JP7426551B2 - 原子種の注入により弱化させた基板の分割を検出するための方法 - Google Patents
原子種の注入により弱化させた基板の分割を検出するための方法 Download PDFInfo
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Description
FR2902926
Claims (18)
- 弱化ゾーンを備えた基板に適用される熱処理をモニタリングするための方法であって、前記弱化ゾーンは前記基板を当該弱化ゾーンに沿って分割することを目的として原子種の注入により形成される方法において、
分割されるべき前記基板(S)のバッチは加熱チャンバ(11)に配置され、
前記加熱チャンバ(11)の内部または近傍において音を記録する工程と、
前記記録する工程において、前記弱化ゾーンに沿った分割中に各前記基板が発した音を検出する工程と、
を備え、
基板を伝播する分割波の速度が、音の強さのピークに対応する最大周波数から特定されることを特徴とする方法。 - 前記記録する工程は、前記加熱チャンバ(11)の内部に配置されたマイクロホン(3)を用いて実施される、
請求項1に記載の方法。 - 前記記録する工程は、前記加熱チャンバ(11)を収容する焼鈍炉(1)の外壁に配置されたマイクロホン(3)を用いて実施される、
請求項1に記載の方法。 - 前記記録する工程は、前記加熱チャンバ(11)へのアクセスを可能とする焼鈍炉(1)の熱遮蔽物(13)とドア(12)との間に配置されたマイクロホン(3)を用いて実施される、
請求項1に記載の方法。 - 前記記録する工程は、前記加熱チャンバ(11)の内部に開口する管(30)に配置されたマイクロホン(3)を用いて実施される、
請求項1に記載の方法。 - 前記加熱チャンバ(11)の内部または近傍における音の記録から、前記基板の破損を検出する工程を更に備える、
請求項1乃至5の一項に記載の方法。 - 互いに距離を置いて配置された2つのマイクロホン(3)によって、前記加熱チャンバ(11)の内部または近傍において音を記録する工程と、
前記マイクロホンそれぞれの記録において検出された、基板の分割の音同士の間の時間的推移に基づいて、分割が発生した基板のバッチ内での位置を特定する工程と、
を備える請求項1乃至6のいずれか一項に記載の方法。 - 前記マイクロホン(3)は、前記加熱チャンバ(11)の対向する領域に配置される、
請求項7に記載の方法。 - 各基板が分割したことが検出されると、前記熱処理は停止される、
請求項7または8の一項に記載の方法。 - 所定の時間後、分割したことが検出された基板の枚数が基板の枚数より少なくなり、分割した基板を手動で分離することを目的として前記バッチが搬出される、
請求項7または8の一項に記載の方法。 - 分割中の基板の振動周波数が、前記基板の分割により生成される音の最大周波数から特定され、前記基板の分割速度が、前記振動周波数から特定される、
請求項1乃至10の一項に記載の方法。 - 基板の分割中に放出されるエネルギーが、前記分割により生成される音の強さから特定される、
請求項1乃至11の一項に記載の方法。 - 各基板は、少なくとも1つの半導体材料を含む、
請求項1乃至12の一項に記載の方法。 - 弱化ゾーンをそれぞれが備えた基板のバッチを熱処理するための装置であって、前記弱化ゾーンは前記基板を当該弱化ゾーンに沿って分割することを目的として原子種の注入により形成される装置において、
前記バッチ全体を同時に受容するように構成された加熱チャンバ(11)を備えた焼鈍炉(1)と、
前記加熱チャンバの内部または近傍において音を記録するように構成された少なくとも1つのマイクロホン(3)と、
前記マイクロホンにより作成された音声の記録において、基板が前記弱化ゾーンに沿って分割したときに発した音を検出するように構成された処理システム(4)と、
を備え、
分割中の基板の振動周波数が、前記基板の分割により生成される音の最大周波数から特定され、前記基板の分割速度が、前記振動周波数から特定されるように構成されている装置。 - 前記マイクロホン(3)は、前記加熱チャンバ(11)の内部に開口する管(30)に配置される、
請求項14に記載の装置。 - 互いに距離を置いて配置された少なくとも2つのマイクロホン(3)を備える、
請求項14または15に記載の装置。 - 前記処理システム(4)は、前記マイクロホンそれぞれの記録において検出された、基板の分割の音同士の間の時間的推移に基づいて、分割が発生した基板のバッチ内での位置を特定するように構成される、
請求項16に記載の装置。 - 前記炉を制御するためのシステムであって、バッチの全ての基板が分割したことが検出されると、前記熱処理を停止するように構成されたシステムを更に備える、
請求項14乃至17の一項に記載の装置。
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FR1852683A FR3079658B1 (fr) | 2018-03-28 | 2018-03-28 | Procede de detection de la fracture d'un substrat fragilise par implantation d'especes atomiques |
FR1852683 | 2018-03-28 | ||
PCT/FR2019/050659 WO2019186037A1 (fr) | 2018-03-28 | 2019-03-22 | Procédé de détection de la fracture d'un substrat fragilise par implantation d'espèces atomiques |
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JP2021519512A JP2021519512A (ja) | 2021-08-10 |
JP7426551B2 true JP7426551B2 (ja) | 2024-02-02 |
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US (1) | US20210028036A1 (ja) |
EP (1) | EP3776639A1 (ja) |
JP (1) | JP7426551B2 (ja) |
