screen of the display unit, and one of the upper and lower portions of the uneven pattern within the range specified by the input means and input on the display screen , Or measure both dimensions.
- control means performs a reciprocal search within a range specified by the input means, and an interval between portions changed from dark to light or a portion changed from light to dark in the luminance change obtained by the reciprocal search. It is desirable to measure either one or both of the upper and lower portions of the concavo-convex pattern from the interval.
- the range specified by the input means is a quadrangle
- the reciprocating search is performed in a direction parallel to one side of the quadrangle and the reciprocating search is performed a plurality of times at equal intervals in the direction intersecting the side. desirable.
- the concavo-convex pattern may be a thin film pattern having a transmittance or reflectance equivalent to the transmittance or reflectance of the substrate.
- the light reflected by the upper surface and the substrate surface of the concave / convex pattern orthogonal to the optical axis of the microscope is not taken into the objective lens of the microscope, but is reflected by the slope of the edge of the concave / convex pattern. Only is taken into the objective and observed. Therefore, the captured image of the concavo-convex pattern is a line drawing drawn with bright lines on a black background, and by measuring the dimension between the inner edge and the outer edge of the bright line of the line drawing, the upper and lower parts of the concavo-convex pattern are measured. The dimensions can be clearly distinguished and measured. Thereby, an uneven
- substrate can also be performed accurately.
- FIG. 1 is a front view showing an embodiment of a dimension measuring apparatus according to the present invention.
- This dimension measuring device measures a dimension between edges of a concavo-convex pattern, and includes a microscope 1, an imaging camera 2, a measurement illumination optical system 3, and a control unit 4.
- the microscope 1 magnifies and observes the concave-convex pattern formed on the substrate 5.
- the objective lens 7 provided facing the substrate 5 placed on the XY stage 6, and the objective lens 7 captures the microscope 1.
- An imaging optical system is configured by including an imaging lens 8 that forms an image of the concavo-convex pattern on the substrate 5 on a light receiving portion of the imaging camera 2 described later.
- An imaging camera 2 is provided on the opposite side of the optical path of the microscope 1 from the substrate 5.
- the imaging camera 2 captures the uneven pattern observed through the microscope 1 and is, for example, a two-dimensional CCD camera.
- the measurement illumination optical system 3 is provided so that the uneven pattern on the substrate 5 can be illuminated.
- the measurement illumination optical system 3 irradiates scattered light from the outside of the field of the objective lens 7 of the microscope 1 into the field of view, and the light source 9 and the conical shape from upstream to downstream of the light traveling direction.
- the mirror 10, the ring-shaped mirror 11, the perforated plane mirror 12, and the ring-shaped light guide member 13 are provided in this order.
- the light source 9 generates white scattered light.
- the conical mirror 10 has a conical outer surface as a total reflection mirror, and reflects light from the light source 9 radially in the orthogonal direction, and the central axis passing through the apex of the cone is used as measurement illumination optics. It is provided so as to coincide with the optical axis of the system 3.
- the ring-shaped mirror 11 forms the inner peripheral surface of the ring-shaped member as a conical total reflection mirror, and matches the central axis of the ring with the optical axis so that the inner peripheral surface is the conical mirror.
- the perforated plane mirror 12 is provided with the center of the hole 12 a inclined by 45 degrees so as to match the optical axis of the measurement illumination optical system 3 and the optical axis of the microscope 1, and is reflected by the ring-shaped mirror 11.
- the ring-shaped illumination light is reflected to the substrate 5 side.
- the diameter of the hole 12a is made larger than the optical path diameter in the imaging optical system of the microscope 1.
- the ring-shaped light guide member 13 guides the ring-shaped illumination light reflected by the perforated plane mirror 12 to the tip of the objective lens 7 of the microscope 1 and irradiates the visual field of the objective lens 7 from outside the visual field.
- the vicinity of the tip portion on the substrate 5 side is formed in the concave mirror 13 a, and the ring-shaped illumination light and the outer peripheral surface of the objective lens 7 are ring-shaped.
- a gap 14 between the inner peripheral surface of the member is guided toward the substrate 5 side, and is condensed in the vicinity of the focal point of the objective lens 7 by the concave mirror 13a.
- Control means 4 is provided in electrical connection with the imaging camera 2. This control means 4 inputs the image of the imaging camera 2 and displays it on the screen of the display unit. Either one of the upper part and the lower part of the concavo-convex pattern within the range specified by the input means and input on the display screen. , Or both dimensions, for example a personal computer (PC).
- a control unit 15, an input unit 16, and a display unit 17 are provided.
- step S ⁇ b> 1 the XY stage 6 is moved to position the microscope 1 at a measurement position on the substrate 5.
- step S2 the measurement position of the substrate 5 is illuminated by, for example, coaxial epi-illumination (not shown), and auto-focusing is performed by changing the height of the microscope 1 so that the image of the observed pattern becomes clear. To do.
- step S3 the illumination is switched to illumination by the measurement illumination optical system 3, and the scattered light is irradiated from the outside of the field of the objective lens 7 of the microscope 1 into the field of view. Illuminate the uneven pattern.
