Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Definitions

• the invention relates to methods for producing fracture in substrates, such as semiconductor substrates.
• a first step an ion implantation of one (or more) gaseous species (for example hydrogen, helium, etc.) is carried out in a donor substrate 2, through a surface 2 'of it.
• An implantation zone 6 is thus formed, whose ion concentration is sufficient to create a layer of microcavities (FIG. 1B).
• the implantation is generally implantation of hydrogen or helium at an energy of 10 to 210 keV, and at a dose of some 16 to 10 17 / cm 2 .
• the face 2 'of the donor substrate 2 is then placed in intimate contact with a receiving substrate 8 (FIG. 1C).
• a fracture is then carried out at zone 6 of microcavities, by the application of a heat treatment and / or a detachment stress.
• a heat treatment it is carried out by applying a temperature in a range substantially between 300 ° C and 700 ° C.
• a detachment stress can be inserted a blade between the two substrates 2, 8 and / or apply tensile forces and / or bending and / or shear, and / or ultrasound or microwaves.
• a fracture is obtained, and a layer 4 of material from the donor substrate 2, transferred to the receiving substrate 8, as illustrated in FIG. 1D.
• the remaining portion 2i of the donor substrate 2 can then be recycled and in particular reused to restart the same cycle.
• a He-H co-implant can reduce the fracture temperature and / or the dose necessary to obtain the fracture, as described in the article by C. Lagahe-Blanchard et al., Proceedings on the Semiconductor Wafer Bonding VII: Science, Technology, and Applications, Paris, France, 27 April-2 May 2003 Electrochemical Society, Pennington, NJ, 2003, Vol. PV2003-19, p. 346.
• This He-H co-implant technique is very effective in reducing the total dose required for fracture, or in reducing the temperature of the fracture annealing, or even in reducing the roughness of the layers after fracture.
• this technique is very sensitive to the implantation parameters.
• the distance between the implantation zones or peaks, respectively of hydrogen and helium, or the order in which the implantations are performed, or the He / H dose ratio have a strong influence on the total dose or on the temperature of the fracture annealing or on the characteristics of the film resulting from the fracture, or even on obtaining the fracture itself.
• the boron is heavier than hydrogen or helium. It therefore damages more the material of the substrate in which it is implanted, which can be harmful for the quality of the layers. Moreover, for a given implantation energy, the implantation depth decreases when the mass of the ion increases. It is therefore not possible with a traditional implanter (limited in energy) to implant deep boron (typically beyond 100nm).
• a new method is described, implementing the formation of a zone of high lithium concentration followed by hydrogen implantation.
• This process comprises:
• the formation of the lithium implantation zone may be obtained by first implantation with lithium ions, for example at a dose greater than 1 ⁇ 10 13 / cm 2 (or between 10 13 and 5 ⁇ 10 15 / cm 2 ).
• the implantation energies are preferably chosen so that the peaks of Li and H are located between them at the same depth, or located at a small distance from one another, this distance being less than or substantially equal to 200 nm or 150 nm.
• the difference in implantation depth can be evaluated using simulators conventionally used in the field of implantation for many years.
• One example is the SRIM simulation software, available on the internet. This difference can also be measured by secondary ionization mass spectrometry (known by the acronym SIMS).
• SIMS secondary ionization mass spectrometry
• the dose of lithium is less than 5.10 15 Li / cm 2, which allows one to avoid amorphization of the Si substrate (the maximum concentration of Li is then about 4.10 19 / cm 3, the limit of amorphization being 4.10 21 / cm 3 ).
• the dose of hydrogen is between 4.10 16 and 10 17 / cm 2 .
• the lithium is introduced into the donor substrate by electrolysis or diffusion, for example after deposition or evaporation of lithium on a surface of the substrate.
• the implantation of hydrogen is then preferably carried out in such a way that the hydrogen peak (place of maximum hydrogen concentration) is located at a depth at which the lithium concentration in the Si substrate is of the order of 4.10 / cm or between 5x10 / cm and 1 x 10 20 / cm 3 .
• the hydrogen peak place of maximum hydrogen concentration
• the lithium concentration in the Si substrate is of the order of 4.10 / cm or between 5x10 / cm and 1 x 10 20 / cm 3 .
• An advantage of this variant is that it requires only one implantation, preceded by a low cost step, by electrolysis or diffusion.
• the implantation profile of lithium is substantially constant from the surface to a maximum depth of introduction, it is then sought that the average depth of implantation of hydrogen in the donor substrate is included in this zone.
• the diffusion, after deposition or evaporation on a surface of the substrate, is for example carried out by heat treatment.
• the donor substrate and the stiffener may have thermal expansion coefficients whose difference is, in absolute value, greater than 3.10 ⁇ 6 K _1 .
• a method as just described can significantly reduce the fracture heat treatment and / or the total implantation dose.
• Figures 1A-1D represent steps of a known method.
• FIGS. 3A-3D are views illustrating comparisons of blistering by implantation of hydrogen alone (FIGS. 3A and 3B) or by co-implantation of lithium and hydrogen followed by annealing at 450 ° C. for 10 minutes (FIGS. 3C and 3D).
• FIGS. 4A and 4B are diagrams giving, respectively, the diffused lithium concentration as a function of the depth and the solubility of Li in silicon. DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
• a silicon substrate 20 optionally selected with a surface layer of thermal oxide S10 2 is selected.
