FR3079658B1 - Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques - Google Patents

Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques Download PDF

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Publication number
FR3079658B1
FR3079658B1 FR1852683A FR1852683A FR3079658B1 FR 3079658 B1 FR3079658 B1 FR 3079658B1 FR 1852683 A FR1852683 A FR 1852683A FR 1852683 A FR1852683 A FR 1852683A FR 3079658 B1 FR3079658 B1 FR 3079658B1
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FR
France
Prior art keywords
substrate
fracture
heating chamber
detection
atomic species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1852683A
Other languages
English (en)
Other versions
FR3079658A1 (fr
Inventor
Francois Rieutord
Frederic Mazen
Didier Landru
Oleg Kononchuck
Mohamed Nadia Ben
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Soitec SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1852683A priority Critical patent/FR3079658B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Soitec SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to KR1020207031050A priority patent/KR102526747B1/ko
Priority to PCT/FR2019/050659 priority patent/WO2019186037A1/fr
Priority to US17/042,755 priority patent/US20210028036A1/en
Priority to JP2020551816A priority patent/JP7426551B2/ja
Priority to SG11202009544XA priority patent/SG11202009544XA/en
Priority to EP19718441.9A priority patent/EP3776639A1/fr
Priority to TW108110509A priority patent/TWI840349B/zh
Publication of FR3079658A1 publication Critical patent/FR3079658A1/fr
Application granted granted Critical
Publication of FR3079658B1 publication Critical patent/FR3079658B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
    • G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/269—Various geometry objects
    • G01N2291/2697—Wafer or (micro)electronic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

L'invention concerne un procédé de surveillance d'un traitement thermique appliqué à un substrat comprenant une zone de fragilisation formée par implantation d'espèces atomiques en vue de fracturer ledit substrat le long de ladite zone de fragilisation, le substrat (S) étant agencé dans une chambre de chauffage (11), caractérisé en ce qu'il comprend un enregistrement du son à l'intérieur ou au voisinage de la chambre de chauffage (11) et la détection, dans ledit enregistrement, d'un son émis par le substrat (S) lors de sa fracture. L'invention concerne également un dispositif pour le traitement thermique d'un lot de substrats, comprenant un four de recuit (1) comprenant une chambre de chauffage (11) destinée à recevoir ledit lot, au moins un microphone (3) configuré pour enregistrer les sons à l'intérieur ou au voisinage de la chambre de chauffage (11), et un système de traitement configuré pour détecter, à partir d'un enregistrement sonore produit par ledit microphone, un son émis par une fracture d'un substrat.
FR1852683A 2018-03-28 2018-03-28 Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques Active FR3079658B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1852683A FR3079658B1 (fr) 2018-03-28 2018-03-28 Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques
PCT/FR2019/050659 WO2019186037A1 (fr) 2018-03-28 2019-03-22 Procédé de détection de la fracture d'un substrat fragilise par implantation d'espèces atomiques
US17/042,755 US20210028036A1 (en) 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species
JP2020551816A JP7426551B2 (ja) 2018-03-28 2019-03-22 原子種の注入により弱化させた基板の分割を検出するための方法
KR1020207031050A KR102526747B1 (ko) 2018-03-28 2019-03-22 원자 종들을 임플란팅 함으로써 약해진 기판의 분할을 검출하기 위한 방법
SG11202009544XA SG11202009544XA (en) 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species
EP19718441.9A EP3776639A1 (fr) 2018-03-28 2019-03-22 Procédé de détection de la fracture d'un substrat fragilise par implantation d'espèces atomiques
TW108110509A TWI840349B (zh) 2018-03-28 2019-03-26 用以檢測藉植入原子物種而弱化之基體的分裂之方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852683 2018-03-28
FR1852683A FR3079658B1 (fr) 2018-03-28 2018-03-28 Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques

Publications (2)

Publication Number Publication Date
FR3079658A1 FR3079658A1 (fr) 2019-10-04
FR3079658B1 true FR3079658B1 (fr) 2021-12-17

Family

ID=62751062

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1852683A Active FR3079658B1 (fr) 2018-03-28 2018-03-28 Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques

Country Status (7)

Country Link
US (1) US20210028036A1 (fr)
EP (1) EP3776639A1 (fr)
JP (1) JP7426551B2 (fr)
KR (1) KR102526747B1 (fr)
FR (1) FR3079658B1 (fr)
SG (1) SG11202009544XA (fr)
WO (1) WO2019186037A1 (fr)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP4379943B2 (ja) * 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP3541359B2 (ja) * 2001-09-19 2004-07-07 独立行政法人 科学技術振興機構 超音波プローブの一部を内蔵した基板載置台及び超音波プローブ貫通孔の密閉装置
US7461535B2 (en) * 2006-03-01 2008-12-09 Memsic, Inc. Multi-temperature programming for accelerometer
FR2902926B1 (fr) * 2006-06-22 2008-10-24 Commissariat Energie Atomique Procede et dispositif de suivi d'un traitement thermique d'un substrat microtechnologique.
US9933394B2 (en) * 2007-03-10 2018-04-03 Sergei Ostapenko Method and apparatus for detecting cracks and delamination in composite materials
JP2009231697A (ja) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2009283582A (ja) 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd 貼り合わせウェーハの製造方法及び貼り合わせウェーハ
US7973547B2 (en) * 2008-08-13 2011-07-05 Infineon Technologies Ag Method and apparatus for detecting a crack in a semiconductor wafer, and a wafer chuck
US20110016975A1 (en) * 2009-07-24 2011-01-27 Gregory Scott Glaesemann Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation
FR2973157B1 (fr) * 2011-03-25 2014-03-14 Soitec Silicon On Insulator Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe
FR2974944B1 (fr) * 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
FR3020175B1 (fr) * 2014-04-16 2016-05-13 Soitec Silicon On Insulator Procede de transfert d'une couche utile

Also Published As

Publication number Publication date
KR102526747B1 (ko) 2023-04-27
EP3776639A1 (fr) 2021-02-17
WO2019186037A1 (fr) 2019-10-03
JP7426551B2 (ja) 2024-02-02
FR3079658A1 (fr) 2019-10-04
SG11202009544XA (en) 2020-10-29
TW201942999A (zh) 2019-11-01
US20210028036A1 (en) 2021-01-28
KR20200136981A (ko) 2020-12-08
JP2021519512A (ja) 2021-08-10

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