- step S4 an image of the concave / convex pattern at the measurement position is captured by the objective lens 7 of the microscope 1 and imaged on the light receiving portion of the imaging camera 2 by the imaging lens 8. Thereby, the uneven pattern on the substrate 5 is enlarged and imaged by the imaging camera 2. An image of the uneven pattern acquired by the imaging camera 2 is displayed on the screen 17 a of the display unit 17 of the control unit 4.
- Reflected light indicated by a broken line in the drawing reflected by a surface orthogonal to the optical axis of the lens 7 (for example, the upper surface 18a of the concavo-convex pattern 18) is not taken into the objective lens 7 of the microscope 1 and is inclined at the edge of the concavo-convex pattern 18.
- the reflected light indicated by the solid line in FIG. 6 reflected by the portion 18 b is taken into the objective lens 7.
- the image captured by the imaging camera 2 and displayed on the display unit 17 of the control means 4 is a line drawing as shown in FIG.
- the black and white are shown inverted for the sake of clarity. That is, in the actual display, the black line portion is the “bright portion” and the white portion is the “dark portion”.
- step S5 for example, the mouse 19 which is one of the input means 16 is used to specify the measurement range AR. Specifically, when the mouse 19 is clicked and points a, b, and c are specified in order on the screen 17a as shown in FIG. 4, a range of parallelograms having the points a, b, and c as vertices. Is confirmed.
- step S6 in accordance with a program stored in the control unit 15, a reciprocating search is performed in a direction parallel to the side ab (for example, along the search line 20 shown in the figure) of the determined parallelogram measurement range AR.
- the dimension of one or both of the upper part and the lower part of the concavo-convex pattern 18 is measured from the interval between the changed portions from dark to bright or the interval between the changed portions from bright to dark in the detected luminance change.
- the brightness change is examined by searching in the direction of arrow A parallel to the side ab.
- a graph as shown in FIG. 5A is obtained.
- the point P1 first changed from dark to bright in the search in the direction of arrow A is detected, and the position of the point P1 is stored in the memory of the control unit 15.
- the brightness change is examined by searching in the direction of arrow B opposite to arrow A. Then, a point P2 (see FIG. 5A) that first changes from dark to bright in the search in the direction of arrow B is detected, and the position of the point P2 is stored in the memory of the control unit 15.
- the positions of the detected points P1 and P2 are read from the memory and calculated by the control unit 15 to calculate the distance L between P1 and P2. And it memorize
- the calculated distance L corresponds to the size of the lower part of the uneven pattern 18 shown in FIG.
- step S7 the control unit 15 determines whether or not all dimension measurements in the designated parallelogram area have been completed.
- step S7 is “NO” determination, and the process proceeds to step S8.
- step S8 the search position is shifted by a predetermined distance in a direction orthogonal to the side ab, and the process returns to step S6 to perform a reciprocal search at the new search position. Measure. This dimension measurement is repeated until all dimension measurements in the designated parallelogram area are completed and “YES” is determined in step S7. And if it becomes "YES” determination in step S7, it will progress to step S9.
- step S9 all the measurement results stored in the memory are read out and calculated by the control unit 15, and the maximum value, minimum value, and average value of the dimensions of the uneven pattern 18 within the specified measurement range AR are obtained and displayed. Displayed on the unit 17. Alternatively, it may be printed out by a printer (not shown).
- the dimension measurement of the upper portion of the uneven pattern 18 may be performed as described above by detecting a point where the brightness changes from “bright” to “dark”.
- the program is set to measure in the direction of the side bc after measuring in the direction parallel to the side ab within the specified parallelogram measurement range AR, the size of the rectangular uneven pattern 18 is measured. be able to.
- the upper and lower dimensions of the uneven pattern 18 can be clearly distinguished and measured, and in particular, the transmittance or reflectance equivalent to the transmittance or reflectance of the substrate 5 can be obtained.
- the dimension of the thin film pattern can also be measured with high accuracy.
- the imaging camera 2 may have a variable shutter speed.
- the amount of received light can be increased by slowing the shutter speed.
- the amount of received light can be reduced by increasing the shutter speed. Therefore, in any case, the concave / convex pattern 18 can be detected with appropriate luminance, and the dimension measurement can be performed with high accuracy.
- the present invention is not limited to this, and the measurement range AR may be specified by a straight line. Thereby, the dimension measurement of the range designated with the straight line can be performed.
- the measurement illumination optical system 3 is configured to guide the light emitted from the light source 9 from outside the field of the objective lens 7 into the field of view through a plurality of reflecting mirrors.
- the present invention is not limited to this, and light may be directly supplied into the field of view of the objective lens 7 by, for example, an LED or an optical fiber provided on the outer peripheral portion of the objective lens 7.
