JP6019106B2 - 材料中にクラックを形成するための方法 - Google Patents
材料中にクラックを形成するための方法 Download PDFInfo
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- JP6019106B2 JP6019106B2 JP2014508753A JP2014508753A JP6019106B2 JP 6019106 B2 JP6019106 B2 JP 6019106B2 JP 2014508753 A JP2014508753 A JP 2014508753A JP 2014508753 A JP2014508753 A JP 2014508753A JP 6019106 B2 JP6019106 B2 JP 6019106B2
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- lithium
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- implantation
- hydrogen
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- 238000000034 method Methods 0.000 title claims description 50
- 239000000463 material Substances 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 74
- 229910052744 lithium Inorganic materials 0.000 claims description 51
- 238000002513 implantation Methods 0.000 claims description 49
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 48
- 229910052739 hydrogen Inorganic materials 0.000 claims description 43
- 239000001257 hydrogen Substances 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 36
- 238000002347 injection Methods 0.000 claims description 35
- 239000007924 injection Substances 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 12
- 230000002787 reinforcement Effects 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 10
- 238000005868 electrolysis reaction Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000032798 delamination Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- -1 Hydrogen ions Chemical class 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004299 exfoliation Methods 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910003002 lithium salt Inorganic materials 0.000 description 1
- 159000000002 lithium salts Chemical class 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Description
・シリコン基板中での、濃度が5×1018原子/cm3〜5×1020原子/cm3である高濃度リチウムゾーンの形成、および
・高濃度リチウムゾーン中またはその近傍への水素注入を含む。
・前記ドナー基板中での、濃度が5×1018原子/cm3〜5×1020原子/cm3である高濃度リチウムゾーンの形成、
・次いで、ドナー基板中の、高濃度リチウムゾーン中またはその近傍への水素注入、
・ドナー基板への補強材の張り付け、
・注入によって画定された層の剥離を生じさせるための少なくとも1種のサーマルバジェットの適用を含む。
・リチウムのドーズ量が5×1015Li/cm2未満であり、Si基板の非晶質化を防止するように(その場合、Liの最大濃度はほぼ4×1019/cm3、非晶質化限界は4×1021/cm3である)、
・水素のドーズ量が、4×1016〜1017/cm2であるように、選択される。
・図2Dのような水素−リチウムの二重注入の形成をもたらす図2Cのような水素イオン注入18、
・補強材19との密接な接触(図2E)、および
・最終的に、熱処理および/または剥離歪みを適用することによる微小空孔層での破面形成(図2F)、
が後に続く。
・図3Aは、100keV、4.5×1016H/cm2のドーズ量での水素単独注入後の被注入基板の表面写真であり、
・図3Bは、110keV、4.5×1016H/cm2のドーズ量での水素単独注入後の被注入基板の表面写真であり、
・図3Cは、まず210keV、1015H/cm2のドーズ量でのリチウム注入、それに続き次に100keV、4.5×1016H/cm2のドーズ量での水素注入を含む二重注入後の被注入基板の表面写真であり
・図3Dは、まず210keV、1015H/cm2のドーズ量でのリチウム注入、それに続き次に110keV、4.5×1016H/cm2のドーズ量での水素注入を含む二重注入後の被注入基板の表面写真である。
・まず、210keVのエネルギー、および1015/cm2のドーズ量でリチウム注入を実施し、
・次に、100keVのエネルギー、および4.5×1016/cm2のドーズ量で水素注入を実施する。
・まず、周囲温度、2×10−6Torrでの真空蒸着により、Si基板上にLi層を蒸着し、