KR (1) | KR102526747B1 (ja) |
FR (1) | FR3079658B1 (ja) |
SG (1) | SG11202009544XA (ja) |
WO (1) | WO2019186037A1 (ja) |
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JP2000294754A (ja) | 1999-04-07 | 2000-10-20 | Denso Corp | 半導体基板及び半導体基板の製造方法並びに半導体基板製造装置 |
JP2009283582A (ja) | 2008-05-21 | 2009-12-03 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法及び貼り合わせウェーハ |
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FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP3541359B2 (ja) * | 2001-09-19 | 2004-07-07 | 独立行政法人 科学技術振興機構 | 超音波プローブの一部を内蔵した基板載置台及び超音波プローブ貫通孔の密閉装置 |
US7461535B2 (en) * | 2006-03-01 | 2008-12-09 | Memsic, Inc. | Multi-temperature programming for accelerometer |
FR2902926B1 (fr) * | 2006-06-22 | 2008-10-24 | Commissariat Energie Atomique | Procede et dispositif de suivi d'un traitement thermique d'un substrat microtechnologique. |
US9933394B2 (en) * | 2007-03-10 | 2018-04-03 | Sergei Ostapenko | Method and apparatus for detecting cracks and delamination in composite materials |
JP2009231697A (ja) * | 2008-03-25 | 2009-10-08 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
US7973547B2 (en) * | 2008-08-13 | 2011-07-05 | Infineon Technologies Ag | Method and apparatus for detecting a crack in a semiconductor wafer, and a wafer chuck |
US20110016975A1 (en) * | 2009-07-24 | 2011-01-27 | Gregory Scott Glaesemann | Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation |
FR2973157B1 (fr) * | 2011-03-25 | 2014-03-14 | Soitec Silicon On Insulator | Procédé de réalisation d'ilots de matériau contraint au moins partiellement relaxe |
FR2974944B1 (fr) * | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
FR3020175B1 (fr) * | 2014-04-16 | 2016-05-13 | Soitec Silicon On Insulator | Procede de transfert d'une couche utile |
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- 2019-03-22 EP EP19718441.9A patent/EP3776639A1/fr active Pending
- 2019-03-22 JP JP2020551816A patent/JP7426551B2/ja active Active
- 2019-03-22 US US17/042,755 patent/US20210028036A1/en active Pending
- 2019-03-22 WO PCT/FR2019/050659 patent/WO2019186037A1/fr unknown
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JP2000294754A (ja) | 1999-04-07 | 2000-10-20 | Denso Corp | 半導体基板及び半導体基板の製造方法並びに半導体基板製造装置 |
JP2009283582A (ja) | 2008-05-21 | 2009-12-03 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法及び貼り合わせウェーハ |
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FR3079658A1 (fr) | 2019-10-04 |
FR3079658B1 (fr) | 2021-12-17 |
JP2021519512A (ja) | 2021-08-10 |
EP3776639A1 (fr) | 2021-02-17 |
KR102526747B1 (ko) | 2023-04-27 |
SG11202009544XA (en) | 2020-10-29 |
US20210028036A1 (en) | 2021-01-28 |
KR20200136981A (ko) | 2020-12-08 |
TW201942999A (zh) | 2019-11-01 |
WO2019186037A1 (fr) | 2019-10-03 |
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