SG11202009544XA - Method for detecting the splitting of a substrate weakened by implanting atomic species - Google Patents

Method for detecting the splitting of a substrate weakened by implanting atomic species

Info

Publication number
SG11202009544XA
SG11202009544XA SG11202009544XA SG11202009544XA SG11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA SG 11202009544X A SG11202009544X A SG 11202009544XA
Authority
SG
Singapore
Prior art keywords
splitting
detecting
atomic species
implanting atomic
weakened
Prior art date
Application number
SG11202009544XA
Inventor
François Rieutord
Frédéric Mazen
Didier Landru
Oleg Kononchuck
Mohamed Nadia Ben
Original Assignee
Soitec Silicon On Insulator
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator, Commissariat Energie Atomique filed Critical Soitec Silicon On Insulator
Publication of SG11202009544XA publication Critical patent/SG11202009544XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
    • G01N29/46—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by spectral analysis, e.g. Fourier analysis or wavelet analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00—Indexing codes associated with group G01N29/00
    • G01N2291/26—Scanned objects
    • G01N2291/269—Various geometry objects
    • G01N2291/2697—Wafer or (micro)electronic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
SG11202009544XA 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species SG11202009544XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852683A FR3079658B1 (en) 2018-03-28 2018-03-28 METHOD OF DETECTION OF THE FRACTURE OF A FRAGILIZED SUBSTRATE BY IMPLANTATION OF ATOMIC SPECIES
PCT/FR2019/050659 WO2019186037A1 (en) 2018-03-28 2019-03-22 Method for detecting the fracture of a substrate weakened by implantation of atomic species

Publications (1)

Publication Number Publication Date
SG11202009544XA true SG11202009544XA (en) 2020-10-29

Family

ID=62751062

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009544XA SG11202009544XA (en) 2018-03-28 2019-03-22 Method for detecting the splitting of a substrate weakened by implanting atomic species

Country Status (7)

Country Link
US (1) US20210028036A1 (en)
EP (1) EP3776639A1 (en)
JP (1) JP7426551B2 (en)
KR (1) KR102526747B1 (en)
FR (1) FR3079658B1 (en)
SG (1) SG11202009544XA (en)
WO (1) WO2019186037A1 (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (en) * 1991-09-18 1993-10-29 Commissariat Energie Atomique PROCESS FOR PRODUCING THIN FILMS OF SEMICONDUCTOR MATERIAL.
JP4379943B2 (en) * 1999-04-07 2009-12-09 株式会社デンソー Semiconductor substrate manufacturing method and semiconductor substrate manufacturing apparatus
JP3541359B2 (en) * 2001-09-19 2004-07-07 独立行政法人 科学技術振興機構 Substrate mounting table incorporating part of ultrasonic probe and sealing device for ultrasonic probe through hole
US7461535B2 (en) * 2006-03-01 2008-12-09 Memsic, Inc. Multi-temperature programming for accelerometer
FR2902926B1 (en) * 2006-06-22 2008-10-24 Commissariat Energie Atomique METHOD AND DEVICE FOR MONITORING THERMAL PROCESSING OF A MICROTECHNOLOGICAL SUBSTRATE
US9933394B2 (en) * 2007-03-10 2018-04-03 Sergei Ostapenko Method and apparatus for detecting cracks and delamination in composite materials
JP2009231697A (en) * 2008-03-25 2009-10-08 Dainippon Screen Mfg Co Ltd Heat treatment equipment
JP2009283582A (en) * 2008-05-21 2009-12-03 Shin Etsu Handotai Co Ltd Bonded wafer manufacturing method and bonded wafer
US7973547B2 (en) * 2008-08-13 2011-07-05 Infineon Technologies Ag Method and apparatus for detecting a crack in a semiconductor wafer, and a wafer chuck
US20110016975A1 (en) * 2009-07-24 2011-01-27 Gregory Scott Glaesemann Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation
FR2973157B1 (en) * 2011-03-25 2014-03-14 Soitec Silicon On Insulator METHOD FOR PRODUCING ISOLATES OF AT LEAST PARTIALLY RELAXED STRAINED MATERIAL
FR2974944B1 (en) * 2011-05-02 2013-06-14 Commissariat Energie Atomique METHOD OF FORMING A FRACTURE IN A MATERIAL
FR3020175B1 (en) * 2014-04-16 2016-05-13 Soitec Silicon On Insulator METHOD OF TRANSFERRING A USEFUL LAYER

Also Published As

Publication number Publication date
US20210028036A1 (en) 2021-01-28
JP7426551B2 (en) 2024-02-02
EP3776639A1 (en) 2021-02-17
KR20200136981A (en) 2020-12-08
KR102526747B1 (en) 2023-04-27
FR3079658B1 (en) 2021-12-17
FR3079658A1 (en) 2019-10-04
WO2019186037A1 (en) 2019-10-03
TW201942999A (en) 2019-11-01
JP2021519512A (en) 2021-08-10

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