・次いで、800℃で10分間の真空アニーリング(1×10−5Torr)により、LiをSi中に拡散させる。
・水素のエネルギー:210keV
・ドーズ量:4×1016H/cm2。
2’ 表面
21 残りの部分
4 層
6 注入ゾーン
6 微小空孔ゾーン
8 受け基板
14 リチウムイオンビーム
18 水素イオンの注入
19 補強材
20 シリコン基板
20’ 表面
201 残りの部分
22 注入ゾーン
24 注入ゾーン
34 薄層
Claims (14)
- 基板(20)またはドナー基板から、半導体材料の層(34)を形成するための方法であって、同一の半導体材料製であり、
・前記ドナー基板中での、濃度が5×1018原子/cm3〜5×1020原子/cm3である高濃度リチウムゾーン(22)の形成であって、前記高濃度リチウムゾーンは水素に対するトラップを形成するものである、高濃度リチウムゾーン(22)の形成、
・次いで、ドナー基板中の、高濃度リチウムゾーン中またはその近傍への水素注入(18、24)、
・注入されたドナー基板と補強材(19)との組み付け、
・ドナー基板(20)中に注入によって画定された層(34)の剥離を生じさせるためのサーマルバジェットの適用を含む方法。 - サーマルバジェット温度が150℃〜700℃であり、前記温度の適用時間が1分〜1か月である、請求項1に記載の方法。
- リチウムが、イオン注入(14)によって導入される、請求項1または2に記載の方法。
- リチウムが、1×1013/cm2を超える、または1013/cm2〜5×1015/cm2のドーズ量で導入される、請求項3に記載の方法。
- リチウムが、電気分解または拡散によって導入される、請求項1または2に記載の方法。
- リチウムが、基板表面上への堆積または蒸着後の拡散によって導入される、請求項5に記載の方法。
- 基板表面での堆積または蒸着後の拡散が、アニーリングによって実施される、請求項6に記載の方法。
- 水素イオンが、1016原子/cm2〜5×1017原子/cm2のドーズ量で注入される(18)、請求項1から7のいずれか一項に記載の方法。
- ドナー基板(20)における水素の平均注入深さ(24)が、リチウムの平均深さ(22)に対して200nm未満の値まで相違する、請求項1から8のいずれか一項に記載の方法。
- 注入されたドナー基板と補強材(19)との組み付けが、分子もしくは直接組み付け、または接合型である、請求項1から9のいずれか一項に記載の方法。
- ドナー基板(20)が、シリコン製である、請求項1から10のいずれか一項に記載の方法。
- シリコン基板が、表面上で酸化されている、請求項11に記載の方法。
- 補強材(19)が、サファイア製である、請求項1から11のいずれか一項に記載の方法。
- ドナー基板および補強材が、その差異が、絶対値で3×10−6/K−1を超える熱膨張係数を有する、請求項1から13のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1153737 | 2011-05-02 | ||
FR1153737A FR2974944B1 (fr) | 2011-05-02 | 2011-05-02 | Procédé de formation d'une fracture dans un matériau |
PCT/EP2012/057713 WO2012150184A1 (fr) | 2011-05-02 | 2012-04-27 | Procede de formation d'une fracture dans un materiau |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014518010A JP2014518010A (ja) | 2014-07-24 |
JP2014518010A5 JP2014518010A5 (ja) | 2016-05-26 |
JP6019106B2 true JP6019106B2 (ja) | 2016-11-02 |
Family
ID=44262789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014508753A Active JP6019106B2 (ja) | 2011-05-02 | 2012-04-27 | 材料中にクラックを形成するための方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9105688B2 (ja) |
EP (1) | EP2705529B1 (ja) |
JP (1) | JP6019106B2 (ja) |
KR (1) | KR101913174B1 (ja) |
CN (1) | CN103534800B (ja) |
FR (1) | FR2974944B1 (ja) |
SG (1) | SG194748A1 (ja) |
WO (1) | WO2012150184A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10079170B2 (en) | 2014-01-23 | 2018-09-18 | Globalwafers Co., Ltd. | High resistivity SOI wafers and a method of manufacturing thereof |
WO2015195314A1 (en) * | 2014-06-19 | 2015-12-23 | Gtat Corporation | Enhancing the emissivity of a donor substrate for ion implantation |
FR3043248B1 (fr) * | 2015-10-30 | 2017-12-15 | Commissariat Energie Atomique | Procede d'elimination de defauts dans un film semiconducteur comprenant la formation d'une couche de piegeage d'hydrogene |
JP6632462B2 (ja) * | 2016-04-28 | 2020-01-22 | 信越化学工業株式会社 | 複合ウェーハの製造方法 |