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Abstract
La présente invention comprend : un microscope (1) destiné à agrandir et à observer un motif en retrait et projeté formé sur un substrat (5) ; une caméra de capture d'image (2), qui capte une image du motif en retrait et projeté qui est observé à travers le microscope (1) ; un dispositif optique d'éclairage (3), qui applique une lumière diffusée à partir de l'extérieur du champ de vision d'un objectif (7) du microscope (1) vers l'intérieur du champ de vision ; et un moyen de commande (4), qui a entrée dans celui-ci l'image captée au moyen de la caméra de capture d'image (2), affiche l'image sur un écran (17a) d'une unité d'affichage (17), et mesure les dimensions de la partie supérieure et/ou de la partie inférieure du motif en retrait et projeté dans une plage, qui est entrée et spécifiée dans l'écran d'affichage (17a) au moyen d'un moyen d'entrée (16). En conséquence, les dimensions de la partie supérieure et de la partie inférieure du motif en retrait et projeté sont mesurées en discriminant clairement les dimensions de la partie supérieure et celles de la partie inférieure les unes des autres.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020137027327A KR102019978B1 (ko) | 2011-06-02 | 2012-05-31 | 치수 측정 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2011124132A JP6086274B2 (ja) | 2011-06-02 | 2011-06-02 | 寸法測定装置 |
JP2011-124132 | 2011-06-02 |
Publications (1)
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WO2012165549A1 true WO2012165549A1 (fr) | 2012-12-06 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2012/064078 WO2012165549A1 (fr) | 2011-06-02 | 2012-05-31 | Appareil de mesure de dimension |
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JP (1) | JP6086274B2 (fr) |
KR (1) | KR102019978B1 (fr) |
WO (1) | WO2012165549A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022043460A1 (fr) * | 2020-08-28 | 2022-03-03 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Systeme optique de focalisation et de collection |
Families Citing this family (1)
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KR20210097623A (ko) | 2020-01-30 | 2021-08-09 | 한국전자통신연구원 | 치수 오류 판별 방법 및 장치 |
Citations (5)
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JPH10274707A (ja) * | 1997-03-31 | 1998-10-13 | Sankyo Seiki Mfg Co Ltd | 回折格子 |
JP2000283909A (ja) * | 1999-03-30 | 2000-10-13 | Jeol Ltd | 表面観察装置 |
JP2002014053A (ja) * | 2000-06-28 | 2002-01-18 | Sony Corp | 検査装置及び検査方法 |
JP2005134666A (ja) * | 2003-10-30 | 2005-05-26 | Hoya Corp | フォトマスク及び映像デバイスの製造方法 |
JP2008096125A (ja) * | 2006-10-05 | 2008-04-24 | Keyence Corp | 光学式変位計、光学式変位測定方法、光学式変位測定プログラム及びコンピュータで読み取り可能な記録媒体並びに記録した機器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61102505A (ja) * | 1984-10-26 | 1986-05-21 | Hitachi Ltd | 照明装置 |
JP2000241123A (ja) | 1999-02-23 | 2000-09-08 | Toppan Printing Co Ltd | 微小寸法測定装置 |
JP2004150942A (ja) * | 2002-10-30 | 2004-05-27 | Sysmex Corp | 粒子検出用セルとそれを用いた粒子検出装置 |
JP4585822B2 (ja) * | 2004-09-22 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | 寸法計測方法及びその装置 |
KR20080075257A (ko) * | 2007-02-12 | 2008-08-18 | 한국표준과학연구원 | 평판 디스플레이의 패턴 검사 장치 및 방법 |
WO2010073360A1 (fr) * | 2008-12-26 | 2010-07-01 | 株式会社アドバンテスト | Appareil de mesure d'un motif et procédé de mesure d'un motif |
-
2011
- 2011-06-02 JP JP2011124132A patent/JP6086274B2/ja active Active
-
2012
- 2012-05-31 KR KR1020137027327A patent/KR102019978B1/ko active IP Right Grant
- 2012-05-31 WO PCT/JP2012/064078 patent/WO2012165549A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10274707A (ja) * | 1997-03-31 | 1998-10-13 | Sankyo Seiki Mfg Co Ltd | 回折格子 |
JP2000283909A (ja) * | 1999-03-30 | 2000-10-13 | Jeol Ltd | 表面観察装置 |
JP2002014053A (ja) * | 2000-06-28 | 2002-01-18 | Sony Corp | 検査装置及び検査方法 |
JP2005134666A (ja) * | 2003-10-30 | 2005-05-26 | Hoya Corp | フォトマスク及び映像デバイスの製造方法 |
JP2008096125A (ja) * | 2006-10-05 | 2008-04-24 | Keyence Corp | 光学式変位計、光学式変位測定方法、光学式変位測定プログラム及びコンピュータで読み取り可能な記録媒体並びに記録した機器 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022043460A1 (fr) * | 2020-08-28 | 2022-03-03 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Systeme optique de focalisation et de collection |
FR3113741A1 (fr) * | 2020-08-28 | 2022-03-04 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | systeme optique de focalisation et de collection |
Also Published As
Publication number | Publication date |
---|---|
KR102019978B1 (ko) | 2019-09-09 |
KR20140026416A (ko) | 2014-03-05 |
JP2012251853A (ja) | 2012-12-20 |
JP6086274B2 (ja) | 2017-03-01 |
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