• This oxide (not shown specifically in the figures) may have a thickness of a few tens or hundreds of nm, for example 50 nm or 100 nm.
• Lithium implantation is carried out in this substrate, using a lithium ion beam 14, directed through a face 20 'of the substrate. This leads to the formation of a zone 22 implanted lithium ( Figure 2B).
• the reference 22 designates the lithium implantation peak, or zone of maximum concentration located at 960 nm below the implanted surface for an implantation energy of 210keV.
• Hydrogen ion implantation 18 is then carried out (FIG. 2C) through the same face 20 'of the substrate 20 as that through which the lithium implantation has been carried out.
• FIG. 2C Hydrogen ion implantation 18 is then carried out (FIG. 2C) through the same face 20 'of the substrate 20 as that through which the lithium implantation has been carried out.
• the implantation face 20 'of the substrate 20 is then placed in intimate contact with a stiffener 19 (FIG. 2E), for example made of sapphire.
• a stiffener 19 for example made of sapphire.
• a temperature is applied in a range substantially between 150 ° C and 700 ° C, and typically between 200 ° C and 400 ° C.
• a blade can be inserted at the implanted zone 22, 24 of the substrate 20 and / or tensile and / or flexural and / or shear stresses are applied to the substrate 20, and / or ultrasound or microwaves of power and frequency in the range 10 to 100 kHz, for example between 10 and 50 kHz, for example 40 kHz.
• a zone 22 with a high lithium concentration can be produced by a lithium introduction step, by electrolysis or by diffusion.
• the step of FIG. 2A is thus replaced by this electrolysis or diffusion step.
• the implantation profile is then constant from the surface to a few microns (10 microns), even a few tens of microns (100 microns).
• a substrate silicon is used as a cathode, and is immersed, with an anode, in a bath of a lithium salt (for example: LiBr) used as electrolyte.
• the electrolysis is carried out for a period of time for example between 5 minutes and 30 minutes, with a current of between 1 mA and a few tens of mA, for example 30 mA.
• the distribution of lithium as a function of its depth in the substrate can be evaluated for resistance measurement by the 4-point method. These measurements can be calibrated beforehand by SEM observations (scanning electron microscopy).
• FIG. 3A is a snapshot of the surface of the implanted substrate after a hydrogen implantation, alone, at 100 keV with a dose of 4.5 ⁇ 10 6 H / cm 2 ,
• FIG. 3B is a snapshot of the surface of the implanted substrate after a hydrogen implantation, alone, at 110 keV with a dose of 4.5 ⁇ 10 16 H / cm 2 ,
• FIG. 3C is a snapshot of the surface of the implanted substrate after a double implantation, a first implantation of lithium at 210 keV with a dose of 10 15 H / cm 2 followed by a second implantation of hydrogen at 100 keV with a dose of 4.5 ⁇ 10 16 H / cm 2 ,
• FIG. 3D is a snapshot of the surface of the implanted substrate after a double implantation, a first lithium implantation at 210 keV with a dose of 10 15 H / cm 2 followed by a second hydrogen implantation at 110 keV with a dose from 4.5.10 to 16 H / cm 2 .
• these blisters are indicative of the presence of subactivated microcracks, whose gas pressure (H 2 in the case of implantation of hydrogen) causes a surface deformation; they are therefore directly connected to the microcracks formed when an assembly is made with a transfer substrate and then a fracture, as in FIGS. 1C-1D in the case of implantation with hydrogen alone, or in FIGS. 2E-2F in FIGS. the case of lithium - hydrogen coimplantation.
• the images of FIGS. 3A and 3B show that implantation of hydrogen alone does not allow the formation of blisters on the surface of the substrates.
• Co-implantation Li-H is therefore a very effective way to reduce the thermal budget and / or the hydrogen dose required to obtain a fracture.
• Example 1 A silicon substrate (100) is provided with a thermal oxide layer S1O 2 with a thickness of 100 nm.
• a first lithium implantation is performed at an energy of 210keV and with a dose of 10 15 / cm 2 ,
• a second hydrogen implantation is carried out at an energy of 100keV and with a dose of 4.5 ⁇ 10 16 / cm 2 .
• the implanted substrate is then bonded to a sapphire substrate 19 by gluing or direct or molecular assembly (FIG. 2E).
• the Si / sapphire bonding can not be brought to a temperature higher than ⁇ 350 ° C: above this temperature, we witness the systematic detachment of structures.
• the fracture treatment then consists, for example, in annealing at 250 ° C. for 1 hour.
• a P-type Si substrate (111) is subjected to diffusion lithium introduction under the following conditions:
• a layer of Li is first deposited on the surface of the Si by evaporation under vacuum (at 2.1 ° C. at 6 Torr), at room temperature,
• the concentration of Li in the Si substrate is -4.10 19 / cm 3 from the surface to a depth of a few microns below the surface.
• the results relating to silicon are given on curve I, curve II corresponding to germanium.
• the hydrogen implantation is then carried out under the following conditions:
• the implanted substrate is then bonded to an Si plate 19 having a S1O 2 oxide layer with a thickness of 400 nm on the surface.
• a fracture is thermally induced by the application of annealing in the 500 ° C range.
• This variant is particularly advantageous for reducing the overall cost of a transfer process.

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• 2011
  • 2011-05-02 FR FR1153737A patent/FR2974944B1/fr not_active Expired - Fee Related
• 2012
  • 2012-04-27 WO PCT/EP2012/057713 patent/WO2012150184A1/fr not_active Ceased
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