FR3079658B1 (fr) * | 2018-03-28 | 2021-12-17 | Soitec Silicon On Insulator | Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques |
FR3091000B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Procede de fabrication d’un substrat pour un capteur d’image de type face avant |
FR3091619B1 (fr) | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de guérison avant transfert d’une couche semi-conductrice |
FR3091620B1 (fr) * | 2019-01-07 | 2021-01-29 | Commissariat Energie Atomique | Procédé de transfert de couche avec réduction localisée d’une capacité à initier une fracture |
FR3094573B1 (fr) * | 2019-03-29 | 2021-08-13 | Soitec Silicon On Insulator | Procede de preparation d’une couche mince de materiau ferroelectrique |
CN110341291B (zh) * | 2019-08-16 | 2021-04-06 | 江阴市合助机械科技有限公司 | 一种复合板材自动剥离方法 |
CN113311309B (zh) * | 2021-07-30 | 2021-10-12 | 度亘激光技术(苏州)有限公司 | 半导体结构的覆盖层剥除方法及半导体结构失效分析方法 |
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SE504916C2 (sv) | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
US6544862B1 (en) * | 2000-01-14 | 2003-04-08 | Silicon Genesis Corporation | Particle distribution method and resulting structure for a layer transfer process |
FR2847076B1 (fr) * | 2002-11-07 | 2005-02-18 | Soitec Silicon On Insulator | Procede de detachement d'une couche mince a temperature moderee apres co-implantation |
WO2005080645A2 (en) * | 2004-02-13 | 2005-09-01 | Apollo Diamond, Inc. | Diamond structure separation |
US7456080B2 (en) * | 2005-12-19 | 2008-11-25 | Corning Incorporated | Semiconductor on glass insulator made using improved ion implantation process |
FR2899378B1 (fr) | 2006-03-29 | 2008-06-27 | Commissariat Energie Atomique | Procede de detachement d'un film mince par fusion de precipites |
-
2011
- 2011-05-02 FR FR1153737A patent/FR2974944B1/fr not_active Expired - Fee Related
-
2012
- 2012-04-27 SG SG2013081252A patent/SG194748A1/en unknown
- 2012-04-27 JP JP2014508753A patent/JP6019106B2/ja active Active
- 2012-04-27 CN CN201280021785.XA patent/CN103534800B/zh active Active
- 2012-04-27 US US14/114,998 patent/US9105688B2/en active Active
- 2012-04-27 EP EP12723839.2A patent/EP2705529B1/fr active Active
- 2012-04-27 KR KR1020137031564A patent/KR101913174B1/ko active IP Right Grant
- 2012-04-27 WO PCT/EP2012/057713 patent/WO2012150184A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20140040725A (ko) | 2014-04-03 |
FR2974944A1 (fr) | 2012-11-09 |
EP2705529A1 (fr) | 2014-03-12 |
SG194748A1 (en) | 2013-12-30 |
CN103534800B (zh) | 2016-12-07 |
US9105688B2 (en) | 2015-08-11 |
US20140113434A1 (en) | 2014-04-24 |
WO2012150184A1 (fr) | 2012-11-08 |
CN103534800A (zh) | 2014-01-22 |
KR101913174B1 (ko) | 2018-10-30 |
JP2014518010A (ja) | 2014-07-24 |
EP2705529B1 (fr) | 2015-03-11 |
FR2974944B1 (fr) | 2013-06-14 |
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